A preparation method of polyarylethernitrile material and its application in intrinsic ultra-low dielectric material

By introducing isopropyl groups into bisphenol monomers, polyarylether nitrile or ketone resins with main chains connected by ether bonds and carbonyl bonds are prepared, which solves the problems of dielectric properties and heat resistance of high-frequency electronic materials, and realizes materials with low dielectric constant, low dielectric loss and high glass transition temperature, which are suitable for 5G networks.

CN116262826BActive Publication Date: 2025-09-19DALIAN INSTITUTE OF CHEMICAL PHYSICS CHINESE ACADEMY OF SCIENCES
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Patent Information

Application Number
CN202111538962.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-12-15
Publication Date
2025-09-19
Estimated Expiration
2041-12-15

AI Technical Summary

Technical Problem

The dielectric constant and dielectric loss of existing high-frequency electronic materials are difficult to meet the stringent requirements of 5G networks. Conventional polyarylene ether resins have limitations in reducing dielectric properties and heat resistance, and fluorine-containing materials are expensive and environmentally unfriendly.

Method used

By introducing an asymmetric isopropyl group into the bisphenol monomer, the steric hindrance of the polymer side chain is increased, and a polyarylether nitrile or ketone resin whose main chain is connected by ether bonds and carbonyl bonds is prepared, avoiding the use of fluorine atoms, increasing the spatial volume and heat resistance of the material, and reducing the density.

Benefits of technology

The low-dielectric material has achieved a dielectric constant of ≤3.2, a dielectric loss of ≤0.006, and a glass transition temperature of ≥170°C. It is cost-effective and environmentally friendly and is suitable for high-frequency electronic products.

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Abstract

The present application discloses a non-fluorine polyaryletherketone (nitrile) resin, which adjusts the size and position of the long-chain side groups through the main chain structure design, further reduces the close stacking between the molecular chains, and can form a larger pore structure during the molding process, so that it has a lower dielectric constant and dielectric loss. At the same time, the material does not produce toxic and harmful substances such as fluorophosgene when treated at high temperatures, ensuring the safety of the material. The non-fluorine low-dielectric polyaryletherketone (nitrile) resin of the present application has the advantages of low dielectric constant and low dielectric loss, and is widely used in 5G and higher frequency communication fields.
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