Hybrid integrated phased array lidar chip

Abstract

The application provides a hybrid integrated phased array laser radar chip, comprising: an SOI substrate; a plurality of III-V semiconductor lasers; and a plurality of groups of phased array laser radar chips; wherein each phased array laser radar chip comprises: a mode spot transformer connected with the III-V semiconductor laser; a beam splitter group connected with the mode spot transformer and used for splitting an input optical signal into a plurality of optical signals; a phase shifter group connected with the beam splitter group and comprising a plurality of sub-phase shifters, each of the plurality of optical signals being connected to one sub-phase shifter; and a grating antenna used for combining the optical signals transmitted by the sub-phase shifters and emitting outward; the plurality of groups of phased array laser radar chips and the plurality of III-V semiconductor lasers are arranged on the SOI substrate along a preset direction.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radar, in particular to a hybrid integrated phased array lidar chip. BACKGROUND

[0002] Laser radar has been widely used in automatic driving, robot technology, aerial surveying and mapping, target tracking and other fields. There are many schemes for laser radar, including mechanical rotation, hybrid solid state, and full solid state. Optical phased array is an important part of full solid state laser radar system, which has the advantages of complete solidification, high reliability, small size, convenient control, high integration and the like. Optical phased array can be established on a silicon-on-insulator (SOI) platform. Silicon-based optical phased array based on SOI material has attracted high attention in the industry in recent years due to its ability to utilize mature microelectronic complementary metal-oxide-semiconductor (CMOS) process platform.

[0003] On the one hand, in existing phased array lidar, desktop lasers are usually used as light sources, which have large volume, loose structure, poor stability, high cost, and greatly limit the application scenarios of phased array lidar. On the other hand, in order to expand the longitudinal beam scanning range, desktop lasers with a larger tuning range are usually used, which have the advantage of wavelength tuning range reaching more than 100 nm, expanding the longitudinal beam scanning angle range, but such desktop lasers cannot be hybrid integrated. SUMMARY

[0004] Therefore, the present application provides a hybrid integrated phased array lidar chip to at least partially solve the above problems.

[0005] The hybrid integrated phased array lidar chip provided by the present application comprises: an SOI substrate; a plurality of III-V semiconductor lasers; and a plurality of phased array lidar chips; wherein each phased array lidar chip comprises: a mode spot transformer connected with the III-V semiconductor laser; a beam splitter group connected with the mode spot transformer, used for dividing the input optical signal into a plurality of optical signals; a phase shifter group connected with the beam splitter group, comprising a plurality of sub-phase shifters, each of the plurality of optical signals being connected to a sub-phase shifter; and a grating antenna used for combining the optical signals transmitted by each sub-phase shifter and emitting outward; the plurality of phased array lidar chips and the plurality of III-V semiconductor lasers are arranged on the SOI substrate along a predetermined direction.

[0006] Further, each III-V semiconductor laser is a tunable laser in the same waveband prepared from the same wafer; and each III-V semiconductor laser is integrated on the SOI substrate simultaneously.

[0007] Further, the mode field transformer is bonded to the III-V semiconductor laser.

[0008] Optionally, the bonding includes metal bonding, wafer direct bonding, end face coupling or wire bonding.

[0009] Further, the beam splitter group includes n stages of 1:2 beam splitters for splitting the optical signal transmitted by the mode field transformer into 2 n beams, wherein n is the number of stages of the 1:2 beam splitters.

[0010] Further, each sub-phase shifter includes a heater, and a first electrode and a second electrode.

[0011] Further, the heater is provided with an electric heating material above the corresponding waveguide.

[0012] Optionally, the electric heating material includes TiN, Ti or graphite.

[0013] Optionally, one of the first electrode and the second electrode is a bulk control electrode, and the other is an independent control electrode.

[0014] Further, each grating antenna has a different period-duty cycle, corresponding to a different longitudinal emission angle range.

[0015] Further, the longitudinal emission angle ranges of each grating antenna are sequentially connected, wherein adjacent longitudinal emission angle ranges have an overlapping part.

[0016] Further, the hybrid integrated phased array laser radar chip further includes a SiO2 protective layer covering the mode field transformer, the beam splitter group, the phase shifter group and the grating antenna.

