Amorphous mo-si@mo-o thin film catalyst, preparation method thereof and application thereof in electrolysis of water
Amorphous Mo-Si@Mo-O thin film catalysts were prepared by magnetron sputtering, which solved the problem of difficult component content control by traditional methods and achieved high-efficiency, low-cost water electrolysis catalytic performance that is adaptable to various environments.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- QINGDAO UNIV OF TECH
- Filing Date
- 2023-05-16
- Publication Date
- 2026-06-19
AI Technical Summary
Existing technologies make it difficult to prepare efficient and low-cost Mo-Si@Mo-O thin film catalysts, and traditional methods make it difficult to control their composition to optimize electrocatalytic hydrogen evolution performance.
Amorphous Mo-Si@Mo-O thin film catalysts were prepared using magnetron sputtering technology. By controlling sputtering parameters such as oxygen flow rate and power, a Mo-Si and Mo-O heterojunction structure was formed, thereby improving catalytic activity and stability.
It achieves low overpotential, strong conductivity, high specific surface area and abundant defect sites, reducing manufacturing costs and improving the catalytic efficiency of water electrolysis, and is adaptable to high temperature and acid/alkali environments.
Smart Images
Figure CN116536702B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of catalyst technology, and more specifically to amorphous Mo-Si@Mo-O thin film catalysts, their preparation methods, and their applications in water electrolysis. Background Technology
[0002] With the rapid development of human civilization, modern society's demand for energy has increased dramatically. Since the beginning of the 21st century, human society's consumption of traditional fossil fuels (coal, oil, natural gas, etc.) has increased exponentially. The resulting emissions of carbon dioxide and its associated harmful gases (sulfur dioxide, nitrogen monoxide, carbon monoxide, etc.) have had an immeasurable impact on global warming and atmospheric pollution. With a growing awareness of environmental pollution and an urgent need for energy, the search for green energy has become a crucial theme in today's energy development. Wind energy, tidal energy, solar energy, bioenergy, and hydrogen energy are considered traditional green renewable energy sources; however, wind, solar, and tidal energy are easily constrained by environmental factors, affecting their ease of use. Hydrogen, on the other hand, has the highest specific energy density (142.35 kJ / kg⁻¹). -1 Furthermore, the combustion product is only water, producing no pollutants; it can exist in gaseous, liquid, or solid metal hydrides; and it can adapt to various application environments and requirements for storage and transportation, making it considered the most ideal green energy carrier in the future energy landscape. In addition, the raw material required for hydrogen production through water electrolysis is water, which is extremely abundant on Earth. This process has advantages such as simple technology, no pollution, high purity of the produced hydrogen, and wide applicability, making it considered the most ideal way to build a future energy landscape dominated by hydrogen energy. However, due to the limitations of reaction kinetics, the decomposition voltage required in the actual electrocatalytic hydrogen evolution process is much higher than the theoretical decomposition voltage, leading to serious energy loss. Therefore, developing and researching novel electrode materials to reduce the overpotential of water electrolysis to reduce electrolysis energy consumption is particularly important. Noble metals such as Pt, Ru, and Ir can effectively reduce the reaction overpotential in the water electrolysis reaction and are considered the best hydrogen evolution catalysts, but the low reserves and high cost of noble metals greatly reduce their practical application. Therefore, developing alternative catalysts with excellent catalytic activity and stability but low cost is very important.
[0003] Molybdenum dioxide (MoO2) possesses excellent electrical conductivity, chemical stability, and numerous edge active sites (Mo edges and O edges), making it a potential catalyst for electrolytic reaction (HER). Unfortunately, severe agglomeration leads to fewer exposed active sites, limiting HER performance. Various MoO2 nanostructures with larger surface areas and more explosive active sites, such as nanoparticles, nanoribbons, nanosheets, and nanowires, have been reported using different synthetic strategies, exhibiting higher HER activity compared to bulk molybdenum. Besides increasing the number of exposed active sites, improving the catalytic activity of each site is also crucial. In recent years, various heterogeneous catalysts have emerged, demonstrating high catalytic water splitting performance. Among them, heterojunction catalysts occupy a very important position among emerging catalysts. A heterostructure can be defined as a composite structure composed of interfaces formed by different materials. Heterojunction catalysts consist of two or more components connected by physical or chemical interactions. In heterojunction catalysts, electrons can rearrange at the heterojunction interface to modify active sites. The synergistic effect of different active sites can promote reaction kinetics, often exhibiting better water electrolysis activity than single-component catalysts. The advantages of heterojunction catalysts can be summarized in three points: First, the lattice strain at the heterojunction interface can expose more active sites; second, the morphology design of heterostructure catalysts is diverse, and the specific surface area and catalytic active sites of the catalyst can be improved by designing porous or hierarchical structures; third, the charge transfer or complementary redox characteristics between the components in the heterojunction catalyst.
