Driving backplane, preparation method thereof, display device and preparation method thereof

Abstract

A kind of drive backboard and its preparation method, display device and its preparation method;The preparation method of drive backboard includes: providing a substrate (1), substrate (1) has oppositely arranged first face (101) and second face (102), first face (101) and second face (102) are connected with side face (103);Form flexible film layer (16) on first face (101), and flexible film layer (16) is patterned to form first opening portion (161), first opening (161) portion includes sequentially connected first part (1611), second part (1612) and third part (1613);Part of flexible film layer (16) is bent to second face (102), so that first part (1611) is opposite to first face (101), second part (1612) is opposite to side face (103), third part (1613) is opposite to second face (102);With flexible film layer (16) as mask, conductive layer (17) is formed on the side of flexible film layer (16) away from substrate (1), and conductive layer (17) is formed in at least part of first opening portion (161) to form conductive strip (171);At least remove flexible film layer (16) and conductive layer (17) around conductive strip (171).The preparation method process is simple, precision is higher, and will not produce etching foreign matter.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and more specifically, to a driving backplate and a method for manufacturing the driving backplate, a display device including the driving backplate, and a method for manufacturing the display device. Background Technology

[0002] MLED (Micro Light-Emitting Diode) display devices have significant advantages in terms of brightness, resolution, contrast, energy consumption, lifespan, response speed, and thermal stability, and therefore their applications are becoming increasingly widespread.

[0003] However, the current side lead technology for MLEDs is difficult to meet customer requirements.

[0004] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] The purpose of this disclosure is to overcome the shortcomings of the prior art and provide a driving backplate and a method for manufacturing the driving backplate, a display device including the driving backplate and a method for manufacturing the display device.

[0006] According to one aspect of this disclosure, a method for preparing a drive backplate is provided, comprising:

[0007] A substrate is provided, the substrate having a first surface and a second surface disposed opposite to each other, and a side surface connecting the first surface and the second surface;

[0008] A flexible film layer is formed on the first surface, and the flexible film layer is patterned to form a first opening. The first opening includes a first part, a second part, and a third part connected in sequence.

[0009] A portion of the flexible film layer is bent to the second surface, such that the first portion is opposite to the first surface, the second portion is opposite to the side surface, and the third portion is opposite to the second surface;

[0010] Using the flexible film layer as a mask, a conductive layer is formed on the side of the flexible film layer away from the substrate, and the conductive layer is formed in at least a portion of the first opening to form a conductive strip;

[0011] At least the flexible film layer and the conductive layer around the conductive strip shall be removed.

[0012] In one exemplary embodiment of this disclosure, before patterning the flexible film layer, the preparation method further includes:

[0013] An isolation layer is formed on the side of the flexible film layer away from the substrate.

[0014] The flexible film layer is patterned while the isolation layer is patterned, so that the isolation layer forms a second opening. The patterning rate of the isolation layer is less than the patterning rate of the flexible film layer, so that a protrusion protruding from the flexible film layer is formed on the side of the isolation layer near the second opening.

[0015] In one exemplary embodiment of this disclosure, the material of the isolation layer is inorganic, and the material of the flexible membrane layer is organic.

[0016] In one exemplary embodiment of this disclosure, after patterning the flexible film layer, the preparation method further includes:

[0017] A portion of the substrate is removed so that the orthographic projections of the second and third portions onto a first plane do not overlap with the orthographic projections of the substrate onto the first plane, the first plane being parallel to the substrate.

[0018] In one exemplary embodiment of this disclosure, the fabrication method further includes, before removing a portion of the substrate:

[0019] The flexible film layer is bent away from the second surface, so that a portion of the flexible film layer is separated from the substrate.

[0020] In one exemplary embodiment of this disclosure, after removing a portion of the substrate, the fabrication method further includes:

[0021] The edges connecting the side surface to the first surface and the edges connecting the side surface to the second surface are processed to form chamfers.

[0022] In one exemplary embodiment of this disclosure, removing at least the flexible film layer and the conductive layer around the conductive strip includes:

[0023] Peel the flexible film layer from the second surface, the end surface, and at least a portion of the first surface;

[0024] At least the flexible film layer and the conductive layer surrounding the conductive strip are removed.

[0025] In one exemplary embodiment of this disclosure, after bending a portion of the flexible film layer to the second surface, the preparation method further includes:

[0026] A set tension is applied to the end of the flexible film layer that is bent to the second surface, so that the flexible film layer is bonded to the substrate.

[0027] In one exemplary embodiment of this disclosure, after patterning the flexible film layer to form the first opening, the preparation method further includes:

[0028] Multiple switch units and multiple connecting wires are formed in an array on one side of the substrate, and the connecting wires connect the switch units and the conductive strip.

[0029] A metal layer is formed on the side of the switching unit away from the substrate, and the metal layer is connected to the switching unit;

[0030] A protective material layer is formed on the side of the metal layer away from the substrate.

[0031] The protective material layer and the metal layer are patterned sequentially, with the protective material layer forming a protective layer and the metal layer forming connection pins;

[0032] An insulating layer group is formed on the side of the protective layer away from the substrate, and the insulating layer group is patterned to form vias that connect to the protective layer.

[0033] In one exemplary embodiment of this disclosure, the protective material layer is made of oxide.

[0034] In an exemplary embodiment of this disclosure, the set etching amount of the protective material layer is greater than the set etching amount of the metal layer, so that after the protective material layer and the metal layer are patterned sequentially, the orthographic projection of the protective layer on the substrate is located within the orthographic projection of the side of the connection pin away from the substrate on the substrate.

[0035] In one exemplary embodiment of this disclosure, before forming a metal layer on the side of the switching unit away from the substrate, the fabrication method further includes:

[0036] The first conductive layer is formed on the side of the switching unit away from the substrate, and the metal layer is formed on the side of the first conductive layer away from the substrate.

[0037] While the metal layer is patterned, the first conductive layer is also patterned to form conductive pins.

[0038] According to another aspect of this disclosure, a drive backplane is provided, which is prepared by any of the preparation methods described above.

[0039] In one exemplary embodiment of this disclosure, the drive backplane includes:

[0040] A substrate has a first surface and a second surface disposed opposite to each other, and a side surface is connected between the first surface and the second surface;

[0041] A flexible membrane layer is disposed on the first surface;

[0042] A buffer layer is disposed on the side of the flexible film layer away from the substrate.