[0017] Based on this, compared with the prior art, the present application has at least the following beneficial effects:

[0018] The hybrid integrated phased array laser radar chip provided by the present application connects multiple lasers to the mode field transformer by bonding, thereby coupling the light into the beam splitter without the need for fiber coupling, greatly reducing the volume of the system and improving the integration and compactness of the system.

[0019] The mixed integrated phased array laser radar chip provided by the application adopts multiple groups of grating antennas with different period-duty cycles to correspond to multiple tunable lasers. The grating antenna is essentially a multiple waveguide grating array. By optimizing the arrangement combination of the period-duty cycle, different longitudinal scanning angle ranges can be generated in the same tunable waveband. By properly superimposing the ranges, the longitudinal scanning range of the beam is greatly expanded, and the same longitudinal scanning angle range as a desktop can be realized with a wavelength tuning range much smaller than that of the desktop.

[0020] The mixed integrated phased array laser radar chip provided by the application adopts multiple III-V semiconductor lasers to provide laser light sources, without using desktop lasers with a large wavelength tuning range. The III-V semiconductor lasers are prepared from the same epitaxial wafer and the same batch, and are integrated on the silicon-based substrate of the phased array, greatly reducing the preparation cost and volume and improving the compactness. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 A three-dimensional structure schematic diagram of the structure of the mixed integrated phased array laser radar chip according to the embodiment of the application is schematically shown;

[0022] Figure 2 A scanning range schematic diagram of four grating antennas with different period-duty cycles according to the embodiment of the application is schematically shown;

[0023] Figure 3 A mode coupling condition schematic diagram of the phased array waveguide and the adjacent waveguide with a 1.25 mu m interval according to the embodiment of the application is schematically shown;

[0024] Figure 4 Four far-field emission image schematic diagrams of the antenna of the phased array with a 1.25 mu m interval according to the embodiment of the application are schematically shown.

[0025]

BRIEF DESCRIPTION OF THE DRAWINGS

[0026] 1, SOI substrate; 2, III-V semiconductor laser; 3, phased array laser radar chip; 31, mode spot transformer; 32, beam splitter group; 33, phase shifter group; 331, sub-phase shifter; 3311, heater; 3312, first electrode; 3313, second electrode; 34, grating antenna. DETAILED DESCRIPTION

[0027] To make the purpose, technical scheme and advantages of the application clearer, the application is further described in detail below with reference to the embodiments and the accompanying drawings.

[0028] In existing phased array lidar systems, on the one hand, desktop lasers are typically used as the light source. These lasers are large, have a loose structure, poor stability, and high cost, which greatly limits the application scenarios of phased array lidar. On the other hand, to expand the longitudinal beam scanning range, desktop lasers with a large tuning range are usually used. Their advantage is that the wavelength tuning range can reach more than 100nm, expanding the longitudinal beam scanning angle range. However, such desktop lasers cannot be hybridized and integrated.

[0029] In view of this, the present invention provides a hybrid integrated phased array lidar chip, which aims to at least partially solve the above-mentioned problems.

[0030] Specifically, such as Figure 1 In the embodiment shown, the hybrid integrated phased array lidar chip includes: an SOI substrate 1; four III-V semiconductor lasers 2 to provide optical signals; and four sets of phased array lidar chips 3, each set of phased array lidar chips 3 being connected to receive an optical signal emitted by a III-V semiconductor laser 2.

[0031] Each set of phased array lidar chips 3 includes: a mode converter 31 connected to a III-V semiconductor laser 2; a beam splitter group 32, whose input end is connected to the mode converter 31, used to split the input optical signal into multiple optical signals for output; a phase shifter group 33 connected to the output end of the beam splitter group 32, the phase shifter group 33 including multiple sub-phase shifters 331, corresponding to the multiple optical signals output by the beam splitter group 32, each of the multiple optical signals is connected to a sub-phase shifter 331; and a grating antenna 34, used to combine the optical signals transmitted by each sub-phase shifter 331 and emit them outward; the above-mentioned multiple sets of phased array lidar chips 3 and multiple III-V semiconductor lasers 2 are connected one-to-one and disposed on the SOI substrate 1 along a preset direction (the horizontal direction shown in the figure).

