An antenna structure based on a metasurface integrated with radiation scattering

Abstract

The application discloses a kind of based on super surface's radiation scattering integrated antenna structure, including the basic structure unit of two layers of dielectric layer and three layers of metal layer, dielectric layer is by first dielectric layer and second dielectric layer from top to bottom distribution;Metal layer is from top to bottom respectively the super surface scattering and radiation layer of first metal layer, the copper column layer and direct current bias layer of second metal layer, the metal ground layer of third metal layer;The super surface scattering and radiation layer has scattering function and radiation function, copper column layer and direct current bias layer provide voltage difference and excitation for super surface;Metal ground layer is as the floor layer of entire antenna;Super surface is by n×n basic structure unit copy translation composition.The application can let RCS under the irradiation of different incident waves realize the effect of reduction.The radiation and scattering characteristics of the proposed digital metasurface array are independent of each other and can be flexibly controlled respectively.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of antenna structure, and particularly relates to an antenna structure based on radiation and scattering integration of metasurface. BACKGROUND

[0002] The reduction of antenna radar cross section (RCS) has attracted widespread attention from countries around the world. In order to achieve this goal, various types of metasurface structures have been designed in recent years, such as polarization rotation metasurfaces, wave-absorbing metasurfaces, etc., and their performance in RCS reduction has been verified by experiments. In recent years, the concept of digital metasurface has been proposed. Digital metasurfaces can flexibly realize the control of metasurface functions by digitizing variables such as cell amplitude, phase, etc., and by controlling the devices on them, such as PIN diodes, varactor diodes, etc. At present, various RCS reduction structures and antenna structures based on digital metasurfaces are emerging in an endless stream. However, how to use digital metasurfaces to realize the design of radiation and scattering integration is still rarely reported, especially for the design of wide-angle radiation and scattering integration.

[0003] With the rapid development of electronic reconnaissance, radar detection and other technologies, the demand for concealment, stealth and reinforcement protection is urgent, so the high-performance electromagnetic stealth technology becomes particularly important. In recent years, the concept of digitally coded metasurface has been proposed to efficiently design metasurface structures with controllable performance. For example, a 1-bit digital metasurface is composed of two types of digitally quantized metasurface units, namely 0-bit units and 1-bit units. These two types of units have two working states, and the working states of the two types of units on the digital metasurface are digitally controlled by using the hardware of field programmable gate array (FPGA), so that the control of scattered waves or radiated waves can be flexibly realized. However, there is no report on the realization of the integration of radiation and scattering control by using digital metasurfaces, especially for incident waves with different incident angles, while ensuring the radiation characteristics and dynamically reducing the RCS.

[0004] Existing technical solutions include: for example, Huanhuan Yang et al. published a paper titled "A1-Bit 10×10 Reconfigurable Reflectarray Antenna: Design, Optimization, and Experiment" in the journal IEEE Transactions on Antenna and Propagation. This paper achieved wide-angle scanning of the radiated beam through a 1-bit digital metasurface design, but this structure does not possess the characteristic of RCS reduction. Another example is Liu Ying et al.'s paper titled "Low RCS Antenna Array With Reconfigurable Scattering Patterns Based on Digital Antenna Units" published in the same journal. This paper arrays antenna units loaded with PIN diodes and, by adjusting the on / off state of the PIN diodes in different antenna units, achieves RCS reduction at different incident angles while maintaining radiation characteristics. However, this structure only demonstrates radiation characteristics in the side-firing direction and does not exhibit the characteristic of scanning the radiated beam.

[0005] In recent years, with the rapid development of the concept of metasurfaces, especially the proposal of digital metasurface design theory, various structures based on digital metasurfaces have been designed. However, in existing digital metasurface design technologies, most digital metasurfaces control tunable devices to modulate scattered waves and achieve low RCS characteristics, or manipulate radiated waves to achieve beam scanning characteristics. However, achieving integrated control of both radiated and scattered beams simultaneously presents certain challenges. Exploring designs where scattering and radiating performance can be independently controlled without interference is therefore essential. Summary of the Invention

[0006] To overcome the problems existing in the prior art, the present invention aims to provide an antenna structure based on a metasurface that integrates radiation and scattering, thereby achieving beam-scanning radiation characteristics and low RCS scattering characteristics of the antenna array. By controlling the PIN diodes loaded on the digital metasurface to dynamically adjust the scattering state of the digital metasurface units, the antenna array can reduce the RCS under different incident wave illuminations while maintaining good radiation characteristics. The radiation and scattering characteristics of the proposed digital metasurface array are independent and can be flexibly controlled separately.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0008] An antenna structure based on the integration of a metasurface radiation scatter, the metasurface is composed of n×n basic structure units copied and translated, each of the basic structure units includes a dielectric layer and a metal layer;

[0009] The dielectric layer includes a first dielectric layer 1 on the top and a second dielectric layer 2 on the bottom;

[0010] The metal layer includes a metasurface scattering and radiation layer 3 on the top surface of the first dielectric layer 1, a copper column layer 4 and a direct current bias layer 5 on the first dielectric layer 1, and a metal ground layer 6 on the bottom surface of the second dielectric layer 2;

[0011] The metasurface scattering and radiation layer 3 has scattering and radiation functions, the copper column layer 4 and the direct current bias layer 5 provide voltage difference and excitation for the metasurface, and the metal ground layer 6 serves as the floor layer of the entire antenna.

