Substrate processing apparatus and method

Abstract

The present invention provides a substrate processing apparatus capable of effectively removing contaminant substances from an edge region of a substrate. The substrate processing apparatus includes a support stage that rotates a substrate; a first tank disposed around the support stage, storing a cleaning liquid and having a first opening portion formed on an upper surface; and a first ultrasonic oscillator disposed in the first tank and providing ultrasonic waves toward a surface of the cleaning liquid exposed by the first opening portion to form a first water film protruding from the surface of the cleaning liquid, the substrate not being immersed in the first tank, the edge region of the substrate being cleaned by the protruding first water film during rotation of the substrate by the support stage.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and method. Background Technology

[0002] When manufacturing semiconductor devices or display devices, various processes are performed, including photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning. The photolithography process includes coating, exposure, and development. A photoresist (photoresist solution) is coated onto the substrate (i.e., the coating process), circuit patterns are exposed onto the substrate with the photoresist film (i.e., the exposure process), and the exposed areas of the substrate are selectively developed (i.e., the development process). Summary of the Invention

[0003] The problem that the invention aims to solve

[0004] On the other hand, contaminants may adhere to the edge areas of the substrate (especially the apex). Such contaminants may migrate onto the substrate during the application and baking of the photoresist. This migration of contaminants onto the substrate can cause defects during the exposure process.

[0005] The problem to be solved by the present invention is to provide a substrate processing apparatus that can effectively remove contaminants from edge areas.

[0006] The problem to be solved by the present invention is to provide a substrate processing method that can effectively remove contaminants from edge areas.

[0007] The subject matter of this invention is not limited to the subject matter mentioned above, and those skilled in the art can clearly understand other subject matters not mentioned based on the following description.

[0008] Solution to the problem

[0009] One aspect of the substrate processing apparatus of the present invention for achieving the above-mentioned objectives includes: a support stage for rotating a substrate; a first bath disposed around the support stage, storing a cleaning liquid and having a first opening formed on its upper surface; and a first ultrasonic oscillator disposed in the first bath and providing ultrasonic waves toward the surface of the cleaning liquid exposed through the first opening to form a first water film protruding from the surface of the cleaning liquid, wherein the substrate is not immersed in the first bath, and the edge region of the substrate is cleaned by the protruding first water film during the rotation of the support stage by the substrate.

[0010] Another aspect of the substrate processing apparatus of the present invention for achieving the above-mentioned objectives includes: a support stage for rotating a substrate; a first tank disposed around the support stage, storing a first cleaning liquid and having a first opening formed on its upper surface; a first ultrasonic oscillator disposed on the bottom surface of the first tank and providing ultrasonic waves toward the surface of the first cleaning liquid exposed through the first opening to form a first water film protruding from the surface of the first cleaning liquid; a first nozzle disposed at the upper part of the first tank and inclined toward an edge region of the substrate, spraying cleaning gas toward the upper surface of the edge region of the substrate; and a second tank disposed around the support stage and spaced apart from the first tank. The system comprises: an open-type tank for storing a second cleaning solution and having a second opening on its upper surface; a second ultrasonic oscillator disposed on the bottom surface of the second tank and providing ultrasonic waves toward the surface of the second cleaning solution exposed through the second opening to form a second water film protruding from the surface of the second cleaning solution; and a second nozzle configured at the upper part of the second tank to be inclined toward the edge region of the substrate and spraying cleaning gas toward the upper surface of the edge region of the substrate, wherein the substrate is not immersed in the first tank and the second tank, and the edge region of the substrate is cleaned by the protruding first water film and the protruding second water film during the rotation of the substrate by the support platform.

[0011] One aspect of the substrate processing method of the present invention for achieving the other aforementioned objective includes: providing a substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a support stage located within the chamber; a first tank disposed around the support stage and storing a cleaning liquid; a first ultrasonic oscillator disposed in the first tank; the support stage for positioning the substrate within the chamber; applying a photoresist onto the substrate while rotating the substrate via the support stage; and while rotating the substrate via the support stage, providing ultrasonic waves from the first ultrasonic oscillator toward the surface of the cleaning liquid stored in the first tank to form a first water film protruding from the surface of the cleaning liquid, thereby cleaning an edge region of the substrate through the protruding first water film. Attached Figure Description

[0012] Figure 1 This is a conceptual diagram illustrating a substrate processing apparatus according to a first embodiment of the present invention.

[0013] Figure 2 This shows the substrate located at Figure 1 A conceptual diagram of a substrate processing device.

[0014] Figure 3 It is along Figure 2 A cross-sectional view of the AA cut.

