Arrayed spectral MEMS chip arrangement method based on sample absorption peaks

Abstract

The application discloses an array spectrum MEMS chip arrangement method based on sample absorption peaks, and comprises the following steps: calculating the number of wavelength points contained in each typical section in a typical type arrangement mode of a spectrum MEMS Fabry-Perot cavity chip; calculating the characteristic wavelength points contained in each typical section according to the wavelength response range of the spectrum MEMS Fabry-Perot cavity chip; arranging the array spectrum MEMS Fabry-Perot cavity chip subunit in an array mode in combination with the number of characteristic wavelength points; and sequentially arranging the sub-chip array in a spaced arrangement mode in combination with the wavelength values of the characteristic wavelength points. The application converts a single-point type MEMS spectrum chip into an array type MEMS spectrum chip, effectively improves the acquisition efficiency and stability of the spectrum MEMS Fabry-Perot cavity chip. Meanwhile, the wavelength point equal division type arrangement of the traditional single-point type spectrum MEMS Fabry-Perot cavity chip is converted into a typical type arrangement based on sample absorption peaks, the amount of characteristic information of the to-be-measured sample components is increased, and the spectrum analysis accuracy is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of spectral MEMS chip technology, in particular to an array type spectral MEMS chip arrangement method based on sample absorption peaks. BACKGROUND

[0002] With the development of micro-electro-mechanical technology, the miniaturization of near-infrared spectrometer is the focus of development in recent years, and the most common miniaturized near-infrared spectrometer is based on Fabry-Perot (Fabry-Perot) interference tunable filter chip. The optical principle of MEMS Fabry-Perot cavity chip is based on the Fabry-Perot interference principle. The light splitting chip is made by semiconductor integrated circuit process. The chip is driven by different voltages to change the cavity length of the MEMS Fabry-Perot cavity chip in real time, and different narrow wave spectra are obtained. This kind of single point type spectral MEMS Fabry-Perot cavity chip completes the wavelength scanning of the full scale (FSR) spectral range by time division method. This method needs to change the voltage value and then change the cavity length to collect the spectral data of each wavelength point one by one. If the single point type spectral MEMS Fabry-Perot cavity chip needs 1 second to collect the spectral data of a single wavelength point, and the actual contains M wavelength points, then the time required to collect a single spectral data of the sample to be measured each time can be calculated as 1*M seconds. The more wavelength points the miniaturized spectrometer contains, the longer the time it takes to collect a single spectral data. This acquisition method seriously affects the spectral acquisition efficiency. At the same time, the wavelength points of the single point type spectral MEMS Fabry-Perot cavity chip are often arranged in a uniform manner, that is, the wavelength range between every two adjacent wavelength points is equal. This arrangement method collects too much data with small correlation degree with the characteristic information of the sample to be measured. This arrangement method will seriously affect the accuracy of spectral analysis. The low analysis accuracy and efficiency will seriously restrict the development of miniaturized near-infrared spectral technology. Therefore, how to improve the acquisition efficiency and analysis accuracy of the spectral MEMS Fabry-Perot cavity chip has become a problem that must be solved. SUMMARY

[0003] The purpose of the present application is to overcome the shortcomings in the prior art, and to provide an array type spectral MEMS chip arrangement method based on sample absorption peaks, which converts single point type MEMS spectral chip into array type MEMS spectral chip, and effectively improves the acquisition efficiency and stability of spectral MEMS Fabry-Perot cavity chip through static multi-channel acquisition.

[0004] The present application solves the above problems by the following technical solutions:

[0005] The array type spectral MEMS chip arrangement method based on sample absorption peaks comprises:

[0006] Step a. Calculate the number of wavelength points contained in each typical section in the typical arrangement method of the spectral MEMS Fabry-Perot cavity chip wavelength points;

[0007] Step b. Calculate the characteristic wavelength points contained in each typical section according to the wavelength response range of the spectral MEMS Fabry-Perot cavity chip;

[0008] Step c. Array the arrayed spectral MEMS Fabry-Perot cavity chip subunits in an arrayed manner in combination with the number of characteristic wavelength points;

[0009] Step d. Sequentially arrange the sub-chip array in a spaced arrangement manner in combination with the wavelength values of the characteristic wavelength points.

