An integrated power semiconductor device

Abstract

The application discloses an integrated power semiconductor device, comprising: a power unit provided with a backing plate chip; a control unit provided with a control circuit board; an interconnection unit provided with an insulating shell, a direct current positive copper bar, a direct current negative copper bar, a signal terminal and an alternating current copper bar; the direct current positive copper bar and the direct current negative copper bar are arranged in a stacked manner and extend to a direct current side to form a quick plug-in interface. The integrated power semiconductor device provided by the application realizes the function of a current conversion module at the device packaging level, realizes the quick plug-in electrical direct connection between the direct current external interface and the backing plate chip with low inductance, simplifies materials, improves transmission efficiency and reliability, ensures the copper bar area and the stacking area of the direct current positive copper bar and the direct current negative copper bar, can effectively improve the current carrying capacity, low inductance performance, and effectively improve the power density and application convenience. The main circuit and the signal circuit are integrated, the connection process is simplified, and the production efficiency and the yield are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to an integrated power semiconductor device. Background Technology

[0002] In high-voltage, high-power applications such as rail transit, industrial frequency conversion, and power grids, conventional power semiconductor devices only encapsulate a single semiconductor switch, offering limited functionality. Applications require multiple devices mounted on a heatsink, along with control circuit boards, busbars, wiring harnesses, connectors, and various structural components, undergoing complex assembly to achieve the functionality of a power converter module. This technological approach creates a technological divide between semiconductor devices and power converter modules, hindering close integration and preventing the achievement of high power density, ease of use, and intelligent application effects.

[0003] In the existing technology, there are a few high-voltage semiconductor modules with integrated features. These semiconductor modules generally have insufficient power density and have many problems in terms of product performance (such as insulation, low inductance, current sharing, etc.), production efficiency, ease of application, reliability and positioning accuracy. Summary of the Invention

[0004] In view of this, the purpose of this invention is to provide an integrated power semiconductor device that can realize the function of a power converter module at the device packaging level. Furthermore, it features high integration, a small footprint, and, for the same power, a power module composed of multiple such semiconductor devices significantly improves the power density compared to conventional power converter modules. It also features low inductance and good current sharing. It achieves a low-inductance, quick-plug electrical direct connection between the DC external interface and the substrate chip, simplifying materials and improving transmission efficiency and reliability. The main circuit and signal circuit are integrated, facilitating assembly, simplifying connection processes, and improving production efficiency and yield. It is convenient for production assembly and quick-plug applications.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] An integrated power semiconductor device, comprising:

[0007] The power unit has a substrate chip;

[0008] The control unit is equipped with a control circuit board;

[0009] An interconnection unit is disposed between the power unit and the control unit, and the interconnection unit is provided with an insulating shell, a DC positive copper busbar, a DC negative copper busbar, a signal terminal and at least one AC copper busbar;

[0010] The DC positive copper busbar and the DC negative copper busbar are stacked on top of each other and extend to the DC side to form a quick-plug interface; the AC copper busbar extends to the AC interface on the side opposite to the quick-plug interface to avoid overlapping with the DC positive copper busbar and the DC negative copper busbar.

[0011] One end of the signal terminal is connected to the control circuit board, and the other end is connected to the substrate chip. The DC positive copper busbar, the DC negative copper busbar, and the AC copper busbar are all connected to the substrate chip.

[0012] The DC positive copper busbar, the DC negative copper busbar, the signal terminal, and the AC copper busbar are all fixed to the insulating housing.

[0013] Preferably, the AC busbar includes a first AC busbar and a second AC busbar, and both the first AC busbar and the second AC busbar extend to the AC interface on the side opposite to the quick-plug interface; both the first AC busbar and the second AC busbar are connected to the substrate chip; both the first AC busbar and the second AC busbar are fixed to the insulating shell.

[0014] Preferably, the number of AC copper busbars is one.

[0015] Preferably, the DC positive copper busbar is provided with a DC positive pin, the DC negative copper busbar is provided with a DC negative pin, the AC copper busbar is provided with an AC pin, and the end of the signal terminal connected to the substrate chip is provided with a terminal pin.

