A method for preparing gallium oxide with enhanced ultraviolet absorbance and gallium oxide material prepared by the method

Abstract

This application provides a method for preparing gallium oxide (GaO) with enhanced ultraviolet absorbance and a GaO material prepared according to this method. First, a GaO thin film capable of generating ultraviolet absorption is grown on a substrate by magnetron sputtering. The GaO thin film is then annealed. Next, a copper thin film is grown on the GaO thin film by magnetron sputtering, followed by rapid annealing, causing the copper film to crack into copper nanoparticles under heat. This preparation method utilizes copper nanoparticles to enhance the ultraviolet absorption performance of GaO. The process steps are simple and easy to operate, thus effectively reducing the preparation cost. Furthermore, the GaO material prepared by this method shows a significant improvement in ultraviolet absorbance.

Description

Technical Field

[0001] This application relates to the field of gallium oxide material technology, and in particular to a preparation method that can enhance the ultraviolet absorbance of gallium oxide and a gallium oxide material prepared according to the method. Background Technology

[0002] Since the beginning of the 21st century, information technology has developed rapidly, and traditional silicon-based ultraviolet detectors can no longer meet the requirements of modern technology. Gallium oxide (Ga2O3) is a novel wide-bandgap transparent conductive semiconductor material with a bandgap of 4.6–5.1 eV and an absorption cutoff edge of 240–270 nm, located in the solar-blind ultraviolet region (200–280 nm). Gallium oxide-based solar-blind ultraviolet detectors have broad application prospects in missile tracking, flame detection, ozone monitoring, lightning warning, and ultraviolet leakage detection. However, various problems still exist in the fabrication of gallium oxide ultraviolet detectors. Past methods using noble metals to enhance semiconductor photon absorption often involve complex fabrication processes and high costs, greatly limiting the widespread application of gallium oxide. Therefore, further exploration is needed to effectively improve the ultraviolet absorption performance of gallium oxide while simplifying processes and reducing costs. Summary of the Invention

[0003] In view of this, this application proposes a preparation method that can enhance the ultraviolet absorbance of gallium oxide and a gallium oxide material prepared according to the method, aiming to solve the technical problems existing in the prior art, such as complex preparation process, low ultraviolet absorption efficiency of intrinsic gallium oxide thin film, and high preparation cost.

[0004] On the one hand, this application provides a preparation method that can enhance the ultraviolet absorbance of gallium oxide, including the following steps:

[0005] S1: Prepare a substrate;

[0006] S2: Place the substrate into a magnetron sputtering growth chamber to grow a gallium oxide thin film;

[0007] S3: Place the gallium oxide film into an annealing furnace for annealing treatment;

[0008] S4: Place the annealed gallium oxide film into the magnetron sputtering growth chamber and grow a copper film on the outer surface of the gallium oxide film.

[0009] S5: The gallium oxide film on which the copper film has been grown is placed in an annealing furnace for annealing treatment, so that the copper film is cracked into copper nanoparticles.

[0010] In step S3, the annealing temperature is 700℃~1100℃ and the annealing time is 1h.

[0011] In one embodiment, in step S5, the annealing temperature is 350℃~650℃ and the annealing time is 450s~600s.

[0012] In one embodiment, in step S2, the gallium oxide thin film is subjected to a magnetron sputtering vacuum level below 3*10⁻⁶. -6 After Toor, growth begins. During the growth of the gallium oxide thin film:

[0013] The growth parameters of the gallium oxide thin film are: sputtering power of 100W, argon gas flow rate of 100SCCM, oxygen gas flow rate of 10SCCM, growth time of 3300s, and growth thickness of 100nm.

[0014] In one embodiment, in step S4, the copper thin film is subjected to a magnetron sputtering vacuum level lower than 3*10. -6 After Toor, growth begins. During the growth of the copper thin film:

[0015] The growth parameters of the copper thin film are: sputtering power of 100W, argon gas flow rate of 100SCCM, growth time of 20s to 80s, and growth thickness of 5nm to 40nm.

[0016] In one embodiment, in step S5, the copper film undergoes rapid annealing in a nitrogen atmosphere with a nitrogen flow rate of 10 SCCM.

[0017] In one embodiment, the copper nanoparticles have a particle size of 10 nm to 40 nm.

[0018] In one embodiment, the copper nanoparticles have an irregular spherical shape.

[0019] In one embodiment, the substrate is a sapphire substrate.

[0020] On the other hand, this application also provides a gallium oxide material, which is prepared according to the preparation method described above.

[0021] In summary, this application provides a method for preparing gallium oxide with enhanced ultraviolet absorbance and a gallium oxide material prepared according to this method. First, a gallium oxide thin film capable of generating ultraviolet absorption is grown on a substrate by magnetron sputtering. The gallium oxide thin film is then annealed. Next, a copper thin film is grown on the gallium oxide thin film by magnetron sputtering, followed by rapid annealing, causing the copper thin film to crack into copper nanoparticles under heat. This preparation method utilizes copper nanoparticles to enhance the ultraviolet absorption performance of gallium oxide. The process steps are simple and easy to operate, thus effectively reducing the preparation cost. Furthermore, the gallium oxide material prepared by this method shows a significant improvement in ultraviolet absorbance. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the process flow for the illustrative preparation method of this application.