[0043] A conductive strip is disposed at at least one end of the substrate. The conductive strip includes a first conductive portion, a second conductive portion, and a third conductive portion connected in sequence. The first conductive portion is disposed on the first surface, the second conductive portion is disposed on the side surface, and the third conductive portion is disposed on the second surface.

[0044] In one exemplary embodiment of this disclosure, the drive backplane further includes:

[0045] An isolation layer is disposed between the flexible membrane layer and the buffer layer.

[0046] In one exemplary embodiment of this disclosure, the drive backplane further includes:

[0047] Multiple arrayed switching units and multiple connecting wires are disposed on the side of the buffer layer away from the substrate, and the connecting wires connect the switching units and the conductive strip;

[0048] A connection pin is located on the side of the switching unit away from the substrate, and the connection pin is connected to the switching unit;

[0049] A protective layer is provided on the side of the connection pin away from the substrate.

[0050] An insulating layer group is disposed on the side of the protective layer away from the substrate, and the insulating layer group is provided with a via, the via communicating with the protective layer.

[0051] According to another aspect of this disclosure, a method for manufacturing a display device is provided, comprising:

[0052] The drive backplate is prepared by any of the above-described methods.

[0053] Remove at least part of the protective layer to expose at least part of the connection pins;

[0054] A light-emitting device is mounted on one side of the drive backplate, and the light-emitting device is connected to the connection pin.

[0055] According to another aspect of this disclosure, a display device is provided, which is manufactured by the display device manufacturing method described above.

[0056] In one exemplary embodiment of this disclosure, the light-emitting device is a miniature light-emitting diode.

[0057] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0058] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0059] Figure 1 This is a schematic flowchart illustrating an example embodiment of the method for fabricating the drive backplane of this disclosure.

[0060] Figure 2 This is a schematic diagram of the structure after patterning the flexible film layer in the method for preparing the drive backplate of this disclosure.

[0061] Figure 3 This is a partial cross-sectional view of the flexible film layer and the isolation layer after patterning in the fabrication method of the drive backplate of this disclosure.

[0062] Figures 4-9 This is a structural schematic diagram of each step in the process of forming a switching unit in the display area in the fabrication method of the driving backplane of this disclosure.

[0063] Figures 10-16 This is a schematic diagram of the various steps in the side lead fabrication process of the drive backplane fabrication method disclosed herein.

[0064] Figure 17 This is a schematic diagram of an example embodiment of the drive backplane of this disclosure.

[0065] Figure 18 This is a schematic flowchart illustrating an example embodiment of the method for manufacturing the display device disclosed herein.

[0066] Figure 19 This is a schematic diagram of the structure of the drive backplane after the protective layer has been removed.

[0067] Figure 20 This is a schematic diagram of an example embodiment of the display device disclosed herein.

[0068] Explanation of reference numerals in the attached figures:

[0069] 1. Substrate; 101. First side; 102. Second side; 103. Side side; 1a. Substrate mother plate;

[0070] 2. Light-blocking layer; 3. Buffer layer;

[0071] 4. Active layer; 41. Conductor section; 42. Channel section;

[0072] 5. Gate insulating layer; 6. Gate electrode; 61. Connecting wire;

[0073] 7. Interlayer dielectric layer; 71. First via; 72. Second via;

[0074] 81. Source; 82. Drain; 83. Ground;

[0075] 9. First planarization layer; 91. Third via; 92. Fourth via;

[0076] 10. First insulating layer; 1001. Fifth via; 1002. Sixth via;

[0077] 11. First conductive layer; 111. Conductive pin;

[0078] 12. Metal layer; 121. Connection pin;

[0079] 13. Protective material layer; 131. Protective layer;

[0080] 14. Second insulating layer; 15. Second planarization layer; 151. Seventh via; 152. Eighth via;

[0081] 16. Flexible membrane layer; 161. First opening; 1611. First part; 1612. Second part; 1613. Third part;

[0082] 17. Conductive layer; 171. Conductive strip; 1711. First conductive portion; 1712. Second conductive portion; 1713. Third conductive portion;

[0083] 18. Photoresist; 19. Connector;

[0084] 20. Isolation layer; 201. Protrusion; 202. Second opening;

[0085] 21. Shielding plate; 22. Light-emitting device; 23. Circuit board;

[0086] AA, display area; FA, non-display area. Detailed Implementation

[0087] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore detailed descriptions of them will be omitted. Furthermore, the drawings are merely illustrative of this disclosure and are not necessarily drawn to scale.

[0088] Although relative terms such as "up" and "down" are used in this specification to describe the relative relationship of one component of an icon to another, these terms are used only for convenience, such as according to the orientation of the examples shown in the accompanying drawings. It is understood that if the device of the icon is flipped upside down, the component described as "up" will become the component described as "down." When a structure is "up" of another structure, it may mean that the structure is integrally formed on the other structure, or that the structure is "directly" mounted on the other structure, or that the structure is "indirectly" mounted on the other structure through another structure.

[0089] The terms “a,” “one,” “the,” “the,” and “at least one” are used to indicate the presence of one or more elements / components / etc.; the terms “including” and “having” are used to indicate an open-ended inclusion and to mean that there may be other elements / components / etc. in addition to the listed elements / components / etc.; the terms “first,” “second,” and “third,” etc., are used only as markers and are not a limitation on the number of objects.

[0090] In related technologies, a conductive layer can be formed by 3D sputtering at the end of the substrate where side leads need to be formed, and then a side conductive strip can be formed by laser etching. However, the laser width is relatively large, so the etching accuracy is poor and it is not suitable for products with high precision requirements. Moreover, the solid particles formed after the laser ablation of the conductive layer are not easy to remove and may fall into the display area AA, affecting the display, or may adhere to the conductive strip, affecting the conductivity. Alternatively, a disposable mask can be used as a mask, and then 3D sputtering can be performed to form the conductive strip. However, the mask needs to be aligned, which increases the alignment process, thereby increasing costs and reducing efficiency.

[0091] Furthermore, the bottleneck in MLED technology lies in reducing the seam width, which is limited by technologies such as side lead-in wiring. Improvements in side lead-in wiring are highly beneficial for reducing seam width.