[0012] The metasurface scattering and radiation layer 3 is divided into two parts, one part is a metasurface scattering part 3_1, and the other part is a metasurface radiation part 3_2, both of which are located on the top surface of the first dielectric layer 1;

[0013] The metasurface scattering part 3_1 has metasurface structures in the x direction and the y direction of the metasurface, and the metasurface scattering parts 3_1 in the two directions are rotated by 90° along the center of the first dielectric layer 1, the metasurface structure is a H-shaped metal strip with two embedded PIN diodes, which is used to realize the regulation of x-polarized incident wave and y-polarized incident wave; the metasurface radiation part 3_2 is used for radiation of the antenna. The metasurface radiation part 3_2 is a square structure, the length and width of the side length are parallel to the outer edge of the first dielectric layer 1, and the metasurface scattering parts 3_1 in the two directions are symmetrically arranged on the diagonal line of the metasurface radiation part 3_2.

[0014] The copper column layer 4 includes five copper columns, which are composed of copper column one 14, copper column two 15, copper column three 16, copper column four 17 and copper column five 18, wherein the copper column one 14 and the copper column two 15 pass through the first dielectric layer 1, and the copper column three 16, the copper column four 17 and the copper column five 18 pass through the first dielectric layer 1 and the second dielectric layer 2 at the same time.

[0015] The direct current bias layer 5 is located on the top surface of the second dielectric layer 2, and the metal ground layer 6 is located on the bottom surface of the second dielectric layer 2.

[0016] The thickness h1 of the first dielectric layer 1 ranges from 2.95 to 3.05 mm, the thickness h2 of the second dielectric layer 2 ranges from 0.1 to 0.25 mm, and the total thickness ranges from 3.05 to 3.3 mm when combined together, and the material of the dielectric substrate 1 is TP-2 material with a relative dielectric constant of ε r = 10.2, and the material of the dielectric substrate 2 is TP-2 material with a relative dielectric constant of εr = 4.4 FR4 material, copper column layer 4 and DC bias layer 5 between the first dielectric layer 1 and the second dielectric layer 2.

[0017] The metasurface scattering part 3_1 is composed of metasurface structure 7 and metasurface structure 8, wherein metasurface structure 7 is obtained by counterclockwise rotation of metasurface structure 8, and x-polarized incident wave and y-polarized incident wave are controlled respectively.

[0018] Wherein the metasurface structure 7 is composed of strip metal patch one 9, strip metal patch two 10, PIN diode patch 11 and connecting line 12;

[0019] The strip metal patch one 9 is located outside the metasurface unit, the strip metal patch two 10 is located inside the metasurface unit, and the connecting line 12 is arranged at the corresponding position between the strip metal patch one 9 and the strip metal patch two 10, and the PIN diode patch 11 is arranged between the two connecting lines 12;

[0020] The length L1 of the strip metal patch one 9 ranges from 6.75mm to 6.85mm, and the width w1 ranges from 1.45mm to 1.55mm, the length L3 of the strip metal patch two 10 ranges from 5.55mm to 5.65mm, and the width w3 ranges from 2.85mm to 2.95mm; the connecting line 12 is symmetrical at both ends of the PIN diode patch 11, the length w4 ranges from 0.25mm to 0.35mm, and the width w2 ranges from 0.45mm to 0.55mm.

[0021] The length L2 of the PIN diode patch 11 ranges from 0.45mm to 0.55mm, and the width w2 ranges from 0.45mm to 0.55mm.

[0022] The selected model of PIN diode is SMP1340-040LF, and the properties of PIN diode are that when the PIN diode is on, it shows a resistance of 1 ohm and a capacitance of 0.45nH in series, and when the PIN diode is off, it shows a resistance of 10 ohm, a capacitance of 0.45nH and a capacitance of 0.16pF in series.

[0023] The distance d1 of the strip metal patch one 9 to the edge of the metasurface unit ranges from 0.15mm to 0.25mm, the distance d2 between the strip metal patch one 9 and the strip metal patch two 10 ranges from 1.05mm to 1.15mm, and the distance d3 between the strip metal patch two 10 and the metasurface radiation part 3_2 ranges from 2.3mm to 2.4mm.

[0024] The metasurface radiation part 3_2 is a square metal patch 13, and the side length L4 ranges from 8.5mm to 8.6mm.

[0025] The copper column one 14 is obtained by rotating 90° clockwise to get copper column two 15, the copper column one 14 and the copper column two 15 are connected with the strip-shaped metal patch one 9 above and the direct current bias metal patch one 19 below; the copper column three 16 is obtained by rotating 90° clockwise to get copper column four 17, the copper column three 16 and the copper column four 17 are connected with the strip-shaped metal patch two 10 above and the metal ground layer 6 below; the copper column five 18 is located at the lower right corner of the metasurface, connected with the metasurface radiation part 3_2 above and the antenna excitation source below to provide excitation for the metasurface.

