An electronic ink-based micro-led full-color display method

Abstract

The application discloses a Micro-LED full-color display method based on electronic ink, which controls the magnetic field intensity of a first microcapsule, a second microcapsule and a third microcapsule in the electronic ink microcapsule, and then adjusts the concentration of blue light quantum dots on the right side of the first microcapsule, the concentration of red light quantum dots on the right side of the second microcapsule and the concentration of green light quantum dots on the right side of the third microcapsule, so that the color conversion of each blue light Micro-LED and the control of the color conversion intensity are realized, and the full-color display of the blue light Micro-LED based on the electronic ink is completed. In the application, the particle sizes of the blue light quantum dots, the red light quantum dots and the green light quantum dots are all nanoscale display particles, so that the electronic ink microcapsule has the characteristics of large density, large adjustable range, fast response speed to an electric field and large pixel density, and the display definition is high.

Description

Technical Field

[0001] This invention relates to the field of semiconductor material display manufacturing technology, and in particular to a Micro-LED full-color display method based on electronic ink. Background Technology

[0002] With the continuous development of display technology, the market for small display devices such as AR / VR is expanding rapidly, which in turn puts forward higher technical requirements for the size of a single pixel. Gallium nitride Micro-LED, a third-generation semiconductor material, has advantages in material properties such as wide bandgap, high saturated electron mobility, high thermal conductivity, and low dielectric constant. In terms of luminous performance, it has advantages such as high luminous efficiency, low power consumption, fast response speed, and long lifespan. However, its color conversion rate is not high and its color harmony is not high. The manufacturing process of blue Micro-LED is relatively mature, while green and red Micro-LED have high costs, complex processes, imperfect technology, and large size, resulting in lower pixel density.

[0003] Electronic ink offers numerous advantages, including readability, low cost, and low power consumption. Compared to other display technologies, electronic ink boasts superior reflectivity and contrast; however, its colorization comes at the cost of reduced brightness and resolution, and color filters further increase the thickness of the electronic paper. In existing technologies, electronic ink comprises display particles, an electrophoretic base solution, and a capsule wall material. Encapsulating the display particles and electrophoretic base solution in microcapsules ensures the stability of the stored display particles, preventing particle aggregation and deposition, thereby improving the stability and extending the lifespan of the electronic ink. The display particles are inorganic pigment particles.

[0004] Utilizing the principle of electrophoretic display, electrophoretic display is achieved when an electric field is applied to electronic ink microcapsules. When the electric field is applied in the opposite direction and released, the electronic ink returns to its original state. The display particles in the existing technology are inorganic pigment particles, whose particle size cannot be controlled and ranges from nanometer to micrometer. The size of the display particles directly affects the response speed of the resulting display. When the display particles are large, the electronic ink display speed is slow, the response time is long, and the image clarity of the display device will be very poor. Summary of the Invention

[0005] To address the aforementioned technical problems, this invention provides a Micro-LED full-color display method based on electronic ink, comprising the following steps:

[0006] S1. Prepare nanoscale vertically stacked electronic ink microcapsules, wherein the electronic ink microcapsules include a first microcapsule, a second microcapsule, and a third microcapsule that are stacked and connected from top to bottom and filled with harmonizing particles and a base liquid. The first microcapsule is filled with blue quantum dots, the second microcapsule is filled with red quantum dots, and the third microcapsule is filled with green quantum dots. The harmonizing particles neutralize the blue, red, and green quantum dots in the first, second, and third microcapsules, respectively, so that the electronic ink microcapsules are not electrically conductive.

[0007] S2. Fabrication of blue Micro-LEDs on silicon-based gallium nitride substrates;

[0008] S3. Connect several blue light Micro-LEDs to the circuit board through electrodes, and stack an electronic ink microcapsule on each blue light Micro-LED. Then, set a light-blocking plate above the electronic ink microcapsule to block the light from the left side of the electronic ink microcapsule.

