A laser epitaxial structure of a hollow graphene tube grid embedded waveguide structure

Abstract

The application discloses a laser epitaxial structure of a hollow graphene tube grid embedded waveguide structure, wherein a layer of grid structure hollow graphene tube layers are embedded in upper waveguide layers and lower waveguide layers of the laser epitaxial structure, and the grid structure hollow graphene tube layers form composite upper waveguide layers and composite lower waveguide layers, respectively; the grid structure hollow graphene tube comprises a grid slot and a hollow graphene tube filled in the grid slot. The laser epitaxial structure of the application embeds the hollow graphene tube layers with the grid structure characteristics in the upper waveguide layers and the lower waveguide layers of the laser at the same time, forms the hollow graphene tube grid embedded waveguide structure, breaks the mutual restriction relationship between the stress buffering and the light limitation ability of the light field distribution in the physical layer, improves the light beam quality on the basis of ensuring the high output power, reduces the threshold current and the series resistance, and improves the reliability of the laser and prolongs the service life of the laser.

Description

Technical Field

[0001] This invention relates to the field of semiconductor laser technology, and more specifically to a laser epitaxial structure with a hollow graphene tube mesh embedded waveguide structure. Background Technology

[0002] The information disclosed in the background section of this invention is intended only to enhance the understanding of the overall background of the invention and is not necessarily to be construed as an admission or in any way implying that such information constitutes prior art known to those skilled in the art.

[0003] High-power semiconductor lasers have seen increasingly wider applications in fields such as medical aesthetics, laser ranging, industrial processing, and communications in recent years. After decades of development, to meet societal demands, researchers have successively introduced semiconductor lasers with structures such as heterojunctions, double heterojunctions, asymmetric waveguides, and wide waveguides, achieving significant progress in output power. Among these, the wide waveguide structure increases the effective gain area of ​​the light beam and is currently the optimal solution for improving power. However, while the wide waveguide structure can increase power, the increased thickness leads to a rise in series resistance, resulting in a significant increase in voltage and threshold current. Under high current operation, the laser beam quality is severely affected, and the injection of high current can cause localized overheating of the laser, seriously impacting its long-term reliability. Summary of the Invention

[0004] To address the aforementioned problems, this invention provides a laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure. This structure can improve the laser's output power without affecting beam quality or causing localized overheating due to significant increases in voltage and threshold current. To achieve the above objectives, this invention discloses the following technical solution.

[0005] A laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure is disclosed. The upper and lower waveguide layers of the laser epitaxial structure each have a layer of hollow graphene tube mesh embedded in them, forming a composite upper waveguide layer and a composite lower waveguide layer, respectively. The hollow graphene tube mesh includes a mesh groove and a hollow graphene tube filled in the mesh groove.

[0006] Furthermore, the thickness of the mesh-structured hollow graphene tube layer ranges from 10 to 30 nm.

[0007] Furthermore, the shape of the grid groove includes any one of square groove, circular groove, conical groove, trapezoidal groove, etc.

[0008] Furthermore, the size range of the grid groove can be selected according to the size range of the epitaxial wafer, for example, the side length or diameter of the grid groove is between 2 and 8 inches, etc., and the depth of the grid groove is matched with the thickness of the hollow graphene tube layer of the grid structure, such as 10 to 30 nm.

[0009] Furthermore, the composite lower waveguide layer includes: Al x2 Ga 1-x2 As lower waveguide layer, lower mesh structure hollow graphene tube layer, Al x3 Ga 1-x3 As the lower waveguide layer. Wherein: the lower mesh structure hollow graphene tube layer covers Al. x2 Ga 1-x2 On the lower waveguide layer of As A, the Al x3 Ga 1-x3 As the lower waveguide layer is covered by Al x2 Ga 1-x2 As on the lower waveguide layer. Optionally, the Al x2 Ga 1- x2 In the As waveguide layer, 0.1 ≤ x2 ≤ 0.3. The Al x3 Ga 1-x3 In the lower waveguide layer of As, 0.1≤x3≤0.3.

[0010] Furthermore, the Al x2 Ga 1-x2 The thickness of the As waveguide layer is 0.6–0.8 μm, and the Al x3 Ga 1-x3 The thickness of the As waveguide layer is 0.3–0.4 μm.

