A self-assembled hole-selective material based on acridine, preparation method thereof, and use thereof

Abstract

The present invention belongs to the field of perovskites and organic solar cells, and discloses an acridine-based self-assembled hole-selective material having a structure of formula I: #imgabs0#X and Y are each independently selected from hydrogen, alkyl, amino, nitro, alkoxy, and halogen; L is selected from (C2-C18) alkyl, phenyl, naphthyl, anthracenyl, thienyl, benzothienyl, dithienothiophene, dithienothiopyrrole, carbazolyl, and fluorenyl; and A is selected from one of the following groups: #imgabs1# The self-assembled hole-selective material of the present invention has the advantages of high energy level matching, suitable steric hindrance effect, and suitable connecting group length that is conducive to regulating film morphology. It can simultaneously passivate surface defects of a nickel oxide hole transport layer, induce perovskite crystal growth, and reduce energy loss caused by interfacial charge recombination. The self-assembled hole-selective material is applied to an inverted perovskite solar cell device to obtain a solar cell with higher photovoltaic performance and high efficiency and stability.

Description

Technical Field

[0001] The present invention belongs to the field of perovskite and organic solar cells, and in particular relates to an acridine-based self-assembled hole-selective material, a preparation method thereof, and uses thereof. Background Art

[0002] With the increasing depletion of fossil energy and the growing severity of environmental pollution, renewable energy will account for an increasingly significant share of future energy demand. Solar energy is an inexhaustible and important renewable energy source. Solar cells, based on the photovoltaic effect, can directly convert solar energy into the electricity needed for modern society, and have garnered widespread attention from both academia and industry. Currently, among various photovoltaic technologies, perovskite solar cells have seen particularly remarkable development, with single-cell devices achieving a photoelectric conversion efficiency of 25.7%, making them the most promising photovoltaic technology. In perovskite solar cells, charge recombination losses caused by surface defects in the perovskite active layer are a significant factor affecting device performance. Researchers have developed a series of interface modification and passivation materials to address this issue. For example, organic halide ammonium salts (PEAI) applied to the top perovskite interface can induce the formation of a 2D perovskite passivation layer, improving device performance and stability. However, it is difficult to modify and passivate defects at the bottom perovskite interface after the crystallization process. Therefore, the development of multifunctional interface materials that can induce perovskite crystallization, passivate defects, and enhance interface carrier extraction is of great significance.

[0003] Self-assembled hole-selective materials have emerged as a result. These materials utilize anchoring groups within their molecules to react with the ITO substrate, forming a molecularly modified layer with self-assembling properties. These modified layers have a positive impact on passivating defects on the ITO surface and the inorganic hole transport layer of nickel oxide, enhancing interfacial hole extraction efficiency, reducing interfacial carrier recombination, and inducing perovskite crystal growth, making them a promising alternative to traditional organic and inorganic hole transport materials.

[0004] The disadvantage of existing technologies is that their molecular systems are relatively simple. The functional groups of self-assembled hole-selective contact molecules are mainly carbazole, with recent developments towards functional groups such as phenoxazine and phenothiazine. However, these molecules have strong intermolecular stacking interactions, and the intermolecular π-π interactions during spin coating are not conducive to forming well-dispersed, highly uniform functional films. Therefore, it is necessary to develop new self-assembled hole-selective materials. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to overcome the shortcomings of existing interface modification materials and provide an interface modification material with hole selective contact characteristics, which can simultaneously achieve the functions of passivating ITO or nickel oxide surface defects, inducing perovskite film growth, and enhancing interface hole extraction.

[0006] The object of the present invention is to provide a self-assembled hole-selective material based on acridine.

[0007] Another object of the present invention is to provide a method for synthesizing and preparing the self-assembled hole-selective material.

[0008] Another object of the present invention is to provide a perovskite solar cell based on acridine self-assembled hole-selective material.

[0009] In order to achieve one of the above purposes, the present invention adopts the following technical solutions:

[0010] An acridine-based self-assembled hole-selective material having a structure of Formula I:

[0011]

[0012] X and Y are functional substituents, each independently selected from hydrogen, alkyl, amino, nitro, alkoxy, and halogen;

[0013] L is a linking unit selected from (C2-C18) alkyl, phenyl, naphthyl, anthracenyl, thienyl, dithienyl, dithienothiophene, dithienothiopyrrole, carbazolyl, and fluorenyl;

[0014] A is an anchoring group selected from one of the following groups:

[0015]

[0016] Furthermore, X and Y are each independently selected from hydrogen, (C1-C4) alkyl, chlorine, bromine, and iodine; and L is (C2-C18) alkyl.