[0009] S4. The circuit board is used to control the light emission of each blue Micro-LED. At the same time, an electric field is applied to the corresponding electrode set on each electronic ink microcapsule to control the electric field strength of the first microcapsule, the second microcapsule, and the third microcapsule. This controls the concentration of blue quantum dots on the right side of the first microcapsule, the concentration of red quantum dots on the right side of the second microcapsule, and the concentration of green quantum dots on the right side of the third microcapsule. This realizes the color conversion of blue light corresponding to each blue Micro-LED and the control of the color conversion intensity, thus completing the full-color display method of Micro-LED based on electronic ink.

[0010] Preferably, the first, second, and third microcapsules are all filled with a dispersant and a surfactant, which are used to disperse and modify blue quantum dots, red quantum dots, and green quantum dots to form nanoscale display particles.

[0011] Preferably, the base liquid is a high-boiling-point organic solvent, which is one of epoxide, n-butane, n-hexane, cyclohexanone, toluene, xylene, sec-butylbenzene, ethyl propionate-3-ethyl ether, propylene glycol ethyl ether, propylene glycol monomethyl ether acetate, tetrachloroethylene, and polychlorotrifluoroethylene.

[0012] Preferably, the blue quantum dots are azo, azo condensation, or heterocyclic blue pigments.

[0013] Preferably, the preparation of the electronic ink microcapsules specifically involves: first, filling the surface of corresponding blended particles with blue quantum dots, red quantum dots, and green quantum dots respectively; then, premixing them with organic solvents, dispersants, and surfactants, and performing dispersion modification to form corresponding nanoscale display particles; finally, forming corresponding first microcapsules, second microcapsules, and third microcapsules by controlling the synthesis process reaction, thereby obtaining electronic ink microcapsules.

[0014] Preferably, the method for fabricating the blue MicroLED includes the following steps:

[0015] S21. Using PECVD technology, a SiO2 sacrificial layer is grown on a silicon-based gallium nitride epitaxial wafer;

[0016] S22. Using FIB technology, an array of nanopillars is formed that penetrate through the SiO2 sacrificial layer, the ITO conductive layer, the p-type gallium nitride layer, the quantum well active layer, and extend to the n-type gallium nitride layer.

[0017] S23. Wet etching is used to remove impurity particles around the nanopillars and repair the etching damage to the sidewalls of gallium nitride and the quantum well active layer.

[0018] S24. SiO2 is spin-coated using the solution gel method to ensure the nanopillars are filled.

[0019] S25. Using ICP technology, the SiO2 layer is thinned to expose the ITO layer at the top of the nanopillars, while ensuring that the ITO layer is not completely etched.

[0020] S26. Using electron beam evaporation technology, an ITO conductive layer is deposited on the top of the nanopillar and then subjected to rapid annealing to form an ohmic contact with p-type gallium nitride.

[0021] S27. To prepare the electrode contact window of n-type gallium nitride, photoresist is spin-coated onto the ITO conductive layer and pre-baked. Then, ultraviolet lithography is used to expose the area near the nanopillars to form a pattern. After development and post-baking, the ITO conductive layer is etched using IBE technology and the SiO2 layer is etched using ICP technology until the n-type gallium nitride layer is exposed, thereby obtaining the electrode contact window of n-type gallium nitride.

[0022] S28. A layer of metal is deposited using thermal evaporation technology as an n-type electrode, and the photoresist and the metal on the photoresist layer are stripped off. The sample is then cleaned and dried.

[0023] S29. Prepare the p-type electrode contact window. After spin-coating photoresist on the ITO conductive layer, perform pre-baking and use ultraviolet lithography to expose the area near the nanopillars to form a pattern. Then, perform development and post-baking.

[0024] S30. A layer of metal is deposited using thermal evaporation technology as a p-type conductive electrode, and the photoresist and the metal on the photoresist layer are stripped away. The sample is then cleaned and dried to obtain a blue MicroLED.

