A system and method for preparing sample solutions in semiconductor processes.

Abstract

This invention relates to the semiconductor field, disclosing a system and method for preparing sample solutions in semiconductor processes. The system includes a reaction chamber, a gas purging device, an exhaust device, a rinsing device, a flipping device, a lifting device, a standard solution supply device, a standard solution loading device, and a sampling device. The reaction chamber is connected to the gas purging device, the exhaust device, and the rinsing device. The reaction chamber has an opening serving as an inlet and outlet for transferring wafers. The standard solution loading device is located at the bottom of the reaction chamber and is connected to both the standard solution supply device and the sampling device. The flipping device is located inside the reaction chamber. The lifting device receives the wafer from the flipping device and adjusts the height and / or level of the wafer, ensuring that the surface of the wafer contacts the standard solution loaded in the standard solution loading device through cooperation with the flipping device. The sample preparation process requires no manual operation, avoids contamination, is highly safe, efficient, and facilitates continuous sample preparation.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a system and method for preparing sample solutions in semiconductor processes. Background Technology

[0002] Thin film and diffusion processes play a crucial role in semiconductor manufacturing. Many electrical properties of semiconductors are related to the concentration of doping elements. To improve the electrical performance of semiconductor devices, elements such as boron (B) and phosphorus (P) are typically doped during thin film and diffusion processes to enhance the material's conductivity. Therefore, the accuracy of doping element concentration is critical. Consequently, when performing concentration tests on materials such as Poly, GeSi, and BPSG (Boron Phosphorus Silicon Glass), extremely high precision is required in sample acquisition and preparation. Summary of the Invention

[0003] According to some embodiments, the first aspect of this application provides a system for preparing sample solutions in a semiconductor process, comprising: a reaction chamber, a gas purging device, an exhaust device, a rinsing device, a flipping device, a lifting device, a standard solution supply device, a standard solution loading device, and a sampling device;

[0004] The reaction chamber is connected to the gas purging device, the exhaust device, and the flushing device, respectively;

[0005] The reaction chamber has an opening that serves as an inlet and outlet for transferring wafers.

[0006] The standard solution loading device is located at the bottom of the reaction chamber and is connected to the standard solution supply device and the sampling device, respectively. It is used to receive the standard solution from the standard solution supply device and output the prepared sample solution to the sampling device.

[0007] The flipping device is disposed inside the reaction chamber and is used to adsorb, transport and flip the wafer;

[0008] The lifting device is used to receive the wafer from the flipping device and adjust the height and / or level of the wafer, so that the surface of the wafer comes into contact with the standard solution loaded in the standard solution loading device through cooperation with the flipping device.

[0009] The applicant discovered in their research that current concentration testing methods for materials such as Poly, SiGe, and BPSG in semiconductor manufacturing involve using a vacuum pen to hold the wafer in an open sample preparation box. The standard solution is first poured evenly onto the front side of the wafer. After the front side is completely dissolved, PFA (Perfluoroalkoxy) tweezers are used to flip the wafer over, and the dissolution of the back side continues until complete. The dissolved solution is then collected. This sample preparation process has the following drawbacks:

[0010] ① The manual sample preparation process may introduce contamination factors, leading to misinterpretation of data.

[0011] ② Because the standard solution contains high concentrations of HF and HNO3, it is easy to spill and splash the standard solution when preparing the sample in an open sample preparation box. In addition, the ventilation is not timely, and the sample preparation box needs to be manually cleaned after the sample is prepared, which is time-consuming, labor-intensive and has low safety.

[0012] ③ The timing of manual sample preparation varies, resulting in inconsistent corrosion levels, a risk of excessive corrosion, and poor timeliness.

[0013] The embodiments of this application have at least the following advantages:

[0014] In this application, the sample preparation process takes place inside the reaction chamber. To ensure the cleanliness of the reaction chamber, a cleaning operation is required before sample solution preparation. A gas purging device introduces clean gas into the reaction chamber, working in conjunction with an exhaust device to purge the chamber and ensure the removal of acidic gases. A rinsing device rinses the reaction chamber. During sample preparation, a standard solution supply device introduces standard solution into a standard solution loading device inside the reaction chamber. A flipping device inside the reaction chamber adsorbs and transfers the wafer through an opening to a lifting device. The lifting device adjusts the height and / or level of the wafer, bringing its surface into contact with the standard solution in the loading device for etching. The lifting device also precisely controls the etching time by adjusting the wafer height. After etching one surface of the wafer, the flipping device rotates the wafer at a certain angle and, in conjunction with the lifting device, etches the other surfaces. After sample preparation, the sample solution prepared in the standard solution loading device can be directly output to the sampling device for sampling. After sampling, the reaction chamber can be rinsed using a rinsing device. Therefore, the system for preparing sample solutions in semiconductor processes provided in this application requires no manual operation, avoids introducing contaminants, and ensures data accuracy. During sample preparation, the standard solution carrier is located inside the reaction chamber, preventing spillage and splashing of the standard solution. At the same time, the exhaust device ensures ventilation of the reaction chamber, and the interior of the reaction chamber can be automatically cleaned before and after sample preparation, saving time and effort, ensuring high safety, and facilitating continuous sample preparation. Furthermore, the lifting device precisely controls the etching time during sample preparation, and adjusts the level of the wafer to ensure uniform etching of the wafer surface, resulting in high efficiency.

[0015] In some embodiments, the standard solution loading device includes a loading tray for loading standard solutions, wherein the dimensions of the opening and the bottom of the loading tray satisfy the following: when the wafer is horizontally positioned, the surface of the wafer facing the bottom of the loading tray is allowed to contact the standard solution loaded in the loading tray.

[0016] In some embodiments, the flipping device includes a processor, a sensor, a transmission arm, and a vacuum pen mounted on the transmission arm;

[0017] The sensor, the transmission arm, and the vacuum pen are all connected to the processor via signal.

[0018] The sensor is used to detect the height information of the wafer from the bottom surface of the reaction chamber and / or the level information of the wafer, and sends the height information and / or the level information to the processor;

[0019] One end of the transmission arm is installed on the inner wall of the reaction chamber, and the other end is connected to the vacuum pen ball joint;

[0020] The vacuum pen is used to pick up the wafer and can transport and flip the wafer under the drive of the transmission arm.

[0021] In some embodiments, the sensor is disposed on the inner wall of the reaction chamber; or,

[0022] The sensor is mounted on the transmission arm.

[0023] In some embodiments, the transmission arm includes multiple connecting rods, which are sequentially connected end-to-end.

[0024] In some embodiments, the lifting device includes a lifting rod controller, a drive mechanism, and a plurality of lifting rods that are pulverizedly connected to the drive mechanism;

[0025] The plurality of lifting rods are disposed on the edge of the loading tray and distributed along the circumference of the loading tray;

[0026] The plurality of lifting rods are coplanar with respect to the bottom surface of the reaction chamber in order to support the wafer;

[0027] The drive mechanism is signal-connected to the lifting rod controller and is used to drive the plurality of lifting rods to adjust the height and / or level of the wafer.

[0028] In some embodiments, the gas purging device includes a gas supply unit and a first valve group, the first valve group being disposed on a pipeline between the gas supply unit and the reaction chamber.