[0092] This disclosure provides an exemplary embodiment of a method for fabricating a drive backplate, referring to... Figure 1 As shown, the preparation method may include the following steps:

[0093] Step S10: A substrate 1 is provided, the substrate 1 having a first surface 101 and a second surface 102 disposed opposite to each other, and a side surface 103 is connected between the first surface 101 and the second surface 102.

[0094] Step S20: A flexible film layer 16 is formed on the first surface 101, and the flexible film layer 16 is patterned to form a first opening 161. The first opening 161 includes a first part 1611, a second part 1612 and a third part 1613 connected in sequence.

[0095] Step S30: A portion of the flexible film layer 16 is bent to the second surface 102, such that the first portion 1611 is opposite to the first surface 101, the second portion 1612 is opposite to the side surface 103, and the third portion 1613 is opposite to the second surface 102.

[0096] In step S40, using the flexible film layer 16 as a mask, a conductive layer 17 is formed on the side of the flexible film layer 16 away from the substrate 1, and the conductive layer 17 is formed in at least a portion of the first opening 161 to form a conductive strip 171.

[0097] Step S50: Remove at least the flexible film layer 16 and the conductive layer 17 around the conductive strip 171.

[0098] The driving backplate and its preparation method disclosed herein use a flexible film layer 16 formed on one side of the substrate as a mask to directly form a side conductive strip 171 on at least one end of the substrate 1. This eliminates the need for alignment processes, thereby simplifying the process, reducing costs, and improving efficiency. Moreover, the patterning process has high precision, resulting in high precision conductive strip 171 that meets the requirements of high-precision products. Furthermore, the patterning process does not generate etching foreign matter, and the display effect and conductivity are not affected by etching foreign matter.

[0099] The following section details each step of the fabrication method for the drive backplate.

[0100] Step S10: A substrate 1 is provided, the substrate 1 having a first surface 101 and a second surface 102 disposed opposite to each other, and a side surface 103 is connected between the first surface 101 and the second surface 102.

[0101] In this example implementation, refer to Figure 2 As shown, the substrate mother plate 1a is relatively large, allowing multiple drive backplates and other structures to be formed on one substrate mother plate 1a. The dashed line in the figure represents the area of ​​the substrate mother plate 1a occupied by one drive backplate. After cutting the substrate mother plate 1a, multiple substrate substrates 1 are formed.

[0102] The substrate 1 can be a rectangular plate, having a first surface 101 and a second surface 102 disposed opposite to each other, both of which are rectangular; four side surfaces 103, each of which is rectangular, are connected between the first surface 101 and the second surface 102. Of course, in other exemplary embodiments of this disclosure, the substrate 1 can be a circular or elliptical plate, in which case the first surface 101 and the second surface 102 are both circular or elliptical, and there is only one side surface 103 connecting the first surface 101 and the second surface 102; the substrate 1 can also have other shapes, which will not be described in detail here.

[0103] The substrate 1 may include a display area AA and a non-display area FA, with the display area AA and the non-display area FA connected. It should be noted that the division of the display area AA and the non-display area FA in the figure is only schematic and is for ease of understanding, and does not constitute a limitation of this disclosure.

[0104] The substrate 1 can be made of inorganic materials, such as glass, quartz, or metal. It can also be made of organic materials, such as resins like polyimide, polycarbonate, polyacrylate, polyetherimide, polyethersulfone, polyethylene terephthalate, and polyethylene naphthalate. The substrate 1 can be formed from multiple layers of material; for example, it can include multiple base layers, the base layers being made of any of the aforementioned materials. Alternatively, the substrate 1 can be a single layer, made of any of the aforementioned materials.

[0105] Step S20: A flexible film layer 16 is formed on the first surface 101, and the flexible film layer 16 is patterned to form a first opening 161. The first opening 161 may include a first part 1611, a second part 1612 and a third part 1613 connected in sequence.

[0106] In this example implementation, refer to Figure 2 As shown, a flexible film layer 16 is formed on the first surface 101 of the substrate 1 by a coating process. The flexible film layer 16 can be made of organic materials, including but not limited to PI (polyimide), and the thickness of the flexible film layer 16 can be greater than or equal to 5 micrometers and less than or equal to 20 micrometers.

[0107] Reference Figure 3 As shown, an isolation layer 20 is formed on the side of the flexible film layer 16 away from the substrate 1 through processes such as deposition and sputtering. The patterning rate of the isolation layer 20 is less than the patterning rate of the flexible film layer 16. The patterning rate can be the etching rate, that is, the etching rate of the isolation layer 20 is less than the etching rate of the flexible film layer 16.

[0108] The thickness of the isolation layer 20 can be greater than or equal to 0.5 micrometers and less than or equal to 2 micrometers. The material of the isolation layer 20 can be inorganic, including but not limited to metals, such as Al, Mo, etc. The material of the isolation layer 20 can also be silicon oxide, silicon nitride, silicon oxynitride, etc. Of course, the isolation layer 20 can also be other materials, as long as the patterning rate of the isolation layer 20 is less than the patterning rate of the flexible film layer 16. The inorganic isolation layer 20 is less prone to breakage during multiple bending processes in subsequent processes.

[0109] It should be noted that in some other exemplary embodiments of this disclosure, the isolation layer 20 may not be formed on the side of the flexible film layer 16 away from the substrate 1. That is, after the flexible film layer 16 is formed, the flexible film layer 16 is directly patterned.

[0110] The flexible film layer 16 and the isolation layer 20 can cover the entire substrate 1a, and then the unwanted parts are removed during the subsequent patterning process.

[0111] Reference Figure 3 As shown, the flexible film layer 16 and the isolation layer 20 are patterned to form a first opening 161 and a second opening 202. Specifically, a photoresist layer 18 is formed on the side of the isolation layer 20 away from the substrate 1. A mask is placed on the side of the photoresist layer 18 away from the substrate 1. Then, the photoresist layer 18 is illuminated and developed to remove the illuminated photoresist layer 18. Finally, the flexible film layer 16 and the isolation layer 20 are etched using the photoresist layer 18 as a mask.

