Fabrication method of lattice structure parts based on large droplet transition of electron beam fuse deposition

Abstract

The present invention provides a method for fabricating lattice-structured parts using large-droplet transition via electron beam fuse deposition. The method comprises: setting an appropriate droplet transition distance before deposition begins; after determining the droplet transition distance, setting electron beam energy and deflection parameters to cause the electron beam to melt a wire; selecting a droplet detachment mode, then melting the wire to form droplets and performing single-layer fuse deposition; after completing single-layer fuse deposition, stopping the electron beam flow and wire transport, cooling the deposited layer until the top temperature is below a threshold; and adjusting the relative position according to part design requirements before depositing the next layer. This method addresses the difficulties and poor quality of existing lattice-structured parts.

Description

Technical Field

[0001] The present invention relates to the technical field of metal additive manufacturing, and in particular to a method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition. Background Art

[0002] Lattice structure parts, as the most complex type of parts, hold broad application prospects in lightweighting. However, their complex structures present significant challenges in their processing and manufacturing. Electron beam fuse deposition (EBFD) is a highly efficient, high-quality, and large-scale metal part manufacturing method, demonstrating promising applications in aerospace, automotive, and medical fields. Based on the concept of discrete-deposition fabrication, EBFD utilizes bottom-up manufacturing techniques, providing a means for the fabrication of complex parts.

[0003] In the process of preparing lattice structure parts using electron beam fuse deposition technology, unlike the conventional preparation of wall parts, the single layer of the lattice structure parts has basically the same size in all directions within the substrate plane. The substrate does not need to move within the substrate plane during the deposition process. The space for controlling the droplet transition state during the single-layer forming process is limited. Therefore, it is difficult to keep the droplet transition state in a liquid bridge transition state for each layer. The key to the formation of lattice structure parts is to keep the amount of metal consistent layer by layer to obtain a consistent shape. The large droplet non-contact transition mode can decouple the droplet formation from the dripping process, reduce the influence of process parameters on the droplet transition state, and is an ideal transition mode for preparing lattice structure parts using electron beam fuse deposition. However, after the droplet is formed, strong jitter will occur at the end of the metal wire, resulting in the droplet being unable to accurately transition to the molten pool.

[0004] Furthermore, due to the poor heat dissipation conditions created by the vacuum environment of the electron beam fuse deposition process, it is necessary to control the heat input during the deposition process to prevent the parts from collapsing. Therefore, it is necessary to develop a forming process specifically for lattice structure parts. By selecting the appropriate droplet transfer mode and processing flow, the droplets can be stably and controllably transferred to the molten pool while preventing the lattice structure parts from collapsing due to overheating. Summary of the Invention

[0005] The present invention provides a method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition, which is used to solve the problems of great difficulty in manufacturing and poor quality of existing lattice structure parts.

[0006] The present invention provides a method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition, comprising:

[0007] Before deposition begins, set the appropriate droplet transfer distance;

[0008] After determining the droplet transfer distance, setting electron beam energy parameters and deflection parameters to enable the electron beam to melt the wire;

[0009] First, a droplet detachment mode is selected to perform single-layer structure fuse deposition after the wire material is melted to form droplets;

[0010] After the single-layer structure fuse deposition is completed, the electron beam and wire feeding are stopped, and the deposited layer is cooled until the top temperature is lower than the threshold temperature;

[0011] Adjust the relative position according to the part design requirements and perform the next layer deposition.

[0012] According to a method for preparing a lattice structure part based on large droplet transition of electron beam fuse deposition provided by the present invention, before the deposition begins, setting a suitable droplet transition distance specifically includes:

[0013] Before the start of the single-layer deposition process, the position of the substrate is adjusted so that the distance between the intersection of the wire axis and the electron gun axis and the substrate or the surface of the deposited layer is greater than the maximum size of the molten droplet in the direction of gravity during the forming process;

[0014] The droplets do not come into contact with the deposited layer or molten pool during their formation before they fall.