[0016] The DC positive pin, the DC negative pin, the AC pin, and the terminal pin are all connected to the substrate chip in the same way.

[0017] Preferably, the DC positive pin, the DC negative pin, the AC pin, and the terminal pin are staggered.

[0018] Preferably, the signal terminal and the control circuit board are connected by a threaded connection or a plug-in connection, or by an abutment through an elastic element.

[0019] Preferably, the AC copper busbar, the substrate chip, the DC positive copper busbar, the DC negative copper busbar, and the signal terminals are all symmetrically arranged about the middle section of the length direction.

[0020] Preferably, the tightly stacked area between the DC positive copper busbar and the DC negative copper busbar is provided with an insulating plate or filled with insulating glue.

[0021] Preferably, the DC positive copper busbar, the DC negative copper busbar, and the signal terminal are all injection molded and encapsulated within the insulating housing;

[0022] The AC copper busbar is injection-molded and wrapped inside the insulating housing or detachably fixedly connected to the insulating housing through a connecting member.

[0023] Preferably, an insulating frame in the shape of a Chinese character "Ri" is integrally injection-molded at the quick plug-in interface of the insulating housing, and the DC positive copper busbar and the DC negative copper busbar are respectively located in the upper square-shaped structure and the lower square-shaped structure of the insulating frame.

[0024] Preferably, positioning pins are integrally injection-molded on both sides of the quick plug-in interface.

[0025] Preferably, handles are integrally injection-molded on both sides of the AC interface.

[0026] Preferably, the power unit is provided with a radiator, and the liner chip is welded on the upper surface of the radiator.

[0027] Preferably, the liner chip is provided with a temperature sensor, one end of the signal terminal is connected to the control circuit board, and the other end is connected to the temperature sensor.

[0028] Preferably, the radiator is provided with two blind plug-in type quick water joints and cooling channels, one of the blind plug-in type quick water joints is arranged at the inlet of the cooling channel, and the other blind plug-in type quick water joint is arranged at the outlet of the cooling channel.

[0029] Preferably, the control circuit board is provided with an electrical signal interface and an optical signal interface.

[0030] Preferably, the control unit is provided with a control box and a top cover, the control circuit board is arranged inside the control box, and ventilation holes are arranged on the side surface of the control box and the top cover.

[0031] During the process of using the integrated power semiconductor device provided by the present invention, it is connected to the liner chip of the single-phase bridge circuit through the DC positive copper busbar, the DC negative copper busbar, and the AC copper busbar. One end of the signal terminal is connected to the control circuit board, and the other end is connected to the liner chip; and corresponding control is carried out through the self-contained control circuit board; a radiator is integrated inside to dissipate heat from the liner chip by itself; the function of the conversion module can be realized at the device packaging level. Under the same power, the power components combined by multiple such devices can reduce the volume by more than 50% compared with the conventional conversion module, that is, the power density of the power components combined by multiple such devices can be increased by more than 50% compared with the conventional conversion module, realizing high integration and high power density.

[0032] In addition, since the DC positive copper busbar and the DC negative copper busbar are arranged in an upper and lower laminated manner and extend to the DC side to form a quick plug-in interface, a low-inductance quick plug-in type electrical direct connection between the external interface and the liner chip is realized, which is not only convenient to use but also has good low-inductance performance.

[0033] During the assembly process, the direct connection from the main circuit board chip to the interface does not require a low-inductance busbar to be set, which can significantly reduce the volume, weight and cost of the integrated power semiconductor device; it reduces the assembly and transfer processes of the low-inductance busbar and the production process of the low-inductance busbar itself, improves the production efficiency while solving the reliability problems caused by transfer; it can also eliminate the problems of a large number of packaging components, pollution, differences in multi-material characteristics and low reliability caused by the introduction of the low-inductance busbar, and improve the product performance.

[0034] Moreover, the signal terminal and the main circuit copper bar are integrated in the insulating housing and connected to the board chip by the same process, which solves the problems of multiple processes, multiple toolings, low production efficiency and difficult precision guarantee caused by assembling, positioning and welding one by one, and protects the signal terminal from being deformed and is easy to assemble.

