Reaction chamber for semiconductor waste gas treatment equipment and semiconductor waste gas treatment equipment

Abstract

The present application provides a reaction chamber for semiconductor waste gas treatment equipment and semiconductor waste gas treatment equipment, the reaction chamber comprising: a reaction chamber body, which is cylindrical, and the waste gas generated by the semiconductor process is generated in the reaction chamber body; a water balancing ring, which is array-shaped and arranged on the top of the inner wall of the reaction chamber body along the circumference of the reaction chamber body, and is used to balance the overflow water entering the reaction chamber body so that the overflow water evenly covers the entire inner wall of the reaction chamber body; the setting height of the water balancing ring is: h≥h 水 =Q 进水量 / s 水冷壁底面积 Among them, Q 进水量 is the water intake, s 水冷壁底面积 is the bottom area of ​​the water-cooled wall, h 水 The height of the water-cooled wall. The reactor chamber of this application increases the height of the cooling water wall and uses a water-leveling ring to comb the teeth, reducing the free energy of the water wall surface and making the overflow water more uniform during its entry into the reactor chamber. This configuration can reduce the adverse effects of the randomness of uneven overflow.

Description

Technical Field

[0001] The present application relates to the field of semiconductor waste gas treatment, and in particular to a reaction chamber for semiconductor waste gas treatment equipment and semiconductor waste gas treatment equipment. Background Art

[0002] The semiconductor industry utilizes a large number of chemicals and specialty gases during production, generating significant amounts of toxic and hazardous process waste gas. This process waste gas must be collected, treated, and discharged simultaneously with the production process. Waste gas treatment systems and equipment are an integral part of the semiconductor production process, and their safety and stability are directly impacted by capacity utilization, product yield, employee health, and the overall environment.

[0003] In semiconductor processing, harsh process refers to a complex, harsh, dusty and highly corrosive process, such as the borophosphosilicate glass (BPSG) process in the chemical vapor deposition (CVD) process, the high aspect ratio (HARP) process, the silicon nitride (SiN) process, the metal etching (MetalETCH) process in the etching (ETCH), the atomic layer deposition (ALD) process in the diffusion (Diffusion) process, the time-sensitive network (TSN) process, etc.

[0004] In the Harsh process, a large amount of SiO2 dust and highly corrosive harmful substances need to be treated, which can easily lead to problems such as poor flow, dust accumulation, blockage, and equipment corrosion and leakage in the waste gas treatment equipment, resulting in the need for equipment shutdown for maintenance.

[0005] In the background technology section, the above information disclosed is only used to enhance the understanding of the background of the application and therefore it may contain information that does not constitute prior art information already known to a person of ordinary skill in the art. Summary of the Invention

[0006] At least one embodiment of the present application provides a reaction chamber for semiconductor waste gas treatment equipment and semiconductor waste gas treatment equipment.

[0007] In a first aspect, at least one embodiment of the present application provides a reaction chamber for semiconductor waste gas treatment equipment, comprising: a reaction chamber body, which is cylindrical and in which waste gas generated by a semiconductor process is generated; water balancing rings, which are arranged in an array along the circumference of the reaction chamber body on the top of the inner wall of the reaction chamber body, and are used to balance overflow water entering the reaction chamber body so that the overflow water evenly covers the entire inner wall of the reaction chamber body;

[0008] The setting height of the water averaging ring is:

[0009] h≥h 水 =Q 进水量 / s 水冷壁底面积 ;

[0010] Among them, Q 进水量 is the overflow water inflow, s 水冷壁底面积 is the bottom area of ​​the water-cooled wall formed by overflow water, h 水 The height of the water-cooled wall formed by overflow water.

[0011] In a second aspect, at least one embodiment of the present application provides a semiconductor waste gas treatment device, comprising a reaction chamber for a semiconductor waste gas treatment device in any embodiment of the first aspect.

[0012] For example, in some embodiments of the first aspect or the second aspect of the present application, overflow water entering the reaction chamber body forms an overflow gap on the inner wall of the reaction chamber body, and the width of the overflow gap is:

[0013] L≤Q 进水量 / πdvt;

[0014] Among them, d is the outer contour diameter of the overflow gap, v is the flow velocity of the overflow water, and t is the flow time of the overflow water.