[0011] Furthermore, the Al x2 Ga 1-x2 As lower waveguide layer, Al x3 Ga 1-x3 The underlying waveguide layer is doped with silicon (Si). Optionally, the silicon doping concentration is 3E17 to 6E17 atoms / cm³. 3 Doping silicon in the lower waveguide layer facilitates electron migration into the quantum well and promotes recombination of holes and electrons within the quantum well.

[0012] Furthermore, the composite upper waveguide layer includes: Al y2 Ga 1-y2 As upper waveguide layer, upper mesh structure hollow graphene tube layer, Al y3 Ga 1-y3 As upper waveguide layer. Wherein: the upper mesh structure hollow graphene tube layer covers Al. y2 Ga 1-y2On the waveguide layer of As, the Al y3 Ga 1-y3 An As waveguide layer is superimposed on an upper lattice structure hollow graphene tube layer. Optionally, the Al... y2 Ga 1-y2 In the waveguide layer on As, 0.1 ≤ y2 ≤ 0.3. The Al y3 Ga 1-y3 In the waveguide layer on As, 0.1≤y3≤0.3.

[0013] Furthermore, the Al y2 Ga 1-y2 The thickness of the waveguide layer on As is 0.3–0.4 μm, and the Al y3 Ga 1-y3 The thickness of the waveguide layer on As is 0.6–0.8 μm.

[0014] Furthermore, the Al y2 Ga 1-y2 As upper waveguide layer, Al y3 Ga 1-y3 Carbon (C) is doped into the waveguide layer on As. Optionally, the carbon doping concentration is 1E17 to 9E17 atoms / cm³. 3 Doping silicon in the upper waveguide layer facilitates electron migration into the quantum well and promotes recombination of holes and electrons within the quantum well.

[0015] Furthermore, the laser epitaxial structure, from bottom to top, includes: a substrate, a buffer layer, and an Al layer. x1 Ga 1-x1 As N confinement layer, composite lower waveguide layer, Al x4 Ga 1-x4 As lower base, In x5 Ga 1-x5 As quantum well layer, Al y1 Ga 1-y1 As top barrier layer, composite top waveguide layer, Al y4 Ga 1-y4 As P confinement layer, ohmic contact layer.

[0016] Furthermore, the buffer layer is doped with silicon. Optionally, the silicon doping concentration is 1E18-3E18 atoms / cm³. 3 Optionally, the thickness of the buffer layer is 100–300 nm.

[0017] Furthermore, the Al x1 Ga 1-x1The As N confinement layer contains 0.2 ≤ x1 ≤ 0.5 atoms, in which silicon is doped. Optionally, the silicon doping concentration is 8E17 to 2E18 atoms / cm³. 3 Optionally, the Al x1 Ga 1-x1 The thickness of the As N confinement layer is 1–2 μm.

[0018] Furthermore, the Al x4 Ga 1-x4 In the lower barrier layer, 0.1 ≤ x4 ≤ 0.2. Optionally, the Al x4 Ga 1-x4 The thickness of the As barrier layer is 100–300 nm.

[0019] Furthermore, the In x5 Ga 1-x5 In the As quantum well layer, 0.1 ≤ x5 ≤ 0.3. Optionally, the In... x5 Ga 1-x5 The thickness of the As quantum well layer is 5–10 nm.

[0020] Furthermore, the Al y1 Ga 1-y1 In the upper barrier layer of As, 0.1 ≤ y1 ≤ 0.2. Optionally, the Al y1 Ga 1-y1 The thickness of the As overlayer is 100–300 nm.

[0021] Furthermore, the Al y4 Ga 1-y4 The As-P confinement layer contains 0.2 ≤ y4 ≤ 0.5, in which carbon is doped. Optionally, the carbon doping concentration is 9E17 to 5E18 atoms / cm³. 3 Optionally, the Al y4 Ga 1-y4 The thickness of the As P confinement layer is 1–2 μm.

[0022] Furthermore, the ohmic contact layer is doped with carbon. Optionally, the carbon doping concentration is 9E18 to 5E19 atoms / cm³. 3 Optionally, the thickness of the ohmic contact layer is 300–600 nm.

