Light emitting display device and compensation method thereof

Abstract

Disclosed is a light emitting display device and a compensation method thereof, in which an optical characteristic detection part overlapping a signal line is provided in a sub-pixel, and the optical characteristic detection part is connected to one of power voltage lines used by the sub-pixel, whereby the optical characteristic of the sub-pixel can be determined without loss of the effective area of a light emitting part, and afterimage of a display panel can be easily compensated.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2021-0194745, filed December 31, 2021, which is incorporated by reference herein as if fully set forth in its entirety. TECHNICAL FIELD

[0002] The present disclosure relates to a display device, and more particularly, to a light emitting display device having a sub-pixel specific detection pattern to monitor a light emitting element in real time and a compensation method thereof. BACKGROUND

[0003] With the advent of the recent full-scale information age, displays capable of visually expressing electrical information signals have rapidly developed. Accordingly, various display devices having excellent properties such as slimness, light weight, and low power consumption have been developed and rapidly replaced conventional cathode ray tubes (CRTs).

[0004] Among display devices, light emitting display devices have been considered as a competitive application in order to achieve compactness of a device and vivid color display without a separate light source.

[0005] A light emitting display device includes a plurality of sub-pixels, wherein each sub-pixel includes a light emitting diode and a circuit configured to drive the light emitting diode. The light emitting display device displays an image as a result of light emission of the light emitting diode. SUMMARY

[0006] Accordingly, the present disclosure is directed to a light emitting display device and a compensation method thereof that substantially obviate one or more problems due to limitations and disadvantages of the related art.

[0007] An object of the present disclosure is to provide a light emitting display device and a compensation method thereof configured such that a detection pattern is provided in a sub-pixel to overlap with a signal line and the detection pattern is detected through a power supply voltage line, thereby achieving real-time compensation while maintaining an effective light emitting area in a display area.

[0008] In a light emitting display device and a compensation method thereof according to the present disclosure, an optical characteristic detection portion overlapping with a signal line is provided in a sub-pixel, and the optical characteristic detection portion is connected to one of power supply voltage lines, thereby it is possible to determine an optical characteristic of the sub-pixel.

[0009] To achieve these objects and other advantages and in accordance with the purpose of the application, as embodied and broadly described herein, a light emitting display device can include a substrate having a plurality of subpixels, each subpixel including a light emitting portion and a pixel circuit; a signal line and a first power voltage line disposed in the pixel circuit, the signal line and the first power voltage line crossing each other; a light emitting element disposed in the light emitting portion, the light emitting element including a first electrode, an organic layer, and a second electrode; a first electrode extension portion integrally formed with the first electrode, the first electrode extension portion extending from the first electrode to overlap at least a portion of the signal line; a connection pattern connected to the first electrode extension portion along the signal line where the first electrode extension portion overlaps; a photovoltaic material disposed between the connection pattern and the first electrode extension portion; and a detection pattern spaced apart from the photovoltaic material, one side of the detection pattern being connected to the first electrode extension portion along the signal line, the other side of the detection pattern being connected to the first power voltage line.

[0010] A compensation method of a light emitting display device can include operating a light emitting element of a light emitting portion in a same subpixel to emit light and generating a photovoltaic signal from a photovoltaic material of a pixel circuit; transmitting the photovoltaic signal from the photovoltaic material to a first power voltage line via a connection pattern and a detection pattern; and detecting, by a driver connected to the first power voltage line, an optical characteristic of the subpixel from which the photovoltaic signal has been generated.

[0011] It is to be understood that both the foregoing general description and the following detailed description of the present disclosure are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF DRAWINGS

[0012] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings:

[0013] Figure 1 is a perspective view illustrating a light emitting display device according to the present disclosure;

[0014] Figure 2 is a plan view illustrating Figure 1 a substrate;

[0015] Figure 3 is a plan view illustrating two adjacent subpixels in a light emitting display device according to an embodiment of the present disclosure;

[0016] Figure 4 is a cross-sectional view taken along line I-I' of Figure 3

[0017] Figure 5 is a cross-sectional view taken along line II-II' of Figure 3 ​a cross-sectional view taken along line II-II' of FIG. 1;

[0018] Figure 6 is a circuit diagram corresponding to one sub-pixel of Figure 3

[0019] Figure 7A and Figure 7B is a view showing an arrangement of a light emitting display device according to another embodiment of the present disclosure; and

[0020] Figure 8 is a flowchart showing a compensation method of a light emitting display device according to the present disclosure. DETAILED DESCRIPTION

[0021] Reference will now be made in detail embodiments of the present application, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. In the following description of the present application, detailed description of known functions and configurations incorporated herein can be omitted when it can make the subject matter of the present application unclear.

[0022] The shapes, sizes, ratios, angles, numbers, etc. shown in the drawings for illustrating various embodiments of the present application are merely for illustration and the present application is not limited to what is shown in the drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. In the following description of the present application, detailed description of the technology or configurations related to the present application can be omitted so as not to unnecessarily obscure the subject matter of the present application. When terms such as "include", "have", and "comprise" are used in the following description, additional components can be present, unless "only" is used. Unless specifically stated otherwise, components described in the singular include plural.

[0023] Components included in the embodiments of the present application should be interpreted to include an error range, even if no additional specific description is added thereto.

[0024] In describing various embodiments of the present application, when terms describing positional relationships such as "on", "above", "below", and "next to" are used, at least one intervening element can be present between two elements, unless "immediately" or "directly" is used.

[0025] In describing various embodiments of the present application, when terms related to temporal relationships such as "after", "subsequently", "next", and "before" are used, discontinuous cases can be included, unless "immediately" or "directly" is used. ​

[0026] In describing various embodiments of the present application, terms such as "first" and "second" can be used to describe various components, but these terms are only intended to distinguish one component from another component. Thus, throughout the specification, unless otherwise specifically mentioned, a "first" component can be the same as a "second" component within the technical idea of the present application.

[0027] Features of various embodiments of the present disclosure can be partially or wholly coupled or combined with each other and can interoperate with each other in various ways and be technically driven. Embodiments of the present disclosure can be executed independently of each other or together in a mutually associated manner.

[0028] Hereinafter, an organic light emitting display device will be mainly described as a light emitting display device according to the present disclosure; however, a material of a light emitting element used in a display device is not limited to an organic material. Depending on the case, a light emitting material can be an organic material, an inorganic material such as a quantum dot semiconductor or a nitride semiconductor, or a compound of an organic material and an inorganic material such as a perovskite.