[0017] Furthermore, X and Y are each independently selected from hydrogen, methyl, chlorine, and bromine; L is -(CH2) n -, n is 3 to 5; said A is

[0018] Furthermore, the L is -(CH2)4-.

[0019] Furthermore, the acridine-based self-assembled hole selection material is one of the following structures:

[0020]

[0021] A method for preparing acridine-based self-assembled hole selection material comprises the following steps:

[0022] Compound S1 reacts with a brominated linker unit to give intermediate S2;

[0023] Intermediate S2 reacts with triethyl phosphite or carboxylic acid ester to obtain an esterified intermediate, which is hydrolyzed to obtain a product;

[0024]

[0025] wherein X, Y, L, and A are as defined above.

[0026] Taking a compound in which X and Y are halogens and A is phosphoric acid as an example, the synthesis method is as follows:

[0027] 9,9-dimethylacridine is reacted with a halogenating agent in an organic solvent to prepare a halogenated acridine intermediate; the organic solvent is commonly used in the art, such as dichloromethane, tetrahydrofuran, 1,4-dioxane, chloroform, N,N-dimethylformamide, chlorobenzene, toluene, ethyl acetate, n-hexane, etc.; the halogenating agent is N-chlorosuccinimide, N-bromosuccinimide, N-iodosuccinimide, or bromine.

[0028] The halogenated acridine intermediate reacts with the corresponding dibrominated linking unit under the action of potassium hydroxide to undergo an N-alkyl substitution reaction to obtain a terminal halogenated product; the dibrominated linking unit is a C2 to C10 straight-chain terminal bromoalkane, dibromobenzene, dibromonaphthalene, dibromoanthracene, dibromothiophene, dibromothiophene, dibromoterthiophene, dibromocarbazole, dibromofluorene, and dibromodithienopyrrole.

[0029] The terminal halogenated product and triethyl phosphite are reacted at high temperature to prepare phosphate ester, which is then hydrolyzed with trimethylsilyl bromide, methanol and water, and recrystallized to obtain the target product. The phosphate ester preparation temperature is 100° C. to 180° C. The recrystallization solvent is a mixture of one or more of tetrahydrofuran, n-hexane, acetone, dichloromethane, ethyl acetate and methanol.

[0030] Taking a compound in which X and Y are halogens and A is phosphoric acid as an example, the synthesis method is as follows:

[0031]

[0032] Dissolve 9,9-dimethylacridine in dichloromethane, add the corresponding halogenating reagent, stir at room temperature, wash with water, dry, and then remove the organic solvent by rotary evaporation. The crude product is purified by column chromatography to obtain the halogenated intermediate;

[0033] Dissolve the halogenated intermediate, tetrabutylammonium bromide and potassium hydroxide in the corresponding bromoalkane, heat to 50°C, and stir to react. After the reaction is complete, remove the excess bromoalkane by distillation under reduced pressure. Dissolve the crude product in dichloromethane, wash with water, dry, concentrate, and purify by column chromatography to obtain the alkylated intermediate.

[0034] Under the protection of inert gas, the alkylation intermediate and excess triethyl phosphite were mixed, and the temperature was raised to 160°C, and the reaction was stirred. After the reaction was completed, the excess triethyl phosphite was removed by distillation under reduced pressure to obtain a crude product. 1,4-dioxane was added to dissolve the crude product. After trimethylsilyl bromide was added dropwise, the reaction was stirred at room temperature, and then appropriate amounts of methanol and water were added in sequence until the reaction solution became turbid. The reaction was continued by stirring at room temperature, and the crude product was filtered and recrystallized to obtain a white final product.

[0035] Acridine-based self-assembled hole-selective materials can be used to prepare perovskite solar cells. The structure of the perovskite solar cell includes ITO glass, a hole transport layer, a self-assembled hole-selective contact layer, a light absorption layer, an electron transport layer, a hole blocking layer and an electrode layer. The self-assembled hole-selective contact layer is composed of the above-mentioned acridine-based self-assembled hole-selective material.

[0036] Furthermore, the hole transport layer is an inorganic hole transport layer of nickel oxide.

[0037] Furthermore, the light absorbing layer is ternary cation perovskite CsFAMA.

