A superconducting property spatially adjustable filtering structure

Abstract

The present invention discloses a superconducting characteristic spatially adjustable filtering structure, which relates to the field of microwave technology. It includes two relatively arranged first dielectric substrates and second dielectric substrates, and a first layer of resonant components made of superconducting material and a second layer of resonant components are respectively arranged on the first dielectric substrate and the second dielectric substrate; the first layer of resonant components includes first resonant units arranged in a matrix, each first resonant unit includes a square ring group and two bending structures symmetrically arranged on both sides of the square ring group and surrounding the square ring group, and each outer side of each bending structure is connected to a connection line structure; the second layer of resonant components includes second resonant units arranged in a matrix, each second resonant unit corresponds to each first resonant unit one by one, and each second resonant unit includes a cross structure. Based on the spatial filtering structure characteristics and the quench characteristics of superconducting materials, the present invention uses superconducting materials as resonant components and controls the change of the conductivity of superconducting materials by adjusting the external load current intensity to achieve the tuning of filtering characteristics.

Description

Technical Field

[0001] The present invention relates to the field of microwave technology, and particularly to a superconducting characteristic spatially tunable filtering structure. Background Art

[0002] Spatial filtering structures such as frequency selective surfaces (FSS) are composed of metal unit resonant components or open slot units regularly arranged on a dielectric substrate. The shape, arrangement mode of the units, and the electrical properties of the dielectric, etc. will all affect their characteristics.

[0003] Spatial filtering structures are commonly used in the fields of aircraft stealth, electromagnetic compatibility, and electromagnetic shielding. The main principle is to design the required frequency band on the passband and design the frequency band prone to electromagnetic interference as the stopband, so as to facilitate the transmission and reception of signals and the normal operation of equipment. An ideal filtering structure has low loss in the passband, the characteristic of quickly rolling off into the stopband outside the passband, and the lower the stopband transmittance, the better.

[0004] Compared with general metal filters, high-temperature superconducting filters have advantages such as small in-band insertion loss and good out-of-band rejection. Superconducting materials, with their extremely low surface resistance characteristics, have broad application prospects in the fields of passive microwave devices, high-speed transmission lines, superconducting computers, medical instruments, satellite communications, etc. High-temperature superconductors represented by yttrium barium copper oxide (YBCO) have a transition temperature of about 92K and can work in the liquid nitrogen temperature range, greatly reducing the refrigeration cost. Therefore, the devices prepared with high-temperature superconducting materials have superior performance and application value. At the same time, superconducting materials have a critical temperature and a critical current density. With the change of temperature and external load current, their resistivity will also change accordingly. When the temperature is higher than the transition temperature or the external load current exceeds the critical current value, the superconducting material will lose its superconducting characteristics.

[0005] Spatial filtering structures have a profound impact on the aerospace field. Once the traditional filtering structure is designed, its corresponding performance cannot be changed, and the resonant points are not tunable, so there are certain defects. Especially in weapon systems, once its passband and stopband are detected, it loses the protective significance for the aircraft. Summary of the Invention

[0006] The object of the present invention is to provide a superconducting characteristic spatially tunable filtering structure to solve the problems existing in the above-mentioned prior art. Based on the characteristics of the spatial filtering structure and the quench characteristics of superconducting materials, superconducting materials are used as resonant components to achieve the tuning of filtering characteristics.

[0007] To achieve the above object, the present invention provides the following solutions:

[0008] The present invention provides a superconducting property spatially adjustable filtering structure, which includes two relatively arranged first dielectric substrates and second dielectric substrates. On the two opposite side surfaces of the first dielectric substrate and the second dielectric substrate, a first layer of resonant components and a second layer of resonant components made of superconducting materials are respectively arranged; the first layer of resonant components includes a plurality of first resonant units arranged in a matrix. Each first resonant unit includes a square ring group and two bending structures symmetrically arranged on both sides of the square ring group and surrounding the square ring group. The square ring group includes two spaced square rings. Each outer side of each bending structure is connected to a connection line structure, and the two free ends on the inner side are respectively connected to the two square rings; adjacent two first resonant units in the same row are connected through the connection line structure therebetween; the connection line structures on the outer sides of the first resonant units at the same end of each row are connected to each other; the second layer of resonant components includes a plurality of second resonant units arranged in a matrix. Each second resonant unit corresponds to each first resonant unit one by one. The second resonant unit includes a cross structure; adjacent two second resonant units in the same row are connected through the horizontal side of the cross structure; the outer ends of the horizontal sides of the cross structures of the second resonant units at the same end of each row are connected to each other.

[0009] Preferably, a first groove matching the first layer of resonant components is provided on the side surface of the first dielectric substrate, and the first layer of resonant components is arranged in the first groove; a second groove matching the second layer of resonant components is provided on the side surface of the second dielectric substrate, and the second layer of resonant components is arranged in the second groove.

[0010] Preferably, the square ring is a rectangular square ring, the bending structure is a C-shaped bending structure, the vertical side of the bending structure is parallel to the vertical side of the square ring, the horizontal side of the bending structure is parallel to the horizontal side of the square ring, and the distance between the horizontal side of the bending structure and the square ring is equal to the distance between the vertical sides; the outer side of the vertical side of each bending structure is connected to the connection line structure parallel to the horizontal side of the square ring, and the two free ends on the inner side of each bending structure are respectively connected to the two square rings through two vertical connection lines, and the vertical connection lines are parallel to the vertical side of the square ring.

[0011] Preferably, the cross structure is symmetric about its horizontal axis and symmetric about its vertical axis, the vertical side of the cross structure is parallel to the vertical side of the square ring, and the horizontal side of the cross structure is parallel to the horizontal side of the square ring.

[0012] Preferably, liquid nitrogen is uniformly filled between the first dielectric substrate and the second dielectric substrate, and the surfaces of the first layer of resonant components and the second layer of resonant components are in contact with the liquid nitrogen.

[0013] Preferably, the outer long side length of the rectangular square loop is 6.5 mm, and the outer short side length is 2.75 mm; the outer horizontal side length of the bending structure is 3.75 mm, and the outer vertical side length is 8.5 mm; the minimum distance between the two bending structures in the first resonance unit is 1 mm; the length of the connection line structure is 0.75 mm; the width of each side in the square loop and the bending structure, as well as the width of the connection line structure and the vertical connection line, is 0.5 mm.

[0014] Preferably, the horizontal side length of the cross structure is 10 mm, the width is 1 mm, the vertical side length is 7.5 mm, and the width is 0.5 mm.

[0015] Preferably, both the first dielectric substrate and the second dielectric substrate are MgO substrates, and the thickness of both the first dielectric substrate and the second dielectric substrate is 1 mm; the thickness of the first resonance component and the second resonance component, as well as the depth of the first groove and the second groove, is 0.2 mm; the distance between the first dielectric substrate and the second dielectric substrate is 3 mm.

[0016] The present invention has achieved the following technical effects compared with the prior art:

[0017] The present invention provides a superconducting property space-tunable filtering structure. A first resonance component and a second resonance component made of superconducting material are respectively arranged on a first dielectric substrate and a second dielectric substrate. When the structure is placed in a low-temperature environment, the first resonance component and the second resonance component made of superconducting material generate superconducting properties. The two resonance components form two complete closed loops. By independently regulating the external load current intensities of the two loops, the superconducting and normal-conducting states are controlled. The resistivity of the superconducting material in the normal-conducting state is affected by the current intensity, thereby realizing the tuning of the resonance frequency of the space filtering structure. Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required to be used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0019] Figure 1 It is a partial structural schematic diagram of the superconducting property space-tunable filtering structure provided by the present invention;

[0020] Figure 2 It is a structural schematic diagram of the first dielectric substrate corresponding to the first resonance unit in the present invention;

[0021] Figure 3 It is a structural schematic diagram of the second dielectric substrate corresponding to the second resonance unit in the present invention;