[0015] For example, in some embodiments of the first aspect or the second aspect of the present application, the water balancing ring includes a plurality of water balancing sub-rings, and the plurality of water balancing sub-rings are equidistant and arranged in an array along the circumference of the reaction chamber body.

[0016] For example, in some embodiments of the first aspect or the second aspect of the present application, the overflow water enters the inner wall of the reaction chamber body at a constant speed and in a constant amount along the circumference of the reaction chamber body.

[0017] For example, in some embodiments of the first aspect or the second aspect of the present application, the semiconductor waste gas treatment equipment further includes: a cooling chamber, which is assembled and connected to the downstream of the reaction chamber, and the waste gas and overflow water generated by the semiconductor process enter the cooling chamber through the reaction chamber; and a circulating water tank, which is connected to the cooling chamber, and the overflow water enters the circulating water tank through the cooling chamber.

[0018] For example, in some embodiments of the first aspect or the second aspect of the present application, the semiconductor waste gas treatment equipment also includes: an overflow chamber, which is assembled and connected between the reaction chamber and the cooling chamber, and the cooling chamber is assembled and connected to the reaction chamber through the overflow chamber, and overflow water enters the cooling chamber through the overflow chamber.

[0019] For example, in some embodiments of the first aspect or the second aspect of the present application, the outer contour of the communicating end between the overflow chamber and the reaction chamber is larger than the outer contour of the communicating end between the overflow chamber and the cooling chamber.

[0020] For example, in some embodiments of the first aspect or the second aspect of the present application, the overflow water enters the circulating water tank and is then re-pumped into the reaction chamber body.

[0021] For example, in some embodiments of the first aspect or the second aspect of the present application, the semiconductor waste gas treatment equipment further includes: a bracket assembly, and the reaction chamber is arranged on the bracket assembly.

[0022] In the reactor chamber of the semiconductor waste gas treatment equipment described in this application, the height of the reactor chamber cooling water wall is increased, and a water-leveling ring is used to create a combed pattern, reducing the free energy of the water wall surface and ensuring a more uniform flow of overflow water into the reactor chamber. This configuration can reduce the adverse effects of uneven overflow caused by the coupling of multiple factors, such as machining accuracy and installation and commissioning.

[0023] It should be understood that the foregoing general description and the following detailed description are merely illustrative and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0025] Figure 1 A schematic structural diagram of a reaction chamber according to an exemplary embodiment of the present application is shown.

[0026] Figure 2 A schematic structural diagram of a semiconductor waste gas treatment device according to an exemplary embodiment of the present application is shown.

[0027] Figure 3 A schematic structural diagram of a semiconductor waste gas treatment device according to some embodiments of the present application is shown.

[0028] Figure 4 A schematic structural diagram of a washing chamber according to some embodiments of the present application is shown. DETAILED DESCRIPTION

[0029] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art. Like reference numerals in the drawings represent like or similar parts, and thus repetitive description thereof will be omitted.

[0030] Described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner.In the following description, many specific details are provided so as to provide a full understanding of the embodiments of the present application. However, it will be appreciated by those skilled in the art that the technical scheme of the present application can be put into practice without one or more of these specific details, or other modes, components, materials, devices or the like can be adopted. In these cases, known structures, methods, devices, realizations, materials or operations will not be shown or described in detail.

[0031] The flowcharts shown in the accompanying drawings are for illustrative purposes only and do not necessarily include all contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may be decomposed, while others may be combined or partially combined. Therefore, the actual execution order may vary depending on the actual situation.

[0032] The terms "first," "second," and the like in the specification and claims of this application and the accompanying drawings are used to distinguish between different objects, not to describe a particular order. Furthermore, the terms "including," "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or elements is not limited to the listed steps or elements but may optionally include steps or elements not listed, or may optionally include other steps or elements inherent to the process, method, product, or apparatus.

[0033] The semiconductor waste gas treatment equipment according to the embodiment of the present application will be described in detail below with reference to the accompanying drawings.

[0034] Figure 1 A schematic structural diagram of a reaction chamber according to an exemplary embodiment of the present application is shown.

[0035] Figure 2 A schematic structural diagram of a semiconductor waste gas treatment device according to an exemplary embodiment of the present application is shown.

