A millimeter wave broadband microstrip patch antenna with parasitic patches

Abstract

The application belongs to the technical field of patch antennas, and particularly relates to a millimeter wave broadband microstrip patch antenna with a parasitic patch. The millimeter wave broadband microstrip patch antenna with a parasitic patch is based on a traditional millimeter wave patch antenna, and a parasitic patch unit is introduced to realize a wide working bandwidth of a small-size millimeter wave antenna. The introduction of the parasitic patch unit is equivalent to introducing a second resonance point on the basis of a first resonance point excited by a driving patch unit. By opening a first groove and a second groove on the parasitic patch unit and combining the positions of the first groove and the second groove, the current path of the parasitic patch unit is adjusted, the position of the second resonance point is adjusted, the second resonance point is close to the first resonance point excited by the driving patch, the bandwidth of the millimeter wave antenna is widened, the gain of the millimeter wave antenna remains stable, and a wider working bandwidth in a frequency range of 28.88GHz-35.40GHz is realized.

Description

Technical Field

[0001] This invention belongs to the field of patch antenna technology, and particularly relates to a millimeter-wave broadband microstrip patch antenna with a parasitic patch. Background Technology

[0002] Millimeter-wave antennas occupy an important position in the field of communications, with millimeter waves belonging to the microwave domain. Millimeter waves have three fundamental characteristics: extremely short wavelength, wide bandwidth, and high transmission rate. These characteristics give millimeter waves broad application prospects in numerous fields such as 5G mobile communications, artificial intelligence, and satellite communications. With the advent of the big data era, real-world application scenarios are becoming increasingly complex, and the requirements for data transmission rates and volumes are becoming more stringent, placing higher demands on the bandwidth and other performance characteristics of millimeter-wave antennas. Simultaneously, as devices continue to evolve towards miniaturization, high integration, and portability, millimeter-wave antennas are required to continuously reduce their size while meeting relevant performance requirements.

[0003] In recent years, the requirements for antenna security, anti-interference capability, and transmission rate have become increasingly stringent. Research on how to broaden the bandwidth of millimeter-wave antennas has gradually increased both domestically and internationally. How to increase the operating frequency of antennas and expand the usable spectrum range is also an important topic.

[0004] The following are some commonly used methods to extend the bandwidth of millimeter-wave microstrip patch antennas:

[0005] One approach is to increase antenna bandwidth by using a thicker dielectric substrate with a lower dielectric constant. However, this method increases the size and loss of the antenna, which is detrimental to the miniaturization of the device.

[0006] Another approach is to increase antenna bandwidth by adjusting the shape of the driver patch or etching grooves in the driver patch to change the current path. However, this type of design currently has a narrow bandwidth, reduces antenna gain, and its overly special shape also makes manufacturing difficult.

[0007] The third method involves adding parasitic elements around the driver patch. By coupling the driver patch and the parasitic patch together, the operating bandwidth can be improved. However, this method often results in asymmetry of the added parasitic patch, leading to instability in the operating radiation direction. Setting the driver patch and the parasitic patch on the same layer greatly increases the size of the antenna, which also limits its practical application.

[0008] Existing millimeter-wave antenna designs all have certain problems, which limit their promotion and application. It is necessary to improve existing millimeter-wave broadband microstrip patch antennas to meet development needs. Summary of the Invention

[0009] The purpose of this invention is to provide a millimeter-wave broadband microstrip patch antenna with a parasitic patch, which solves the problem that existing millimeter-wave patch antennas cannot simultaneously meet the requirements of small size, high performance, and stable operation. It has a high operating frequency and high operating bandwidth, and improves the antenna's efficiency in utilizing spectrum resources, information transmission rate, and stability.

[0010] To achieve the above objectives, the present invention adopts the following technical solution:

[0011] A millimeter-wave broadband microstrip patch antenna with a parasitic patch includes a first dielectric substrate and a second dielectric substrate arranged sequentially from top to bottom.

[0012] The first dielectric substrate has a parasitic patch unit on its upper surface, and the parasitic patch unit has a first groove and a second groove. The first groove is located at the edge of the parasitic patch unit and is circumferentially arranged at equal intervals, with the groove opening facing the edge of the first dielectric substrate. The second groove is located at the center of the parasitic patch unit and penetrates through the parasitic patch unit. The second dielectric substrate has a driving patch unit and a power-feeding microstrip line unit on its upper surface, and the center point of the driving patch unit is aligned with the center point of the parasitic patch unit in the vertical direction. One end of the power-feeding microstrip line unit is connected to the driving patch unit, and the other end is connected to an external circuit. The second dielectric substrate has a grounding unit on its lower surface.