[0015] Figure 4This is a conceptual diagram illustrating a substrate processing apparatus according to a second embodiment of the present invention.

[0016] Figure 5 This is a conceptual diagram illustrating a substrate processing apparatus according to a third embodiment of the present invention.

[0017] Figure 6 It is used for explanation Figure 5 The diagram shows the relationship between the position of the inlet / outlet of the first slot and the substrate.

[0018] Figure 7 This is a conceptual diagram illustrating a substrate processing apparatus according to a fourth embodiment of the present invention.

[0019] Figure 8 This is a flowchart illustrating a substrate processing method according to some embodiments of the present invention.

[0020] Figures 9 to 11 This is a conceptual diagram illustrating a substrate processing apparatus according to a fifth embodiment of the present invention. Detailed Implementation

[0021] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The advantages, features, and methods of achieving the present invention will become clear from the accompanying drawings and the detailed embodiments described below. However, the present invention is not limited to the embodiments disclosed below and can be implemented in various ways different from each other. These embodiments are provided merely to fully disclose the invention and to fully inform those skilled in the art of its scope, which is defined only by the scope of the claims. Throughout this specification, the same reference numerals refer to the same constituent elements.

[0022] Terms such as "below," "below," "lower," "above," and "upper," used as spatially relative terms, can be used to more easily describe the relationship between one element or component shown in a figure and other elements or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the figure, terms indicating the different orientations of elements during use or operation. For example, if the elements shown in the figure are flipped, an element described as "below" or "below" of another element can be placed "above" of another element. Therefore, the exemplary term "below" can include both "below" and "above." Elements can also be oriented in other directions, thereby allowing the spatially relative terms to be interpreted according to the orientation direction.

[0023] It should be understood that although the terms first, second, etc., are used herein to describe various elements, constituent elements, and / or parts, these elements, constituent elements, and / or parts are of course not limited by these terms. These terms are only used to distinguish one element, constituent element, or part from another element, constituent element, or part. Therefore, it is natural that the first element, first constituent element, or first part mentioned below can also be a second element, second constituent element, or second part within the technical concept of the present invention.

[0024] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing the invention with reference to the accompanying drawings, the same or corresponding constituent elements will be given the same reference numerals, and repeated descriptions thereof will be omitted.

[0025] Figure 1 This is a conceptual diagram illustrating a substrate processing apparatus according to a first embodiment of the present invention. Figure 2 This shows the substrate located at Figure 1 A conceptual diagram of a substrate processing device. Figure 3 It is along Figure 2 A cross-sectional view of the AA cut.

[0026] First, refer to Figure 1 as well as Figure 2 The substrate processing apparatus according to the first embodiment of the present invention includes a base 15, a first groove 100, a second groove 200, and a support platform 10.

[0027] The support platform 10 is disposed in the central region of the base 15. The support platform 10 supports the substrate W and allows the substrate W to rotate (refer to reference numeral 11 in the figure).

[0028] The first tank 100 is arranged around the support platform 10 and stores cleaning fluid.

[0029] The second tank 200 is disposed around the support platform 10 and stores cleaning fluid. As shown in the figure, the second tank 200 can be configured in a position symmetrical about the support platform 10 (i.e., about the rotation axis of the support platform 10), but is not limited thereto.

[0030] Among them, reference Figure 3 A first opening 100a is formed on the upper surface of the first groove 100.

[0031] A first ultrasonic oscillator 120 is disposed in the first tank 100 and provides ultrasonic waves toward the surface 130 of the cleaning liquid exposed by the first opening 100a to form a first water film 131 protruding from the surface 130 of the cleaning liquid.

[0032] In the accompanying drawings, although the first ultrasonic oscillator 120 is shown immersed in the cleaning fluid on the bottom surface 100b of the first tank 100, this is not a limitation. For example, if the bottom surface 100b is made of a material through which ultrasonic waves can pass, the first ultrasonic oscillator 120 may also be positioned below the bottom surface 100b without being immersed in the cleaning fluid.

[0033] The height HO of the protruding first water film 131 can be adjusted by regulating the oscillation output of the first ultrasonic oscillator 120. Furthermore, the height HO of the protruding first water film 131 may vary depending on the viscosity and temperature of the cleaning solution. Therefore, it is necessary to control the oscillation output, viscosity, and temperature to ensure that the height HO of the protruding first water film 131 matches the target height. In the substrate processing apparatus according to the first embodiment of the present invention, the height HO of the protruding first water film 131 may, for example, be approximately 5 mm to 15 mm from the surface 130 of the cleaning solution, but is not limited thereto.