[0004] Traditional methods often employ hydrothermal, solvothermal, and chemical deposition methods to prepare heterojunction catalysts, but it is difficult to prepare Mo-Si@Mo-O thin film catalysts using these methods. Summary of the Invention
[0005] To address the above problems, this invention provides an amorphous Mo-Si@Mo-O thin film catalyst, its preparation method, and its application in water electrolysis. A highly efficient amorphous Mo-Si@Mo-O thin film catalyst was prepared using magnetron sputtering technology.
[0006] The first objective of this invention is to provide a method for preparing an amorphous Mo-Si@Mo-O thin film catalyst, which is carried out according to the following steps:
[0007] Step 1: Clean and dry the substrate to obtain the processed substrate;
[0008] Step 2: Preparation of amorphous Mo-Si@Mo-O thin film catalyst:
[0009] The processed substrate from step (1) is installed in the vacuum chamber of a magnetron sputtering equipment for glow discharge sputtering cleaning. Argon and oxygen are then introduced into the vacuum chamber, and amorphous Mo-Si@Mo-O thin films are deposited by dual-target co-sputtering using Mo and Si targets.
[0010] Preferably, in step 1, the substrate includes nickel foam, graphene, single-layer polished silicon wafer, carbon fiber paper, carbon fiber cloth, copper foam, or wax ash.
[0011] Preferably, in step 1, the surface cleaning method of the substrate is as follows: the substrate is ultrasonically cleaned with an organic solvent or alkaline solution, and then ultrasonically cleaned with deionized water.
[0012] Preferably, in step 2, the method for glow discharge sputtering cleaning in the vacuum chamber is as follows: evacuate the air until the pressure is below 5 × 10⁻⁶. -4 After Pa, argon gas is introduced and the argon gas pressure is controlled at 0.4~1.6Pa. A bias voltage of -200~500V is applied to the substrate and the glow discharge cleaning time is 10-20min.
[0013] Preferably, in step 2, the dual-target co-sputtering method is as follows: the Mo target uses a DC power supply, the Si target uses an RF power supply, the Mo target power is 50-300W, the Si target power is 40-80W, the deposition time is 20-80min, the argon flow rate is 20-40sccm, the oxygen flow rate is 2-5sccm, and the background vacuum is 3.5×10⁻⁶. -4 ~6×10 -4 Pa, working air pressure is 0.2-1.0 Pa.
[0014] A second objective of this invention is to provide an amorphous Mo-Si@Mo-O thin film catalyst prepared by the above-described preparation method.
[0015] A third objective of this invention is to provide the application of the above-mentioned amorphous Mo-Si@Mo-O thin film catalyst in water electrolysis.
[0016] Preferably, a three-electrode system is formed by using a saturated calomel electrode as a reference electrode, a graphite rod as an auxiliary electrode, and an amorphous Mo-Si@Mo-O thin film catalyst as a working electrode. This system is connected to an electrochemical detection device, and electrolysis is performed using an H2-saturated alkaline solution as the electrolyte.
[0017] Compared with the prior art, the present invention has the following beneficial effects:
[0018] (1) This invention utilizes magnetron sputtering technology to prepare a highly efficient amorphous Mo-Si@Mo-O thin film catalyst. During sputtering, high-energy argon ions bombard the Mo and Si targets, and a small amount of oxygen is introduced to ionize the oxygen into oxygen ions. Due to thermodynamic factors, oxygen ions are more likely to combine with Mo atoms, thus forming a heterojunction structure in which Mo-Si and Mo-O coexist. By changing the oxygen flow rate through magnetron sputtering, the content of Mo-Si and Mo-O can be perfectly controlled, which is difficult to achieve by conventional preparation methods. By controlling the composition content, the Mo-Si and Mo-O heterojunction structure most favorable for electrocatalytic hydrogen evolution is obtained. This catalyst has low overpotential, strong conductivity, high temperature stability, high specific surface area, and abundant defect sites. Moreover, the preparation process is simple, and the manufacturing usually requires mild conditions and low-cost precursors, which will greatly reduce the manufacturing cost.