[0013] Furthermore, the parasitic patch unit is rectangular, and it has four first grooves, which are located at the midpoints of the four sides of the rectangle.

[0014] Furthermore, the relative dimensions between the parasitic patch unit and the driving patch unit are adjustable.

[0015] Furthermore, both the first groove and the second groove are rectangular grooves.

[0016] This invention provides a millimeter-wave broadband microstrip patch antenna with a parasitic patch. Based on traditional millimeter-wave patch antennas, it achieves a wide operating bandwidth for a small-size millimeter-wave antenna by introducing a parasitic patch unit. In use, the parasitic patch unit is coupled by the driving patch unit, exciting a current opposite to that of the driving patch unit on its surface, generating a multi-resonant circuit. This is equivalent to introducing a second resonant point based on the first resonant point excited by the driving patch unit. By creating a first groove and a second groove on the parasitic patch unit, and by adjusting the positions of the first and second grooves, the current path of the parasitic patch unit can be adjusted, thereby adjusting the position of the second resonant point to be closer to the first resonant point excited by the driving patch. This broadens the bandwidth of the millimeter-wave antenna while maintaining stable gain, achieving a wider operating bandwidth in the 28.88GHz-35.40GHz frequency range.

[0017] Furthermore, in the microstrip patch antenna of the present invention, the relative size between the parasitic patch unit and the driving patch unit is adjustable. By adjusting the relative size between the parasitic patch unit and the driving patch unit, the resonant frequency of the parasitic patch unit is adjusted, and the impedance matching is optimized.

[0018] Compared with existing millimeter-wave broadband microstrip patch antennas with parasitic patches, this invention achieves wide bandwidth operation in the 28.88GHz-35.40GHz frequency band. It has a simple structure, excellent and stable performance within the operating bandwidth, and small size, and has good application prospects. Attached Figure Description

[0019] Figure 1 This is a perspective view of a millimeter-wave microstrip patch antenna according to an embodiment of the present invention;

[0020] Figure 2 This is a front view of a millimeter-wave microstrip patch antenna according to an embodiment of the present invention;

[0021] Figure 3 This is a top view of a millimeter-wave microstrip patch antenna according to an embodiment of the present invention;

[0022] Figure 4 This is a simulation matching diagram of the millimeter-wave patch antenna according to an embodiment of the present invention;

[0023] Figure 5 This is a gain curve diagram of the millimeter-wave patch antenna according to an embodiment of the present invention;

[0024] Figure 6 This is a simulation diagram of the VSWR of the millimeter-wave patch antenna according to an embodiment of the present invention;

[0025] Figure 7 This is a simulated E-plane radiation pattern of the millimeter-wave patch antenna at 32 GHz according to an embodiment of the present invention.

[0026] Figure 8 This is a simulated H-plane radiation pattern of the millimeter-wave patch antenna at 32 GHz according to an embodiment of the present invention.

[0027] The markings in the figure are as follows: 1-First dielectric substrate; 2-Second dielectric substrate; 3-Parasitic patch unit; 4-Drive patch unit; 5-Powered microstrip line unit; 6-Ground unit. Detailed Implementation

[0028] The specific embodiments of the present invention will be further described below with reference to the accompanying drawings. It should be noted that these descriptions are for the purpose of aiding understanding the present invention, but do not constitute a limitation thereof. Furthermore, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0029] It should be understood that the terminology used in this specification is for describing specific embodiments only and is not intended to limit the invention. All terms used in this specification (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. For the sake of brevity and / or clarity, well-known functions or structures may not be described in detail.

[0030] Unless otherwise specified, the singular forms “a,” “the,” and “the” used in this specification include the plural forms. The terms “comprising,” “including,” and “containing” used in this specification indicate the presence of the claimed feature but do not exclude the presence of one or more other features. The term “and / or” used in this specification includes any and all combinations of one or more of the related listed aspects.

[0031] In the specification, spatial relation terms such as "up," "down," "left," "right," "front," "back," "high," and "low" describe the relationship between one feature and another in the accompanying drawings. It should be understood that spatial relation terms include not only the orientation shown in the drawings but also different orientations of the device during use or operation. For example, when the device in the drawings is inverted, a feature previously described as "below" other features can now be described as "above" other features. The device can also be oriented in other ways (rotated 90° or in other orientations), in which case the relative spatial relationships will be explained accordingly.

[0032] It should be understood that while the terms first, second, etc., may be used herein to describe various elements, these elements should not be limited by these terms. These are merely used to distinguish one element from another. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element, without departing from the scope of the invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0033] In all the accompanying drawings, the same reference numerals denote the same elements. For clarity, the dimensions of certain features may be altered in the drawings.