[0026] The radius r1 of the copper column one 14 and the copper column two 15 ranges from 0.2 to 0.3 mm, the height h3 ranges from 2.95 to 3.05 mm, the distance d4 from the edge of the metasurface unit ranges from 0.8 to 0.9 mm, and d5 ranges from 9.9 to 10.1 mm; the radius r2 of the copper column three 16 and the copper column four 17 ranges from 0.2 to 0.3 mm, the height h4 ranges from 3.05 to 3.3 mm, the distance d6 from the edge of the metasurface unit ranges from 15.8 to 15.9 mm, and d7 ranges from 9.9 to 10.1 mm; the radius r3 of the copper column five 18 ranges from 0.3 to 0.4 mm, the height h5 ranges from 3.05 to 3.3 mm, the distance d8 from the edge of the metasurface unit ranges from 4.45 to 4.55 mm, and d9 ranges from 4.45 to 4.55 mm.

[0027] The direct current bias layer 5 is composed of the direct current bias metal patch one 19, the direct current bias metal patch two 20, the via one 23, the via two 24 and the via three 25; the direct current bias metal patch one 19 is obtained by rotating 90° counterclockwise to get the direct current bias metal patch two 20, the direct current bias metal patch one 19 is composed of the fan-shaped metal patch 21 and the rectangular metal patch 22; the rectangular metal patch 22 is located on the outer side, and the fan-shaped metal patch 21 is located on the inner side; the via one 23 is arranged along the vertical center line of the direct current bias metal patch one 19;

[0028] The via two 24 is arranged along the horizontal center line of the direct current bias metal patch two 20;

[0029] The distance d10 from the edge of the metasurface unit of the direct current bias metal patch one 19 ranges from 0 to 0.1 mm; wherein, the angle θ of the fan-shaped metal patch 21 ranges from 100° to 140°, the radius r6 ranges from 2 to 2.1 mm, the length L5 of the rectangular metal patch 22 ranges from 0.95 to 1.05 mm, and the width w5 ranges from 0.45 to 0.55 mm.

[0030] The via hole one 23 is obtained by rotating 90 degrees counterclockwise, the copper column three 16 passes through the via hole two 24, the copper column four 17 passes through the via hole one 23, the radius r4 ranges from 0.2 to 0.3 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column. The copper column five 18 passes through the via hole three 25, the radius r5 ranges from 0.3 to 0.4 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column.

[0031] The metal ground layer 6 is a metal patch, the side length L6 ranges from 19.9 to 20.1 mm, is connected with the copper column three 16 and the copper column four 17, and a via hole four 26 is opened on the metal patch, so that the copper column five 18 passes through the via hole. The radius r7 of the via hole four 26 ranges from 0.45 to 0.55 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column.

[0032] The metasurface is composed of 16*16 basic structure units by copy translation, and the copy translation period p is 20 mm.

[0033] The beneficial effects of the present application are:

[0034] The digital metasurface unit has two scattering states controlled by a PIN diode. For the illumination of the incident wave, the scattering state of the digital metasurface unit is controlled by using the PIN diode, and the regulation effect on the x-polarized incident wave and the y-polarized incident wave can be achieved, and the digital metasurface unit has a dual polarization function. The scattering pattern of the digital metasurface can be adjusted with the direction of the incoming wave, thereby realizing the RCS reduction performance of a large angle. Under the radiation condition, the working state of the PIN diode has little effect on the radiation performance of the antenna array. Therefore, the radiation performance of the antenna array is not affected by the scattering performance. The radiation and scattering performance are independently controllable. Therefore, by designing the digital metasurface, the antenna can work normally, and the purpose of stealth is achieved. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 It is a three-dimensional schematic view of the basic unit structure of the metasurface of the present application embodiment 1.

[0036] Figure 2 It is a size structure explanatory view of the basic unit structure of the metasurface of the present application embodiment 1.

[0037] Figure 3 It is a top view of the metasurface and the radiation antenna layer in the basic unit structure of the metasurface of the present application embodiment 1.

[0038] Figure 4 It is a top view of the copper column in the direct current bias layer in the basic unit structure of the metasurface of the present application embodiment 1.

[0039] Figure 5Top view of the metal patch and via in the DC bias layer in the basic unit structure of the metasurface in Embodiment 1 of the present application.

[0040] Figure 6 Top view of the GND layer in the basic unit structure of the metasurface in Embodiment 1 of the present application.

[0041] Figure 7 The metasurface in Embodiment 1 of the present application is composed of 16x16 basic units which are arranged periodically in an array.

[0042] Figure 8 S parameter simulation results of the basic unit of the metasurface in Embodiment 1 of the present application under x-polarized incident wave.

[0043] Figure 9 S parameter simulation results of the basic unit of the metasurface in Embodiment 1 of the present application under y-polarized incident wave.

[0044] Figure 10 Reflection phase simulation results of the basic unit of the metasurface in Embodiment 1 of the present application under x-polarized incident wave.

[0045] Figure 11 Reflection phase simulation results of the basic unit of the metasurface in Embodiment 1 of the present application under y-polarized incident wave.

[0046] Figure 12 RCS reduction simulation results of the metasurface in Embodiment 1 of the present application and comparison with the RCS reduction simulation results of the same-area ground plane.

[0047] Figure 13 Radiation gain results of the antenna array of the metasurface in Embodiment 1 of the present application. DETAILED DESCRIPTION

[0048] The present application will be further described in detail below with reference to the accompanying drawings.

[0049] The selection of the dielectric substrate material is not necessarily TP-2 and FR4, as long as the relative dielectric constant meets the resonance requirements. According to the required frequency band, bandwidth, etc., the corresponding size parameters of the unit can be adjusted to meet the resonance requirements. According to the required gain, reflection phase requirements, the electrical properties of the PIN diode, etc. can be adjusted to meet the resonance requirements.

