A semiconductor laser device provided with a topological phonon state layer

Abstract

The present invention provides a semiconductor laser device provided with a topological phonon state layer, which relates to the technical field of semiconductor optoelectronic devices. It sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top. A topological phonon state layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. Compared with the prior art, a topological phonon state layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The topological phonon state layer can adjust the topological phase transition of the topological quantum state and the phonon spectrum, change the quantum state and the lattice vibration mode, weaken the quantum-confined Stark effect, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, reduce the valence band offset of the laser device, improve the hole transport, enhance the confinement factor and electron leakage, reduce the internal loss, achieve continuous oscillation, lower the excitation threshold of the laser device, and improve the optical power and slope efficiency of the laser device.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and more particularly, to a semiconductor laser device provided with a topological phonon state layer. Background Art

[0002] Lasers are widely used in fields such as laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and various classification methods, mainly including solid-state, gas, liquid, semiconductor, and dye lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are significant differences between lasers and nitride semiconductor light-emitting diodes: 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, high brightness, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the mW level; 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect; 3) Light-emitting diodes undergo spontaneous transition radiation, which is incoherent light that jumps from a high energy level to a low energy level without external influence, while lasers are stimulated transition radiation, and the induced photon energy should be equal to the energy difference between the electron transitions, generating completely identical coherent light of photons and induced photons; 4) Different principles: Light-emitting diodes generate radiative recombination and light under the action of an external voltage, where electrons and holes jump to quantum wells or p-n junctions, while lasers require lasing conditions to be met, and must satisfy the condition of carrier population inversion distribution in the active region. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output. Nitride semiconductor lasers have the following problems: 1) Large internal lattice mismatch and large strain cause a strong polarization effect, and the strong QCSE (Quantum Confined Stark Effect) severely limits the improvement of the electrical lasing gain of lasers; 2) The Mg acceptor activation energy of p-type semiconductors is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, and the hole mobility is much smaller than the electron mobility, resulting in severe asymmetry and mismatch of electrons and holes in the quantum well, electron leakage and carrier delocalization, making it more difficult for holes to transport in the quantum well, uneven carrier injection, uneven gain, broadening of the laser gain spectrum, and a decrease in peak gain. 3) The valence band offset of the laser increases, making it more difficult for holes to transport in the quantum well, uneven carrier injection, and uneven gain. Summary of the Invention

[0003] The object of the present invention is to provide a semiconductor laser element provided with a topological phonon state layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser element provided with a topological phonon state layer includes, from bottom to top in sequence, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A topological phonon state layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer.

[0005] As a preferred technical solution of the present invention, the topological phonon state layer is a two-dimensional topological superlattice structure of any one or any combination of BaTiO3, BAs, PbTiO3, FAPbI3, CsPbI3, and Bi2O2Se.

[0006] As a preferred technical solution of the present invention, any combination of the topological phonon state layers includes the following two-dimensional topological superlattice structures of binary combinations: BaTiO3 / BAs, BaTiO3 / PbTiO3, BaTiO3 / FAPbI3, BaTiO3 / CsPbI3, BaTiO3 / Bi2O2Se, BAs / PbTiO3, BAs / FAPbI3, BAs / CsPbI3, BAs / Bi2O2Se, PbTiO3 / FAPbI3, PbTiO3 / CsPbI3, PbTiO3 / Bi2O2Se, FAPbI3 / CsPbI3, FAPbI3 / Bi2O2Se, CsPbI3 / Bi2O2Se.

[0007] As a preferred technical solution of the present invention, any combination of the topological phonon state layers includes the following two-dimensional topological superlattice structures of ternary combinations: BaTiO3 / BAs / PbTiO3, BaTiO3 / BAs / FAPbI3, BaTiO3 / BAs / CsPbI3, BaTiO3 / BAs / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3, BaTiO3 / PbTiO3 / CsPbI3, BaTiO3 / PbTiO3 / Bi2O2Se, BaTiO3 / FAPbI3 / CsPbI3, BaTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3, BAs / PbTiO3 / CsPbI3, BAs / PbTiO3 / Bi2O2Se, BAs / FAPbI3 / CsPbI3, BAs / FAPbI3 / Bi2O2Se, BAs / CsPbI3 / Bi2O2Se, PbTiO3 / FAPbI3 / CsPbI3, PbTiO3 / FAPbI3 / Bi2O2Se, PbTiO3 / CsPbI3 / Bi2O2Se, FAPbI3 / CsPbI3 / Bi2O2Se.

