Display device and method for manufacturing the same

Abstract

The display device includes: a substrate; a pixel electrode, which is arranged on the substrate and has a first part and a second part arranged outside the first part, the first part protrudes more on the second side than the second part, and the second side is opposite to the first side close to the substrate; a light-emitting layer, which is arranged to span the second side of the first part and the second side of the second part; a first edge cover, which is arranged to span the second side of the edge portion of the first part and the second side of the second part, and an opening is formed on the second side of the center portion of the first part and covers the edge of the first part; and a counter electrode, which has a portion arranged closer to the second side than the first edge cover, and the counter electrode is opposite to the pixel electrode across the light-emitting layer.

Description

Technical Field

[0001] The present disclosure relates to a display device and a method for manufacturing the display device. Background Art

[0002] The technology described in Patent Document 1 relates to a method for manufacturing an organic EL display device (paragraph 0036).

[0003] In this manufacturing method, a base layer having a height difference is formed (Paragraph 0038).

[0004] Next, a partition wall is formed to separate each pixel (Paragraphs 0025 and 0038). In the effective portion of the base layer exposed from the partition wall, a concave portion is formed from the central portion and the central portion is recessed by a step (Paragraph 0039). The surface of the partition wall has liquid repellency to the polymer material used to form the organic active layer (Paragraphs 0025 and 0038).

[0005] Next, a liquid material is applied toward the effective portion of the base layer to form a coating layer (Paragraphs 0027 and 0040).

[0006] Next, the coating layer is heated and dried to form an organic active layer including a light-emitting layer (Paragraphs 0023 and 0040).

[0007] According to this manufacturing method, when the liquid material is applied to the effective part of the base layer, the liquid material that has passed the partition wall and the liquid material that has reached the center of the effective part of the base layer easily flow down to the concave part of the effective part of the base layer (paragraph 0027). Therefore, it is possible to suppress the thin filming of the peripheral part of the organic active layer (paragraph 0027). Thus, it is possible to prevent a short circuit from occurring between the two electrodes (paragraph 0028). In addition, it is possible to suppress the reduction in the life of the thin filmed part of the organic active layer due to the concentration of current (paragraph 0028).

[0008] Prior art literature

[0009] Patent Literature

[0010] Patent Document 1: Japanese Patent Application Publication No. 2008-234932 Summary of the invention

[0011] Technical Problems to be Solved by the Invention

[0012] According to the above manufacturing method, the thinning of the peripheral portion of the organic active layer can be suppressed to some extent. However, since the thickness of the edge portion of the portion constituting the light-emitting layer formed on the central portion of the effective portion of the base layer cannot be made uniform, the current is concentrated in this portion, and the light-emitting layer cannot emit light uniformly as a whole.

[0013] This problem occurs in display devices other than organic EL display devices.

[0014] The present invention has been made in view of the above problems. An object of the present invention is to provide a display device and a method for manufacturing the display device that can make the light emission intensity in a light emission region uniform.

[0015] Technical solutions for solving technical problems

[0016] A display device according to one embodiment of the present invention includes: a substrate; a pixel electrode, which is arranged on the substrate and has a first portion and a second portion arranged outside the first portion, the first portion protruding more on a second side than the second portion, and the second side is opposite to the first side close to the substrate; a light-emitting layer, which is arranged to span the second side of the first portion and the second side of the second portion; a first edge cover, which is arranged to span the second side of the edge portion of the first portion and the second side of the second portion, and an opening is formed on the second side of the center portion of the first portion and covers the edge of the first portion; and a counter electrode, which has a portion arranged closer to the second side than the first edge cover, and the counter electrode is opposite to the pixel electrode via the light-emitting layer.

[0017] A method for manufacturing a display device according to another embodiment of the present invention includes: a) preparing a substrate; b) forming a pixel electrode, wherein the pixel electrode is arranged on the substrate and has a first portion and a second portion arranged outside the first portion, wherein the first portion protrudes further to a second side than the second portion, and the second side is opposite to the first side close to the substrate; c) forming a peeling layer outside the second portion; d) forming a light-emitting material layer, wherein the light-emitting material layer is formed to span the second side of the first portion, the second side of the second portion, and the second side of the peeling layer; e) forming a light-emitting layer, wherein the peeling layer and a portion of the light-emitting material layer formed on the second side of the peeling layer are peeled off, thereby forming the light-emitting layer configured to span from the light-emitting material layer to the second side of the first portion and the second side of the second portion; and f) forming an edge cover, wherein the edge cover is formed to span the second side of the edge portion of the first portion and the second side of the second portion, and an opening is formed on the second side of the center portion of the first portion and covers the edge of the first portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a plan view schematically illustrating the display device according to the first embodiment.

[0019] Figure 2 It is a plan view schematically illustrating each pixel included in the display device according to the first embodiment.

[0020] Figure 3 It is a cross-sectional view schematically illustrating each pixel included in the display device according to the first embodiment.

[0021] Figure 4 It is a cross-sectional view schematically illustrating each pixel included in the display device according to the first embodiment.

[0022] Figure 5 This is an enlarged cross-sectional view schematically showing the vicinity of a functional layer included in a display device according to a modification example of the first embodiment.

[0023] Fig. 6A This is an image of the upper surface of the light-emitting layer formed across the upper side of the convex portion of the base and the upper side of the concave portion of the base.

[0024] Figure 6B It is a cross-sectional view schematically showing a light-emitting layer formed across the upper side of the convex portion of the substrate and the upper side of the concave portion of the substrate.

[0025] Figure 6C It is a cross-sectional view schematically showing a light-emitting layer formed across the upper side of the convex portion of the substrate and the upper side of the concave portion of the substrate.

[0026] Figure 7 It is a cross-sectional view schematically illustrating each pixel included in a display device according to a modification example of the first embodiment.

[0027] Figure 8 It is a cross-sectional view schematically showing a pixel included in a display device according to a modification example of the first embodiment.

[0028] Fig. 9 1 is a flowchart showing the method for manufacturing the display device according to the first embodiment.

[0029] Fig.10 1 is a flowchart showing the method for manufacturing the display device according to the first embodiment.

[0030] Fig.11 This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0031] Fig.12 This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0032] Fig.13 This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0033] Fig.14This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0034] Fig.15 This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0035] Fig.16 This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0036] Fig.17 This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0037] Fig.18 This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0038] Fig.19 This is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device according to the first embodiment.

[0039] Fig. 20 It is a cross-sectional view schematically illustrating each pixel included in the display device according to the second embodiment.

[0040] Fig.21 It is a cross-sectional view schematically illustrating each pixel included in the display device according to the third embodiment.

[0041] Fig.22A This is a cross-sectional view schematically showing a state in which a liquid-repellent bank and a light-emitting layer are formed on a substrate in a display device.

[0042] Fig. 22B This is a cross-sectional view schematically showing a state in which a liquid-repellent bank and a light-emitting layer are formed on a substrate in a display device.

[0043] Fig. 22C This is a cross-sectional view schematically showing a state in which a lyophilic bank and a light-emitting layer are formed on a substrate in a display device.

[0044] Fig.23 This is a scanning transmission electron microscope (STEM) image of a cross section of an electroluminescent (EL) element produced by a lift-off process.

[0045] Fig.24 This is a plan view showing a state where an EL element manufactured by a lift-off process emits EL light. DETAILED DESCRIPTION

[0046] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. In addition, in the drawings, the same or equivalent elements are given the same reference numerals, and repeated descriptions are omitted.

[0047] 1 General discussion on the wetting behavior of the coating liquid according to the characteristics of the bank

[0048] Fig.22A and Fig. 22B It is a cross-sectional view schematically showing a state in which a liquid-repellent bank 92 and a light-emitting layer 94 are formed on a substrate in a display device. Fig.22A The case where the amount of the coating liquid applied to form the light emitting layer 94 is small is shown. Fig. 22B The case where the amount of coating liquid applied to form the light emitting layer 94 is large is shown.