[0050] Embodiment 1

[0051] Reference Figure 1The application discloses a radiation scattering integrated structure based on a digital metasurface, which comprises a basic structural unit of two dielectric layers and three metal layers, wherein the dielectric layers are composed of a first dielectric layer 1 and a second dielectric layer 2 distributed from top to bottom; the metal layers are composed of a metasurface scattering and radiation layer 3 of a first metal layer, a copper column layer 4 and a direct current bias layer 5 of a second metal layer, and a metal ground layer 6 of a third metal layer from top to bottom, wherein the metasurface scattering and radiation layer 3 is divided into a metasurface scattering part 3_1 and a metasurface radiation part 3_2, and the two parts are located on the upper surface of the first dielectric layer 1. The copper column layer 4 comprises five copper columns, two of which pass through the first dielectric layer 1, and three of which pass through the first dielectric layer 1 and the second dielectric layer 2 at the same time, and the direct current bias layer 5 is located on the upper surface of the second dielectric layer 2. The metal ground layer 6 is located on the lower surface of the second dielectric layer 2. The metasurface scattering and radiation layer 3, the copper column layer 4, the direct current bias layer 5 and the metal ground layer 6 can be summarized. The metasurface scattering and radiation layer 3 has scattering and radiation functions, the metasurface scattering part 3_1 has metasurface structures in the x direction and the y direction of the metasurface, is a double-embedded PIN diode I-shaped metal strip and is used for realizing control on x-polarized incident waves and y-polarized incident waves, and the metasurface radiation part 3_2 can radiate an antenna. The copper column layer 4 and the direct current bias layer 5 provide a voltage difference and excitation for the metasurface. The metal ground layer 6 serves as a floor layer of the whole antenna.

[0052] Referring to Figure 2 , the thickness h1 of the first dielectric layer 1 is 3 mm, the thickness h2 of the second dielectric layer 2 is 0.25 mm, and the total thickness of the two together is 3.25 mm, the material of the dielectric substrate 1 is TP-2 material with a relative dielectric constant ε r = 10.2, the material of the dielectric substrate 2 is FR4 material with a relative dielectric constant ε r = 4.4, and the first dielectric layer 1 and the second dielectric layer 2 have the copper column layer 4 and the direct current bias layer 5 therebetween.

[0053] Referring to Figure 3 , the metasurface scattering and radiation layer 3 is a combination of the metasurface scattering part 3_1 and the metasurface radiation part 3_2, wherein the metasurface scattering part 3_1 is a symmetrical structure and is composed of a metasurface structure 7 and a metasurface structure 8, wherein the metasurface structure 7 is obtained by counterclockwise rotation of the metasurface structure 8. The x-polarized incident waves and the y-polarized incident waves are controlled respectively.

[0054] The metasurface structure 7 is composed of strip metal patch one 9, strip metal patch two 10, PIN diode patch 11 and connection line 12. The strip metal patch one 9 and the strip metal patch two 10 are connected with the PIN diode patch 11 through the connection line 12. The length L1 of the strip metal patch one 9 is 6.8mm, and the width w1 is 1.5mm. The length L3 of the strip metal patch two 10 is 5.6mm, and the width w3 is 2.9mm. The connection line 12 is symmetrical at both ends of the PIN diode patch 11, the length w4 is 0.3mm, and the width w2 is 0.5mm. The distance d1 from the strip metal patch one 9 to the edge of the metasurface unit is 0.2mm, the distance d2 between the strip metal patch one 9 and the strip metal patch two 10 is 1.1mm, and the distance d3 from the strip metal patch two 10 to the metasurface radiation part 3_2 is 2.34mm.

[0055] The length L2 of the PIN diode patch 11 is 0.5mm, and the width w2 is 0.5mm. The type of the PIN diode is SMP1340-040LF, and the PIN diode has the following properties: when the PIN diode is open, it has a resistance of 1 ohm and a capacitance of 0.45nH in series; when the PIN diode is closed, it has a resistance of 10 ohm, a capacitance of 0.45nH and a capacitance of 0.16pF in series.

[0056] The metasurface radiation part 3_2 is a square metal patch 13 with a side length L4 of 8.6mm.

[0057] Referring to Figure 4 The copper column layer 4 is composed of copper column one 14, copper column two 15, copper column three 16, copper column four 17 and copper column five 18. The copper column one 14 is rotated 90° clockwise to obtain the copper column two 15. The copper column one 14 and the copper column two 15 are connected with the strip metal patch one 9 above and the direct current bias metal patch one 19 below. The copper column three 16 is rotated 90° clockwise to obtain the copper column four 17. The copper column three 16 and the copper column four 17 are connected with the strip metal patch two 10 above and the metal ground layer 6 below. The copper column five 18 is located at the lower right corner of the metasurface, connected with the metasurface radiation part 3_2 above and the antenna excitation source below to provide excitation for the metasurface. The radius r1 of the copper column one 14 and the copper column two 15 is 0.25mm, the height h3 is 3mm, the distance d4 from the edge of the metasurface unit is 0.85mm, and d5 is 10mm. The radius r2 of the copper column three 16 and the copper column four 17 is 0.25mm, the height h4 is 3.25mm, the distance d6 from the edge of the metasurface unit is 15.85mm, and d7 is 10mm. The radius r3 of the copper column five 18 is 0.32mm, the height h5 is 3.25mm, the distance d8 from the edge of the metasurface unit is 4.5mm, and d9 is 4.5mm.