[0035] In addition, the AC copper bar extends to the side opposite to the quick plug-in interface to avoid overlapping with the DC positive copper bar and the DC negative copper bar; it avoids the operation of opening avoidance holes between the AC copper bar and the DC positive copper bar and the DC negative copper bar, ensures the copper bar area and the laminated area of the DC positive copper bar and the DC negative copper bar, can effectively improve the current-carrying capacity, and further ensures the low-inductance performance.

[0036] In terms of the interface and the internal layout, an integrated all-closed "day" - shaped outer frame is adopted, which ensures the insulation ability of the quick plug-in interface, can increase the width of the copper bar, and realizes the compatibility of high voltage and large current-carrying capacity of the interface.

[0037] The setting of the blind plug-in quick interface for the water and electricity integration on the DC side is convenient to use. The positioning pin is integrally injection-molded with the housing, and the positioning accuracy is high, which ensures the application effect of the blind plug-in quick interface for the water and electricity integration.

[0038] The handle structure integrally formed with the housing is convenient for plug-in board installation and handling, and saves space.

[0039] It is symmetrically arranged about the middle section in the length direction to improve the current sharing performance. Brief Description of the Drawings

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative work.

[0041] Figure 1 It is the main circuit diagram of the first specific embodiment of the integrated power semiconductor device provided by the present invention;

[0042] Figure 2 This is a schematic diagram of the AC side structure of a specific embodiment of the integrated power semiconductor device provided by the present invention;

[0043] Figure 3 This is a schematic diagram of the DC side structure of a specific embodiment of the integrated power semiconductor device provided by the present invention;

[0044] Figure 4 An exploded view of a specific embodiment of the integrated power semiconductor device provided by the present invention;

[0045] Figure 5 This is a cross-sectional structural schematic diagram of a specific embodiment of the integrated power semiconductor device provided by the present invention;

[0046] Figure 6 The main circuit diagram is shown in a second specific embodiment of the integrated power semiconductor device provided by the present invention.

[0047] Figure 7 This is a schematic diagram of the AC side structure of a specific embodiment two of the integrated power semiconductor device provided by the present invention;

[0048] Figure 8 This is a schematic diagram of the DC side structure of a specific embodiment two of the integrated power semiconductor device provided by the present invention;

[0049] Figure 9 An exploded view of a second specific embodiment of the integrated power semiconductor device provided by the present invention;

[0050] Figure 10 This is a cross-sectional structural schematic diagram of a specific embodiment two of the integrated power semiconductor device provided by the present invention.

[0051] Figure 1-10 middle:

[0052] 1 is the heat sink, 10 is the blind-plug quick-connect water connector, 2 is the substrate chip, 20 is the temperature sensor, 3 is the insulating shell, 30 is the shell body, 300 is the insulating frame, 301 is the insulating plate, 302 is the positioning pin, 303 is the handle, 31 is the DC positive copper busbar, 310 is the DC positive pin, 32 is the DC negative copper busbar, 320 is the DC negative pin, 33 is the AC copper busbar, 330 is the AC pin, 34 is the signal terminal, 340 is the terminal pin, 341 is the terminal head, 35 is the first AC copper busbar, 350 is the first AC pin, 36 is the second AC copper busbar, 360 is the second AC pin, 4 is the control box, 5 is the control circuit board, 50 is the electrical signal interface, 51 is the optical signal interface, and 6 is the top cover. Detailed Implementation

[0053] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0054] The core of this invention is to provide an integrated power semiconductor device that enables the functionality of a power converter module at the device packaging level. It features high integration, a small footprint, and, for the same power output, a power module composed of multiple such semiconductor devices achieves higher power density compared to conventional power converter modules. It also boasts low inductance and excellent current sharing. This simplifies materials, improves transmission efficiency and reliability, and achieves integrated main circuitry and signal circuitry, facilitating assembly, simplifying connection processes, and improving production efficiency and yield. It also facilitates production assembly and quick plug-and-play applications.