[0049] like Fig.22A As shown in the figure, a liquid-repellent bank 92 and a light-emitting layer 94 are formed on a substrate 91. When the amount of coating liquid applied to form the light-emitting layer 94 is small, the thickness of the center portion of the light-emitting layer 94 becomes thicker and the thickness of the edge portion of the light-emitting layer 94 becomes thinner.

[0050] like Fig. 22B As shown in the figure, a liquid-repellent bank 92 and a light-emitting layer 94 are formed on a substrate 91. When a large amount of coating liquid is applied to form the light-emitting layer 94, the thickness of the center portion of the light-emitting layer 94 becomes thinner, and the thickness of the edge portion of the light-emitting layer 94 becomes thicker. In addition, an attachment 95 made of the same material as that constituting the light-emitting layer 94 is formed on the liquid-repellent bank 92. The attachment 95 has a large contact angle with the liquid-repellent bank 92.

[0051] When a multilayer coating is performed to form a layer other than the light-emitting layer 94 on the lyophobic bank 92, even if the lyophobic bank 92 is lyophobic, the base of the light-emitting layer 94 may not be lyophobic. In addition, when the lyophobic bank 92 is highly lyophobic, the adhesion of the light-emitting layer 94 to the lyophobic bank 92 is reduced. In addition, when the display device has a high resolution, the coating liquid applied to form the light-emitting layer 94 is repelled by the lyophobic bank 92, making it difficult to form the light-emitting layer 94 inside the opening of the lyophobic bank 92.

[0052] Fig. 22C It is a cross-sectional view schematically showing a state in which a lyophilic bank 93 and a light-emitting layer 94 are formed on a substrate 91 in a display device.

[0053] like Fig. 22CAs shown in FIG. 1 , in the case where the lyophilic bank 93 and the light-emitting layer 94 are formed on the substrate 91, the thickness of the center portion of the light-emitting layer 94 is thin, and the thickness of the edge portion of the light-emitting layer 94 is thick. In addition, the attached substance 95 made of the same material as the material constituting the light-emitting layer 94 is formed on the lyophilic bank 93. The attached substance 95 has only a small contact angle with respect to the lyophilic bank 93. Therefore, the attached substance 95 spreads to the corners of the convex portion formed by the lyophilic bank 93.

[0054] Fig.23 This is a scanning transmission electron microscope (STEM) image of a cross section of an electroluminescent (EL) element produced by a lift-off process. The horizontal dimension of this STEM image is compressed to 1 / 3. Fig.24 It is a planar image showing the state in which the EL element performs EL light emission.

[0055] like Fig.23 As shown, the EL element includes a substrate 901 , a pixel electrode 902 , a hole injection layer 903 , a hole transport layer 904 , a light emitting layer 905 , an electron transport layer 906 , a common electrode 907 , and a hydrophilic bank 908 .

[0056] The EL element is designed so that the thickness of the functional layer composed of the hole injection layer 903, the hole transport layer 904, the light emitting layer 905 and the electron transport layer 906 is 120nm. However, in the EL element, the thickness of the functional layer is not uniform in the light emitting area. Specifically, the thickness of the functional layer becomes thinner in the center of the pixel, and the thickness of the functional layer becomes thicker at the edge of the pixel. As a result, there is a difference of about 50nm between the thickness of the functional layer in the center of the pixel and the thickness of the functional layer at the edge of the pixel. In this way, when the thickness of the functional layer becomes uneven in the light emitting area, the current density becomes uneven in the light emitting area. Fig.24 As shown, the luminous intensity becomes uneven in the luminous region, and the degradation of the portion with high current density is aggravated. Specifically, the current density in the central portion of the pixel where the thickness of the functional layer is thinner becomes higher, the luminous intensity in the central portion of the pixel becomes stronger, and the degradation in the central portion of the pixel is aggravated.

[0057] 2 First Embodiment

[0058] 2.1 Planar structure of display device

[0059] Figure 1 It is a plan view schematically illustrating the display device 1 according to the first embodiment.

[0060] The display device 1 is an organic light emitting diode (OLED) display device, a quantum dot light emitting diode (QLED) display device, etc. Hereinafter, the display device 1 is assumed to be a QLED display device.

[0061] like Figure 1As shown, the display device 1 includes a plurality of pixels P.

[0062] The plurality of pixels P are arranged in a matrix. The plurality of pixels P may also be arranged in a non-matrix form.

[0063] 2.2 Planar and cross-sectional structures of pixels

[0064] Figure 2 It is a plan view schematically illustrating each pixel P included in the display device 1 according to the first embodiment. Figure 3 as well as Figure 4 It is a cross-sectional view schematically illustrating each pixel included in the display device according to the first embodiment. Figure 3 The diagram shows Figure 2 The cross section at the location of the cutting line III-III is depicted in FIG. Figure 4 The diagram shows Figure 2 The cross section is taken at the position of the cutting line IV-IV depicted in FIG.

[0065] Figure 2 ,like Figure 3 and Figure 4 As shown, the display device 1 includes pixels R, G, and B. The pixels R, G, and B are sub-pixels included in each pixel P included in a plurality of pixels P. Therefore, each pixel P includes three sub-pixels that emit red, green, and blue light, respectively. The number of sub-pixels included in each pixel P may also be increased or decreased from 3. In this case, each pixel P may include a sub-pixel that emits light of a color other than red, green, and blue, or may include a plurality of sub-pixels that emit light of the same color.

[0066] The pixels R, G, and B emit red, green, and blue light, respectively. The pixels R, G, and B may emit light of colors different from red, green, and blue, respectively.

[0067] The two pixels R and G included in each pixel P are adjacent to each other. The two pixels G and B included in each pixel P are adjacent to each other. The two pixels B and R included in each of the two adjacent pixels P are adjacent to each other.

[0068] like Figure 2 , Figure 3 and Figure 4 As shown, the display device 1 includes a substrate 11, wirings 12R, 12G and 12B, inorganic material structures 13R, 13G and 13B, an interlayer insulating film 14, connecting conductors 15R, 15G and 15B, pixel electrodes 16R, 16G and 16B, light-emitting layers 18R, 18G and 18B, and a common electrode 20. The substrate 11, wirings 12R, 12G and 12B, inorganic material structures 13R, 13G and 13B, the interlayer insulating film 14, and connecting conductors 15R, 15G and 15B constitute an array substrate 25.

[0069] The substrate 11, the interlayer insulating film 14 and the common electrode 20 are arranged across a plurality of pixels P. Wiring 12R, 12G and 12B, inorganic material structures 13R, 13G and 13B, connecting conductors 15R, 15G and 15B, pixel electrodes 16R, 16G and 16B and light emitting layers 18R, 18G and 18B are arranged on each pixel P.

[0070] The substrate 11, the interlayer insulating film 14, and the common electrode 20 are arranged across the pixels R, G, and B. The wiring 12R, the inorganic material structure 13R, the connecting conductor 15R, the pixel electrode 16R, and the light-emitting layer 18R are arranged on the pixel R. The wiring 12G, the inorganic material structure 13G, the connecting conductor 15G, the pixel electrode 16G, and the light-emitting layer 18G are arranged in the pixel G. The wiring 12B, the inorganic material structure 13B, the connecting conductor 15B, the pixel electrode 16B, and the light-emitting layer 18B are arranged in the pixel B.

[0071] like Figure 3 and Figure 4 As shown, the display device 1 includes edge covers 21RG, 21GB, and 21BR.

[0072] The edge mask 21RG divides the pixel R and the pixel G. The edge mask 21GB divides the pixel G and the pixel B. The edge mask 21BR divides the pixel B and the pixel R.