[0038] Furthermore, the electron transport layer is PC61BM, PC71BM or C60.

[0039] Furthermore, the hole blocking layer is bathocuproin BCP.

[0040] Furthermore, the electrode layer is a silver electrode.

[0041] As used herein, "alkyl" refers to a saturated aliphatic hydrocarbon group, which is a straight or branched chain group containing 1 to 20 carbon atoms, preferably an alkyl group containing 1 to 12 carbon atoms, and more preferably an alkyl group containing 1 to 6 carbon atoms. Examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, pentyl, 2-pentyl, isopentyl, neopentyl, hexyl, 2-hexyl, 3-hexyl, and 3-methylpentyl.

[0042] As used herein, "alkoxy" refers to -O-(alkyl), wherein alkyl is as defined herein, and non-limiting examples of alkoxy include methoxy, ethoxy, propoxy, isopropoxy, n-butoxy, sec-butoxy, tert-butoxy, pentoxy, 2-pentoxy, isopentoxy, neopentoxy, hexoxy, 2-hexoxy, 3-hexoxy, and 3-methylpentoxy. Alkoxy groups typically have from 1 to 7 carbon atoms attached through an oxygen bridge.

[0043] As used herein, "halogen" refers to fluorine, chlorine, bromine and iodine.

[0044] As used herein, "amino" refers to -NH2.

[0045] As used herein, "nitro" refers to -NO2.

[0046] As used herein, "phenyl" refers to

[0047] As used herein, "naphthyl" refers to

[0048] As used herein, "anthracenyl" refers to

[0049] As used herein, "thienyl" refers to

[0050] As used herein, "thienyl" refers to

[0051] As used herein, "dithienothiphenyl" refers to

[0052] As used herein, "dithienopyrrolyl" refers to

[0053] As used herein, "carbazolyl" refers to

[0054] As used herein, "fluorenyl" refers to

[0055] The present invention has the following beneficial effects:

[0056] The present invention uses acridine as a functional group to provide a series of novel self-assembled hole-selective materials. These materials have the advantages of high energy level matching, suitable steric hindrance effect, and suitable linker group length that is conducive to regulating film morphology. They can simultaneously passivate surface defects of the nickel oxide hole transport layer, induce perovskite crystal growth, and reduce energy loss caused by interfacial charge recombination. They are applied to inverted perovskite solar cell devices to obtain solar cells with higher photovoltaic performance, high efficiency and stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Figure 1 This is the UV-visible absorption spectrum of the self-assembled hole selection material 2BrDMAcPA in THF of Example 1;

[0058] Figure 2 This is the cyclic voltammetry curve of the self-assembled hole selection material 2BrDMAcPA in Example 1;

[0059] Figure 3 This is the thermal gravimetric curve of the self-assembled hole selection material 2BrDMAcPA in Example 1, taking a 5% weight loss standard and a thermal decomposition temperature of 214°C;

[0060] Figure 4This is a schematic diagram of the structure of a perovskite solar cell according to Example 2;

[0061] Figure 5 This is the current-voltage characteristic curve of the perovskite solar cell of Example 2. DETAILED DESCRIPTION

[0062] The present invention is further described below with reference to the accompanying drawings and specific examples. Unless otherwise specified, the reagents, methods and equipment used in the present invention are conventional reagents, methods and equipment in the art.

[0063] Example 1

[0064] Synthesis of hole-selective material 2BrDMAcPA

[0065] The specific synthesis steps are as follows:

[0066] 1. Synthesis of Compound 2

[0067]

[0068] To a 50 mL round-bottom flask, add 9,9-dimethylacridine (2.09 g, 10 mmol) and tetrahydrofuran (20 mL) sequentially and cool to 0°C. Dissolve N-bromosuccinimide (3.74 g, 21 mmol) in N,N-dimethylformamide (20 mL) and add dropwise to the substrate solution. Stir at room temperature until the starting material is consumed. Remove the tetrahydrofuran by rotary evaporation, add water to precipitate the solid, and filter to obtain the crude product cake. Further purification by column chromatography yields 2.47 g of a light yellow solid powder in a 67.3% yield. 1 H NMR (400MHz, DMSO-d6) δ9.17 (s, 1H), 7.45 (d, J = 2.3Hz, 2H), 7.21 (dd, J = 8.5, 2.2Hz, 2H), 6.73 (d, J = 8.5Hz, 2H), 1.46 (s, 6H).

