A planar micro-nano deposition control method based on glass microprobe

Abstract

The present invention discloses a planar micro-nano deposition control method based on a glass microprobe, comprising the following steps: obtaining base point coordinates of a deposition plane; obtaining and discretizing a two-dimensional deposition path of a model to be deposited; obtaining a plane equation of the deposition plane, substituting the two-dimensional deposition path into the plane equation to obtain a three-dimensional deposition path; moving the probe to a first deposition point for deposition; driving a Z-axis piezoelectric ceramic to move the probe to a Z-axis coordinate jump distance d1 upward of the next deposition point; driving X- and Y-axis piezoelectric ceramics to move the probe above the next deposition point; driving the Z-axis piezoelectric ceramic to move the probe downward to a Z-axis coordinate jump distance d2 upward of the deposition point for deposition; and sequentially performing micro-jump deposition on the remaining deposition points until deposition is completed. By varying the upward jump distance of the Z-axis coordinate, the present invention allows deposition to be performed while maintaining an unbroken micro-liquid bridge connection, resulting in advantages such as uniform deposition structure, high speed, and high precision.

Description

Technical Field

[0001] The present invention belongs to the technical field of additive manufacturing and relates to a planar micro-nano deposition method, and in particular to a planar micro-nano deposition control method based on a glass microprobe. Background Art

[0002] In recent years, with the continuous development of additive manufacturing, 3D printing research has made great progress, but there are still significant limitations at the micro- and nanoscale. Currently, electrochemical deposition technology is widely used at the micro- and nanoscale. This technology mainly uses layer-by-layer deposition for forming. For example, the half-moon droplet confined electrochemical deposition technology mainly uses a continuous and stable micro-liquid bridge between the micropipette outlet and the cathode. The metal ions in the micro-liquid bridge are reduced by the action of an electric field, and the reduced atoms are deposited on the cathode, thus achieving two-dimensional planar manufacturing at the micro- and nanoscale.

[0003] However, the electrochemical deposition currently available is primarily upward growth deposition. When performing lateral deposition based on the horizontality of a two-dimensional micro-nano deposition plane, the deposition plane has a certain inclination. Experimental measurements show that manual leveling still results in a 1° to 4° horizontal error. Directly moving the probe laterally for deposition can easily cause the probe tip to become entangled with the sediment and break, leading to liquid bridge breakage and uneven deposition. Furthermore, using existing point-by-point detection deposition methods can be time-consuming, result in uneven deposits, and produce poor quality. Furthermore, if the distance between the probe tip and the substrate is too small, the deposition morphology can be incomplete, resulting in poor deposition results and even damage to the probe tip.

[0004] Chinese patent ZL202010869933.X discloses a liquid-phase micro-nano processing method and equipment. This method combines liquid-phase nano-processing with a quartz tuning fork to control the nano-glass micro-tubes to directly contact the nano-film for processing on a nano-glass micro-tube-based micro-nano processing device, thereby achieving nano-film graphical processing, solid nano-pore processing, and nano-3D printing. However, in this method, the probe needs to be lifted up again to find the printing position of the next point after each print, which wastes time. At the same time, if two-dimensional plane printing is performed, the horizontality of the printing substrate is not taken into account, which can easily lead to liquid bridge breakage or probe collision, resulting in a low success rate.

[0005] Chinese patent application CN202210266185.5 discloses a two-dimensional structure micro-nanoscale rapid printing system and method based on a glass microprobe. This method mainly uses piezoelectric ceramics and a micromotor to control the movement of the printing probe. The current signal between the probe and the printing substrate is monitored by a signal collector. Based on the current signal feedback, the coordinates of the four corner points of the printing area are obtained. The plane normal vector and the printing scanning path are combined to obtain a composite two-dimensional printing path, and micro-nano-scale printing is achieved point by point on the two-dimensional plane. However, this method focuses on the acquisition of the printing path and does not involve the study of the probe movement mode during the printing process. Summary of the Invention

[0006] In view of this, the present invention provides a planar micro-nano deposition control method based on a glass microprobe, which can achieve rapid and stable lateral growth deposition while maintaining the micro-liquid bridge connection without breaking.