[0010] As a further improvement of the present application, in step a, the typical arrangement based on the sample absorption peak is included, and the specific method is:

[0011] The wavelength points of the spectral MEMS Fabry-Perot cavity chip are divided into two typical sections, i.e., a characteristic typical section and a non-characteristic typical section, wherein the characteristic typical section is divided into characteristic points with the actual sample component content spectral absorption peak as the center, the non-characteristic typical section is divided into wavelength points away from the spectral absorption peak, and the number of wavelength points contained in the characteristic typical section is greater than the number of wavelength points in the non-characteristic typical section.

[0012] As a further improvement of the present application, in step a, the number of wavelength points contained in the characteristic typical section is rounded up, and the non-characteristic typical section is rounded down.

[0013] As a further improvement of the present application, in step b, the calculation of the characteristic wavelength points contained in each typical section is based on the equal division type wavelength point division method, and the specific steps include:

[0014] b1. The wavelength response range of the spectral MEMS Fabry-Perot cavity chip is (λ1-λ2) nm, and the spectral characteristic wavelength points contained are M, and the wavelength range between the two adjacent characteristic wavelength points is calculated

[0015] b2. If the wavelength point density of the characteristic typical section is b times the equal division type wavelength point density, then the wavelength range between the two adjacent characteristic wavelength points of the characteristic typical section is H2=H1 / b, and the wavelength range H3=(A1-1)*H2 of the characteristic typical section can be calculated, A1 is the number of wavelength points contained in the characteristic typical section;

[0016] b3. The wavelength range H4=λ2-λ1-H3 of the non-characteristic typical section is calculated;

[0017] b4. The wavelength range H5=H4 / (A2-1) between the two adjacent characteristic wavelength points of the non-characteristic typical section is calculated, A2 is the number of wavelength points contained in the non-characteristic typical section;

[0018] b5. Set the wavelength value of the actual sample component content spectrum absorption peak as λ3, and take the wavelength point of the spectrum absorption peak of the sample to be measured as the center point to select the characteristic wavelength point, to obtain the characteristic wavelength points contained in the characteristic typical section.

[0019] As a further improvement of the present application, the characteristic wavelength points contained in the characteristic typical section are obtained by taking the wavelength point of the spectrum absorption peak of the sample to be measured as the center point to select the characteristic wavelength point;

[0020] When A1 is an odd number, the characteristic wavelength points contained in the characteristic typical section are respectively When A1 is an even number, the characteristic wavelength points contained in the characteristic typical section are respectively

[0021] As a further improvement of the present application, in step b, the characteristic wavelength points contained in the characteristic typical section further include:

[0022] If If the minimum wavelength value in the characteristic typical section is less than the minimum value of the wavelength response range of the spectrum MEMS Fabry-Perot cavity chip, then is set as λ1, and the characteristic wavelength points contained in the characteristic typical section are respectively [λ1, λ1+H2, λ1+2H2, … λ1+(A1-1)A2], and the characteristic wavelength points contained in the non-characteristic typical section are respectively calculated as [λ2-(A2-1)A5, … λ2-2A5, λ2-H5, λ2];

[0023] If If the maximum wavelength value in the characteristic typical section is greater than the maximum value of the wavelength response range of the spectrum MEMS Fabry-Perot cavity chip, then is set as λ2, and the characteristic wavelength points contained in the characteristic typical section are respectively [λ2-(A1-1)A2, … λ2-2H2, λ2-H2, λ2], and the characteristic wavelength points contained in the non-characteristic typical section are respectively calculated as [λ1, λ1+H5, λ1+2H5, … λ1+(A2-1)H5];

[0024] If It can be known that the wavelength range of the characteristic typical section is contained in the wavelength response range (λ1~λ2) of the spectrum MEMS Fabry-Perot cavity chip, then the characteristic wavelength points of the characteristic typical section do not need to be processed, the characteristic wavelength range of the characteristic typical section is removed, and the characteristic wavelength points of the non-characteristic typical section are calculated, and the wavelength values of the first and last wavelength points of the non-characteristic typical section are respectively (λ1, λ2).