[0069] 2. Synthesis of compound 3

[0070]

[0071] To a 50 mL round-bottom flask, intermediate 2 (1.0 g, 2.72 mmol), 11,4-dibromobutane (10 mL), tetrabutylammonium bromide (90 mg, 0.27 mmol), and 50 wt% aqueous potassium hydroxide solution (5 mL) were added. The mixture was heated to 65°C under inert gas and stirred for 12 hours. After the reaction, the mixture was extracted with dichloromethane, dried, concentrated, and purified by column chromatography to obtain 1.37 g of a clear viscous liquid in a 100% yield. 1H NMR(400MHz,Chloroform-d)δ7.48(d,J=2.3Hz,2H),7.32(dd,J=8.7,2.3Hz,2H),6.82(d ,J=8.8Hz,2H),3.97–3.83(m,2H),3.48(t,J=6.1Hz,2H),2.14–1.90(m,4H),1.50(s,6H).

[0072] 3. Synthesis of compound 2BrDMAcPA

[0073]

[0074] Intermediate 3 (1.37 g, 2.72 mmol) was dissolved in 15 mL of triethyl phosphite, heated to 160° C. under inert gas protection, and stirred for 24 hours. After the reaction, the excess triethyl phosphite was removed by distillation under reduced pressure, and then anhydrous 1,4-dioxane (15 mL) was added. Trimethylsilyl bromide (8.33 g, 54.4 mmol) was added under nitrogen protection and stirred at room temperature for 12 hours. Methanol (5 mL) was then added, and after stirring for 3 hours, deionized water was added dropwise until the reaction solution became turbid. Stirring at room temperature for another 12 hours, the reaction was completed. The filter cake was filtered, washed with water, dried, and recrystallized from tetrahydrofuran and n-hexane to obtain 1.0 g of a white solid product with a yield of 73%. 1 H NMR (400MHz, DMSO-d6) δ7.48(d,J=2.4Hz,2H),7.33(dd,J=8.8,2.3Hz,2H),7.03(d,J=8.9Hz, 2H), 3.89 (t, J=7.6Hz, 2H), 1.74 (td, J=9.7, 7.2, 3.1Hz, 2H), 1.66–1.54 (m, 4H), 1.42 (s, 6H). 13 C NMR (101MHz, DMSO) δ139.44,134.00,129.99,127.53,115.56,112.76,45.33,36.59,29.06,28.28,26.92,26.53,26.38,20.79,20.74. 31 P NMR (162 MHz, DMSO) δ 26.42.

[0075] The UV-visible absorption, electrochemical and thermal stability of the synthesized hole-selective material 2BrDMAcPA were characterized and tested. Figure 1 、 Figure 2 、 Figure 3 As shown, the basic physical properties of the material are confirmed.

[0076] Example 2

[0077] Perovskite solar cells, whose structure is as Figure 4 As shown, from bottom to top are ITO glass, nickel oxide inorganic hole transport layer, self-assembled hole selection contact layer, light absorption layer ternary cation perovskite CsFAMA, electron transport layer PCBM, hole blocking layer BCP and silver electrode.

[0078] Perovskite solar cells are prepared according to the following steps:

[0079] 1. Ultrasonic clean the ITO glass with detergent, deionized water, acetone and isopropyl alcohol for 30 minutes in sequence, and treat with ozone for 30 minutes;

[0080] 2. Spin-coat nickel oxide colloidal solution and anneal at 110°C for 10 minutes, then spin-coat 2BrDMAcPA solution and anneal at 100°C for 10 minutes to form a hole-selective contact layer;

[0081] 3. Preparation of perovskite light absorption layer: Cesium iodide (12 mg), methylamine hydrobromide (4.5 mg), methylamine hydroiodide (23.85 mg), formamidine hydroiodide (146.2 mg), lead chloride (11 mg), lead iodide (484 mg) were weighed respectively, and then N, N-dimethylformamide (560 uL) and dimethyl sulfoxide (155 uL) were added. CsFAMA perovskite film was prepared by spin coating. The spin coating parameters were 1000 rpm, 10 s / 5000 rpm, 25 s. In the last 20 s, 300 μL of chlorobenzene antisolvent was added dropwise, and then annealed at 100 ° C for 60 minutes;

[0082] 4. Spin-coat PCBM solution and anneal at 100°C for 10 minutes to prepare the electron transport layer;

[0083] 5. Vacuum evaporation of 8nm bath cuproline (BCP) and 100nm silver electrode.