[0036] See also Figure 1 and Figure 2 The semiconductor exhaust gas treatment apparatus of the exemplary embodiment includes a support assembly 100 , a reaction chamber 200 , a cooling chamber 300 , and a washing chamber 400 .

[0037] The reaction chamber 200 includes a reaction chamber body 210 and a water balancing ring 220 .

[0038] The reaction chamber body 210 is cylindrical, and exhaust gas generated by the semiconductor process is generated within the reaction chamber body 210. Water balancing rings 220 are arranged in an array and arranged along the circumference of the reaction chamber body 210 at the top of the inner wall of the reaction chamber body 210. The water balancing rings 220 are used to balance the overflow water entering the reaction chamber body 210, ensuring that the overflow water evenly covers the entire inner wall of the reaction chamber body 210.

[0039] The setting height of the water averaging ring 220 is:

[0040] h≥h 水 =Q 进水量 / s 水冷壁底面积 ;

[0041] Among them, Q 进水量 is the overflow water inflow, s 水冷壁底面积 is the bottom area of ​​the water-cooled wall formed by overflow water, h 水 The height of the water-cooled wall formed by overflow water.

[0042] The overflow water entering the reaction chamber body 210 forms an overflow gap on the inner wall of the reaction chamber body 210. The width of the overflow gap is:

[0043] L≤Q 进水量 / πdvt;

[0044] Among them, d is the outer contour diameter of the overflow gap, v is the flow velocity of the overflow water, and t is the flow time of the overflow water.

[0045] In the actual configuration process, the overflow water inflow and water flow time are known and controllable, and the height of the water-cooled wall formed by the overflow water can be obtained by measurement. Therefore, the overflow water flow rate can be obtained by the following formula:

[0046]

[0047] Furthermore, the height of the water balancing ring and the width of the overflow gap can be determined. Through repeated experiments, it was found that in this setting, the overflow water treated by the water balancing ring 220 can evenly cover the entire inner surface of the reaction chamber body 210, effectively reducing dust adhesion and blockage, and extending the maintenance cycle.

[0048] According to some embodiments of the present application, the water balancing ring 220 can be configured to include multiple water balancing sub-rings. In actual operation, each water balancing sub-ring operates independently of each other and performs water balancing on the overflow water entering the interior of the reaction chamber body 210 along the circumferential direction of the inner wall of the reaction chamber body 210. Optionally, multiple water balancing sub-rings are equidistant and arranged in an array along the circumference of the reaction chamber body. This setting state utilizes the water balancing rings for monitoring and facilitates the operator to visually partition the water balancing effect of the water balancing ring 220.

[0049] According to some embodiments of the present application, overflow water enters the inner wall of the reaction chamber body 210 at a constant speed and in equal amounts along the circumference of the reaction chamber body 210. That is, before the water balancing ring 220 balances the overflow water entering the reaction chamber body 210, the overflow water is pre-configured to have a constant speed and constant amount of uniformity. This configuration ensures that the overflow water initially has the same or similar characteristics, allowing the overflow water treated by the water balancing ring 220 to more evenly cover the entire inner surface of the reaction chamber body 210.

[0050] The support assembly 100 includes a first slide rail 110 and a second slide rail 120. The first slide rail 110 and the second slide rail 120 are independent of each other and will not interfere with each other during the sliding process.

[0051] The reaction chamber 200 is disposed on the first slide rail 110. Exhaust gas generated by the semiconductor process is generated within the reaction chamber 200. The cooling chamber 300 is disposed on the support assembly 100. A cooling chamber flange 310 is provided on the side of the cooling chamber 300. The cooling chamber 300 is assembled and connected to the downstream of the reaction chamber 200. Exhaust gas generated by the semiconductor process enters the cooling chamber 300 through the reaction chamber 200 for cooling.

[0052] The cleaning chamber 400 is disposed on the second slide rail 120 . The cleaning chamber 400 is connected to the downstream of the cooling chamber 300 . Exhaust gas generated by the semiconductor process is cooled in the cooling chamber 300 and then enters the cleaning chamber 400 .

[0053] The first slide rail 110 and the second slide rail 120 may be arranged at the same, similar or different heights.