[0025] As a further improvement of the application, in the step c, each characteristic wavelength point corresponds to a chip subunit in the arrayed chip of the spectral MEMS Fabry-Perot cavity, and the chip subunits are arranged in a square matrix arrangement.

[0026] As a further improvement of the application, in the step d, the step d comprises:

[0027] In the arrayed arrangement of the sub-chips, the sub-chips of adjacent characteristic wavelength points are spaced apart by a specific spacing arrangement, and the specific spacing arrangement is a head-tail spacing arrangement or a head-middle spacing arrangement.

[0028] As a further improvement of the application, in the step d, the head-tail spacing arrangement is adopted, and specifically, the wavelength ranges of the M characteristic wavelength points are set as (K1, K2, …, K M ), the characteristic wavelength point corresponding to the first chip subunit in the arrayed chip of the spectral MEMS Fabry-Perot cavity is K1nm, the characteristic wavelength point corresponding to the second chip subunit is K M nm, the characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is K M-1 nm, and so on until the sequential arrangement of all characteristic wavelength points is completed.

[0029] As a further improvement of the application, in the step d, the head-middle spacing arrangement is adopted, and the wavelength ranges of the M characteristic wavelength points are set as (K1, K2, …, K M ), if M is even, the middle value point is taken as The characteristic wavelength point corresponding to the first chip subunit in the arrayed chip of the spectral MEMS Fabry-Perot cavity is K1nm, the characteristic wavelength point corresponding to the second chip subunit is The characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is nm, and so on until the sequential arrangement of all characteristic wavelength points is completed. The characteristic wavelength point corresponding to the first chip subunit in the arrayed chip of the spectral MEMS Fabry-Perot cavity is K1nm, the characteristic wavelength point corresponding to the second chip subunit is The characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is nm, and so on until the sequential arrangement of all characteristic wavelength points is completed.

[0030] Compared with the prior art, the application has the following advantages and beneficial effects:

[0031] The application is fully compatible with a single-point MEMS spectrum chip wafer process, converts a single-point MEMS spectrum chip into an array-type MEMS spectrum chip, and effectively improves the collection efficiency and stability of a spectrum MEMS Fabry-Perot cavity chip through static multi-channel collection. Meanwhile, the wavelength point equal-division type arrangement of a traditional single-point spectrum MEMS Fabry-Perot cavity chip is converted into a typical type arrangement based on sample absorption peaks, further increases the amount of information obtained from the components of the sample to be measured, improves the accuracy of spectrum analysis, and significantly promotes the development of miniaturized near-infrared spectrum technology. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 A method flow chart for arranging an array-type spectrum MEMS chip based on sample absorption peaks in the embodiment of the application is shown in FIG. 1.

[0033] Figure 2 A chip subunit arrangement method when m is an integer in the embodiment of the application is shown in FIG. 2.

[0034] Figure 3 A chip subunit arrangement method when m is not an integer in the embodiment of the application is shown in FIG. 3.

[0035] Figure 4 A first-end arrangement method of characteristic wavelength points in the embodiment of the application is shown in FIG. 4.

[0036] Figure 5 A first-middle arrangement method of characteristic wavelength points in the embodiment of the application is shown in FIG. 5. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the application will be described clearly and completely below with reference to the drawings in the embodiments of the application. Obviously, the described embodiments are only part of the embodiments of the application, rather than all the embodiments of the application. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the application.

[0038] Embodiment:

[0039] The method flow chart for arranging an array-type spectrum MEMS chip based on sample absorption peaks is described in detail. Figures 1-5 The method flow chart for arranging an array-type spectrum MEMS chip based on sample absorption peaks is described in detail.

