A semiconductor laser

Abstract

The application provides a semiconductor laser, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer; the active layer is a periodic structure composed of a well layer and a barrier layer; the refractive index coefficient of the well layer is greater than that of the barrier layer; the dielectric constant of the well layer is greater than that of the barrier layer; and the piezoelectric polarization coefficient of the well layer is greater than that of the barrier layer. The application differentiates the refractive index coefficient, the dielectric constant and the piezoelectric polarization coefficient of the well layer and the barrier layer in the active layer, thereby improving the photon degeneracy, making the stimulated radiation of the laser greater than the spontaneous radiation, improving the coherence, the limiting factor and the slope efficiency of the transverse mode, reducing the number of longitudinal modes and the mode variation, improving the time coherence of the longitudinal mode and the far field FFP image quality, the beam quality factor and the focusing spot resolution.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices, and more particularly to a semiconductor laser. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] Lasers and nitride semiconductor light-emitting diodes (LEDs) differ significantly:

[0004] 1) Lasers are generated by stimulated emission of charge carriers. They have a small half-width at half-maximum and very high brightness. The output power of a single laser can be in the W range. In contrast, nitride semiconductor light-emitting diodes are generated by spontaneous emission. The output power of a single light-emitting diode is in the mW range.

[0005] 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes. This results in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect.

[0006] 3) Light-emitting diodes emit spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, lasers emit stimulated transition radiation, where the energy of the induced photon should be equal to the energy difference of the electron transition, producing coherent light that is identical to the induced photon.

[0007] 4) Different principles: Light emission diodes emit light by electrons and holes jumping to the active layer or pn junction under the action of external voltage to generate radiative recombination, while lasers require certain lasing conditions to be met before they can emit light. This requires the carriers in the active region to be reversed, the stimulated emission light to oscillate back and forth in the resonant cavity, and the propagation in the gain medium to amplify the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] Nitride semiconductor lasers have the following problems: Fewer laser modes are more conducive to stimulated emission, improving photon degeneracy and making stimulated emission exceed spontaneous emission. Fabry-Perot optical resonators can reduce the laser mode number. A standing wave along the cavity axis is called a longitudinal mode; a transverse mode is the transverse distribution of the optical field along the cavity direction. When light reflects back and forth between two mirrors, and the equiphase surface of the light wave has the same radius of curvature as the mirror, a transverse mode with a transversely unchanged optical field is formed. The laser wave pattern can be divided into transverse modes and longitudinal / transverse modes. The intensity distribution of transverse modes in the cross-section perpendicular to the optical axis is determined by the waveguide structure of the semiconductor laser. If the transverse modes are complex and unstable, the output light coherence is poor. Longitudinal modes are distributed as standing waves in the propagation direction of the resonator. If many longitudinal modes are simultaneously emitted or there are inter-mode variations, high temporal coherence cannot be obtained, resulting in poor far-field image (FFP) quality. Summary of the Invention

[0009] To address one of the aforementioned technical problems, the present invention provides a semiconductor laser.

[0010] This invention provides a semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. The active layer is a periodic structure composed of a well layer and a barrier layer. The refractive index coefficient of the active layer well layer is greater than that of the barrier layer, the dielectric constant of the active layer well layer is greater than that of the barrier layer, and the piezoelectric polarization coefficient of the active layer well layer is greater than that of the barrier layer.

[0011] Preferably, the period of the active layer is m: 1≤m≤3, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlGaN, with a thickness of p: 5≤p≤100 angstroms and an emission wavelength of 200nm to 600nm, and the barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of q: 10≤q≤200 angstroms.

[0012] Preferably, the period of the active layer is s: 1≤s≤10, the well layer of the active layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, the thickness is t: 5≤t≤100 angstroms, the emission wavelength is 500nm to 2000nm, and the barrier layer of the active layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, the thickness is u: 10≤u≤200 angstroms.