[0023] Compared with the prior art, the present invention has at least the following beneficial effects:

[0024] This invention creates a hollow graphene tube mesh embedded waveguide structure by simultaneously embedding hollow graphene tube layers with a grid structure in the upper and lower waveguide layers of a laser. This structure overcomes the mutual constraints between physical stress buffering and optical field distribution, improving beam quality, reducing threshold current and series resistance, and enhancing laser reliability and extending its lifespan while maintaining high output power. The main reason for this is that graphene is a novel single-atom-layer two-dimensional material with its valence and conduction bands at the Dirac point, i.e., a zero bandgap. Furthermore, graphene's light absorption rate in the visible light band is only 2.3%, and this absorption rate can be tuned by changing the Fermi level. The grid-structured hollow graphene tubes used in this invention effectively alleviate stress during epitaxial growth, especially during secondary epitaxial growth, and also provide good buffering for stress introduced during chip packaging. This not only stabilizes the waveguide layer and reduces mode changes caused by stress accumulation, but also prevents stress from spreading into the quantum well. Furthermore, this invention also utilizes the evanescent waves generated around the AlGaAs waveguide to enhance the graphene-light interaction in terms of optical confinement, forming an integrated graphene waveguide structure. This successfully improves the compatibility between graphene and laser epitaxial materials. Thanks to the interface effect of graphene encapsulation, the maximum polaron mode field strength is located on the surface of the graphene layer, and the surface electrostatic focusing effect is more obvious at this location. Therefore, the graphene waveguide structure has better optical confinement capability. At the same time, the AlGaAs waveguide around the graphene reduces the area of ​​interaction between graphene and light, thereby reducing losses. Attached Figure Description

[0025] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an improper limitation of the invention.

[0026] Figure 1 The following is a schematic diagram of the laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure, as shown in the embodiments below.

[0027] Figure 2 This is a side view of the composite upper waveguide layer or composite lower waveguide layer in the following embodiments.

[0028] Figure 3 This is a top view of the composite upper waveguide layer or composite lower waveguide layer in the following embodiments. Detailed Implementation

[0029] It should be noted that the following detailed description is illustrative and intended to provide further explanation of the invention. Unless otherwise specified, all technical and scientific terms used in this invention have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.

[0030] For ease of description, the terms "up," "down," "left," and "right" appearing in this invention only indicate that they correspond to the up, down, left, and right directions in the accompanying drawings. They do not limit the structure and are merely used to facilitate the description of the invention and to simplify the description. They do not indicate or imply that the device or component referred to needs to have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, any methods and materials similar to or equivalent to those described can be applied to the methods of this invention.

[0031] Example 1

[0032] A laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure, reference Figures 1 to 3 Its preparation method includes the following steps:

[0033] 1. Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 740℃ and bake for 30 minutes, then introduce AsH3 to perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen from the substrate surface.

[0034] 2. The reaction chamber temperature is lowered to 710℃, and TMGa and AsH3 are introduced to grow a 300nm thick GaAs buffer layer on the GaAs substrate. Silicon is doped using Si2H6 as the doping source at a concentration of 2E18 atoms / cm³. 3 .

[0035] 3. Lower the reaction chamber temperature to 650℃, introduce TMAl, TMGa, and AsH3, and grow an Al layer with a thickness of 1.5 μm on the GaAs buffer layer. x1 Ga 1-x1 As an N-confinement layer, x1 = 0.40. Simultaneously, silicon is doped using Si₂H₆ as the doping source, with a doping concentration of 1E¹⁸ atoms / cm². 3 .

[0036] 4. Maintain the reaction chamber temperature at 650℃, and introduce TMAl, TMGa, and AsH3. In the Al... x1 Ga 1-x1 Al with a thickness of 0.7 μm is grown on an As N confinement layer. x2 Ga 1-x2 As the lower waveguide layer, x2 = 0.2. Simultaneously, silicon is doped using Si2H6 as the doping source, with a doping concentration of 5E17 atoms / cm³. 3 .

[0037] 5. In the Al x2 Ga 1-x2After the lower waveguide layer of As is grown, the resulting epitaxial wafer is removed and subjected to die-mounting processes such as cleaning, photolithography, and development on the Al layer. x2 Ga 1-x2 Square grid grooves (4 inches on each side and 15 nm deep) are etched on the surface of the lower waveguide layer; then hollow graphene tubes are laid in the grid grooves to form a lower grid structure hollow graphene tube layer.

[0038] 6. Place the epitaxial structure obtained in step 5 in a reaction chamber, maintain the reaction chamber temperature at 650℃, and introduce TMAl, TMGa, and AsH3 to grow an Al layer with a thickness of 0.35 μm on the lower mesh structure hollow graphene tube layer. x3 Ga 1-x3 As the lower waveguide layer, a composite lower waveguide layer is formed, where x3 = 0.2. Simultaneously, silicon is doped using Si₂H₆ as the doping source, with a doping concentration of 5E¹⁷ atoms / cm². 3 .