[0007] In order to solve the above technical problems, the present invention proposes a planar micro-nano deposition control method based on a glass microprobe, comprising the following steps:

[0008] S1: Get the base point coordinates (X0, Y0, Z0) of the deposition plane;

[0009] S2: Obtain the two-dimensional deposition path of the model to be deposited, and discretize the two-dimensional deposition path into N deposition points. The coordinates of each deposition point are marked as (X i ,Y i ,Z i ); where 1≤i≤N, and N is a positive integer;

[0010] S3: Obtaining a plane equation of the deposition plane, and substituting the two-dimensional deposition path into the plane equation to obtain a three-dimensional deposition path based on the deposition plane;

[0011] S4: driving the X-axis piezoelectric ceramic and the Y-axis piezoelectric ceramic to move the probe to the coordinate (X1, Y1, Z0+Q) above the first deposition point; where Q is a constant greater than 0, and the probe is located above the conductive substrate;

[0012] S5: Drive the Z-axis piezoelectric ceramic to move the probe downward until the bottom of the probe touches the conductive substrate. The pause time is t _dep to carry out deposition;

[0013] S6: Keep the X-axis and Y-axis coordinates unchanged, drive the Z-axis piezoelectric ceramic, and move the probe to the Z-axis coordinate of the next deposition point where the Z-axis coordinate jumps upward by a distance d1;

[0014] S7: Keeping the Z-axis coordinate unchanged, drive the X-axis piezoelectric ceramic and the Y-axis piezoelectric ceramic to move the probe to the top of the next deposition point;

[0015] S8: Keep the X-axis and Y-axis coordinates unchanged, drive the Z-axis piezoelectric ceramic, and move the probe downward to the Z-axis coordinate of the deposition point where the Z-axis coordinate jumps upward by a distance d2, and pause for a time t _dep Deposition is performed; wherein, d2<d1;

[0016] S9: Repeat steps S6 to S8 to perform micro-jump deposition on the remaining deposition points in sequence until the deposition is completed;

[0017] S10: Drive the Z-axis piezoelectric ceramic to move the probe upward and separate it from the conductive substrate to complete the deposition work.

[0018] Optionally, in step S2, obtaining a two-dimensional deposition path of the model to be deposited includes:

[0019] S21: using the binary image of the model to be deposited as a deposition reference image, using the MS contour extraction algorithm to perform an intersection operation on the inner and outer contours of the deposition reference image to obtain an intersection point set;

[0020] S22: Divide the deposition reference image into multiple sub-regions according to the number of intersection points; connect the intersection points in each sub-region in sequence to form a continuous regional trajectory;

[0021] S23: sorting the regional trajectories into optimal energy trajectories according to the head-to-tail distance of each sub-region;

[0022] S24: Using a point-by-point comparison interpolation algorithm, each regional trajectory is filled to obtain a two-dimensional deposition path.

[0023] Optionally, in step S3, obtaining the plane equation of the deposition plane includes:

[0024] S31: Using the SECCM characteristics of the probe to obtain the spatial coordinates of multiple corner points on the deposition plane;

[0025] S32: Use the SVD plane fitting algorithm to obtain the plane equation.

[0026] Optionally, the jump spacing d1 < R, R is the tip opening radius of the probe; the jump spacing d2 > V m ·t _dep , V m is the deposition movement rate of the probe, t _dep is the deposition pause time.

[0027] Optionally, the pause time t _dep Calculated by the following formula:

[0028] t _dep =H / V m ; Where: H is the thickness of the deposition line, V m is the deposition movement rate of the probe.

[0029] Optionally, the probe is composed of a nano-glass microprobe filled with electrolyte and inserted into a Cu electrode; the deposition movement rate of the probe is V m Calculated by the following formula:

[0030] Where: i is the deposition current, M Cu is the molar mass of Cu, ρ Cu is the density of Cu, n is the number of electrons required for the metal ion to be reduced to an atom, F is the Ferrari constant, D w is the width of the deposition line.

[0031] Optionally, the electrolyte is a CuSO 4 solution, and the concentration of the CuSO 4 solution is 0.0046 mol / L to 0.006 mol / L.

[0032] Optionally, in step S4 , the value of the constant Q is not less than the tilt height difference of the conductive substrate.

[0033] Optionally, the conductive substrate is conductive glass, and the thickness of the gold sprayed on the conductive glass is 180 nm to 230 nm, and the surface roughness is less than 0.01 μm.

[0034] Optionally, the tip opening radius of the nano-microprobe is 4.5 μm to 5.5 μm.