[0073] A substrate 11 , wirings 12R, 12G and 12B, inorganic material structures 13R, 13G and 13B, an interlayer insulating film 14 , connecting conductors 15R, 15G and 15B, pixel electrodes 16R, 16G and 16B, light-emitting layers 18R, 18G and 18B and a common electrode 20 are arranged on the substrate 11 .

[0074] Hereinafter, a first side of an element disposed on the substrate 11 close to the substrate 11 is referred to as the lower side of the element. Also, a second side of the element opposite to the first side of the element is referred to as the upper side of the element.

[0075] The wirings 12R, 12G, and 12B and the inorganic material structures 13R, 13G, and 13B are arranged on the upper side of the substrate 11. The interlayer insulating film 14 is arranged on the upper side of the substrate 11 so as to overlap with the wirings 12R, 12G, and 12B and the inorganic material structures 13R, 13G, and 13B. Contact holes 14R, 14G, and 14B are formed in the interlayer insulating film 14. The connecting conductors 15R, 15G, and 15B are arranged inside the contact holes 14R, 14G, and 14B, respectively. The pixel electrodes 16R, 16G, and 16B are arranged on the upper side of the interlayer insulating film 14. The wirings 12R, 12G, and 12B have portions arranged on the lower side of the contact holes 14R, 14G, and 14B, respectively. The connection conductors 15R, 15G, and 15B are connected to the wirings 12R, 12G, and 12B near the lower ends of the contact holes 14R, 14G, and 14B, respectively. Thus, the connection conductor 15R electrically connects the pixel electrode 16R and the wiring 12R to each other. The connection conductor 15G electrically connects the pixel electrode 16G and the wiring 12G to each other. The connection conductor 15B electrically connects the pixel electrode 16B and the wiring 12B to each other.

[0076] In the display device 1, the inorganic material structures 13R, 13G and 13B are switching elements. The switching element is a thin film transistor (TFT) or the like. The pixel electrode 16R is electrically connected to the switching element 13R via the connecting conductor 15R and the wiring 12R. The pixel electrode 16G is electrically connected to the switching element 13G via the connecting conductor 15G and the wiring 12G. The pixel electrode 16B is electrically connected to the switching element 13B via the connecting conductor 15B and the wiring 12B.

[0077] The light-emitting layers 18R, 18G, and 18B are respectively arranged on the upper side of the pixel electrodes 16R, 16G, and 16B. The edge cover 21RG is arranged across the upper side of the edge 16RE of the pixel electrode 16R, the upper side of the edge 18RE of the light-emitting layer 18R, the upper side of the edge 16GE of the pixel electrode 16G, and the upper side of the edge 18GE of the light-emitting layer 18G. The edge cover 21GB is arranged across the upper side of the edge 16GE of the pixel electrode 16G, the upper side of the edge 18GE of the light-emitting layer 18G, the upper side of the edge 16BE of the pixel electrode 16B, and the upper side of the edge 18BE of the light-emitting layer 18B. The edge cover 21BR is arranged across the upper side of the edge 16BE of the pixel electrode 16B, the upper side of the edge 18BE of the light-emitting layer 18B, the upper side of the edge 16RE of the pixel electrode 16R, and the upper side of the edge 18RE of the light-emitting layer 18R. The common electrode 20 is arranged across the upper side of the light-emitting layers 18R, 18G and 18B and the upper side of the edge covers 21RG, 21GB and 21BR. Therefore, the common electrode 20 has a portion arranged on the upper side of the light-emitting layers 18R, 18G and 18B, and becomes a counter electrode that faces the pixel electrodes 16R, 16G and 16B respectively across the light-emitting layers 18R, 18G and 18B. In addition, the common electrode 20 has a portion arranged on the upper side of the edge covers 21RG, 21GB and 21BR. Therefore, the edge covers 21RG, 21GB and 21BR have a portion arranged between the light-emitting layers 18R, 18G and 18B and the common electrode 20.

[0078] 2.3 Luminescence of light-emitting elements

[0079] The pixel electrodes 16R, 16G, and 16B are electrically connected to the light emitting layers 18R, 18G, and 18B, respectively. Thus, the first charges can be injected from the pixel electrodes 16R, 16G, and 16B to the light emitting layers 18R, 18G, and 18B, respectively.

[0080] The common electrode 20 is electrically connected to the light emitting layers 18R, 18G, and 18B. Thus, the second charges can be injected from the common electrode 20 into the light emitting layers 18R, 18G, and 18B.

[0081] When a potential difference is applied between the pixel electrode 16R and the common electrode 20, a first charge is injected from the pixel electrode 16R into the light-emitting layer 18R. In addition, a second charge is injected from the common electrode 20 into the light-emitting layer 18R. As a result, the first charge and the second charge are recombined in the light-emitting layer 18R. Therefore, the light-emitting layer 18R emits red light. When a potential difference is applied between the pixel electrode 16G and the common electrode 20, a first charge is injected from the pixel electrode 16G into the light-emitting layer 18G. In addition, a second charge is injected from the common electrode 20 into the light-emitting layer 18G. As a result, the first charge and the second charge are recombined in the light-emitting layer 18G. Therefore, the light-emitting layer 18G emits green light. When a potential difference is applied between the pixel electrode 16B and the common electrode 20, a first charge is injected from the pixel electrode 16B into the light-emitting layer 18B. In addition, a second charge is injected from the common electrode 20 into the light-emitting layer 18B. As a result, the first charge and the second charge are recombined in the light-emitting layer 18B. Therefore, the light-emitting layer 18B emits blue light.

[0082] 2.4 Inverted structure and conventional structure

[0083] The display device 1 has an inverted structure or a normal structure.

[0084] In the case where the display device 1 has an inverted structure, the first charges are electrons. In addition, the second charges are holes. In addition, the pixel electrodes 16R, 16G, and 16B are cathodes. In addition, the common electrode 20 is an anode.

[0085] In the case where the display device 1 has a conventional structure, the first charges are holes. In addition, the second charges are electrons. In addition, the pixel electrodes 16R, 16G, and 16B are anodes. In addition, the common electrode 20 is a cathode.

[0086] 2.5 Functional Layer

[0087] Figure 5 This is an enlarged cross-sectional view schematically showing the vicinity of a functional layer included in a display device 1 m according to a modification of the first embodiment.

[0088] like Figure 5 As shown in the figure, the display device 1 m includes functional layers 17 and 19 .

[0089] The functional layer 17 is arranged between the pixel electrode 16R and the light-emitting layer 18R, between the pixel electrode 16G and the light-emitting layer 18G, and between the pixel electrode 16B and the light-emitting layer 18B, and transmits the first charge. The functional layer 19 is arranged between the light-emitting layer 18R and the common electrode 20, between the light-emitting layer 18G and the common electrode 20, and between the light-emitting layer 18B and the common electrode 20, and transmits the second charge.

[0090] like Figure 5As shown, the functional layer 17 includes at least one selected from the group consisting of a charge injection layer 171, a charge transport layer 172, and a charge blocking layer 173. The functional layer 19 includes at least one selected from the group consisting of a charge injection layer 191, a charge transport layer 192, and a charge blocking layer 193.

[0091] In the case where the display device 1m has an inverted structure, the charge injection layer 171, the charge transport layer 172 and the charge blocking layer 173 are respectively an electron injection layer, an electron transport layer and an electron blocking layer. In addition, the charge injection layer 191, the charge transport layer 192 and the charge blocking layer 193 are respectively a hole injection layer, a hole transport layer and a hole blocking layer.

[0092] In the case where the display device 1m has a conventional structure, the charge injection layer 171, the charge transport layer 172 and the charge blocking layer 173 are respectively a hole injection layer, a hole transport layer and a hole blocking layer. In addition, the charge injection layer 191, the charge transport layer 192 and the charge blocking layer 193 are respectively an electron injection layer, an electron transport layer and an electron blocking layer.