[0019] (2) This invention uses magnetron sputtering technology to prepare amorphous Mo-Si@Mo-O thin film catalysts. Compared with crystalline catalysts, amorphous Mo-Si@Mo-O films typically have a higher surface area because their amorphous structure allows the films to exhibit abundant porous structures and highly dispersed catalytic active sites. This high surface area helps to increase the contact area between the catalyst and the reactants, increasing the reaction sites for the catalytic reaction and thus improving catalytic performance. Secondly, amorphous Mo-Si@Mo-O films have abundant active sites because their amorphous structure leads to a high defect density and irregular atomic arrangement. These defects and irregular structures can provide more catalytic active sites, increasing the catalytic activity of the water electrolysis reaction. Furthermore, amorphous Mo-Si@Mo-O films have good chemical and thermal stability, and can maintain their catalytic performance at high temperatures (80°C) and acid-base environments. This stability helps to extend the catalyst's lifespan and provide long-term stable catalytic performance. Moreover, because amorphous Mo-Si@Mo-O films have low activation energy, they can initiate catalytic reactions at lower temperatures (ice water, 0°C). This helps improve the catalytic efficiency of water electrolysis and reduce energy consumption. Attached Figure Description
[0020] Figure 1 The X-ray photoelectron spectrum of the amorphous Mo-Si@Mo-O thin film catalyst prepared in Example 1 of this invention is shown below.
[0021] Figure 2 This is a scanning electron microscope image of the amorphous Mo-Si@Mo-O thin film catalyst prepared in Example 1 of the present invention. Figure 2 a) and specific surface area BET graph ( Figure 2 b)
[0022] Figure 3This is a transmission electron microscope image of the amorphous Mo-Si@Mo-O thin film catalyst prepared in Example 1 of the present invention;
[0023] Figure 4 The above is the EDS energy spectrum of the amorphous Mo-Si@Mo-O thin film catalyst prepared in Example 1 of this invention.
[0024] Figure 5 The graph shows the hydrogen evolution performance of the amorphous Mo-Si@Mo-O thin film catalyst prepared in Example 1 of this invention in water electrolysis.
[0025] Figure 6 The graph shows the hydrogen evolution catalytic performance of the amorphous Mo-Si@Mo-O thin film catalyst prepared in Example 1 of this invention under different environments during water electrolysis. Detailed Implementation
[0026] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0027] Unless otherwise specified, the experimental methods described in the various embodiments of this invention are all conventional methods.
[0028] Example 1
[0029] A method for preparing an amorphous Mo-Si@Mo-O thin film catalyst by sputtering on a commercial nickel foam surface using magnetron sputtering technology includes the following steps:
[0030] Step 1: The commercial foamed nickel substrate is ultrasonically cleaned with acetone, anhydrous ethanol and deionized water for 10 minutes each, and then dried to obtain the treated substrate.
[0031] Step 2: Preparation of amorphous Mo-Si@Mo-O thin film catalyst:
[0032] S1. The processing substrate from step 1 is mounted on the workpiece carrier in the vacuum chamber of the magnetron sputtering equipment, and the Mo target and Si target are respectively mounted on the target positions in the vacuum chamber of the magnetron sputtering equipment.