[0055] The integrated power semiconductor device provided by this invention controls the substrate chip via a control circuit board, allowing it to frequently switch between four states: on, conduction, off, and blocking. It connects to external devices via a quick-plug interface and an AC interface, enabling the conversion of electrical energy between DC positive, DC negative, and AC electrodes. Single or multiple integrated power semiconductor devices, combined with specific control methods, can perform functions such as rectification, inversion, and chopping. Heat loss generated during energy conversion can be dissipated by a heat sink, ensuring the junction temperature of the power semiconductor chip remains within a safe range. This invention uses a single-phase bridge, two-phase bridge, or other structured main circuit. The power semiconductor chip included in the substrate chip can be an IGBT, MOSFET, diode, or other power semiconductor chip, depending on the specific requirements.

[0056] Please refer to Figures 1 to 10 .

[0057] This specific embodiment discloses an integrated power semiconductor device, including:

[0058] The power unit is provided with a substrate chip 2 and a heat sink 1;

[0059] The control unit is equipped with a control box 4 and a top cover 6, and the control box 4 is equipped with a control circuit board 5.

[0060] An interconnection unit is disposed between the power unit and the control unit, and the interconnection unit is provided with an insulating housing 3, a DC positive copper busbar 31, a DC negative copper busbar 32, a signal terminal 34, and at least one AC copper busbar 33.

[0061] The DC positive copper busbar 31 and the DC negative copper busbar 32 are stacked on top of each other and extend to the DC interface on the DC side. This DC interface is a DC fast electrical interface. The AC copper busbar 33 extends to the AC interface on the side opposite to the DC interface to avoid overlapping with the DC positive copper busbar 31 and the DC negative copper busbar 32.

[0062] One end of the signal terminal 34 is connected to the control circuit board 5, and the other end is connected to the substrate chip 2. The DC positive copper busbar 31, the DC negative copper busbar 32 and the AC copper busbar 33 are all connected to the substrate chip 2.

[0063] DC positive copper busbar 31, DC negative copper busbar 32, signal terminal 34 and AC copper busbar 33 are all fixed to the insulating housing 3.

[0064] The power unit performs energy conversion under the control of the control unit; the interconnection unit provides a signal transmission channel between the power unit and the control unit, provides an energy flow path between the power unit and the external electrical system, and also functions as a housing and handle 303.

[0065] Preferably, in order to control the heat dissipation of the circuit board 5, ventilation holes can be provided on the side and top cover 6 of the control box 4.

[0066] The control circuit board 5 is located inside the control box 4 and controls, detects, protects and diagnoses the power unit through the signal terminal 34. The control circuit board 5 is equipped with an electrical signal interface 50 and an optical signal interface 51, which are connected to an external control power supply and communicate with the outside through the electrical signal interface 50 and the optical signal interface 51.

[0067] Furthermore, a temperature sensor 20 can be installed on the substrate chip 2. One end of the signal terminal 34 is connected to the control circuit board 5, and the other end is connected to the temperature sensor 20 to detect the temperature of the substrate chip 2, thereby avoiding excessive junction temperature and playing a protective role.

[0068] In the process of using the integrated power semiconductor device provided in this specific embodiment, the DC positive copper busbar 31, DC negative copper busbar 32, and AC copper busbar 33 are connected to the main circuit. One end of the signal terminal 34 is connected to the control circuit board 5, and the other end is connected to the substrate chip 2. The DC positive copper busbar 31, DC negative copper busbar 32, and AC copper busbar 33 are all connected to the substrate chip 2. The control circuit board 5 is used to control the device to operate in different states. The internal heat sink 1 provides heat dissipation for the substrate chip 2. The function of the power converter module can be realized at the device packaging level.

[0069] In addition, during the assembly process, the DC positive copper busbar 31 and DC negative copper busbar 32 are stacked on top of each other and extend to the DC side to form a quick-plug interface; this achieves a low-inductance quick-plug electrical direct connection between the external interface and the substrate chip 2; the AC copper busbar 33 extends to the opposite side of the quick-plug interface to avoid overlapping with the DC positive copper busbar 31 and DC negative copper busbar 32; this avoids the need to open clearance holes between the AC copper busbar and the DC positive copper busbar 31 and DC negative copper busbar 32, ensuring the copper busbar area and the stacked area of ​​the DC positive copper busbar 31 and DC negative copper busbar 32, which can effectively improve the current carrying capacity and achieve low-inductance performance.