[0093] The functional layers 17 and 19 are not patterned. Thus, the functional layer 17 is arranged over the entire lower side of the light-emitting layers 18R, 18G, and 18B, and becomes the base of the light-emitting layers 18R, 18G, and 18B. Thus, the wettability of the base of the light-emitting material layers 44R, 44G, and 44B becomes uniform in the entire range where the light-emitting layers 18R, 18G, and 18B are arranged. Thus, it becomes easy to form the light-emitting material layers 44R, 44G, and 44B by coating, and to form the light-emitting layers 18R, 18G, and 18B by patterning the light-emitting material layers 44R, 44G, and 44B.

[0094] 2.6 Materials constituting each layer

[0095] The pixel electrodes 16R, 16G and 16B and the common electrode 20 are made of a conductive material. The conductive material, for example, includes at least one selected from the group consisting of metals and transparent conductive oxides. The metal, for example, includes at least one selected from the group consisting of Al, Cu, Au and Ag. The transparent conductive oxide, for example, includes at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (znO), aluminum zinc oxide (AZO) and boron zinc oxide (BZO). Each of the pixel electrodes 16R, 16G and 16B and the common electrode 20 may be a layer made of a conductive material, or a stack of two or more layers made of two or more conductive materials different from each other. The two or more layers may simultaneously include a layer made of a metal and a layer made of a transparent conductive oxide.

[0096] The electron transport layer is composed of an electron transport material. The electron transport material, for example, includes at least one selected from the group consisting of zinc oxide, magnesium zinc oxide, titanium oxide, and strontium titanium oxide. Zinc oxide is, for example, ZnO. Titanium oxide is, for example, TiO2. Strontium titanium oxide is, for example, SrTiO3. The electron transport material may be an electron transport material composed of one substance or a mixture of two or more substances.

[0097] The hole transport layer is composed of a hole transport material. The hole transport material, for example, includes at least one selected from the group consisting of a hole transport inorganic material and a hole transport organic material. The hole transport inorganic material, for example, includes at least one selected from the group consisting of metal oxides, nitrides and carbides. The metal includes at least one selected from Zn, Cr, Ni, Ti, Nb, Al, Si, Mg, Ta, Hf, Zr, Y, La, Sr and Mo. The hole transport material contains at least one selected from the group consisting of 4,4′,4″-tri(9-carbazolyl)triphenylamine (TCTA), 4,4′-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (NPB), zinc phthalocyanine (ZnPC), bis[4-(N,N-dimethylphenylamino)phenyl]cyclohexane (TAPC), 4,4′-bis(carbazol-9-yl)biphenyl (CBP), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazaphenylene (H ATCN), poly(N-vinylcarbazole) (PVK), poly(2,7-(9,9-di-n-octylfluorene)-(1,4-phenylene-((4-tert-butylphenyl)imino)-1,4-phenylene (TFB), poly(triphenylamine) derivative (Poly-TPD), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonic acid) (PEDOT-PSS). The hole transport material may be a hole transport material composed of one substance or a hole transport material composed of a mixture of two or more substances.

[0098] The light-emitting layers 18R, 18G and 18B are composed of a red light-emitting material, a green light-emitting material and a blue light-emitting material. Each of the light-emitting materials of the red light-emitting material, the green light-emitting material and the blue light-emitting material includes quantum dots. The quantum dots are, for example, semiconductor particles having a particle size of less than 100 nm. The semiconductor particles include, for example, at least one selected from the group consisting of II-VI compounds, III-V compounds, IV compounds and compounds having a perovskite structure. The II-VI compounds include, for example, at least one selected from MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe and HgTe. The III-V compounds include, for example, at least one selected from the group consisting of GaAs, GaP, InN, InAs, InP and InSb. The IV compounds include, for example, at least one selected from the group consisting of Si and Ge. In the case where the semiconductor particles include a compound having a perovskite structure, the compound having a perovskite structure is, for example, a composite halide perovskite. The composite halide perovskite, for example, includes at least one selected from the group consisting of Cl, Br and I. The semiconductor particles can be semiconductor particles consisting of the crystal, or semiconductor particles having a core / shell structure and a core consisting of the crystal and a shell material having a wide bandgap and a shell coated with the core. In the case where the display device 1 is an OLED display device, each luminescent material includes a polymer organic luminescent material.

[0099] The edge covers 21RG, 21GB, and 21BR are made of an insulator.

[0100] 2.7 Uniformity of luminous intensity

[0101] like Figure 2 , Figure 3 and Figure 4 As shown in FIG. 1 , the pixel electrodes 16R, 16G, and 16B include convex first portions 161R, 161G, and 161B, respectively. In addition, the pixel electrodes 16R, 16G, and 16B include concave second portions 162R, 162G, and 162B, respectively.

[0102] The first portions 161R, 161G, and 161B are respectively present in the central portions of the pixel electrodes 16R, 16G, and 16B. The second portions 162R, 162G, and 162B are respectively present in the edge portions of the pixel electrodes 16R, 16G, and 16B. Therefore, the second portions 162R, 162G, and 162B are respectively arranged outside the first portions 161R, 161G, and 161B. The first portions 161R, 161G, and 161B are respectively protruded upwards more than the second portions 162R, 162G, and 162B.

[0103] The steps of the first part 161R and the second part 162R are formed by the inorganic material structure 13R. The steps of the first part 161G and the second part 162G are formed by the inorganic material structure 13G. The steps of the first part 161B and the second part 162B are formed by the inorganic material structure 13B. The inorganic material structures 13R, 13G and 13B are respectively arranged on the upper side of the pixel electrodes 16R, 16G and 16B. The inorganic material structures 13R, 13G and 13B have a first height at the lower side of the first part 161R, 161G and 161B, and have a second height lower than the first height at the lower side of the second part 162R, 162G and 162B. Thus, the interlayer insulating film 14 includes first film portions 141R, 141G, and 141B respectively disposed on the lower side of the first portions 161R, 161G, and 161B, and second film portions 142R, 142G, and 142B respectively disposed on the lower side of the second portions 162R, 162G, and 162B, and the first portions 161R, 161G, and 161B protrude upward more than the second portions 162R, 162G, and 162B, respectively. The second height may be 0. That is, the inorganic material structures 13R, 13G, and 13B may also be disposed centrally on the lower side of the first portions 161R, 161G, and 161B. The height difference may also be formed by other methods. For example, the interlayer insulating film 14 may be formed by photolithography so that the thickness of the interlayer insulating film 14 is thicker under the first portions 161R, 161G, and 161B and the thickness of the interlayer insulating film 14 is thinner under the second portions 162R, 162G, and 162B.

[0104] The light emitting layer 18R is arranged across the upper side of the first portion 161R and the upper side of the second portion 162R. The light emitting layer 18G is arranged across the upper side of the first portion 161G and the upper side of the second portion 162G. The light emitting layer 18B is arranged across the upper side of the first portion 161B and the upper side of the second portion 162B.

[0105] The central portion of the light-emitting layer 18R configured on the upper side of the first portion 161R is a convex portion overlapping with the first portion 161R. In addition, the edge portion of the light-emitting layer 18R configured on the upper side of the second portion 162R is a concave portion overlapping with the second portion 162R. The concave portion is continuous from the convex portion. The concave portion is along the entire periphery of the light-emitting layer 18R. In addition, the central portion of the light-emitting layer 18G configured on the upper side of the first portion 161G is a convex portion overlapping with the first portion 161G. In addition, the central portion of the light-emitting layer 18G configured on the upper side of the second portion 162G is a concave portion overlapping with the second portion 162G. The concave portion is continuous from the convex portion. The concave portion is along the entire periphery of the light-emitting layer 18G. In addition, the central portion of the light-emitting layer 18B configured on the upper side of the first portion 161B is a convex portion overlapping with the first portion 161B. The central portion of the light emitting layer 18B disposed on the upper side of the second portion 162B is a concave portion overlapping the second portion 162B. The concave portion is continuous from the convex portion and extends along the entire periphery of the light emitting layer 18B.