[0034] The target substance to be cleaned can be changed by adjusting the oscillation frequency of the first ultrasonic oscillator 120.

[0035] For example, oscillation frequencies can be classified as ultrasonic and megasonic.

[0036] Ultrasonic waves can range from tens to hundreds of kHz, for example, from 20 kHz to 400 kHz. Ultrasonic waves can perform cleaning using cavitation. When ultrasonic waves are applied to a cleaning fluid, bubbles in the fluid burst, breaking down or isolating foreign matter from the object being cleaned.

[0037] Megohms can range from a few MHz, for example, from 700 kHz to 1.2 MHz. Megohms can be used to remove foreign objects of sub-micron size. Unlike ultrasound, megohms do not produce cavitation; instead, they increase particle acceleration, thereby stripping away foreign objects from the object being cleaned.

[0038] Ultrasound can remove relatively large foreign objects (e.g., a few μm), while megason can remove relatively small foreign objects (e.g., less than 1 μm).

[0039] The first ultrasonic oscillator 120 takes into account the size of the target material and generates ultrasonic waves with an oscillation frequency within a suitable range.

[0040] The substrate W is positioned such that it is not submerged in the first tank 100 and the edge region ER of the substrate W is adjacent to the first opening 100a. The edge region ER of the substrate W can be cleaned by a first water film 131 protruding from the first ultrasonic oscillator 120.

[0041] Specifically, the edge region ER of the substrate W includes a bottom bevel E1 and an upper bevel E2. The bottom bevel E1 extends from the lower surface of the substrate W to the top of the substrate, and the upper bevel E2 extends from the upper surface of the substrate W to the top of the substrate.

[0042] Since the first water film 131 protrudes upward from the bottom of the substrate W, it can clean the bottom slope E1. Furthermore, due to the stress of the first water film 131, the first water film 131 comes into contact with the upper slope E2, which can also clean the upper slope E2.

[0043] Although there is no separate illustration, in the second slot ( Figure 1 A second ultrasonic oscillator is also installed inside the second tank 200. The structure, control method, and utilization of the second tank 200 and the second ultrasonic oscillator are described. Figure 3 The structure and control method of the first tank 100 and the first ultrasonic oscillator 120 described are substantially the same. That is, the second ultrasonic oscillator provides ultrasonic waves toward the surface of the cleaning liquid exposed by the second opening of the second tank 200 to form a second water film protruding from the surface of the cleaning liquid.

[0044] The cleaning solution stored in the first tank 100 and the cleaning solution stored in the second tank 200 can be different substances. For example, the cleaning solution in the first tank 100 can be DIW, and the cleaning solution in the second tank 200 can be IPA. In this way, the first water film 131 generated in the first tank 100 and the second water film generated in the second tank 200 can be cleaned with different substances.

[0045] Alternatively, the oscillation output of the first ultrasonic oscillator 120 used to form the first water film 131 and the oscillation output of the second ultrasonic oscillator used to form the second water film can be different from each other. This allows the heights of the first water film 131 and the second water film to be controlled to be different. Thus, the first water film 131 formed in the first tank 100 and the second water film formed in the second tank 200 can target and clean contaminants located at different heights.

[0046] On the other hand, although Figure 1 and Figure 2 The diagram shows that the first groove 100, the second groove 200, and the support platform 10 are all formed on a base 15, but this is not the only possibility. For example, the first groove 100, the second groove 200, and the support platform 10 may also be configured on different bases.

[0047] Furthermore, although the use of two slots (100 and 200) was described, it is not limited to this. Three or more slots can also be used, or only one slot can be used.

[0048] In addition, Figure 1 In the diagram, the first groove 100 and the second groove 200 are shown in a dot type (i.e., a point located on the base 15), but are not limited thereto. For example, the first groove 100 or the second groove 200 is formed along an arc of the base 15.

[0049] Figure 4 This is a conceptual diagram illustrating a substrate processing apparatus according to a second embodiment of the present invention. For ease of explanation, and in conjunction with... Figures 1 to 3 The explanation will focus on the differences between the previously explained content.

[0050] refer to Figure 4 The substrate processing apparatus according to a second embodiment of the present invention further includes a first nozzle 290 for injecting cleaning gas onto the upper surface of the edge region ER of the substrate W. The cleaning gas may be, for example, an inert gas (N2, He, etc.). The first nozzle 290 is connected to a cleaning gas storage unit 291. Depending on the opening / closing of the valve 299, the cleaning gas is supplied to the upper surface of the edge region of the substrate W through the first nozzle 290. As shown, since the first nozzle 290 is inclined toward the edge region of the substrate W, the cleaning gas injected from the first nozzle 290 pushes contaminants out of the substrate W.