[0013] Preferably, the active layer includes a first sub-active layer and a second sub-active layer. The In / O element distribution of the first sub-active layer is W-shaped, and the In / O element distribution of the second sub-active layer is M-shaped. The refractive index coefficient of the first sub-active layer is W-shaped, and the refractive index coefficient of the second sub-active layer is M-shaped. The dielectric constant of the first sub-active layer is W-shaped, and the dielectric constant of the second sub-active layer is M-shaped. The piezoelectric polarization coefficient of the first sub-active layer is W-shaped, and the piezoelectric polarization coefficient of the second sub-active layer is M-shaped.

[0014] Preferably, the refractive index coefficients of the first sub-active layer and the second sub-active layer are related as follows:

[0015] 2.0≤ refractive index coefficient b of the first sub-active layer barrier layer < refractive index coefficient d of the second sub-active layer barrier layer < refractive index coefficient a of the first sub-active layer well layer < refractive index coefficient c of the second sub-active layer well layer ≤ 3.0.

[0016] Preferably, the dielectric constant relationship between the first sub-active layer and the second sub-active layer is as follows:

[0017] 8≤dielectric constant f of the first sub-active layer barrier <dielectric constant h of the second sub-active layer barrier <dielectric constant e of the first sub-active layer well <dielectric constant g of the second sub-active layer well ≤12.

[0018] Preferably, the relationship between the piezoelectric polarization coefficients of the first sub-active layer and the second sub-active layer is as follows:

[0019] 0.7≤ piezoelectric polarization coefficient j of the first sub-active layer barrier layer<piezoelectric polarization coefficient l of the second sub-active layer barrier layer<piezoelectric polarization coefficient i of the first sub-active layer well layer<piezoelectric polarization coefficient k of the second sub-active layer well layer ≤ 1.0.

[0020] Preferably, the lower waveguide layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of x: 10 ≤ x ≤ 9000 Å; the upper waveguide layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of y: 10 ≤ y ≤ 9000 Å; the lower confinement layer is any one or any combination of AlInGaN, AlInN, AlGaN, InN, InGaN, and GaN, with a thickness of z: 10 ≤ z ≤ 90000 Å; and the upper confinement layer and the electron blocking layer are any one or any combination of AlInGaN, AlInN, AlGaN, InGaN, and GaN, with a thickness of n: 10 ≤ n ≤ 80000 Å.

[0021] Preferably, the lower waveguide layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness v: 10 ≤ v ≤ 9000 angstroms; the upper waveguide layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness w: 10 ≤ w ≤ 9000 angstroms; The lower confinement layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness r: 10 ≤ r ≤ 90000 angstroms; the upper confinement layer and the electron blocking layer are any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness g: 10 ≤ g ≤ 80000 angstroms.

[0022] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, or sapphire / SiN composite substrate. x Any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, spinel, ZrB2, LiAlO2 and LiGaO2.

[0023] The beneficial effects of this invention are as follows: Based on traditional semiconductor lasers, this invention differentiates the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the well layer and barrier layer in the active layer, thereby improving photon degeneracy, making stimulated emission of the laser greater than spontaneous emission, improving transverse mode coherence, confinement factor, and slope efficiency, and reducing the number of longitudinal modes and intermodal variations, thereby improving longitudinal mode temporal coherence and far-field FFP image quality, beam quality factor, and focused spot resolution. Attached Figure Description

[0024] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0025] Figure 1 This is a schematic diagram of the semiconductor laser described in Embodiment 1 of the present invention;

[0026] Figure 2 This is a schematic diagram of the semiconductor laser described in Embodiment 2 of the present invention;

[0027] Figure 3 The structure of the semiconductor laser described in Embodiment 2 of this invention is shown in the SIMS secondary ion mass spectrum.

[0028] Figure 4 This is a SIMS secondary ion mass spectrum of a partial structure of the semiconductor laser described in Embodiment 2 of the present invention;

[0029] Figure 5 This is a transmission electron microscope (TEM) image of the lower waveguide layer of the semiconductor laser described in Embodiment 2 of the present invention.

[0030] Figure 6 This is a transmission electron microscope (TEM) image of the active layer of the semiconductor laser described in Embodiment 2 of the present invention.