[0008] As a preferred technical solution of the present invention, any combination of the topological phonon state layers includes the following two-dimensional topological superlattice structures of quaternary combinations: BaTiO3 / BAs / PbTiO3 / FAPbI3, BaTiO3 / BAs / PbTiO3 / CsPbI3, BaTiO3 / BAs / PbTiO3 / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3 / CsPbI3, BaTiO3 / PbTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3 / CsPbI3, BAs / PbTiO3 / FAPbI3 / Bi2O2Se, BAs / FAPbI3 / CsPbI3 / Bi2O2Se, PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se.

[0009] As a preferred technical solution of the present invention, any combination of the topological phonon state layers includes the following two-dimensional topological superlattice structures of five-element and six-element combinations: BaTiO3 / BAs / PbTiO3 / FAPbI3 / CsPbI3, BaTiO3 / BAs / PbTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / BAs / PbTiO3 / CsPbI3 / Bi2O2Se, BaTiO3 / BAs / FAPbI3 / CsPbI3 / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BaTiO3 / BAs / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se.

[0010] As a preferred technical solution of the present invention, a topological phonon state layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer. The topological phonon state layer can tune the topological phase transition of the topological quantum state and the phonon spectrum, change the quantum state and the lattice vibration mode, weaken the quantum-confined Stark effect, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, enhance the confinement factor, reduce the internal loss, achieve continuous oscillation, lower the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element.

[0011] As a preferred technical solution of the present invention, the thickness of the topological phonon state layer 107 is 5 - 500 nm.

[0012] As a preferred technical solution of the present invention, the lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ; the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3 ; the electron blocking layer and the upper confinement layer are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 - 1000 nm and an Mg doping concentration of 1E18 - 1E20 cm -3 .

[0013] As a preferred technical solution of the present invention, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0015] In the solution of the present invention:

[0016] Compared with the prior art, a topological phonon state layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer, which can adjust the topological phase transition of the topological quantum state and phonon spectrum, change the quantum state and lattice vibration mode, weaken the quantum-confined Stark effect, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, enhance the confinement factor, reduce the internal loss, achieve continuous oscillation, lower the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. is a schematic structural diagram of a semiconductor laser element provided with a topological phonon state layer according to the present invention.

[0018] The labels in the figure are as follows:

[0019] 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer, 105: Electron blocking layer, 106: Upper confinement layer, 107: Topological phonon state layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention.

[0021] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the claimed invention, but merely represents some embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0022] It should be noted that, without conflict, the embodiments in the present invention and the features and technical solutions in the embodiments may be combined with each other.

[0023] Embodiment 1

[0024] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a topological phonon state layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0025] The topological phonon state layer 107 is a two-dimensional topological superlattice structure of any one of BaTiO3, BAs, PbTiO3, FAPbI3, CsPbI3, and Bi2O2Se.

[0026] A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The topological phonon state layer 107 can adjust the topological phase transition of the topological quantum state and the phonon spectrum, change the quantum state and the lattice vibration mode, weaken the quantum-confined Stark effect, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, enhance the confinement factor, reduce the internal loss, achieve continuous oscillation, lower the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element.

[0027] The thickness of the topological phonon state layer 107 is 5 - 500 nm.

[0028] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ; the lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3 ; the electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 - 1000 nm and an Mg doping concentration of 1E18 - 1E20 cm -3 .

[0029] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0030] Example 2

[0031] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a topological phonon state layer. A semiconductor laser element provided with a topological phonon state layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0032] A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The topological phonon state layer 107 can adjust the topological phase transition of the topological quantum state and the phonon spectrum, change the quantum state and the lattice vibration mode, weaken the quantum-confined Stark effect, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, enhance the confinement factor, reduce the internal loss, achieve continuous oscillation, lower the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element.

[0033] The thickness of the topological phonon state layer 107 is 5 - 500 nm.