[0039] 7. Maintain the reaction chamber temperature at 650℃, and introduce TMAl, TMGa, and AsH3. In the Al... x3 Ga 1-x3 An Al layer with a thickness of 200 nm is grown on the As lower waveguide layer. x4 Ga 1-x4 As is the lower barrier layer, x4 = 0.1.

[0040] 8. Maintain the reaction chamber temperature until it drops to 550°C, then introduce TMIn, TMGa, and AsH3 into the Al... x4 Ga 1-x4 In with a thickness of 7 nm is grown on the As lower barrier layer. x5 Ga 1-x A 5As quantum well layer, wherein x5 = 0.2.

[0041] 9. Maintain the reaction chamber temperature to 650°C, and introduce TMAl, TMGa, and AsH3. In the... x5 Ga 1-x Al with a thickness of 200 nm is grown on a 5As quantum well layer y1 Ga 1-y1 As is the upper barrier layer, y1 = 0.1.

[0042] 10. Maintain the reaction chamber temperature at 650℃, and introduce TMAl, TMGa, and AsH3. In the Al... y1 Ga 1-y1 An Al layer with a thickness of 0.35 μm is grown on top of the As layer. y2 Ga 1-y2 As the waveguide layer, y2 = 0.2. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 5E17 atoms / cm².3 .

[0043] 11. In the Al y2 Ga 1-y2 After the waveguide layer on As is grown, the resulting epitaxial wafer is removed and subjected to die-mounting processes such as cleaning, photolithography, and development on the Al. y2 Ga 1-y2 Square grid grooves (4 inches on each side and 15 nm deep) are etched on the surface of the As waveguide layer; then hollow graphene tubes are laid in the grid grooves to form a hollow graphene tube layer with an upper grid structure.

[0044] 12. Place the epitaxial structure obtained in step 11 in a reaction chamber, maintain the reaction chamber temperature at 650℃, and introduce TMAl, TMGa, and AsH3 to grow an Al layer with a thickness of 0.7 μm on the upper mesh structure hollow graphene tube layer. y3 Ga 1-y3 An As upper waveguide layer is formed, thus creating a composite upper waveguide layer, where y3 = 0.2. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 5E17 atoms / cm³. 3 .

[0045] 13. Maintain the reaction chamber temperature at 650℃, and introduce TMAl, TMGa, and AsH3. In the Al... y3 Ga 1-y3 An Al layer with a thickness of 1.5 μm is grown on the As waveguide layer. y4 Ga 1-y4 As a P-confined layer, y4 = 0.4. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 1E18 atoms / cm³. 3 .

[0046] 14. Lower the reaction chamber temperature to 550°C, then introduce TMGa and AsH3 into the Al... y4 Ga 1-y4 A 500 nm thick GaAs ohmic contact layer is grown on an As P confinement layer. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 3E19 atoms / cm³. 3 .

[0047] Example 2

[0048] A laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure, reference Figures 1 to 3 Its preparation method includes the following steps:

[0049] 1. Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 750℃ and bake for 20 minutes, then introduce AsH3 to perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen from the substrate surface.

[0050] 2. The reaction chamber temperature is lowered to 720℃, and TMGa and AsH3 are introduced to grow a 200nm thick GaAs buffer layer on the GaAs substrate. Silicon is doped using Si2H6 as the doping source at a concentration of 1E18 atoms / cm³. 3 .

[0051] 3. Lower the reaction chamber temperature to 680℃, introduce TMAl, TMGa, and AsH3, and grow an Al layer with a thickness of 2.0 μm on the GaAs buffer layer. x1 Ga 1-x1 As an N-confinement layer, x1 = 0.50. Simultaneously, silicon is doped using Si₂H₆ as the doping source, with a doping concentration of 2E¹⁸ atoms / cm². 3 .

[0052] 4. Maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3. In the Al... x1 Ga 1-x1 Al with a thickness of 0.8 μm is grown on an As N confinement layer. x2 Ga 1-x2 As the lower waveguide layer, x2 = 0.3. Simultaneously, silicon is doped using Si2H6 as the doping source, with a doping concentration of 6E17 atoms / cm³. 3 .

[0053] 5. In the Al x2 Ga 1-x2 After the lower waveguide layer of As is grown, the resulting epitaxial wafer is removed and subjected to die-mounting processes such as cleaning, photolithography, and development on the Al layer. x2 Ga 1-x2 A circular grid groove (2 inches in diameter and 10 nm in depth) is etched on the surface of the lower waveguide layer; then hollow graphene tubes are laid in the grid grooves to form a lower grid structure hollow graphene tube layer.