[0040] Figure 1 The number of wavelength points contained in each typical section in the typical type arrangement method of wavelength points of a spectrum MEMS Fabry-Perot cavity chip is shown in FIG. 1. The wavelength point equal-division type arrangement of a traditional single-point spectrum MEMS Fabry-Perot cavity chip is converted into a typical type arrangement based on sample absorption peaks,

[0041] The specific embodiment based on the arrangement of sample absorption peaks is as follows: the wavelength points of the spectral MEMS Fabry-Perot cavity chip are divided into two typical sections, i.e., a characteristic typical section and a non-characteristic typical section. The characteristic typical section is divided by taking the actual sample component content spectral absorption peak as the center, and the non-characteristic typical section is divided by taking the wavelength points far from the spectral absorption peak. The number of wavelength points contained in the characteristic typical section is greater than the number of wavelength points contained in the non-characteristic typical section, so that more characteristic information of the sample to be measured can be collected and acquired, and the spectral analysis accuracy is improved.

[0042] In the embodiment, if the ratio of the number of wavelength points of the characteristic typical section to the number of wavelength points of the non-characteristic typical section is T1:T2, the spectral MEMS Fabry-Perot cavity chip wavelength response range is (λ1-λ2) nm, and the spectral characteristic wavelength points contained are M, then the number of wavelength points contained in the characteristic typical section and the non-characteristic typical section can be calculated as follows:

[0043]

[0044] Wherein, A1 is the number of wavelength points contained in the characteristic typical section, and A2 is the number of wavelength points contained in the non-characteristic typical section.

[0045] Since A1 and A2 are both the number of wavelength points, i.e., integers, when A1 and A2 contain decimals calculated by the above formula, the number of wavelength points contained in the characteristic typical section is rounded up, and the number of wavelength points contained in the non-characteristic typical section is rounded down. For example, taking A1=15.3 and A2=6.7 as an example, after final rounding, A1=16 and A2=6, i.e., the number of wavelength points contained in the characteristic typical section and the non-characteristic typical section is 16 and 6 respectively.

[0046] Figure 1 The step S102 is to calculate the characteristic wavelength points contained in each typical section according to the wavelength response range of the spectral MEMS Fabry-Perot cavity chip. In order to collect and acquire more characteristic information of the sample to be measured, the density of the characteristic wavelength points in the characteristic typical section needs to be improved, and the characteristic wavelength points contained in each typical section are calculated based on the uniform wavelength point division method. The specific steps are as follows:

[0047] The wavelength range H1 between the adjacent two characteristic wavelength points is:

[0048]

[0049] If the wavelength point density of the characteristic typical section is b times of the uniform wavelength point density, i.e., the wavelength range H1 between the adjacent two characteristic wavelength points of the uniform wavelength point division method, then the wavelength range H2 between the adjacent two characteristic wavelength points of the characteristic typical section is H2=H1 / b, and the wavelength range H3 of the characteristic typical section can be calculated as:

[0050] H3 = (A1 - 1) * H2;

[0051] Further, the wavelength range H4 of the non-characteristic typical section can be calculated as:

[0052] H4 = λ2 - λ1 - H3;

[0053] Further, the wavelength range H5 between two adjacent characteristic wavelength points of the non-characteristic typical section can be calculated as:

[0054] H5 = H4 / (A2 - 1)

[0055] From the above, if the wavelength value of the spectral absorption peak of the actual sample component content to be measured is λ3, when A1 is an odd number, the characteristic wavelength points contained in the characteristic typical section are [λ3 - (A1 - 1)H2, λ3 - 2H2, λ3 - H2, λ3] by taking the wavelength point of the spectral absorption peak of the sample to be measured as the center point for selecting the characteristic wavelength point. When A1 is an even number, the characteristic wavelength points contained in the characteristic typical section are [λ3 - (A1 - 1)H2, λ3 - 2H2, λ3 - H2, λ3] by taking the wavelength point of the spectral absorption peak of the sample to be measured as the center point for selecting the characteristic wavelength point.