[0015] According to a method for preparing a lattice structure part based on large droplet transition of electron beam fuse deposition provided by the present invention, after determining the droplet transition distance, setting the electron beam energy parameter and deflection parameter to make the electron beam melt the wire material specifically includes:

[0016] The electron beam deflection is achieved by inputting two sets of sinusoidal drive signals with the same amplitude and frequency and a phase difference of π / 2 into the electron beam deflection coil;

[0017] During the circular deflection of the electron beam, the radius of the circular deflection trajectory and the deflection angular velocity are determined by the amplitude i and frequency f of the sinusoidal drive signal;

[0018] After the electron beam energy parameters and deflection parameters are determined, a molten pool is formed on the substrate or the deposited layer during a single-layer deposition process and the deposited layer does not collapse due to overheating before the molten droplets fall.

[0019] According to the present invention, a method for preparing a lattice structure part based on large droplet transition of electron beam fuse deposition is provided, wherein the droplet detachment mode is first selected, and then the wire material is melted to form droplets to perform single-layer structure fuse deposition, specifically comprising:

[0020] After the wire material melts and forms a molten droplet, the droplet detachment mode includes a natural detachment mode and a forced detachment mode;

[0021] The natural detachment mode is a mode in which the gravity of the molten droplet increases continuously as the wire is fed into the melting process, and after exceeding the mechanical equilibrium condition, the droplet naturally detaches from the wire and transitions to the molten pool;

[0022] The forced detachment mode is a mode in which, before the molten droplet reaches the critical mechanical equilibrium condition for natural detachment, when the molten droplet reaches the designed required metal amount, an energy pulse higher than the energy used in the current fusing process is quickly applied to the junction of the unmelted part of the wire and the molten droplet, so that the molten droplet detaches from the wire in advance and transitions to the molten pool.

[0023] According to the present invention, a method for preparing a lattice structure component based on large droplet transition of electron beam fuse deposition is provided, wherein after the single-layer structure fuse deposition is completed, the electron beam flow and wire material transmission are stopped, and the deposited layer is cooled until the top temperature is lower than the threshold temperature, specifically comprising:

[0024] After the molten droplet separates from the wire and transitions to the molten pool, the electron beam is turned off and the wire feeding is stopped;

[0025] The deposited layer is cooled until the temperature of the top of the deposited layer is lower than the set threshold temperature.

[0026] According to the present invention, a method for preparing a lattice structure part based on electron beam fuse deposition large droplet transition is provided, wherein the relative position is adjusted according to the part design requirements and the next layer deposition is performed, specifically comprising:

[0027] Adjusting the relative positions of the deposited layer and substrate, the wire material and the electron gun according to the design requirements of the columnar components of the lattice structure;

[0028] The deposition of the next layer is performed according to the steps until the formation of the lattice structure part is completed.

[0029] The present invention also provides a system for preparing lattice structure parts based on electron beam fuse deposition large droplet transition, the system comprising:

[0030] The distance setting module is used to set the appropriate droplet transfer distance before deposition begins;

[0031] a parameter setting module, configured to set electron beam energy parameters and deflection parameters after determining the droplet transfer distance, so as to enable the electron beam to melt the wire;

[0032] A droplet separation module is used to select a droplet separation mode and then melt the wire to form droplets to perform single-layer structure fuse deposition;

[0033] A cooling module is used to stop the electron beam flow and wire conveyance after the single-layer structure fuse deposition is completed, and cool the deposited layer until the top temperature is lower than the threshold temperature;

[0034] The completion module is used to adjust the relative position according to the part design requirements and perform the next layer deposition.

[0035] The present invention also provides an electronic device comprising a memory, a processor and a computer program stored in the memory and runnable on the processor, wherein when the processor executes the program, it implements any of the above-described methods for preparing lattice structure parts based on electron beam fuse deposition large droplet transition.

[0036] The present invention also provides a non-transitory computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the method for preparing lattice structure parts based on large droplet transition of electron beam fuse deposition as described above is implemented.

[0037] The present invention also provides a computer program product, comprising a computer program, which, when executed by a processor, implements any of the above-described methods for preparing lattice structure parts based on large droplet transition by electron beam fuse deposition.