[0054] 6. Place the epitaxial structure obtained in step 5 in a reaction chamber, maintain the reaction chamber temperature at 680℃, and introduce TMAl, TMGa, and AsH3 to grow an Al layer with a thickness of 0.4 μm on the lower mesh structure hollow graphene tube layer. x3 Ga 1-x3 As the lower waveguide layer, a composite lower waveguide layer is formed, where x3 = 0.3. Simultaneously, silicon is doped using Si₂H₆ as the doping source, with a doping concentration of 6E¹⁷ atoms / cm². 3 .

[0055] 7. Maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3. In the Al... x3 Ga 1-x3 An Al layer with a thickness of 300 nm is grown on the lower waveguide layer. x4 Ga 1-x4 As is the lower barrier layer, x4 = 0.2.

[0056] 8. Maintain the reaction chamber temperature until it drops to 580°C, then introduce TMIn, TMGa, and AsH3 into the Al... x4 Ga 1-x4 In with a thickness of 10 nm is grown on the As lower barrier layer. x5 Ga 1-x A 5As quantum well layer, wherein x5 = 0.3.

[0057] 9. Maintain the reaction chamber temperature to 680°C, and introduce TMAl, TMGa, and AsH3. In the... x5 Ga 1-x Al with a thickness of 300 nm is grown on a 5As quantum well layer y1 Ga 1-y1 As is the upper barrier layer, where y1 = 0.2.

[0058] 10. Maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3. In the Al... y1 Ga 1-y1 An Al layer with a thickness of 0.4 μm is grown on top of the As barrier layer. y2 Ga 1-y2 As the waveguide layer, y2 = 0.3. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 9E17 atoms / cm³. 3 .

[0059] 11. In the Al y2 Ga 1-y2 After the waveguide layer on As is grown, the resulting epitaxial wafer is removed and subjected to die-mounting processes such as cleaning, photolithography, and development on the Al. y2 Ga 1-y2 A circular grid groove (2 inches in diameter and 10 nm in depth) is etched on the surface of the As waveguide layer; then hollow graphene tubes are laid in the grid grooves to form an upper grid structure hollow graphene tube layer.

[0060] 12. Place the epitaxial structure obtained in step 11 in a reaction chamber, maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3 to grow an Al layer with a thickness of 0.8 μm on the upper mesh structure hollow graphene tube layer. y3 Ga 1-y3An As upper waveguide layer is formed, thus creating a composite upper waveguide layer, where y3 = 0.3. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 5E17 atoms / cm³. 3 .

[0061] 13. Maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3. In the Al... y3 Ga 1-y3 An Al layer with a thickness of 2.0 μm is grown on the As waveguide layer. y4 Ga 1-y4 As a P-confined layer, y4 = 0.5. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 5E18 atoms / cm³. 3 .

[0062] 14. Lower the reaction chamber temperature to 560°C, then introduce TMGa and AsH3 into the Al... y4 Ga 1-y4 A 600 nm thick GaAs ohmic contact layer is grown on an As P confinement layer. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 3E19 atoms / cm³. 3 .

[0063] Example 3

[0064] A laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure, reference Figures 1 to 3 Its preparation method includes the following steps:

[0065] 1. Place the GaAs substrate in the growth chamber of the MOCVD equipment, heat the H2 environment to 730℃ and bake for 40 minutes, then introduce AsH3 to perform high-temperature heat treatment on the GaAs substrate to remove water and oxygen from the substrate surface.

[0066] 2. The reaction chamber temperature is lowered to 700℃, and TMGa and AsH3 are introduced to grow a GaAs buffer layer with a thickness of 1200 nm on the GaAs substrate. Silicon is doped using Si2H6 as the doping source at a concentration of 3E18 atoms / cm³. 3 .

[0067] 3. Lower the reaction chamber temperature to 640℃, introduce TMAl, TMGa, and AsH3, and grow an Al layer with a thickness of 1.0 μm on the GaAs buffer layer. x1 Ga 1-x1 As an N-confinement layer, x1 = 0.2. Simultaneously, silicon is doped using Si₂H₆ as the doping source, with a doping concentration of 8E¹⁷ atoms / cm². 3 .