[0056] If λ3 < λ1, it can be known that the minimum wavelength value in the characteristic typical section is less than the minimum value of the wavelength response range of the spectral MEMS Fabry-Perot cavity chip, and in this case, λ1 is set as λ1, that is, the starting wavelength point of the characteristic typical section is λ1, and it can be further known that the characteristic wavelength points contained in the characteristic typical section are [λ1, λ1 + H2, λ1 + 2H2, …, λ1 + (A1 - 1)H2], and the characteristic wavelength points contained in the non-characteristic typical section are [λ2 - (A2 - 1)H5, …, λ2 - 2H5, λ2 - H5, λ2]. If λ3 > λ2, it can be known that the maximum wavelength value in the characteristic typical section is greater than the maximum value of the wavelength response range of the spectral MEMS Fabry-Perot cavity chip, and in this case, λ2 is set as λ2, that is, the ending wavelength point of the characteristic typical section is λ2, and it can be further known that the characteristic wavelength points contained in the characteristic typical section are [λ2 - (A1 - 1)H2, …, λ2 - 2H2, λ2 - H2, λ2], and the characteristic wavelength points contained in the non-characteristic typical section are [λ1, λ1 + H5, λ1 + 2H5, …, λ1 + (A2 - 1)H5].

[0057] If λ1 < λ3 < λ2, it can be known that the wavelength range of the characteristic typical section is If λ1 < λ3 < λ2, it can be known that the wavelength range of the characteristic typical section is

[0058] If λ1 < λ3 < λ2, it can be known that the wavelength range of the characteristic typical section is If λ1 < λ3 < λ2, it can be known that the wavelength range of the characteristic typical section is ​​​If the wavelength range of the characteristic typical section is contained in the wavelength response range (λ1~λ2) of the spectral MEMS Fabry-Perot cavity chip, the feature wavelength points of the characteristic typical section do not need to be processed, and the feature wavelength range of the characteristic typical section is removed to further calculate the feature wavelength points of the non-characteristic typical section. In this case, the wavelength values of the first and last wavelength points of the non-characteristic typical section are (λ1, λ2), respectively.

[0059] Specifically, taking the wavelength response range of the spectral MEMS Fabry-Perot cavity chip as 1750~2050nm, containing 16 spectral wavelength points as an example, using the uniform wavelength point arrangement method, the wavelength range H1 between the two adjacent feature wavelength points of the MEMS Fabry-Perot cavity chip can be calculated as:

[0060]

[0061] Using the typical wavelength point arrangement method based on the sample absorption peak, if the wavelength point number ratio of the characteristic typical section to the non-characteristic typical section is set to 3:1, and the wavelength point density of the characteristic typical section is twice the uniform wavelength point density, then the number of feature wavelength points contained in the characteristic typical section can be calculated as 12, the number of wavelength points of the non-characteristic typical section is 4, and the wavelength interval between the two adjacent feature wavelength points in the characteristic typical section is H2=H1 / b=20 / 2=10nm. If the spectral absorption peak of the sample to be measured is 1935nm, the feature wavelength points of the characteristic typical section in the above case can be calculated by the above typical wavelength point division method as (1880nm, ……1930nm, 1940nm……1990nm). Since 1880nm≥1750nm and 1990nm≤2050nm, it can be known that the wavelength range of the characteristic typical section is contained in the wavelength response range of the spectral MEMS Fabry-Perot cavity chip, and the wavelength interval between the two adjacent feature wavelength points of the non-characteristic typical section can be calculated as:

[0062] H5= [(2050-1750)-(1990-1880)] / (4-1)=63.3nm.

[0063] Further, the feature wavelength points of the non-characteristic typical section are calculated as (1750nm, 1813.3nm, 1876.6nm, 2050nm).