[0025] Preferably, the silicon-based gallium nitride epitaxial wafer is grown using MOCVD technology, and from bottom to top includes a silicon substrate, an undoped gallium nitride layer disposed on the silicon substrate, an n-type gallium nitride layer disposed on the undoped gallium nitride layer, a quantum well active layer disposed on the n-type gallium nitride layer, a p-type gallium nitride layer disposed on the quantum well active layer, and an ITO conductive layer disposed on the p-type gallium nitride layer.

[0026] Preferably, the doping ratio of In atoms in the quantum well active layer is positively correlated with the emission band of the blue Micro-LED.

[0027] Preferably, both the n-type electrode and the p-type electrode are Cr / Au metal electrodes.

[0028] Preferably, the p-type electrode is in contact with the ITO conductive layer, the ITO conductive layer has a thickness of 90 nm, the Cr layer in the p-type electrode has a thickness of 15 nm, and the Au layer in the p-type electrode has a thickness of 60 nm.

[0029] Compared with existing technologies, the present invention provides a method for full-color Micro-LED display based on electronic ink. The method first prepares electronic ink microcapsules with a nanoscale vertical stacking structure. Then, an electric field is applied to the first, second, and third microcapsules within the electronic ink microcapsules, and the electric field strength is controlled. This effectively controls the concentration of blue quantum dots to the right of the first microcapsule, the concentration of red quantum dots to the right of the second microcapsule, and the concentration of green quantum dots to the right of the third microcapsule. By adjusting the concentration of blue quantum dots to the right of the first microcapsule, the concentration of red quantum dots to the right of the second microcapsule, and the concentration of green quantum dots to the right of the third microcapsule, the color conversion and intensity of blue light corresponding to each blue Micro-LED are controlled, thus achieving full-color blue Micro-LED display based on electronic ink. Moreover, the blue, red, and green quantum dots in the electronic ink microcapsules are all nanoscale display particles, giving the electronic ink microcapsules a fast response speed to the electric field and high clarity. Attached Figure Description

[0030] Figure 1 This is a flowchart of a Micro-LED full-color display method based on electronic ink, as described in this invention.

[0031] Figure 2 This is a schematic diagram of the electronic ink microcapsule structure in this invention.

[0032] Figure 3 This is a schematic diagram of the electromagnetic plates on both sides of the electronic ink microcapsule after being energized in this invention.

[0033] Figure 4 This is a schematic diagram of the structure of the blue Micro-LED that causes electronic ink to emit light in this invention.

[0034] In the figure: 1. Electronic ink microcapsule, 11. First microcapsule, 12. Second microcapsule, 13. Third microcapsule, 2. Mixing particles, 3. Blue quantum dot, 4. Red quantum dot, 5. Green quantum dot, 6. Light blocking plate, 7. Circuit board, 8. Blue Micro-LED, 9. Electrode. Detailed Implementation

[0035] To facilitate understanding of the structure and operation of this invention, the invention will be described more fully and carefully below in conjunction with the accompanying drawings and optimized embodiments. However, the scope of protection of this invention is not limited to the specific embodiments described below. It should be noted that, without affecting the performance, the structural features and component dimensions, connection methods, and device sizes in the embodiments of this invention can be changed.

[0036] Unless otherwise defined, all technical terms used below have the same meaning as commonly understood by those skilled in the art. The terms "first," "second," and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely for the purpose of distinguishing corresponding components. Similarly, "a" or "one," and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. Terms such as "connection" or "connection" are not limited to direct connections, but can refer to indirect connections through other intermediate connecting parts. Terms such as "above," "below," "one side," "the other side," "vertical," and "horizontal" are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship also changes accordingly. Figure 3 For example, vertically facing up is "up", vertically facing down is "down", vertically facing left is "left", and vertically facing right is "right".