[0106] Fig. 6A This is an image of the upper surface of the light emitting layer 18R formed across the upper side of the convex portion of the base and the upper side of the concave portion of the base. Figure 6B and Figure 6C 18 is a cross-sectional view schematically showing a light emitting layer 18R formed continuously across the upper side of the base protrusions and the upper side of the base concave portions. Figure 6B The diagram shows Fig. 6A The cross section at the location of the cutting line BB is depicted in FIG. Figure 6C The diagram shows Fig. 6A A cross section at the location of the cutting line CC depicted in FIG.

[0107] like Fig. 6A , Figure 6B as well as Figure 6C As shown in FIG. 1 , when the light-emitting layer 18R is formed across the upper side of the convex portion of the base and the upper side of the concave portion of the lower base, the light-emitting layer 18R has a uniform thickness on the upper side of the central portion of the convex portion, but has a non-uniform thickness on the upper side of the edge portion of the convex portion. Therefore, when the entire portion of the light-emitting layer 18R formed on the upper side of the convex portion emits light, and the entire upper side of the convex portion is included in the light-emitting region 33R that emits red light, the light-emitting intensity in the light-emitting region 33R becomes non-uniform. This problem may also occur in the light-emitting layers 18G and 18B.

[0108] like Figure 3 and Figure 4As shown, the edge covers 21BR and 21RG are arranged across the upper side of the edge of the first part 161R and the upper side of the second part 162R. On the edge covers 21BR and 21RG, an opening 21R is formed on the upper side of the center of the first part 161R. The opening 21R does not overlap with the second part 162R. As a result, the portion of the light-emitting layer 18R arranged on the upper side of the edge of the first part 161R and having an uneven thickness is covered by the edge covers 21BR and 21RG. In addition, the portion of the light-emitting layer 18R arranged on the upper side of the center of the first part 161R and having a uniform thickness is not covered by the edge covers 21BR and 21RG. Therefore, the light-emitting region 33R that emits red light is limited to the portion having the uniform thickness. As a result, it is possible to suppress the current from being concentrated on the portion arranged on the upper side of the edge of the first part 161R that constitutes the light-emitting layer 18R and having a thin thickness, and the light-emitting intensity in the light-emitting region 33R can be made uniform.

[0109] Similarly, the edge covers 21RG and 21GB are arranged across the upper side of the edge of the first part 161G and the upper side of the second part 162G. In the edge covers 21RG and 21GB, an opening 21G is formed on the upper side of the center of the first part 161G. The opening 21G does not overlap with the second part 162G. Thus, the portion of the light-emitting layer 18G that is arranged on the upper side of the edge of the first part 161G and has an uneven thickness is covered by the edge covers 21RG and 21GB. In addition, the portion of the light-emitting layer 18G that is arranged on the upper side of the center of the first part 161G and has a uniform thickness is not covered by the edge covers 21RG and 21GB. Therefore, the light-emitting region 33G that emits green light is limited to the portion with the uniform thickness. Thus, it is possible to suppress the current from being concentrated on the portion that is arranged on the upper side of the edge of the first part 161G that constitutes the light-emitting layer 18G and has a thin thickness, and the light-emitting intensity in the light-emitting region 33G can be made uniform.

[0110] Similarly, the edge covers 21GB and 21BR are arranged across the upper side of the edge of the first part 161B and the upper side of the second part 162B. On the edge covers 21GB and 21BR, an opening 21B is formed on the upper side of the center of the first part 161B. The opening 21B does not overlap with the second part 162B. As a result, the portion of the light-emitting layer 18B that is arranged on the upper side of the edge of the first part 161B and has an uneven thickness is covered by the edge covers 21GB and 21BR. In addition, the portion of the light-emitting layer 18B that is arranged on the upper side of the center of the first part 161B and has a uniform thickness is not covered by the edge covers 21GB and 21BR. Therefore, the light-emitting region 33B that emits blue light is limited to the portion with the uniform thickness. As a result, it is possible to suppress the current from being concentrated on the portion of the light-emitting layer 18B that is arranged on the upper side of the edge of the first part 161B and has a thin thickness, and the light-emitting intensity in the light-emitting region 33B can be made uniform.

[0111] The edge covers 21BR and 21RG cover the edge 161RE of the first portion 161R, and the edge 161RE constitutes the boundary between the first portion 161R and the second portion 162R. Thus, the edge 161RE of the first portion 161R that is prone to degradation is separated from the common electrode 20. Thus, degradation of the pixel electrode 16R can be suppressed.

[0112] Similarly, the edge covers 21RG and 21GB cover the edge 161GE of the first portion 161G forming the boundary between the first portion 161G and the second portion 162G. Thus, the edge 161GE of the first portion 161G that is prone to degradation is separated from the common electrode 20. Thus, degradation of the pixel electrode 16G can be suppressed.

[0113] Similarly, the edge covers 21GB and 21BR cover the edge 161BE of the first portion 161B forming the boundary between the first portion 161B and the second portion 162B. Thus, the edge 161BE of the first portion 161B that is easily degraded is separated from the common electrode 20. Thus, degradation of the pixel electrode 16B can be suppressed.

[0114] The edge covers 21BR and 21RG cover the boundary between the convex part of the light emitting layer 18R and the concave part of the light emitting layer 18R, and the concave part of the light emitting layer 18R. The edge covers 21RG and 21GB cover the boundary between the convex part of the light emitting layer 18G and the concave part of the light emitting layer 18G, and the concave part of the light emitting layer 18G. The edge covers 21GB and 21BR cover the boundary between the convex part of the light emitting layer 18B and the concave part of the light emitting layer 18B, and the concave part of the light emitting layer 18B.

[0115] The contact holes 14R, 14G, and 14B are disposed outside the second portions 162R, 162G, and 162B, respectively. This can prevent the contact holes 14R, 14G, and 14B from interfering with the light-emitting layers 18R, 18G, and 18B, respectively.

[0116] The edge covers 21RG, 21GB, and 21BR may not have liquid repellency, but may have liquid affinity. In addition, the second portions 162R, 162G, and 162B may not be planarized by the light emitting layers 18R, 18G, and 18B.

[0117] 2.8 Overlap of luminous layers

[0118] like Figure 3 and Figure 4 As shown, two light-emitting layers respectively arranged in two adjacent pixels are separated from each other. For example, the light-emitting layers 18R and 18G respectively arranged in pixels R and G are separated from each other. In addition, the light-emitting layers 18G and 18B respectively arranged in pixels G and B are separated from each other. In addition, the light-emitting layers 18B and 18R respectively arranged in pixels B and R are separated from each other. Thus, crosstalk between the two pixels via the two light-emitting layers can be suppressed.

[0119] Figure 7 1 is a cross-sectional view schematically illustrating each pixel P included in a display device 1 n according to a modification example of the first embodiment.

[0120] like Figure 7 As shown, in the display device 1n, the edge portions of two light-emitting layers respectively arranged in two adjacent pixels overlap each other. For example, the edge portions of the light-emitting layers 18R and 18G respectively arranged in the pixels R and G overlap each other. In addition, the edge portions of the light-emitting layers 18G and 18B respectively arranged in the pixels G and B overlap each other. In addition, the edge portions of the light-emitting layers 18B and 18R respectively arranged in the pixels B and R overlap each other. Thus, the planar shape of the light-emitting layers 18R, 18G, and 18B can be enlarged. Thus, even in the case where the display device 1 has a high resolution, the light-emitting layers 18R, 18G, and 18B can be formed by patterning.

