A method for extending the life of high purity target material

Abstract

The application provides a processing method for prolonging the service life of high-purity target material, which comprises the following steps: (1) fixing the high-purity target material on a clamp of a processing platform, and confirming the roundness and flatness of the end face and the side face of the high-purity target material; (2) performing knurling treatment on the end face and the side face of the high-purity target material to form a segmented pattern structure; each segment of the segmented pattern structure is arranged in an embedded mode with adjacent segments; and the embedded depth between each segment of the segmented pattern structure and adjacent segments is 0.2-0.3 mm. After the knurling treatment, the segmented pattern structure is arranged on the end face and the side face of the target material, which can significantly improve the roughness of the surface of the target material, enhance the adhesion, prevent the target material from being unable to effectively adhere to the back sputtering material during use, make the back sputtering material not easy to fall off, avoid the occurrence of abnormal discharge phenomenon, and prolong the service life of the target material.

Description

Technical Field

[0001] This invention belongs to the field of high-purity sputtering target technology, and particularly relates to a method for extending the lifespan of high-purity targets. Background Technology

[0002] Magnetron sputtering is one of the most commonly used technologies in industrial film coating production. It involves controlling the bombardment of a target surface with high-energy particles. These particles collide with atoms on the target surface, allowing the atoms to gain sufficient energy to escape and then deposit onto the substrate under the influence of an electric or magnetic field, completing the coating process. During magnetron sputtering, sputtered target atoms not only deposit on the substrate but also on other surfaces within the deposition chamber, including non-sputtered areas of the target, forming anti-sputtering material. Because the target surface is relatively smooth, it becomes difficult for target atoms to adhere, which can easily lead to abnormal discharge phenomena, causing deformation of the target backplane and affecting normal use.

[0003] To reduce the risk of anti-sputtering material detachment during magnetron sputtering, sandblasting is typically performed on the edges of the backplate and the sputtering surface of the target to increase their roughness. CN108265274A discloses a method for processing a target assembly, comprising: providing a target assembly including a backplate and a target, the target being located on the backplate, the target assembly including a core region and a processing region, the core region being adjacent to the processing region and the processing region surrounding the core region, and the target being located within the core region and a portion of the processing region; sandblasting a portion of the target and a portion of the backplate in the processing region to form a roughened layer on the surface of the portion of the target and the portion of the backplate; and performing a melt spraying process on the roughened layer to form a film layer on the roughened layer. When the target assembly processed by this method is used for magnetron sputtering for a long time, even if target atoms accumulate on the film layer, the target atoms will not detach, resulting in good film quality and high target utilization, thereby significantly extending the lifespan of the target.

[0004] CN111331518A discloses a method for surface treatment of high-purity copper rotating targets. The method includes: masking the high-purity copper rotating target, and then sandblasting it after the masking process. The masking process involves using adhesive tape to cover the sputtering surfaces and sides of the high-purity copper rotating target. After treatment by this method, the surfaces of the two ends of the rotating target are sandblasted with a consistent color, uniform and improved surface roughness, and are free of stains and other impurities. This method also improves the adsorption capacity of anti-sputtering materials during target sputtering, thereby improving the coating quality and yield of the target.

[0005] However, after long-term use during sputtering, the target material still experiences the phenomenon of excess ion shedding. Improving the processing method of the target material before sputtering and extending the service life of the target material has become an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0006] The purpose of this invention is to provide a processing method for extending the lifespan of high-purity sputtering targets. This processing method increases the surface roughness of the target by adding surface knurling technology. The specific knurling pattern structure can better adhere the anti-sputtering layer, effectively improve the abnormal discharge problem during use, and thus extend the lifespan of the high-purity target.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] This invention provides a method for extending the lifespan of high-purity target materials, the method comprising:

[0009] (1) Fix the high-purity target material on the fixture of the processing platform, and confirm the roundness and flatness of the end face and side face of the high-purity target material;

[0010] (2) The end face and side face of the high-purity target material are knurled to form a segmented pattern structure;

[0011] In the segmented pattern structure, each pattern segment is interlocked with adjacent patterns.

[0012] The interlocking depth between each segment of the pattern and the adjacent pattern in the segmented pattern structure is 0.2-0.3mm, for example, it can be 0.21mm, 0.22mm, 0.23mm, 0.24mm, 0.25mm, 0.26mm, 0.27mm, 0.28mm or 0.29mm, etc., but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0013] In this invention, the end face of the target material specifically refers to the area where the edge of the target material intersects with the side surface. When performing knurling treatment on the end face and side surface of the high-purity target material sequentially, the radius (R-angle) is already connected to the other side surface during the side knurling process, thus eliminating the need to change the cutting tool or knurl the R-angle.