[0058] Referring to Figure 5The direct current bias layer 5 is composed of direct current bias metal patch one 19, direct current bias metal patch two 20, via one 23, via two 24 and via three 25. The direct current bias metal patch one 19 is rotated counterclockwise by 90° to obtain the direct current bias metal patch two 20, and the direct current bias metal patch one 19 is composed of a fan-shaped metal patch 21 and a rectangular metal patch 22. The distance d10 from the direct current bias metal patch one 19 to the edge of the metasurface unit is 0.1 mm. Among them, the angle θ of the fan-shaped metal patch 21 is 120°, the radius r6 is 2 mm, the length L5 of the rectangular metal patch 22 is 1 mm, and the width w5 is 0.5 mm.

[0059] The via one 23 is rotated counterclockwise by 90° to obtain the via two 24, and the copper column three 16 passes through the via two 24, and the copper column four 17 passes through the via one 23, the radius r4 is 0.25 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column. The copper column five 18 passes through the via three 25, the radius r5 is 0.32 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column.

[0060] Referring to Figure 6 The metal ground layer 6 is a metal patch with a side length L6 of 20 mm, connecting the copper column three 16 and the copper column four 17, and having a via four 26 formed thereon, so that the copper column five 18 passes through the via, and the radius r7 of the via is 0.5 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column.

[0061] Referring to Figure 7 The metasurface is composed of 16×16 basic structural units copied and translated, and the copied and translated period p is 20 mm.

[0062] The parameters used in this embodiment are shown in Table 1.

[0063] Table 1 Parameter list in Example 1

[0064] L1 L2 L3 L4 L5 L6 h1 h2 6.8 mm 0.5 mm 5.6 mm 8.6 mm 1 mm 20 mm 3 mm 0.25 mm h3 h4 h5 w1 w2 w3 w4 w5 3 mm 3.25 mm 3.25 mm 1.5 mm 0.5 mm 2.9 mm 0.3 mm 0.5 mm r1 r2 r3 r4 r5 r6 r7 d1 0.25 mm 0.25 mm 0.32 mm 0.25 mm 0.32 mm 2 mm 0.5 mm 0.2 mm d2 d3 d4 d5 d6 d7 d8 d9 1.1 mm 2.34 mm 0.85 mm 10 mm 15.85 mm 10 mm 4.5 mm 4.5 mm d10 p θ 0.1 mm 20 mm 120°

[0065] Example 2

[0066] Referring to Figure 1The application discloses a radiation scattering integrated structure based on a digital metasurface, which comprises a basic structural unit of two dielectric layers and three metal layers, characterized in that the dielectric layers are composed of a first dielectric layer 1 and a second dielectric layer 2 distributed from top to bottom; the metal layers are composed of a metasurface scattering and radiation layer 3 of the first metal layer, a copper column layer 4 and a direct current bias layer 5 of the second metal layer, and a metal ground layer 6 of the third metal layer from top to bottom, wherein the metasurface scattering and radiation layer 3 is divided into a metasurface scattering part 3_1 and a metasurface radiation part 3_2, and the two parts are located on the upper surface of the first dielectric layer 1. The copper column layer 4 comprises five copper columns, two of which pass through the first dielectric layer 1, and three of which pass through the first dielectric layer 1 and the second dielectric layer 2 at the same time, and the direct current bias layer 5 is located on the upper surface of the second dielectric layer 2. The metal ground layer 6 is located on the lower surface of the second dielectric layer 2. The metasurface scattering and radiation layer 3, the copper column layer 4, the direct current bias layer 5 and the metal ground layer 6 can be summarized. The metasurface scattering and radiation layer 3 has scattering and radiation functions, the metasurface scattering part 3_1 has metasurface structures in the x direction and the y direction of the metasurface, is a double-embedded PIN diode I-shaped metal strip and is used for realizing control on x-polarized incident waves and y-polarized incident waves, and the metasurface radiation part 3_2 can radiate an antenna. The copper column layer 4 and the direct current bias layer 5 provide a voltage difference and excitation for the metasurface. The metal ground layer 6 serves as a floor layer of the whole antenna.

[0067] Referring to Figure 2 , the thickness h1 of the first dielectric layer 1 is 3 mm, the thickness h2 of the second dielectric layer 2 is 0.1 mm, and the total thickness of the two is 3.1 mm, the material of the dielectric substrate 1 is TP-2 material with a relative dielectric constant ε r = 10.2, the material of the dielectric substrate 2 is FR4 material with a relative dielectric constant ε r = 4.4, and the first dielectric layer 1 and the second dielectric layer 2 have the copper column layer 4 and the direct current bias layer 5 therebetween.

[0068] Referring to Figure 3 , the metasurface scattering and radiation layer 3 is a combination of the metasurface scattering part 3_1 and the metasurface radiation part 3_2, wherein the metasurface scattering part 3_1 is a symmetrical structure and is composed of a metasurface structure 7 and a metasurface structure 8, wherein the metasurface structure 7 is obtained by counterclockwise rotation of the metasurface structure 8, and the x-polarized incident wave and the y-polarized incident wave are controlled respectively.