[0112] First, the isolation layer 20 can be pre-etched to form a small second opening on the isolation layer 20; then, the flexible film layer 16 can be etched using a different gas than the one used in the previous etching. The gas used to etch the flexible film layer 16 has a very low etching rate on the isolation layer 20. Figure 3 As shown, since the etching rate of the isolation layer 20 is less than the etching rate of the flexible film layer 16, after the same etching time, the etching amount of the flexible film layer 16 is greater than the etching amount of the isolation layer 20. This results in the isolation layer 20 forming a protrusion 201 protruding from the flexible film layer 16 in the second opening 202. That is, the second opening 202 is smaller than the first opening 161, and the edge of the second opening 202 is located within the edge of the first opening 161.

[0113] Reference Figure 2As shown, the first opening 161 can be multiple vias, which can be elongated; the via can include a first part 1611, a second part 1612 and a third part 1613; the second part 1612 is connected between the first part 1611 and the third part 1613, and the ends of the first part 1611 and the third part 1613 away from the second part 1612 can be set as square vias, and the second part 1612 can be set as a rectangular via.

[0114] In addition, in some other exemplary embodiments of this disclosure, the first opening 161 may also be a notch (i.e., an open opening), and the notch may be elongated; the specific shape of the notch may be the same as the above-mentioned through hole, except that the side of the third part 1613 away from the second part 1612 is set as an opening, so that the entire first opening 161 is formed as an opening with a notch; furthermore, the ends of the first part 1611 and the third part 1613 away from the second part 1612 may be set as circular through holes or elliptical through holes.

[0115] While patterning the flexible film layer 16 and the isolation layer 20 to form the first opening 161 and the second opening 202, the flexible film layer 16 and the isolation layer 20 in other areas can be removed. For example, a portion of the flexible film layer 16 and the isolation layer 20 in the display area AA can be removed, that is, a portion of the flexible film layer 16 and the isolation layer 20 located in the display area AA is retained. Retaining a portion of the flexible film layer 16 and the isolation layer 20 can prevent the flexible film layer 16 and the isolation layer 20 from being pulled off during the side lead wire process.

[0116] In this example implementation, refer to Figure 4 As shown, after patterning the flexible film layer 16 and the isolation layer 20, a light-shielding layer 2 can be formed on the first surface of the substrate. Then, a buffer layer 3 can be formed on the side of the isolation layer 20 away from the substrate 1 and the side of the light-shielding layer 2 away from the substrate 1, located in the display area AA, thereby covering the isolation layer 20. Of course, if the flexible film layer 16 and the isolation layer 20 are not formed in the display area AA, a buffer layer 3 can be formed on the side of the light-shielding layer 2 away from the substrate 1; if the isolation layer 20 is not formed, a buffer layer 3 can be formed on the side of the flexible film layer 16 away from the substrate 1 and the side of the light-shielding layer 2 away from the substrate 1.

[0117] Multiple arrayed switching units and multiple connecting wires are formed on the side of the buffer layer 3 away from the substrate 1. Each switching unit may include a capacitor and at least two thin-film transistors. The thin-film transistors may include an active layer 4, a gate 6, a source 81, and a drain. Specifically, an active layer 4 is formed on the side of the buffer layer 3 away from the substrate 1. The active layer 4 may include a channel portion 42 and conductor portions 41 disposed at both ends of the channel portion 42. A gate insulating layer 5 is formed on the side of the active layer 4 away from the substrate 1, and a gate 6 is formed on one side of the gate insulating layer 5. Simultaneously with the formation of the gate 6, a [missing information - likely a specific structure or component] is formed on the side of the buffer layer 3 away from the substrate 1. The connecting line 61 has an interlayer dielectric layer 7 formed on the side of the gate 6 away from the substrate 1. A first via 71 and a second via 72 are formed on the interlayer dielectric layer 7. The first via 71 is connected to the conductor portion 41, and the second via 72 is connected to the connecting line 61. A ground line 83, a source 81, and a drain 82 are formed on the side of the interlayer dielectric layer 7 away from the substrate 1. The source 81 and the drain 82 are respectively connected to the two conductor portions 41 through the two first vias 71, and the ground line 83 is connected to the connecting line 61 through the second via 72.

[0118] It should be noted that in cases where thin-film transistors with opposite polarities are used or where the current direction changes during circuit operation, the functions of "source 81" and "drain 82" may sometimes be interchanged. Therefore, in this specification, "source 81" and "drain 82" may be interchanged.

[0119] The connecting wires may include gate wires, data lines, power lines, etc. The connecting wires are connected between the switching unit and the conductive strip 171, and electrical signals are transmitted through the conductive strip 171 and the connecting wires. The gate wires can be formed at the same time as the gate 6 is formed, and the data lines and power lines can be formed at the same time as the source 81 and the drain 82 are formed.

[0120] In addition, while forming the connecting wire, a connecting portion 19 connecting the conductive strip 171 and the connecting wire is formed. The connecting portion 19 is formed at one end of the first portion 1611 of the first opening 161 near the display area AA and at one end of the second opening 202 near the display area AA.

[0121] A first planarization layer 9 is formed on the side of the switching unit away from the substrate 1, and a third via 91 and a fourth via 92 are formed on the first planarization layer 9; a first insulating layer 10 is formed on the side of the first planarization layer 9 away from the substrate 1, and a fifth via and a sixth via 1002 are formed on the first insulating layer 10.

[0122] A first conductive layer 11 is formed on the side of the insulating layer away from the substrate 1. The first conductive layer 11 is connected to the source and drain electrodes through two third vias 91, and to the ground wire 83 through a fourth via 92. The first conductive layer 11 may be a nickel-molybdenum alloy. The first conductive layer 11 can prevent the subsequently formed metal layer 12 from penetrating into the film layer below the metal layer 12.

[0123] A metal layer 12 is deposited on the side of the first conductive layer 11 away from the substrate 1. The metal layer 12 can be made of copper, or other metals. During the high-temperature annealing process, the metal layer 12 is prone to natural oxidation. The metal layer 12 after natural oxidation has poor conductivity and poor adhesion to gold in the subsequent gold plating process, which affects the performance of the driving backplane. However, if the high-temperature annealing process is not performed, it will cause abnormalities in the thin-film transistor, such as discrete transfer curves, positive or negative Vth bias, etc.