[0038] The present invention provides a method for preparing lattice structure parts based on large droplet transition by electron beam fuse deposition. By using large droplet non-contact transition as the droplet transition mode in the lattice structure part forming process, and decoupling the droplet formation process from the process of transition to the molten pool, a larger process window is achieved, avoiding the difficulty of selecting and controlling the droplet transition distance in the actual forming process. At the same time, two methods of droplet natural detachment and forced detachment are provided, which can achieve precise control of the quality of each layer of metal. In order to cope with the phenomenon of droplet shaking at the end of the wire during the large droplet non-contact transition process, the present invention provides a suppression method using the electron beam to deflect around the droplet, that is, it takes advantage of the easy deflection property of the electron beam and ensures that the droplet transitions stably and accurately to the molten pool. At the same time, the present invention also provides a layer-by-layer cooling process to ensure that the formed structure does not collapse during the forming process of the lattice structure part. The method of the present invention can be used to stably and controllably prepare lattice structure parts using electron beam fuse deposition technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0040] Figure 1 This is a schematic flow chart of a method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition provided by the present invention;

[0041] Figure 2This is a schematic structural diagram of a device for preparing lattice structure parts based on electron beam fuse deposition large droplet transition provided by the present invention;

[0042] Figure 3 This is a working principle diagram of the electron beam circular deflection provided by the present invention;

[0043] Figure 4 This is a schematic diagram of the relative position relationship between the molten droplet and the molten pool when the electron beam is circularly deflected to suppress jitter provided by the present invention;

[0044] Figure 5 This is a schematic diagram of module connections of a system for preparing lattice structure parts based on electron beam fuse deposition large droplet transition provided by the present invention;

[0045] Figure 6 It is a structural schematic diagram of the electronic device provided by the present invention.

[0046] Reference numerals:

[0047] 1: Electron gun; 2: Electron gun axis; 3: Electron beam; 4: Deflection coil; 5: Wire; 6: Wire axis; 7: Molten droplet; 8: Molten pool; 9: Substrate; 10: Sine wave drive signal; 11: Electron beam circular trajectory; 12: Axis of gravity direction;

[0048] 110: distance setting module; 120: parameter setting module; 130: droplet separation module; 140: cooling module; 150: completion module;

[0049] 610: processor; 620: communication interface; 630: memory; 640: communication bus. DETAILED DESCRIPTION

[0050] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0051] refer to Figure 1 The present invention also discloses a method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition, comprising:

[0052] S100, before deposition begins, setting a suitable droplet transfer distance;

[0053] like Figure 2As shown, before the single-layer deposition process begins, the position of substrate 9 should be adjusted so that the distance d between the intersection of wire axis 6 and electron gun axis 2 and the surface of substrate 9 or deposited layer 8 is greater than the maximum size h of the molten droplet in the direction of gravity during the formation process, to ensure that the molten droplet 7 does not contact the deposited layer / molten pool 8 during the formation process before dripping. Preferably, in one embodiment of the present invention, for a TC4 wire with a diameter of 2.0 mm, the distance d can be selected to be greater than 15 mm.

[0054] S200, after determining the droplet transfer distance, setting electron beam energy parameters and deflection parameters to enable the electron beam to melt the wire;

[0055] Under the combined effect of the electron beam energy parameters and the deflection parameters, the molten droplet 7 can be stably formed at the end of the wire 5, and the electron beam 3 can be uniformly deflected around the molten droplet 7 along a circular trajectory 11 at a uniform speed, as shown in FIG. Figure 3 As shown, in order to suppress the violent shaking of the molten droplet 7 at the end of the wire 5 before dripping, and the distance deviation between the axis 12 of the molten droplet 7 in the direction of gravity and the rotation axis of the circular deflection motion of the electron beam 3, that is, the electron gun axis 2, should not exceed half of the radius of the circle obtained by projecting the molten droplet 7 in the plane of the substrate 9, and the molten droplet projection pattern should all be located inside the molten pool 8 area, as shown in FIG. Figure 4 As shown. The deflection of the electron beam 3 is achieved by inputting two sets of sinusoidal drive signals 10 with the same amplitude and frequency and a phase difference of π / 2 into the electron beam deflection coil 4. During the circular deflection of the electron beam, the radius of the electron beam circular trajectory 11 and the deflection angular velocity are determined by the amplitude i and frequency f of the sinusoidal drive signal 10. At the same time, the electron beam energy and deflection parameters also need to ensure that a molten pool 8 can be formed on the substrate 9 or the deposited layer during the single-layer deposition process and that the deposited layer does not collapse due to overheating before the droplet 7 drips. Preferably, in one embodiment of the present invention, for a TC4 wire with a diameter of 2.0 mm, an acceleration voltage of 60 kV, a beam current of 30 mA, a wire feeding speed of 0.5 m / min, and an electron beam circular deflection frequency, that is, a sinusoidal drive signal frequency of 200 Hz, can be selected.