[0037] like Figures 1-4 As shown, the present invention provides a Micro-LED full-color display method based on electronic ink, the method comprising the following steps:

[0038] S1. Prepare nanoscale vertically stacked electronic ink microcapsules 1. The electronic ink microcapsules 1 include a first microcapsule 11, a second microcapsule 12, and a third microcapsule 13, which are stacked and connected from top to bottom and filled with harmonizing particles 2 and base liquid. The first microcapsule 11 is filled with blue quantum dots 3, the second microcapsule 12 is filled with red quantum dots 4, and the third microcapsule 13 is filled with green quantum dots 5. The harmonizing particles 2 neutralize the blue quantum dots 3, red quantum dots 4, and green quantum dots 5 in the first microcapsule 11, the second microcapsule 12, and the third microcapsule 13, respectively, so that the electronic ink microcapsule 1 is not electrically conductive.

[0039] In this step, the preparation of the electronic ink microcapsule 1 specifically involves: first, filling the surface of the corresponding harmonized particles 2 with blue quantum dots 3, red quantum dots 4, and green quantum dots 5 respectively; then, premixing them with organic solvents, dispersants, and surfactants, and performing dispersion modification to form corresponding nanoscale display particles; finally, forming the corresponding first microcapsule 11, second microcapsule 12, and third microcapsule 13 by controlling the synthesis process reaction, thereby obtaining the electronic ink microcapsule 1. In this step, based on the dispersion modification of blue quantum dots 3, red quantum dots 4, and green quantum dots 5 with dispersants and surfactants, their particle size can be controlled below 100 nm. Therefore, the electronic ink microcapsule 1 has a high density and a wide adjustable range, and it has the characteristics of fast response speed to electric field and high pixel density, thus resulting in high display clarity. In this step, an insulating coating is provided between the first microcapsule 11, the second microcapsule 12, and the third microcapsule 13. Based on the insulating coating, the independent control of the first microcapsule 11, the second microcapsule 12, and the third microcapsule 13 is not affected by other microcapsules.

[0040] S2. Fabrication of a blue Micro-LED8 on a silicon-based gallium nitride substrate, specifically including:

[0041] S21. Using PECVD technology, a SiO2 sacrificial layer is grown on a silicon-based gallium nitride epitaxial wafer;

[0042] S22. Using FIB technology, an array of nanopillars is formed that penetrate through the SiO2 sacrificial layer, the ITO conductive layer, the p-type gallium nitride layer, the quantum well active layer, and extend to the n-type gallium nitride layer.

[0043] S23. Wet etching is used to remove impurity particles around the nanopillars and repair the etching damage to the sidewalls of gallium nitride and the quantum well active layer.

[0044] S24. SiO2 is spin-coated using the solution gel method to ensure the nanopillars are filled.

[0045] S25. Using ICP technology, the SiO2 layer is thinned to expose the ITO layer at the top of the nanopillars, while ensuring that the ITO layer is not completely etched.

[0046] S26. Using electron beam evaporation technology, an ITO conductive layer is deposited on the top of the nanopillar and then subjected to rapid annealing to form an ohmic contact with p-type gallium nitride.

[0047] S27. To prepare the electrode contact window of n-type gallium nitride, photoresist is spin-coated onto the ITO conductive layer and pre-baked. Then, ultraviolet lithography is used to expose the area near the nanopillars to form a pattern. After development and post-baking, the ITO conductive layer is etched using IBE technology and the SiO2 layer is etched using ICP technology until the n-type gallium nitride layer is exposed, thereby obtaining the electrode contact window of n-type gallium nitride.

[0048] S28. A layer of metal is deposited using thermal evaporation technology as an n-type electrode, and the photoresist and the metal on the photoresist layer are stripped off. The sample is then cleaned and dried.

[0049] S29. Prepare the p-type electrode contact window. After spin-coating photoresist on the ITO conductive layer, perform pre-baking and use ultraviolet lithography to expose the area near the nanopillars to form a pattern. Then, perform development and post-baking.