[0022] Figure 4 Schematic diagram of the structure of the first dielectric substrate and the first-layer resonant component in the present invention;

[0023] Figure 5 Schematic diagram of the structure of the second dielectric substrate and the second-layer resonant component in the present invention;

[0024] Figure 6 Schematic diagram of the size of the first resonant unit in the present invention;

[0025] Figure 7 Schematic diagram of the size of the second resonant unit in the present invention;

[0026] Figure 8 Schematic diagram of the S11 parameter curve of the superconducting property space-tunable filtering structure provided by the present invention in the superconducting state;

[0027] Figure 9 Schematic diagram of the S21 parameter curve of the superconducting property space-tunable filtering structure provided by the present invention in the superconducting state;

[0028] Figure 10 Schematic diagram of the S11 parameter curve of the TE wave of the superconducting property tunable filtering structure provided by the present invention in the state where the first-layer resonant component is quenched;

[0029] Figure 11 Schematic diagram of the S21 parameter curve of the TE wave of the superconducting property tunable filtering structure provided by the present invention in the state where the first-layer resonant component is quenched;

[0030] Figure 12 Schematic diagram of the S11 parameter curve of the TM wave of the superconducting property tunable filtering structure provided by the present invention in the state where the first-layer resonant component is quenched;

[0031] Figure 13 Schematic diagram of the S21 parameter curve of the TM wave of the superconducting property tunable filtering structure provided by the present invention in the state where the first-layer resonant component is quenched;

[0032] Figure 14 Schematic diagram of the S11 parameter curve of the TE wave of the superconducting property tunable filtering structure provided by the present invention in the state where the second-layer resonant component is quenched;

[0033] Figure 15 Schematic diagram of the S21 parameter curve of the TE wave of the superconducting property tunable filtering structure provided by the present invention in the state where the second-layer resonant component is quenched;

[0034] Figure 16 Schematic diagram of the S11 parameter curve of the TM wave of the superconducting property tunable filtering structure provided by the present invention in the state where the second-layer resonant component is quenched;

[0035] Figure 17 Schematic diagram of the TM-wave S21 parameter curve of the superconducting property adjustable filtering structure provided by the present invention in the quench state of the second-layer resonant component;

[0036] In the figure: 1 - first dielectric substrate, 2 - second dielectric substrate, 3 - first-layer resonant component, 4 - second-layer resonant component, 5 - first resonant unit, 6 - square ring, 7 - bending structure, 8 - connection line structure, 9 - second resonant unit, 10 - cross structure, 11 - first groove, 12 - second groove, 13 - liquid nitrogen, 14 - vertical connection line. Specific embodiments

[0037] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0038] The purpose of the present invention is to provide a superconducting property spatially adjustable filtering structure to solve the problems existing in the prior art. Based on the characteristics of the spatial filtering structure and the quench characteristics of superconducting materials, superconducting materials are used as the resonant components to achieve the tuning of filtering characteristics.

[0039] To make the above objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0040] As Figures 1-7As shown in the figure, this embodiment provides a superconducting property spatially tunable filtering structure, which includes two relatively arranged first dielectric substrates 1 and second dielectric substrates 2. On the two opposite sides of the first dielectric substrate 1 and the second dielectric substrate 2, a first layer of resonant components 3 and a second layer of resonant components 4 made of superconducting material are respectively arranged; the first layer of resonant components 3 includes a plurality of first resonant units 5 arranged in a matrix. Each first resonant unit 5 includes a square loop group and two bending structures 7 symmetrically arranged on both sides of the square loop group and surrounding the square loop group. The square loop group includes two square loops 6 arranged at intervals. A connection line structure 8 is connected to the outside of each bending structure 7, and the two free ends on the inside are respectively connected to the two square loops 6; adjacent two first resonant units 5 in the same row are connected through the connection line structure 8 between them; the connection line structures 8 on the outside of the first resonant units 5 at the same end of each row are connected to each other; the second layer of resonant components 4 includes a plurality of second resonant units 9 arranged in a matrix. Each second resonant unit 9 corresponds to each first resonant unit 5 one by one. The second resonant unit 9 includes a cross structure 10; adjacent two second resonant units 9 in the same row are connected through the horizontal side of the cross structure 10; the outside ends of the horizontal sides of the cross structures 10 of the second resonant units 9 at the same end of each row are connected to each other.