[0031] Figure 7 This is a transmission electron microscope (TEM) image of the upper waveguide layer of the semiconductor laser described in Embodiment 2 of the present invention.

[0032] Figure 8 This is a transmission electron microscope (TEM) image of the electron blocking layer of the semiconductor laser described in Embodiment 2 of the present invention.

[0033] Figure 9 This is a transmission electron microscope (TEM) image of the upper confinement layer of the semiconductor laser described in Embodiment 2 of the present invention.

[0034] Figure label:

[0035] 100. Substrate; 101. Lower confinement layer; 102. Lower waveguide layer; 103. Active layer; 104. Upper waveguide layer; 105. Electron blocking layer; 106. Upper confinement layer.

[0036] 103a, First Sub-Active Layer; 103b, Second Sub-Active Layer. Detailed Implementation

[0037] To make the technical solutions and advantages of the embodiments of this application clearer, the exemplary embodiments of this application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not an exhaustive list of all embodiments. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0038] Example 1

[0039] like Figure 1 As shown, this embodiment proposes a semiconductor laser, which includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 arranged sequentially from bottom to top.

[0040] Specifically, in this embodiment, the active layer 103 is a periodic structure composed of a well layer and a barrier layer. Both the well layer and the barrier layer possess refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient characteristics. Furthermore, the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient can affect the operating efficiency of the semiconductor laser.

[0041] The refractive index is the ratio of the speed of light in a vacuum to the speed of light in the medium. The higher the refractive index of a material, the stronger its ability to refract incident light.

[0042] The dielectric constant is a physical quantity that represents the energy generated when a portion of the charge in a crystalline material is held by an electric field. It is linearly related to the strength of the electric field and is the dielectric constant that determines the change in potential inside an object when a bias current is generated in an electric field.

[0043] Piezoelectric polarization refers to the phenomenon where certain dielectrics deform under the influence of an external force in a specific direction, resulting in internal polarization and the appearance of opposite charges on their two opposing surfaces. When the external force is removed, the dielectric returns to its uncharged state; this phenomenon is called the direct piezoelectric effect. When the direction of the force changes, the polarity of the charges also changes. Conversely, when an electric field is applied along the polarization direction of the dielectric, it deforms; when the electric field is removed, the deformation disappears; this phenomenon is called the inverse piezoelectric effect.

[0044] Based on the characteristics of refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient, this embodiment differentiates the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the well layer and barrier layer in the active layer 103 to improve the working efficiency of the semiconductor laser.

[0045] Specifically, in the active layer 103 of the semiconductor laser in this embodiment, the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the well layer and the barrier layer are defined respectively:

[0046] Refractive index coefficient: The refractive index coefficient of the well layer is greater than that of the barrier layer;

[0047] Dielectric constant: The dielectric constant of the well layer is greater than that of the barrier layer;

[0048] Piezoresistive coefficient: The piezoelectric coefficient of the well layer is greater than that of the barrier layer.

[0049] More specifically, in order to further improve the working efficiency of the semiconductor laser, this embodiment further limits the range of values ​​for the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the well layer and barrier layer in the active layer 103, as follows:

[0050] Refractive index coefficient: 2.0 ≤ refractive index coefficient of barrier layer < refractive index coefficient of well layer ≤ 3.0;

[0051] Dielectric constant: 8 ≤ dielectric constant of barrier layer < dielectric constant of well layer ≤ 12;

[0052] Piezoelectric polarization coefficient: 0.7 ≤ piezoelectric polarization coefficient of barrier layer < piezoelectric polarization coefficient of well layer ≤ 1.0.

[0053] This embodiment, based on a traditional semiconductor laser, differentiates the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the well layer and barrier layer in the active layer 103. This improves photon degeneracy, making stimulated emission of the laser greater than spontaneous emission, enhancing transverse mode coherence, confinement factor, and slope efficiency, while reducing the number of longitudinal modes and intermodal variations. This improves longitudinal mode temporal coherence, far-field FFP image quality, beam quality factor, and focused spot resolution.