[0070] Furthermore, the integrated power semiconductor device provided in this specific embodiment does not require a low-inductance busbar, which can significantly reduce the size, weight, and cost of the device, reduce the assembly and connection processes of the low-inductance busbar and the production processes of the low-inductance busbar itself, improve production efficiency, and solve the reliability problems caused by connection. It can also eliminate the problems of a large number of packaged components, contamination, differences in material properties, and low reliability caused by the introduction of low-inductance busbar, thereby improving product performance.

[0071] In one specific embodiment, such as Figure 1 As shown, the main circuit is a single-phase bridge circuit, and the AC terminal is an AC copper busbar 33, that is, the AC copper busbar 33 is connected to the single-phase bridge circuit. The two ends of the single-phase bridge circuit are connected to DC+ and DC- respectively, that is, the two ends of the single-phase bridge circuit are connected to DC positive copper busbar 31 and DC negative copper busbar 32 respectively. Of course, the main circuit can also be a two-phase bridge circuit or other structural forms, depending on the actual situation.

[0072] In another specific embodiment, the AC busbar includes a first AC busbar 35 and a second AC busbar 36, both of which extend to the AC interface on the side opposite to the quick-plug interface; both the first AC busbar 35 and the second AC busbar 36 are connected to the substrate chip; both the first AC busbar 35 and the second AC busbar 36 are fixed to the insulating shell; as shown... Figure 6 As shown, this is the main circuit of a two-phase bridge. The two bridge arms are symmetrically designed and share a common DC positive copper busbar and DC negative copper busbar. They can be controlled separately and independently or work synchronously. Figure 6 At AC(A), the first AC copper busbar 35 is connected to the A-phase circuit. At AC(B), the second AC copper busbar 36 is connected to the B-phase circuit. Both ends of the A and B phase circuits are connected to DC+ and DC- respectively, that is, both ends of the A and B phase circuits are connected to DC positive copper busbar 31 and DC negative copper busbar 32 respectively.

[0073] When the main circuit is a two-phase bridge circuit, both phases are connected via DC positive copper busbar 31 and DC negative copper busbar 32. The first AC copper busbar 35 is connected to one phase, and the second AC copper busbar 36 is connected to the other phase. One end of the signal terminal 35 is connected to the control circuit board 5, and the other end is connected to the substrate chip 2. The DC positive copper busbar 31, DC negative copper busbar 32, first AC copper busbar 35, and second AC copper busbar 36 are all connected to the substrate chip 2. The control circuit board 5 controls the circuit to operate in different states. It can control any one phase of the circuit independently, or control both phases separately or in parallel. The internal heat sink 1 provides heat dissipation for the substrate chip 2. The two-phase bridge module function is realized at the device packaging level.

[0074] Based on the above embodiments, the DC positive copper busbar 31 can be provided with a DC positive pin 310, the DC negative copper busbar 32 can be provided with a DC negative pin 320, the AC copper busbar 33 can be provided with an AC pin 330, and the end of the signal terminal 34 connected to the substrate chip 2 can be provided with a terminal pin 340. The DC positive pin 310, DC negative pin 320, AC pin 330, and terminal pin 340 are all connected to the substrate chip 2 through the same connection method. When the AC copper busbar 33 includes a first AC copper busbar 35 and a second AC copper busbar 36, the first AC copper busbar 35 can be provided with a first AC pin 350, the second AC copper busbar 36 can be provided with a second AC pin 360, and the DC positive pin 310, DC negative pin 320, first AC pin 350, second AC pin 360, and terminal pin 340 are all connected to the substrate chip 2 through the same connection method. This achieves integrated main circuit and signal circuit, convenient assembly, simplified connection process, and improved production efficiency and yield.