[0054] When the first slide rail 110 and the second slide rail 120 are arranged at the same or similar heights, the first slide rail 110 and the second slide rail 120 can be arranged on the same bracket in the bracket assembly 100. This arrangement can save the layout space inside the bracket assembly 100, making the structure inside the bracket assembly 100 more compact. In addition, the first slide rail 110 and the second slide rail 120 being arranged on the same bracket in the bracket assembly 100 can make the first slide rail 110 and the second slide rail 120 have better pressure resistance. During use, the first slide rail 110 and the second slide rail 120 support each other along the width direction of the bracket assembly 100, and will not be easily deformed by external forces, thereby improving each other's fatigue resistance and making the first slide rail 110 and the second slide rail 120 have a longer service life.

[0055] When the first slide rail 110 and the second slide rail 120 are set at different heights, the setting height of the first slide rail 110 can be configured to be the same as or similar to the height of the center of gravity of the reaction chamber 200, and the setting height of the second slide rail 120 can be configured to be the same as or similar to the height of the center of gravity of the washing chamber 400. In the process of the semiconductor waste gas treatment equipment of the present application treating the waste gas generated by the semiconductor process, the inner walls of the reaction chamber 200 and the washing chamber 400 will be impacted by the water flow and the waste gas flow. For example, overflow water is continuously poured into the reaction chamber 200, and spray washing of the waste gas is maintained in the washing chamber 400. When the first slide rail 110 and the second slide rail 120 are respectively configured to be the same as or similar to the height of the center of gravity of the reaction chamber 200 and the washing chamber 400, the semiconductor waste gas treatment equipment can have better operating stability.

[0056] According to some embodiments of the present application, the first slide rail 110 includes a first left slide rail 111 and a first right slide rail 112, and the first left slide rail 111 and the first right slide rail 112 are symmetrically arranged on both sides of the reaction chamber 200. When the reaction chamber 200 needs to be cleaned, the operator can remove the C-type ferrules on the upper and lower sides of the reaction chamber 200, and then pull the reaction chamber 200 out along the first left slide rail 111 and the first right slide rail 112 to clean and inspect the reaction chamber 200. The first left slide rail 111 and the first right slide rail 112 are of the same height, and the slide rail lengths of the first left slide rail 111 and the first right slide rail 112 are greater than the maximum outer diameter of the reaction chamber 200.

[0057] Similarly, the second slide rail 120 can be configured to include a second left slide rail 121 and a second right slide rail 122, which are symmetrically arranged on both sides of the washing chamber 400. When the washing chamber 400 needs to be cleaned, the operator can remove the C-type ferrules on the upper and lower sides of the washing chamber 400, then pull the washing chamber 400 out along the second left slide rail 121 and the second right slide rail 122 to clean and inspect the washing chamber 400 and replace the ball rings and adsorption components inside the washing chamber 400. The second left slide rail 121 and the second right slide rail 122 are of the same height, and the slide rail length of the second left slide rail 121 and the second right slide rail 122 is greater than the maximum outer diameter of the washing chamber 400.

[0058] Figure 3 A schematic structural diagram of a semiconductor waste gas treatment device according to some embodiments of the present application is shown.

[0059] The semiconductor exhaust gas treatment equipment of some embodiments includes a support assembly 100 , a reaction chamber 200 , a cooling chamber 300 , a washing chamber 400 , an overflow chamber 500 , and a circulating water tank 600 .

[0060] The support assembly 100 includes a first slide rail 110 and a second slide rail 120. The first slide rail 110 and the second slide rail 120 are independent of each other and will not interfere with each other during the sliding process.

[0061] The reaction chamber 200 is disposed on the first slide rail 110. Exhaust gas generated by the semiconductor process is generated within the reaction chamber 200. The cooling chamber 300 is disposed on the support assembly 100. A cooling chamber flange 310 is provided on the side of the cooling chamber 300. The cooling chamber 300 is assembled and connected to the downstream of the reaction chamber 200. Exhaust gas generated by the semiconductor process enters the cooling chamber 300 through the reaction chamber 200 for cooling.

[0062] The cleaning chamber 400 is disposed on the second slide rail 120 . The cleaning chamber 400 is connected to the downstream of the cooling chamber 300 . Exhaust gas generated by the semiconductor process is cooled in the cooling chamber 300 and then enters the cleaning chamber 400 .