[0029] In some embodiments, the first valve group includes a two-position two-way solenoid valve and a first control valve. The two-position two-way solenoid valve is used to control the flow rate of clean gas in the pipeline between the gas supply unit and the reaction chamber; the first control valve is used to control the opening and closing of the pipeline between the gas supply unit and the reaction chamber.

[0030] In some embodiments, the flushing device includes a flushing fluid supply section and a second control valve, the second control valve being disposed on a pipeline between the flushing fluid supply section and the reaction chamber, for controlling the opening and closing of the pipeline.

[0031] In some embodiments, the standard solution supply device includes a standard solution storage tank, a third control valve, a feed pump, and a feed controller. The third control valve, the feed pump, and the feed controller are all disposed on the pipeline between the standard solution storage tank and the reaction chamber. The third control valve is used to control the opening and closing of the pipeline between the standard solution storage tank and the reaction chamber. The feed controller is signal-connected to the feed pump and is used to control the total amount of standard solution entering the reaction chamber.

[0032] In some embodiments, the reaction chamber has a plurality of standard solution inlets, which are arranged circumferentially along the reaction chamber, and each of the plurality of standard solution inlets is connected to the feed controller and the standard solution loading device via pipelines.

[0033] In some embodiments, the sampling device includes a sampling bottle and a second valve assembly, the second valve assembly being disposed on the pipeline between the sampling bottle and the standard solution loading device and located outside the reaction chamber, for controlling the opening and closing of the pipeline.

[0034] In some embodiments, the second valve group includes a three-way valve, a fourth control valve, and a fifth control valve. The first end of the three-way valve is connected to the standard solution loading device via a pipeline, the second end is connected to the sampling bottle via a pipeline, and the third end is connected to a waste discharge pipeline. The fourth control valve is disposed on the pipeline between the three-way valve and the sampling bottle, and the fifth control valve is disposed on the waste discharge pipeline.

[0035] In some embodiments, the system for preparing sample solutions in the semiconductor process further includes a processing unit, which is signal-connected to the gas purging device and used to control the gas purging device to purge the interior of the reaction chamber; and / or

[0036] The processing unit is signal-connected to the rinsing device and is used to control the rinsing device to rinse the interior of the reaction chamber; and / or,

[0037] The processing unit is signal-connected to the flipping device and is used to control the flipping device to adsorb, transport, and flip the wafer; and / or,

[0038] The processing unit is signal-connected to the lifting device and is used to control the lifting device to adjust the height and / or level of the wafer; and / or,

[0039] The processing unit is signal-connected to the standard solution supply device and is used to control the standard solution supply device to deliver a quantitative amount of standard solution into the reaction chamber; and / or,

[0040] The processing unit is signal-connected to the sampling device and is used to control the sampling device to automatically sample.

[0041] According to some embodiments, a second aspect of this application provides a method for preparing a sample solution in a semiconductor process, comprising:

[0042] Perform internal cleaning of the reaction chamber;

[0043] The wafer is transferred to the lifting device via a flipping device, and the height of the wafer is adjusted to a first preset height via the lifting device.

[0044] A quantitative standard solution is introduced into the standard solution loading device, and the liquid level is lower than the first preset height, with the bottom surface of the standard solution loading device as a reference.

[0045] The wafer is adjusted to a horizontal position by the lifting device, and the height of the wafer is adjusted so that the first surface of the wafer comes into contact with the standard solution for first surface etching. The etching time is set to a first preset time.

[0046] After the first surface etching is completed, the wafer is raised to a second preset height by the lifting device, and then the wafer is flipped 180° by the flipping device before being transferred to the lifting device.

[0047] The wafer is adjusted to a horizontal position by the lifting device, and the height of the wafer is adjusted so that the second surface of the wafer comes into contact with the standard solution for second surface etching. The etching time is set to a second preset time, wherein the first surface is opposite to the second surface.

[0048] After the second surface etching is completed, the wafer is raised to a third preset height using the lifting device.

[0049] The sample solution prepared in the standard solution loading device is sampled.

[0050] In some embodiments, performing an internal cleaning operation on the reaction chamber includes:

[0051] Clean gas is introduced into the reaction chamber to perform a purging operation;

[0052] The rinsing solution is introduced into the reaction chamber to perform the rinsing operation.

[0053] In some embodiments, after the second surface etching is completed and the wafer is raised to a third preset height by the lifting device, the method further includes:

[0054] The wafer is adsorbed by the flipping device and transported to the outside of the reaction chamber.

[0055] In some embodiments, after sampling the sample solution prepared in the standard solution loading device, the method further includes:

[0056] The rinsing solution is introduced into the interior of the reaction chamber and the standard solution loading device to perform the rinsing operation. Attached Figure Description

[0057] Figure 1 This is a schematic diagram of a system for preparing sample solutions in a semiconductor process, provided by an embodiment of the present invention.

[0058] Figure 2 A control principle diagram of a system for preparing sample solutions in a semiconductor process is provided in an embodiment of the present invention.

[0059] Figure 3 This is a schematic flowchart of a method for preparing a sample solution in a semiconductor process, provided by an embodiment of the present invention.

[0060] Figure 4 for Figure 3 Flowchart of S301;

[0061] Figure 5 A schematic flowchart of another method for preparing a sample solution in a semiconductor process provided by an embodiment of the present invention;

[0062] Figures 6a-6c This is an internal wafer transfer flowchart for a system for preparing sample solutions in a semiconductor process provided by an embodiment of the present invention.

[0063] Icons: 001 - Wafer; 100 - Reaction Chamber; 200 - Gas Purging Device; 300 - Exhaust Device; 400 - Flushing Device; 500 - Tilting Device; 600 - Lifting Device; 700 - Standard Solution Supply Device; 800 - Loading Tray; 900 - Sampling Device; 1000 - Processing Unit; 110 - Opening; 120 - Standard Solution Inlet; 210 - Gas Supply Section; 220 - Two-Position Two-Way Solenoid Valve; 230 - First Control Valve; 410 - Flushing Liquid supply unit; 420-Second control valve; 510-Processor; 520-Sensor; 530-Drive arm; 540-Vacuum suction pen; 550-Vacuum generator; 610-Lifting rod controller; 620-Drive mechanism; 630-Lifting rod; 710-Standard solution storage tank; 720-Third control valve; 730-Feed pump; 740-Feed controller; 910-Sampling bottle; 920-Three-way valve; 930-Fourth control valve; 940-Fifth control valve. Detailed Implementation

[0064] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0065] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0066] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0067] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0068] According to some embodiments, the first aspect of this application provides a system for preparing a sample solution in a semiconductor process, with reference to... Figure 1The system includes: a reaction chamber 100, a gas purging device 200, an exhaust device 300, a rinsing device 400, a tilting device 500, a lifting device 600, a standard solution supply device 700, a standard solution loading device, and a sampling device 900; the reaction chamber 100 is connected to the gas purging device 200, the exhaust device 300, and the rinsing device 400 respectively; the reaction chamber 100 has an opening 110, which serves as an inlet and outlet for transferring wafer 001; the standard solution loading device is located at the bottom of the reaction chamber 100 and is connected to the standard solution... The supply device 700 and the sampling device 900 are connected to receive the standard solution from the standard solution supply device 700 and output the prepared sample solution to the sampling device 900; the flipping device 500 is disposed inside the reaction chamber 100 and is used to adsorb, transfer and flip the wafer 001; the lifting device 600 is used to receive the wafer 001 from the flipping device 500 and adjust the height and / or level of the wafer 001, so that the surface of the wafer 001 comes into contact with the standard solution loaded in the standard solution loading device through cooperation with the flipping device 500.

