Gas box, control method of gas box, semiconductor thin film deposition apparatus, and storage medium

By adjusting the fan and exhaust valve to keep the mass flow meter temperature constant, the problem of temperature-dependent thermal mass flow meters is solved, achieving higher process repeatability and film thickness control accuracy.

CN116497343BActive Publication Date: 2026-07-03PIOTECH (SHENYANG) SEMICONDUCTOR EQUIPMENT CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
PIOTECH (SHENYANG) SEMICONDUCTOR EQUIPMENT CO LTD
Filing Date
2023-04-26
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

In existing semiconductor thin film deposition equipment, thermal mass flow meters are greatly affected by temperature, leading to temperature drift and affecting the precise control of film thickness. Existing temperature compensation methods suffer from complex calculations, low real-time control performance, and poor accuracy.

Method used

By adjusting the fan speed and/or the opening of the exhaust valve, the temperature of the mass flow meter is kept constant, reducing the influence of ambient temperature factors and adapting to the needs of cleanroom temperature and plant exhaust speed in different regions.

Benefits of technology

It improves the repeatability and accuracy of process replication, adapts to different environmental conditions, and enhances the control precision of film thickness.

✦ Generated by Eureka AI based on patent content.

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    Figure CN116497343B_ABST
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Abstract

This invention provides a gas chamber, a control method for the gas chamber, a semiconductor thin film deposition apparatus, and a storage medium. The gas chamber is disposed within the semiconductor thin film deposition apparatus and includes multiple gas pipes, a temperature measuring device, at least one fan, an exhaust valve, and a controller. The multiple gas pipes are used to transport the reaction gas and / or carrier gas required for the thin film deposition reaction, and at least one of the gas pipes is connected in series with a mass flow meter. The temperature measuring device is used to acquire the measured temperature of the mass flow meter. The at least one fan is used to exhaust the gas inside the gas chamber. The exhaust valve is located at the exhaust port of the gas chamber. The controller is configured to: acquire the measured temperature of the mass flow meter; and adjust the fan speed and / or the opening of the exhaust valve according to the measured temperature to maintain the temperature of the mass flow meter at a target temperature.
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