[0124] A protective material layer 13 is deposited on the side of the metal layer 12 away from the substrate 1. The protective material layer 13 can be an oxide, such as IGZO (Indium Gallium Zinc Oxide) or ITZO (Indium Tin Zinc Oxide). IGZO and ITZO react rapidly with dilute acids. Of course, the protective material layer 13 can also be other oxides. The thickness of the protective material layer 13 is greater than or equal to 10 nm and less than or equal to 50 nm. During the deposition of the protective material layer 13, it is not necessary to add O2 for reactive sputtering, and it will not cause oxidation of the metal layer 12.

[0125] During the high-temperature annealing process, the protective material layer 13 can protect the metal layer 12 and prevent the metal layer 12 from undergoing natural oxidation. This allows the driving backplane to be annealed at high temperatures, thereby preventing abnormalities such as transfer curve dispersion, Vth positive bias, or negative bias in the thin-film transistor.

[0126] Reference Figures 5-7As shown, photoresist 18 is formed on the side of metal layer 12 away from substrate 1. A photomask is placed on the side of photoresist 18 away from substrate 1. The photoresist 18 is exposed and developed using the photomask as a mask. Then, using the remaining photoresist 18 as a mask, the protective material layer 13, metal layer 12, and first conductive layer 11 are etched sequentially. Specifically, the protective material layer 13 is etched first to form a protective layer 131, and then the metal layer 12 and the first conductive layer 11 are etched. The metal layer 12 is etched to form connection pins 121, and the first conductive layer 11 is etched to form conductive pins 111. The set etching amount of the protective material layer 13 is greater than the set etching amount of the metal layer 12, so that after the protective material layer 13 and the metal layer 12 are patterned sequentially, the orthographic projection of the protective layer 131 on substrate 1 is located within the orthographic projection of the side of the connection pins 121 away from substrate 1 on substrate 1.

[0127] Because the metal layer 12 is relatively thick, the etching time is long, which can easily lead to the formation of a frustum or truncated cone structure with a smaller upper part and a larger lower part. For example, the metal layer 12 can be etched to form a frustum-shaped connection pin 121, with the diameter of the side of the connection pin 121 away from the substrate 1 being R1 and the diameter of the side of the connection pin 121 close to the substrate 1 being R2, and R1 being smaller than R2. If the protective material layer 13 maintains the same etching amount as the metal layer 12, for example, the protective material layer 13 can be etched to form a circular plate with a diameter of R2. The diameter of the protective layer 131 is larger than the diameter R1 of the side of the connection pin 121 away from the substrate 1, causing the edge of the protective layer 131 to protrude beyond the edge of the connection pin 121. During the subsequent deposition of the second insulating layer 14, the second insulating layer 14 is prone to breakage, thus failing to provide insulation protection for the connection pin 121.

[0128] It should be noted that the etching amount refers to the etching amount in the direction parallel to the surface of the substrate 1 facing the metal layer 12.

[0129] Therefore, when etching the protective material layer 13, it is necessary to ensure that there is a certain amount of over-etching on the protective material layer 13, that is, the set etching amount of the protective material layer 13 is greater than the set etching amount of the metal layer 12; so that the orthographic projection of the protective layer 131 on the substrate 1 is located within the orthographic projection of the side of the connection pin 121 away from the substrate 1 on the substrate 1. That is, the orthographic projection of the protective layer 131 on the substrate 1 can completely coincide with the orthographic projection of the side of the connection pin 121 away from the substrate 1 on the substrate 1, or the orthographic projection of the protective layer 131 on the substrate 1 can be located within the orthographic projection of the side of the connection pin 121 away from the substrate 1 on the substrate 1, that is, the orthographic projection of the protective layer 131 on the substrate 1 is smaller than the orthographic projection of the side of the connection pin 121 away from the substrate 1 on the substrate 1.

[0130] This prevents the second insulating layer 14 from breaking during its subsequent formation, thus enabling the second insulating layer 14 to provide insulation protection for the connection pin 121.

[0131] Reference Figure 8 As shown, remove photoresist 18. (Refer to...) Figure 9 As shown, a second insulating layer 14 is formed on the side of the protective layer 131 away from the substrate, and a second planarization layer 15 is formed on the side of the second insulating layer 14 away from the substrate. The second planarization layer 15 and the second insulating layer 14 are patterned to form a seventh via 151 and an eighth via 152. The seventh via 151 can be connected to the source 81, and the eighth via 152 can be connected to the ground line 83.

[0132] After the switch unit and other components are fabricated, the substrate motherboard 1a can be cut into multiple substrate substrates 1, and then the side lead wire process can be performed.

[0133] Step S30: A portion of the flexible film layer 16 is bent to the second surface 102, such that the first portion 1611 is opposite to the first surface 101, the second portion 1612 is opposite to the side surface 103, and the third portion 1613 is opposite to the second surface 102.

[0134] In this example implementation, refer to Figure 10 As shown, the flexible film layer 16 and the isolation layer 20 are bent away from the second surface 102, so that part of the flexible film layer 16 is separated from the substrate 1; then, referring to Figure 11 As shown, the exposed portion of the substrate 1 can be removed by cutting, causing one end of the flexible film layer 16 to protrude beyond the substrate 1. This ensures that after the flexible film layer 16 is flattened, the orthographic projections of the second portion 1612 and the third portion 1613 onto the first plane do not overlap with the orthographic projection of the substrate 1 onto the first plane, which is a plane parallel to the substrate 1. Finally, refer to... Figure 12 As shown, the side surface 103 of the substrate 1 is ground to form a chamfer on the edge connecting the side surface 103 to the first surface 101, and also on the edge connecting the side surface 103 to the second surface 102. The chamfer can be an angled chamfer or a rounded chamfer. The chamfering makes the connection between the first surface 101 and the side surface 103, and between the second surface 102 and the side surface 103, smoother. This also ensures that the subsequent bending of the conductive layer 17 from the first surface 101 to the side surface 103, and from the side surface 103 to the second surface 102, is also smoother, preventing the conductive layer 17 from forming sharp bends that could easily break.

[0135] In this example implementation, refer to Figure 13As shown, the flexible film layer 16 and the isolation layer 20 are bent to the second surface 102 at the end away from the display area AA, and the first part 1611 of the first opening 161 is opposite to the first surface 101, the second part 1612 of the first opening 161 is opposite to the side surface 103, and the third part 1613 of the first opening 161 is opposite to the second surface 102.