[0069] The embodiments of this application have at least the following advantages:

[0070] In this application, the sample preparation process is carried out inside the reaction chamber 100. In order to ensure the cleanliness of the reaction chamber 100, the inside of the reaction chamber 100 needs to be cleaned before the sample solution is prepared. The gas purging device 200 can introduce clean gas into the reaction chamber 100, and together with the exhaust device 300, the inside of the reaction chamber 100 is purged to ensure that the acidic gas inside the reaction chamber 100 is emptied. The rinsing device 400 can rinse the inside of the reaction chamber 100. During sample preparation, the standard solution supply device 700 introduces the standard solution into the standard solution loading device inside the reaction chamber 100. The flipping device 500 inside the reaction chamber 100 can adsorb and transport the wafer 001 through the opening 110 to the lifting device 600. The lifting device 600 can adjust the height and / or level of the wafer 001, ensuring that the surface of the wafer 001 contacts the standard solution loaded in the standard solution loading device for etching. The lifting device 600 can also precisely control the etching time by adjusting the height of the wafer 001. After etching one surface of the wafer 001, the flipping device 500 can flip the wafer 001 at a certain angle and, in conjunction with the lifting device 600, etches the other surfaces of the wafer 001. After sample preparation, the sample solution prepared in the standard solution loading device can be directly output to the sampling device 900 for sampling. After sampling, the reaction chamber 100 can be rinsed using the rinsing device 400. Therefore, the system for preparing sample solutions in the semiconductor process provided in this application requires no manual operation, avoids introducing contaminants, and ensures data accuracy. During sample preparation, the standard solution carrier is located inside the reaction chamber 100, preventing spillage and splashing of the standard solution. At the same time, the exhaust device ensures ventilation of the reaction chamber 100, and the interior of the reaction chamber 100 can be automatically cleaned before and after sample preparation, saving time and effort, ensuring high safety, and facilitating continuous sample preparation. Furthermore, during sample preparation, the lifting device 600 precisely controls the etching time, and at the same time, the lifting device 600 adjusts the level of the wafer 001 to ensure the uniformity of etching on the surface of the wafer 001, which is highly efficient.

[0071] In some embodiments, the reaction chamber 100 has a clean gas inlet and an exhaust port. The clean gas inlet is connected to a gas purging device 200 via a pipeline; the exhaust port is connected to an exhaust device 300, and the gas purging device 200 and the exhaust device 300 cooperate to vent the acidic gas inside the reaction chamber 100. The reaction chamber 100 also has a rinsing liquid inlet and a rinsing liquid outlet. The rinsing liquid inlet is connected to a rinsing device 400 via a pipeline, and the rinsing liquid outlet is used to vent the rinsing liquid inside the reaction chamber 100. It should be noted that the clean gas can be nitrogen, but is not limited to nitrogen. The gas purging device 200 is generally preferably an inexpensive and inert clean gas. The reaction chamber 100 has a standard solution inlet 120 and a sampling port. The standard solution inlet 120 is connected to a standard solution supply device 700 and a standard solution carrier device, respectively, for conveying the standard solution in the standard solution supply device 700 to the standard solution carrier device. The sampling port is connected to the standard solution carrier device and a sampling device 900, respectively, for conveying the sample solution prepared in the standard solution carrier device to the sampling device 900.

[0072] In some embodiments, a sliding door is provided at the opening 110 of the reaction chamber 100. The sliding door can close the opening 110 to prevent contamination from entering, and the sliding door is easy to open and close and has a small operating space.

[0073] In some embodiments, the exhaust device 300 may be an exhaust structure that meets EAC certification requirements. For example, the exhaust device 300 remains open throughout the sample preparation process.

[0074] In one possible implementation, when preparing a sample solution using the semiconductor process sample solution preparation system provided in this application, the gas purging device 200 introduces clean gas into the reaction chamber 100, and in conjunction with the exhaust device 300, performs a purging operation on the inside of the reaction chamber 100 to ensure that acidic gases are evacuated from the reaction chamber 100; the rinsing device 400 introduces rinsing liquid into the reaction chamber 100 to perform a rinsing operation on the inside of the reaction chamber 100 to ensure the cleanliness of the inside of the reaction chamber 100. The standard solution supply device 700 introduces standard solution into the standard solution loading device inside the reaction chamber 100. The flipping device 500 picks up the wafer 001 from the opening 110 on the reaction chamber 100 and conveys it to the lifting device 600. The lifting device 600 adjusts the height and / or level of the wafer 001 and brings the first surface of the wafer 001 into contact with the standard solution loaded in the standard solution loading device to etch the first surface of the wafer 001. When the etching of the first surface of the wafer 001 is completed, the lifting device 600 adjusts the height of the wafer 001 so that the wafer 001 is not in contact with the standard solution. The flipping device 500 flips the wafer 001 and places it on the lifting device 600, for example, the flipping angle can be 180°. The lifting device 600 adjusts the height and / or level of the wafer 001 and brings the second surface of the wafer 001 into contact with the standard solution loaded in the standard solution loading device to etch the second surface of the wafer 001. When the etching of the second surface of the wafer 001 is completed, the lifting device 600 adjusts the height of the wafer 001 so that the wafer 001 is not in contact with the standard solution, and the sample preparation is completed. Throughout the etching process, the lifting device 600 can precisely control the etching time of wafer 001. After sample preparation, the sampling device 900 can directly take samples from the standard solution loading device. After sampling, the rinsing device 400 introduces rinsing fluid into the reaction chamber 100 to rinse the interior of the reaction chamber 100, facilitating continuous sample preparation.

[0075] In some embodiments, the standard solution loading device includes a loading tray 800 for loading standard solutions. The dimensions of the opening and bottom of the loading tray 800 satisfy the following: when the wafer 001 is horizontally positioned, the surface of the wafer 001 facing the bottom of the loading tray 800 is allowed to contact the standard solution loaded in the loading tray 800.

[0076] In one possible implementation, the opening area of ​​the loading tray 800 is larger than the area of ​​the largest surface of the wafer 001, and the bottom area of ​​the loading tray 800 is larger than the area of ​​the largest surface of the wafer 001. It is understood that the wafer 001 has two opposing planes, namely a first surface and a second surface, and the side surface connecting the first and second surfaces has a smaller area than the area of ​​the first and second surfaces. When the wafer 001 is placed horizontally, the first and second surfaces of the wafer 001 are arranged vertically. The loading tray 800 can hold a standard solution of a certain depth to allow the entire surface of either the first or second surface of the wafer 001 to be in contact with the standard solution, which is beneficial for uniform etching of the entire surface. The lifting device 600, in conjunction with the flipping device 500, horizontally places the wafer 001 into the loading tray 800, ensuring that the first or second surface of the wafer 001 is in contact with the standard solution within the loading tray 800.