[0029] Figure 1 is a perspective view showing a light emitting display device according to the present disclosure, and Figure 2 is a plan view showing Figure 1 a substrate of

[0030] As Figure 1 and Figure 2 shown, a light emitting display device 1000 according to the present disclosure can include a display panel 1100, a scan driver 1200, a data driver 1400, a circuit board 1500, and a timing controller 1600. The data driver 1400 can include a flexible film and a driving IC 1300 on the flexible film. The data driver 1400 and / or the circuit board 1500 can function as a driver. As shown, the data driver 1400 can supply a data signal to a plurality of signal lines provided in the display panel 1100 through several blocks, and can detect a sensing signal, or can correspond to all signal lines provided in the panel 1100 so as to perform a function of the data driver. Depending on the case, the data driver 1400 and the circuit board 1500 can be integral, and it can be referred to as a driver.

[0031] The display panel 1100 may include an array substrate 1110 and a counter substrate 1120. Each of the array substrate 1110 and the counter substrate 1120 may include a glass or plastic substrate, and may also include a thin-film transistor array, a color filter array, or an optical film. For example, when the array substrate 1110 includes a plastic substrate, the plastic constituting the substrate may be polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polycarbonate (PC). When the array substrate 1110 includes a plastic substrate, the light-emitting display device 1000 may be implemented as a flexible display device that can be bent or folded. The counter substrate 1120 may include any one of glass, a plastic film, and an encapsulation film. When the counter substrate 1120 is an encapsulation film, the encapsulation film may have a unit structure in which organic and inorganic films are alternately arranged, and the film may be formed on the array substrate 1110 without being bonded to the array substrate 1110.

[0032] The array substrate 1110 is a thin-film transistor substrate on which thin-film transistors are formed. Scan lines, signal lines, and sub-pixels SP are formed on one surface of the array substrate 1110 facing the opposing substrate 1120. The sub-pixels SP are disposed in the area defined by the intersection between the scan lines and the signal lines. The scan lines are connected to the scan driver 1200, and the signal lines are connected to the data driver 1400. In addition, as shown, the scan driver 1200 can be directly mounted in the non-display area NDA of the array substrate 1110, or a separate driver IC or printed circuit film can be connected to the non-display area NDA of the array substrate 1110.

[0033] like Figure 2 As shown, the display panel 1110 can be divided into a display area DA in which subpixels SP are formed to display images and a non-display area NDA in which no images are displayed. Scan lines, signal lines, and subpixels SP can be formed in the display area DA. Scan driver 1200, pads, and connecting lines configured to connect signal lines to the pads can be formed in the non-display area NDA.

[0034] Each sub-pixel SP can be divided into a substantially light-emitting portion EM and a pixel circuit PC disposed outside the light-emitting portion EM, the pixel circuit PC having lines and transistors disposed therein.

[0035] The pixel circuit PC of the sub-pixel SP can include a plurality of transistors as switching elements configured to be turned on to receive a data voltage of the signal line according to a scan signal of the scan line. Each transistor can be a thin film transistor. The transistors of the sub-pixel SP can include the same stack structure having an active layer formed on the same layer or a heterogeneous stack structure having an active layer formed on different layers.

[0036] The light emitting display device according to the disclosure is characterized in that an optical property detection part OPT (see Figure 3 ) is provided in the pixel circuit without loss of the light emitting part EM in each sub-pixel SP.

[0037] Hereinafter, a sub-pixel of the light emitting display device according to the disclosure will be described in detail.

[0038] Figure 3 is a plan view showing two adjacent sub-pixels in the light emitting display device according to the embodiment of the disclosure, Figure 4 is a cross-sectional view taken along a line I-I' of Figure 3 , and Figure 5 is a cross-sectional view taken along a line II-II' of Figure 3 . Figure 6 is a circuit diagram corresponding to one sub-pixel of Figure 3 .

[0039] As shown in Figure 3 to Figure 6 , the light emitting display device according to the disclosure includes a substrate 100 having a plurality of sub-pixels SP each including a light emitting part EM and a pixel circuit PC, a signal line 105 and a first power voltage line 112 provided in the pixel circuit PC, the signal line and the first power voltage line crossing each other, a light emitting element OLED provided in the light emitting part EM, the light emitting element including a first electrode 130, an organic layer 160, and a second electrode 170, and an optical property detection part OPT provided to overlap the signal line 105.

[0040] Here, the optical property detection part OPT can include at least a portion of a first electrode extension part 130e integrally formed with the first electrode 130, the first electrode extension part 130e extending from the first electrode 130 to overlap the signal line 105, a connection pattern 115 overlapping the first electrode extension part 130e along the signal line 105, a photovoltaic material layer 120 provided between the connection pattern 115 and the first electrode extension part 130e, and a detection pattern 135 spaced apart from the photovoltaic material layer 120, one side of the detection pattern being connected to the first electrode extension part 130e along the signal line 105, and the other side of the detection pattern being connected to the first power voltage line 112.

[0041] That is, in the light emitting display device according to the present disclosure, the light emitting material of the light emitting element OLED extends to the optical property detection portion OPT in the pixel circuit. Thus, the light emitted from the specific sub-pixel is received by the optical property detection portion OPT, which converts the light into a photovoltaic signal to determine the optical property of the sub-pixel.

[0042] Here, the optical property detection portion OPT converts the light emitted from the sub-pixel into a current signal through the photovoltaic material layer 120, which is transmitted to the first power voltage line 112 connected to the detection pattern 135 via the detection pattern 135, and can be transmitted to the data driver 1400 connected to the first power voltage line 112 (see Figure 1 ). The current signal can be transmitted from the data driver 1400 to the circuit board 1500.

[0043] As shown in Figure 3 and Figure 4 , the structure extending along the line I-I' of Figure 3 corresponds to the optical property detection portion OPT. This means that the light emitted from the sub-pixel is converted into a photovoltaic signal by the photovoltaic material layer 120, and is detected through the detection pattern 135 and the connection pattern 115 abutting the photovoltaic material layer 120.

[0044] The optical property detection of the sub-pixel by the optical property detection portion OPT can be performed in real time during the driving of the light emitting display device, or the detection pattern 135 connected to the first power voltage line 112 or the driver can sense the properties of the sub-pixel during the mass production of the light emitting display device, whereby the brightness and brightness uniformity of the entire display panel can be adjusted. When the optical properties of the display panel are detected by the optical property detection portion OPT in the sub-pixel during mass production, the properties of the display panel can be detected even if a separate measuring instrument is provided outside the display panel.