[0023] Figure 2 This is a schematic cross-sectional view of the gallium oxide material prepared by the preparation method of this application.

[0024] Figure 3 This is a SEM image of the gallium oxide material prepared by the preparation method of this application.

[0025] Figure 4 This is a comparison curve of the absorbance of gallium oxide material with copper nanoparticles on its surface prepared by the preparation method of this application and gallium oxide material without copper nanoparticles on its surface. Detailed Implementation

[0026] The present application will be further described below with reference to specific embodiments and accompanying drawings, but the embodiments do not limit the present application in any way. The embodiments are implemented based on the technical solution of the present application, and provide detailed implementation methods and specific operation processes, but the protection scope of the present application is not limited to the following embodiments.

[0027] Please also refer to Figures 1 to 4 As shown, this application provides a method for preparing gallium oxide with enhanced ultraviolet absorbance and a gallium oxide material prepared according to the method. The preparation method includes the following steps:

[0028] S1: Prepare a substrate 10;

[0029] S2: Place the substrate 10 into the magnetron sputtering growth chamber to grow a gallium oxide thin film 12;

[0030] S3: Place the gallium oxide thin film 12 into an annealing furnace for annealing treatment;

[0031] S4: Place the annealed gallium oxide thin film 12 into the magnetron sputtering growth chamber and grow a copper thin film on the outer surface of the gallium oxide thin film 12.

[0032] S5: The gallium oxide thin film 12 with copper film grown on it is placed in an annealing furnace for annealing treatment, so that the copper film is cracked into copper nanoparticles 14.

[0033] The substrate 10 can be a sapphire substrate. In other embodiments, the substrate 10 can also be other suitable substrates. The gallium oxide thin film 12 grown on the substrate 10 can generate ultraviolet absorption, and the copper thin film grown on the gallium oxide thin film 12 is used for subsequent preparation of copper nanoparticles 14.

[0034] like Figure 1 and Figure 3As shown, the copper nanoparticles 14 have an irregular spherical morphology. Particle size testing revealed that the particle size of the copper nanoparticles 14 is 10 nm to 40 nm, preferably 30 nm to 40 nm.

[0035] Furthermore, step S1 also includes cleaning and drying the substrate 10. Specifically, the substrate 10 is ultrasonically cleaned with acetone, ethanol and deionized water for 10 minutes in sequence, then dried with nitrogen, then cleaned in a solution of phosphoric acid:sulfuric acid = 3:1 for 10 minutes, and finally cleaned with deionized water and dried with nitrogen.

[0036] Preferably, in step S2, the gallium oxide thin film 12 is subjected to a magnetron sputtering vacuum level below 3*10⁻⁶. -6 After Toor, growth begins. During the growth of gallium oxide film 12:

[0037] The growth parameters of the gallium oxide thin film 12 are as follows: sputtering power of 100W, argon gas flow rate of 100SCCM, oxygen gas flow rate of 10SCCM, growth time of 3300s, and growth thickness of 100nm.

[0038] Preferably, in step S3, the annealing temperature is 700℃~1100℃, more preferably 900℃, and the annealing time is 1h.

[0039] Preferably, in step S4, the copper thin film is subjected to a magnetron sputtering vacuum level below 3*10. -6 Growth begins after Toor, during the growth process of the copper thin film:

[0040] The growth parameters for the copper thin film are as follows: sputtering power of 100W, argon gas flow rate of 100SCCM, growth time of 20s to 80s, preferably 40s, and growth thickness of 5nm to 40nm, preferably 20nm.

[0041] Preferably, after the copper thin film is prepared, a rapid annealing treatment is required. Specifically, in step S5, the copper thin film is rapidly annealed in a nitrogen atmosphere, with a nitrogen flow rate of 10 SCCM, an annealing temperature of 350℃~650℃, preferably 400℃, and an annealing time of 450s~600s, preferably 600s.

[0042] In the illustrated embodiment, the preparation method for enhancing the ultraviolet absorbance of gallium oxide includes the following steps:

[0043] Prepare a sapphire substrate 10 and clean and dry it. Specifically, use acetone, ethanol and deionized water to ultrasonically clean for 10 minutes, then dry with nitrogen, then clean in a solution of phosphoric acid: sulfuric acid = 3:1 for 10 minutes, and finally clean with deionized water and blow dry with nitrogen.

[0044] The cleaned and dried substrate 10 is placed into the magnetron sputtering growth chamber, and the vacuum level in the growth chamber is waited until it reaches 3*10. - 6 After torsion, the sputtering power was adjusted to 100W, the argon gas flow rate to 100SCCM, the oxygen gas flow rate to 10SCCM, the time to 3300s, and the thickness to 100nm. The magnetron sputtering operation was then started to grow a gallium oxide thin film 12 capable of generating ultraviolet absorption on the substrate 10.

[0045] The substrate 10 with the grown gallium oxide thin film 12 is placed in an annealing furnace for annealing at 900°C for 1 hour.