[0032] Furthermore, in this embodiment of the invention, the four III-V semiconductor lasers 2 are fabricated from the same epitaxial wafer and are III-V tunable semiconductor lasers in the same wavelength band (such as C-band, O-band, L-band or other bands that can be transmitted in silicon waveguides), with a wavelength tuning range of 30nm to 40nm; each III-V semiconductor laser 2 is simultaneously integrated on the SOI substrate 1, thereby greatly reducing the fabrication cost of the hybrid integrated phased array lidar chip.

[0033] Further, in the embodiment of the present application, each group of phased array laser radar chip 3 is connected with a III-V semiconductor laser 2 through its mode field transformer 31, for receiving the light signal emitted by the III-V semiconductor laser 2. Based on this, the light signal emitted by the III-V semiconductor laser 2 is efficiently coupled into the beam splitter group 32 through the mode field transformer 31, without the need for optical fiber coupling, nor the need for large benchtop lasers to provide light signals, greatly reducing the volume of the system, and improving its integration level and compactness.

[0034] Optionally, the above-mentioned bonding connection includes: metal bonding, wafer direct bonding, end face coupling, wire bonding, etc. The mode field transformer 31 can be in various forms, such as taper, anti-taper, or the mode field transformer required for evanescent wave coupling.

[0035] Further, in the embodiment of the present application, the beam splitter group 32 includes 7 levels of 1 / 2 sub-beam splitters, for splitting the light signal transmitted by the mode field transformer 31 into 27 beams (i.e. 128 beams).

[0036] In another embodiment of the present application, the number of levels of the 1 / 2 sub-beam splitter is 8, for splitting the light signal transmitted by the mode field transformer 31 into 256 beams. Similarly, each sub-beam splitter can also be of 1 / 3, 1 / 4, etc. structure. In some embodiments of the present application, the beam splitter group 32 does not use multi-level sub-beam splitters, but uses a fractional beam splitter of one level to complete the light splitting operation of splitting the light signal into multiple beams. It should be noted that the embodiment of the present application is only exemplary and is not intended to limit the specific form of the beam splitter group 32.

[0037] Further, in the embodiment of the present application, the phase shifter group 33 includes 128 sub-phase shifters 331, each of which is connected with a beam of light signal split by the beam splitter group 32, and the light signal generates a phase difference in the sub-phase shifter 331; the sub-phase shifter 331 is an optical-thermal phase shifter, and each sub-phase shifter 331 includes: a heater 3311; and a first electrode 3312 and a second electrode 3313 located at both ends of the heater 3311 along the direction of light signal transmission.

[0038] Further, an electric heating material is provided above the waveguide corresponding to the heater 3311, and the electric heating material includes: TiN, Ti, or graphite, etc. high resistance material. After the first electrode 3312 and the second electrode 3313 are powered, the electric heating material is quickly heated, and then the refractive index of the waveguide is changed, thereby changing the phase of the light signal in the phase shifter group 33.

[0039] Further, in the embodiment of the present application, the first electrode 3312 is a positive electrode controlled independently, and the second electrode 3313 is a negative electrode controlled integrally. The second electrode 3313 controlled integrally is used to connect all 128 sub-phase shifters 331 with a whole metal plate, so as to use the same voltage; and the first electrode 3312 controlled independently is used to extend a metal plate from each sub-phase shifter 331, and there are 128 metal plates in total, and each metal plate can be connected with different voltage.

[0040] It should be noted that the embodiment of the present application does not limit the positive and negative distribution of the first electrode 3312 and the second electrode 3313, and each electrode can be independent. As long as the distribution of the electrode can form a separately controlled potential difference at both ends of each heater 3311, so that the electric heating material arranged above the corresponding waveguide of the heater 3311 can be heated at different degrees under different voltages. One of the first electrode 3312 and the second electrode 3313 adopts an integrally controlled electrode, so as to ensure the convenience of adjusting the potential difference at both ends of each heater 3311, and make the structure of the whole hybrid integrated phased array laser radar chip more compact.

[0041] In an optional embodiment of the present application, in order to obtain the relationship between the size of the phase shift caused by each sub-phase shifter 331 and the voltage, the second electrode 3313 controlled integrally is connected with a power supply, and a constant voltage is used, and in the first electrode 3312 controlled independently, only one sub-phase shifter 331 is tested first, the voltage is increased constantly, and the phase shift value of 0-π corresponding to different voltages is recorded to obtain a lookup table of the relationship between the phase and the voltage, and the same test is performed on all the remaining other sub-phase shifters 331 to verify whether the same lookup table can be obtained.