[0035] Compared with the prior art, the planar micro-nano deposition control method based on glass microprobes provided by the present invention achieves at least the following beneficial effects:

[0036] (1) The present invention adopts an adaptive planar micro-jump deposition control method. By changing the upward jump spacing of the Z-axis coordinate, deposition is performed while maintaining the micro-liquid bridge connection. It has the advantages of uniform deposition structure, fast deposition speed, high deposition accuracy, and low deposition failure rate, and can achieve fast and stable lateral growth deposition.

[0037] (2) The control method of the present invention does not need to consider the influence of the horizontality of the conductive substrate on the deposition effect, and can effectively avoid the problem of the probe tip being blocked by the sediment when moving to the next point. At the same time, the deposition effect can be complete by controlling the distance between the probe tip and the conductive substrate.

[0038] (3) The control method of the present invention has a high level of automation, which effectively reduces the operator's leveling and maintenance work on the deposition platform. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a flow chart of the control method provided by the present invention;

[0040] Figure 2It is a schematic diagram of the principle of the control method provided by the present invention;

[0041] Figure 3 is a coordinate diagram of the deposition path in the present invention;

[0042] Figure 4 is an example diagram of the deposition of an image in the present invention;

[0043] Figure 5 is a diagram of the deposition situation using the deposition method of the present invention;

[0044] Figure 6 It is a sedimentation map using the point-by-point sedimentation method;

[0045] Figure 7 This is a diagram of the deposition using the direct lateral deposition method;

[0046] Figure 8 This is a diagram of the probe fracture when using the direct lateral deposition method. DETAILED DESCRIPTION

[0047] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that unless otherwise specifically stated, the relative arrangements of steps and components, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention.

[0048] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. Technologies, methods, and apparatus known to those skilled in the art may not be discussed in detail, but where appropriate, such technologies, methods, and apparatus should be considered part of the specification.

[0049] Example 1

[0050] like Figure 1 and Figure 2 As shown, the present invention provides a planar micro-nano deposition control method based on a glass microprobe, comprising the following steps:

[0051] S1: Obtain the base point coordinates (X0, Y0, Z0) of the deposition plane. The base point coordinates serve as a reference for determining the height of the probe 1 above the first deposition point and are subsequently combined with the normal vector to determine the plane equation.

[0052] S2: Obtain the two-dimensional deposition path of the model to be deposited, and discretize the two-dimensional deposition path into N deposition points. The coordinates of each deposition point are marked as (X i ,Y i ,Z i ); where 1≤i≤N, and N is a positive integer.

[0053] In this step, combine Figure 3 and Figure 4 As shown, obtaining a two-dimensional deposition path of a model to be deposited further includes the following steps:

[0054] S21: Take the binary image of the model to be deposited (in Figure 4 Taking the image shown in the middle left figure as an example, as the deposition reference image, the MS contour extraction algorithm is used to perform intersection calculation on the inner and outer contours of the deposition reference image to obtain a set of intersection points; among them, the line spacing of the contour line is consistent with the line width of the deposition line 3.

[0055] S22: Divide the deposition reference image into multiple sub-regions according to the number of intersection points; and connect the intersection points in each sub-region in sequence to form a continuous regional trajectory.

[0056] S23: sorting the regional trajectories into optimal energy trajectories according to the head-to-tail distances of each sub-region, so as to reduce the idle strokes generated when the probe 1 is running.

[0057] S24: Using a point-by-point comparison interpolation algorithm, each regional trajectory is filled to obtain a two-dimensional deposition path. During this process, the point-by-point comparison interpolation algorithm uses the first point in each row of each subregion as the starting point and the next point as the end point, and derives the deviation discriminant function F. If the deposition point is located on the regional trajectory, then F = 0; if the deposition point is located below the trajectory, then F < 0; if the deposition point is located above the trajectory, then F > 0. As the deposition point advances, the deviation of each new deposition point can be obtained by adding or subtracting the deviation of the previous deposition point and the coordinate value of the end point. Ultimately, the two-dimensional deposition path is divided into several deposition points, which can effectively improve deposition accuracy and quality.

[0058] Therefore, in this step, when discretizing the two-dimensional deposition path, the point-by-point comparison interpolation algorithm of step S24 may be used, or it may be directly determined according to the complexity of the image to be deposited. This embodiment does not impose any specific limitation on this.