[0056] S300, first selecting a droplet detachment mode, and then melting the wire to form droplets to perform single-layer structure fuse deposition;

[0057] In the present invention, when depositing a single layer of the basic columnar components of a lattice structure part, deposition is performed according to the aforementioned parameters and droplet transfer mode. During the single-layer deposition process, substrate 9 and molten pool 8 remain relatively stationary with the electron gun 1 of the electron beam fuse deposition apparatus. The metal mass contained in each layer of the basic columnar components of the lattice structure is the mass of droplet 7 from the time when wire 5 melts in the region where electron beam 3 is fed to form droplets 7 until the droplets separate from wire 5 and transfer to substrate 9 or molten pool 8 during the deposition process. Therefore, the mode for droplet 7 to separate from wire 5 needs to be selected based on the required single-layer metal mass of the part design, combined with the aforementioned set wire feed speed and electron beam energy parameters. The molten droplet 7 can be separated from the wire 7 and transferred to the molten pool 8 in two modes: natural separation and forced separation. The natural separation mode is a mode in which the gravity of the molten droplet 7 increases continuously as the wire 5 is fed into the melting process, and after exceeding the mechanical equilibrium condition, the molten droplet 7 naturally separates from the wire 5 and transfers to the molten pool. The forced separation mode is a mode in which, before the molten droplet 7 reaches the critical mechanical equilibrium condition for natural separation, when the molten droplet 7 reaches the designed required metal amount, an energy pulse higher than the energy used in the current melting process is quickly applied to the junction of the unmelted part of the wire 5 and the molten droplet 7, so that the molten droplet 7 is separated from the wire 5 in advance and transferred to the molten pool 8. Preferably, in one embodiment of the present invention, the separation mode of the molten droplet 7 adopts the natural separation mode. If the molten droplet 7 melts again due to heat after the molten droplet is separated to form residual molten droplets, no treatment is required as long as the residual molten droplets can be completely melted in the electron beam 3 area when the next layer is deposited. In another embodiment of the present invention, the detachment mode adopts the forced detachment mode, and the application of the energy pulse can adopt a method of step-by-step output of a large electron beam current, or a method of quickly focusing the electron beam on the junction of the unmelted wire and the molten droplet. If the residual molten droplet is formed, the residual molten droplet at the end of the molten droplet 7 should be removed before the next layer is started.

[0058] S400, after the single-layer structure fuse is deposited, the electron beam and the wire are stopped, and the deposited layer is cooled until the top temperature is lower than the threshold temperature;

[0059] After the molten droplet 7 detaches from the wire 5 and transitions to the molten pool, the electron beam 3 is turned off and the wire 5 feed is stopped, allowing the deposited layer to cool until the temperature at the top of the deposited layer falls below a set threshold temperature. The threshold temperature is determined experimentally based on the selection of materials and process parameters. It should ensure that during each layer forming process, the deposited layer does not collapse and lose its original shape due to the continuous action of the electron beam 3. Preferably, in one embodiment of the present invention, for a TC4 wire with a diameter of 2.0 mm, under the aforementioned process parameters and in the natural detachment mode, the threshold temperature can be set to 700°C.

[0060] S500: Adjust the relative position according to the part design requirements and perform the next layer deposition.