[0045] Here, the detection pattern 135 can be made of the same material as the first electrode 130. At this time, the detection pattern 135 can be spaced apart from both the first electrode 130 and the first electrode extension portion 130e. The reason for this is that the detection pattern 135 needs to be electrically spaced apart from the first electrode 130 and the first electrode extension portion 130e to function independently.

[0046] The organic layer 160 can abut the upper surface of the first electrode 130 and the first electrode extension portion 130e, and can not abut the detection pattern 135. The reason for this is that light emitted from the organic layer 160 needs to selectively affect the optical property detection portion OPT overlapping the signal line 105, particularly, the area where the photovoltaic material layer 120 is located. To this end, in the area other than the area where the organic layer 160 of the optical property detection portion OPT abuts the first electrode extension portion 130e, a bank 140 can be further provided between the layers of the first electrode extension portion 130e and the detection pattern 135 and the organic layer 160.

[0047] The photovoltaic material layer 120 can include at least one of PTB7, PTB7-Th, PC 71 BM, PTDB-T, and ITIC. The photovoltaic material layer 120 can be a material corresponding to each of Chemical Formulas 1 to 5.

[0048] [Chemical Formula 1]

[0049]

[0050] [Chemical Formula 2]

[0051]

[0052] [Chemical Formula 3]

[0053]

[0054] [Chemical Formula 4]

[0055]

[0056] [Chemical Formula 5]

[0057]

[0058] However, the material constituting the photovoltaic material layer 120 can not be limited to the material represented by each of Chemical Formulas 1 to 5. Any other material can be used as long as the material has a photovoltaic effect that changes it into a current signal when light is incident on one surface of the material and is capable of generating a current sufficient to sense the amount of light emitted from the sub-pixel.

[0059] In the light emitting display apparatus according to the disclosure, the photovoltaic material layer 120 must receive light emitted from the first electrode extension portion 130e, and thus each of the first electrode 130 and the first electrode extension portion 130e can be a transparent electrode. In this case, each of the first electrode 130 and the first electrode extension portion 130e can be made of a transparent oxide metal such as ITO, IZO, or ITZO. At this time, as described above, the first electrode 130 and the first electrode extension portion 130e can be formed of the same material. Figure 5As shown, light emitted from the organic layer 160 of the light emitting element OLED located in the light emitting portion EM can be emitted to the outside through the substrate 100 via the first electrode 130.

[0060] In this case, the second electrode 170 opposite to the first electrode 130 in the light emitting element OLED can be a reflective electrode made of a reflective metal such as aluminum (Al), silver (Ag), magnesium (Mg), or ytterbium (Yb), or a reflective alloy including at least one of them. Thus, light emitted from the organic layer 160 is emitted to the first electrode 130, while repeatedly reflecting and re-reflecting between the transparent first electrode 130 and the reflective second electrode 170 due to resonance.

[0061] However, the embodiment of the light emitting display apparatus according to the present disclosure is not limited to the case where the first electrode 130 and the first electrode extension portion 130e are the same transparent electrode. The first electrode 130 can include a reflective electrode and a transparent electrode, and the reflective electrode can be removed from the area of the first electrode extension portion 130e corresponding to the photovoltaic material layer 120, such that only the transparent electrode remains, whereby the light emitting element OLED can perform top emission, and light emitted from the organic layer 160 only in the area where the photovoltaic material layer 120 is disposed can be guided to the first electrode extension portion 130e.

[0062] In addition, the detection pattern 135 can be made of the same material as the first electrode 130 and the first electrode extension portion 130e, and can be formed on the same layer as the first electrode 130 and the first electrode extension portion 130e. The reason for this is that the detection pattern 135 needs to be formed at the same time as the first electrode 130 during formation without adding a separate material.

[0063] The detection pattern 135 is configured to sense a photovoltaic signal, i.e., current, generated from the photovoltaic material layer 120, and transmit the photovoltaic signal to the first power voltage line 112 via the connection pattern 115 located below the photovoltaic material layer 120. The detection pattern 135 is positioned to be electrically spaced apart from the first electrode 130 and the first electrode extension portion 130e.

[0064] Not only when the first electrode 130 and the first electrode extension portion 130e are made of the same material and formed on the same layer, but also when the first electrode 130 includes a reflective material, the detection pattern 135 is spaced apart from the first electrode 130 and the first electrode extension portion 130e, unlike the first electrode extension portion 130e.

[0065] The photovoltaic material layer 120 is positioned immediately below the first electrode extension portion 130e to overlap the signal line 105, thereby improving light receiving effects. In addition, the organic layer 160 directly adjoins the first electrode extension portion 130e on the photovoltaic material layer 120, thereby transmitting light emitted from the organic layer 160 to the photovoltaic material layer 120 without any change through the first electrode extension portion 130e.

[0066] The sub-pixel SP can be provided with a bank 140 having a first hole EMH with respect to the light emitting portion EM, so as to separate the light emitting portion EM (see Figure 2 ). In addition to the first hole EMH formed when the bank is provided, the light emitting display device according to the disclosure further includes a second hole PH formed in a region of the bank 140 corresponding to the photovoltaic material layer 120.

[0067] The second hole PH can have a size corresponding to or similar to that of the photovoltaic material layer 120. As long as the photovoltaic material layer 120 is capable of receiving light emitted from the organic layer 160 and converting it into a photovoltaic signal, the second hole PH can have a size different from Figure 4 that of the photovoltaic material layer 120. However, the second hole PH is provided for detection so as to compensate for the sub-pixel when it deteriorates, and does not affect the light emission of the light emitting portion EM.

[0068] The bank 140 is provided between the layers of the first electrode 130 and the first electrode extension portion 130e and the organic layer 160.

[0069] The bank 140 has a first hole EMH configured to expose a region of the light emitting portion corresponding to the first electrode 130 and a second hole PH configured to expose the first electrode extension portion 130e on the connection pattern 115.

[0070] Meanwhile, as Figure 4 indicated, the signal line 105 connected to the data driver according to the disclosure can be positioned lower than the connection pattern 115, the photovoltaic material layer 120, and the first electrode extension portion 130e, to prevent light generated from the organic layer 160 in the second hole PH from leaking below the lower portion and the side of the substrate 100. In addition, it is possible to prevent a current signal generated from the photovoltaic material layer 120 from affecting the lower side of the signal line 105.