[0051] Multiple first nozzles 290 for spraying cleaning gas can be provided along the edge region of the substrate W. For example... Figure 4 As shown, the first nozzle 290 can be disposed on the upper part of the first tank 100. Alternatively, a nozzle for spraying cleaning gas can be disposed on the upper part of the second tank 200.

[0052] The location of the first nozzle 290 can also be far from the location of the first groove 100. For example, although not shown separately, the first groove 100 and the second groove 200 can be located on the base (see reference). Figure 1 The two nozzles can be located at the 3 o'clock and 9 o'clock positions of the base 15, at the 6 o'clock and 12 o'clock positions respectively.

[0053] Figure 5 This is a conceptual diagram illustrating a substrate processing apparatus according to a third embodiment of the present invention. Figure 6 It is used for explanation Figure 5 The diagram shows the relationship between the position of the inlet / outlet of the first slot and the substrate.

[0054] First refer to Figure 5 The first tank 110 includes a supply port 108 for supplying cleaning fluid and a discharge port 109 for discharging cleaning fluid.

[0055] The supply port 108 is connected to the cleaning fluid supply unit. Although not specifically illustrated, the cleaning fluid supply unit may include a storage tank 191 for storing cleaning fluid, a pump for supplying cleaning fluid from the storage tank 191, and / or a valve 192 for adjusting the amount of cleaning fluid, etc.

[0056] The outlet 109 can be connected to a storage tank for storing the discharged cleaning fluid and / or a recycler for recovering the discharged cleaning fluid.

[0057] During the rotation of the substrate W (i.e., during the cleaning of the substrate W), cleaning fluid is continuously supplied through the supply port 108. Thus, even through the protruding first water film (refer to...), cleaning fluid is continuously supplied. Figure 3 131) Contaminants detached from the substrate W landed on the surface of the cleaning solution (reference). Figure 3 (130) The aforementioned foreign matter can also be discharged through the discharge port 109 without re-attaching to one side of the substrate W.

[0058] On the other hand, the supply port 108 can be set on the side wall of the first groove 100, and the discharge port 109 can be set on the bottom surface of the first groove 100.

[0059] Among them, reference Figure 6 The first tank 100 includes a first region 100L overlapping with the substrate W and a second region 100R not overlapping with the substrate W. The supply port 108 may be located on the sidewall of the first region 100L, and the discharge port 109 may be located on the bottom surface of the second region 100R. Therefore, within the first tank 100, the flow of the cleaning fluid is shaped to move from the region overlapping with the substrate W to the region not overlapping with the substrate W (i.e., from the first region 100L to the second region 100R). On the other hand, since the substrate W rotates during cleaning, the protruding first water film 131 (i.e., cleaning fluid) collides with the substrate (W) and splashes outwards from the substrate W. In other words, the flow of the cleaning fluid within the first tank 100 can be optimized without hindering the movement of the cleaning fluid splashing outwards. Thus, contaminants can be discharged without remaining in the first tank 100.

[0060] Figure 7 This is a conceptual diagram illustrating a substrate processing apparatus according to a fourth embodiment of the present invention. It more specifically demonstrates the use of... Figures 1 to 6 An example of a substrate processing apparatus is described.

[0061] refer to Figure 7 The substrate processing apparatus according to the fourth embodiment of the present invention includes a support stage 10, a first groove 100, a second groove 200, a bowl-shaped piece (or cleaning cup) 199, a first nozzle 290, a second nozzle 292, etc.

[0062] Inside the chamber CB, there is a support platform 10 that allows the substrate W to rotate.

[0063] A first tank 100 is disposed around the support platform 10, stores a first cleaning fluid, and has a first opening formed on its upper surface. A first ultrasonic oscillator is disposed on the bottom surface of the first tank 100. The first ultrasonic oscillator provides ultrasonic waves toward the surface of the first cleaning fluid exposed through the first opening of the first tank 100 to form a first water film 131 protruding from the surface of the first cleaning fluid.

[0064] A second tank 200 is disposed around the support platform 10 and is configured to be spaced apart from the first tank 100. The second tank 200 stores a second cleaning fluid and has a second opening formed on its upper surface. A second ultrasonic oscillator is disposed on the bottom surface of the second tank 200. The second ultrasonic oscillator provides ultrasonic waves toward the surface of the second cleaning fluid exposed through the second opening of the second tank 200 to form a second water film 132 protruding from the surface of the second cleaning fluid.