[0061] The relative positions of the deposited layer and substrate 9, the wire 5 and the electron gun 1 are adjusted according to the design requirements of the lattice structure columnar component, and the deposition of the next layer is performed according to the above steps until the formation of the lattice structure part is completed.

[0062] The present invention provides a method for preparing lattice structure parts based on large droplet transition by electron beam fuse deposition. By using large droplet non-contact transition as the droplet transition mode in the lattice structure part forming process, the droplet formation process is decoupled from the process of transition to the molten pool, a larger process window is achieved, avoiding the difficulty of selecting and controlling the droplet transition distance in the actual forming process. At the same time, two methods of droplet natural detachment and forced detachment are provided, which can achieve precise control of the quality of each layer of metal. In order to cope with the phenomenon of droplet shaking at the end of the wire during the large droplet non-contact transition process, the present invention provides a suppression method using the electron beam to deflect around the droplet, that is, taking advantage of the easy deflection property of the electron beam, and ensuring that the droplet transitions stably and accurately into the molten pool. At the same time, the present invention also provides a layer-by-layer cooling process to ensure that the formed structure does not collapse during the forming process of the lattice structure part. The method of the present invention can be used to stably and controllably prepare lattice structure parts using electron beam fuse deposition technology.

[0063] The following combination Figure 2 The present invention describes a device for preparing lattice structure parts based on electron beam fuse deposition large droplet transition, the device comprising:

[0064] An electron gun 1, a deflection coil 4, a wire 5 and a molten pool 8. The electron gun is mounted on a bracket. The electron gun 1 emits an electron beam 3. The electron beam 3 passes through the deflection coil 4 along the electron gun axis 2 and is shot toward the wire 5. Under the action of the electron beam 3, the wire 5 forms a molten droplet 7. A molten pool 8 is provided below the molten droplet 7, and the molten droplet 7 drips into the molten pool 8.

[0065] In the present invention, the electron beam 3 is emitted by the electron gun 1, and the wire 5 is melted by the electron beam 3. Controlling the intensity and direction of the electron beam 3 can help the molten droplet to transition stably and accurately into the molten pool.

[0066] The deflection coil 4 is rotatable, and under its action, the electron beam 3 is uniformly deflected along a circular trajectory around the molten droplet 7 at a constant speed. A base plate 9 is positioned below the molten pool 8. The distance between the intersection of the electron gun axis 2 and the wire axis 6 and the base plate 9, or the surface of the deposited layer, is greater than the maximum size of the molten droplet in the direction of gravity during the forming process. The wire coil automatically conveys the wire 5 forward after the end of the wire 5 melts and forms a molten droplet, facilitating continued melting of the wire by the electron beam.

[0067] The present invention provides a lattice structure part preparation device based on large droplet transition of electron beam fuse deposition. By using large droplet non-contact transition as the droplet transition mode in the lattice structure part forming process, and decoupling the droplet formation process from the process of transition to the molten pool, a larger process window is achieved, avoiding the difficulty of selecting and controlling the droplet transition distance in the actual forming process. At the same time, two methods of natural droplet detachment and forced detachment are provided, which can achieve precise control of the quality of each layer of metal. In order to cope with the phenomenon of droplet shaking at the end of the wire during the large droplet non-contact transition process, the present invention provides a suppression method that utilizes the electron beam to deflect around the droplet. That is, it utilizes the characteristic that the electron beam is easy to deflect, and can ensure that the droplet transitions stably and accurately into the molten pool.

[0068] refer to Figure 5 The present invention also discloses a system for preparing lattice structure parts based on electron beam fuse deposition large droplet transition, the system comprising:

[0069] The distance setting module 110 is used to set a suitable droplet transfer distance before deposition begins;

[0070] A parameter setting module 120 is configured to determine the droplet transfer distance and then set electron beam energy parameters and deflection parameters to enable the electron beam to melt the wire;

[0071] The droplet separation module 130 is used to select a droplet separation mode, melt the wire to form droplets, and then perform single-layer structure fuse deposition;

[0072] The cooling module 140 is used to stop the electron beam flow and the wire conveying after the single-layer structure fuse deposition is completed, and cool the deposited layer until the top temperature is lower than the threshold temperature;

[0073] The completion module 150 is used to adjust the relative position according to the part design requirements and perform the next layer deposition.