[0033] S2. The substrate processed in step 1 is first subjected to glow discharge sputtering cleaning. The glow discharge sputtering cleaning method is as follows: the magnetron sputtering vacuum chamber is evacuated to a pressure lower than 5 × 10⁻⁶. -4After Pa, argon gas is introduced and the pressure is controlled at 1.0 Pa. A bias voltage of -200V is applied to the substrate, and glow discharge cleaning is performed for 15 min. Then, argon and oxygen are introduced into the vacuum chamber at a flow rate of 30 sccm and an oxygen flow rate of 2.1 sccm, with a base vacuum of 5 × 10⁻⁶. -4 The working gas pressure was controlled at 0.55 Pa. The Mo target was powered by a DC power supply and the power of the Mo target was controlled at 100 W. The Si target was also powered by an RF power supply and the power of the Si target was selected as 40 W. The deposition time was 40 min, and an amorphous Mo-Si@Mo-O thin film catalyst was obtained, denoted as Mo-Si(40W)@NF.
[0034] Example 2
[0035] The preparation steps are the same as in Example 1, except that the nickel foam substrate in step (1) is replaced with a single-layer polished silicon wafer.
[0036] Example 3
[0037] The preparation steps are the same as in Example 1, except that the nickel foam substrate in step (1) is replaced with a single-layer graphene substrate.
[0038] Example 4
[0039] The preparation steps and conditions are the same as in Example 1, except that the power of the Si target in step (2) is selected as 60W, denoted as Mo-Si(60W)@NF.
[0040] Example 5
[0041] The preparation steps and conditions are the same as in Example 1, except that the power of the Si target in step (2) is selected as 80W, denoted as Mo-Si(80W)@NF.
[0042] Example 6
[0043] Step 1: The carbon fiber paper substrate is ultrasonically cleaned with sodium hydroxide solution and deionized water for 10 minutes each, and then dried to obtain the treated substrate.
[0044] Step 2: Preparation of amorphous Mo-Si@Mo-O thin film catalyst:
[0045] S1. The processing substrate from step 1 is mounted on the workpiece carrier in the vacuum chamber of the magnetron sputtering equipment, and the Mo target and Si target are respectively mounted on the target positions in the vacuum chamber of the magnetron sputtering equipment.
[0046] S2. The substrate processed in step 1 is first subjected to glow discharge sputtering cleaning. The glow discharge sputtering cleaning method is as follows: the magnetron sputtering vacuum chamber is evacuated to a pressure lower than 5 × 10⁻⁶. -4After Pa, argon gas is introduced and the pressure is controlled at 0.4 Pa. A bias voltage of 500 V is applied to the substrate, and glow discharge cleaning is performed for 10 min. Then, argon gas is introduced into the vacuum chamber at a flow rate of 20 sccm and an oxygen flow rate of 2 sccm, with a base vacuum of 5 × 10⁻⁶. -4 The working gas pressure was controlled at 0.2 Pa. The Mo target was powered by a DC power supply with a power of 50 W. The Si target was powered by an RF power supply with a power of 40 W. The deposition time was 20 min, resulting in an amorphous Mo-Si@Mo-O thin film catalyst.
[0047] Example 7
[0048] Step 1: The carbon fiber paper substrate is ultrasonically cleaned with sodium hydroxide solution and deionized water for 10 minutes each, and then dried to obtain the treated substrate.
[0049] Step 2: Preparation of amorphous Mo-Si@Mo-O thin film catalyst:
[0050] S1. The processing substrate from step 1 is mounted on the workpiece carrier in the vacuum chamber of the magnetron sputtering equipment, and the Mo target and Si target are respectively mounted on the target positions in the vacuum chamber of the magnetron sputtering equipment.
[0051] S2. The substrate processed in step 1 is first subjected to glow discharge sputtering cleaning. The glow discharge sputtering cleaning method is as follows: the magnetron sputtering vacuum chamber is evacuated to a pressure lower than 5 × 10⁻⁶. -4 After Pa, argon gas is introduced and the pressure is controlled at 1.6 Pa. A bias voltage of 200 V is applied to the substrate, and glow discharge cleaning is performed for 20 min. Then, argon gas is introduced into the vacuum chamber at a flow rate of 40 sccm and an oxygen flow rate of 5 sccm, with a base vacuum of 6 × 10⁻⁶. -4 The working gas pressure was controlled at 1.0 Pa. The Mo target was powered by a DC power supply with a power of 300 W. The Si target was powered by an RF power supply with a power of 60 W. The deposition time was 80 min, resulting in an amorphous Mo-Si@Mo-O thin film catalyst.