[0077] In one possible implementation, the opening area of ​​the loading tray 800 is larger than the area of ​​the largest surface of the wafer 001, and the bottom area of ​​the loading tray 800 is equal to the area of ​​the largest surface of the wafer 001. It is understood that the wafer 001 has two opposing planes, namely a first surface and a second surface, and the lateral area connecting the first and second surfaces is smaller than the area of ​​the first and second surfaces. When the wafer 001 is placed horizontally, the first and second surfaces of the wafer 001 are arranged vertically. The loading tray 800 can hold a standard solution of a certain depth, and the area of ​​the standard solution surface is larger than the area of ​​the first or second surface of the wafer 001, allowing the entire surface of the first or second surface of the wafer 001 to be in contact with the standard solution, which is beneficial for uniform etching of the entire surface. The lifting device 600, in conjunction with the flipping device 500, horizontally places the wafer 001 into the loading tray 800, ensuring that the first or second surface of the wafer 001 is in contact with the standard solution within the loading tray 800.

[0078] In one possible implementation, the opening area of ​​the loading tray 800 is larger than the area of ​​the largest surface of the wafer 001, and the bottom area of ​​the loading tray 800 is smaller than the area of ​​the largest surface of the wafer 001. It is understood that the wafer 001 has two opposing planes, namely a first surface and a second surface, and the area of ​​the side connecting the first and second surfaces is smaller than the area of ​​the first and second surfaces. When the wafer 001 is placed horizontally, the first and second surfaces of the wafer 001 are arranged vertically. The loading tray 800 can hold a standard solution of a certain depth, and the area of ​​the standard solution surface is larger than the area of ​​the first or second surface of the wafer 001, allowing the entire surface of the first or second surface of the wafer 001 to be in contact with the standard solution, which is beneficial for uniform etching of the entire surface. The lifting device 600, in conjunction with the flipping device 500, horizontally places the wafer 001 into the loading tray 800, ensuring that the first or second surface of the wafer 001 is in contact with the standard solution within the loading tray 800.

[0079] In some embodiments, the flipping device 500 includes a processor 510, a sensor 520, a transmission arm 530, and a vacuum pen 540 mounted on the transmission arm 530; the sensor 520, the transmission arm 530, and the vacuum pen 540 are all signal-connected to the processor 510; the sensor 520 is used to detect the height information of the wafer 001 from the bottom surface of the reaction chamber 100 and / or the horizontal information of the wafer 001, and sends the height information and / or the horizontal information to the processor 510; one end of the transmission arm 530 is mounted on the inner wall of the reaction chamber 100, and the other end is ball-jointed with the vacuum pen 540; the vacuum pen 540 is used to adsorb the wafer 001, and can transport and flip the wafer 001 under the drive of the transmission arm 530.

[0080] In one possible implementation, the flipping device 500 is located inside the reaction chamber 100, the transmission arm 530 is mounted on the inner wall of the reaction chamber 100, and the vacuum pen 540 is ball-jointed with the transmission arm 530, allowing the vacuum pen 540 to rotate 360° around its connection with the transmission arm 530. The vacuum pen 540 picks up the wafer 001 and, in conjunction with the movement of the transmission arm 530, realizes the transfer and flipping of the wafer 001. The sensor 520 detects in real time the height information of the wafer 001 from the bottom surface of the reaction chamber 100 and the level information of the wafer 001, and sends the height and level information to the processor 510. After receiving the height and level information sent by the sensor 520, the processor 510 controls the movement of the transmission arm 530 and the vacuum pen 540 to adjust the position of the wafer 001, ensuring that the wafer 001 can smoothly enter and exit the opening 110 of the reaction chamber 100.

[0081] In one possible implementation, the processor 510 is mounted on the inner wall of the reaction chamber 100. The processor 510 is also signal-connected to the lifting device 600. The processor 510 controls the lifting device 600 to adjust the height and / or level of the wafer 001 according to the height information and / or level information sent by the sensor 520, so that the wafer 001 is uniformly etched towards the entire surface of the standard solution carrier during etching.

[0082] In one possible implementation, sensor 520 is a height level sensor.

[0083] In some embodiments, the sensor 520 is disposed on the inner wall of the reaction chamber 100. In one possible implementation, the sensor 520 is disposed at a fixed position within the reaction chamber 100, and the height of the sensor 520 from the bottom surface of the reaction chamber 100 is a fixed value. When detecting the height information of the wafer 001 from the bottom surface of the reaction chamber 100, the height value of the wafer 001 can be converted into the height of the wafer 001 from the sensor 520 using a formula. For example, if the height value of the sensor 520 from the bottom surface of the reaction chamber 100 is H0, and the vertical distance of the wafer 001 from the sensor 520 is H1, then the height value H of the wafer 001 from the bottom surface of the reaction chamber 100 satisfies: H = H0 + H1. This conversion method is relatively simple and facilitates the detection of the height information of the wafer 001 from the bottom surface of the reaction chamber 100, but the detection method is not limited to this.

[0084] In some embodiments, the sensor 520 is disposed on the transmission arm 530. In one possible implementation, the sensor 520 is positioned within the reaction chamber 100 at a movable position. The height of the sensor 520 from the bottom surface of the reaction chamber 100 is a changing value. When detecting the height information of the wafer 001 from the bottom surface of the reaction chamber 100, the height value of the wafer 001 can also be converted into the height of the wafer 001 from the sensor 520 using a formula. For example, the height value of the sensor 520 from the bottom surface of the reaction chamber 100 is H0. ’ The vertical distance between wafer 001 and sensor 520 is H1. ’ The height H of wafer 001 from the bottom surface of reaction chamber 100 ’ Satisfy: H ’ =H0 ’ +H1 ’ The conversion method is relatively simple and facilitates the detection of the height information of the wafer 001 from the bottom surface of the reaction chamber 100, but the detection method is not limited to this.

[0085] In some embodiments, the transmission arm 530 includes a plurality of links, which are sequentially connected end-to-end.

[0086] In one possible implementation, refer to Figure 1 Sensor 520 is mounted on the inner wall of reaction chamber 100. Transmission arm 530 includes a first connecting rod, a second connecting rod, and a third connecting rod. One end of the first connecting rod is connected to sensor 520, and the other end is connected to the second connecting rod. The end of the second connecting rod away from the first connecting rod is connected to the third connecting rod. Vacuum pen 540 is ball-hinged at the end of the third connecting rod away from the first connecting rod, and vacuum pen 540 can rotate 360° around the hinge. For example, sensor 520 can detect the height and / or levelness of the wafer 001 adsorbed by vacuum pen 540 by real-time monitoring of the spatial displacement of vacuum pen 540.

[0087] In some embodiments, the flipping device 500 further includes a vacuum generator 550, which is disposed on the vacuum suction pen 540, or on the transmission arm 530. For example, the vacuum generator 550 is disposed on the third link.