[0014] This invention creates segmented pattern structures on the end face and side face of the target material after knurling treatment. Compared with the traditional single-segment pattern structure, the segmented pattern structure can significantly improve the roughness of the target material, enhance adhesion, prevent the target material from failing to effectively adhere to the anti-sputtering material during use, make the anti-sputtering material less likely to fall off, avoid the occurrence of abnormal discharge, and extend the service life of the target material.

[0015] In this invention, the interlocking depth between each segment of the pattern and the adjacent pattern in the segmented pattern structure is controlled within 0.2-0.3 mm, which can significantly reduce the risk of anti-sputtering material falling off and insufficient adhesion.

[0016] As a preferred technical solution of the present invention, the roundness of the end face and side face of the high-purity target material in step (1) is less than 0.1 mm.

[0017] Preferably, the flatness of the end face and side face of the high-purity target material in step (1) is less than 0.1 mm.

[0018] As a preferred technical solution of the present invention, the rotation speed of the target material in the knurling process in step (2) is 22-30 rpm / min, for example, it can be 23 rpm / min, 24 rpm / min, 25 rpm / min, 26 rpm / min, 28 rpm / min or 29 rpm / min, etc., but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0019] Preferably, the knurling wheel pressure in step (2) is 0.8-1.5 mm, for example, it can be 0.9 mm, 1 mm, 1.1 mm, 1.2 mm, 1.3 mm or 1.4 mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0020] This invention ensures the stability of the knurling process by controlling the rotation speed of the target and the pressure of the knurling wheel on the target, thereby obtaining specific knurling patterns in the required area of ​​the target and increasing the surface roughness of the target.

[0021] As a preferred technical solution of the present invention, when the end face of the high-purity target is knurled, the included angle between the knurling tool and the plane of the target is 90° or 180°.

[0022] Preferably, the width of the knurled area on the end face of the high-purity target material in step (2) is 5-6.2 mm, for example, it can be 5.2 mm, 5.4 mm, 5.5 mm, 5.6 mm, 5.8 mm or 6 mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0023] As a preferred technical solution of the present invention, when the side surface of the high-purity target is knurled, the included angle between the knurling tool and the target plane is 35°-135°, for example, it can be 45°, 55°, 65°, 75°, 85°, 95°, 105°, 115° or 125°, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0024] Preferably, the width of the knurled area on the side of the high-purity target material in step (2) is 3-6 mm, for example, it can be 3.2 mm, 3.5 mm, 4 mm, 4.5 mm, 5 mm or 5.5 mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0025] As a preferred technical solution of the present invention, the segmented pattern structure in step (2) is at least a 2-segment pattern structure, for example, it can be a 2-segment, 3-segment, 4-segment or 5-segment structure, but is not limited to the listed values. Other unlisted values ​​within the range of values ​​are also applicable.

[0026] Preferably, the segmented pattern structure in step (2) includes a rhombus shape.

[0027] As a preferred technical solution of the present invention, the pattern density in the segmented pattern structure described in step (2) is 60-120 TPI, for example, it can be 65 TPI, 70 TPI, 75 TPI, 80 TPI, 85 TPI, 90 TPI, 95 TPI, 100 TPI, 105 TPI, 110 TPI or 115 TPI, etc., but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0028] Preferably, the pattern depth in the segmented pattern structure described in step (2) is 0.28-0.46 mm, for example, it can be 0.3 mm, 0.32 mm, 0.34 mm, 0.36 mm, 0.38 mm, 0.4 mm, 0.42 mm or 0.44 mm, etc., but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0029] The knurling density and depth described in this invention need to be controlled within a reasonable range, and the surface roughness of the target material in the knurled area should be moderate to avoid the formation of a thick anti-sputtering deposition layer, while also avoiding the problem of anti-sputtering material falling off.

[0030] As a preferred technical solution of the present invention, the surface roughness of the knurled area after the knurling treatment in step (2) is 32-38μm, for example, it can be 33μm, 34μm, 35μm, 36μm, 37μm or 38μm, etc., but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0031] As a preferred technical solution of the present invention, step (2) further includes a cleaning process after the knurling process.

[0032] Preferably, the cleaning process includes cleaning with ethanol and isopropanol (IPA solution) in sequence.