[0052] Example 8
[0053] Step 1: The carbon fiber paper substrate is ultrasonically cleaned with sodium hydroxide solution and deionized water for 10 minutes each, and then dried to obtain the treated substrate.
[0054] Step 2: Preparation of amorphous Mo-Si@Mo-O thin film catalyst:
[0055] S1. The processing substrate from step 1 is mounted on the workpiece carrier in the vacuum chamber of the magnetron sputtering equipment, and the Mo target and Si target are respectively mounted on the target positions in the vacuum chamber of the magnetron sputtering equipment.
[0056] S2. The substrate processed in step 1 is first subjected to glow discharge sputtering cleaning. The glow discharge sputtering cleaning method is as follows: the magnetron sputtering vacuum chamber is evacuated to a pressure lower than 5 × 10⁻⁶. -4 After Pa, argon gas is introduced and the pressure is controlled at 1.0 Pa. A bias voltage of -200V is applied to the substrate, and glow discharge cleaning is performed for 15 min. Then, argon gas is introduced into the vacuum chamber at a flow rate of 30 sccm and an oxygen flow rate of 4 sccm, with a base vacuum of 3.5 × 10⁻⁶. -4 The working gas pressure was controlled at 0.3 Pa. The Mo target was powered by a DC power supply with a power of 200 W. The Si target was powered by an RF power supply with a power of 80 W. The deposition time was 60 min, resulting in an amorphous Mo-Si@Mo-O thin film catalyst.
[0057] Comparative Example 1
[0058] A method for preparing a Pt thin film catalyst by sputtering on a commercial nickel foam surface using magnetron sputtering technology includes the following steps:
[0059] Step 1: Clean the commercial foamed nickel substrate sequentially with acetone, anhydrous ethanol, and deionized water using ultrasonic cleaning for 10 minutes each; mount the substrate on the workpiece gantry in the vacuum chamber of the magnetron sputtering equipment, and install the elemental Pt target on the target position in the vacuum chamber of the magnetron sputtering equipment.
[0060] Step 2: After evacuating the magnetron sputtering vacuum chamber to a pressure below 5×10-4 Pa, argon gas is introduced and the pressure is controlled at 1.0 Pa. A bias voltage of -200V is applied to the substrate, and glow discharge cleaning is performed for 15 min.
[0061] Step 3: Argon gas is introduced into the vacuum chamber at a flow rate of 30 sccm. The working pressure is controlled at 0.50 Pa. A DC power supply is used for Pt, the target power is controlled at 100 W, the deposition time is 20 min, and the temperature is room temperature. The Pt thin film catalyst is obtained and denoted as Pt.
[0062] Comparative Example 2
[0063] A blank control of nickel foam (NF) was prepared, with all other conditions remaining unchanged, and denoted as NF.
[0064] Examples 1-3 of this invention all yielded amorphous Mo-Si@Mo-O thin-film catalysts with excellent catalytic performance. The following study uses the amorphous Mo-Si@Mo-O thin-film catalyst prepared in Example 1 as an example, with the catalyst itself used as the working electrode. The specific research methods and results are as follows:
[0065] Figure 1 The results show that Mo-Si@Mo-O(40W)@NF 3d 3 / 2 and 3D5 / 2 The binding energies corresponding to the peaks are 227.7 eV and 231.1 eV.
[0066] Figure 2 This is a scanning electron microscope image of the amorphous Mo-Si@Mo-O thin film catalyst prepared in Example 1 of this invention. Figure 2 a) and specific surface area BET spectrum, from the scan map ( Figure 2 a) It can be seen that the morphology of Mo-Si(40W)@NF is plate-like, and the BET spectrum shows that it has a large specific surface area.
[0067] Figure 3 The results show that the Mo-Si@Mo-O thin film prepared by magnetron sputtering has an amorphous structure.
[0068] Figure 4 The results show that the Mo-Si@Mo-O thin film prepared by magnetron sputtering has Mo, Si and O elements uniformly distributed on nickel foam.