[0088] In some embodiments, the vacuum pen includes a vacuum generator 550.

[0089] In some embodiments, the lifting device 600 includes a lifting rod controller 610, a drive mechanism 620, and a plurality of lifting rods 630 that are pulsatorically connected to the drive mechanism 620; the plurality of lifting rods 630 are disposed on the edge of the loading tray 800 and distributed circumferentially along the loading tray 800; the plurality of lifting rods 630 are coplanar with respect to the bottom surface of the reaction chamber 100 to carry the wafer 001; the drive mechanism 620 is signal-connected to the lifting rod controller 610 and is used to drive the plurality of lifting rods 630 to adjust the height and / or level of the wafer 001.

[0090] In one possible implementation, refer to Figure 1 The lifting device 600 includes a lifting rod controller 610 and a drive mechanism 620 located outside the reaction chamber 100, and three lifting rods 630 located inside the reaction chamber 100. All three lifting rods 630 are driveably connected to the drive mechanism 620. The lifting rod controller 610 is signal-connected to the processor 510 of the flipping device 500, and also signal-connected to the drive mechanism 620. When the wafer 001 is placed on the lifting rod 630 by the flipping device 500, the processor 510 determines whether the height and / or level of the wafer 001 needs to be adjusted based on the height and / or level information of the wafer 001 detected by the sensor 520, and sends a control signal to the lifting rod controller 610. The lifting rod controller 610 receives the control signal from the processor 510 and controls the drive mechanism 620 to drive the lifting rods 630 to perform corresponding actions.

[0091] It should be noted that multiple lifting rods 630 are disposed at the edge of the loading tray 800 and distributed circumferentially along the loading tray 800 to support the edge of the wafer 001. While providing sufficient support for the wafer 001, the placement of the lifting rods 630 at the edge of the loading tray 800 and their circumferential distribution minimizes the contact area between the lifting rods 630 and the wafer 001, improving the integrity of the etching on the surface of the wafer 001. Simultaneously, the multiple lifting rods 630 at the edge of the loading tray 800 reduce the opening size of the loading tray 800. When the standard solution is quantitative, the cross-section is smaller and the height increases; therefore, the opening size of the loading tray 800 decreases, and the liquid level of the quantitative standard solution in the loading tray 800 increases, facilitating etching on the surface of the wafer 001. For example, refer to... Figure 1 There are three lifting booms 630, and the three lifting booms 630 are arranged in a triangle and are distributed around the edge of the loading plate 800.

[0092] In one possible implementation, the drive mechanism 620 includes motors, each corresponding to a lifting rod 630 individually, allowing for individual control of the lifting rod 630 to adjust the level of the wafer 001. Multiple motors are signal-connected to the lifting rod controller 610 for unified control. The drive mechanism 620 can be located outside the reaction chamber.

[0093] It is understandable that the main function of the lifting rod 630 is to support the linear movement of the wafer 001. Therefore, any structure that can achieve this function can be called the lifting rod 630 in this embodiment.

[0094] In some embodiments, the gas purging device 200 includes a gas supply unit 210 and a first valve group. The first valve group is disposed on the pipeline between the gas supply unit 210 and the reaction chamber 100, and can precisely control the flow rate of clean gas to ensure the purging effect, thereby ensuring the cleanliness inside the reaction chamber 100.

[0095] In some embodiments, the first valve group includes a two-position two-way solenoid valve 220 and a first control valve 230. The two-position two-way solenoid valve 220 is used to control the flow rate of clean gas in the pipeline between the gas supply unit 210 and the reaction chamber 100; the first control valve 230 is used to control the opening and closing of the pipeline between the gas supply unit 210 and the reaction chamber 100.

[0096] In one possible implementation, a two-position, two-way solenoid valve 220 is disposed on the pipeline between the gas supply unit 210 and the reaction chamber 100, and a first control valve 230 is disposed on the pipeline between the two-position, two-way solenoid valve 220 and the reaction chamber 100. The two-position, two-way solenoid valve 220 can control the flow rate and time of clean gas such as nitrogen, and can achieve automated control; the two-position, two-way solenoid valve 220 and the first control valve 230 work together to ensure the safety of clean gas flow control in the pipeline. For example, when the two-position, two-way solenoid valve 220 has the function of controlling the on / off state of the pipeline, the first control valve 230 can also be omitted.

[0097] In some embodiments, the rinsing device 400 includes a rinsing fluid supply unit 410 and a second control valve 420. The second control valve 420 is disposed on the pipeline between the rinsing fluid supply unit 410 and the reaction chamber 100, and is used to control the on / off state of the pipeline. It can autonomously control the rinsing, thereby improving operational safety. During continuous sample preparation, the rinsing device 400 can automatically clean the carrier tray without manual cleaning, reducing background residue and improving operational safety.

[0098] In one possible implementation, the flushing fluid supply unit 410 is connected to the second control valve 420, and the flushing fluid outlet of the reaction chamber 100 is connected to the waste discharge pipeline and the waste liquid valve, so that the inside of the reaction chamber 100 is cleaned by continuous flushing.

[0099] In some embodiments, the rinsing solution can be ultrapure water (UPW), which contains almost no ions and does not affect the concentration of the sample solution.

[0100] In some embodiments, the standard solution supply device 700 includes a standard solution storage tank 710, a third control valve 720, a feed pump 730, and a feed controller 740. The third control valve 720, the feed pump 730, and the feed controller 740 are all disposed on the pipeline between the standard solution storage tank 710 and the reaction chamber 100. The third control valve 720 is used to control the opening and closing of the pipeline between the standard solution storage tank 710 and the reaction chamber 100. The feed controller 740 is signal-connected to the feed pump 730 and is used to control the total amount of standard solution entering the reaction chamber 100, accurately control the total amount of standard solution, ensure the accuracy of the sample solution concentration, and facilitate the consistency of control variables during continuous sample preparation.

[0101] In one possible implementation, a third control valve 720 is installed on the pipeline between the standard solution storage tank 710 and the reaction chamber 100, a feed pump 730 is installed on the pipeline between the third control valve 720 and the reaction chamber 100, and a feed controller 740 is installed on the pipeline between the feed pump 730 and the reaction chamber 100. The feed controller 740 is used to adjust the feed rate of the standard solution to ensure that a uniform mass of standard solution is used for etching each time a sample is prepared.

[0102] In some embodiments, the reaction chamber 100 has a plurality of standard solution inlets 120, which are arranged circumferentially along the reaction chamber 100, and are connected to the feed controller 740 and the standard solution loading device via pipelines.

[0103] In one possible implementation, refer to Figure 1 The reaction chamber 100 has four standard solution inlets 120, which are arranged circumferentially around the reaction chamber 100. Each standard solution inlet 120 is controlled by a feed controller 740 to ensure that the total amount of standard solution is quantitative. The four standard solution inlets 120 in different directions are used for etching the wafer 001 surface, resulting in more uniform etching and a reduction in etching time of 60-90 seconds.

[0104] In some embodiments, the sampling device 900 includes a sampling bottle 910 and a second valve assembly. The second valve assembly is located on the pipeline between the sampling bottle 910 and the standard solution loading device, and is situated outside the reaction chamber 100. It is used to control the flow of the pipeline, ensuring smooth sampling. By controlling the sampling through the second valve assembly, sample solution loss and standard solution splashing are avoided, reducing safety risks.