[0074] The distance setting module 110 adjusts the position of the substrate before the start of the single layer deposition process so that the distance between the intersection of the wire axis and the electron gun axis and the substrate or the surface of the deposited layer is greater than the maximum size of the molten droplet in the direction of gravity during the forming process;

[0075] The droplets do not come into contact with the deposited layer or molten pool during their formation before they fall.

[0076] The parameter setting module 120 realizes electron beam deflection by inputting two sets of sinusoidal drive signals with the same amplitude and frequency and a phase difference of π / 2 into the electron beam deflection coil;

[0077] During the circular deflection of the electron beam, the radius of the circular deflection trajectory and the deflection angular velocity are determined by the amplitude i and frequency f of the sinusoidal drive signal;

[0078] After the electron beam energy parameters and deflection parameters are determined, a molten pool is formed on the substrate or the deposited layer during a single-layer deposition process and the deposited layer does not collapse due to overheating before the molten droplets fall.

[0079] The droplet separation module 130 includes a natural separation mode and a forced separation mode after the wire material melts to form a droplet.

[0080] The natural detachment mode is a mode in which the gravity of the molten droplet increases continuously as the wire is fed into the melting process, and after exceeding the mechanical equilibrium condition, the droplet naturally detaches from the wire and transitions to the molten pool;

[0081] The forced detachment mode is a mode in which, before the molten droplet reaches the critical mechanical equilibrium condition for natural detachment, when the molten droplet reaches the designed required metal amount, an energy pulse higher than the energy used in the current fusing process is quickly applied to the junction of the unmelted part of the wire and the molten droplet, so that the molten droplet detaches from the wire in advance and transitions to the molten pool.

[0082] The cooling module 140 turns off the electron beam and stops feeding the wire after the molten droplet separates from the wire and transitions to the molten pool;

[0083] The deposited layer is cooled until the temperature of the top of the deposited layer is lower than the set threshold temperature.

[0084] Completing module 150, adjusting the relative positions of the deposited layer and substrate, the filament, and the electron gun according to the design requirements of the columnar components of the lattice structure;

[0085] The deposition of the next layer is performed according to the steps until the formation of the lattice structure part is completed.

[0086] The present invention provides a lattice structure component preparation system based on large droplet transition of electron beam fuse deposition. By using large droplet non-contact transition as the droplet transition mode in the lattice structure component forming process, the droplet formation process is decoupled from the process of transition to the molten pool, a larger process window is achieved, avoiding the difficulty of selecting and controlling the droplet transition distance in the actual forming process. At the same time, two methods of natural droplet detachment and forced droplet detachment are provided, which can achieve precise control of the quality of each layer of metal. In order to cope with the phenomenon of droplet shaking at the end of the wire during the large droplet non-contact transition process, the present invention provides a suppression method that utilizes the electron beam to deflect around the droplet, that is, it utilizes the characteristic that the electron beam is easy to deflect, and can ensure that the droplet is stably and accurately transitioned to the molten pool. At the same time, the present invention also provides a layer-by-layer cooling process scheme to ensure that the formed structure does not collapse during the lattice structure component forming process. The method of the present invention can realize the stable and controllable preparation of lattice structure components using electron beam fuse deposition technology.

[0087] Figure 6An example of a physical structure diagram of an electronic device is shown below. Figure 6 As shown, the electronic device may include: a processor 610, a communications interface 620, a memory 630, and a communication bus 640, wherein the processor 610, the communications interface 620, and the memory 630 communicate with each other via the communication bus 640. The processor 610 may call the logic instructions in the memory 630 to execute a method for preparing a lattice structure part based on large droplet transfer by electron beam fuse deposition, the method comprising: setting a suitable droplet transfer distance before deposition begins;

[0088] After determining the droplet transfer distance, setting electron beam energy parameters and deflection parameters to enable the electron beam to melt the wire;

[0089] After selecting the droplet detachment mode, the wire material is melted to form droplets, and single-layer structure fuse deposition is performed;

[0090] After the single-layer structure fuse deposition is completed, the electron beam and wire feeding are stopped, and the deposited layer is cooled until the top temperature is lower than the threshold temperature;

[0091] Adjust the relative position according to the part design requirements and perform the next layer deposition.