[0136] A set tension can be applied to the flexible film layer 16 and the isolation layer 20. Specifically, a tension parallel to the substrate 1 is applied to the end of the flexible film layer 16 bent to the second surface 102, ensuring complete adhesion between the bent flexible film layer 16 and the substrate 1, thus preventing gaps between them. If gaps exist between the flexible film layer 16 and the substrate 1, during the subsequent formation of the conductive layer 17, conductive material will not only be deposited on the substrate 1 not covered by the flexible film layer 16, but will also form through the gaps on the substrate 1 covered by the flexible film layer 16, affecting the accuracy of the subsequently formed conductive layer 17. Furthermore, if the distance between two adjacent first openings 161 is small, the two formed conductive strips 171 may connect together, causing a short circuit. Complete adhesion between the flexible film layer 16 and the substrate 1 avoids these problems.

[0137] In step S40, using the flexible film layer 16 as a mask, a conductive layer 17 is formed on the side of the flexible film layer 16 away from the substrate 1, and the conductive layer 17 is formed in at least a portion of the first opening 161 to form a conductive strip 171.

[0138] In this example implementation, refer to Figure 13 As shown in the figure, the arrows indicate the sputtering direction. The flexible film layer 16 is used as a mask, that is, the flexible film layer 16 is used as a shielding layer. Two shielding plates 21 are set in the display area AA. One shielding plate 21 is set on the second surface of the substrate, and the other shielding plate 21 is set on the side of the protective layer 131 away from the substrate to prevent conductive material from forming in the display area AA. On the side of the flexible film layer 16 away from the substrate 1, mainly the side where the first opening 161 is set, a sputtering device is set. Multiple sputtering devices can be set. Multiple sputtering devices form a semi-enclosure that surrounds the end of the substrate 1 where the conductive strip 171 needs to be formed. Multiple sputtering devices sputter conductive material into the first opening 161 of the flexible film layer 16 from multiple directions. The conductive material forms a conductive layer 17. The conductive layer formed in the first opening 161 is the conductive strip 171.

[0139] The conductive layer 17 can be a three-layer structure, with the first layer being titanium, the second layer being copper, and the third layer being titanium; it can be sputtered in three stages during a single sputtering process.

[0140] Reference Figure 14 As shown, the conductive strip 171 may include a first conductive portion 1711, a second conductive portion 1712, and a third conductive portion 1713 connected in sequence. The first conductive portion 1711 is formed within a first portion 1611 of the first opening 161 and is located on the first surface 101. The area of ​​the first conductive portion 1711 away from the second conductive portion 1712 is larger and can serve as a connection pad. The second conductive portion 1712 is formed within a second portion 1612 of the first opening 161 and is located on the side surface 103. The third conductive portion 1713 is formed within a third portion 1613 of the first opening 161 and is located on the second surface 102. The area of ​​the third conductive portion 1713 away from the second conductive portion 1712 is larger and can also serve as a connection pad.

[0141] Reference Figure 14 As shown, due to the presence of an isolation layer 20, which is patterned to form a protrusion 201 protruding from the flexible film layer 16, during the sputtering formation of the conductive layer 17 and the conductive strip 171, the protrusion 201 blocks the conductive layer 17 formed on the side of the isolation layer 20 away from the substrate, causing the conductive layer 17 formed on the side away from the substrate to break from the conductive strip 171 formed in the first opening 161. During the subsequent peeling of the flexible film layer 16, the flexible film layer 16 will not carry the conductive strip 171 away, thereby ensuring the stability of the conductive strip 171.

[0142] Step S50: Remove at least the flexible film layer 16 and the conductive layer 17 around the conductive strip 171.

[0143] In this example implementation, refer to Figure 15 As shown, the flexible film layer 16 is peeled off from the second surface 102, the end face, and a portion of the first surface 101, such that at least a portion of the flexible film layer 16 with the first opening 161 is peeled off from the substrate 1; then, referring to Figure 16 As shown, the flexible film layer 16 and conductive layer 17 are removed; thereby removing the flexible film layer 16 and conductive layer 17 around the conductive strip 171; while the conductive strip 171 remains attached to the first surface 101, end surface and second surface 102 of the substrate 1.

[0144] Of course, in some other example embodiments of this disclosure, if the flexible film layer 16 and the conductive layer 17 are not provided in the display area AA, the flexible film layer 16 and the conductive layer 17 can be completely peeled off and removed, leaving only the conductive strip 171.

[0145] The fabrication of the drive backplate is now complete. The conductive strip 171 is fabricated using the above method, which eliminates the need for alignment, thereby simplifying the process and reducing costs. Moreover, the formed conductive strip 171 has high precision and does not produce etching foreign matter.

[0146] It should be noted that although the steps of the method for preparing the drive backplate in this disclosure are described in a specific order in the accompanying drawings, this does not require or imply that these steps must be performed in that specific order, or that all the steps shown must be performed to achieve the desired result. Additional or alternative steps may be omitted, multiple steps may be combined into one step, and / or one step may be broken down into multiple steps.

[0147] Based on the same inventive concept, this disclosure provides an example embodiment of a drive backplane, referring to... Figure 17 As shown, the drive backplate is prepared by any of the preparation methods described above.

[0148] Specifically, the driving backplate may include a substrate 1, a light-shielding layer 2 and a flexible film layer 16 disposed on one side of the substrate 1, an isolation layer 20 disposed on the side of the flexible film layer 16 away from the substrate 1, the flexible film layer 16 having a first opening 161, and the isolation layer 2 having a second opening 202 disposed opposite to the first opening 161, with connecting portions 19 disposed within the second opening 202 and the first opening 161. A conductive strip 171 is disposed at the end of the substrate 1 with the connecting portion 19, and the conductive strip 171 is connected to the connecting portion 19 in a one-to-one correspondence. Alternatively, the isolation layer 20 may be omitted.

[0149] The conductive strip 171 includes a first conductive portion 1711, a second conductive portion 1712, and a third conductive portion 1713 connected in sequence. The first conductive portion 1711 is disposed on the first surface 101, the second conductive portion 1712 is disposed on the side surface 103, and the third conductive portion 1713 is disposed on the second surface 102. The first conductive portion 1711 is connected to the connecting portion 19.