[0063] The overflow chamber 500 is assembled and connected to the downstream of the reaction chamber 200, and the cooling chamber 300 is assembled and connected to the reaction chamber 200 through the overflow chamber 500. The outer contour of the connecting end of the overflow chamber 500 and the reaction chamber 200 is larger than the outer contour of the connecting end of the overflow chamber 500 and the cooling chamber 300.

[0064] After flushing the inner walls of reaction chamber 200, overflow water enters cooling chamber 300 through overflow chamber 500 and then enters circulating water tank 600. Overflow chamber 500 has an overall outer contour that is larger at the top and smaller at the bottom. This allows the overflow water to converge after leaving reaction chamber 200, preventing splashing caused by the dispersed flow of the overflow water after entering cooling chamber 300. The converged flow speeds up the circulation of the overflow water. Optionally, the outer contour of overflow chamber 500 is an inverted cone-like shape that is larger at the top and smaller at the bottom.

[0065] There are multiple options for the assembly connection relationship between the overflow chamber 500 and the reaction chamber 200 and the cooling chamber 300. Flexible configuration can be performed according to design parameter requirements such as cost, layout space, and assembly strength. For example, the overflow chamber 500 is connected to the downstream of the reaction chamber 200 through a C-type card assembly, and the cooling chamber 300 is assembled and connected to the overflow chamber 500 through a quick-release flange. In the actual selection process, this application does not make specific restrictions on the selection of materials and types of assembly fasteners, and flexible configuration can be performed.

[0066] Exhaust gas generated during the semiconductor manufacturing process then flows through the reaction chamber 200, overflow chamber 500, and cooling chamber 300 into the wash chamber 400 for cleaning and absorption. A circulating water tank 600 connects to the cooling chamber 300 and wash chamber 400 from below. Overflow water enters the circulating water tank 600 and is then pumped back into the reaction chamber body 210, thus achieving recycling of the overflow water.

[0067] Figure 4 A schematic structural diagram of a washing chamber according to some embodiments of the present application is shown.

[0068] like Figure 4 As shown, the washing chamber 400 may be divided into a lower washing chamber 410 , a middle washing chamber 420 and an upper washing chamber 430 .

[0069] Dust capture nozzles 411 are installed in the lower cleaning chamber 410. Exhaust gas from the semiconductor process enters the cleaning chamber 400 and first enters the lower cleaning chamber 410. Dust capture nozzles 411 spray directly into the exhaust gas's inlet direction. Dust capture nozzles 411 are used to spray water onto water droplets, causing the exhaust gas entering the cleaning chamber 400 to adhere to the water droplets. This head-on collision increases the probability of dust in the exhaust gas adhering to the water droplets and disrupts the directional flow of the exhaust gas, enhancing the subsequent polyurethane's ability to capture dust.

[0070] Among them, the relationship between the velocity of dust particles and the velocity of droplets is:

[0071] m1v1-m2v2=(m1+m2)v;

[0072] Where m1 is the mass of the dust particle, v1 is the velocity of the dust particle, m2 is the mass of the droplet, v2 is the velocity of the droplet, m1+m2 is the mass of the attached dust droplet; v is the velocity of the attached dust liquid.

[0073] The droplets sprayed by the dust capture nozzle 411 collide head-on with the dust, which can increase the probability of dust adhering to the droplets. The mass of the liquid adhering to the dust increases, the speed decreases, and the possibility of being adsorbed by the polyurethane adsorption block increases.

[0074] The middle washing chamber 420 is provided with a polyurethane absorption block 421 and / or a ball ring adsorption layer 422. Corresponding to the polyurethane absorption block 421 and the ball ring adsorption layer 422, the middle washing chamber 420 is also provided with water spray nozzles of various levels.

[0075] After the exhaust gas enters the middle-layer washing chamber 420, the polyurethane absorption block 421 will first filter and absorb the exhaust gas. The polyurethane absorption block 421 has a larger specific surface area than the ball ring absorption layer 422, has a better film-forming effect, and has less impact on the negative pressure. The polyurethane absorption block 421 is placed at the diameter change position between the middle-layer washing chamber 420 and the lower-layer washing chamber 410. The flue gas passes through the diameter change, and the gas flow rate and pressure decrease, and the flow direction tends to diffuse. The larger specific surface area of ​​the polyurethane absorption block 421 helps to absorb dust. The first-level water spray nozzle 423 is used to clean the dust on the polyurethane absorption block 421 to maintain its dust capture efficiency.