[0121] 2.9 Modification of Inorganic Material Structures

[0122] Figure 8 It is a cross-sectional view schematically showing a pixel R included in a display device 1 p according to a modification of the first embodiment.

[0123] like Figure 8As shown in FIG. 1 , in the display device 1p, the inorganic material structure 13R includes a first element 131R disposed on the lower side of the first portion 161R and a second element 132R disposed on the lower side of the second portion 162R. The number of the second elements 132R is less than the number of the first elements 131R. Thus, the amount of the material constituting the interlayer insulating film 14 on the lower side of the first portion 161R pushed up is greater than the amount of the material constituting the interlayer insulating film 14 on the lower side of the second portion 162R. Therefore, the first portion 161R protrudes further upward than the second portion 162R.

[0124] The first element 131R includes at least one selected from the group consisting of a first switching element, a first capacitor, and a first wiring. The second element 132R includes at least one selected from the group consisting of a second switching element, a second capacitor, and a second wiring.

[0125] In the display device 1p, the first portion 161R protrudes from the inorganic material structure 13R to a position above the second portion 162R, and the first portion 161G protrudes from the inorganic material structure 13G to a position above the second portion 162G. In addition, the first portion 161B protrudes upward more than the second portion 162B due to the inorganic material structure 13B.

[0126] 2.10 Method for manufacturing display device

[0127] Fig. 9 and Fig.10 1 is a flowchart showing a method for manufacturing the display device 1 according to the first embodiment. Figures 11 to 19 It is a cross-sectional view schematically showing an intermediate product obtained by the method for manufacturing the display device 1 according to the first embodiment.

[0128] like Fig. 9 and Fig.10 As shown, the method for manufacturing the display device 1 includes steps S101 to S116.

[0129] In step S101, prepare Fig.11 The array substrate 25 is shown. The array substrate 25 becomes a base substrate.

[0130] In the next step S102, a Fig.11 The connection conductors 15R, 15G and 15B and the pixel electrodes 16R, 16G and 16B are shown. The connection conductors 15R, 15G and 15B are formed inside the contact holes 14R, 14G and 14B, respectively. The pixel electrodes 16R, 16G and 16B are formed on the array substrate 25.

[0131] In the next step S103, a Fig.11The photoresist film 41R shown. The photoresist film 41R is formed on the array substrate 25 overlapping with the pixel electrodes 16R, 16G and 16B. The photoresist film 41R is composed of a positive resist. The positive resist is soluble in a developer when irradiated with a sensitive light. The sensitive light is ultraviolet rays, electron beams, etc. The developer is an alkaline solution, etc. The developer may contain a surfactant. The positive resist is composed of a material that is insoluble in a solvent contained in a coating liquid to be applied, and the coating liquid is applied to form a luminescent material layer 44R described below. The photoresist film 41R is formed by applying a coating liquid containing a positive resist and a solvent on the coated surface to form a coating film, and evaporating the solvent from the formed coating film by heating to form the photoresist film 41R. The coating liquid is TFR1000 manufactured by Tokyo Ohka Co., Ltd. The coating liquid is applied by die coating, ink jetting, spin coating or the like.

[0132] In the next step S104, the photoresist film 41R is Fig.11 The mask 42R shown is exposed. The exposed photoresist film 41R is developed. At this time, the portion of the photoresist film 41R formed on the upper side of the pixel electrode 16R is irradiated with light. The portion irradiated with light is dissolved in the developer.

[0133] Through steps S103 and S104, a Fig.12 The peeling layer 43R is shown. The peeling layer 43R is formed outside the second portion 162R. An opening is formed in the peeling layer 43R, which serves as a template for peeling. The second portion 162R is arranged inside the opening. The edge 16RE of the pixel electrode 16R may also be arranged inside the opening.

[0134] In the next step S105, a Fig.12 The light emitting material layer 44R is formed on the array substrate 25 in an overlapping manner with the pixel electrodes 16R, 16G and 16B and the peeling layer 43R. The light emitting material layer 44R is formed across the upper side of the first portion 161R, the upper side of the second portion 162R and the upper side of the peeling layer 43R. The light emitting material layer 44R is formed by applying a coating liquid containing a red light emitting material and a solvent to the coated surface to form a coating film, and by heating to evaporate the solvent from the formed coating film. The solvent is octane or the like.

[0135] In the next step S106, the peeling layer 43R and the portion of the light emitting material layer 44R formed on the upper side of the peeling layer 43R are peeled off. At this time, the peeling layer 43R is irradiated with a light-sensitive light. In addition, the peeling layer 43R irradiated with the light-sensitive light is dissolved in the developer. Thus, the light emitting material layer 44R to the peeling layer 43R are formed. Fig.13The light emitting layer 18R is shown. The light emitting layer 18R is formed across the upper side of the first portion 161R and the upper side of the second portion 162R.

[0136] In the case where the red light-emitting material is mainly composed of quantum dots, the light-emitting material layer 44R is an aggregate of nanoparticles. Therefore, in the case where the red light-emitting material is mainly composed of quantum dots, the light-emitting material layer 44R can allow the light-sensitive light and the developer to pass through. Therefore, in the case where the red light-emitting material is mainly composed of quantum dots, the light-sensitive light passing through the light-emitting material layer 44R can be irradiated to the peeling layer 43R, and the peeling layer 43R can be dissolved by the developer passing through the light-emitting material layer 44R. Therefore, in the case where the red light-emitting material is mainly composed of quantum dots, the light-emitting material layer 44R does not hinder the peeling of the peeling layer 43R. Alternatively, by dissolving a part of the photoresist film 41R, the cross-sectional shape of the opening formed in the peeling layer 43R is an inverted cone, so that the light-emitting material layer 44R can form a fractured portion by breaking the side wall portion of the opening, and the developer is soaked from the fractured portion, and the peeling layer 43R is dissolved by the developer. Therefore, the light-emitting material layer 44R does not hinder the peeling of the peeling layer 43R.

[0137] From steps S103 to S106 , the light emitting material layer 44R is patterned by a lift-off process to form the light emitting layer 18R.

[0138] In the next step S107, a Fig.14 The photoresist film 41G is formed on the array substrate 25 to overlap the pixel electrodes 16R, 16G and 16B and the light emitting layer 18R. The photoresist film 41G can be made of the same material as the photoresist film 41R and can be formed by the same method as the method of forming the photoresist film 41R.

[0139] In the next step S108, the photoresist film 41G is Fig.14 The mask 42G shown is exposed. The exposed photoresist film 41G is developed. At this time, the portion of the photoresist film 41G formed on the upper side of the pixel electrode 16G is irradiated with light. The portion irradiated with light is dissolved in the developer.

[0140] Through steps S107 and S108, a Fig.15 The peeling layer 43G is shown. The peeling layer 43G is formed outside the second portion 162G. An opening is formed in the peeling layer 43G, which serves as a template for peeling. The second portion 162G is arranged inside the opening. The edge 16GE of the pixel electrode 16G may also be arranged inside the opening.

[0141] In the next step S109, a Fig.15 The light emitting material layer 44G is shown. The light emitting material layer 44G is formed on the array substrate 25 in an overlapping manner with the pixel electrodes 16R, 16G and 16B, the light emitting layer 18R and the peeling layer 43G. The light emitting material layer 44G is formed across the upper side of the first portion 161G, the upper side of the second portion 162G and the upper side of the peeling layer 43G. The light emitting material layer 44G is formed by the same method as the method of forming the light emitting material layer 44R.

[0142] In the next step S110, the portion of the peeling layer 43G and the luminescent material layer 44G formed on the upper side of the peeling layer 43G is peeled off. At this time, the peeling layer 43G is irradiated with a light-sensitive light. In addition, the peeling layer 43G irradiated with the light-sensitive light is dissolved in the developer. Thus, the luminescent material layer 44G to the peeling layer 43G are formed. Fig.16 The light emitting layer 18G is shown. The light emitting layer 18G is formed across the upper sides of the first portion 161G and the second portion 162G.