[0065] The first tank 100 and the second tank 200 can be configured symmetrically about the rotation axis of the support platform 10. The cleaning solution stored in the first tank 100 and the cleaning solution stored in the second tank 200 can be different substances. In addition, the oscillation output of the first ultrasonic oscillator used to form the first water film 131 and the oscillation output of the second ultrasonic oscillator used to form the second water film 132 can be different from each other.

[0066] The first nozzle 290 is inclined towards the edge region of the substrate W at the upper part of the first groove 100 and sprays cleaning gas onto the upper surface of the edge region of the substrate W.

[0067] The second nozzle 292 is inclined toward the edge region of the substrate W at the upper part of the second groove 200 and sprays cleaning gas onto the upper surface of the edge region of the substrate W.

[0068] The first nozzle 290 and the second nozzle 292 are connected to the cleaning gas storage unit 291.

[0069] A third nozzle 170 for applying photoresist to the substrate W is disposed on the upper surface of the substrate W. The third nozzle 170 is connected to the photoresist supply unit 171.

[0070] The bowl-shaped component 199 is formed around the support platform 10.

[0071] Drainage holes 161 and 162 can be provided on the bottom surface of the chamber CB. Drainage hole 161 is provided on the outer side of the bowl-shaped member 199, and drainage hole 162 is provided on the inner side of the bowl-shaped member 199.

[0072] During the cleaning process, the feed inlets of the first tank 100 and the second tank 200 (see reference) Figure 5(108) continuously supplies cleaning fluid, and through the discharge port (reference) Figure 5 The cleaning fluid discharged in this way can be discharged through drain hole 162.

[0073] During the cleaning process, the substrate W rotates, and the protruding first water film 131 and second water film 132 (i.e., cleaning liquid) collide with the substrate W and splash outwards. Thus, the cleaning liquid splashed outwards can flow along the outer surface of the bowl-shaped member 199 and be discharged to the drain hole 161.

[0074] Figure 8 This is a flowchart illustrating a substrate processing method according to some embodiments of the present invention.

[0075] refer to Figure 7 as well as Figure 8 A substrate processing apparatus (S10) is provided.

[0076] Next, the substrate W is positioned on the support stage 10 inside the cavity CB (S20).

[0077] Next, while rotating the substrate W via the support platform 10, photoresist is applied to the substrate W (S30).

[0078] Next, the first and second ultrasonic oscillators provide ultrasonic waves toward the surface of the cleaning liquid to form first and second water films 131, 132 protruding from the surface of the cleaning liquid, and the edge region of the substrate W is cleaned by the protruding first and second water films 131, 132 (S40).

[0079] During the cleaning of the edge region of the substrate W by the protruding first and second water films 131 and 132, the first and second nozzles 290 and 292 spray cleaning gas onto the upper surface of the edge region of the substrate W.

[0080] Figures 9 to 11 This is a conceptual diagram illustrating a substrate processing apparatus according to a fifth embodiment of the present invention.

[0081] refer to Figures 9 to 11 The substrate processing apparatus 1 includes an index module 20, a processing module 30, and an interface module 40. For example, the index module 20, the processing module 30, and the interface module 40 are arranged in a row. Hereinafter, the direction in which the index module 20, the processing module 30, and the interface module 40 are arranged will be referred to as the X-axis direction (X), the direction perpendicular to the X-axis direction (X) when viewed from above will be referred to as the Y-axis direction (Y), and the direction perpendicular to both the X-axis direction (X) and the Y-axis direction (Y) will be referred to as the Z-axis direction (Z).

[0082] The transposition module 20 transfers the substrate W from the container 9 containing the substrate W to the processing module 30, and stores the processed substrate W back into the container 9. The length direction of the transposition module 20 is provided as the Y-axis direction (Y). The transposition module 20 has a loading port 22 and a transposition frame 24. With the transposition frame 24 as a reference, the loading port 22 is located on the opposite side of the processing module 30. The container 9 containing the substrate W is placed in the loading port 22. Multiple loading ports 22 can be provided, and the multiple loading ports 22 can be arranged along the Y-axis direction (Y).

[0083] As container 9, a sealed container 9 such as a front-open unified pod (FOUP) can be used. Container 9 can be placed at loading port 22 by a transport unit (not shown) such as an overhead transfer vehicle, overhead conveyor, or automated guided vehicle (AGV), or by an operator.