[0050] S30. A layer of metal is deposited using thermal evaporation technology as a p-type conductive electrode, and the photoresist and the metal on the photoresist layer are stripped away. The sample is then cleaned and dried to obtain the blue MicroLED8.

[0051] S3. A number of blue light Micro-LEDs 8 are connected to the circuit board 7 through the electrode 9, and an electronic ink microcapsule 1 is stacked on each blue light Micro-LED 8. Then, a light-blocking plate 6 is set above the electronic ink microcapsule 1 to block the light from the left side of the electronic ink microcapsule 1.

[0052] S4. The circuit board 7 is used to control the light emission of each blue Micro-LED 8. At the same time, an electric field is applied to the corresponding electrode set on each electronic ink microcapsule 1 to control the electric field intensity of the first microcapsule 11, the second microcapsule 12 and the third microcapsule 13 respectively. This controls the concentration of blue quantum dots 3 on the right side of the first microcapsule 11, the concentration of red quantum dots 4 on the right side of the second microcapsule 12 and the concentration of green quantum dots 5 on the right side of the third microcapsule 13 respectively. This realizes the color conversion of blue light corresponding to each blue Micro-LED 8 and the control of the color conversion intensity, thereby completing the Micro-LED full-color display method based on electronic ink.

[0053] In this embodiment, the first microcapsule 11, the second microcapsule 12, and the third microcapsule 13 are all filled with a dispersant and a surfactant. The dispersant and surfactant are used to disperse and modify the blue quantum dots 3, red quantum dots 4, and green quantum dots 5 to form nanoscale display particles. The base liquid is a high-boiling-point organic solvent, which is one of epoxide, n-butane, n-hexane, cyclohexanone, toluene, xylene, sec-butylbenzene, ethyl propionate-3-ethyl ether, propylene glycol ethyl ether, propylene glycol monomethyl ether acetate, tetrachloroethylene, and polychlorotrifluoroethylene. The content of blending particles 2 in the first microcapsule 11, the second microcapsule 12, and the third microcapsule 13 is 0.004% to 6%. The blending particles 2 are azo, azo condensation, or heterocyclic blue pigments.

[0054] In this embodiment, the silicon-based gallium nitride epitaxial wafer is grown using MOCVD technology. From bottom to top, it includes a silicon substrate, an undoped gallium nitride layer on the silicon substrate, an n-type gallium nitride layer on the undoped gallium nitride layer, a quantum well active layer on the n-type gallium nitride layer, a p-type gallium nitride layer on the quantum well active layer, and an ITO conductive layer on the p-type gallium nitride layer. The doping ratio of In atoms in the quantum well active layer is positively correlated with the emission wavelength of the blue Micro-LED8. Both the n-type and p-type electrodes are Cr / Au metal electrodes. The p-type electrode is in contact with the ITO conductive layer, which has a thickness of 90 nm. The Cr layer in the p-type electrode has a thickness of 15 nm, and the Au layer in the p-type electrode has a thickness of 60 nm.