[0150] A buffer layer 3 is provided on the side of the light-shielding layer 2 away from the substrate 1 and on the side of the isolation layer away from the substrate 1. In the absence of the isolation layer 20, a buffer layer 3 is provided on the side of the light-shielding layer 2 away from the substrate 1 and on the side of the flexible film layer 16 away from the substrate 1.

[0151] Multiple arrayed switching units and multiple connecting wires are disposed on the side of the buffer layer 3 away from the substrate 1. Each switching unit may include a capacitor and at least two thin-film transistors. The thin-film transistors may include an active layer 4, a gate 6, a source 81, and a drain. Specifically, an active layer 4 and connecting wires 61 are disposed on the side of the buffer layer 3 away from the substrate 1. The active layer 4 may include a channel portion 42 and conductor portions 41 disposed at both ends of the channel portion 42. A gate insulating layer 5 is disposed on the side of the active layer 4 away from the substrate 1. A gate 6 is disposed on one side of the gate insulating layer 5. An interlayer dielectric layer 7 is disposed on the side of the gate 6 away from the substrate 1. The upper part is provided with a first via 71 and a second via 72. The first via 71 is connected to the conductor part 41, and the second via 72 is connected to the connecting line 61. On the side of the interlayer dielectric layer 7 away from the substrate 1, a ground line 83, a source 81 and a drain 82 are provided. The source 81 and the drain 82 are respectively connected to the two conductor parts 41 through the two first vias 71. The ground line 83 is connected to the connecting line 61 through the second via 72. Setting the ground line 83 as a double-layer structure can reduce the resistance. Moreover, if one line is broken, the other line can transmit signals without affecting the display.

[0152] It should be noted that the thin-film transistor described in this specification is a top-gate thin-film transistor. In other exemplary embodiments of this disclosure, the thin-film transistor may also be a bottom-gate or dual-gate type, and its specific structure will not be described in detail here.

[0153] The connecting wires may include grid wires, data wires, power wires, etc.; the connecting wires are connected between the switch unit and the connecting part 19, and electrical signals are transmitted through the conductive strip 171, the connecting part 19 and the connecting wires.

[0154] A first planarization layer 9 is provided on the side of the switching unit away from the substrate 1, and a plurality of third vias 91 and fourth vias 92 are provided on the first planarization layer 9; a first insulating layer 10 is provided on the side of the first planarization layer 9 away from the substrate 1, and a plurality of fifth vias 1001 and sixth vias 1002 are provided on the first insulating layer 10.

[0155] Conductive pins 111 are provided on the side of the first insulating layer 10 away from the substrate 1. Two conductive pins 111 are connected to the source 81 and the drain 82 respectively through a third via 91 and a fifth via 1001. Another conductive pin 111 is connected to the ground line 83 through a fourth via 92 and a sixth via 1002. The conductive pins 111 can be a nickel-molybdenum alloy.

[0156] A connection pin 121 is provided on the side of the conductive pin 1111 away from the substrate 1. The material of the connection pin 121 can be copper.

[0157] A protective layer 131 is provided on the side of the connection pin 121 away from the substrate 1. The protective layer 131 can be made of oxide, such as IGZO (Indium Gallium Zinc Oxide) or ITZO (Indium Tin Zinc Oxide).

[0158] A second insulating layer 14 is provided on the side of the protective layer 131 away from the substrate. A second planarization layer 15 is provided on the side of the second insulating layer 14 away from the substrate. The second planarization layer 15 and the second insulating layer 14 form an insulating layer group. A seventh via 151 and an eighth via 152 are provided on the insulating layer group. The seventh via 151 can be connected to the source 81, and the eighth via 152 can be connected to the ground line 83.

[0159] Based on the same inventive concept, this disclosure provides an example embodiment of a method for manufacturing a display device, referring to... Figure 18 As shown, the preparation method may include the following steps:

[0160] Step S510: The drive backplate is prepared by any of the above-described methods.

[0161] Step S520: Remove at least a portion of the protective layer 131 to expose at least a portion of the connection pins 121.

[0162] Step S530: Install a light-emitting device 22 on one side of the drive backplate, and connect the light-emitting device 22 to the connection pin 121.

[0163] The fabrication process of the drive backplate has been described in detail above, so it will not be repeated here.

[0164] In this example implementation, refer to Figure 19 As shown, the protective layer 131 can be etched by a low concentration of sulfuric acid to remove the protective layer 131 and expose the connection pin 121; moreover, the low concentration of sulfuric acid will not damage the connection pin 121.

[0165] Reference Figure 20 As shown, flux is printed on a stencil on one side of the drive backplate and then a certain pressure is applied to attach the light-emitting device 22, that is, the light-emitting device 22 is attached to one side of the drive backplate by "mass transfer"; the light-emitting device 22 is connected to the connection pin 121. Specifically, the light-emitting device 22 has an anode and a cathode. The anode of the light-emitting device 22 can be connected to the connection pin 121 connected to the source, and the cathode of the light-emitting device 22 can be connected to the connection pin 121 connected to the ground wire 83.

[0166] Based on the same inventive concept, this disclosure provides an example embodiment of a display device, referring to... Figure 20 As shown, the display device is manufactured using the display device manufacturing method described above.

[0167] The display device may include a driving backplate and a light-emitting device 22 disposed on one side of the driving backplate. The light-emitting device 22 may be a micro light-emitting diode. The micro light-emitting diode may be a micro light-emitting diode (Micro Light-Emitting Diode) with a chip size reduced to less than 50μm; or it may be a sub-millimeter light-emitting diode (Mini Light-Emitting Diode), which is an LED device with a chip size between 50 and 200μm.

[0168] A circuit board 23 is also provided on the side of the drive backplate away from the light-emitting device 22. The circuit board 23 is provided with connecting pads, a controller and various components. The controller and various components are electrically connected to the connecting pads. The connecting pads are connected to the third conductive part 1713 of the conductive strip 171. Their connection can be achieved by bonding with anisotropic conductive adhesive.