[0068] 4. Maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3. In the Al... x1 Ga 1-x1 Al with a thickness of 0.6 μm is grown on an As N confinement layer. x2 Ga 1-x2 As the lower waveguide layer, x2 = 0.1. Simultaneously, silicon is doped using Si2H6 as the doping source, with a doping concentration of 3E17 atoms / cm³. 3 .

[0069] 5. In the Al x2 Ga 1-x2 After the lower waveguide layer of As is grown, the resulting epitaxial wafer is removed and subjected to die-mounting processes such as cleaning, photolithography, and development on the Al layer. x2 Ga 1-x2 A circular grid groove (8 inches in diameter and 30 nm in depth) is etched on the surface of the lower waveguide layer; then hollow graphene tubes are laid in the grid grooves to form a lower grid structure hollow graphene tube layer.

[0070] 6. Place the epitaxial structure obtained in step 5 in a reaction chamber, maintain the reaction chamber temperature at 680℃, and introduce TMAl, TMGa, and AsH3 to grow an Al layer with a thickness of 0.3 μm on the lower mesh structure hollow graphene tube layer. x3 Ga 1-x3 As a lower waveguide layer, thus forming a composite lower waveguide layer, where x3 = 0.1. Simultaneously, silicon is doped using Si₂H₆ as the doping source, with a doping concentration of 3E¹⁷ atoms / cm². 3 .

[0071] 7. Maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3. In the Al... x3 Ga 1-x3 An Al layer with a thickness of 100 nm is grown on the As lower waveguide layer. x4 Ga 1-x4 As is the lower barrier layer, x4 = 0.1.

[0072] 8. Maintain the reaction chamber temperature until it drops to 540°C, then introduce TMIn, TMGa, and AsH3 into the Al... x4 Ga 1-x4 In with a thickness of 10 nm is grown on the As lower barrier layer. x5 Ga 1-x A 5As quantum well layer, wherein x5 = 0.1.

[0073] 9. Maintain the reaction chamber temperature at 640°C, and introduce TMAl, TMGa, and AsH3. In the... x5 Ga 1-xAl with a thickness of 100 nm is grown on a 5As quantum well layer y1 Ga 1-y1 As is the upper barrier layer, y1 = 0.1.

[0074] 10. Maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3. In the Al... y1 Ga 1-y1 An Al layer with a thickness of 0.3 μm is grown on top of the As barrier layer. y2 Ga 1-y2 As the waveguide layer, y2 = 0.1. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 1E17 atoms / cm². 3 .

[0075] 11. In the Al y2 Ga 1-y2 After the waveguide layer on As is grown, the resulting epitaxial wafer is removed and subjected to die-mounting processes such as cleaning, photolithography, and development on the Al. y2 Ga 1-y2 A circular grid groove (8 inches in diameter and 30 nm in depth) is etched on the surface of the As waveguide layer; then hollow graphene tubes are laid in the grid grooves to form an upper grid structure hollow graphene tube layer.

[0076] 12. Place the epitaxial structure obtained in step 11 in a reaction chamber, maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3 to grow an Al layer with a thickness of 0.6 μm on the upper mesh structure hollow graphene tube layer. y3 Ga 1-y3 An As upper waveguide layer is formed, thus creating a composite upper waveguide layer, where y3 = 0.1. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 1E17 atoms / cm³. 3 .

[0077] 13. Maintain the reaction chamber temperature at 640℃, and introduce TMAl, TMGa, and AsH3. In the Al... y3 Ga 1-y3 An Al layer with a thickness of 1.0 μm is grown on the As waveguide layer. y4 Ga 1-y4 As a P-confined layer, y4 = 0.2. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 9E17 atoms / cm³. 3 .

[0078] 14. Lower the reaction chamber temperature to 540°C, then introduce TMGa and AsH3 into the Al... y4 Ga 1-y4A 300 nm thick GaAs ohmic contact layer is grown on an As P confinement layer. Simultaneously, carbon is doped using CBr4 as the doping source, with a doping concentration of 9E18 atoms / cm³. 3 .

[0079] Example 4

[0080] A method for fabricating a laser epitaxial structure, similar to Example 1 above, except that: the Al... x2 Ga 1-x2 As lower waveguide layer and Al x3 Ga 1-x3 Instead of setting the lower mesh structure hollow graphene tube layer between the lower waveguide layers, Al is directly fabricated in one step. 0.1 Ga 0.9 The underlying waveguide layer, As, has a thickness of 1.05 μm. Meanwhile, it is not present in the Al layer. y2 Ga 1-y2 As upper waveguide layer and Al y3 Ga 1-y3 Instead of setting the upper mesh structure hollow graphene tube layer between the upper waveguide layers, Al is directly fabricated in one step. 0.1 Ga 0.9 The waveguide layer on As has a thickness of 1.05 μm.