[0084] The following carbazole-based self-assembled hole-selective material (2BrCzPA) was used to prepare perovskite solar cells according to the above steps for comparison.

[0085]

[0086] The performance of the perovskite solar cell prepared above was tested, and the results were as follows: Figure 5 As shown, the short-circuit current Jsc is 25.69 mA cm -2 , the open circuit voltage Voc is 1.19V, the fill factor FF is 84.61%, and the photoelectric conversion efficiency PCE is 25.80%. The carbazole-based 2BrCzPA is applied to perovskite solar cells, and the short circuit current Jsc is 11.43mA cm -2The open circuit voltage Voc is 1.10V, the fill factor FF is 33.77%, and the photoelectric conversion efficiency PCE is only 4.24%, which is far lower than the perovskite cell device with 2BrDMAcPA as the hole selective contact.

[0087] Example 3

[0088] Synthesis and device applications of hole-selective material DMAcPA

[0089] In a 50 mL round-bottom flask, the substrate 9,9-dimethylacridine (0.57 g, 2.72 mmol), 1,4-dibromobutane (10 mL), tetrabutylammonium bromide (90 mg, 0.27 mmol), and 50 wt% aqueous potassium hydroxide solution (5 mL) were added. The mixture was heated to 65°C under inert gas protection and stirred for 12 hours. After the reaction, the mixture was extracted with dichloromethane, dried, concentrated, and purified by column chromatography to obtain 0.94 g of 10-(4-bromobutyl)-9,9-dimethylacridine with a yield of 100%. The phosphation reaction and hydrolysis reaction were carried out according to the corresponding steps of Example 1, and the hole-selective material DMAcPA was finally obtained.

[0090] 1 H NMR (400MHz, DMSO-d6) δ7.38(dd,J=7.7,1.5Hz,2H),7.17(ddd,J=8.5,7.2,1.6Hz,2H),7.04(dd,J=8.3,1.2H z,2H),6.91(td,J=7.4,1.1Hz,2H),3.97–3.84(m,2H),1.80(t,J=7.5Hz,2H),1.69–1.54(m,4H),1.43(s,6H). 13 C NMR (101MHz, DMSO) δ140.49,131.92,127.19,124.79,120.63,113.06,45.13,36.18,29.39,28.37,27.02,26.87,26.72,20.89.

[0091] Referring to Example 2, DMAcPA was applied to inverse perovskite solar cells. Due to the improved energy level of the compound, the device performance was slightly inferior to that of 2BrDMAcPA. The optimized device achieved a photoelectric conversion efficiency of 22.58%, an open circuit voltage of 1.15 V, and a short circuit current of 23.94 mA cm -2 , the fill factor is 82%.

[0092] Example 4

[0093] Synthesis and device applications of the hole-selective material 2MeDMAcPA

[0094] In a 50 mL round-bottom flask, the substrate 2,7,9,9-tetramethylacridine (0.65 g, 2.72 mmol), 1,4-dibromobutane (10 mL), tetrabutylammonium bromide (90 mg, 0.27 mmol), and 50 wt% potassium hydroxide aqueous solution (5 mL) were added. The mixture was heated to 65°C under inert gas protection and stirred for 12 hours. After the reaction, the mixture was extracted with dichloromethane, dried, concentrated, and purified by column chromatography to obtain 1.00 g of 10-(4-bromobutyl)-2,7,9,9-tetramethylacridine with a yield of 100%. The phosphation reaction and hydrolysis reaction were carried out according to the corresponding steps of Example 1, and the hole-selective material 2MeDMAcPA was finally obtained.

[0095] 1 H NMR (400MHz, DMSO-d6) δ7.46(d,J=2.3Hz,2H),7.30(dd,J=8.6,2.2Hz,2H),7.05(d,J=8.9Hz,2H),3. 92(t,J=7.4Hz,2H),2.32(s,6H),1.76(td,J=9.5,7.02,3.0Hz,2H),1.67–1.50(m,4H),1.45(s,6H). 13 C NMR (101MHz, DMSO) δ139.40,134.02,129.89,127.55,115.52,112.75,45.33,36.59,29.02,28.24,26.94,26.55,26.33,20.76,20.77,19.82.