[0105] In some embodiments, the second valve group includes a three-way valve 920, a fourth control valve 930, and a fifth control valve 940. The first end of the three-way valve 920 is connected to the standard solution loading device via a pipeline, the second end is connected to the sampling bottle 910 via a pipeline, and the third end is connected to a waste discharge pipeline. The fourth control valve 930 is disposed on the pipeline between the three-way valve 920 and the sampling bottle 910, and the fifth control valve 940 is disposed on the waste discharge pipeline.

[0106] In one possible implementation, a three-way valve 920 is installed on the pipeline between the reaction chamber 100 and the sampling bottle 910, and is also connected to the waste discharge pipeline. The two outlet pipelines of the three-way valve 920 are respectively equipped with a fourth control valve 930 and a fifth control valve 940 to facilitate the control of sampling and waste discharge operations. Using the three-way valve 920 for sampling and waste discharge avoids the loss of sample solution and splashing of standard solution, thereby reducing safety risks.

[0107] In some embodiments, the system for preparing sample solutions in a semiconductor process further includes a processing unit 1000, which is signal-connected to a gas purging device 200 for controlling the gas purging device 200 to purge the interior of the reaction chamber 100; and / or, the processing unit 1000 is signal-connected to a rinsing device 400 for controlling the rinsing device 400 to rinse the interior of the reaction chamber 100; and / or, the processing unit 1000 is signal-connected to a flipping device 500 for controlling the flipping device 500 to adsorb, transport, and flip the wafer 001; and / or, the processing unit 1000 is signal-connected to a lifting device 600 for controlling the lifting device 600 to adjust the height and / or level of the wafer 001; and / or, the processing unit 1000 is signal-connected to a standard solution supply device 700 for controlling the standard solution supply device 700 to deliver a quantitative amount of standard solution into the reaction chamber 100; and / or, the processing unit 1000 is signal-connected to a sampling device 900 for controlling the sampling device 900 to automatically sample.

[0108] In one possible implementation, refer to Figure 2The processing unit 1000 is signal-connected to the two-position two-way solenoid valve 220 in the gas purging device 200, and controls the flow rate of clean gas supplied from the gas supply unit 210 into the reaction chamber 100 through the two-position two-way solenoid valve 220. The processing unit 1000 can also be signal-connected to the first control valve 230 in the gas purging device 200, and controls the opening and closing of the pipeline between the gas supply unit 210 and the reaction chamber 100 through the first control valve 230. The processing unit 1000 can also be signal-connected to the exhaust device 300. When it is necessary to purge the inside of the reaction chamber 100, the processing unit 1000 controls the exhaust device 300 to open, controls the two-position two-way solenoid valve 220 and the first control valve 230 to open, and the clean gas enters the reaction chamber 100 from the gas supply unit 210 through the two-position two-way solenoid valve 220 and the first control valve 230. The gas in the reaction chamber 100 is discharged by the exhaust device 300, realizing automatic purging of the reaction chamber 100 without manual intervention, improving safety and timeliness.

[0109] In one possible implementation, refer to Figure 2 The processing unit 1000 is signal-connected to the second control valve 420 of the rinsing device 400, and controls the opening and closing of the pipeline between the rinsing fluid supply unit 410 and the reaction chamber 100 through the second control valve 420. When it is necessary to rinse the inside of the reaction chamber 100, the processing unit 1000 controls the second control valve 420 to open, and the rinsing fluid enters the inside of the reaction chamber 100 from the rinsing fluid supply unit 410 through the second control valve 420 to perform the rinsing operation inside the reaction chamber 100. This realizes automatic rinsing inside the reaction chamber 100 without manual intervention. At the same time, automatic rinsing can be performed before and after sample preparation, which improves safety and timeliness and facilitates continuous sample preparation.

[0110] In one possible implementation, refer to Figure 2 The processing unit 1000 is signal-connected to the processor 510 in the flipping device 500, and the processing unit 1000 is also signal-connected to the lifting rod controller 610 in the lifting device 600. The processing unit 1000 controls the flipping device 500 and the lifting device 600 to cooperate in completing the adsorption, transfer, flipping and lifting of the wafer 001, as well as the horizontal adjustment of the wafer 001 on the lifting rod 630. The whole process does not require manual intervention, avoids the introduction of contamination, and reduces safety hazards.

[0111] In one possible implementation, refer to Figure 2 The processing unit 1000 is connected to the feed controller 740 in the standard solution supply device 700. The feed controller 740 is connected to the third control valve 720 and the feed pump 730. The processing unit 1000 controls the total amount and speed of the standard solution entering the loading tray 800 through the feed controller 740, which makes it less likely to cause solution splashing and reduces safety hazards.

[0112] In one possible implementation, refer to Figure 2 The processing unit 1000 is connected to the fourth control valve 930 and the fifth control valve 940 in the sampling device 900. The processing unit 1000 can automatically switch between sampling operation and waste discharge operation. The sampling process is less likely to cause sample solution splashing, reducing safety hazards.

[0113] In one possible implementation, refer to Figure 2 All devices throughout the process are connected to the processing unit 1000 for software control, ensuring that there is no risk of sample solution splashing or loss during sample preparation, thus greatly reducing safety risks.

[0114] In one possible implementation, the system for preparing sample solutions in the semiconductor process provided in this embodiment of the invention improves the safety and cleanliness of sample preparation by using a gas purging device 200, a rinsing device 400, a continuous exhaust device, and a vacuum pen 540 for wafer transfer and flipping within the reaction chamber 100; and by using a lifting rod controller 610 to control the automatic lifting position and level of the wafer 001 to ensure the uniformity of etching on the surface of the wafer 001. The recipe is written in software. A vacuum pen 540 adsorbs wafer 001, which is then transferred to a lifting rod 630 via a sensor 520. A feed controller 740 controls the amount of standard solution entering the standard solution tank 710. The standard solution is introduced into the reaction chamber 100 through four inlets in different directions. The lifting rod 630 automatically descends to the surface of the standard solution and begins uniform etching of wafer 001. After 60 seconds, the lifting rod 630 automatically rises, and the vacuum pen 540 flips wafer 001 onto the lifting rod 630. The lifting rod 630 then automatically descends to the surface of the standard solution and begins etching the other side of wafer 001. After 60 seconds, the lifting rod 630 automatically rises again, and a fourth control valve 930 opens, allowing the prepared sample to flow into a sample preparation bottle, completing the sample preparation process. The systematic and automated cleaning of the internal environment after sample preparation in semiconductor processes significantly improves operational safety.

[0115] According to some embodiments, a second aspect of this application provides a method for preparing a sample solution in a semiconductor process, which is executed by the system for preparing a sample solution in a semiconductor process provided in the first aspect of this application, with reference to... Figure 3 Specifically, it includes the following steps:

[0116] S301. Perform internal cleaning of the reaction chamber;

[0117] S302. The wafer is transferred to the lifting device via the flipping device, and the height of the wafer is adjusted to the first preset height via the lifting device.