[0069] Figure 5 The overpotential comparison diagram at 10mA obtained by performing HER performance testing on the prepared samples using a three-electrode electrochemical workstation. The method of water electrolysis catalytic reaction using the three-electrode workstation is as follows: a saturated calomel electrode is used as the reference electrode, a graphite rod is used as the auxiliary electrode, and together with the working electrode, a three-electrode system is formed and connected to an electrochemical detection device. Electrolysis is performed using an alkaline solution saturated with H2 as the electrolyte. The working electrodes are selected from the amorphous Mo-Si@Mo-O thin film of Example 1, the amorphous Mo-Si@Mo-O thin film of Example 4, the amorphous Mo-Si@Mo-O thin film of Example 5, the Pt thin film catalyst plated with metallic platinum (Pt) of Comparative Example 1, and the nickel foam (NF) of Comparative Example 2.
[0070] The results show that the amorphous Mo-Si@Mo-O thin film catalyst prepared by magnetron sputtering can effectively reduce the overpotential of HER, and the overpotential becomes closer to that of Pt as the Si target power decreases.
[0071] Figure 6 The graph shows the hydrogen evolution catalytic performance of the amorphous Mo-Si@Mo-O thin film catalyst prepared in Example 1 of this invention under different environments during water electrolysis. Figure 6 Medium and high temperature refers to 80℃, and low temperature refers to 0℃. Tests were conducted in different electrolytes (0.5M H2SO4 and 1.0M KOH), and it can be seen that it can maintain good catalytic performance under both high temperature and acid-base environments.
[0072] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the invention.
[0073] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.
Claims
1. A method for preparing an amorphous Mo-Si@Mo-O thin film catalyst, characterized in that, Follow these steps: Step 1: Clean and dry the substrate to obtain the processed substrate; Step 2: Preparation of amorphous Mo-Si@Mo-O thin film catalyst: The processed substrate from step (1) is installed in the vacuum chamber of a magnetron sputtering equipment for glow discharge sputtering cleaning. Argon and oxygen are then introduced into the vacuum chamber, and amorphous Mo-Si@Mo-O thin films are deposited by dual-target co-sputtering using Mo and Si targets.
2. The method for preparing the amorphous Mo-Si@Mo-O thin film catalyst according to claim 1, characterized in that, In step 1, the substrate includes nickel foam, graphene, single-layer polished silicon wafer, carbon fiber paper, carbon fiber cloth, copper foam, or wax ash.
3. The method for preparing the amorphous Mo-Si@Mo-O thin film catalyst according to claim 1, characterized in that, In step 1, the surface cleaning method of the substrate is as follows: the substrate is ultrasonically cleaned with an organic solvent or alkaline solution, and then ultrasonically cleaned with deionized water.
4. The method for preparing the amorphous Mo-Si@Mo-O thin film catalyst according to claim 1, characterized in that, In step 2, the method for glow discharge sputtering cleaning in the vacuum chamber is as follows: evacuate the gas until the pressure is below 5 × 10⁻⁶. -4 After Pa, argon gas is introduced and the argon gas pressure is controlled at 0.4 to 1.6 Pa. A bias voltage of -200 to 500 V is applied to the substrate and the glow discharge cleaning time is 10 to 20 min.
5. The method for preparing the amorphous Mo-Si@Mo-O thin film catalyst according to claim 1, characterized in that, In step 2, the dual-target co-sputtering method is as follows: the Mo target uses a DC power supply, and the Si target uses an RF power supply. The Mo target power is 50-300W, and the Si target power is 40-80W. The deposition time is 20-80 min, the argon flow rate is 20-40 sccm, the oxygen flow rate is 2-5 sccm, and the background vacuum is 3.5 × 10⁻⁶. -4 ~6×10 -4 Pa, working air pressure is 0.2~1.0Pa.
6. An amorphous Mo-Si@Mo-O thin film catalyst prepared by the preparation method according to any one of claims 1-5.
7. The application of the amorphous Mo-Si@Mo-O thin film catalyst according to claim 6 in water electrolysis.
8. The application of the amorphous Mo-Si@Mo-O thin-film catalyst according to claim 7 in water electrolysis, characterized in that, A three-electrode system was formed, consisting of a saturated calomel electrode as the reference electrode, a graphite rod as the auxiliary electrode, and an amorphous Mo-Si@Mo-O thin film catalyst as the working electrode. This system was connected to an electrochemical detection device, and electrolysis was performed using an H2-saturated alkaline solution as the electrolyte.