[0064] Figure 1The 103 array is a scattering of sub-units in a spectral MEMS Fabry-Perot cavity chip, arranged in an array based on the number of characteristic wavelength points. In this array, each characteristic wavelength point corresponds to a sub-unit 100. The number of sub-units 100 can be determined based on the actual number of characteristic points. This chip array reduces the acquisition time from 1*M seconds for a single-point spectral MEMS Fabry-Perot cavity chip to just 1 second. Furthermore, to improve space utilization and reduce packaging requirements, a square matrix arrangement is used to array the sub-units.

[0065] In this embodiment, since the array-type spectral MEMS Fabry-Perot cavity chip contains M characteristic wavelength points, that is, the corresponding chip sub-units are also M. To arrange the M chip sub-units into a square matrix, it is necessary to first perform a square root operation on M to obtain its square root value. If m is an integer, such as Figure 2 As shown, the chip sub-units in the spectral MEMS Fabry-Perot cavity chip are arranged in an (m*m) square matrix; if m is not an integer, such as Figure 3 As shown, if M≤(m+1)*m, then the chip sub-units exceeding the (m*m) square matrix need to be arranged by adding a row or a column, specifically a square matrix of [m*(m+1)] or [(m+1)*m]; if M>(m+10*m), then the chip sub-units exceeding the (m*m) square matrix need to be arranged by adding both a row and a column, specifically a square matrix of [(m+1)*(m+1)].

[0066] Figure 1 In section 104, the sub-chip array is arranged sequentially using an interval arrangement method based on the wavelength values ​​of characteristic wavelength points. Since adjacent transmission wavelengths in a spectral MEMS Fabry-Perot cavity chip are prone to photoresponse crosstalk, i.e., two adjacent characteristic wavelength points are prone to crosstalk, which affects the detection performance of the spectral MEMS Fabry-Perot cavity chip, a specific method is needed to separate sub-chips with adjacent characteristic wavelength points when arranging the sub-chips in an array.

[0067] In this embodiment, the spacing arrangement is divided into end-to-end spacing or beginning-to-middle spacing. Taking a spectral MEMS Fabry-Perot cavity chip containing M characteristic wavelength points as an example, the wavelength ranges of the M characteristic wavelength points are set as (K1, K2, ... K). M ).like Figure 4 As shown, using a head-to-tail arrangement, in the array-type spectral MEMS Fabry-Perot cavity chip, the characteristic wavelength point corresponding to the first chip sub-unit is K1nm, and the characteristic wavelength point corresponding to the second chip sub-unit is K... Mnm, the characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is K M-1 nm, and so on, until the sequential arrangement of all characteristic wavelength points is completed.

[0068] Furthermore, such as Figure 5 As shown, a first-middle interval arrangement is adopted, and the wavelength ranges of the M characteristic wavelength points are set as (K1, K2, ... K). M If M is even, then the median point is taken as... In an array-type spectral MEMS Fabry-Perot cavity chip, the characteristic wavelength point corresponding to the first chip subunit is K1nm, and the characteristic wavelength point corresponding to the second chip subunit is... The characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is... This process continues until all characteristic wavelength points are arranged in sequence; if M is odd, then the median point is taken as... In an array-type spectral MEMS Fabry-Perot cavity chip, the characteristic wavelength point corresponding to the first chip subunit is K1nm, and the characteristic wavelength point corresponding to the second chip subunit is... The characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is... This process continues until all characteristic wavelength points are arranged in sequence.

[0069] Although the present invention has been described herein with reference to illustrative embodiments, the above embodiments are merely preferred embodiments of the present invention, and the implementation of the present invention is not limited to the above embodiments. It should be understood that those skilled in the art can devise many other modifications and implementations, which will fall within the scope and spirit of the principles disclosed in this application.

