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By depositing silicon layers in two stages with varying densities, the method addresses the challenge of adjusting layer stresses while maintaining optical properties, enhancing precision and reducing particle contamination in semiconductor manufacturing.

DE112023006276T5Pending Publication Date: 2026-05-21ULVAC INC
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Patent Information

Application Number
DE112023006276
Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-12-26
Publication Date
2026-05-21

AI Technical Summary

Technical Problem

Existing methods fail to adjust layer stresses of silicon layers while maintaining the required optical properties, such as refractive index and extinction coefficient, during the deposition process, which is crucial for precise alignment and etching in semiconductor manufacturing.

Method used

The method involves depositing a silicon layer in two steps: first forming a columnar layer with a lower density, followed by a higher density layer, adjusting the sputtering conditions to maintain optical properties and control layer stresses by varying the partial pressure and bias power ratios.

Benefits of technology

This approach allows for precise adjustment of layer stresses while maintaining the desired optical properties, reducing particle contamination and ensuring uniform layer thickness distribution across multiple substrates.

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Abstract

A method for depositing a silicon layer is provided in which the stresses of the layer can be adjusted while maintaining its optical properties. A silicon target (3) and a substrate (Sw) are arranged in a vacuum chamber (1) to form a layer on the substrate. A sputtering gas is introduced into the vacuum chamber (1) in a vacuum atmosphere. The target is charged with electrical energy to form a silicon layer (Sf) on the surface of the substrate by sputtering. The silicon layer deposition is carried out in two independent steps: a first step to deposit a first silicon layer (Sf1) with a columnar structure, and a second step to deposit a second silicon layer (Sf2) with a columnar structure and a higher layer density than the first silicon layer.
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