[0046] The annealed gallium oxide thin film 12 and substrate 10 are placed back into the magnetron sputtering growth chamber, and the vacuum level in the growth chamber is brought to 3*10. -6 After torsion, the sputtering power was adjusted to 100W, the argon gas flow rate to 100SCCM, the time to 40s, and the thickness to 20nm. The magnetron sputtering operation was then started to grow a copper film on the gallium oxide film 12. The copper film is used to prepare copper nanoparticles 14 in the subsequent process.

[0047] The grown copper thin film, gallium oxide thin film 12 and substrate 10 are placed in an annealing furnace. Nitrogen gas is introduced into the annealing furnace and the nitrogen gas flow rate is set to 10 SCCM. The annealing temperature is 400℃ and the annealing time is 600s. This causes the copper thin film on the surface of the gallium oxide thin film 12 to split into irregular spherical copper nanoparticles 14 with a particle size of 30nm to 40nm.

[0048] like Figure 3 As shown in the SEM image, the copper nanoparticles 14 on the surface of the gallium oxide film 12 are irregularly spherical. Figure 4 As shown, the ultraviolet absorbance of gallium oxide material A with copper nanoparticles on its surface prepared by the above-described preparation method of this application is significantly higher than that of gallium oxide material B without copper nanoparticles on its surface. This indicates that the preparation method of this application can significantly enhance the ultraviolet absorbance of gallium oxide, and devices made using the gallium oxide material of this application, such as ultraviolet detectors, have the advantage of high ultraviolet absorption efficiency.

[0049] In summary, this application provides a method for preparing gallium oxide with enhanced ultraviolet absorbance and a gallium oxide material prepared according to this method. First, a gallium oxide thin film capable of generating ultraviolet absorption is grown on a substrate by magnetron sputtering. The gallium oxide thin film is then annealed. Next, a copper thin film is grown on the gallium oxide thin film by magnetron sputtering, followed by rapid annealing, causing the copper thin film to crack into copper nanoparticles under heat. This preparation method utilizes copper nanoparticles to enhance the ultraviolet absorption performance of gallium oxide. The process steps are simple and easy to operate, thus effectively reducing the preparation cost. Furthermore, the gallium oxide material prepared by this method shows a significant improvement in ultraviolet absorbance.

[0050] The concepts described in this application may be implemented in other forms without departing from their spirit and characteristics. The specific embodiments disclosed should be considered illustrative rather than restrictive. Therefore, the scope of this application is determined by the appended claims, and not by the preceding description. Any modifications within the literal meaning and equivalent scope of the claims should fall within the scope of those claims.

Claims

1. A method for preparing gallium oxide with enhanced ultraviolet absorbance, characterized in that, Includes the following steps: S1: Prepare a substrate, wherein the substrate is a sapphire substrate; S2: Place the substrate into a magnetron sputtering growth chamber to grow a gallium oxide thin film; S3: Place the gallium oxide film into an annealing furnace for annealing treatment; S4: Place the annealed gallium oxide film into a magnetron sputtering growth chamber and grow a copper film on the outer surface of the gallium oxide film. S5: The gallium oxide film on which the copper film is grown is placed in an annealing furnace for annealing treatment, so that the copper film is cracked into copper nanoparticles, and the copper nanoparticles are irregular spherical in shape.

2. The preparation method for enhancing the ultraviolet absorbance of gallium oxide as described in claim 1, characterized in that, In step S3, the annealing temperature is 700℃~1100℃ and the annealing time is 1h.

3. The preparation method for enhancing the ultraviolet absorbance of gallium oxide as described in claim 1, characterized in that, In step S5, the annealing temperature is 350℃~650℃ and the annealing time is 450s~600s.

4. The preparation method for enhancing the ultraviolet absorbance of gallium oxide as described in claim 1, characterized in that, In step S2, the gallium oxide thin film is subjected to a magnetron sputtering vacuum level below 3*10. -6 After Torr, growth begins during the growth of the gallium oxide film: The growth parameters of the gallium oxide thin film are: sputtering power of 100W, argon gas flow rate of 100sccm, oxygen gas flow rate of 10sccm, growth time of 3300s, and growth thickness of 100nm.

5. The preparation method for enhancing the ultraviolet absorbance of gallium oxide as described in claim 1, characterized in that, In step S4, the copper thin film is subjected to a magnetron sputtering vacuum level below 3*10. -6 After Torr, growth begins during the growth of the copper thin film: The growth parameters of the copper thin film are: sputtering power of 100W, argon gas flow rate of 100sccm, growth time of 20s~80s, and growth thickness of 5nm~40nm.

6. The preparation method for enhancing the ultraviolet absorbance of gallium oxide as described in claim 1, characterized in that, In step S5, the copper film is rapidly annealed in a nitrogen atmosphere with a nitrogen flow rate of 10 sccm.

7. The preparation method for enhancing the ultraviolet absorbance of gallium oxide as described in claim 1, characterized in that, The copper nanoparticles have a particle size of 10 nm to 40 nm.

8. A gallium oxide material, characterized in that, Prepared by the method according to any one of claims 1-7.

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