[0034] Any combination of the topological phonon state layers includes the following two-dimensional topological superlattice structures of binary combinations: BaTiO3 / BAs, BaTiO3 / PbTiO3, BaTiO3 / FAPbI3, BaTiO3 / CsPbI3, BaTiO3 / Bi2O2Se, BAs / PbTiO3, BAs / FAPbI3, BAs / CsPbI3, BAs / Bi2O2Se, PbTiO3 / FAPbI3, PbTiO3 / CsPbI3, PbTiO3 / Bi2O2Se, FAPbI3 / CsPbI3, FAPbI3 / Bi2O2Se, CsPbI3 / Bi2O2Se.

[0035] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ; The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3; The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 to 1000 nm and an Mg doping concentration of 1E18 to 1E20 cm -3 .

[0036] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0037] Example 3

[0038] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser element provided with a topological phonon state layer, a semiconductor laser element provided with a topological phonon state layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 from bottom to top. A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0039] A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The topological phonon state layer 107 can adjust the topological phase transition of the topological quantum state and the phonon spectrum, change the quantum state and the lattice vibration mode, weaken the quantum-confined Stark effect, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, enhance the confinement factor, reduce the internal loss, achieve continuous oscillation, lower the excitation threshold of the laser element, and improve the optical power and slope efficiency of the laser element.

[0040] The thickness of the topological phonon state layer 107 is 5 to 500 nm.

[0041] Any combination of the topological phonon state layer 107 includes the following two-dimensional topological superlattice structures of ternary combinations: BaTiO3 / BAs / PbTiO3, BaTiO3 / BAs / FAPbI3, BaTiO3 / BAs / CsPbI3, BaTiO3 / BAs / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3, BaTiO3 / PbTiO3 / CsPbI3, BaTiO3 / PbTiO3 / Bi2O2Se, BaTiO3 / FAPbI3 / CsPbI3, BaTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3, BAs / PbTiO3 / CsPbI3, BAs / PbTiO3 / Bi2O2Se, BAs / FAPbI3 / CsPbI3, BAs / FAPbI3 / Bi2O2Se, BAs / CsPbI3 / Bi2O2Se, PbTiO3 / FAPbI3 / CsPbI3, PbTiO3 / FAPbI3 / Bi2O2Se, PbTiO3 / CsPbI3 / Bi2O2Se, FAPbI3 / CsPbI3 / Bi2O2Se.

[0042] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ; The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3 ; The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 - 1000 nm and an Mg doping concentration of 1E18 - 1E20 cm -3 .

[0043] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0044] Example 4

[0045] Please refer toFigure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a topological phonon state layer. The semiconductor laser device provided with a topological phonon state layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0046] A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The topological phonon state layer 107 can tune the topological phase transition of the topological quantum state and the phonon spectrum, change the quantum state and the lattice vibration mode, weaken the quantum-confined Stark effect, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, enhance the confinement factor, reduce the internal loss, achieve continuous oscillation, lower the excitation threshold of the laser device, and improve the optical power and slope efficiency of the laser device.

[0047] The thickness of the topological phonon state layer 107 is 5 - 500 nm.

[0048] Any combination of the topological phonon state layer 107 includes the following two-dimensional topological superlattice structures of four-element combinations: BaTiO3 / BAs / PbTiO3 / FAPbI3, BaTiO3 / BAs / PbTiO3 / CsPbI3, BaTiO3 / BAs / PbTiO3 / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3 / CsPbI3, BaTiO3 / PbTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3 / CsPbI3, BAs / PbTiO3 / FAPbI3 / Bi2O2Se, BAs / FAPbI3 / CsPbI3 / Bi2O2Se, PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se2.

[0049] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ; the lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3; The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 to 1000 nm and an Mg doping concentration of 1E18 to 1E20 cm -3 .

[0050] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0051] Example 5

[0052] Please refer to Figure 1 , this embodiment provides a technical solution: a semiconductor laser device provided with a topological phonon state layer. A semiconductor laser device provided with a topological phonon state layer includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.

[0053] A topological phonon state layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102. The topological phonon state layer 107 can tune the topological phase transition of the topological quantum state and the phonon spectrum, change the quantum state and the lattice vibration mode, weaken the quantum-confined Stark effect, enhance the radiative recombination efficiency of the electron-hole wave function in the active layer, enhance the confinement factor, reduce the internal loss, achieve continuous oscillation, lower the excitation threshold of the laser device, and improve the optical power and slope efficiency of the laser device.

[0054] The thickness of the topological phonon state layer 107 is 5 to 500 nm.