[0055] In this embodiment, firstly, a vertically stacked electronic ink microcapsule 1 is prepared. Blue quantum dots 3, red quantum dots 4, and green quantum dots 5 are filled into the first microcapsule 11, second microcapsule 12, and third microcapsule 13 of the electronic ink microcapsule 1, respectively. Based on dispersants and surfactants, the blue quantum dots 3, red quantum dots 4, and green quantum dots 5 are dispersed and refined into nanoscale display particles, thereby effectively improving the response speed of the electronic ink microcapsule 1 to an electric field. Then, a light-shielding plate 6 is bonded and connected above the electronic ink microcapsule 1 to block the light from the left side of the electronic ink microcapsule 1 (it should be noted that the blocking area of ​​the light-shielding plate 6 is half that of the blue micro-LED 8). The electronic ink microcapsule 1 is then placed on the blue micro-LED 8 connected to a circuit board 7. Finally, the circuit board 7 controls the blue micro-LED 8 to emit light. Simultaneously, an electric field is applied to the first microcapsule 11, second microcapsule 12, and third microcapsule 13 of the electronic ink microcapsule 1. This process is achieved by controlling the first microcapsule 11, second microcapsule 12, and third microcapsule 13 to emit light. The electric field strength on both sides of the second microcapsule 12 and the third microcapsule 13 is controlled, thereby controlling the concentration of blue quantum dots 3 on the right side inside the first microcapsule 11, the concentration of red quantum dots 4 on the right side inside the second microcapsule 12, and the concentration of green quantum dots 5 on the right side inside the third microcapsule 13. As the electric field strength increases, the number of blue quantum dots 3, red quantum dots 4, and green quantum dots 5 that move to the right side inside the first microcapsule 11, the second microcapsule 12, and the third microcapsule 13 gradually increases until they all move to the right side. As the intensity decreases, the corresponding negatively charged blue quantum dots 3, red quantum dots 4, and green quantum dots 5 that have moved to the left side within the first microcapsule 11, the second microcapsule 12, and the third microcapsule 13 gradually decrease until they have all moved to the left side. Therefore, this method adjusts the color of each electronic ink microcapsule 1 by regulating the electric field intensity on both sides of the first microcapsule 11, the second microcapsule 12, and the third microcapsule 13, thereby achieving full-color blue Micro-LED display. This method also features fast response speed and high clarity.

[0056] The present invention provides a detailed description of a Micro-LED full-color display method based on electronic ink. Specific examples have been used to illustrate the principles and implementation methods of the invention. The descriptions of these embodiments are merely for the purpose of helping to understand the core ideas of the invention. It should be noted that those skilled in the art can make various improvements and modifications to the invention without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A method for full-color display of a Micro-LED based on electronic ink, characterized in that, The method includes the following steps: S1. Preparation of nanoscale electronic ink microcapsules, wherein the electronic ink microcapsules comprise a first microcapsule, a second microcapsule, and a third microcapsule stacked and connected from top to bottom and filled with harmonizing particles and a base liquid, wherein the first microcapsule is further filled with blue quantum dots, the second microcapsule is further filled with red quantum dots, and the third microcapsule is further filled with green quantum dots. The harmonizing particles neutralize the blue, red, and green quantum dots in the first, second, and third microcapsules, respectively, so that the electronic ink microcapsules are non-electrically charged. The first, second, and third microcapsules are all filled with dispersants and surfactants, which are used to disperse and modify the blue, red, and green quantum dots to form nanoscale display particles. S2. Fabrication of blue Micro-LEDs on silicon-based gallium nitride substrates; S3. Connect several blue light Micro-LEDs to the circuit board through electrodes, and stack an electronic ink microcapsule on each blue light Micro-LED. Then, set a light-blocking plate above the electronic ink microcapsule to block the light from the left side of the electronic ink microcapsule. S4. The circuit board is used to control the light emission of each blue Micro-LED. At the same time, an electric field is applied to the corresponding electrode set on each electronic ink microcapsule to control the electric field strength of the first microcapsule, the second microcapsule, and the third microcapsule. This controls the concentration of blue quantum dots on the right side of the first microcapsule, the concentration of red quantum dots on the right side of the second microcapsule, and the concentration of green quantum dots on the right side of the third microcapsule. This realizes the color conversion of blue light corresponding to each blue Micro-LED and the control of the color conversion intensity, thus completing the full-color display method of Micro-LED based on electronic ink.

2. The Micro-LED full-color display method based on electronic ink as described in claim 1, characterized in that, The base liquid is a high-boiling-point organic solvent, which is one of the following: epoxide, n-butane, n-hexane, cyclohexanone, toluene, xylene, sec-butylbenzene, ethyl 3-diethyl propionate, propylene glycol ethyl ether, propylene glycol monomethyl ether acetate, tetrachloroethylene, and polychlorotrifluoroethylene.

3. The Micro-LED full-color display method based on electronic ink as described in claim 2, characterized in that, The blue quantum dots are azo, azo condensation, or heterocyclic blue pigments.