[0059] S3: Obtain the plane equation of the deposition plane and substitute the two-dimensional deposition path into the plane equation to obtain a three-dimensional deposition path based on the deposition plane. By combining the extracted two-dimensional deposition path with the plane equation of the deposition plane, the contradiction caused by the change in the distance between the tip of the probe 1 and the conductive substrate 2 during movement can be effectively avoided.

[0060] Since the deposition plane is located at a micro-nano scale, if it cannot be determined that the plane is absolutely smooth and flat, there will be certain errors when measuring the coordinates of the deposition points, resulting in some deposition points being located outside the plane. This requires fitting optimization to minimize the sum of the distances between all deposition points and the deposition plane. Therefore, in some optional embodiments, obtaining the plane equation of the deposition plane further includes the following steps:

[0061] S31: Utilize the SECCM characteristics of probe 1 to obtain the spatial coordinates of multiple corner points on the deposition plane, thereby obtaining the normal vector of the deposition plane. SECCM is a novel scanning probe technology that can simultaneously image the surface topography of the object being studied and obtain information about local electrochemical reactions. Contact between the electrolyte droplet and the sample surface generates a Faraday current, combining measurement and electrochemical deposition.

[0062] S32: Use the SVD (Singular Value Decomposition) plane fitting algorithm to obtain the plane equation. The fitted plane equation is expressed as Ax+By+Cz+H=0, where: x, y, z are the coordinate values of the deposition point, [A BC H] is the coefficient of the deposition plane equation, where (A, B, C) is the normal vector of the deposition plane, and H is obtained by substituting the base point coordinates into the plane equation.

[0063] S4: Drive the X-axis piezoelectric ceramic and the Y-axis piezoelectric ceramic to move the probe 1 to the coordinates (X1, Y1, Z0+Q) above the first deposition point to accommodate the tilt angle θ of the conductive substrate 2 to a certain extent; where Q is a constant greater than 0, and the probe 1 is positioned above the conductive substrate 2. In some optional embodiments, the value of the constant Q is not less than the tilt height difference of the conductive substrate 2 to prevent the tip of the probe 1 from being broken or the micro-liquid bridge from rupturing during the lateral movement deposition process.

[0064] S5: Drive the Z-axis piezoelectric ceramic to move the probe 1 downward until the bottom of the probe 1 contacts the conductive substrate 2. The pause time is t _dep Carry out deposition.

[0065] S6: Keeping the X-axis and Y-axis coordinates unchanged, drive the Z-axis piezoelectric ceramic to move the probe 1 to the Z-axis coordinate of the next deposition point where the Z-axis coordinate jumps upward by a distance d1.

[0066] S7: Keeping the Z-axis coordinate unchanged, drive the X-axis piezoelectric ceramic and the Y-axis piezoelectric ceramic to move the probe 1 to above the next deposition point.

[0067] S8: Keep the X-axis and Y-axis coordinates unchanged, drive the Z-axis piezoelectric ceramic, and move the probe 1 downward to the Z-axis coordinate of the deposition point where the Z-axis coordinate jumps upward by a distance d2, and pause for a time t _dep Deposition is performed to avoid incomplete deposition due to the proximity between the probe 1 and the conductive substrate 2 ; wherein d2 < d1 .

[0068] According to the above steps S6 to S8, while ensuring the connection of the micro-liquid bridge, after each deposition point is deposited, the Z-axis piezoelectric ceramic can be controlled according to the Z-axis reference position of the next deposition point to make the tip of the probe 1 jump, so that there is always a certain safety distance between the tip of the probe 1 and the conductive substrate 2, avoiding the phenomena of incomplete deposition, sediment accumulation, uneven deposition line, etc. when direct planar deposition is performed.

[0069] S9: Repeat steps S6 to S8, and perform micro-jump deposition on the remaining deposition points in turn until the deposition is completed, and you can get Figure 4 Deposition image shown in the middle right.

[0070] S10: Drive the Z-axis piezoelectric ceramic to move the probe 1 upward and separate it from the conductive substrate 2. At this time, the distance between the probe 1 and the conductive substrate 2 can be quickly increased, and the Z-axis piezoelectric ceramic can move to the highest point to complete the deposition work.

[0071] In some optional embodiments, the probe 1 is composed of a nano-glass microprobe filled with electrolyte 4 and inserted with a Cu electrode 5. At this time, the Cu electrode 5 acts as an anode and the conductive substrate 2 acts as a cathode, which has the conditions for forming a Faraday current. The deposition movement rate V of the probe 1 is m Calculated by the following formula:

[0072]

[0073] Where: i is the deposition current, M Cu is the molar mass of Cu, ρ Cu is the density of Cu, n is the number of electrons required for the metal ion to be reduced to an atom, F is the Ferrari constant, and D w is the width of the deposition line 3.