[0071] The signal line 105 can be a data line DL, and the first power voltage line 112 can be a reference power voltage line RL configured to supply a reference voltage. In the sub-pixel SP, the first power voltage line 112 can be disposed to cross the signal line 105, or can be connected externally thereto or in a portion of the display area to an extension to the data driver 1400 and the circuit board 1500 (see Figure 1vertical connection lines of the first power supply voltage lines 112. The first power supply voltage lines 112 and the signal lines 105 that cross each other in the sub-pixels are located on different layers.

[0072] A buffer layer (not shown) made of a nitride film, an oxide film, or an oxynitride film can also be provided between the signal lines 105 and the substrate 100, and the buffer layer can have a single-layer structure or a multi-layer structure. The signal lines 105 can be a light-blocking metal. In some cases, a light-blocking metal at the same layer as the signal lines 105 can be further provided under the channels of each of the active layers 125, 127, and 128 of the switching transistor SW, the drive transistor DR, and the sensing transistor SE. The light-blocking metal can block light that enters from the lower side of the substrate 100 from being transmitted to the active layers 125, 127, and 128.

[0073] The connection pattern 115 and the photovoltaic material layer 120 are formed to be adjacent to each other, and a photovoltaic signal is generated in a stacked structure in which the connection pattern 115, the photovoltaic material layer 120, and the first electrode extension portion 130e are connected to each other.

[0074] In addition to the connection between the photovoltaic material layer 120 and the first electrode extension portion 130e, a passivation film 151 and 152 can also be included between the photovoltaic material layer 120 and the first electrode extension portion 130e. The passivation films 151 and 152 can be passivation films configured to protect thin film transistors provided in the pixel circuit PC of the sub-pixel. The first passivation film 151 can be an inorganic film, and the second passivation film 152 thereon can be an organic film, the upper surface of the second passivation film 152 can be planarized. At least one of the first passivation film 151 and the second passivation film 152 can have a multi-layer structure.

[0075] The connection pattern 115 can be connected to the detection pattern 135 through a first contact hole CT1 in the first passivation film 151 and the second passivation film 152. The detection pattern 135 can be connected to the first power supply voltage line 112 through a second contact hole CT2 in the first passivation film 151 and the second passivation film 152.

[0076] The configuration of the pixel circuit PC other than the optical property detection portion OPT will be described.

[0077] The pixel circuit PC includes: a scan line 110 (the scan line can also be denoted as SL) and a sense line 111 (the sense line can also be denoted as SEL) that extend to cross the detection pattern 135 between one side and the other side of the detection pattern 135; a switching transistor SW that is spaced apart from the optical property detection portion OPT while overlapping the scan line 110; a sensing transistor SE that is spaced apart from the optical property detection portion OPT while overlapping the sense line 111; and a drive transistor DR that is spaced apart from the optical property detection portion OPT.

[0078] As Figure 4 illustrated, the scan line 110, the sensing line 111, and the first power supply voltage line 112 can be provided at the same layer. However, embodiments in the present disclosure are not limited thereto. As Figure 4 illustrated, the active buffer layer 107 can be provided between the signal line 105 and the connection pattern 115.

[0079] Here, as Figure 3 to Figure 5 illustrated, the drive transistor DR includes a gate electrode 118 connected to the switching transistor SW, a second active layer 127, a source electrode 119 connected to the first electrode 130 or the first electrode extension portion 130e together with the sensing transistor SE, and a drain electrode 117a opposite to the source electrode 119 based on the gate electrode 118. The drain electrode 117a of the drive transistor is connected to a second power supply voltage line 117 configured to supply a drive power supply voltage EVDD (the second power supply voltage line can also be denoted as EVDDL). The second power supply voltage line 117 can be shared by adjacent sub-pixels. Thus, as Figure 3 illustrated, in the sub-pixel SP, the second power supply voltage line 117 can be formed in parallel with the signal line 105, and the second power supply voltage line 117 has the drain electrode 117a of the drive transistor DR in a direction vertical to the signal line 105. Thus, the drain electrode 117a of the drive transistor DR extends to adjacent left and right sub-pixels in a direction crossing the second voltage line 117. The drain electrode 117a is connected to one side of the second active layer 127 through a fourth contact hole CT4, and the source electrode 119 is connected to the other side of the second active layer 127 through a fifth contact hole CT5. A gate insulating layer 109 can be provided between the second active layer 127 and the gate electrode 118. The fourth contact hole CT4 and the fifth contact hole CT5 can be provided in the gate insulating layer 109. The source electrode 119 of the drive transistor DR can be connected to the sensing transistor SE through an electrode pattern extending from the source electrode 106 of the sensing transistor SE. The electrode pattern from the source electrode 106 of the sensing transistor SE is provided at the same layer as the signal line 105. Further, the source electrode 119 of the drive transistor DR can be connected to the first electrode extension portion 130e through a sixth contact hole CT6. The sixth contact hole CT6 can be provided in the first passivation film 151 and the second passivation film 152.

[0080] In some cases, contrary to the above, the reference numeral 119 can be a drain electrode in the drive transistor DR, and the reference numeral 117 can be a source electrode in the drive transistor DR.

[0081] As Figure 3 and Figure 6As illustrated, the switching transistor SW can include a scan line SL as a gate electrode, a first active layer 125 overlapping the scan line SL, a drain (source) electrode protruding from the signal line 105, and a source (drain) electrode extending from the gate electrode 118 of the driving transistor DR. The source electrode of the switching transistor SW is connected to one side of the first active layer 125 through a third contact hole CT3, and the drain electrode of the switching transistor SW is connected to the other side of the first active layer 125 through a ninth contact hole CT9. As illustrated, Figure 5 As illustrated, the third contact hole CT3 and the ninth contact hole CT9 can be provided as a fourth contact hole CT4 and a fifth contact hole CT5 in the gate insulating layer 109.

[0082] As illustrated, Figure 3 and Figure 6 As illustrated, the sensing transistor SE can include a sensing line SEL as a gate electrode, a third active layer 128 overlapping the sensing line SEL, a drain electrode extending from the first power voltage line 112, and a source electrode 106. The source electrode of the sensing transistor SE is connected to one side of the third active layer 128 through a seventh contact hole CT7, and the drain electrode of the sensing transistor SE is connected to the other side of the third active layer 128 through an eighth contact hole CT8. As illustrated, Figure 5 As illustrated, the seventh contact hole CT7 and the eighth contact hole CT8 can be provided as a fourth contact hole CT4 and a fifth contact hole CT5 in the gate insulating layer 109.