4. The Micro-LED full-color display method based on electronic ink as described in claim 3, characterized in that, The preparation of the electronic ink microcapsules is as follows: First, red quantum dots and green quantum dots are filled onto the surface of the corresponding blended particles, respectively; then, they are premixed with organic solvents, dispersants and surfactants, and dispersed and modified to form corresponding nanoscale display particles; finally, the corresponding first microcapsules, second microcapsules and third microcapsules are formed by controlling the synthesis process reaction, thereby obtaining electronic ink microcapsules.

5. The Micro-LED full-color display method based on electronic ink as described in claim 4, characterized in that, The method for fabricating the blue Micro LED includes the following steps: S21. Using PECVD technology, a SiO2 sacrificial layer is grown on a silicon-based gallium nitride epitaxial wafer; S22. Using FIB technology, an array of nanopillars is formed that penetrate through the SiO2 sacrificial layer, the ITO conductive layer, the p-type gallium nitride layer, the quantum well active layer, and extend to the n-type gallium nitride layer. S23. Wet etching is used to remove impurity particles around the nanopillars and repair the etching damage to the sidewalls of gallium nitride and the quantum well active layer. S24. SiO2 is spin-coated using the solution gel method to ensure the nanopillars are filled. S25. Using ICP technology, the SiO2 layer is thinned to expose the ITO layer at the top of the nanopillars, while ensuring that the ITO layer is not completely etched. S26. Using electron beam evaporation technology, an ITO conductive layer is deposited on the top of the nanopillar and then subjected to rapid annealing to form an ohmic contact with p-type gallium nitride. S27. To prepare the electrode contact window of n-type gallium nitride, photoresist is spin-coated onto the ITO conductive layer and pre-baked. Then, ultraviolet lithography is used to expose the area near the nanopillars to form a pattern. After development and post-baking, the ITO conductive layer is etched using IBE technology and the SiO2 layer is etched using ICP technology until the n-type gallium nitride layer is exposed, thereby obtaining the electrode contact window of n-type gallium nitride. S28. A layer of metal is deposited using thermal evaporation technology as an n-type electrode, and the photoresist and the metal on the photoresist layer are stripped off. The sample is then cleaned and dried. S29. Prepare the p-type electrode contact window. After spin-coating photoresist on the ITO conductive layer, perform pre-baking and use ultraviolet lithography to expose the area near the nanopillars to form a pattern. Then, perform development and post-baking. S30. A layer of metal is deposited using thermal evaporation technology as a p-type conductive electrode, and the photoresist and the metal on the photoresist layer are stripped away. The sample is then cleaned and dried to obtain a blue Micro LED.

6. The Micro-LED full-color display method based on electronic ink as described in claim 5, characterized in that, The silicon-based gallium nitride epitaxial wafer is grown using MOCVD technology and comprises, from bottom to top, a silicon substrate, an undoped gallium nitride layer disposed on the silicon substrate, an n-type gallium nitride layer disposed on the undoped gallium nitride layer, a quantum well active layer disposed on the n-type gallium nitride layer, a p-type gallium nitride layer disposed on the quantum well active layer, and an ITO conductive layer disposed on the p-type gallium nitride layer.

7. The Micro-LED full-color display method based on electronic ink as described in claim 6, characterized in that, The doping ratio of In atoms in the quantum well active layer is positively correlated with the emission wavelength of the blue Micro-LED.

8. The Micro-LED full-color display method based on electronic ink as described in claim 7, characterized in that, Both the n-type electrode and the p-type electrode are Cr / Au metal electrodes.

9. The Micro-LED full-color display method based on electronic ink as described in claim 8, characterized in that, The p-type electrode is in contact with the ITO conductive layer, which has a thickness of 90 nm. The Cr layer in the p-type electrode has a thickness of 15 nm, and the Au layer in the p-type electrode has a thickness of 60 nm.

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