[0042] Further, in an optional embodiment of the present application, the four groups of grating antennas 34 have different period-duty cycles, corresponding to different longitudinal emission angle ranges. The longitudinal emission angle ranges of the four groups of grating antennas 34 are sequentially connected, and adjacent two longitudinal emission angle ranges have an overlapping part.

[0043] In an optional embodiment of the present application, the four groups of grating antennas correspond to four C-band (or O-band, L-band or other bands that can be transmitted in a silicon waveguide) tunable lasers. The grating antenna is essentially a 128-way waveguide grating array, which has different period-duty cycles. By changing the period-duty cycle, the diffraction order of the grating is changed, and different diffraction orders correspond to different exit angles. Through optimization of arrangement and combination, four groups of continuous longitudinal scanning angle ranges can be generated in the same tunable band, greatly expanding the longitudinal scanning angle range.

[0044] Further, in an optional embodiment of the present application, the hybrid integrated phased array lidar chip further comprises a SiO2 protective layer covering the top of the mode spot transformer 31, the beam splitter group 32, the phase shifter group 33 and the grating antenna 34.

[0045] In an optional embodiment of the present application, each group of phased array lidar chip 3 is bonded to a III-V semiconductor laser 2 through its mode spot transformer 31 for receiving the optical signal emitted by the receiver; the beam splitter group 32 comprises 7 levels of 1 / 2 sub-beam splitters for splitting the optical signal transmitted by the mode spot transformer 31 into 128 beams; correspondingly, the beam splitter group 32 comprises 128 sub-phase shifters 331, each of which is connected to a beam of optical signal split by the beam splitter group 32, and the optical signal generates a phase difference in the sub-phase shifter 331; then, the 128 beams of optical signal enter the same group of grating antennas 34, which emit light. By changing the potential difference between the two ends of the sub-phase shifter 331 (i.e. the voltage applied to the first electrode 3312 and the second electrode 3313), the phase difference of the optical signal in the sub-phase shifter 331 can be changed, thereby changing the lateral scan angle range; by changing the wavelength of the tunable III-V semiconductor laser 2, the longitudinal scan angle range can be adjusted; but because the longitudinal scan angle range is too narrow, four groups of phased arrays are designed, the laser wavelength range of each group of phased array is the same, but the exit grating of the antenna is different (with different periods-duties), so the longitudinal emission angle range of each grating is different, by adjusting the selection of the period-duty, the longitudinal scan angle range of the four groups of antennas is sequentially connected, greatly improving the longitudinal scan angle range.

[0046] As Figure 2 shown is a scanning range diagram using four grating antennas with different periods-duties according to an embodiment of the present application. In the figure, (a) is a grating antenna with a period of 475nm and a duty of 60%, (b) is a grating antenna with a period of 500nm and a duty of 30%, (c) is a grating antenna with a period of 510nm and a duty of 30%, and (d) is a grating antenna with a period of 500nm and a duty of 70%. As can be seen from the figure, the four groups of grating antennas with different periods-duties have their respective longitudinal scan angle ranges sequentially connected, and the two adjacent longitudinal emission angle ranges have overlapping parts. Thus, the longitudinal scan angle range of the beam of the hybrid integrated phased array lidar chip can be greatly expanded.

[0047] The information in Figure 2 is sorted to obtain the specific information table of the four grating antennas with different periods-duties. As shown in Table 1 below:

[0048] Table 1 Specific information table of grating antenna

[0049]

[0050] From the above table, it can be seen that the longitudinal scanning angle ranges of the four groups of grating antennas under the wavelength tuning range of 1535nm-1565nm (i.e. a wavelength tuning range of 30nm) are respectively:

[0051] Grating antenna a: -34.5805°-29.5705°, scanning angle range is 5.01°;

[0052] Grating antenna b: -29.7024°-24.7979°, scanning angle range is 4.9045°;

[0053] Grating antenna c: -25.6857°-21.0609°, scanning angle range is 4.6248°;

[0054] Grating antenna b: -21.9238°-17.4155°, scanning angle range is 4.6248°.