[0054] Furthermore, the period of the active layer 103 is m: 1≤m≤3, the well layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlGaN, with a thickness of p: 5≤p≤100 angstroms and an emission wavelength of 200nm to 600nm, and the barrier layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of q: 10≤q≤200 angstroms.

[0055] The lower waveguide layer 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of x: 10 ≤ x ≤ 9000 Å; the upper waveguide layer 104 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of y: 10 ≤ y ≤ 9000 Å; the lower confinement layer 101 is any one or any combination of AlInGaN, AlInN, AlGaN, InN, InGaN, and GaN, with a thickness of z: 10 ≤ z ≤ 90000 Å; the upper confinement layer 106 and the electron blocking layer 105 are any one or any combination of AlInGaN, AlInN, AlGaN, InGaN, and GaN, with a thickness of n: 10 ≤ n ≤ 80000 Å.

[0056] As an alternative, in this embodiment, the period of the active layer 103 is s: 1≤s≤10, the well layer of the active layer 103 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, the thickness is t: 5≤t≤100 angstroms, the emission wavelength is 500nm to 2000nm, and the barrier layer of the active layer 103 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, the thickness is u: 10≤u≤200 angstroms.

[0057] The lower waveguide layer 102 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness v: 10 ≤ v ≤ 9000 Å; the upper waveguide layer 104 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness w: 10 ≤ w ≤ 9000 Å; the lower confinement layer 1 01 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness r: 10 ≤ r ≤ 90000 angstroms; the upper confinement layer 106 and the electron blocking layer 105 are any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness g: 10 ≤ g ≤ 80000 angstroms.

[0058] Furthermore, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, spinel, ZrB2, LiAlO2 and LiGaO.

[0059] Example 2

[0060] like Figures 2 to 9 As shown, this embodiment proposes a semiconductor laser, which includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 arranged sequentially from bottom to top.

[0061] Specifically, in this embodiment, the active layer 103 is a periodic structure composed of a well layer and a barrier layer. Both the well layer and the barrier layer possess refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient characteristics. Furthermore, the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient can affect the operating efficiency of the semiconductor laser.

[0062] Based on the characteristics of refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient, this embodiment differentiates the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the well layer and barrier layer in the active layer 103 to improve the working efficiency of the semiconductor laser.

[0063] Specifically, in the active layer 103 of the semiconductor laser in this embodiment, the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the well layer and the barrier layer are defined respectively:

[0064] Refractive index coefficient: The refractive index coefficient of the well layer is greater than that of the barrier layer;

[0065] Dielectric constant: The dielectric constant of the well layer is greater than that of the barrier layer;

[0066] Piezoresistive coefficient: The piezoelectric coefficient of the well layer is greater than that of the barrier layer.

[0067] More specifically, in this embodiment, the active layer 103 includes a first sub-active layer 103a and a second sub-active layer 103b. Both the first sub-active layer 103a and the second sub-active layer 103b are periodic structures composed of well layers and barrier layers. Furthermore, the In / O element ratio, refractive index, dielectric constant, and piezoelectric polarization constant of the first sub-active layer 103a and the second sub-active layer 103b also have specific distribution states.

[0068] The In / O element distribution of the first sub-active layer 103a is W-shaped, while the In / O element distribution of the second sub-active layer 103b is M-shaped.

[0069] The refractive index coefficient of the first sub-active layer 103a exhibits a W-shaped distribution, while the refractive index coefficient of the second sub-active layer 103b exhibits an M-shaped distribution.

[0070] The dielectric constant of the first sub-active layer 103a exhibits a W-type distribution, while the dielectric constant of the second sub-active layer 103b exhibits an M-type distribution.

[0071] The piezoelectric polarization coefficient of the first sub-active layer 103a exhibits a W-shaped distribution, while the piezoelectric polarization coefficient of the second sub-active layer 103b exhibits an M-shaped distribution.