Claims

1. A method for arranging an array of spectral MEMS chips based on sample absorption peaks, characterized in that, The method comprises the following steps: Step a. Calculate the number of wavelength points contained in each typical section in the typical arrangement mode of the wavelength points of the spectral MEMS Fabry-Perot cavity chip; Step b. Calculate the characteristic wavelength points contained in each typical section according to the wavelength response range of the spectral MEMS Fabry-Perot cavity chip; Step c. Array the sub-units of the arrayed spectral MEMS Fabry-Perot cavity chip in an arrayed manner in combination with the number of characteristic wavelength points; Step d. Sequentially arrange the sub-chip array in a spaced arrangement mode in combination with the wavelength values of the characteristic wavelength points. In step a, the typical arrangement is based on the sample absorption peak, and the specific method is as follows: The wavelength points of the spectral MEMS Fabry-Perot cavity chip are divided into two typical sections, namely a characteristic typical section and a non-characteristic typical section, Wherein, the characteristic typical section is divided by the characteristic points centered on the actual sample component content spectrum absorption peak, and the non-characteristic typical section is divided by the wavelength points away from the spectrum absorption peak, and the number of wavelength points contained in the characteristic typical section is greater than the number of wavelength points contained in the non-characteristic typical section; Wherein, the number of wavelength points contained in the characteristic typical section is rounded up, and the non-characteristic typical section is rounded down. In step b, the characteristic wavelength points contained in each typical section are calculated based on the equal division type wavelength point division mode, and the specific steps include: b1. The wavelength response range of the spectral MEMS Fabry-Perot cavity chip is (λ1~λ2) nm, and the spectral characteristic wavelength points contained are M, and the wavelength range between adjacent two characteristic wavelength points is calculated b2. If the wavelength point density of the characteristic typical section is b times of the equal division type wavelength point density, the wavelength range between two adjacent characteristic wavelength points of the characteristic typical section is H2=H1 / b, and the wavelength range H3=(A1-1)*H2 of the characteristic typical section can be calculated, A1 is the number of wavelength points contained in the characteristic typical section; b3. Calculate the wavelength range H4=λ2-λ1-H3 of the non-characteristic typical section; b4. Calculate the wavelength range H5=H4 / (A2-1) between two adjacent characteristic wavelength points of the non-characteristic typical section, A2 is the number of wavelength points contained in the non-characteristic typical section; b5. Set the wavelength value of the actual sample component content spectrum absorption peak as λ3, and select the characteristic wavelength points by taking the wavelength point of the sample spectrum absorption peak as the center point to obtain the characteristic wavelength points contained in the characteristic typical section.