[0083] The source electrode 119 of the driving transistor DR can be connected to the sensing transistor SE through the electrode pattern 106. The electrode pattern 106 is provided at the same layer as the signal line 105.

[0084] The first power voltage line 112 can be connected to a driver including the data driver 1400 and / or the circuit board 1500, whereby a reference power voltage can be supplied to the sub-pixel, and a current or a voltage from the detection pattern 135 can be sensed in different time periods.

[0085] The scan line 110 and the sensing line 111 are located on the same layer as the connection pattern 115, and the passivation films 151 and 152 configured to protect the switching transistor SW, the sensing transistor SE, and the driving transistor DR are provided between the connection pattern 115, the scan line 110, and the sensing line 111 and the detection pattern 135.

[0086] Each of the passivation films 151 and 152 can further include a passivation film hole 150H through which a portion of the photovoltaic material layer 120 is exposed, and the photovoltaic material layer 120 can extend via the passivation film hole 150H to adjoin the first electrode extension portion 130e.

[0087] As illustrated, Figure 3As shown, the connection pattern 115 of the optical property detection part OPT, the photovoltaic material layer 120, and the detection pattern 135 can be provided for each sub-pixel to detect the optical property of each sub-pixel in real time.

[0088] According to circumstances, the optical property detection part OPT can be provided for every two or more sub-pixels to detect the optical property of two or more sub-pixels in real time.

[0089] The photovoltaic material layer 120 can receive light emitted from the organic layer 160, can transmit a photovoltaic signal to the connection pattern 115, and can transmit the photovoltaic signal to the driver including the data driver 1400 and the circuit board 1500 outside the sub-pixel through the detection pattern 135.

[0090] The driver including the data driver 1400 and the circuit board 1500 can be provided therein with a compensation unit configured to compare a current or voltage value read from the sub-pixel SP with a reference value to set a compensation current value and a correction voltage value, and supply a compensated reference power voltage to the first power voltage line.

[0091] Each of the organic layer 160 and the second electrode 170 can be integrally extended from the emission part EM to the photovoltaic material layer 120 of the pixel circuit PC. As shown, Figure 4 and Figure 5 As shown, the organic layer 160 can be formed on the entire display area of the substrate 100, or can be provided in the form of an island in an area including the emission part EM and the optical property detection part OPT for each sub-pixel. In addition to the emission layer, the organic layer 160 can include a hole injection layer configured to inject holes from the first electrode 130, a hole transport layer configured to transport holes from the hole injection layer to the emission layer, an electron transport layer configured to transport electrons to the emission layer, and an electron injection layer configured to inject electrons from the second electrode 170 to the electron transport layer. When the organic layer 160 has a multi-layer structure, only the emission layer is selectively formed so as to be divided for each sub-pixel, and the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer can be integrally formed in the display area DA (see Figure 2 ) without division. The second electrode 170 can be integrally formed in the display area DA without division.

[0092] As shown, Figure 4 The signal line 105 can be positioned closer to the substrate 100 than the connection pattern 115, the photovoltaic material layer 120, and the detection pattern 135 which overlap each other. Accordingly, the signal line 105 can block light directed downward through the second hole PH of the bank, thereby preventing an effect due to a photovoltaic current.

[0093] Meanwhile, asFigure 6 As shown, each sub-pixel can further include a storage capacitor Cst capable of storing a differential voltage between the gate electrode and the source electrode of the drive transistor DR so as to stabilize the characteristics of the pixel circuit during driving of the light emitting element OLED.

[0094] The light emitting element OLED emits light upon receiving a current through the drive transistor DR. The first electrode 130 (see Figure 3 ) of the light emitting element OLED can be connected to the source electrode 119 (see Figure 3 ) of the drive transistor DR, and the second electrode 170 (see Figure 3 ) can be connected to a third power supply voltage line that supplies a low power supply voltage EVSS or a ground voltage outside the display area DA (see Figure 4 ) of the substrate 100 (see Figure 2 ).

[0095] When a voltage is applied to the first electrode 130 and the second electrode 170 of the light emitting diode OLED, holes and electrons move to the light emitting layer via the hole transport layer and the electron transport layer, respectively, and the holes and the electrons combine with each other in the light emitting layer, thereby emitting light.

[0096] The drive transistor DR is disposed between the second power supply voltage line 117 (see Figure 3 ) that supplies a drive power supply voltage EVDD thereto and the light emitting element OLED. The drive transistor DR adjusts a current flowing from the second power supply voltage line 117 to the light emitting element OLED based on a voltage difference between the gate electrode and the source electrode. The gate electrode of the drive transistor DR can be connected to the source electrode of the switching transistor SW, the drain electrode of the drive transistor DR can be connected to the second power supply voltage line 117, and the source electrode of the drive transistor DR can be connected to the first electrode 130 of the light emitting element OLED.

[0097] The switching transistor SW is turned on by the kth scan signal of the kth scan line SL k to supply a voltage to the gate electrode of the drive transistor DR from the jth signal line DL j . The gate electrode of the switching transistor SW can be connected to the kth scan line SL k , the source electrode can be connected to the gate electrode of the drive transistor DR, and the drain electrode can be connected to the jth signal line DL j .

[0098] The sensing transistor SE is turned on by the kth initialization signal of the kth sensing line SE k to connect the qth reference voltage line RL q to the source electrode of the drive transistor DR. The gate electrode of the sensing transistor SE can be connected to the kth sensing line SEk The drain electrode can be connected to the q-th reference voltage line RL q The source electrode can be connected to the drain electrode of the driving transistor DR.

[0099] The storage capacitor Cst stores a difference voltage between the gate voltage of the driving transistor DR and the power supply voltage.

[0100] One side electrode of the storage capacitor Cst can be connected to the gate electrode of the driving transistor DR and the source electrode of the switching transistor SW, and the other side electrode can be connected to the source electrode of the driving transistor DR, the source electrode of the sensing transistor SE, and the first electrode 130 or the first electrode extension portion 130e of the light emitting element OLED.

[0101] In Figure 3 , as an example, the driving transistor DR, the switching transistor SW, and the sensing transistor SE of each of the subpixels SP are shown as N-type semiconductor transistors having N-type semiconductor characteristics; however, the present disclosure is not limited thereto. That is, the driving transistor DR, the switching transistor SW, and the sensing transistor SE of each of the subpixels SP can be P-type semiconductor transistors having P-type semiconductor characteristics.