[0055] It can be seen that a single-chip semiconductor laser with a wavelength tuning range of 30nm can usually only generate a scanning angle range of 4°-5° in the longitudinal direction. However, by using several groups of grating antennas with different period-duty ratios, the scanning angle ranges of the grating antennas are sequentially and superimposed in the longitudinal direction in the embodiments of the present application. The longitudinal scanning angle ranges of the four groups of grating antennas are superimposed to be -34.5805°-17.4155°, and the total scanning angle range reaches 17.165°. It can be seen that, in the case of inputting a small wavelength range optical signal to the laser, by using several groups of grating antennas with different period-duty ratios, the hybrid integrated phased array laser radar chip provided by the present application can also realize a large longitudinal scanning angle range under the condition of inputting an optical signal to a semiconductor laser with a small tuning range.

[0056] Based on this, the embodiments of the present application do not need to use a benchtop laser with a large tuning range to provide an optical signal, but use a plurality of III-V semiconductor lasers with a tuning range only in a same small wavelength band, to realize the same longitudinal scanning angle as the benchtop laser, which is much smaller than the wavelength tuning range required by the benchtop laser.

[0057] In addition, in an ideal case, the longitudinal scanning angle ranges of the groups of grating antennas are sequentially and successively connected, the overlapping part tends to be zero, and the most efficient superposition of the longitudinal scanning angle range can be realized. From the above table, it can be seen that there is a part of the longitudinal scanning angle ranges of the four groups of grating antennas overlapping, and the angle overlap rate is:

[0058]

[0059] Wherein, F represents the angle overlap rate, A represents the sum of the scanning angle ranges of each grating antenna, and θ represents the total scanning angle range after the scanning angle ranges of each grating antenna are superimposed.

[0060] That is, the total scanning angle range after the scanning angle ranges of the four groups of grating antennas shown in the above table are superimposed is less than the sum of the scanning angle ranges of each grating antenna. This is because there must be process errors in actual production and processing, and it is impossible to achieve completely accurate process. Therefore, a fault tolerance rate must be left for process errors to prevent the phenomenon that the angles of different gratings cannot be continuous. The higher the angle overlap rate is, the more the angles of the two adjacent antennas in the longitudinal scanning angle range overlap, and the greater the fault tolerance rate is. The overlap rate of about 10% reduces the extremely high requirement on the process, and can ensure the continuity of the scanning angle range of each grating antenna, and the effect after the longitudinal scanning angle ranges of the multiple groups of grating antennas are superimposed is also relatively ideal.

[0061] As shown in Figure 3 Fig. 1 is a schematic diagram of mode coupling of 1.25 μm interval phased array waveguides and adjacent waveguides according to an embodiment of the present application. Only a single channel (sub-phase shifter) split by a beam splitter is lighted, and it can be seen that there is only a certain evanescent wave coupling between adjacent sub-phase shifters. Further, by extracting the simulation data in the figure, the relative light intensity at the sub-phase shifter which is lighted is 1.96961, and the relative light intensity of the adjacent sub-phase shifter is 0.156251, and the crosstalk coupling between adjacent sub-phase shifters can be calculated as:

[0062]

[0063] That is, the waveguides corresponding to each sub-phase shifter of the embodiment of the present application will not interfere with each other.

[0064] Figure 4 Fig. 1 is a schematic diagram of four far-field emission images of 1.25 μm interval phased array antennas according to an embodiment of the present application. Specifically, 0° phase difference, 90° phase difference, 150° phase difference and 180° phase difference of 1550 nm waveband light are respectively input into each silicon waveguide of the 1.25 μm waveguide interval phased array laser radar chip.

[0065] Wherein, Figure 4 (a) is a far-field emission image with 0° phase difference, and it can be seen from the figure that there is no side mode in the field of view; Figure 4 (b) is a far-field emission image with 90° phase difference, and it can be seen from the figure that the main mode moves by 18°, and the side mode still does not appear in the field of view; Figure 4 (c) is a far-field emission image after 150° phase difference is added, and it can be seen from the figure that the main mode moves by 31°, and the side mode just appears at the rightmost side of the field of view;Figure 4 (d) for the far-field emission image after adding the equal phase difference of 180°, the main mode moves 38°, the main mode and the side mode become equal in intensity and axisymmetric. Thus, a phased array with a 1.25 μm waveguide interval can obtain a beam scanning range of up to ± 38° in the lateral field of view, that is, in the hybrid integrated phased array laser radar chip provided by the application, by changing the voltage applied to the two ends of each sub-phase shifter, the lateral scanning angle range of up to ± 38° can be adjusted.