[0069] The super surface structure 7 is composed of strip-shaped metal patch one 9, strip-shaped metal patch two 10, PIN diode patch 11 and connecting line 12. The strip-shaped metal patch one 9 and the strip-shaped metal patch two 10 are connected with the PIN diode patch 11 through the connecting line 12. The length L1 of the strip-shaped metal patch one 9 is 6.85 mm, and the width w1 is 1.55 mm. The length L3 of the strip-shaped metal patch two 10 is 5.65 mm, and the width w3 is 2.95 mm. The connecting line 12 is symmetrical at both ends of the PIN diode patch 11, the length w4 is 0.3 mm, and the width w2 is 0.5 mm. The distance d1 from the strip-shaped metal patch one 9 to the edge of the super surface unit is 0.2 mm, the distance d2 between the strip-shaped metal patch one 9 and the strip-shaped metal patch two 10 is 1.1 mm, and the distance d3 from the strip-shaped metal patch two 10 to the super surface radiation part 3_2 is 2.34 mm.

[0070] The length L2 of the PIN diode patch 11 is 0.5 mm, and the width w2 is 0.5 mm. The type of the PIN diode selected is SMP1340-040LF, and the attributes of the PIN diode are that when the PIN diode is open, it shows a resistance of 1 ohm and a capacitance of 0.45 nH in series, and when the PIN diode is closed, it shows a resistance of 10 ohm, a capacitance of 0.45 nH and a capacitance of 0.16 pF in series.

[0071] The super surface radiation part 3_2 is a square metal patch 13 with a side length L4 of 8.6 mm.

[0072] Referring to Figure 4 The copper column layer 4 is composed of copper column one 14, copper column two 15, copper column three 16, copper column four 17 and copper column five 18. The copper column one 14 is obtained by rotating 90° clockwise to obtain the copper column two 15. The copper column one 14 and the copper column two 15 are connected with the strip-shaped metal patch one 9 above and the direct current bias metal patch one 19 below. The copper column three 16 is obtained by rotating 90° clockwise to obtain the copper column four 17. The copper column three 16 and the copper column four 17 are connected with the strip-shaped metal patch two 10 above and the metal ground layer 6 below. The copper column five 18 is located at the lower right corner of the super surface, connected with the super surface radiation part 3_2 above and the antenna excitation source below to provide excitation for the super surface. The radius r1 of the copper column one 14 and the copper column two 15 is 0.3 mm, the height h3 is 3 mm, the distance d4 from the edge of the super surface is 0.8 mm, and d5 is 10 mm. The radius r2 of the copper column three 16 and the copper column four 17 is 0.3 mm, the height h4 is 3.1 mm, the distance d6 from the edge of the super surface unit is 15.8 mm, and d7 is 10 mm. The radius r3 of the copper column five 18 is 0.3 mm, the height h5 is 3.1 mm, the distance d8 from the edge of the super surface unit is 4.5 mm, and d9 is 4.5 mm.

[0073] According to the application Figure 5The direct current bias layer 5 is composed of a direct current bias metal patch one 19, a direct current bias metal patch two 20, a via one 23, a via two 24 and a via three 25. The direct current bias metal patch one 19 is obtained by rotating the direct current bias metal patch one 19 by 90 degrees counterclockwise, and the direct current bias metal patch one 19 is a combination of a fan-shaped metal patch 21 and a rectangular metal patch 22. The distance d10 from the direct current bias metal patch one 19 to the edge of the metasurface unit is 0 mm. Among them, the angle θ of the fan-shaped metal patch 21 is 130°, the radius r6 is 2 mm, the length L5 of the rectangular metal patch 22 is 1 mm, and the width w5 is 0.5 mm.

[0074] The via one 23 is obtained by rotating the via one 23 by 90 degrees counterclockwise, the copper column three 16 passes through the via two 24, and the copper column four 17 passes through the via one 23. The radius r4 is 0.25 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column. The copper column five 18 passes through the via three 25, the radius r5 is 0.3 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column.

[0075] Referring to Figure 6 The metal ground layer 6 is a metal patch with a side length L6 of 20 mm, which connects the copper column three 16 and the copper column four 17, and has a via four 26 formed thereon, so that the copper column five 18 passes through the via. The radius r7 of the via is 0.5 mm, and the distance to the edge of the metasurface unit is the same as the corresponding copper column.

[0076] Referring to Figure 7 The metasurface is composed of 16x16 basic structural units copied and translated, and the copied and translated period p is 20 mm.

[0077] The parameters used in this embodiment are shown in Table 2.

[0078] Table 2 Parameter list in Example 2

[0079] L1 L2 L3 L4 L5 L6 h1 h2 6.85 mm 0.5 mm 5.65 mm 8.6 mm 1 mm 20 mm 3 mm 0.1 mm h3 h4 h5 w1 w2 w3 w4 w5 3 mm 3.1 mm 3.1 mm 1.55 mm 0.5 mm 2.95 mm 0.3 mm 0.5 mm r1 r2 r3 r4 r5 r6 r7 d1 0.3 mm 0.3 mm 0.3 mm 0.25 mm 0.3 mm 2 mm 0.5 mm 0.2 mm d2 d3 d4 d5 d6 d7 d8 d9 1.1 mm 2.34 mm 0.8 mm 10 mm 15.8 mm 10 mm 4.5 mm 4.5 mm d10 p θ 0 mm 20 mm 130°

[0080] The technical effects of the present application are further described in combination with simulation experiments:

[0081] 1. Simulation software: commercial simulation software CST2022, commercial simulation software HFSS2020.