[0102] Figure 7A and Figure 7B are views showing an arrangement of a light emitting display device according to another embodiment of the present disclosure.

[0103] Figure 7A and Figure 7B are plan views showing a light emitting display device according to another embodiment of the present disclosure, showing an example in which each first subpixel S1 has an optical property detection portion OPT and each second subpixel S2 does not have an optical property detection portion.

[0104] Referring to Figure 7A , the first subpixels S1 and the second subpixels S2 are disposed adjacent to each other while being alternately disposed.

[0105] Referring to Figure 7B , the first subpixels S1 are disposed adjacent to each other, and the second subpixels S2 are disposed adjacent to each other. Figure 7B An example in which the first subpixels S1 and the second subpixels S2 are disposed adjacent to each other two by two is shown; however, the present disclosure is not limited thereto. The first subpixels S1 and the second subpixels S2 can be repeatedly disposed adjacent to each other in three or more to three or more, or the first subpixels S1 and the second subpixels S2 can be repeatedly disposed in different numbers.

[0106] When a larger number of first sub-pixels S1 each having an optical characteristic detection portion OPT are provided in the display area, the optical characteristics of the sub-pixels can be detected in more detail. When an optical characteristic detection portion OPT is provided for each sub-pixel, as Figure 3 indicated, the optical characteristics of each sub-pixel can be detected.

[0107] Meanwhile, in the light emitting display apparatus according to the present disclosure, the optical characteristic detection portion OPT is configured to overlap with a signal line provided for the pixel circuit, and thus the optical characteristics of each sub-pixel can be detected without affecting the area of the light emitting portion EM. Accordingly, in the light emitting display apparatus according to the present disclosure, real-time afterimage compensation can be performed using the detected optical characteristics of each sub-pixel.

[0108] That is, the detection pattern of the optical characteristic detection portion OPT is connected to one of the power voltage lines provided for the sub-pixel. Accordingly, light emitted from a certain sub-pixel is received and converted into a current or voltage signal, which is read by the driver through the power voltage line, and the optical characteristics of the certain sub-pixel are detected based on the change in the current or voltage signal, whereby real-time monitoring can be performed each time the power voltage line is sensed.

[0109] In contrast, the afterimage compensation method using an external compensation circuit is performed at a certain cycle, which is long. Accordingly, defects between the cycles cannot be detected, and thus it is difficult to perform compensation. For example, in general afterimage compensation, data read through the afterimage compensation line is compared with information stored in a lookup table, which is performed at a certain cycle. However, when the environment in which the panel is placed changes, the environment in which the panel is driven changes even if the panel is the same model. Accordingly, in the afterimage compensation method based on comparison using only a predetermined reference value, it is difficult to appropriately compensate for different deterioration due to different environments of each sub-pixel.

[0110] In the present disclosure, an optical characteristic detection portion is provided for each sub-pixel in the display area, whereby the above-described problems can be solved. Accordingly, compared with the method using an external compensation circuit, afterimage compensation and stain compensation are easy, and the accuracy of deterioration compensation is high.

[0111] Hereinafter, a compensation method of a light emitting display apparatus according to the present disclosure will be described.

[0112] Figure 8 is a flowchart illustrating a compensation method of a light emitting display apparatus according to the present disclosure.

[0113] As Figure 8 indicated, the compensation method of the light emitting display apparatus according to the present disclosure is performed in the following order. Hereinafter, a description will be given with reference to the reference numerals mentioned in Figure 1 to Figure 7B .

[0114] First, a scan signal and a data voltage are supplied to a sub-pixel to be detected through a scan line and a signal line of a pixel circuit to operate a light emitting element of a light emitting part in the sub-pixel to emit light, and a photovoltaic signal is generated from a photovoltaic material layer 120 of an optical characteristic detection part in the same sub-pixel (100S). When light is emitted, light emitted from an organic layer of the sub-pixel whose light emitting element is operated is transmitted to the photovoltaic material layer 120 of the optical characteristic detection part below, and the photovoltaic material layer 120 that has received the light generates a current.

[0115] Subsequently, the photovoltaic material layer 120 transmits the current to the first power voltage line 112 via the connection pattern 115 and the detection pattern 135 (110S). At this time, when the sensing transistor SE is turned on, the current generated from the photovoltaic material layer 120 is transmitted to the first power voltage line 112.

[0116] Subsequently, a driver connected to the first power voltage line to supply a first power voltage signal detects an optical characteristic of a sub-pixel from which a photovoltaic signal has been generated (120S). The driver can be a data driver, a power voltage signal generator, or a driver including a timing controller.

[0117] The driver can compare the optical characteristic of the sub-pixel with a reference value, can compensate for a difference between the optical characteristic of the sub-pixel and the reference value based on the optical characteristic of the sub-pixel from which the photovoltaic signal has been generated, and can supply a compensated reference power voltage through the first power voltage line (130S). At this time, a relationship between the optical characteristic of the sub-pixel and a current flowing in the photovoltaic material in response to the characteristic of the sub-pixel is based on data obtained through experiments in advance.

[0118] When a user watches the light emitting display apparatus, a sensing signal is applied to a sensing line to be sensed during a period in which a screen is held between frames, a current generated in the photovoltaic material is checked through the reference power voltage line, and specific data of the current is compared with a reference value to detect a change, thereby checking degradation of the light emitting element.

[0119] Light from a light emitting element of a sub-pixel to be detected can be received by an optical characteristic detection part. When the sub-pixel to be detected is degraded, a signal is detected through the first power voltage line, and a change is detected by the optical characteristic detection part. Accordingly, degradation of the sub-pixel can be detected by the optical characteristic detection part through information about a light emitting characteristic.

[0120] When degradation of the light emitting element is detected, a voltage required to compensate for the degradation is attached to data or a compensated reference voltage is supplied to the sub-pixel through the first power voltage line.

[0121] In the light emitting display device according to the present disclosure, a detection pattern is provided in a pixel circuit without reducing the area of a display area of a substrate, particularly the area of a light emitting portion, wherein the detection pattern is provided in each sub-pixel, thereby enabling real-time compensation for each sub-pixel. In particular, one of the power voltage lines provided in the pixel circuit is used as a device configured to detect the state of the light emitting element, thereby enabling implementation without loss of the light emitting portion compared to a structure in which a separate detection pattern and a separate detection line are provided in the display area.