[0034] Example

[0035] like Figure 1 , Figure 2 , Figure 3 As shown, this embodiment provides a millimeter-wave broadband microstrip patch antenna with a parasitic patch, which includes a first dielectric substrate 1 and a second dielectric substrate 2 arranged sequentially from top to bottom.

[0036] The first dielectric substrate 1 has a parasitic patch unit 3 on its upper surface. The parasitic patch unit 3 has a first groove and a second groove on its upper surface. The first groove is located at the edge of the parasitic patch unit 3, and is circumferentially spaced at equal intervals, with its opening facing the edge of the first dielectric substrate 1. The second groove is located at the center of the parasitic patch unit 3 and penetrates through it. The second dielectric substrate 2 has a driving patch unit 4 and a power-feeding microstrip line unit 5 on its upper surface. The driving patch unit 4 is aligned vertically with the parasitic patch unit 3. One end of the power-feeding microstrip line unit 5 is connected to the driving patch unit 4, and the other end is connected to an external circuit. The second dielectric substrate 2 has a grounding unit 6 on its lower surface.

[0037] In this embodiment, all structures adopt a rectangular structure. The center points of the first dielectric substrate 1, the second dielectric substrate 2, the grounding unit 6, and the second groove coincide in the vertical direction. The first dielectric substrate 1 and the second dielectric substrate 2 have the same dimensions. The parasitic patch unit 3 is rectangular, with four first grooves located at the midpoints of the four sides of the rectangle. Both the first and second grooves are rectangular slots. The dimensions of each structure in the millimeter-wave broadband microstrip patch antenna of this embodiment are as follows:

[0038] Preferably, in this embodiment, both the first dielectric substrate 1 and the second dielectric substrate 2 are cuboids with square top and bottom surfaces, each measuring 3mm*3mm*0.256mm. The first dielectric substrate 1 and the second dielectric substrate 2 are made of Rogers RO3010 with a dielectric constant of 10.2 and a loss tangent of 0.0035°. The driving patch unit 4 measures 1.2mm*1.6mm*0.035mm and is a second rectangular metal patch. The center of the driving patch unit 4 is coaxial with the center of the second dielectric substrate 2. The feed microstrip line unit 5 has a length of 0.25λ, a width of 0.224mm, and a thickness of 0.035mm, where λ is the air wavelength. The width of the feed microstrip line unit 5 is 50Ω to meet the impedance matching requirements of the microstrip patch antenna. The feeding microstrip line unit 5 is used to provide a feeding signal to the driving patch unit 4. After receiving the feeding signal, the driving patch unit 4 generates a corresponding waveguide mode. The waveguide mode is used to excite a first resonant frequency related to the size of the driving patch unit 4 on the surface of the driving patch unit 4. The resonant frequency generated by the driving patch unit 4 is adjusted by adjusting the dimensions of each side of the driving patch unit 4.

[0039] In this embodiment, the parasitic patch unit 3 is larger than the driving patch unit 4. The dimensions of the parasitic patch unit 3 are 1.05mm * 2.5mm * 0.035mm. The addition of the parasitic patch unit 3 modifies the equivalent resonant circuit of the entire microstrip patch antenna, making it a multi-resonant circuit. The dimensions of the rectangular slot in the middle of the parasitic patch unit 3 are 0.45mm * 0.4mm * 0.035mm, the dimensions of the rectangular slot on the long side of the parasitic patch unit 3 are 0.14mm * 0.1mm * 0.035mm, and the dimensions of the rectangular slot on the short side of the parasitic patch unit 3 are 0.5mm * 0.05mm * 0.035mm. The adjustment of the rectangular slot in the parasitic patch unit 3 changes the current path excited by the parasitic patch unit 3, thereby affecting the excited second resonant point.

[0040] Parasitic patch unit 3 is coupled to driving patch unit 4, generating a current opposite to that of driving patch unit 4 within parasitic patch unit 3. This increases the reflection coefficient in the corresponding wavelength band, and parasitic patch unit 3 introduces a second resonant point. The frequency of the second resonant point can be adjusted by changing the size of parasitic patch unit 3. Simultaneously, rectangular grooves are etched at the center and midpoints of the four sides of parasitic patch unit 3, maintaining its symmetry. The performance of parasitic patch unit 3 can be adjusted by changing the size of these rectangular grooves. The etched grooves can block or alter the current path, affecting the current distribution on the surface of parasitic patch unit 3 and further optimizing the electromagnetic coupling between parasitic patch unit 3 and driving patch unit 4. By bringing the second resonant point excited by parasitic patch unit 3 closer to the first resonant point generated by driving patch unit 4, the bandwidth is expanded.