[0055] Any combination of the topological phonon state layer 107 includes the following two-dimensional topological superlattice structures of five-element and six-element combinations: BaTiO3 / BAs / PbTiO3 / FAPbI3 / CsPbI3, BaTiO3 / BAs / PbTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / BAs / PbTiO3 / CsPbI3 / Bi2O2Se, BaTiO3 / BAs / FAPbI3 / CsPbI3 / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BaTiO3 / BAs / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se.

[0056] The lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 - 5000 nm and an Si doping concentration of 1E18 - 1E20 cm -3 ; The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 - 1000 nm and an Si doping concentration of 1E16 - 5E19 cm -3 ; The electron blocking layer 105 and the upper confinement layer 106 are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 - 1000 nm and an Mg doping concentration of 1E18 - 1E20 cm -3 .

[0057] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0058] Experimental Example 1:

[0059] The green laser experiment was carried out using the technical solution in Example 1, and the topological phonon state layer was experimentally tested with BaTiO3;

[0060] Experimental Example 2:

[0061] The green laser experiment was carried out using the technical solution in Example 2, and the topological phonon state layer was experimentally tested with BaTiO3 / BAs4;

[0062] Experimental Example 3:

[0063] The technical solution in Example 3 was adopted to conduct experiments on green lasers. BaTiO3 / BAs / PbTiO3 was used for the experiment on the topological phonon state layer;

[0064] Experimental Example 4:

[0065] The technical solution in Example 4 was adopted to conduct experiments on green lasers. BaTiO3 / BAs / PbTiO3 / FAPbI3 was used for the experiment on the topological phonon state layer;

[0066] Experimental Example 5:

[0067] The technical solution in Example 5 was adopted to conduct experiments on green lasers. BaTiO3 / BAs / PbTiO3 / FAPbI3 / CsPbI3 was used for the experiment on the topological phonon state layer;

[0068] The data of Experimental Examples 1 - 5 are as follows:

[0069]

[0070] The comparison data of the average values of the data of Experimental Examples 1 - 5 with traditional laser elements are as follows:

[0071]

[0072] The slope efficiency of the green laser element increased from 0.31 / A to 0.72 W / A, a 132% increase; the threshold current density decreased from 3.5 kA / cm 2 to 1.2 kA / cm 2 , a 66% decrease, the optical power increased from 0.43 W to 0.94 W, a 119% increase; the confinement factor increased from 1.60% to 2.10%, a 31% increase, and the internal optical loss decreased from 35.2 cm -1 to 12.1 cm -1 , a 66% decrease.

[0073] Compared with the prior art, a topological phonon state layer is provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer, enabling adjustable topological phase transitions of topological quantum states and phonon spectra, changing quantum states and lattice vibration modes, weakening the quantum-confined Stark effect, enhancing the radiative recombination efficiency of electron-hole wave functions in the active layer, enhancing the confinement factor, reducing internal losses, achieving continuous oscillation, reducing the excitation threshold of the laser element, and increasing the optical power and slope efficiency of the laser element.

[0074] The above embodiments are only used to illustrate the present invention and do not limit the technical solutions described in the present invention. Although the present specification has described the present invention in detail with reference to the above respective embodiments, the present invention is not limited to the above specific embodiments. Therefore, any modification or equivalent replacement of the present invention; and all technical solutions and their improvements that do not depart from the spirit and scope of the invention are covered by the scope of the claims of the present invention.

Claims

1. A semiconductor laser device provided with a topological phonon state layer, which sequentially includes a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106) from bottom to top, and is characterized in that: A topological phonon state layer (107) is provided between the active layer (103) and the upper waveguide layer (104) and between the active layer (103) and the lower waveguide layer (102); the lower waveguide layer (102) and the upper waveguide layer (104) are any one or any combination of GaN, InGaN, and AlInGaN, and the topological phonon state layer (107) is a two-dimensional topological superlattice structure of any one or any combination of BaTiO3, BAs, PbTiO3, FAPbI3, CsPbI3, and Bi2O2Se; the active layer (103) is a periodic structure composed of well layers and barrier layers, the number of periods is m, 3≥m≥1, the well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 80 angstroms, and the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 120 angstroms.