[0118] S303. A quantitative standard solution is introduced into the standard solution loading device, and the liquid level is lower than the first preset height, with the bottom surface of the standard solution loading device as the reference.

[0119] S304. The wafer is adjusted to a horizontal position by means of a lifting device, and the height of the wafer is adjusted so that the first surface of the wafer comes into contact with the standard solution for etching of the first surface. The etching time is set to a first preset time.

[0120] S305. After the first surface etching is completed, the wafer is raised to the second preset height by the lifting device, and then the wafer is flipped 180° by the flipping device before being transferred to the lifting device.

[0121] S306. The wafer is adjusted to a horizontal position by the lifting device, and the height of the wafer is adjusted so that the second surface of the wafer is in contact with the standard solution for etching of the second surface. The etching time is set to a second preset time, wherein the first surface and the second surface are opposite to each other.

[0122] S307. After the second surface etching is completed, the wafer is raised to the third preset height using a lifting device;

[0123] S308. Take a sample of the sample solution prepared in the standard solution loading device.

[0124] The embodiments of this application have at least the following advantages:

[0125] Before sample preparation, the reaction chamber is internally cleaned to ensure its cleanliness. During sample preparation, the wafer is first transferred to a lifting device via a flipping device, which supports the wafer at a preset height. Then, a measured amount of standard solution is introduced into the standard solution loading device, preventing splashing. Before etching, the wafer remains above the liquid level in the standard solution loading device. When etching is required, the lifting device precisely controls the wafer's height and, in conjunction with the flipping device, flips the wafer to complete the etching of both opposite surfaces. When the etching time is up, the lifting device promptly raises the wafer, precisely controlling the etching time. After both surfaces of the wafer are etched, the prepared sample solution in the standard solution loading device is sampled. The entire sample preparation process is conducted without human contact, avoiding contamination and reducing safety hazards.

[0126] In some embodiments, the internal cleaning operation of the reaction chamber in S301 described above is referred to Figure 4 Specifically, it includes:

[0127] S401. Introduce clean gas into the reaction chamber to perform a purging operation;

[0128] S402. Pass the rinsing solution into the reaction chamber to perform the rinsing operation.

[0129] In one possible implementation, in S401 above, a gas purging device is used to introduce clean gas into the reaction chamber, and an exhaust device is used to exhaust the gas. The gas purging device works in conjunction with the exhaust device to perform the purging operation.

[0130] In one possible implementation, in the above S402, a flushing device is used to introduce flushing liquid into the reaction chamber, and flushing liquid is discharged in conjunction with the flushing liquid outlet at the bottom of the reaction chamber and the waste discharge pipeline connected to the sampling device.

[0131] It should be noted that the clean gas purging and rinsing with rinsing fluid inside the reaction chamber ensured the cleanliness of the reaction chamber and guaranteed the accuracy of sample preparation.

[0132] In some embodiments, after the second surface etching is completed in step S307 and the wafer is raised to a third preset height by a lifting device, the method further includes:

[0133] The wafer is picked up by a flipping device and transported to the outside of the reaction chamber.

[0134] In some embodiments, at least two of the first preset height, second preset height, and third preset height are the same, and the setting of the same height facilitates control.

[0135] In one possible implementation, the first preset height, the second preset height, and the third preset height are all equal, thereby allowing the lifting rod to switch between two fixed height values, making the control method simple.

[0136] In some embodiments, the first preset time and the second preset time are the same, and the etching time for the two opposite surfaces of the wafer is the same, ensuring that the etching degree of the two surfaces is the same and ensuring the accuracy of the sample. For example, both the first preset time and the second preset time are 60s.

[0137] In some embodiments, after sampling the sample solution prepared in the standard solution loading device in step S308 above, the method further includes:

[0138] The rinsing solution is introduced into the reaction chamber and the standard solution loading device to perform the rinsing operation.

[0139] In one possible implementation, a flushing device is used to introduce flushing fluid into the reaction chamber, and flushing fluid is discharged through the flushing fluid outlet at the bottom of the reaction chamber and the waste discharge pipeline connected to the sampling device.

[0140] It should be noted that rinsing the reaction chamber with a flushing solution after sampling enables continuous sample preparation, while eliminating the need for manual cleaning of the sampling pipeline, reducing background residue and improving operational safety.

[0141] To make the solutions provided in the embodiments of the present invention easier to understand, the sample preparation method provided in the embodiments of the present invention will be described in detail below through a specific example. For example... Figure 5 As shown, the process includes the following steps:

[0142] S501. Introduce clean gas into the reaction chamber to perform a purging operation;

[0143] S502. Pass the rinsing solution into the reaction chamber to perform the rinsing operation;

[0144] S503. The wafer is transferred to the lifting device via the flipping device, and the height of the wafer is adjusted to the first preset height via the lifting device.

[0145] S504. A quantitative standard solution is introduced into the standard solution loading device, and the liquid level is lower than the first preset height, with the bottom surface of the standard solution loading device as the reference.

[0146] S505. The wafer is adjusted to a horizontal position by the lifting device, and the height of the wafer is adjusted so that the first surface of the wafer is in contact with the standard solution for etching of the first surface. The etching time is set to 60s.

[0147] S506. After the first surface etching is completed, the wafer is raised to the second preset height by the lifting device, and then the wafer is flipped 180° by the flipping device before being transferred to the lifting device.

[0148] S507. The wafer is adjusted to a horizontal position by the lifting device, and the height of the wafer is adjusted so that the second surface of the wafer is in contact with the standard solution for etching of the second surface. The etching time is set to 60s, wherein the first surface and the second surface are opposite to each other.

[0149] S508. After the second surface etching is completed, the wafer is raised to the third preset height using a lifting device;

[0150] S509. The wafer is adsorbed by the flipping device and transferred to the outside of the reaction chamber;

[0151] S510. Take a sample of the sample solution prepared in the standard solution loading device;

[0152] S511. The rinsing solution is introduced into the interior of the reaction chamber and the standard solution loading device to perform the rinsing operation.

[0153] In one possible implementation, refer to Figures 6a-6c and combined Figure 1 Inside the reaction chamber 100, the transfer, flipping, lifting, and etching of wafer 001 are all performed without human contact, avoiding contamination, reducing safety hazards, and greatly improving operational safety. Specifically, Figure 6aThe middle part is a schematic diagram of the structure after the internal cleaning operation of the reaction chamber 100; Figure 6b The flipping device 500 picks up the wafer 001 from the opening 110 and transfers it to the lifting device 600, while the vacuum pen 540 in the flipping device 500 is in a non-working state. Figure 6c The middle part is a schematic diagram of the flipping device 500 flipping wafer 001 during the flipping process.

[0154] Obviously, those skilled in the art can make various modifications and variations to the embodiments of the present invention without departing from the spirit and scope of the invention. Therefore, if these modifications and variations fall within the scope of the claims of the present invention and their equivalents, the present invention also intends to include these modifications and variations.