[0074] In some optional embodiments, the pause time t _dep Calculated by the following formula:

[0075] t _dep =H / V m ;

[0076] Where: H is the thickness of the deposition line 3, V m is the deposition movement rate of probe 1.

[0077] In some optional embodiments, the jump spacing d1 is less than R, where R is the opening radius of the tip of the probe 1, to avoid breaking the microfluidic bridge between the tip of the probe 1 and the conductive substrate 2, because the height of the microfluidic bridge is substantially the same as R; the jump spacing d2 is greater than V m ·t _dep , V m is the deposition movement rate of probe 1, t _dep is the deposition pause time, so Vm ·t _dep That is the thickness H of the deposition line 3 mentioned above.

[0078] It should be noted that the piezoelectric ceramics in the X, Y, and Z directions are controlled by a matching piezoelectric ceramic controller, which can realize the operation control of the probe 1 in three-dimensional coordinates. However, the present invention does not improve the piezoelectric ceramics and the probe structure. In order to more intuitively describe the control principle of the present invention, it is not described in detail. Figure 2 The piezoelectric ceramics are schematically illustrated in FIG. 1 and will not be described in detail later.

[0079] Example 2

[0080] This embodiment is an application example of Example 1: electrolyte 4 utilizes a CuSO₄ solution with a concentration of 0.0046 mol / L to 0.006 mol / L; conductive substrate 2 utilizes conductive glass with a gold-sprayed thickness of 180 nm to 230 nm and a surface roughness of less than 0.01 μm; Cu electrode 5 utilizes a copper wire with a purity of 99.99%; and probe 1 utilizes a nano-microprobe with a tip opening radius of 4.5 μm to 5.5 μm. With an AC power supply output frequency of 100 Hz and an amplitude of 400 mVRM, long-segment deposition was performed according to the parameters shown in Table 1. The deposition method of the present invention was compared with a point-by-point deposition method and a direct lateral deposition method.

[0081] Table 1 Sedimentation test comparison table

[0082]

[0083]

[0084] As can be seen from the table above, when the point-by-point deposition method is used for plane deposition, the deposition line has an uneven deposition morphology and is prone to "hollow" structures. When the direct lateral deposition method is used for plane deposition, the tip of the probe is easily blocked by the sediment and broken (e.g. Figure 8 As shown in the figure), the phenomenon of liquid bridge breakage and uneven deposition occurs. However, when the method of the present invention is used for planar deposition, the deposition quality of the deposition line is uniform, the deposition accuracy reaches below 6μm, and the deposition efficiency is more than 3 times higher than that of the point-by-point deposition method.

[0085] The planar micro-nano deposition control method provided by the present invention adopts an adaptive planar micro-jump deposition control method. By changing the upward jump spacing of the Z-axis coordinate, deposition is performed while maintaining an unbroken micro-liquid bridge connection. The method has the advantages of uniform deposition structure, fast deposition speed, and low deposition failure rate. It can achieve rapid and stable lateral growth deposition, and the deposition accuracy can reach below 6 μm. Planar micro-nano structures with a size of tens of microns can be drawn. Moreover, since there is no need to consider the influence of the horizontality of the conductive substrate on the deposition effect, the problem of the probe tip being blocked by sediment when moving to the next point can be effectively avoided. At the same time, the deposition effect can be complete by controlling the distance between the probe tip and the conductive substrate. In addition, the control method has a high level of automation, effectively reducing the operator's leveling and maintenance work on the deposition platform, and is suitable for the manufacture of various types of precision metal microstructures and microcomponents.

[0086] The above embodiments are only for illustrating the technical ideas of the present invention and cannot be used to limit the scope of protection of the present invention. Any changes made on the basis of the technical solutions in accordance with the technical ideas proposed by the present invention fall within the scope of protection of the present invention; any technologies not involved in the present invention can be implemented by existing technologies.