[0075] In this specific embodiment, the DC positive pin 310, DC negative pin 320, AC pin 330, and terminal pin 340 are all connected to the substrate chip 2 by soldering. When the AC copper busbar 33 includes a first AC copper busbar 35 and a second AC copper busbar 36, the DC positive pin 310, DC negative pin 320, first AC pin 350, second AC pin 360, and terminal pin 340 are all connected to the substrate chip 2 by soldering. Other suitable connection methods are also possible, which will not be elaborated here. The DC positive pin 310, DC negative pin 320, AC pin 330, and terminal pin 340 can all be configured as bent pins, or other suitable forms, which will not be elaborated here.

[0076] During the connection process, the DC positive pin 310, DC negative pin 320, AC pin 330, and terminal pin 340 can be connected to the substrate chip 2 in a unified manner. When the AC copper busbar 33 includes the first AC copper busbar 35 and the second AC copper busbar 36, the DC positive pin 310, DC negative pin 320, first AC pin 350, second AC pin 360, and terminal pin 340 can be connected to the substrate chip 2 in a unified manner. The connection of the DC positive pin 310, DC negative pin 320, AC pin 330, and terminal pin 340 to the substrate chip 2 can be achieved in the same process, which has a significant advantage in production efficiency. Compared with the method of using pins or other types of terminal heads 341 and then soldering them to the circuit board and bonding wires, this solution has a simpler process and can achieve a more reliable and efficient direct signal connection.

[0077] Preferably, the DC positive pin 310, DC negative pin 320, AC pin 330, and terminal pin 340 can be staggered; when the AC copper busbar 33 includes a first AC copper busbar 35 and a second AC copper busbar 36, the DC positive pin 310, DC negative pin 320, first AC pin 350, second AC pin 360, and terminal pin 340 can be staggered to avoid interference and facilitate electrical connection with the substrate chip 2.

[0078] It should be noted that the positional relationship between the DC positive copper busbar 31 and the DC negative copper busbar 32 in this application document can be interchanged according to the design of the internal substrate chip 2.

[0079] The signal terminal 34 is connected to the control circuit board 5 at one end and is provided with a terminal head 341. The terminal head 341 and the control circuit board 5 can be connected by a thread, a plug-in connection, or by abutment contact through an elastic element, depending on the actual situation.

[0080] Based on the above embodiments, such as Figure 4 As shown, the AC copper busbar 33, substrate chip 2, DC positive copper busbar 31, DC negative copper busbar 32, and signal terminal 34 can all be symmetrically arranged about the middle section of the length direction to ensure good current sharing performance; as shown Figure 9 As shown, the first AC copper busbar 350 and the second AC copper busbar 360 can be symmetrically arranged about the middle section of the length direction; the substrate chip 2, the DC positive copper busbar 31, the DC negative copper busbar 32 and the signal terminal 35 are also symmetrically arranged about the middle section of the length direction to ensure good current sharing performance. Furthermore, due to the symmetrical structure design of the two-phase circuit, the two have the same function and performance, and can be interchanged when connecting the circuit, which will improve the convenience and compatibility of use.

[0081] like Figure 5 , Figure 10As shown, an insulating plate 301 or insulating glue is provided in the tightly stacked area between the DC positive copper busbar 31 and the DC negative copper busbar 32. In the actual design process, insulating glue is poured into the cavity formed between the insulating shell 3 and the heat sink 1, and into the cavity formed between the insulating shell 3 and the control box 4. The DC positive copper busbar 31, the DC negative copper busbar 32, the AC copper busbar 33, and the signal terminals 34 inside the insulating shell 3 achieve high voltage insulation through the insulating shell and the poured insulating glue.

[0082] Preferred, such as Figure 5 , Figure 10 As shown, the insulating plate 301 is part of the insulating shell 3. The insulating plate 301 and the insulating shell 3 are an integral structure. The insulating plate 301 can be retained or removed depending on the actual insulation requirements and product voltage level, and the specific determination is based on the actual situation.

[0083] Based on the above embodiments, the DC positive copper busbar 31, the DC negative copper busbar 32 and the signal terminal 34 can all be injection molded and wrapped inside the insulating shell 3; the AC copper busbar 33 can be injection molded and wrapped inside the insulating shell 3, or it can be detachably and fixedly connected to the insulating shell 3 through connectors.