[0041] In this embodiment, the grounding unit 6 has the same size and shape as the lower surface of the second dielectric substrate 2, and is coaxially overlapped with the center of the second dielectric substrate 2, with a size of 3mm*3mm*0.035mm.

[0042] In use, the microstrip patch antenna of this embodiment first feeds the driving patch unit 4 through the feeding microstrip line unit 5, and the signal is transmitted to the driving patch unit 4, exciting a first resonant point of 30.3 GHz. This mode signal is coupled to the parasitic patch unit 3 through the driving patch unit 4. The rectangular slot on the parasitic patch unit 3 affects the coupling, thereby exciting a second resonant point of 34.3 GHz for the parasitic patch unit 3. Under the combined effect of the first and second resonant points, the operating bandwidth of the microstrip patch antenna is widened and the performance is improved. It should be noted that, to simplify the manufacturing process, in this embodiment, the parasitic patch unit, driving patch unit, feeding microstrip line unit, and grounding unit are all implemented using rectangular metal patches.

[0043] Simulation Experiment

[0044] Simulation experiments were conducted on the microstrip patch antenna of the above dimensions at a center frequency of 32 GHz.

[0045] Figure 4 The figure shows the simulation results of the matching response of the millimeter-wave broadband microstrip patch antenna with parasitic patch in Example 1. As can be seen from the figure, in the frequency range of 28.88GHz-35.40GHz, its relative bandwidth reaches a maximum of 20.37%, which is much greater than the bandwidth of existing millimeter-wave microstrip antennas. Figure 5 The figure shows the simulation results of the gain curve of the microstrip patch antenna, with a gain of 5.0 dBi at the center frequency. Figure 6 The image shows a simulation of the VSWR of a microstrip patch antenna, with a VSWR of 1.47 at the center frequency. Figure 7 and Figure 8 These are the E-plane and H-plane radiation patterns of the microstrip patch antenna at 32 GHz, respectively.

[0046] Experiments demonstrate that the microstrip patch antenna tested here operates at a high center frequency of 32 GHz with a bandwidth of 20.37%, achieving the design goals of high operating frequency and wide bandwidth. This results in better security, faster transmission rates, and lower power consumption. Within the operating bandwidth, the gain remains stable around 5 dBi, and the VSWR is less than 1.5, maintaining stable performance and allowing for the transmission or reception of a wider range of signals. Furthermore, the overall dimensions of this antenna are only 3 mm * 3 mm * 0.617 mm, meeting the requirements for small-size design and easy integration.

[0047] In summary, this embodiment proposes a millimeter-wave broadband microstrip patch antenna with a parasitic patch. Its high operating frequency and high bandwidth significantly improve upon the problems of low operating frequency, limited spectrum resource utilization, and slow information transmission speed in existing technologies. It possesses advantages such as high operating frequency, wide operating bandwidth, stable performance within the operating bandwidth, and small size. It has great application potential.

[0048] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. For those skilled in the art, various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and these variations still fall within the protection scope of the present invention.

Claims

1. A millimeter-wave broadband microstrip patch antenna with a parasitic patch, comprising a first dielectric substrate and a second dielectric substrate arranged sequentially from top to bottom, characterized in that: The first dielectric substrate has a parasitic patch unit on its upper surface. The parasitic patch unit is rectangular and has four first grooves and one second groove. The first grooves are located at the edge of the parasitic patch unit and are equidistantly arranged around the periphery, that is, they are located at the midpoint of the four sides of the rectangle respectively. The opening of the groove faces the edge of the first dielectric substrate. The second groove is located at the center of the parasitic patch unit and extends through the parasitic patch unit; the upper surface of the second dielectric substrate is provided with a driving patch unit and a power-fed microstrip line unit, and the center point of the driving patch unit is aligned with the center point of the parasitic patch unit in the vertical direction. One end of the power-fed microstrip line unit is connected to the driving patch unit, and the other end is connected to the external circuit. The lower surface of the second dielectric substrate is provided with a grounding unit.

2. The millimeter-wave broadband microstrip patch antenna with a parasitic patch according to claim 1, characterized in that: The relative dimensions between the parasitic patch unit and the driving patch unit are adjustable.

3. A millimeter-wave broadband microstrip patch antenna with a parasitic patch according to claim 2, characterized in that: The size of the parasitic patch unit is larger than the size of the driving patch unit.

4. A millimeter-wave broadband microstrip patch antenna with a parasitic patch according to claim 1, characterized in that: Both the first groove and the second groove are rectangular grooves.

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