Claims

1. A planar micro-nano deposition control method based on a glass microprobe, characterized in that: The following steps are involved: S1: Get the base point coordinates (X0, Y0, Z0) of the deposition plane; S2: Obtain the two-dimensional deposition path of the model to be deposited, and discretize the two-dimensional deposition path into N deposition points. The coordinates of each deposition point are marked as (X i ,Y i ,Z i ); where 1≤i≤N, and N is a positive integer; S3: Obtaining a plane equation of the deposition plane, and substituting the two-dimensional deposition path into the plane equation to obtain a three-dimensional deposition path based on the deposition plane; S4: driving the X-axis piezoelectric ceramic and the Y-axis piezoelectric ceramic to move the probe to the coordinate (X1, Y1, Z0+Q) above the first deposition point; wherein Q is a constant greater than 0, and the value of the constant Q is not less than the tilt height difference of the conductive substrate, and the probe is located above the conductive substrate; S5: Drive the Z-axis piezoelectric ceramic to move the probe downward until the bottom of the probe contacts the conductive substrate, and the pause time is t _dep to carry out deposition; S6: Keeping the X-axis and Y-axis coordinates unchanged, drive the Z-axis piezoelectric ceramic to move the probe to the Z-axis coordinate of the next deposition point where the Z-axis coordinate jumps upward by a distance d1, and d1 < R, where R is the tip opening radius of the probe; S7: Keeping the Z-axis coordinate unchanged, driving the X-axis piezoelectric ceramic and the Y-axis piezoelectric ceramic to move the probe to above the next deposition point; S8: Keep the X-axis and Y-axis coordinates unchanged, drive the Z-axis piezoelectric ceramic, and move the probe downward to the Z-axis coordinate of the deposition point where the Z-axis coordinate jumps upward by a distance d2, and pause for a time t _dep Deposition is performed; wherein, V m ·t _dep <d2<d1,V m is the deposition movement rate of the probe, t _dep is the deposition pause time; S9: Repeat steps S6 to S8 to perform micro-jump deposition on the remaining deposition points in sequence until the deposition is completed; S10: driving the Z-axis piezoelectric ceramic to move the probe upwards and separate it from the conductive substrate, thereby completing the deposition process.

2. The planar micro-nano deposition control method based on glass microprobe according to claim 1, characterized in that: In step S2, obtaining a two-dimensional deposition path of the model to be deposited includes: S21: using the binary image of the model to be deposited as a deposition reference image, and using the MS contour extraction algorithm to perform an intersection operation on the inner and outer contours of the deposition reference image to obtain an intersection point set; S22: Divide the deposition reference image into a plurality of sub-regions according to the number of intersection points; and connect the intersection points in each sub-region in sequence to form a continuous regional trajectory; S23: sorting the regional trajectories according to the head-to-tail distance of each sub-region; S24: using a point-by-point comparison interpolation algorithm to fill each of the regional trajectories to obtain the two-dimensional deposition path.

3. The planar micro-nano deposition control method based on glass microprobe according to claim 1, characterized in that: In step S3, obtaining the plane equation of the deposition plane includes: S31: using the SECCM characteristics of the probe to obtain the spatial coordinates of multiple corner points of the deposition plane; S32: Using the SVD plane fitting algorithm to obtain the plane equation.

4. The planar micro-nano deposition control method based on glass microprobe according to claim 1, characterized in that: The pause time t _dep Calculated by the following formula: t _dep =H / V m ; Where: H is the thickness of the deposition line, V m is the deposition movement rate of the probe.

5. The planar micro-nano deposition control method based on glass microprobe according to claim 1 or 4, characterized in that: The probe is composed of a nano glass microprobe filled with electrolyte and inserted with a Cu electrode; The probe's deposition movement rate V m Calculated by the following formula: Where: i is the deposition current, M Cu is the molar mass of Cu, ρ Cu is the density of Cu, n is the number of electrons required for the metal ion to be reduced to an atom, F is the Ferrari constant, D w is the width of the deposition line.

6. The planar micro-nano deposition control method based on glass microprobe according to claim 5, characterized in that: The electrolyte is a CuSO4 solution, and the concentration of the CuSO4 solution is 0.0046mol / L to 0.006mol / L.

7. The planar micro-nano deposition control method based on glass microprobe according to claim 1, characterized in that: The conductive substrate is conductive glass, and the thickness of the gold sprayed on the conductive glass is 180nm to 230nm, and the surface roughness is less than 0.01μm.

8. The planar micro-nano deposition control method based on glass microprobe according to claim 5, characterized in that: The tip opening radius of the nano-microprobe is 4.5 μm to 5.5 μm.

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