A power cycle test circuit for common drain MOSFET modules
By designing a power cycle test circuit for the common drain MOSFET module, using the primary control IGBT and the secondary control IGBT, and ensuring that the IGBT of each branch share the gate signal, the problem that the existing test circuit cannot meet the common drain MOSFET test requirements is solved, and a high-reliability power cycle test is achieved.
Patent Information
- Application Number
- CN202310255684.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-03-16
- Publication Date
- 2025-03-25
- Estimated Expiration
- 2043-03-16
AI Technical Summary
The existing power cycle test circuit cannot meet the testing requirements of the common drain MOSFET or common collector IGBT module. Especially when the junction temperature is reversed, the measuring current source will flow due to the conduction of other branches and cannot flow through the reverse diode of the branch MOSFET to be measured, resulting in a junction temperature measurement deviation.
A power cycle test circuit for the common drain MOSFET module was designed. By introducing a first-stage control IGBT and a second-stage control IGBT, and connecting the upper and lower bridge arms of the device to be tested to the source and drain of the corresponding IGBT, ensuring that the first-stage control IGBT and the second-stage control IGBT of each branch share the gate signal, and achieving effective testing of the common drain MOSFET.
This test circuit is highly applicable and can meet the testing requirements of special device types, ensure the reliability and accuracy of the test, and avoid deviations in junction temperature measurement.
Smart Images
Figure CN116203375B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, in particular to a power cycle test circuit for a common-drain MOSFET module. Background Art
[0002] For power cycle test of semiconductor power devices, taking the forward heating and reverse junction temperature measurement of MOSFET as an example, the existing test circuit is as follows: Figure 1 As shown, I L is the load current source, I sense The MOSFET can be replaced with a power device module such as an IGBT according to test requirements, and the corresponding measurement current source flow direction, gate control signal, etc. will also change accordingly.
[0003] In existing test circuits, the three devices or chips in the lower arm of the device under test share a common source to form a current loop, while the three devices or chips in the upper arm of the device under test do not share a common drain. This test circuit cannot meet the requirements for MOSFETs with a common drain or IGBT modules with a common collector. This is because when the upper arm shares a common drain, when this test circuit measures junction temperature in reverse, the measurement current source will flow from the load current loop due to the conduction of other branches, and will not flow through the reverse diode of the MOSFET in the branch under test, making junction temperature measurement impossible. For example, the measurement current of the first branch will also flow through the second and third branches, causing the current flowing through the device under test in the first branch to decrease, resulting in a deviation in the junction temperature measurement. Summary of the Invention
[0004] The object of the present invention is to provide a power cycle test circuit for a common-drain MOSFET module to solve the problems raised in the above background technology.
[0005] To achieve the above object, the present invention provides the following technical solutions:
[0006] A power cycle test circuit for a common drain MOSFET module includes a first-level control IGBT and a device under test, one end of the device under test is connected to the first-level control IGBT, and the other end of the first-level control IGBT is connected to a load current source I L , also includes a secondary control IGBT, one end of the secondary control IGBT is connected to the other end of the device under test, and the other end of the secondary control IGBT is connected to the load current source I L the other end.
[0007] As a further technical solution of the present invention: the primary control IGBT includes three IGBTs connected in parallel, and the three devices of the upper bridge arm of the device under test are respectively connected to the sources of the three IGBTs in the primary control IGBT.
[0008] As a further technical solution of the present invention: the secondary control IGBT includes three IGBTs connected in parallel, and the three devices of the lower bridge arm of the device under test are respectively connected to the drains of the three IGBTs in the secondary control IGBT.
[0009] As a further technical solution of the present invention: the primary control IGBT and the secondary control IGBT of each branch share a common gate signal.
[0010] As a further technical solution of the present invention: the two devices in the upper and lower bridge arms of the device under test on each branch share a gate signal.
[0011] Compared with the prior art, the present invention has the following beneficial effects: the power cycle test circuit for the common-drain MOSFET module of the present invention has strong applicability, can meet the test requirements of special device types, and has high reliability. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Figure 1 Circuit diagram for existing power cycle test.
[0013] Figure 2 This is a circuit diagram of a power cycle test of the present invention.
[0014] Figure 3 The following is a control timing diagram taking the commutation between branch 1 and branch 2 as an example. DETAILED DESCRIPTION
[0015] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.
[0016] See also Figure 2 A power cycle test circuit for a common drain MOSFET module includes a first-level control IGBT and a device under test, one end of the device under test is connected to the first-level control IGBT, and the other end of the first-level control IGBT is connected to a load current source I L , also includes a secondary control IGBT, one end of the secondary control IGBT is connected to the other end of the device under test, and the other end of the secondary control IGBT is connected to the load current source I L the other end.
[0017] The primary control IGBT contains three IGBTs connected in parallel. The three devices in the upper bridge arm of the device under test are connected to the source of the three IGBTs in the primary control IGBT. The secondary control IGBT contains three IGBTs connected in parallel. The three devices in the lower bridge arm of the device under test are connected to the drain of the three IGBTs in the secondary control IGBT. Therefore, three test branches are formed. The three test branches are named branch 1, branch 2, and branch 3 from left to right. The control timing of each branch is explained as follows. Take the control timing of branch 1 and branch 2 during phase switching in one cycle as an example. Figure 3 The primary and secondary control IGBTs in each branch share a common gate signal, and the two DUTs in each branch share a common gate signal. The proposed test circuit, under this timing control, can implement power cycling tests of common-drain MOSFETs or common-collector IGBTs.
[0018] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be included therein. Any reference sign in a claim should not be construed as limiting the claim to which it relates.
[0019] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.
Claims
1. A power cycle test circuit for a common drain MOSFET module, comprising a primary control IGBT and a device under test, wherein one end of the device under test is connected to the primary control IGBT, and the other end of the primary control IGBT is connected to a load current source I L , characterized in that, It also includes a secondary control IGBT, one end of the secondary control IGBT is connected to the other end of the device under test, and the other end of the secondary control IGBT is connected to the load current source I L The other end of The primary control IGBT comprises three IGBTs connected in parallel, and the three devices of the upper bridge arm of the device under test are respectively connected to the source electrodes of the three IGBTs in the primary control IGBT; The secondary control IGBT comprises three IGBTs connected in parallel, and the three devices of the lower bridge arm of the device under test are respectively connected to the drains of the three IGBTs in the secondary control IGBT; The primary control IGBT and the secondary control IGBT of each branch share the gate signal; The two devices in the upper and lower bridge arms of the device under test on each branch share the gate signal.
Citation Information
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