[0122] Further, in the light emitting display device according to the present disclosure, real-time afterimage compensation can be performed using a composite structure of a photovoltaic material and a light emitting element and one of the power voltage lines.

[0123] In the light emitting display device, a light emitting diode of each sub-pixel emits light. When the light emitting display device is driven, the light emitting efficiency of the light emitting diode directly decreases due to deterioration of the material constituting the light emitting diode or deterioration of elements in the pixel circuit, thereby possibly displaying an afterimage or a stain on the screen. To this end, the light emitting display device requires a compensation mechanism configured to solve the afterimage or stain problem due to deterioration during driving. For a known external compensation mechanism, a configuration substantially ineffective for display is provided in the display area to enable connection with an external compensation circuit, thereby reducing the effective area of the light emitting portion.

[0124] In the light emitting display device according to the present disclosure, afterimage compensation can be performed in real time without adding a separate line, and thus there is no need to provide an additional line for compensation. Accordingly, it is possible to solve the increase in cost caused when an additional line is provided and the effects due to reduction in the effective area.

[0125] An optical characteristic detection portion capable of monitoring the state of the light emitting element in real time can be inserted, and the optical characteristic can be monitored using a photovoltaic material.

[0126] Further, in the light emitting display device according to the present disclosure, information obtained from the photovoltaic material can be received through the first power voltage line, thereby enabling real-time acquisition of sub-pixel specific information.

[0127] In the light emitting display device according to the present disclosure, the optical characteristic can be checked in the panel during production, thereby enabling replacement of the addition of the current afterimage compensation line.

[0128] In the light emitting display device according to the present disclosure, a check pattern capable of checking the characteristics of the organic light emitting element is inserted into the space of the driving circuit.

[0129] Meanwhile, the compensation method of the light emitting display device uses an optical characteristic detection part in a sub-pixel, in which the optical characteristic can be detected in a display panel, and thus compensation can be made during mass production of the display panel which is not mounted to a frame or a system.

[0130] Accordingly, in the compensation method of the light emitting display device according to the disclosure, the light emitting characteristic of each sub-pixel can be sensed without a measuring instrument configured to measure outside of a panel, and thus the brightness and brightness uniformity of the entire panel can be adjusted without a compensation device.

[0131] As is apparent from the above description, the light emitting display device and the compensation method thereof according to the disclosure have the following effects.

[0132] In the light emitting display device according to the disclosure, the optical characteristic detection part is configured to overlap with a signal line provided for a pixel circuit, and thus the optical characteristic of each sub-pixel can be detected without affecting the area of the light emitting part. That is, the detection pattern of the optical characteristic detection part is connected to one of the power voltage lines provided for the sub-pixel. Accordingly, the light emitted from the specific sub-pixel is received and converted into a current or voltage signal, and the optical characteristic of the specific sub-pixel is detected based on the change in the current or voltage signal, and thus real-time monitoring can be made whenever the power voltage line is sensed.

[0133] The light emitting display device according to the embodiment of the disclosure can include a substrate having a plurality of sub-pixels, each sub-pixel including a light emitting part and a pixel circuit; a signal line and a first power voltage line provided in the pixel circuit, the signal line and the first power voltage line crossing each other; a light emitting element provided at the light emitting part, the light emitting element including a first electrode, an organic layer, and a second electrode; a first electrode extension part integral with the first electrode, the first electrode extension part extending from the first electrode to overlap at least a portion of the signal line; a connection pattern along the signal line overlapping the first electrode extension part; a photovoltaic material provided between the connection pattern and the first electrode extension part; and a detection pattern spaced apart from the photovoltaic material, one side of the detection pattern being connected to the first electrode extension part along the signal line, the other side of the detection pattern being connected to the first power voltage line.

[0134] In the light emitting display device according to the embodiment of the disclosure, the detection pattern can be made of the same material as the first electrode, and spaced apart from both the first electrode and the first electrode extension part.

[0135] In the light emitting display device according to the embodiment of the disclosure, the organic layer can contact upper surfaces of the first electrode and the first electrode extension part, and the organic layer can not contact the detection pattern.

[0136] In the light-emitting display device according to the embodiment of the present disclosure, the photovoltaic material can include PTB7, PTB7-Th, PC 71 at least one of BM, PTDB-T, and ITIC.

[0137] The light-emitting display device according to the embodiment of the present disclosure can further include a bank having a first hole exposing a light-emitting portion between the first electrode and the organic layer and a second hole exposing the first electrode extension portion on the connection pattern.

[0138] The light-emitting display device according to the embodiment of the present disclosure can include an optical property detection portion overlapping the signal line. Also, the optical property detection portion can be defined by a detection pattern overlapping the signal line and a connection pattern. The pixel circuit can include a scan line and a sense line extending to cross the detection pattern, a switching transistor spaced apart from the optical property detection portion, the switching transistor overlapping the scan line, a sensing transistor spaced apart from the optical property detection portion, the sensing transistor overlapping the sense line, and a driving transistor spaced apart from the optical property detection portion, the driving transistor including a gate electrode connected to the switching transistor and a source electrode connected to the first electrode or the first electrode extension portion together with the sensing transistor, and a second power supply voltage line for supplying a driving power supply voltage to a drain electrode of the driving transistor.

[0139] In the light-emitting display device according to the embodiment of the present disclosure, the first power supply voltage line can supply a reference power supply voltage, and a voltage of the detection pattern can be sensed in different time periods.

[0140] In the light-emitting display device according to the embodiment of the present disclosure, the scan line and the sense line can be located on the same layer as the connection pattern. The light-emitting display device according to the embodiment of the present disclosure can further include a passivation film disposed between a layer of the connection pattern, the scan line, and the sense line and a layer of the detection pattern, the passivation film for protecting the switching transistor, the sensing transistor, and the driving transistor.

[0141] In the light-emitting display device according to the embodiment of the present disclosure, the passivation film can further include a passivation film hole exposing a portion of the photovoltaic material. Also, the photovoltaic material can contact the first electrode extension portion via the passivation film hole.

[0142] In the light-emitting display device according to the embodiment of the present disclosure, the connection pattern, the photovoltaic material, and the detection pattern can be provided for each sub-pixel.

[0143] In the light-emitting display device according to another embodiment of the present disclosure, the connection pattern, the photovoltaic material, and the detection pattern can be provided for each two or more sub-pixels.