[0081] Example 5

[0082] A method for fabricating a laser epitaxial structure, similar to Example 2 above, except that: the Al... x2 Ga 1-x2 As lower waveguide layer and Al x3 Ga 1-x3 Instead of setting the lower mesh structure hollow graphene tube layer between the lower waveguide layers, Al is directly fabricated in one step. 0.1 Ga 0.9 The As waveguide layer has a thickness of 1.2 μm.

[0083] Example 6

[0084] A method for fabricating a laser epitaxial structure, similar to Example 1 above, except that: the Al... y2 Ga 1-y2 As upper waveguide layer and Al y3 Ga 1-y3 Instead of setting the upper mesh structure hollow graphene tube layer between the upper waveguide layers, Al is directly fabricated in one step. 0.1 Ga 0.9 The waveguide layer on As has a thickness of 0.9 μm.

[0085] The laser epitaxial structures obtained in Examples 1 to 6 were respectively encapsulated onto COS heat sinks. The samples were tested under a continuous operating current of 30A at room temperature. Ten COS units of each type were selected and subjected to a continuous aging test at 35A for 1000 hours, and the number of failures was monitored. The results of the above tests are shown in Table 1 below.

[0086] Table 1

[0087] Example sequence number Threshold current Output power Operating voltage Number of aging failures Example 1 1.72A 32.53W 1.63V 0 Example 2 1.70A 31.67W 1.62V 0 Example 3 1.73A 32.92W 1.59V 0 Example 4 1.85A 30.06W 1.68V 3 Example 5 1.79A 30.85W 1.66V 1 Example 6 1.77A 30.45W 1.65V 1

[0088] As can be seen, compared with Examples 4 to 6, Examples 1 to 3 simultaneously embed hollow graphene tube layers with grid structure characteristics in the upper and lower waveguide layers of the laser epitaxial structure (see reference). Figure 1 This process forms a hollow graphene tube mesh embedded waveguide structure, which overcomes the mutual constraints between physical stress buffering and optical field distribution. While ensuring high output power, it improves beam quality, reduces threshold current and series resistance, and enhances laser reliability and extends its lifespan. However, when the laser epitaxial structures prepared in Examples 4 to 6 lack the aforementioned hollow graphene tube layer with mesh structure characteristics in the upper and / or lower waveguide layers, the failure to form a hollow graphene tube mesh embedded waveguide structure leads to a significant decline in various laser performance characteristics.

[0089] Finally, it should be noted that any modifications, equivalent substitutions, or improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention. Although specific embodiments of this invention have been described above in conjunction with the accompanying drawings, this is not intended to limit the scope of protection of this invention. Those skilled in the art should understand that various modifications or variations that can be made by those skilled in the art without creative effort based on the technical solutions of this invention are still within the scope of protection of this invention.

Claims

1. A laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure, characterized in that, The upper and lower waveguide layers of the laser epitaxial structure are each embedded with a layer of mesh-structured hollow graphene tubes, forming a composite upper waveguide layer and a composite lower waveguide layer, respectively. The mesh-structured hollow graphene tubes include mesh grooves and hollow graphene tubes filled in the mesh grooves.

2. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 1, characterized in that, The thickness of the hollow graphene tube layer with the grid structure ranges from 10 to 30 nm.

3. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 1, characterized in that, The shape of the grid groove includes any one of square groove, circular groove, conical groove, and trapezoidal groove.

4. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 1, characterized in that, The side length or diameter of the mesh groove is between 2 and 8 inches, and the depth of the mesh groove is between 10 and 30 nm.

5. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 1, characterized in that, The composite lower waveguide layer includes: Al x2 Ga 1-x2 As lower waveguide layer, lower mesh structure hollow graphene tube layer, Al x3 Ga 1-x3 As the lower waveguide layer; wherein: the lower mesh structure hollow graphene tube layer covers Al x2 Ga 1-x2 On the lower waveguide layer of As A, the Al x3 Ga 1-x3 As the lower waveguide layer is covered by Al x2 Ga 1-x2 As on the lower waveguide layer.

6. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 5, characterized in that, The Al x2 Ga 1-x2 In the lower waveguide layer of As, 0.1≤x2≤0.

3.

7. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 5, characterized in that, The Al x3 Ga 1-x3 In the lower waveguide layer of As, 0.1≤x3≤0.

3.

8. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 5, characterized in that, The Al x2 Ga 1-x2 The thickness of the As waveguide layer is 0.6~0.8 μm, and the Al x3 Ga 1-x3 The thickness of the As waveguide layer is 0.3~0.4 μm.

9. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 5, characterized in that, The Al x2 Ga 1-x2 As lower waveguide layer, Al x3 Ga 1-x3 Silicon is doped in all As waveguide layers.

10. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 9, characterized in that, The silicon doping concentration is 3E17~6E17 atoms / cm³. 3 .

11. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 1, characterized in that, The composite upper waveguide layer includes: Al y2 Ga 1-y2 As upper waveguide layer, upper mesh structure hollow graphene tube layer, Al y3 Ga 1-y3 As upper waveguide layer; wherein: the upper mesh structure hollow graphene tube layer covers Al y2 Ga 1-y2 On the waveguide layer of As, the Al y3 Ga 1-y3 The upper waveguide layer is covered on the upper grid structure hollow graphene tube layer.

12. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 11, characterized in that, The Al y2 Ga 1-y2 In the waveguide layer on As, 0.1≤y2≤0.

3.

13. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 11, characterized in that, The Al y3 Ga 1-y3 In the waveguide layer on As, 0.1≤y3≤0.

3.

14. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 11, characterized in that, The Al y2 Ga 1-y2 The thickness of the waveguide layer on As is 0.3~0.4 μm, and the Al y3 Ga 1-y3 The thickness of the waveguide layer on As is 0.6~0.8um.

15. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 11, characterized in that, The Al y2 Ga 1-y2 As upper waveguide layer, Al y3 Ga 1-y3 Carbon is doped into the waveguide layer on As.

16. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 15, characterized in that, The carbon doping concentration is 1E17~9E17 atoms / cm³. 3 Doping silicon in the upper waveguide layer facilitates electron migration into the quantum well and promotes recombination of holes and electrons in the quantum well.

17. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to any one of claims 1-16, characterized in that, The laser epitaxial structure, from bottom to top, includes: a substrate, a buffer layer, and an Al layer. x1 Ga 1-x1 As N confinement layer, composite lower waveguide layer, Al x4 Ga 1-x4 As lower base, In x5 Ga 1-x5 As quantum well layer, Al y1 Ga 1- y1 As top barrier layer, composite top waveguide layer, Al y4 Ga 1-y4 As P confinement layer, ohmic contact layer.

18. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The buffer layer is doped with silicon.

19. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 18, characterized in that, The silicon doping concentration is 1E18-3E18 atoms / cm³. 3 .

20. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The thickness of the buffer layer is 100~300nm.

21. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The ohmic contact layer is doped with carbon.

22. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 21, characterized in that, The carbon doping concentration is 9E18~5E19 atoms / cm³. 3 .

23. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The thickness of the ohmic contact layer is 300~600nm.

24. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The Al x1 Ga 1-x1 The As-N confinement layer contains 0.2 ≤ x1 ≤ 0.5, in which silicon is doped.

25. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 24, characterized in that, The silicon doping concentration is 8E17~2E18 atoms / cm³. 3 .

26. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The Al x1 Ga 1-x1 The thickness of the As N confinement layer is 1~2 μm.

27. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The Al x4 Ga 1-x4 In the lower layer of As, 0.1≤x4≤0.

2.

28. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The Al x4 Ga 1-x4 The thickness of the As barrier layer is 100~300nm.

29. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The In x5 Ga 1-x5 In the As quantum well layer, 0.1 ≤ x5 ≤ 0.

3.

30. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The In x5 Ga 1-x5 The thickness of the As quantum well layer is 5~10nm.

31. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The Al y1 Ga 1-y1 In the upper layer of As, 0.1≤y1≤0.

2.

32. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The Al y1 Ga 1-y1 The thickness of the As overlayer is 100~300nm.

33. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The Al y4 Ga 1-y4 The As-P confinement layer contains 0.2 ≤ y4 ≤ 0.5, which is doped with carbon.

34. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 33, characterized in that, The carbon doping concentration is 9E17~5E18 atoms / cm³. 3 .

35. The laser epitaxial structure with a hollow graphene tube mesh embedded in a waveguide structure according to claim 17, characterized in that, The Al y4 Ga 1-y4 The thickness of the As P confinement layer is 1~2 μm.

Images