[0072] This embodiment further defines the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the first sub-active layer 103a and the second sub-active layer 103b, as follows:

[0073] Refractive index coefficient: 2.0≤ refractive index coefficient b of the first sub-active layer 103a barrier layer < refractive index coefficient d of the second sub-active layer 103b barrier layer < refractive index coefficient a of the first sub-active layer 103a well layer < refractive index coefficient c of the second sub-active layer 103b well layer ≤ 3.0;

[0074] Dielectric constant: 8≤ dielectric constant f of the first sub-active layer 103a barrier layer< dielectric constant h of the second sub-active layer 103b barrier layer< dielectric constant e of the first sub-active layer 103a well layer< dielectric constant g of the second sub-active layer 103b well layer≤12;

[0075] Piezoresistive coefficient: 0.7≤ piezoelectric coefficient j of the first sub-active layer 103a barrier layer < piezoelectric coefficient l of the second sub-active layer 103b barrier layer < piezoelectric coefficient i of the first sub-active layer 103a well layer < piezoelectric coefficient k of the second sub-active layer 103b well layer ≤ 1.0.

[0076] Based on a conventional semiconductor laser, this embodiment differentiates the refractive index coefficient, dielectric constant, and piezoelectric polarization coefficient of the well layer and barrier layer in the active layer 103, thereby improving photon degeneracy, making stimulated emission of the laser greater than spontaneous emission, improving transverse mode coherence, confinement factor, and slope efficiency, and reducing the number of longitudinal modes and intermode variation, thereby improving longitudinal mode temporal coherence and far-field FFP image quality, beam quality factor, and focused spot resolution.

[0077] The table below shows a comparison of performance parameters between a conventional semiconductor laser and the semiconductor laser proposed in this embodiment. It can be seen that the beam quality factor of the semiconductor laser in this embodiment is improved from 3.7 to 1.96, an improvement of approximately 89%; the slope efficiency is improved from 0.8 W / A to 1.87 W / A, an improvement of approximately 134%; the focused spot resolution is improved from greater than 200 nm to less than 40 nm; and the confinement factor is improved from 1.4% to 2.47%, an improvement of approximately 76%. From the comparison of various performance parameters, the semiconductor laser in this embodiment is superior to the conventional semiconductor laser.

[0078] Traditional semiconductor lasers This embodiment uses a semiconductor laser. range of change <![CDATA[Beam quality factor M 2 > 3.7 1.96 89% Slope efficiency (W / A) 0.8 1.87 134% Focused spot resolution (nm) >200 <40 Limiting factors 1.40% 2.47% 76%

[0079] Furthermore, the period of the active layer 103 is m: 1≤m≤3, the well layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlGaN, with a thickness of p: 5≤p≤100 angstroms and an emission wavelength of 200nm to 600nm, and the barrier layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of q: 10≤q≤200 angstroms.

[0080] The lower waveguide layer 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of x: 10 ≤ x ≤ 9000 Å; the upper waveguide layer 104 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of y: 10 ≤ y ≤ 9000 Å; the lower confinement layer 101 is any one or any combination of AlInGaN, AlInN, AlGaN, InN, InGaN, and GaN, with a thickness of z: 10 ≤ z ≤ 90000 Å; the upper confinement layer 106 and the electron blocking layer 105 are any one or any combination of AlInGaN, AlInN, AlGaN, InGaN, and GaN, with a thickness of n: 10 ≤ n ≤ 80000 Å.

[0081] As an alternative, in this embodiment, the period of the active layer 103 is s: 1≤s≤10, the well layer of the active layer 103 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, the thickness is t: 5≤t≤100 angstroms, the emission wavelength is 500nm to 2000nm, and the barrier layer of the active layer 103 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, the thickness is u: 10≤u≤200 angstroms.

[0082] The lower waveguide layer 102 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness v: 10 ≤ v ≤ 9000 Å; the upper waveguide layer 104 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness w: 10 ≤ w ≤ 9000 Å; the lower confinement layer 1 01 is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness r: 10 ≤ r ≤ 90000 angstroms; the upper confinement layer 106 and the electron blocking layer 105 are any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness g: 10 ≤ g ≤ 80000 angstroms.

[0083] Furthermore, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2.