Claims

1. A system for preparing sample solutions in semiconductor processes, characterized in that, include: The system includes a reaction chamber, a gas purging device, an exhaust device, a rinsing device, a tilting device, a lifting device, a standard solution supply device, a standard solution loading device, and a sampling device. The reaction chamber is connected to the gas purging device, the exhaust device, and the flushing device, respectively; The reaction chamber has an opening that serves as an inlet and outlet for transferring wafers. The standard solution loading device is located at the bottom of the reaction chamber and is connected to the standard solution supply device and the sampling device, respectively. It is used to receive the standard solution from the standard solution supply device and output the prepared sample solution to the sampling device. The flipping device is disposed inside the reaction chamber and is used to adsorb, transport and flip the wafer; The lifting device is used to receive the wafer from the flipping device and adjust the height and / or level of the wafer, so that the surface of the wafer comes into contact with the standard solution loaded in the standard solution loading device through cooperation with the flipping device.

2. The system according to claim 1, characterized in that, The standard solution loading device includes a loading tray for loading standard solutions. The dimensions of the opening and bottom of the loading tray satisfy the following condition: when the wafer is horizontally positioned, the surface of the wafer facing the bottom of the loading tray is allowed to contact the standard solution loaded in the loading tray.

3. The system according to claim 1, characterized in that, The flipping device includes a processor, a sensor, a transmission arm, and a vacuum suction pen mounted on the transmission arm; The sensor, the transmission arm, and the vacuum pen are all connected to the processor via signal. The sensor is used to detect the height information of the wafer from the bottom surface of the reaction chamber and / or the level information of the wafer, and sends the height information and / or the level information to the processor; One end of the transmission arm is installed on the inner wall of the reaction chamber, and the other end is connected to the vacuum pen ball joint; The vacuum pen is used to pick up the wafer and can transport and flip the wafer under the drive of the transmission arm.

4. The system according to claim 3, characterized in that, The sensor is disposed on the inner wall of the reaction chamber; or, The sensor is mounted on the transmission arm.

5. The system according to claim 3, characterized in that, The transmission arm includes multiple connecting rods, which are sequentially connected end-to-end.

6. The system according to claim 2, characterized in that, The lifting device includes a lifting rod controller, a drive mechanism, and multiple lifting rods that are drively connected to the drive mechanism. The plurality of lifting rods are disposed on the edge of the loading tray and distributed along the circumference of the loading tray; The plurality of lifting rods are coplanar with respect to the bottom surface of the reaction chamber in order to support the wafer; The drive mechanism is signal-connected to the lifting rod controller and is used to drive the plurality of lifting rods to adjust the height and / or level of the wafer.

7. The system according to claim 1, characterized in that, The gas purging device includes a gas supply unit and a first valve group, the first valve group being disposed on the pipeline between the gas supply unit and the reaction chamber.

8. The system according to claim 7, characterized in that, The first valve group includes a two-position two-way solenoid valve and a first control valve. The two-position two-way solenoid valve is used to control the flow rate of clean gas in the pipeline between the gas supply unit and the reaction chamber. The first control valve is used to control the opening and closing of the pipeline between the gas supply unit and the reaction chamber.

9. The system according to claim 1, characterized in that, The flushing device includes a flushing fluid supply unit and a second control valve. The second control valve is located on the pipeline between the flushing fluid supply unit and the reaction chamber and is used to control the opening and closing of the pipeline.

10. The system according to claim 1, characterized in that, The standard solution supply device includes a standard solution storage tank, a third control valve, a feed pump, and a feed controller. The third control valve, the feed pump, and the feed controller are all located on the pipeline between the standard solution storage tank and the reaction chamber. The third control valve is used to control the opening and closing of the pipeline between the standard solution storage tank and the reaction chamber. The feed controller is signal-connected to the feed pump and is used to control the total amount of standard solution entering the reaction chamber.

11. The system according to claim 10, characterized in that, The reaction chamber has multiple standard solution inlets, which are arranged circumferentially around the reaction chamber and are connected to the feed controller and the standard solution loading device via pipelines.

12. The system according to claim 1, characterized in that, The sampling device includes a sampling bottle and a second valve assembly. The second valve assembly is located on the pipeline between the sampling bottle and the standard solution loading device, and is located outside the reaction chamber, for controlling the opening and closing of the pipeline.

13. The system according to claim 12, characterized in that, The second valve group includes a three-way valve, a fourth control valve, and a fifth control valve. The first end of the three-way valve is connected to the standard solution loading device through a pipeline, the second end is connected to the sampling bottle through a pipeline, and the third end is connected to a waste discharge pipeline. The fourth control valve is located on the pipeline between the three-way valve and the sampling bottle, and the fifth control valve is located on the waste discharge pipeline.

14. The system according to claim 1, characterized in that, The system for preparing sample solutions in the semiconductor process further includes a processing unit, which is signal-connected to the gas purging device and used to control the gas purging device to purge the interior of the reaction chamber; and / or The processing unit is signal-connected to the flushing device and is used to control the flushing device to flush the inside of the reaction chamber; And / or, The processing unit is signal-connected to the flipping device and is used to control the flipping device to adsorb, transport, and flip the wafer; and / or, The processing unit is signal-connected to the lifting device and is used to control the lifting device to adjust the height and / or level of the wafer; and / or, The processing unit is signal-connected to the standard solution supply device and is used to control the standard solution supply device to deliver a quantitative amount of standard solution into the reaction chamber; and / or, The processing unit is signal-connected to the sampling device and is used to control the sampling device to automatically sample.

15. A method for preparing a sample solution in a semiconductor process, performed using the system described in any one of claims 1-14, characterized in that, include: Perform internal cleaning of the reaction chamber; The wafer is transferred to the lifting device via a flipping device, and the height of the wafer is adjusted to a first preset height via the lifting device. A quantitative standard solution is introduced into the standard solution loading device, and the liquid level is lower than the first preset height, with the bottom surface of the standard solution loading device as a reference. The wafer is adjusted to a horizontal position by the lifting device, and the height of the wafer is adjusted so that the first surface of the wafer comes into contact with the standard solution for first surface etching. The etching time is set to a first preset time. After the first surface etching is completed, the wafer is raised to a second preset height by the lifting device, and then the wafer is flipped 180° by the flipping device before being transferred to the lifting device. The wafer is adjusted to a horizontal position by the lifting device, and the height of the wafer is adjusted so that the second surface of the wafer comes into contact with the standard solution for second surface etching. The etching time is set to a second preset time, wherein the first surface is opposite to the second surface. After the second surface etching is completed, the wafer is raised to a third preset height using the lifting device. The sample solution prepared in the standard solution loading device is sampled.

16. The method according to claim 15, characterized in that, The internal cleaning of the reaction chamber includes: Clean gas is introduced into the reaction chamber to perform a purging operation; The rinsing solution is introduced into the reaction chamber to perform the rinsing operation.

17. The method according to claim 15, characterized in that, After the second surface etching is completed, the wafer is raised to a third preset height by the lifting device, and the process further includes: The wafer is adsorbed by the flipping device and transported to the outside of the reaction chamber.

18. The method according to claim 15, characterized in that, After sampling the sample solution prepared in the standard solution loading device, the process further includes: The rinsing solution is introduced into the interior of the reaction chamber and the standard solution loading device to perform the rinsing operation.

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