2. The semiconductor laser device provided with a topological phonon state layer according to claim 1, characterized in that, Any combination of the topological phonon state layer (107) includes the following two-dimensional topological superlattice structures of binary combinations: BaTiO3 / BAs, BaTiO3 / PbTiO3, BaTiO3 / FAPbI3, BaTiO3 / CsPbI3, BaTiO3 / Bi2O2Se, BAs / PbTiO3, BAs / FAPbI3, BAs / CsPbI3, BAs / Bi2O2Se, PbTiO3 / FAPbI3, PbTiO3 / CsPbI3, PbTiO3 / Bi2O2Se, FAPbI3 / CsPbI3, FAPbI3 / Bi2O2Se, CsPbI3 / Bi2O2Se.

3. The semiconductor laser device provided with a topological phonon state layer according to claim 1, characterized in that, Any combination of the topological phonon state layers (107) includes the following two-dimensional topological superlattice structures in ternary combinations: BaTiO3 / BAs / PbTiO3, BaTiO3 / BAs / FAPbI3, BaTiO3 / BAs / CsPbI3, BaTiO3 / BAs / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3, BaTiO3 / PbTiO3 / CsPbI3, BaTiO3 / PbTiO3 / Bi2O2Se, BaTiO3 / FAPbI3 / CsPbI3, BaTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3, BAs / PbTiO3 / CsPbI3, BAs / PbTiO3 / Bi2O2Se, BAs / FAPbI3 / CsPbI3, BAs / FAPbI3 / Bi2O2Se, BAs / CsPbI3 / Bi2O2Se, PbTiO3 / FAPbI3 / CsPbI3, PbTiO3 / FAPbI3 / Bi2O2Se, PbTiO3 / CsPbI3 / Bi2O2Se, FAPbI3 / CsPbI3 / Bi2O2Se.

4. The semiconductor laser device provided with a topological phonon state layer according to claim 1, characterized in that, Any combination of the topological phonon state layers (107) includes the following two-dimensional topological superlattice structures in quaternary combinations: BaTiO3 / BAs / PbTiO3 / FAPbI3, BaTiO3 / BAs / PbTiO3 / CsPbI3, BaTiO3 / BAs / PbTiO3 / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3 / CsPbI3, BaTiO3 / PbTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3 / CsPbI3, BAs / PbTiO3 / FAPbI3 / Bi2O2Se, BAs / FAPbI3 / CsPbI3 / Bi2O2Se, PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se.

5. The semiconductor laser device provided with a topological phonon state layer according to claim 1, characterized in that, Any combination of the topological phonon state layer (107) includes the following two-dimensional topological superlattice structures of five - element and six - element combinations: BaTiO3 / BAs / PbTiO3 / FAPbI3 / CsPbI3, BaTiO3 / BAs / PbTiO3 / FAPbI3 / Bi2O2Se, BaTiO3 / BAs / PbTiO3 / CsPbI3 / Bi2O2Se, BaTiO3 / BAs / FAPbI3 / CsPbI3 / Bi2O2Se, BaTiO3 / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BAs / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se, BaTiO3 / BAs / PbTiO3 / FAPbI3 / CsPbI3 / Bi2O2Se.

6. The semiconductor laser device provided with a topological phonon state layer according to claim 1, characterized in that, The topological phase transition of the adjustable topological quantum state and phonon spectrum in the topological phonon state layer (107) changes the quantum state and lattice vibration mode, weakens the quantum confinement Stark effect, enhances the radiative recombination efficiency of the electron - hole wave function in the active layer, enhances the confinement factor, reduces the internal loss, realizes continuous oscillation, reduces the excitation threshold of the laser element, and improves the optical power and slope efficiency of the laser element.

7. The semiconductor laser device provided with a topological phonon state layer according to claim 1, characterized in that, The thickness of the topological phonon state layer (107) is 5 - 500 nm.

8. The semiconductor laser device provided with a topological phonon state layer according to claim 1, characterized in that, The lower confinement layer (101) is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 to 5000 nm and an Si doping concentration of 1E18 to 1E20 cm -3 ; the lower waveguide layer (102) and the upper waveguide layer (104) have a thickness of 50 to 1000 nm and an Si doping concentration of 1E16 to 5E19 cm -3 ; the electron blocking layer (105) and the upper confinement layer (106) are any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 to 1000 nm and an Mg doping concentration of 1E18 to 1E20 cm -3 .

9. The semiconductor laser device provided with a topological phonon state layer according to claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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