[0033] As a preferred technical solution of the present invention, the processing method includes:

[0034] (1) Fix the high-purity target material on the fixture of the processing platform, and confirm the roundness and flatness of the end face and side face of the high-purity target material;

[0035] (2) The end face and side face of the high-purity target material are knurled to form a segmented pattern structure;

[0036] The rotational speed of the target material in the knurling process is 22-30 rpm / min, and the downward pressure of the knurling wheel is 0.8-1.5 mm.

[0037] When performing knurling on the end face of the high-purity target material, the included angle between the knurling tool and the target material plane is 90° or 180°; the width of the knurled area on the end face of the high-purity target material is 5-6.2 mm.

[0038] When performing knurling on the side of the high-purity target material, the included angle between the knurling tool and the target material plane is 35°-135°; the width of the knurled area on the side of the high-purity target material is 3-6mm.

[0039] The segmented pattern structure is at least a two-segment pattern structure; in the segmented pattern structure, each segment of the pattern is interlocked with the adjacent pattern, and the interlocking depth is 0.2-0.3mm;

[0040] The segmented pattern structure has a pattern density of 60-120 TPI and a pattern depth of 0.28-0.46 mm; the surface roughness of the knurled area after the knurling treatment is 32-38 μm.

[0041] (3) The end face and side face of the high-purity target material are cleaned with ethanol and isopropanol in sequence.

[0042] The numerical range described in this invention includes not only the point values ​​listed above, but also any point values ​​within the numerical ranges not listed above. Due to space limitations and for the sake of brevity, this invention will not exhaustively list all the specific point values ​​included in the range.

[0043] Compared with the prior art, the present invention has the following beneficial effects:

[0044] The processing method provided by this invention sets segmented pattern structures on the end face and side face of the target material after knurling treatment. At the same time, the interlocking depth between adjacent patterns in the segmented pattern structure is controlled within 0.2-0.3mm, which can significantly increase the surface roughness of the target material, enhance its adhesion, prevent the target material from failing to effectively adhere to the anti-sputtering material during use, avoid the occurrence of abnormal discharge phenomenon, and extend the service life of the target material. Attached Figure Description

[0045] Figure 1 This is a schematic diagram of the segmented pattern structure formed after the knurling treatment of the target material according to Embodiment 1 of the present invention;

[0046] Figure 2This is a schematic diagram of the segmented knurling operation at the end face of the target material in the knurling process provided in Embodiment 1 of the present invention;

[0047] Figure 3 This is a schematic diagram of the segmented knurling operation on the side of the target material in the knurling process provided in Embodiment 1 of the present invention;

[0048] Among them, 1-target material, 2-knurling wheel, 3-knurling tool. Detailed Implementation

[0049] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0050] Example 1

[0051] This embodiment provides a method for extending the lifespan of high-purity aluminum sputtering targets, the method comprising:

[0052] (1) Fix the high-purity aluminum target on the fixture of the processing platform and confirm the roundness and flatness of the end face and side face of the high-purity aluminum target.

[0053] Confirm that the roundness and flatness errors are both within 0.05mm;

[0054] (2) The end face and side face of the high-purity aluminum target are knurled to form a segmented pattern structure.

[0055] The knurling process involves rotating the aluminum target at 25 rpm / min and applying 1.2 mm of pressure from the knurling wheel.

[0056] When the end face of the high-purity aluminum target is knurled (e.g.) Figure 2 As shown), the included angle between the knurling tool and the target plane is 90° or 180°; the width of the knurled area on the end face of the high-purity aluminum target is 5.5mm;

[0057] When performing knurling treatment on the side surface of the high-purity aluminum target (e.g.) Figure 3 As shown), the included angle between the knurling tool and the plane of the aluminum target is 125°-135°; the width of the knurling area on the side of the high-purity aluminum target is 5mm.

[0058] The segmented pattern structure is a two-segment diamond pattern structure (e.g.) Figure 1 (As shown); in the segmented pattern structure, each pattern segment is interlocked with adjacent patterns, with an interlocking depth of 0.25mm;

[0059] The segmented pattern structure has a pattern density of 80 TPI and a pattern depth of 0.36 mm; the surface roughness of the knurled area after the knurling treatment is 35 μm.

[0060] (3) The end face and side face of the high-purity aluminum target are cleaned with ethanol and isopropanol in sequence.