[0041] During the working process, by respectively arranging the first layer of resonant components 3 and the second layer of resonant components 4 made of superconducting material on the first dielectric substrate 1 and the second dielectric substrate 2, and placing this structure in a low-temperature environment to make the first layer of resonant components 3 and the second layer of resonant components 4 made of superconducting material generate superconducting properties. The superconducting material is a YBCO superconductor. The two resonant components can form two complete closed loops. By independently regulating the external load current intensity of the two loops, the superconducting and normal state changes are controlled. The resistivity of the superconducting material in the normal state is affected by the current intensity, and thus the resonant frequency tuning of the spatial filtering structure is realized.

[0042] In this embodiment, a first groove 11 matching the first layer of resonant components 3 is arranged on the side surface of the first dielectric substrate 1, and the first layer of resonant components 3 is arranged in the first groove 11; a second groove 12 matching the second layer of resonant components 4 is arranged on the side surface of the second dielectric substrate 2, and the second layer of resonant components 4 is arranged in the second groove 12, which improves the stability of the structure.

[0043] In this embodiment, the square loop 6 is a rectangular square loop, the bending structure 7 is a C-shaped bending structure. The vertical sides of the bending structure 7 are parallel to the vertical sides of the square loop 6, and the horizontal sides of the bending structure 7 are parallel to the horizontal sides of the square loop 6. The distance between the horizontal sides of the bending structure 7 and the square loop 6 is equal to the distance between the vertical sides; the outside of the vertical sides of each bending structure 7 is connected to a connection line structure 8 parallel to the horizontal side of the square loop 6. The two free ends on the inside of each bending structure 7 are respectively connected to the two square loops 6 through two vertical connection lines 14, and the vertical connection lines 14 are parallel to the vertical sides of the square loop 6.

[0044] The outer long side of the rectangular square loop is 6.5 mm, and the outer short side is 2.75 mm; the outer long side of the horizontal side of the bending structure 7 is 3.75 mm, and the outer long side of the vertical side is 8.5 mm; the minimum distance between the two bending structures 7 in the first resonant unit 5 is 1 mm; the length of the connection line structure 8 is 0.75 mm; the width of each side in the square loop 6 and the bending structure 7, as well as the width of the connection line structure 8 and the vertical connection line 14, is 0.5 mm. Correspondingly, as Figure 6 shown, in the first-layer resonant component 3, the respective dimensions are a = 4 mm, b = 3.75 mm, c = 6.5 mm, d = 2.75 mm, e = 1 mm, f = 0.5 mm, g = 0.5 mm, h = 0.75 mm, i = 0.5 mm.

[0045] In this embodiment, the cross structure 10 is symmetric about its horizontal axis and symmetric about its vertical axis. The vertical side of the cross structure 10 is parallel to the vertical side of the square loop 6, and the horizontal side of the cross structure 10 is parallel to the horizontal side of the square loop 6. The horizontal side length of the cross structure 10 is 10 mm, the width is 1 mm, the vertical side length is 7.5 mm, and the width is 0.5 mm. Correspondingly, as Figure 7 shown, in the second-layer resonant component, the respective dimensions are j = 4.75 mm, k = 3.25 mm, m = 0.5 mm, n = 1 mm.

[0046] In this embodiment, liquid nitrogen 13 is uniformly filled between the first dielectric substrate 1 and the second dielectric substrate 2, and the surfaces of the first-layer resonant component 3 and the second-layer resonant component 4 are in contact with the liquid nitrogen 13. The liquid nitrogen 13 provides a low-temperature environment, enabling the first-layer resonant component 3 and the second-layer resonant component 4 to exhibit superconducting characteristics in the low-temperature environment.