[0084] The injection molding encapsulation method can improve the positional accuracy of DC positive copper busbar 31, DC negative copper busbar 32 and signal terminal 34 and reduce errors. The production process does not require separate tooling positioning. Furthermore, since the signal terminal 34 is injection molded and encapsulated with the insulating shell 3, the structure has good strength and is not easily deformed, which can improve the reliability of the connection.

[0085] like Figure 3 , Figure 8 As shown, the insulating housing 3 has an integrally injection-molded H-shaped insulating frame 300 at the quick-plug interface. The DC positive copper busbar 31 and the DC negative copper busbar 32 are located in the upper and lower H-shaped structures of the insulating frame 300, respectively, ensuring their insulation from the outside and between them. Furthermore, there is no gap between the insulating frame 300 and the housing body 30, which can reduce the insulation distance between the DC positive copper busbar 31 and the DC negative copper busbar 32 and between them and the outside, thereby increasing the width of the DC positive copper busbar 31 and the DC negative copper busbar 32, improving current carrying capacity and low inductance performance.

[0086] like Figure 3 , Figure 8 As shown, the quick-plug interface has integrated injection-molded positioning pins 302 on both sides. During assembly, the positioning pins 302 engage with corresponding pin holes on other devices. Compared to the assembly of copper busbars or low-inductance busbars with the housing, the DC positive copper busbar 31, DC negative copper busbar 32, and positioning pins 302 exhibit higher precision, smaller errors, and better consistency. For quick-plug connections, this method provides more accurate guidance and positioning, preventing connection failures or damage to external systems.

[0087] like Figure 4 , Figure 9 As shown, the AC interface has integrated injection-molded handles 303 on both sides, facilitating plug-and-play applications and transportation. The handles 303 are injection-molded with an insulating shell 3, eliminating the need for separate assembly, maximizing space utilization, increasing power density, and providing good structural strength.

[0088] Based on the above embodiments, the substrate chip 2 can be directly soldered to the upper surface of the heat sink 1 without the need for a common semiconductor device substrate. This reduces the thermal resistance between the substrate chip 2 and the heat sink 1, which helps to lower the junction temperature of the substrate chip 2 and reduce weight and volume.

[0089] The heat sink 1 is equipped with two blind-plug quick-connect water connectors 10 and a cooling channel. One blind-plug quick-connect water connector 10 is located at the inlet of the cooling channel, and the other blind-plug quick-connect water connector 10 is located at the outlet of the cooling channel, so as to remove the heat generated by the power unit and reduce the junction temperature of the substrate chip 2.

[0090] The blind-plug quick water connector 10, combined with the quick-plug interface and the positioning pin 302 in this application, forms a blind-plug integrated water and electricity quick connection, which enables the invention to achieve simultaneous and quick connection of water and electricity, making it convenient to use.

[0091] The integrated power semiconductor device provided by this invention can reduce the volume of a power module by more than 50% compared to a conventional converter module when multiple such devices are combined, at the same power. In other words, the power density of a power module combined with multiple such devices can be increased by more than 50% compared to a conventional converter module, achieving high integration, high power density, low inductance, and good current sharing characteristics.

[0092] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. Any combination of all embodiments provided by this invention is within the scope of protection of this invention and will not be elaborated upon here.

[0093] The integrated power semiconductor device provided by this invention has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are merely for the purpose of helping to understand the method and core ideas of this invention. It should be noted that those skilled in the art can make various improvements and modifications to this invention without departing from its principles, and these improvements and modifications also fall within the protection scope of the claims of this invention.