[0169] The specific type of display device is not particularly limited; any type of display device commonly used in the field is acceptable, such as mobile devices like mobile phones, wearable devices like watches, VR devices, etc. Those skilled in the art can make the appropriate selection based on the specific purpose of the display device, which will not be elaborated further here.

[0170] It should be noted that other necessary components and parts may also be included. Taking the display as an example, specific components may include the casing, power cord, etc. Those skilled in the art can make corresponding additions according to the specific usage requirements of the display device, which will not be elaborated here.

[0171] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A method for preparing a drive backplate, wherein, include: A substrate is provided, the substrate having a first surface and a second surface disposed opposite to each other, and a side surface connecting the first surface and the second surface; A flexible film layer is formed on the first surface, and the flexible film layer is patterned to form a first opening. The first opening includes a first part, a second part, and a third part connected in sequence. A portion of the flexible film layer is bent to the second surface, such that the first portion is opposite to the first surface, the second portion is opposite to the side surface, and the third portion is opposite to the second surface; Using the flexible film layer as a mask, a conductive layer is formed on the side of the flexible film layer away from the substrate, and the conductive layer is formed in at least a portion of the first opening to form a conductive strip; At least the flexible film layer and the conductive layer surrounding the conductive strip shall be removed; Before patterning the flexible film layer, the preparation method further includes: An isolation layer is formed on the side of the flexible film layer away from the substrate. The flexible film layer is patterned while the isolation layer is patterned, so that the isolation layer forms a second opening. The patterning rate of the isolation layer is less than the patterning rate of the flexible film layer, so that the isolation layer forms a protrusion protruding from the flexible film layer at the second opening.

2. The method for preparing the drive backplate according to claim 1, wherein, The isolation layer is made of inorganic materials, while the flexible membrane layer is made of organic materials.

3. The method for preparing the drive backplate according to claim 1, wherein, After patterning the flexible film layer, the preparation method further includes: A portion of the substrate is removed so that the orthographic projections of the second and third portions onto a first plane do not overlap with the orthographic projections of the substrate onto the first plane, the first plane being parallel to the substrate.

4. The method for preparing the drive backplate according to claim 3, wherein, Before removing a portion of the substrate, the fabrication method further includes: The flexible film layer is bent away from the second surface, so that a portion of the flexible film layer is separated from the substrate.

5. The method for preparing the drive backplate according to claim 3, wherein, After removing a portion of the substrate, the fabrication method further includes: The edges connecting the side surface to the first surface and the edges connecting the side surface to the second surface are processed to form chamfers.

6. The method for preparing the drive backplate according to claim 5, wherein, The removal of at least the flexible film layer and the conductive layer around the conductive strip includes: Peel the flexible film layer from the second surface, the end surface, and at least a portion of the first surface; At least the flexible film layer and the conductive layer surrounding the conductive strip are removed.

7. The method for preparing the drive backplate according to claim 1, wherein, After bending a portion of the flexible film layer to the second surface, the preparation method further includes: A set tension is applied to the end of the flexible film layer that is bent to the second surface, so that the flexible film layer is bonded to the substrate.

8. The method for preparing the drive backplate according to claim 1, wherein, After patterning the flexible film layer to form the first opening, the preparation method further includes: Multiple switch units and multiple connecting wires are formed in an array on one side of the substrate, and the connecting wires connect the switch units and the conductive strip. A metal layer is formed on the side of the switching unit away from the substrate, and the metal layer is connected to the switching unit; A protective material layer is formed on the side of the metal layer away from the substrate. The protective material layer and the metal layer are patterned sequentially, with the protective material layer forming a protective layer and the metal layer forming connection pins; An insulating layer group is formed on the side of the protective layer away from the substrate, and the insulating layer group is patterned to form vias that connect to the protective layer.

9. The method for preparing the drive backplate according to claim 8, wherein, The protective material layer is made of oxide.

10. The method for preparing the drive backplate according to claim 8, wherein, The set etching amount of the protective material layer is greater than the set etching amount of the metal layer, so that after the protective material layer and the metal layer are patterned in sequence, the orthogonal projection of the protective layer on the substrate is located within the orthogonal projection of the side of the connection pin away from the substrate on the substrate.

11. The method for preparing the drive backplate according to claim 8, wherein, Before forming a metal layer on the side of the switching unit away from the substrate, the fabrication method further includes: A first conductive layer is formed on the side of the switching unit away from the substrate, and a metal layer is formed on the side of the first conductive layer away from the substrate. While the metal layer is patterned, the first conductive layer is also patterned to form conductive pins.

12. A drive backplane, wherein, The drive backplate is prepared by the preparation method according to any one of claims 1 to 11.

13. The drive backplane according to claim 12, wherein, The drive backplate includes: A substrate has a first surface and a second surface disposed opposite to each other, and a side surface is connected between the first surface and the second surface; A flexible membrane layer is disposed on the first surface; A buffer layer is disposed on the side of the flexible film layer away from the substrate. A conductive strip is disposed at at least one end of the substrate. The conductive strip includes a first conductive portion, a second conductive portion, and a third conductive portion connected in sequence. The first conductive portion is disposed on the first surface, the second conductive portion is disposed on the side surface, and the third conductive portion is disposed on the second surface.

14. The drive backplane according to claim 13, wherein, The drive backplate also includes: An isolation layer is disposed between the flexible membrane layer and the buffer layer.

15. The drive backplane according to claim 13, wherein, The drive backplate also includes: Multiple arrayed switching units and multiple connecting wires are disposed on the side of the buffer layer away from the substrate, and the connecting wires connect the switching units and the conductive strip; A connection pin is located on the side of the switching unit away from the substrate, and the connection pin is connected to the switching unit; A protective layer is provided on the side of the connection pin away from the substrate. An insulating layer group is disposed on the side of the protective layer away from the substrate, and the insulating layer group is provided with a via, the via communicating with the protective layer.

16. A method for manufacturing a display device, wherein, include: The drive backplate is prepared by the method described in any one of claims 1 to 11; Remove at least part of the protective layer to expose at least part of the connection pins; A light-emitting device is mounted on one side of the drive backplate, and the light-emitting device is connected to the connection pin.

17. A display device, wherein, It is prepared by the method of preparing the display device according to claim 16.

18. The display device according to claim 17, wherein, The light-emitting device is a miniature light-emitting diode.

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