[0143] Even when the green light emitting material is mainly composed of quantum dots, the light emitting material layer 44G does not hinder the peeling of the peeling layer 43G. Alternatively, by dissolving a portion of the photoresist film 41G, the cross-sectional shape of the opening formed in the peeling layer 43G is made into an inverted cone, so that the light emitting material layer 44G can be broken by the side wall of the opening to form a broken portion, and the developer penetrates from the broken portion, and the peeling layer 43G is dissolved by the developer. Therefore, the light emitting material layer 44G does not hinder the peeling of the peeling layer 43G.

[0144] From step S107 to step S110 , the light emitting material layer 44G is patterned by a lift-off process to form the light emitting layer 18G.

[0145] In the next step S111, Fig.17 The photoresist film 41B is formed on the array substrate 25 to overlap the pixel electrodes 16R, 16G and 16B and the light emitting layers 18R and 18G. The photoresist film 41B can be made of the same material as the photoresist film 41R and can be formed by the same method as the method of forming the photoresist film 41R.

[0146] In the next step S112, the photoresist film 41B is Fig.17 The mask 42B shown is exposed. The exposed photoresist film 41B is developed. At this time, the portion of the photoresist film 41B formed on the upper side of the pixel electrode 16B is irradiated with light. The portion irradiated with light is dissolved in the developer.

[0147] Through steps S111 and S112, a Fig.18The peeling layer 43B is shown. The peeling layer 43B is formed outside the second portion 162B. An opening is formed in the peeling layer 43B, which serves as a template for peeling. The second portion 162B is arranged inside the opening. The edge 16BE of the pixel electrode 16B can also be arranged inside the opening.

[0148] In the next step S113, a Fig.18 The light emitting material layer 44B is formed on the array substrate 25 so as to overlap with the pixel electrodes 16R, 16G and 16B, the light emitting layers 18R and 18G and the peeling layer 43B. The light emitting material layer 44B is formed across the upper side of the first portion 161B, the upper side of the second portion 162B and the upper side of the peeling layer 43B. The light emitting material layer 44B is formed by the same method as the method of forming the light emitting material layer 44R.

[0149] In the next step S114, the portion of the peeling layer 43B and the luminescent material layer 44B formed on the upper side of the peeling layer 43B is peeled off. At this time, the peeling layer 43B is irradiated with a sensitive light. In addition, the peeling layer 43B irradiated with the sensitive light is dissolved in the developer. Thus, the luminescent material layer 44B to the peeling layer 43B are formed. Fig.19 The light emitting layer 18B is shown. The light emitting layer 18B is formed across the upper side of the first portion 161B and the upper side of the second portion 162B.

[0150] In the case where the blue light-emitting material is mainly composed of quantum dots, the light-emitting material layer 44B does not hinder the peeling of the peeling layer 43B. Alternatively, by dissolving a portion of the photoresist film 41B, the cross-sectional shape of the opening formed in the peeling layer 43B is made into an inverted cone, so that the light-emitting material layer 44B can be broken by the side wall of the opening to form a broken portion, and the developer penetrates from the broken portion, and the peeling layer 43B is dissolved by the developer. In this way, the light-emitting material layer 44B is formed without hindering the peeling of the peeling layer 43B.

[0151] In the next step S115, a Figure 3 and Figure 4 The edge covers 21RG, 21GB and 21BR are shown. The edge covers 21RG, 21GB and 21BR are formed on the array substrate 25 so as to overlap with the pixel electrodes 16R, 16G, 16B and the light emitting layers 18R, 18G, 18B. The edge covers 21RG, 21GB and 21BR are formed by photolithography.

[0152] In the next step S116, Figure 3 and Figure 4The common electrode 20 is shown. The common electrode 20 is formed on the array substrate 25 to overlap with the pixel electrodes 16R, 16G and 16B, the light emitting layers 18R, 18G and 18B, and the edge covers 21RG, 21GB and 21BR.

[0153] The light-emitting layers 18R, 18G, and 18B may be formed by a process other than the stripping process. For example, the light-emitting layers 18R, 18G, and 18B may be formed by a mixed material of quantum dots and photoresists (QD-PR). In this case, the light-emitting layers 18R, 18G, and 18B may be directly formed by patterning based on photolithography.

[0154] 3. Second Embodiment

[0155] Hereinafter, the differences between the second embodiment and the first embodiment will be described. In the second embodiment, the same configuration as that adopted in the first embodiment is adopted also in the aspects not described.

[0156] Fig. 20 It is a cross-sectional view schematically illustrating each pixel P included in the display device 2 according to the second embodiment.

[0157] like Fig. 20 As shown, the display device 2 includes first edge covers 21RG, 21GB, and 21BR and second edge covers 22RG, 22GB, and 22BR.

[0158] The first edge covers 21RG, 21GB, and 21BR included in the display device 2 have the same functions as the first edge covers 21RG, 21GB, and 21BR included in the display device 1 .

[0159] Therefore, the first edge cover 21BR and 21RG are arranged across the upper side of the edge of the first part 161R and the upper side of the second part 162R. On the first edge cover 21BR and 21RG, an opening 21R is formed on the upper side of the center of the first part 161R. In addition, the first edge cover 21BR and 21RG cover the edge 161RE of the first part 161R. Thus, the portion of the light-emitting layer 18R arranged on the upper side of the edge of the first part 161R and having an uneven thickness is covered by the first edge cover 21BR and 21RG. In addition, the portion of the light-emitting layer 18R arranged on the upper side of the center of the first part 161R and having a uniform thickness is not covered by the first edge cover 21BR and 21RG. Therefore, the light-emitting region 33R is limited to the portion having the uniform thickness. Thus, the light-emitting intensity in the light-emitting region 33R can be made uniform.

[0160] Similarly, the first edge covers 21RG and 21GB are arranged across the upper side of the edge of the first part 161G and the upper side of the second part 162G. On the first edge covers 21RG and 21GB, an opening 21G is formed on the upper side of the center of the first part 161G. In addition, the first edge covers 21RG and 21GB cover the edge 161GE of the first part 161G. Thus, the portion of the light-emitting layer 18G, which is arranged on the upper side of the edge of the first part 161G and has an uneven thickness, is covered by the first edge covers 21RG and 21GB. In addition, the portion of the light-emitting layer 18G, which is arranged on the upper side of the center of the first part 161G and has a uniform thickness, is not covered by the first edge covers 21RG and 21GB. Therefore, the light-emitting region 33G is limited to the portion having the uniform thickness. Thus, the light-emitting intensity within the light-emitting region 33G can be made uniform.

[0161] Similarly, the first edge covers 21GB and 21BR are arranged across the upper side of the edge of the first part 161B and the upper side of the second part 162B. In addition, on the first edge covers 21GB and 21BR, an opening 21B is formed on the upper side of the center of the first part 161B. In addition, the first edge covers 21GB and 21BR cover the edge 161BE of the first part 161B. Thus, the portion of the light-emitting layer 18B that is arranged on the upper side of the edge of the first part 161B and has an uneven thickness is covered by the first edge covers 21GB and 21BR. In addition, the portion of the light-emitting layer 18B that is arranged on the upper side of the center of the first part 161B and has a uniform thickness is not covered by the first edge covers 21GB and 21BR. Therefore, the light-emitting region 33B is limited to the portion having the uniform thickness. Thus, the light-emitting intensity within the light-emitting region 33B can be made uniform.

[0162] The edge 18RE of the light emitting layer 18R rides over the second edge covers 22BR and 22RG. Therefore, the second edge covers 22BR and 22RG are arranged below the edge 18RE of the light emitting layer 18R. In addition, the second edge covers 22BR and 22RG cover the edge 16RE of the pixel electrode 16R.