[0084] A transfer robot 2200 is provided inside the transfer frame 24. This can be achieved by providing a guide rail 2300 with its length direction oriented in the Y-axis direction (Y) within the transfer frame 24, and providing a transfer robot 2200 capable of moving on the guide rail 2300. The transfer robot 2200 can be provided as including a manipulator 2220 for placing the substrate W, the manipulator 2220 being capable of moving forward and backward, and capable of rotating about the Z-axis direction (Z) and moving along the Z-axis direction (Z).

[0085] Processing module 30 performs coating and developing processes on substrate W. Processing module 30 has coating blocks 30a and developing blocks 30b. Coating blocks 30a perform the coating process on substrate W, and developing blocks 30b perform the developing process on substrate W. Multiple coating blocks 30a are provided, and they are provided stacked on top of each other. Multiple developing blocks 30b are provided, and the developing blocks 30b are provided stacked on top of each other. For example, two coating blocks 30a and two developing blocks 30b are provided. Figure 9 As shown, the coating block 30a can be disposed below the developing block 30b. According to one example, the two coating blocks 30a can perform the same process on each other and are provided with the same structure. Similarly, the two developing blocks 30a can perform the same process on each other and are provided with the same structure.

[0086] Among them, reference Figure 11The coating block 30a includes a heat treatment chamber 3200, a transfer chamber 3400, a liquid treatment chamber 3600, and a buffer chamber 3800. The heat treatment chamber 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid treatment chamber 3600 supplies a processing liquid onto the substrate W to form a liquid film. The liquid film may be a photoresist film or an anti-reflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid treatment chamber within the coating block 30a.

[0087] The transfer chamber 3400 is provided such that its length direction is parallel to the X-axis direction (X). A transfer unit 3420 is provided in the transfer chamber 3400. The transfer unit 3420 transfers substrates between the heat treatment chamber 3200, the liquid treatment chamber 3600, and the buffer chamber 3800. According to one example, the transfer unit 3420 may have a robotic arm HD for placing the substrate W, and the robotic arm HD is provided to be able to move forward and backward, and to rotate about and move along the Z-axis direction (Z). Alternatively, a guide rail 3300 with its length direction parallel to the X-axis direction (X) may be provided within the transfer chamber 3400, and the transfer unit 3420 may be provided to move on the guide rail 3300.

[0088] Multiple buffer chambers 3800 are provided. A portion of the buffer chambers 3800 can be configured between the transfer module 20 and the transfer chamber 3400. These buffer chambers are hereinafter referred to as front buffers 3802. Multiple front buffers 3802 are provided and configured to be stacked vertically. Another portion of the buffer chambers 3802 and 3804 can be configured between the transfer chamber 3400 and the interface module 40. These buffer chambers are hereinafter referred to as rear buffers 3804. Multiple rear buffers 3804 are provided and configured to be stacked vertically. The front buffers 3802 and rear buffers 3804 temporarily store multiple substrates W. The substrates W stored in the front buffers 3802 are moved in or out by the transfer robot 2200 and the transfer robot 3420. The substrates W stored in the rear buffers 3804 are moved in or out by the transfer robot 3420 and the first robot 4602.

[0089] The developing block 30b has a heat treatment chamber 3200, a transport chamber 3400, and a liquid treatment chamber 3600. Since the heat treatment chamber 3200, transport chamber 3400, and liquid treatment chamber 3600 of the developing block 30b are provided with a structure and configuration that are generally similar to those of the heat treatment chamber 3200, transport chamber 3400, and liquid treatment chamber 3600 of the coating block 30b, their description is omitted.

[0090] The interface module 40 connects the processing module 30 to an external exposure device 50. The interface module 40 has an interface frame 4100, an additional process chamber 4200, an interface buffer 4400, and a transport member 4600.

[0091] A fan filter unit that forms a downward airflow inside can be provided at the upper end of the interface frame 4100. An additional process chamber 4200, an interface buffer 4400, and a transport member 4600 are disposed inside the interface frame 4100. The additional process chamber 4200 can perform predetermined additional processes before the substrate W, after processing in the coating block 30a, is transported to the exposure apparatus 50. Optionally, the additional process chamber 4200 can perform predetermined additional processes before the substrate W, after processing in the exposure apparatus 50, is transported to the developing block 30b. According to one example, the additional process can be an edge exposure process that exposes the edge region of the substrate W, an upper surface cleaning process that cleans the upper surface of the substrate W, or a lower surface cleaning process that cleans the lower surface of the substrate W. Multiple additional process chambers 4200 can be provided and provided stacked on top of each other. The additional process chambers 4200 are provided to all perform the same process. Optionally, some of the additional process chambers 4200 can be provided to perform different processes.