[0082] 2. Simulation content and results:

[0083] The basic unit in this embodiment 1 is simulated under the condition of infinite periodic array, and the S parameters in the range of 7.3-7.8 GHz are obtained. The results are as follows Figure 9As shown, under the x-polarized incident wave, the S11 of the open state "1" state and the off state "0" state of the PIN diode is greater than -4.5 dB in the low frequency band 7.3-7.8 GHz, realizing in-band transmission. Under the y-polarized incident wave, the S11 of the open state "1" state and the off state "0" state of the PIN diode is greater than -4.5 dB in the low frequency band 7.3-7.8 GHz, realizing in-band transmission.

[0084] The basic unit in Embodiment 1 is simulated under the condition of an infinite periodic array, and the phase results thereof in the range of 7.3-7.8 are obtained. The results are shown in the following table: Figure 10 As shown, under the x-polarized incident wave, the phase difference of the open state "1" state and the off state "0" state of the PIN diode produces a phase difference of 160-200 degrees in the low frequency band 7.3-7.8 GHz, and under the y-polarized incident wave, the phase difference of the open state "1" state and the off state "0" state of the PIN diode produces a phase difference of 160-200 degrees in the low frequency band 7.3-7.8 GHz.

[0085] The RCS of the 16x16 metasurface composed of the basic unit in Embodiment 1 is simulated and compared with the RCS simulation results of the same area floor, as shown in the following table: Figure 13 As shown, there is a significant RCS reduction effect in the range of 7.4-7.8 GHz.

[0086] Working principle of the present application:

[0087] The metasurface unit has two states of open state "1" state and off state "0" state, and the switching of the two working states is controlled by feeding the PIN diode with a bias voltage. By controlling the working state of the PIN tube on each unit on the metasurface array, the metasurface can have the ability to manipulate electromagnetic waves, thereby realizing the effect of RCS reduction of the metasurface. On the other hand, when different phase excitation signals are fed to each unit of the metasurface, the radiation characteristics of the metasurface can be adjusted, thereby realizing different radiation beams.

[0088] The above content only illustrates the technical idea of the present application, and cannot limit the protection scope of the present application. Any modification made according to the technical idea of the present application on the basis of the technical solution falls within the protection scope of the claims of the present application.

Claims

1. A metasurface-based integrated antenna structure for radiation scattering, characterized in that, The super surface is composed of n×n basic structure units copied and translated, each of which includes a dielectric layer and a metal layer; The dielectric layer includes an upper first dielectric layer (1) and a lower second dielectric layer (2); The metal layer includes a super surface scattering and radiation layer (3) on the upper surface of the first dielectric layer (1); And a metal ground layer (6) on the lower surface of the second dielectric layer (2); The super surface scattering and radiation layer (3) has scattering and radiation functions, and the copper column layer (4) and the direct current bias layer (5) provide voltage difference and excitation for the super surface; the metal ground layer (6) serves as the floor layer of the entire antenna; The copper column layer (4) includes five copper columns, which are composed of copper column one (14), copper column two (15), copper column three (16), copper column four (17) and copper column five (18), wherein the copper column one (14) and the copper column two (15) pass through the first dielectric layer (1), and the copper column three (16), the copper column four (17) and the copper column five (18) pass through the first dielectric layer (1) and the second dielectric layer (2) at the same time; The direct current bias layer (5) is located on the upper surface of the second dielectric layer (2); the metal ground layer (6) is located on the lower surface of the second dielectric layer (2); The super surface scattering and radiation layer (3) is divided into two parts, one part is a super surface scattering part (3_1), and the other part is a super surface radiation part (3_2), both of which are located on the upper surface of the first dielectric layer (1); The super surface scattering part (3_1) has super surface structures in the x direction and the y direction of the super surface, and the super surface scattering parts (3_1) in the two directions are rotated by 90° along the center of the first dielectric layer (1), the super surface structure is a H-shaped metal strip with two embedded PIN diodes, which is used to realize the control of x polarized incident wave and y polarized incident wave; the super surface radiation part (3_2) is used for radiation of the antenna; the super surface radiation part (3_2) is a square structure, the length and width of the side length are parallel to the outer edge of the first dielectric layer (1), and the super surface scattering parts (3_1) in the two directions are symmetrically arranged on the diagonal lines of the super surface radiation part (3_2); The super surface scattering part (3_1) is composed of super surface structure one (7) and super surface structure two (8), wherein the super surface structure one (7) is obtained by counterclockwise rotation of the super surface structure two (8), and the x polarized incident wave and the y polarized incident wave are controlled respectively; Wherein the super surface structure one (7) is composed of strip-shaped metal patch one (9), strip-shaped metal patch two (10), PIN diode patch (11) and connecting line (12); the strip-shaped metal patch one (9) is located on the outside of the super surface unit, the strip-shaped metal patch two (10) is located on the inside of the super surface unit, the connecting line (12) is arranged between the strip-shaped metal patch one (9) and the strip-shaped metal patch two (10) at the corresponding position, and the PIN diode patch (11) is arranged between the two connecting lines (12).