[0163] Similarly, the edge 18GE of the light emitting layer 18G straddles the second edge covers 22RG and 22GB. Therefore, the second edge covers 22RG and 22GB are disposed below the edge 18GE of the light emitting layer 18G. In addition, the second edge covers 22RG and 22GB cover the edge 16GE of the pixel electrode 16G.

[0164] Similarly, the edge 18BE of the light emitting layer 18B straddles the second edge covers 22GB and 22BR. Therefore, the second edge covers 22GB and 22BR are arranged below the edge 18BE of the light emitting layer 18B. In addition, the second edge covers 22GB and 22BR cover the edge 16BE of the pixel electrode 16B.

[0165] The upper surfaces of the second edge covers 22BR and 22RG are flat. In addition, as described above, the edge 18RE of the light emitting layer 18R straddles the upper surfaces of the second edge covers 22BR and 22RG. Thus, the light emitting layer 18R can be formed by patterning the edge 18RE of the light emitting layer 18R on the flat upper surfaces of the second edge covers 22BR and 22RG. Therefore, it is easy to form the light emitting layer 18R by patterning.

[0166] Similarly, the upper surfaces of the second edge covers 22RG and 22GB are flat. In addition, as described above, the edge 18GE of the light-emitting layer 18G is placed on the upper surfaces of the second edge covers 22RG and 22GB. Thus, the light-emitting layer 18G can be formed by patterning the edge 18GE of the light-emitting layer 18G on the flat upper surfaces of the second edge covers 22RG and 22GB. Therefore, it is easy to form the light-emitting layer 18G by patterning.

[0167] Similarly, the upper surfaces of the second edge covers 22GB and 22BR are flat. In addition, as described above, the edge 18BE of the light-emitting layer 18B straddles the upper surfaces of the second edge covers 22GB and 22BR. Thus, the light-emitting layer 18B can be formed by patterning the edge 18BE of the light-emitting layer 18B on the flat upper surfaces of the second edge covers 22GB and 22BR. Therefore, it is easy to form the light-emitting layer 18B by patterning.

[0168] In the display device 2, the second edge covers 22RG, 22GB, and 22BG are used as partition walls, so that the light-emitting layers 18R, 18G, and 18B can be separately coated by the inkjet method.

[0169] 4 Third Embodiment

[0170] Hereinafter, the differences between the third embodiment and the first embodiment will be described. Regarding the points not described, the third embodiment also adopts the same configuration as that adopted in the first embodiment.

[0171] Fig.21 It is a cross-sectional view schematically illustrating each pixel P included in the display device 3 according to the third embodiment.

[0172] In the display device 3 , the light emitting layer 18B having a color different from the light emitting layers 18R and 18G is arranged over the upper sides of the pixel electrode 16B, the edge cover 21RG, the edge cover 21GB, and the edge cover 21BR.

[0173] The display device 3 can be manufactured by leaving a portion of the photoresist film 41B as the edge covers 21RG, 21GB, and 21BR. By manufacturing the display device 3 in this way, the light emitting layer 18B and the edge covers 21RG, 21GB, and 21BR can be formed simultaneously, and the process of manufacturing the display device 3 can be shortened.

[0174] In the display device 3, the light emitting material layer 44B is formed by evaporation, so that the thickness of the light emitting layer 18B can be made uniform. When the light emitting material layer 44B is formed by evaporation, a solution containing an organic compound is used as an evaporation source, and the light emitting material layer 44B can be formed by atomization deposition. When the light emitting material layer 44B is formed by atomization deposition, for example, a quantum dot solution is atomized to form a mist containing quantum dots, and the formed mist adheres to the surface to be formed to form a film containing quantum dots on the surface to be formed.

[0175] The present invention is not limited to the above-described embodiments, and may be replaced with a configuration that is substantially the same as the configuration shown in the above-described embodiments, a configuration that achieves the same function and effect, or a configuration that can achieve the same purpose.

Claims

1. A display device, characterized in that: include: substrate; a pixel electrode, arranged on the substrate, and having a first portion and a second portion arranged outside the first portion, wherein the first portion protrudes more on a second side than the second portion, and the second side is opposite to the first side close to the substrate; a light emitting layer configured to span across the second side of the first portion and the second side of the second portion; a first edge cover, configured to span across the second side of the edge portion of the first part and the second side of the second part, with an opening formed on the second side of the center portion of the first part, and covering the edge of the first part; as well as A counter electrode includes a portion disposed on the second side relative to the first edge cover, and the counter electrode faces the pixel electrode via the light emitting layer.

2. The display device according to claim 1, characterized in that Also includes: an interlayer insulating film having a contact hole formed therein, wherein the contact hole is arranged outside the second portion; a wiring having a portion disposed on the first side of the contact hole; as well as The connection conductor is arranged inside the contact hole to electrically connect the pixel electrode and the wiring to each other.

3. The display device according to claim 2, characterized in that: The interlayer insulating film includes a first film portion disposed on the first portion side of the first portion and a second film portion disposed on the first side of the second portion, The first membrane portion protrudes further toward the second side than the second membrane portion.

4. The display device according to any one of claims 1 to 3, characterized in that: The invention also includes a second edge cover, which is arranged on the first side of the edge of the light-emitting layer and covers the edge of the pixel electrode.

5. The display device according to any one of claims 1 to 4, characterized in that: It also includes an inorganic material structure, which is arranged on the first side of the pixel electrode, The inorganic material structure has a first height at the first side of the first portion, and has a second height lower than the first height at the first side of the second portion.

6. The display device according to claim 5, characterized in that: The inorganic material structure comprises: a first element disposed on the first side of the first portion; The second elements are disposed on the first side of the second portion, and the number of the second elements is less than the number of the first elements.

7. The display device according to claim 6, characterized in that: The first element includes at least one selected from the group consisting of a first switching element, a first capacitor, and a first wiring. The second element includes at least one selected from the group consisting of a second switching element, a second capacitor, and a second wiring.

8. The display device according to any one of claims 1 to 7, characterized in that: Also included is a functional layer disposed over the entire first side of the light emitting layer.

9. The display device according to claim 8, characterized in that: The functional layer includes at least one selected from the group consisting of a charge transport layer, a charge injection layer, and a charge blocking layer.

10. The display device according to any one of claims 1 to 9, characterized in that: Including two pixels adjacent to each other, The two adjacent pixels each include the light-emitting layer. In the two adjacent pixels, the two light-emitting layers included in each pixel are separated from each other.

11. The display device according to any one of claims 1 to 10, characterized in that: Including two pixels adjacent to each other, The two adjacent pixels each include the light-emitting layer. In the two adjacent pixels, edge portions of the two light-emitting layers included in each pixel overlap with each other.

12. The display device according to any one of claims 1 to 11, characterized in that: Another light emitting layer is further provided, which is disposed on the first edge cover and has a color different from that of the light emitting layer.

13. A method for manufacturing a display device, characterized in that: include: a) a process of preparing a substrate; b) forming a pixel electrode, the pixel electrode being disposed on the substrate and comprising a first portion and a second portion disposed outside the first portion, the first portion protruding further toward a second side than the second portion, the second side being opposite to the first side close to the substrate; c) forming a release layer on the outer side of the second portion; d) forming a light emitting material layer, wherein the light emitting material layer is formed across the second side of the first portion, the second side of the second portion, and the second side of the lift-off layer; e) forming a light-emitting layer by peeling off the peeling layer and a portion of the light-emitting material layer formed on the second side of the peeling layer, thereby forming the light-emitting layer arranged to span from the light-emitting material layer to the second side of the first portion and the second side of the second portion; as well as f) forming an edge cover that straddles the second side of the edge of the first portion and the second side of the second portion, has an opening formed on the second side of the center of the first portion, and covers the edge of the first portion.

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