[0092] Interface buffer 4400 provides space for the substrate W to temporarily stop during transport between coating block 30a, additional process chamber 4200, exposure apparatus 50 and developing block 30b. Multiple interface buffers 4400 may be provided, and the interface buffers 4400 may be provided stacked on top of each other.

[0093] According to one example, based on the extension line of the transport chamber 3400 in the length direction, an additional process chamber 4200 is arranged on one side and an interface buffer 4400 is arranged on the other side.

[0094] The conveyor 4600 transports substrate W between coating block 30a, additional process chamber 4200, exposure apparatus 50, and developing block 30b. The conveyor 4600 can be provided as one or more robots. According to one example, the conveyor 4600 has a first robot 4602 and a second robot 4606. It can be provided that the first robot 4602 transports substrate W between coating block 30a, additional process chamber 4200, and interface buffer 4400; the interface robot 4606 transports substrate W between interface buffer 4400 and exposure apparatus 50; and the second robot 4604 transports substrate W between interface buffer 4400 and developing block 30b.

[0095] The first robot 4602 and the second robot 4606 can each include a robotic arm 2220 that holds a substrate W. The robotic arm 2220 is provided to be able to move forward and backward, and to rotate about the Z-axis (Z) and move along the Z-axis (Z).

[0096] On the other hand, such as using Figures 1 to 7 As shown in the description, a first groove for forming a protruding first water film and a second groove for forming a protruding second water film can also be provided in the liquid treatment chamber 3600.

[0097] The substrate can be cleaned using the protruding first and second water films at various stages.

[0098] As an example, in the liquid treatment chamber 3600, a photoresist film or anti-reflection film is formed on the substrate W, and then the edge area of ​​the substrate W is cleaned by protruding first and second water films. Next, the substrate W is moved to the heat treatment chamber 3200 and baked. Then, the substrate W can be transferred to the exposure apparatus 50 via the interface module 40.

[0099] As another example, a photoresist film or anti-reflection film is formed on the substrate W in the liquid treatment chamber 3600. Next, the substrate W is moved to the heat treatment chamber 3200 and baked. Then, the substrate W can be transferred to the exposure apparatus 50 via the interface module 40. Next, it is moved back to the liquid treatment chamber 3600, where the edge areas of the substrate W are cleaned by protruding first and second water films.

[0100] Although embodiments of the invention have been described above with reference to the accompanying drawings, those skilled in the art will recognize that the invention can be implemented in other specific forms without altering its technical concept or essential characteristics. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A substrate processing apparatus, comprising: A support platform that allows the substrate to rotate; The first tank is disposed around the support platform, stores cleaning fluid, and has a first opening on its upper surface; as well as A first ultrasonic oscillator is disposed in the first tank and provides ultrasonic waves toward the surface of the cleaning fluid exposed through the first opening to form a first water film protruding from the surface of the cleaning fluid. The height of the first water film protruding from the surface of the cleaning fluid can be adjusted by adjusting the oscillation output. The substrate processing device controls the oscillation output of the first ultrasonic oscillator and the viscosity and temperature of the cleaning solution to ensure that the height of the first water film is consistent with the target height. The substrate is not immersed in the first tank, and the edge area of ​​the substrate is cleaned by the protruding first water film during the rotation of the substrate by the support platform.

2. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus further includes a nozzle for spraying cleaning gas onto the upper surface of the edge region of the substrate.

3. The substrate processing apparatus according to claim 2, wherein, The nozzle is tilted toward the edge region of the substrate, and the cleaning gas ejected from the nozzle pushes the contaminants out of the substrate.

4. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus includes: A second tank, spaced apart from the first tank around the support platform, stores cleaning fluid and has a second opening on its upper surface; and A second ultrasonic oscillator is disposed in the second tank and provides ultrasonic waves toward the surface of the cleaning liquid exposed by the second opening to form a second water film protruding from the surface of the cleaning liquid.

5. The substrate processing apparatus according to claim 4, wherein, The first slot and the second slot are arranged symmetrically about the rotation axis of the support platform.

6. The substrate processing apparatus according to claim 4, wherein, The cleaning solution stored in the first tank and the cleaning solution stored in the second tank are different substances.

7. The substrate processing apparatus according to claim 4, wherein, The oscillation output of the first ultrasonic oscillator used to form the first water film and the oscillation output of the second ultrasonic oscillator used to form the second water film are different from each other.

8. The substrate processing apparatus according to claim 1, wherein, The first tank includes a supply port for supplying cleaning fluid and a discharge port for discharging cleaning fluid. During the cleaning of the substrate, cleaning fluid is continuously supplied through the supply port.