2. The method of claim 1, wherein the sample is a liquid sample. The characteristic wavelength points contained in the characteristic typical section are obtained by taking the wavelength point of the sample spectrum absorption peak as the center point. When A1 is an odd number, the wavelength points of the characteristic typical section are selected by taking the wavelength point of the absorption peak of the spectrum of the sample to be measured as a center point, and the characteristic wavelength points contained in the characteristic typical section are When A1 is an even number, the wavelength points of the characteristic typical section are selected by taking the wavelength point of the absorption peak of the spectrum of the sample to be measured as a center point, and the characteristic wavelength points contained in the characteristic typical section are 3. The method of claim 2, wherein the array of sample absorption peaks is arranged on a MEMS chip. In step b, the characteristic wavelength points contained in the characteristic typical section also include: If If the minimum wavelength value in the characteristic typical section is less than the minimum value of the wavelength response range of the spectral MEMS Fabry-Perot cavity chip, then the minimum wavelength value in the characteristic typical section is set as λ1, and the characteristic wavelength points contained in the characteristic typical section are respectively [λ1, λ1+H2, λ1+2H2, … λ1+(A1-1)H2], and the characteristic wavelength points contained in the non-characteristic typical section are further calculated as [λ2-(A2-1)H5, … λ2-2H5, λ2-H5, λ2]. If the minimum wavelength value in the characteristic typical section is less than the minimum value of the wavelength response range of the spectral MEMS Fabry-Perot cavity chip, then the minimum wavelength value in the characteristic typical section is set as λ1, and the characteristic wavelength points contained in the characteristic typical section are respectively [λ1, λ1+H2, λ1+2H2, … λ1+(A1-1)H2], and the characteristic wavelength points contained in the non-characteristic typical section are further calculated as [λ2-(A2-1)H5, … λ2-2H5, λ2-H5, λ2]. If If the maximum wavelength value in the characteristic typical section is greater than the maximum value of the wavelength response range of the spectral MEMS Fabry-Perot cavity chip, then the maximum wavelength value is set as λ2, and the characteristic wavelength points contained in the characteristic typical section are respectively [λ2-(A1-1)H2, …… λ2-2H2, λ2-H2, λ2], and the characteristic wavelength points contained in the non-characteristic typical section are respectively [λ1, λ1+H5, λ1+2H5, …… λ1+(A2-1)H5]; If the maximum wavelength value in the characteristic typical section is greater than the maximum value of the wavelength response range of the spectral MEMS Fabry-Perot cavity chip, then the maximum wavelength value is set as λ2, and the characteristic wavelength points contained in the characteristic typical section are respectively [λ2-(A1-1)H2, …… λ2-2H2, λ2-H2, λ2], and the characteristic wavelength points contained in the non-characteristic typical section are respectively [λ1, λ1+H5, λ1+2H5, …… λ1+(A2-1)H5]; like and The wavelength range of the characteristic typical segment can be known. Since all wavelengths are included in the wavelength response range λ1~λ2 of the spectral MEMS Fabry-Perot cavity chip, there is no need to process the characteristic wavelength points of the characteristic typical segment. After removing the characteristic wavelength range of the characteristic typical segment, the characteristic wavelength points of the non-characteristic typical segment are calculated. The wavelength values ​​of the first and last wavelength points of the non-characteristic typical segment are λ1 and λ2, respectively.

4. The method of claim 1, wherein the sample absorption peaks are arranged in an array on the MEMS chip. 5 In step c, in the array of the spectral MEMS Fabry-Perot cavity chip, each characteristic wavelength point corresponds to a chip sub-unit, and the chip sub-units are arranged in an arrayed manner by using a square matrix arrangement mode.

5. The method of claim 1, wherein the sample absorption peaks are arranged in an array on the MEMS chip. 5 In step d, the following steps are included: When the sub-chips are arranged in an arrayed manner, the sub-chips of adjacent characteristic wavelength points are spaced apart by using a specific interval arrangement mode, and the specific interval arrangement mode is a head-to-tail interval mode or a head-to-middle interval mode.

6. The method of claim 5, wherein the array of sample absorption peaks is arranged on a MEMS chip. In step d, the head-to-tail interval arrangement method is adopted, specifically, the wavelength ranges of the M characteristic wavelength points are respectively set as K1-K M In the arrayed spectrum MEMS Fabry-Perot cavity chip, the characteristic wavelength point corresponding to the first chip subunit is K1nm, the characteristic wavelength point corresponding to the second chip subunit is K M nm, the characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is K M-1 nm, and so on until the sequential arrangement of all characteristic wavelength points is completed.

7. The array-type spectral MEMS chip arrangement method based on sample absorption peaks as described in claim 5, characterized in that, In step d, a first-middle interval arrangement is adopted, and the wavelength ranges of the M characteristic wavelength points are set as K1~K1~K2. M If M is even, then the median point is taken as... In an array-type spectral MEMS Fabry-Perot cavity chip, the characteristic wavelength point corresponding to the first chip subunit is K1nm, and the characteristic wavelength point corresponding to the second chip subunit is... The characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is... This process continues until all characteristic wavelength points are arranged in sequence; if M is odd, then the median point is taken as... In an array-type spectral MEMS Fabry-Perot cavity chip, the characteristic wavelength point corresponding to the first chip subunit is K1nm, and the characteristic wavelength point corresponding to the second chip subunit is... The characteristic wavelength point corresponding to the third chip subunit is K2nm, and the characteristic wavelength point corresponding to the fourth chip subunit is... This process continues until all characteristic wavelength points are arranged in sequence.

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