[0096] Referring to Example 2, 2MeDMAcPA was applied to an inverse perovskite solar cell. Due to the electron-donating effect of the methyl group, the frontier orbital energy level of the material was further improved, which significantly affected the open-circuit voltage of the device. The optimized device achieved a photoelectric conversion efficiency of 21.66%, an open-circuit voltage of 1.09 V, and a short-circuit current of 24.35 mA cm -2 , the filling factor is 81.6%.

[0097] Example 5

[0098] Synthesis and device applications of hole-selective material 2ClDMAcPA

[0099] To a 50 mL round-bottom flask, add 9,9-dimethylacridine (2.09 g, 10 mmol) and dichloromethane (20 mL) sequentially and cool to 0°C. Dissolve N-chlorosuccinimide (2.80 g, 21 mmol) in dichloromethane (20 mL) and add dropwise to the substrate solution. Stir at room temperature until the starting material is consumed. Remove the organic solvent by rotary evaporation to obtain the crude product, which is further purified by column chromatography to obtain 1.66 g of 2,7-dichloro-9,9-dimethylacridine as a white solid powder, with a yield of 60%.

[0100] 2,7-dichloro-9,9-dimethylacridine (0.76 g, 2.72 mmol), 1,4-dibromobutane (10 mL), tetrabutylammonium bromide (90 mg, 0.27 mmol), and 50 wt% aqueous potassium hydroxide solution (5 mL) were added to a 50 mL round-bottom flask. The temperature was raised to 65 ° C under inert gas protection and stirred for 12 hours. After the reaction, the product was extracted with dichloromethane, dried, concentrated, and purified by column chromatography to obtain 10-(4-bromobutyl)-2,7-dichloro-9,9-dimethylacridine 1.12 g with a yield of 100%. The phosphation reaction and hydrolysis reaction were carried out according to the corresponding steps of Example 1, and the hole-selective material 2ClDMAcPA was finally obtained.

[0101] 1 H NMR (400MHz, DMSO-d6) δ7.44(d,J=2.4Hz,2H),7.30(dd,J=8.8,2.3Hz,2H),7.05(d,J=8.9Hz, 2H), 3.91 (t, J=7.6Hz, 2H), 1.76 (td, J=9.7, 7.2, 3.1Hz, 2H), 1.66–1.56 (m, 4H), 1.40 (s, 6H). 13 C NMR (101MHz, DMSO) δ139.47,134.05,129.93,127.58,115.62,112.81,45.37,36.65,29.08,28.30,26.95,26.56,26.41,20.83,20.79.

[0102] Referring to Example 2, 2ClDMAcPA was applied to an inverse perovskite solar cell. The substitution of chlorine atoms effectively lowered the HOMO energy level of the material, achieving an effect similar to that of 2BrDMAcPA. The optimized device achieved a photoelectric conversion efficiency of 24.78%, an open circuit voltage of 1.18 V, and a short circuit current of 25.09 mA cm -2 , the filling factor is 83.7%.

[0103] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. An acridine-based self-assembled hole-selective material having a structure of Formula I: ; The X and Y are each independently selected from hydrogen, methyl, chlorine, and bromine; the L is -(CH2) n -, n is 3 to 5; said A is .

2. The acridine-based self-assembled hole-selective material according to claim 1, wherein: It is one of the following structures: 。 3. The method for preparing the acridine-based self-assembled hole-selective material according to claim 1 or 2, characterized in that: The following steps are involved: Compound S1 reacts with a brominated linker unit to give intermediate S2; Intermediate S2 reacts with triethyl phosphite to obtain an esterification intermediate, and the esterification intermediate is hydrolyzed to obtain a product; ; wherein X, Y, L, and A are as defined in claim 1 or 2.

4. Use of the acridine-based self-assembled hole-selective material according to claim 1 or 2 in the preparation of perovskite solar cells.

5. A perovskite solar cell comprising ITO glass, a hole transport layer, a self-assembled hole selective contact layer, a light absorption layer, an electron transport layer, a hole blocking layer and an electrode layer, characterized in that: The self-assembled hole-selective contact layer is composed of the acridine-based self-assembled hole-selective material according to claim 1 or 2.

6. The perovskite solar cell according to claim 5, characterized in that The hole transport layer is a nickel oxide inorganic hole transport layer, the light absorption layer is a ternary cationic perovskite CsFAMA, the electron transport layer is PC61BM, PC71BM or C60, the hole blocking layer is bathocuproin BCP, and the electrode layer is a silver electrode.

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