Claims

1. An integrated power semiconductor device, characterized in that, include: Power unit, which is provided with substrate chip (2); The control unit is equipped with a control circuit board (5); An interconnection unit is disposed between the power unit and the control unit, and the interconnection unit is provided with an insulating shell (3), a DC positive copper busbar (31), a DC negative copper busbar (32), a signal terminal (34) and at least one AC copper busbar (33). The DC positive copper busbar (31) and the DC negative copper busbar (32) are stacked on top of each other and extend to the DC side to form a quick-plug interface; the AC copper busbar (33) extends to the AC interface on the side opposite to the quick-plug interface to avoid overlapping with the DC positive copper busbar (31) and the DC negative copper busbar (32); One end of the signal terminal (34) is connected to the control circuit board (5), and the other end is connected to the substrate chip (2). The DC positive copper busbar (31), the DC negative copper busbar (32) and the AC copper busbar (33) are all connected to the substrate chip (2). The DC positive copper busbar (31), the DC negative copper busbar (32), the signal terminal (34) and the AC copper busbar (33) are all fixed to the insulating shell (3). The insulating shell (3) has an integrally injection molded H-shaped insulating frame (300) at the quick-plug interface. The DC positive copper bus (31) and the DC negative copper bus (32) are located in the upper and lower H-shaped structures of the insulating frame (300), respectively. The AC copper busbar includes a first AC copper busbar (35) and a second AC copper busbar (36), and both the first AC copper busbar (35) and the second AC copper busbar (36) extend to the AC interface on the side opposite to the quick-plug interface; both the first AC copper busbar (35) and the second AC copper busbar (36) are connected to the substrate chip; both the first AC copper busbar (35) and the second AC copper busbar (36) are fixed to the insulating shell; The DC positive copper busbar (31) is provided with a DC positive pin (310), the DC negative copper busbar (32) is provided with a DC negative pin (320), the AC copper busbar (33) is provided with an AC pin (330), and the end of the signal terminal (34) connected to the substrate chip (2) is provided with a terminal pin (340). The DC positive pin (310), the DC negative pin (320), the AC pin (330), and the terminal pin (340) are all connected to the substrate chip (2) through the same connection method; The DC positive pin (310), the DC negative pin (320), the AC pin (330), and the terminal pin (340) are staggered.

2. The integrated power semiconductor device according to claim 1, characterized in that, The number of the AC copper busbar (33) is one.

3. The integrated power semiconductor device according to claim 1, characterized in that, The signal terminal (34) and the control circuit board (5) are connected by a thread or a plug, or by an elastic element.

4. The integrated power semiconductor device according to claim 1 or 2, characterized in that, The AC copper busbar (33), the substrate chip (2), the DC positive copper busbar (31), the DC negative copper busbar (32), and the signal terminal (34) are all symmetrically arranged about the middle section in the length direction.

5. The integrated power semiconductor device according to claim 1 or 2, characterized in that, An insulating plate (301) or insulating glue is provided in the tightly stacked area between the DC positive copper busbar (31) and the DC negative copper busbar (32).

6. The integrated power semiconductor device according to claim 1 or 2, characterized in that, The DC positive copper busbar (31), the DC negative copper busbar (32) and the signal terminal (34) are all injection molded and encased in the insulating shell (3); The AC copper busbar (33) is injection molded and encased in the insulating shell (3) or is detachably fixedly connected to the insulating shell (3) via a connector.

7. The integrated power semiconductor device according to claim 6, characterized in that, The quick-plug interface has locating pins (302) integrally injection molded on both sides.

8. The integrated power semiconductor device according to claim 6, characterized in that, The two sides of the communication interface are integrally injection molded with handles (303).

9. The integrated power semiconductor device according to claim 1 or 2, characterized in that, The power unit is provided with a heat sink (1), and the substrate chip (2) is soldered to the upper surface of the heat sink (1).

10. The integrated power semiconductor device according to claim 9, characterized in that, The substrate chip (2) is equipped with a temperature sensor (20). One end of the signal terminal (34) is connected to the control circuit board (5), and the other end is connected to the temperature sensor (20).

11. The integrated power semiconductor device according to claim 9, characterized in that, The radiator (1) is provided with two blind-plug quick water connectors (10) and a cooling channel. One of the blind-plug quick water connectors (10) is located at the entrance of the cooling channel, and the other blind-plug quick water connector (10) is located at the exit of the cooling channel.

12. The integrated power semiconductor device according to claim 1 or 2, characterized in that, The control circuit board (5) is provided with an electrical signal interface (50) and an optical signal interface (51).

13. The integrated power semiconductor device according to claim 12, characterized in that, The control unit is provided with a control box (4) and a top cover (6). The control circuit board (5) is located inside the control box (4). Ventilation holes are provided on the side of the control box (4) and the top cover (6).

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