[0092] In addition, the logic instructions in the above-mentioned memory 630 can be implemented in the form of a software functional unit and can be stored in a computer-readable storage medium when sold or used as an independent product. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0093] On the other hand, the present invention also provides a computer program product, which includes a computer program. The computer program can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer can execute a method for preparing a lattice structure part based on electron beam fuse deposition large droplet transition provided by the above methods. The method includes: before the deposition starts, setting a suitable droplet transfer distance;

[0094] After determining the droplet transfer distance, setting electron beam energy parameters and deflection parameters to enable the electron beam to melt the wire;

[0095] First, the droplet detachment mode is selected, and then the wire material is melted to form droplets to perform single-layer structure fuse deposition;

[0096] After the single-layer structure fuse deposition is completed, the electron beam and wire feeding are stopped, and the deposited layer is cooled until the top temperature is lower than the threshold temperature;

[0097] Adjust the relative position according to the part design requirements and perform the next layer deposition.

[0098] In another aspect, the present invention further provides a non-transitory computer-readable storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the computer program is implemented to execute a method for preparing a lattice structure part based on electron beam fuse deposition large droplet transition provided by the above methods, the method comprising: before the deposition begins, setting a suitable droplet transfer distance;

[0099] After determining the droplet transfer distance, setting electron beam energy parameters and deflection parameters to enable the electron beam to melt the wire;

[0100] First, the droplet detachment mode is selected, and then the wire material is melted to form droplets to perform single-layer structure fuse deposition;

[0101] After the single-layer structure fuse deposition is completed, the electron beam and wire feeding are stopped, and the deposited layer is cooled until the top temperature is lower than the threshold temperature;

[0102] Adjust the relative position according to the part design requirements and perform the next layer deposition.

[0103] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, i.e., they may be located in one location or distributed across multiple network units. Some or all of the modules may be selected based on actual needs to achieve the objectives of the present embodiment. Persons of ordinary skill in the art will be able to understand and implement the present invention without inventive effort.

[0104] Through the description of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus a necessary general hardware platform, or of course, by hardware. Based on this understanding, the essence of the above technical solution or the part that contributes to the existing technology can be embodied in the form of a software product. The computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a magnetic disk, an optical disk, etc., and includes a number of instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or certain parts of the embodiments.

[0105] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition, characterized in that: include: Before deposition begins, set the appropriate droplet transfer distance; After determining the droplet transfer distance, setting electron beam energy parameters and deflection parameters to enable the electron beam to melt the wire; First, the droplet detachment mode is selected, and then the wire material is melted to form droplets to perform single-layer structure fuse deposition; After the single-layer structure fuse deposition is completed, the electron beam and wire feeding are stopped, and the deposited layer is cooled until the top temperature is lower than the threshold temperature; Adjust the relative position according to the part design requirements and perform the next layer deposition; The method of first selecting the droplet detachment mode and then melting the wire to form droplets to perform single-layer structure fuse deposition specifically includes: After the wire material melts and forms a molten droplet, the droplet detachment mode includes a natural detachment mode and a forced detachment mode; The natural detachment mode is a mode in which the gravity of the molten droplet increases continuously as the wire is fed into the melting process, and after exceeding the mechanical equilibrium condition, the droplet naturally detaches from the wire and transitions to the molten pool; The forced detachment mode is a mode in which, before the molten droplet reaches the critical mechanical equilibrium condition for natural detachment, when the molten droplet reaches the designed metal amount, an energy pulse higher than the energy used in the current fusing process is quickly applied at the junction of the unmelted portion of the wire and the molten droplet, so that the molten droplet detaches from the wire in advance and transitions to the molten pool; After the single-layer structure fuse is deposited, the electron beam and the wire are stopped and the deposited layer is cooled until the top temperature is lower than the threshold temperature. Specifically, the steps include: After the molten droplet separates from the wire and transitions to the molten pool, the electron beam is turned off and the wire feeding is stopped; The deposited layer is cooled until the temperature of the top of the deposited layer is lower than the set threshold temperature.