9. The substrate processing apparatus according to claim 8, wherein, The supply port is located on the side wall of the first tank, and the discharge port is located on the bottom surface of the first tank.

10. The substrate processing apparatus according to claim 9, wherein, The first groove includes a first region that overlaps with the substrate and a second region that does not overlap with the substrate, and the supply port is located in the first region.

11. The substrate processing apparatus according to claim 1, wherein, The first ultrasonic oscillator is disposed on the bottom surface of the first groove.

12. A substrate processing apparatus, comprising: A support platform that allows the substrate to rotate; The first tank is disposed around the support platform, stores the first cleaning fluid, and has a first opening on its upper surface; A first ultrasonic oscillator is disposed on the bottom surface of the first tank and provides ultrasonic waves toward the surface of the cleaning liquid exposed from the first opening to form a first water film protruding from the surface of the first cleaning liquid, and the height of the first water film protruding from the surface of the first cleaning liquid can be adjusted by adjusting the oscillation output. A first nozzle is configured at the top of the first groove to be inclined toward the edge region of the substrate and to spray cleaning gas onto the upper surface of the edge region of the substrate. The second tank is disposed around the support platform, spaced apart from the first tank, to store the second cleaning fluid and has a second opening on its upper surface; A second ultrasonic oscillator is disposed on the bottom surface of the second tank and provides ultrasonic waves toward the surface of the second cleaning liquid exposed by the second opening to form a second water film protruding from the surface of the second cleaning liquid. as well as The second nozzle, located at the upper part of the second groove, is configured to be inclined toward the edge region of the substrate and to spray cleaning gas onto the upper surface of the edge region of the substrate. The substrate processing device controls the oscillation output of the first ultrasonic oscillator and the viscosity and temperature of the cleaning solution to ensure that the height of the first water film is consistent with the target height. The substrate is not immersed in the first and second tanks, and the edge area of ​​the substrate is cleaned by the protruding first and second water films during the rotation of the substrate by the support platform.

13. The substrate processing apparatus according to claim 12, wherein, The first slot and the second slot are arranged symmetrically about the rotation axis of the support platform.

14. The substrate processing apparatus according to claim 12, wherein, The cleaning solution stored in the first tank and the cleaning solution stored in the second tank are different substances.

15. The substrate processing apparatus according to claim 12, wherein, The oscillation output of the first ultrasonic oscillator used to form the first water film and the oscillation output of the second ultrasonic oscillator used to form the second water film are different from each other.

16. The substrate processing apparatus according to claim 12, wherein, The first tank includes a supply port for supplying cleaning fluid and a discharge port for discharging cleaning fluid. During the cleaning of the substrate, cleaning fluid is continuously supplied through the supply port.

17. The substrate processing apparatus according to claim 16, wherein, The first groove includes a first region that overlaps with the substrate and a second region that does not overlap with the substrate. The supply port is located on the side wall of the first region, and the discharge port is located on the bottom surface of the second region.

18. A substrate processing method, comprising: A substrate processing apparatus is provided, the substrate processing apparatus comprising: a chamber; a support stage located within the chamber; a first tank disposed around the support stage and storing a cleaning solution; and a first ultrasonic oscillator disposed in the first tank. The substrate is positioned on a support platform within the cavity; While rotating the substrate via the support platform, a photoresist is applied to the substrate; and While the substrate is rotated via the support platform, ultrasonic waves are supplied by the first ultrasonic oscillator toward the surface of the cleaning liquid stored in the first tank to form a first water film protruding from the surface of the cleaning liquid. The edge area of ​​the substrate is cleaned by the first water film. The substrate processing method further includes controlling the oscillation output of the first ultrasonic oscillator and the viscosity and temperature of the cleaning fluid, so that the height of the first water film protruding from the surface of the cleaning fluid is consistent with the target height.

19. The substrate processing method according to claim 18, wherein, The substrate processing method further includes: spraying cleaning gas onto the upper surface of the edge region of the substrate while cleaning the edge region of the substrate through the protruding first water film.

20. The substrate processing method according to claim 18, wherein, The processing apparatus further includes: a second tank disposed around the support platform, spaced apart from the first tank, and storing cleaning fluid; and a second ultrasonic oscillator disposed in the second tank. The substrate processing method further includes: During the cleaning of the edge region of the substrate through the protruding first water film, the second ultrasonic oscillator provides ultrasonic waves toward the surface of the cleaning liquid to form a second water film protruding from the surface of the cleaning liquid, through which the edge region of the substrate is cleaned. The cleaning solution stored in the first tank and the cleaning solution stored in the second tank are different substances.

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