[0084] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, characterized in that, The active layer is a periodic structure composed of a well layer and a barrier layer. The refractive index coefficient of the active layer well layer is greater than that of the barrier layer, the dielectric constant of the active layer well layer is greater than that of the barrier layer, and the piezoelectric polarization coefficient of the active layer well layer is greater than that of the barrier layer. The active layer includes a first sub-active layer and a second sub-active layer. The In / O element distribution of the first sub-active layer is W-shaped, and the In / O element distribution of the second sub-active layer is M-shaped. The refractive index coefficient of the first sub-active layer is W-shaped, and the refractive index coefficient of the second sub-active layer is M-shaped. The dielectric constant of the first sub-active layer is W-shaped, and the dielectric constant of the second sub-active layer is M-shaped. The piezoelectric polarization coefficient of the first sub-active layer is W-shaped, and the piezoelectric polarization coefficient of the second sub-active layer is M-shaped.

2. The semiconductor laser according to claim 1, characterized in that, The period of the active layer is m: 1≤m≤3, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlGaN, with a thickness of p: 5≤p≤100 angstroms and an emission wavelength of 200nm to 600nm, and the barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of q: 10≤q≤200 angstroms.

3. The semiconductor laser according to claim 1, characterized in that, The period of the active layer is s: 1≤s≤10, the well layer of the active layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, the thickness is t: 5≤t≤100 angstroms, and the emission wavelength is 500nm to 2000nm. The barrier layer of the active layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, the thickness is u: 10≤u≤200 angstroms.

4. The semiconductor laser according to claim 1, characterized in that, The relationship between the refractive index coefficients of the first and second sub-active layers is as follows: 2.0≤ refractive index coefficient b of the first sub-active layer barrier layer < refractive index coefficient d of the second sub-active layer barrier layer < refractive index coefficient a of the first sub-active layer well layer < refractive index coefficient c of the second sub-active layer well layer ≤ 3.

0.

5. The semiconductor laser according to claim 1, characterized in that, The dielectric constant relationship between the first sub-active layer and the second sub-active layer is as follows: 8≤dielectric constant f of the first sub-active layer barrier <dielectric constant h of the second sub-active layer barrier <dielectric constant e of the first sub-active layer well <dielectric constant g of the second sub-active layer well ≤12.

6. The semiconductor laser according to claim 1, characterized in that, The relationship between the piezoelectric polarization coefficients of the first sub-active layer and the second sub-active layer is as follows: 0.7≤ piezoelectric polarization coefficient j of the first sub-active layer barrier layer<piezoelectric polarization coefficient l of the second sub-active layer barrier layer<piezoelectric polarization coefficient i of the first sub-active layer well layer<piezoelectric polarization coefficient k of the second sub-active layer well layer ≤ 1.

0.

7. The semiconductor laser according to claim 1, characterized in that, The lower waveguide layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of x: 10 ≤ x ≤ 9000 Å; the upper waveguide layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, and AlN, with a thickness of y: 10 ≤ y ≤ 9000 Å; the lower confinement layer is any one or any combination of AlInGaN, AlInN, AlGaN, InN, InGaN, and GaN, with a thickness of z: 10 ≤ z ≤ 90000 Å; the upper confinement layer and the electron blocking layer are any one or any combination of AlInGaN, AlInN, AlGaN, InGaN, and GaN, with a thickness of n: 10 ≤ n ≤ 80000 Å.

8. The semiconductor laser according to claim 1, characterized in that, The lower waveguide layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness v: 10 ≤ v ≤ 9000 Å; the upper waveguide layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness w: 10 ≤ w ≤ 9000 Å; the lower limit The superposition layer is any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness r: 10 ≤ r ≤ 90000 angstroms; the upper confinement layer and the electron blocking layer are any one or any combination of GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, SiC, Ga2O3, and BN, with a thickness g: 10 ≤ g ≤ 80000 angstroms.

9. The semiconductor laser according to claim 1, characterized in that, The substrates include sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrates, sapphire / AlN composite substrates, and sapphire / SiN composite substrates. x Any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, spinel, ZrB2, LiAlO2 and LiGaO2.

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