2. The method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition according to claim 1, characterized in that: Before the deposition begins, set a suitable droplet transfer distance, specifically including: Before the start of the single-layer deposition process, the position of the substrate is adjusted so that the distance between the intersection of the wire axis and the electron gun axis and the substrate or the surface of the deposited layer is greater than the maximum size of the molten droplet in the direction of gravity during the forming process; The droplets do not come into contact with the deposited layer or molten pool during their formation before they fall.

3. The method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition according to claim 1, characterized in that: After determining the droplet transfer distance, setting the electron beam energy parameter and the deflection parameter so that the electron beam melts the wire material specifically includes: The electron beam deflection is achieved by inputting two sets of sinusoidal drive signals with the same amplitude and frequency and a phase difference of π / 2 into the electron beam deflection coil; During the circular deflection of the electron beam, the radius of the circular deflection trajectory and the deflection angular velocity are determined by the amplitude i and frequency f of the sinusoidal drive signal; After the electron beam energy parameters and deflection parameters are determined, a molten pool is formed on the substrate or the deposited layer during the single-layer deposition process and the deposited layer does not collapse due to overheating before the molten droplets fall.

4. The method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition according to claim 1, characterized in that: The step of adjusting the relative position according to the part design requirements and performing the next layer deposition specifically includes: Adjust the relative positions of the deposited layer and substrate, the wire and the electron gun according to the design requirements of the columnar components of the lattice structure; The deposition of the next layer is performed according to the steps until the formation of the lattice structure part is completed.

5. A system for preparing lattice structure parts based on electron beam fuse deposition large droplet transition, characterized in that: The system comprises: The distance setting module is used to set the appropriate droplet transfer distance before deposition begins; a parameter setting module, configured to set electron beam energy parameters and deflection parameters after determining the droplet transfer distance, so as to enable the electron beam to melt the wire; A droplet separation module is used to select a droplet separation mode and then melt the wire to form droplets to perform single-layer structure fuse deposition; A cooling module is used to stop the electron beam flow and wire conveyance after the single-layer structure fuse deposition is completed, and cool the deposited layer until the top temperature is lower than the threshold temperature; The completion module is used to adjust the relative position according to the part design requirements and perform the next layer deposition; The method of first selecting the droplet detachment mode and then melting the wire to form droplets to perform single-layer structure fuse deposition specifically includes: After the wire material melts and forms a molten droplet, the droplet detachment mode includes a natural detachment mode and a forced detachment mode; The natural detachment mode is a mode in which the gravity of the molten droplet increases continuously as the wire is fed into the melting process, and after exceeding the mechanical equilibrium condition, the droplet naturally detaches from the wire and transitions to the molten pool; The forced detachment mode is a mode in which, before the molten droplet reaches the critical mechanical equilibrium condition for natural detachment, when the molten droplet reaches the designed metal amount, an energy pulse higher than the energy used in the current fusing process is quickly applied at the junction of the unmelted portion of the wire and the molten droplet, so that the molten droplet detaches from the wire in advance and transitions to the molten pool; After the single-layer structure fuse is deposited, the electron beam and the wire are stopped and the deposited layer is cooled until the top temperature is lower than the threshold temperature. Specifically, the steps include: After the molten droplet separates from the wire and transitions to the molten pool, the electron beam is turned off and the wire feeding is stopped; The deposited layer is cooled until the temperature of the top of the deposited layer is lower than the set threshold temperature.

6. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the program, the method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition as described in any one of claims 1 to 4 is implemented.

7. A non-transitory computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition as claimed in any one of claims 1 to 4 is implemented.

8. A computer program product comprising a computer program, characterized in that When the computer program is executed by a processor, the method for preparing lattice structure parts based on electron beam fuse deposition large droplet transition as claimed in any one of claims 1 to 4 is implemented.

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