[0144] In the light emitting display device according to the embodiment of the disclosure, the photovoltaic material can receive light emitted from the organic layer, transfer a photovoltaic signal to the connection pattern, and transfer the photovoltaic signal to a driver outside the sub-pixel through the detection pattern.

[0145] In the light emitting display device according to the embodiment of the disclosure, each of the organic layer and the second electrode can integrally extend from the light emitting part to the photovoltaic material of the pixel circuit.

[0146] In the light emitting display device according to the embodiment of the disclosure, when observed in a cross-section, the signal line can be positioned closer to the substrate than the connection pattern, the photovoltaic material, and the detection pattern which overlap each other.

[0147] The compensation method of the light emitting display device according to the embodiment of the disclosure can include operating a light emitting element of a light emitting part in a sub-pixel included in the light emitting display device to emit light, and generating a photovoltaic signal from a photovoltaic material of a pixel circuit in the sub-pixel, transferring the photovoltaic signal from the photovoltaic material to a first power voltage line via a connection pattern and a detection pattern included in the light emitting display device, and detecting an optical characteristic of the sub-pixel from which the photovoltaic signal has been generated by a driver connected to the first power voltage line.

[0148] The compensation method of the light emitting display device according to the embodiment of the disclosure can further include compensating for a difference between the optical characteristic of the sub-pixel and a reference value based on the optical characteristic of the sub-pixel from which the photovoltaic signal has been generated, and supplying the compensated signal to the first power voltage line or the signal line.

[0149] Although the embodiments of the disclosure have been described with reference to the accompanying drawings, the disclosure is not limited to the embodiments and can be implemented in various different forms, and it will be understood by those skilled in the art that the disclosure can be implemented in specific forms other than those specifically set forth herein without departing from the technical idea and essential characteristics of the disclosure. Accordingly, the disclosed embodiments are to be interpreted as illustrative and not restrictive.

Claims

1. A light-emitting display device, comprising: A substrate having multiple sub-pixels, each sub-pixel including a light-emitting part and a pixel circuit; Signal lines and a first power supply voltage line are disposed in the pixel circuit, and the signal lines and the first power supply voltage line intersect each other. A light-emitting element disposed at the light-emitting portion includes a first electrode, an organic layer, and a second electrode; A first electrode extension portion integral with the first electrode, the first electrode extension portion extending from the first electrode to overlap with at least a portion of the signal line; A connection pattern that overlaps with the extension portion of the first electrode along the signal line; Photovoltaic material disposed between the connection pattern and the extension portion of the first electrode; as well as A detection pattern spaced apart from the photovoltaic material, one side of the detection pattern being connected to the extension portion of the first electrode along the signal line, and the other side of the detection pattern being connected to the first power supply voltage line.

2. The light-emitting display device according to claim 1, wherein, The detection pattern is made of the same material as the first electrode and is spaced apart from both the first electrode and the extension of the first electrode.

3. The light-emitting display device according to claim 1, wherein, The organic layer contacts the upper surface of the first electrode and the extension of the first electrode, but does not contact the detection pattern.

4. The light-emitting display device according to claim 1, wherein, The photovoltaic materials include PTB7, PTB7-Th, and PC. 71 At least one of BM, PTDB-T, and ITIC.

5. The light-emitting display device according to claim 2, further comprising a dam having a first hole exposing the light-emitting portion between the first electrode and the organic layer and a second hole exposing the extension portion of the first electrode on the connection pattern.

6. The light-emitting display device according to claim 1, in, The optical characteristic detection section is defined by the detection pattern and the connection pattern that overlap with the signal line, and The pixel circuit includes: The scan lines and sensing lines extend to intersect the detection pattern; A switching transistor spaced apart from the optical property detection section, the switching transistor overlapping the scan line; A sensing transistor spaced apart from the optical characteristic detection section, the sensing transistor overlapping the sensing line; A driving transistor spaced apart from the optical characteristic detection portion, the driving transistor including a gate electrode connected to the switching transistor and a source electrode connected together with the sensing transistor to the first electrode or an extension of the first electrode; and A second power supply voltage line for supplying the drive power supply voltage to the drain electrode of the drive transistor.

7. The light-emitting display device according to claim 6, wherein, The first power supply voltage line supplies a reference power supply voltage and senses the voltage of the detection pattern at different time periods.

8. The light-emitting display device according to claim 6, wherein, The scan lines and the sensing lines are located on the same layer as the connection pattern, and The light-emitting display device further includes a passivation film disposed between the layer of the connection pattern, the scan line and the sensing line and the layer of the detection pattern, the passivation film being used to protect the switching transistor, the sensing transistor and the driving transistor.

9. The light-emitting display device according to claim 8, wherein, The passivation film also includes passivation film pores that expose a portion of the photovoltaic material, and The photovoltaic material contacts the extension portion of the first electrode via the passivation film pores.

10. The light-emitting display device according to claim 1, wherein, The connection pattern, the photovoltaic material, and the detection pattern are set for each sub-pixel.

11. The light-emitting display device according to claim 1, wherein, The connection pattern, the photovoltaic material, and the detection pattern are set for every two or more sub-pixels.

12. The light-emitting display device according to claim 1, wherein, The photovoltaic material receives light emitted from the organic layer, transmits the photovoltaic signal to the connection pattern, and transmits the photovoltaic signal to a driver outside the sub-pixel through the detection pattern.

13. The light-emitting display device according to claim 1, wherein, Each of the organic layer and the second electrode extends integrally from the light-emitting portion to the photovoltaic material of the pixel circuit.

14. The light-emitting display device according to claim 1, wherein, When viewed in cross-section, the signal line is positioned closer to the substrate than the overlapping connection pattern, the photovoltaic material, and the detection pattern.

15. A compensation method for a light-emitting display device according to any one of claims 1 to 14, comprising: The light-emitting element in the light-emitting portion of the sub-pixel included in the light-emitting display device is operated to emit light, and a photovoltaic signal is generated from the photovoltaic material of the pixel circuit in the sub-pixel; The photovoltaic signal from the photovoltaic material is transmitted to the first power supply voltage line via the connection pattern and detection pattern included in the light-emitting display device; as well as The optical characteristics of the sub-pixel from which the photovoltaic signal has been generated are detected by a driver connected to the first power supply voltage line.

16. The compensation method according to claim 15, further comprising: The difference between the optical characteristics of the sub-pixel and the reference value is compensated based on the optical characteristics of the sub-pixel from which the photovoltaic signal has been generated, and the compensated signal is supplied to the first power supply voltage line or signal line.

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