[0076] Ball ring adsorption layer 422 provides a secondary adsorption process, capturing missed dust particles. Furthermore, ball ring adsorption layer 422 absorbs moisture from the exhaust gas, reducing the gas humidity during the secondary adsorption process and allowing the exhaust gas to be discharged directly into the atmosphere. Secondary water spray nozzles 424 clean dust particles from ball ring adsorption layer 422, maintaining its dust and moisture capture efficiency.

[0077] After being adsorbed and treated in the middle scrubber 420, the waste gas is discharged through the upper scrubber 430. The outer contour of the upper scrubber 430 is smaller than that of the middle scrubber 420, which speeds up the exhaust of the gas. The small exhaust radius also facilitates monitoring and control of the exhausted gas.

[0078] While the exemplary embodiments of the present application have been specifically illustrated and described above, it should be understood that the present application is not limited to the detailed structures, configurations, or implementations described herein; rather, the present application is intended to encompass various modifications and equivalent configurations within the spirit and scope of the appended claims.

Claims

1. A reaction chamber for semiconductor waste gas treatment, characterized in that: include: The reaction chamber body is cylindrical, and the exhaust gas generated by the semiconductor process is generated in the reaction chamber body; Water balancing rings are arranged in an array along the circumference of the reaction chamber body at the top of the inner wall of the reaction chamber body, and are used to balance the overflow water entering the reaction chamber body so that the overflow water evenly covers the entire inner wall of the reaction chamber body; The setting height of the water averaging ring is: h≥h 水 ; h 水 =Q 进水量 / s 水冷壁底面积 ; Among them, Q 进水量 is the overflow water inflow, s 水冷壁底面积 is the bottom area of ​​the water-cooled wall formed by overflow water, h 水 The height of the water-cooled wall formed by overflow water.

2. The reaction chamber for semiconductor waste gas treatment according to claim 1, characterized in that: The overflow water entering the reaction chamber body forms an overflow gap on the inner wall of the reaction chamber body. The width of the overflow gap is: L≤Q 进水量 / πdvt; Among them, d is the outer contour diameter of the overflow gap, v is the flow velocity of the overflow water, and t is the flow time of the overflow water.

3. The reaction chamber for semiconductor waste gas treatment according to claim 1, characterized in that: The water balancing ring includes a plurality of water balancing sub-rings, which are equidistant and arranged in an array along the circumference of the reaction chamber body.

4. The reaction chamber for semiconductor waste gas treatment according to any one of claims 1 to 3, characterized in that: The overflow water enters the inner wall of the reaction chamber body at a constant speed and in a constant amount along the circumference of the reaction chamber body.

5. A semiconductor waste gas treatment device, characterized in that: include: A reaction chamber for semiconductor waste gas treatment according to any one of claims 1 to 4.

6. The semiconductor waste gas treatment equipment according to claim 5, characterized in that: Also includes: a cooling chamber, which is connected to the downstream of the reaction chamber, and the waste gas and overflow water generated by the semiconductor process enter the cooling chamber through the reaction chamber; A circulating water tank is communicated with the cooling chamber, and overflow water enters the circulating water tank through the cooling chamber.

7. The semiconductor waste gas treatment equipment according to claim 6, characterized in that: Also includes: The overflow chamber is assembled and connected between the reaction chamber and the cooling chamber. The cooling chamber is assembled and connected to the reaction chamber through the overflow chamber, and overflow water enters the cooling chamber through the overflow chamber.

8. The semiconductor waste gas treatment equipment according to claim 7, characterized in that: The outer contour of the communicating end between the overflow chamber and the reaction chamber is larger than the outer contour of the communicating end between the overflow chamber and the cooling chamber.

9. The semiconductor waste gas treatment equipment according to claim 6, characterized in that: The overflow water enters the circulating water tank and is then pumped back into the reaction chamber body.

10. The semiconductor waste gas treatment equipment according to any one of claims 5 to 9, characterized in that: Also includes: A support assembly, wherein the reaction chamber is arranged on the support assembly.

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