[0047] In this embodiment, both the first dielectric substrate 1 and the second dielectric substrate 2 are MgO substrates, and the thickness of both the first dielectric substrate 1 and the second dielectric substrate 2 is 1 mm; the thickness of the first-layer resonant component 3 and the second-layer resonant component 4, as well as the depth of the first groove 11 and the second groove 12, is 0.2 mm; the distance between the first dielectric substrate 1 and the second dielectric substrate 2 is 3 mm.

[0048] As Figure 8 shown, it is a schematic diagram of the S11 parameter curve of the superconducting characteristic space-adjustable filtering structure provided by the present invention in the superconducting state.

[0049] As Figure 9 shown, it is a schematic diagram of the S21 parameter curve of the superconducting characteristic space-adjustable filtering structure provided by the present invention in the superconducting state.

[0050] As Figure 10As shown, it is a schematic diagram of the S11 parameter curve of the TE wave of the superconducting property adjustable filtering structure provided by the present invention under the normal state loss of the first-layer resonance component 3. When the external load current reaches the critical current, the first-layer resonance component 3 experiences normal state loss, and the conductivity changes with the external load current, significantly affecting the S parameter.

[0051] As Figure 11 shown, it is a schematic diagram of the S21 parameter curve of the TE wave of the superconducting property adjustable filtering structure provided by the present invention under the normal state loss of the first-layer resonance component 3. As the conductivity changes, the curve changes, mainly in terms of peak value changes.

[0052] As Figure 12 shown, it is a schematic diagram of the S11 parameter curve of the TM wave of the superconducting property adjustable filtering structure provided by the present invention under the normal state loss of the first-layer resonance component 3. As the conductivity changes, the curve changes, mainly in terms of peak value changes.

[0053] As Figure 13 shown, it is a schematic diagram of the S21 parameter curve of the TM wave of the superconducting property adjustable filtering structure provided by the present invention under the normal state loss of the first-layer resonance component 3. As the conductivity changes, the curve changes significantly.

[0054] As Figure 14 shown, it is a schematic diagram of the S11 parameter curve of the TE wave of the superconducting property adjustable filtering structure provided by the present invention under the normal state loss of the second-layer resonance component 4. As the normal state loss occurs, the curve changes significantly, but the resistivity has little effect on the curve characteristics within the range of 10 2 -10 5 .

[0055] As Figure 15 shown, it is a schematic diagram of the S21 parameter curve of the TE wave of the superconducting property adjustable filtering structure provided by the present invention under the normal state loss of the second-layer resonance component 4. As the conductivity changes, the curve changes, mainly in terms of peak value changes.

[0056] As Figure 16 shown, it is a schematic diagram of the S11 parameter curve of the TM wave of the superconducting property adjustable filtering structure provided by the present invention under the normal state loss of the second-layer resonance component 4. As the conductivity changes, the curve changes, mainly in terms of peak value changes.

[0057] As Figure 17 shown, it is a schematic diagram of the S21 parameter curve of the TM wave of the superconducting property adjustable filtering structure provided by the present invention under the normal state loss of the second-layer resonance component 4. At this time, the conductivity under the normal state loss has little effect on the position of the resonance point.

[0058] The space-tunable filtering structure based on the characteristics of superconducting materials provided by the present invention can change the characteristics of the S-parameter curve by independently applying currents to two layers of resonant components to cause quenching, realizing the tunable function and improving the overall performance of the space filtering structure.