2. The antenna structure based on the integration of radiation and scattering of the super surface according to claim 1, wherein The length L1 of the strip-shaped metal patch one (9) ranges from 6.75 mm to 6.85 mm, the width w1 ranges from 1.45 mm to 1.55 mm, the length L3 of the strip-shaped metal patch two (10) ranges from 5.55 mm to 5.65 mm, and the width w3 ranges from 2.85 mm to 2.95 mm; the connecting line (12) is symmetrical at both ends of the PIN diode patch (11), the length w4 ranges from 0.25 mm to 0.35 mm, and the width w2 ranges from 0.45 mm to 0.55 mm; The length L2 of the PIN diode patch (11) ranges from 0.45 mm to 0.55 mm, and the width w2 ranges from 0.45 mm to 0.55 mm; The distance d1 of the strip-shaped metal patch one (9) to the edge of the metasurface unit ranges from 0.15 mm to 0.25 mm, the distance d2 between the strip-shaped metal patch one (9) and the strip-shaped metal patch two (10) ranges from 1.05 mm to 1.15 mm, and the distance d3 of the strip-shaped metal patch two (10) to the metasurface radiation part (3_2) ranges from 2.3 mm to 2.4 mm; The metasurface radiation part (3_2) is a square metal patch (13), and the side length L4 ranges from 8.5 mm to 8.6 mm.

3. The metasurface-based antenna structure of claim 1, wherein, The copper column one (14) is connected with the strip-shaped metal patch one (9) above and the direct current bias metal patch one (19) below by rotating 90° clockwise to obtain the copper column two (15); the copper column three (16) is connected with the strip-shaped metal patch two (10) above and the metal ground layer (6) below by rotating 90° clockwise to obtain the copper column four (17); the copper column five (18) is located at the lower right corner of the metasurface, connected with the metasurface radiation part (3_2) above and the antenna excitation source below to provide excitation for the metasurface; The radius r1 of the copper column one (14) and the copper column two (15) ranges from 0.2 mm to 0.3 mm, the height h3 ranges from 2.95 mm to 3.05 mm, the distance d4 to the edge of the metasurface unit ranges from 0.8 mm to 0.9 mm, and d5 ranges from 9.9 mm to 10.1 mm; the radius r2 of the copper column three (16) and the copper column four (17) ranges from 0.2 mm to 0.3 mm, the height h4 ranges from 3.05 mm to 3.3 mm, the distance d6 to the edge of the metasurface unit ranges from 15.8 mm to 15.9 mm, and d7 ranges from 9.9 mm to 10.1 mm; the radius r3 of the copper column five (18) ranges from 0.3 mm to 0.4 mm, the height h5 ranges from 3.05 mm to 3.3 mm, the distance d8 to the edge of the metasurface unit ranges from 4.45 mm to 4.55 mm, and d9 ranges from 4.45 mm to 4.55 mm.

4. The metasurface-based antenna structure of claim 1, wherein, The thickness h1 of the first dielectric layer (1) ranges from 2.95 to 3.05 mm, the thickness h2 of the second dielectric layer (2) ranges from 0.1 to 0.25 mm, and the total thickness ranges from 3.05 to 3.3 mm, and the material of the dielectric substrate (1) is TP-2 material with a relative dielectric constant ε r = 10.2, and the material of the dielectric substrate (2) is FR4 material with a relative dielectric constant ε r = 4.4, and the first dielectric layer (1) and the second dielectric layer (2) have a copper column layer (4) and a direct current bias layer (5) therebetween.

5. The metasurface-based antenna structure of claim 1, wherein, The direct current bias layer (5) is composed of direct current bias metal patch one (19), direct current bias metal patch two (20), via one (23), via two (24) and via three (25); the direct current bias metal patch one (19) is obtained by rotating the direct current bias metal patch two (20) counterclockwise by 90°, the direct current bias metal patch one (19) is composed of a fan-shaped metal patch (21) and a rectangular metal patch (22), the rectangular metal patch (22) is located on the outside, and the fan-shaped metal patch (21) is located on the inside; the via one (23) is arranged along the vertical center line of the direct current bias metal patch one (19); The via two (24) is arranged along the horizontal center line of the direct current bias metal patch two (20); The distance d10 from the direct current bias metal patch one (19) to the edge of the hyper surface unit is 0-0.1mm; wherein the angle θ of the fan-shaped metal patch (21) is 100°-140°, the radius r6 is 2-2.1mm, the length L5 of the rectangular metal patch (22) is 0.95-1.05mm, and the width w5 is 0.45-0.55mm; The via one (23) is obtained by rotating the via two (24) counterclockwise by 90°, the copper column three (16) passes through the via two (24), the copper column four (17) passes through the via one (23), the radius r4 is 0.2-0.3mm, the distance to the edge of the hyper surface unit is the same as the corresponding copper column, the copper column five (18) passes through the via three (25), the radius r5 is 0.3-0.4mm, and the distance to the edge of the hyper surface unit is the same as the corresponding copper column.

6. The metasurface-based antenna structure of claim 5, wherein, The metal ground layer (6) is a metal patch, the side length L6 is 19.9-20.1mm, the copper column three (16) and the copper column four (17) are connected, and a via four (26) is opened on it, so that the copper column five (18) passes through the via; the radius r7 of the via four (26) is 0.45-0.55mm, and the distance to the edge of the hyper surface unit is the same as the corresponding copper column.

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