[0066] In summary, the hybrid integrated phased array laser radar chip provided by the application is prepared from the same wafer and the same batch of III-V semiconductor lasers with a wavelength tuning range of only 30 nm to 40 nm, and is integrated on a silicon-based substrate of the phased array, so as to realize the same longitudinal scanning angle as a desktop computer with a wavelength tuning range much smaller than that of the desktop computer. Based on this, the hybrid integrated phased array laser radar chip does not need a large desktop laser to provide an optical signal, and realizes high integration and small equipment volume of the phased array laser radar chip, low preparation cost, and realization of a large longitudinal scanning angle with a small tuning range.

[0067] Based on the above disclosure, the hybrid integrated phased array laser radar chip provided by the application couples the optical signal into the phased array laser radar chip by bonding the spot transformer, without the need for optical fiber coupling, thereby improving the compactness of the hybrid integrated phased array laser radar chip.

[0068] In addition, the application can easily adjust the lateral scanning angle range by adjusting the voltage applied to the two ends of each sub-phase shifter.

[0069] In addition, by optimizing the selection of the period-duty ratio of the multiple sets of grating antennas, the longitudinal scanning angle range of the multiple sets of antennas can be sequentially connected, thereby greatly improving the longitudinal scanning angle range.

[0070] The above specific embodiments further illustrate the purpose, technical solutions and beneficial effects of the application, and it should be understood that the above description is only for specific embodiments of the application and is not intended to limit the application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the application shall be included in the protection scope of the application.

Claims

1. A hybrid integrated phased array lidar chip, characterized in that, include: SOI substrate (1); Multiple III-V semiconductor lasers (2); as well as, Multiple phased array lidar chips (3); Each of the phased array lidar chips (3) includes: A mode converter (31) is connected to the III-V semiconductor laser (2); The beam splitter group (32) is connected to the mode converter (31) and is used to split the input optical signal into multiple optical signals; A phase shifter group (33), connected to the beam splitter group (32), includes multiple sub-phase shifters (331), each of the multiple optical signals being connected to one of the sub-phase shifters (331); and, A grating antenna (34) is used to combine the optical signals transmitted by each of the sub-phase shifters (331) and transmit them outward; The multiple sets of phased array lidar chips (3) and the multiple III-V group semiconductor lasers (2) are disposed on the SOI substrate (1) along a preset direction; Each of the III-V semiconductor lasers (2) is a tunable laser in the same wavelength band, prepared from the same epitaxial wafer; each of the III-V semiconductor lasers (2) is simultaneously integrated on the SOI substrate (1); Each of the grating antennas (34) has a different period-duty cycle, corresponding to different longitudinal emission angle ranges; the longitudinal emission angle ranges of each of the grating antennas (34) are connected in sequence, and adjacent longitudinal emission angle ranges have overlapping portions.

2. The hybrid integrated phased array lidar chip according to claim 1, characterized in that, The mode converter (31) is bonded to the III-V semiconductor laser (2), and the bonding connection includes: metal bonding, wafer direct bonding, end face coupling or wire bonding.

3. The hybrid integrated phased array lidar chip according to claim 1, characterized in that, The beam splitter group (32) includes n-stage 1-to-2 sub-beam splitters for splitting the optical signal transmitted from the mode converter (31) into 2 sub-beam splitters. n The bundle is defined as n, where n is the number of stages of the 1-to-2 sub-bundle splitter.

4. The hybrid integrated phased array lidar chip according to claim 1, characterized in that, Each of the sub-phase shifters (331) includes: Heater (3311); and, The first electrode (3312) and the second electrode (3313) are located at both ends of the heater (3311) along the direction of optical signal transmission.

5. The hybrid integrated phased array lidar chip according to claim 4, characterized in that, An electric heating material is disposed above the waveguide corresponding to the heater (3311), and the electric heating material includes TiN, Ti or graphite.

6. The hybrid integrated phased array lidar chip according to claim 4, characterized in that, One of the first electrode (3312) and the second electrode (3313) is an integral control electrode, and the other is an independent control electrode.

7. The hybrid integrated phased array lidar chip according to claim 1, characterized in that, The hybrid integrated phased array lidar chip also includes: A SiO2 protective layer covers the top of the mode converter (31), the beam splitter group (32), the phase shifter group (33), and the grating antenna (34).

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