[0059] Specific examples are applied in the present invention to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A superconducting property spatially adjustable filtering structure, characterized in that: It includes a first dielectric substrate and a second dielectric substrate which are oppositely arranged in two layers. On the two opposite side surfaces of the first dielectric substrate and the second dielectric substrate, a first layer of resonant components and a second layer of resonant components made of superconducting materials are respectively arranged; the first layer of resonant components includes a plurality of first resonant units arranged in a matrix. Each first resonant unit includes a square ring group and two bent structures symmetrically arranged on both sides of the square ring group and surrounding the square ring group. The square ring group includes two square rings arranged at intervals. Each of the outer sides of the bent structures is connected to a connection line structure, and the two free ends on the inner side are respectively connected to the two square rings; adjacent two first resonant units in the same row are connected through the connection line structure between them; the connection line structures on the outer sides of the first resonant units at the same end of each row are connected to each other; the second layer of resonant components includes a plurality of second resonant units arranged in a matrix. Each of the second resonant units corresponds to each of the first resonant units one by one. Each second resonant unit includes a cross structure; adjacent two second resonant units in the same row are connected through the horizontal side of the cross structure; the outer ends of the horizontal sides of the cross structures of the second resonant units at the same end of each row are connected to each other; After the first layer of resonant components and the second layer of resonant components generate superconducting properties, the superconducting and quench state changes are controlled by independently regulating the external load current intensities of the closed loops formed by the first layer of resonant components and the closed loops formed by the second layer of resonant components, and the resistivity of the first layer of resonant components and the second layer of resonant components in the quench state is affected by the current intensity to achieve resonance frequency tuning.

2. The superconducting property spatially adjustable filtering structure according to claim 1, wherein: On the side surface of the first dielectric substrate, a first groove matching the first layer of resonant components is provided, and the first layer of resonant components is arranged in the first groove; on the side surface of the second dielectric substrate, a second groove matching the second layer of resonant components is provided, and the second layer of resonant components is arranged in the second groove.

3. The superconducting property spatially tunable filtering structure according to claim 1, characterized in that: The square ring is a rectangular square ring, the bent structure is a C-shaped bent structure. The vertical side of the bent structure is parallel to the vertical side of the square ring, and the horizontal side of the bent structure is parallel to the horizontal side of the square ring. The distance between the horizontal side of the bent structure and the square ring is equal to the distance between the vertical sides; the outer side of the vertical side of each bent structure is connected to the connection line structure parallel to the horizontal side of the square ring. The two free ends on the inner side of each bent structure are respectively connected to the two square rings through two vertical connection lines, and the vertical connection lines are parallel to the vertical side of the square ring.

4. The superconducting property spatially tunable filtering structure according to claim 1, wherein: The cross structure is symmetric about its horizontal axis and symmetric about its vertical axis. The vertical side of the cross structure is parallel to the vertical side of the square ring, and the horizontal side of the cross structure is parallel to the horizontal side of the square ring.

5. The superconducting property spatially tunable filtering structure according to claim 1, characterized in that: Liquid nitrogen is uniformly filled between the first dielectric substrate and the second dielectric substrate, and the surfaces of the first layer of resonant components and the second layer of resonant components are in contact with the liquid nitrogen.

6. The superconducting property spatially tunable filtering structure according to claim 3, wherein: The outer long side length of the rectangular square loop is 6.5 mm, and the outer short side length is 2.75 mm; the outer long side length of the horizontal side of the bending structure is 3.75 mm, and the outer long side length of the vertical side is 8.5 mm; the minimum distance between the two bending structures in the first resonant unit is 1 mm; the length of the connection line structure is 0.75 mm; the width of each side in the square loop and the bending structure, as well as the width of the connection line structure and the vertical connection line, is 0.5 mm.

7. The superconducting property spatially tunable filtering structure according to claim 4, wherein: The horizontal side length of the cross structure is 10 mm, the width is 1 mm, the vertical side length is 7.5 mm, and the width is 0.5 mm.

8. The superconducting property spatially tunable filtering structure according to claim 2, characterized in that: Both the first dielectric substrate and the second dielectric substrate are MgO substrates, and the thickness of both the first dielectric substrate and the second dielectric substrate is 1 mm; the thickness of the first layer of resonant components and the second layer of resonant components, as well as the depth of the first groove and the second groove, is 0.2 mm; The distance between the first dielectric substrate and the second dielectric substrate is 3 mm.

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