[0061] The processing method provided in this embodiment for high-purity aluminum targets results in strong adhesion in the non-sputtering areas, avoiding abnormal discharge phenomena and ensuring normal sputtering of the target during the coating process, thus protecting the wafer from damage.

[0062] Example 2

[0063] This embodiment provides a method for extending the lifespan of high-purity aluminum sputtering targets, the method comprising:

[0064] (1) Fix the high-purity aluminum target on the fixture of the processing platform and confirm the roundness and flatness of the end face and side face of the high-purity aluminum target.

[0065] Confirm that the roundness and flatness errors are both within 0.05mm;

[0066] (2) The end face and side face of the high-purity aluminum target are knurled to form a segmented pattern structure.

[0067] The knurling process involves rotating the aluminum target at 28 rpm / min and applying 0.85 mm of pressure from the knurling wheel.

[0068] When performing knurling on the end face of the high-purity aluminum target, the included angle between the knurling tool and the target plane is 90° or 180°; the width of the knurled area on the end face of the high-purity aluminum target is 5mm.

[0069] When performing knurling on the side of the high-purity aluminum target, the included angle between the knurling tool and the plane of the aluminum target is 110°-120°; the width of the knurled area on the side of the high-purity aluminum target is 4mm.

[0070] The segmented pattern structure is a 3-segment diamond pattern structure; in the segmented pattern structure, each segment of the pattern is interlocked with the adjacent pattern, and the interlocking depth is 0.2mm;

[0071] The segmented pattern structure has a pattern density of 60 TPI and a pattern depth of 0.45 mm; the surface roughness of the knurled area after the knurling treatment is 38 μm.

[0072] (3) The end face and side face of the high-purity aluminum target are cleaned with ethanol and isopropanol in sequence.

[0073] The processing method provided in this embodiment for high-purity aluminum targets results in strong adhesion in the non-sputtering areas, avoiding abnormal discharge phenomena and ensuring normal sputtering of the target during the coating process, thus protecting the wafer from damage.

[0074] Example 3

[0075] This embodiment provides a method for extending the lifespan of high-purity aluminum sputtering targets, the method comprising:

[0076] (1) Fix the high-purity aluminum target on the fixture of the processing platform and confirm the roundness and flatness of the end face and side face of the high-purity aluminum target.

[0077] Confirm that the roundness and flatness errors are both within 0.05mm;

[0078] (2) The end face and side face of the high-purity aluminum target are knurled to form a segmented pattern structure.

[0079] The knurling process involves rotating the aluminum target at 22 rpm / min and applying 1.5 mm of pressure from the knurling wheel.

[0080] When performing knurling on the end face of the high-purity aluminum target, the included angle between the knurling tool and the target plane is 90° or 180°; the width of the knurled area on the end face of the high-purity aluminum target is 6mm.

[0081] When performing knurling on the side of the high-purity aluminum target, the included angle between the knurling tool and the plane of the aluminum target is 115°-125°; the width of the knurled area on the side of the high-purity aluminum target is 6mm.

[0082] The segmented pattern structure is a two-segment diamond pattern structure; in the segmented pattern structure, each segment of the pattern is interlocked with the adjacent pattern, and the interlocking depth is 0.3mm;

[0083] The segmented pattern structure has a pattern density of 105 TPI and a pattern depth of 0.3 mm; the surface roughness of the knurled area after the knurling treatment is 36 μm.

[0084] (3) The end face and side face of the high-purity aluminum target are cleaned with ethanol and isopropanol in sequence.

[0085] The processing method provided in this embodiment for high-purity aluminum targets results in strong adhesion in the non-sputtering areas, avoiding abnormal discharge phenomena and ensuring normal sputtering of the target during the coating process, thus protecting the wafer from damage.

[0086] Example 4

[0087] This embodiment provides a method for extending the life of high-purity aluminum sputtering targets. Except for the knurling wheel pressing down 0.6 mm in step (2), all other conditions are the same as in embodiment 1.

[0088] When processing high-purity aluminum targets using the processing method provided in this embodiment, if the current pressure is too low, the roughness of the knurled area will be too low, resulting in insufficient adhesion. This can easily cause the target material to fail to adhere during the coating process, leading to damage to the wafer.

[0089] Example 5

[0090] This embodiment provides a method for extending the life of high-purity aluminum sputtering targets. Except for the knurling wheel pressing down by 1.8 mm in step (2), all other conditions are the same as in embodiment 1.

[0091] When processing high-purity aluminum targets using the method provided in this embodiment, excessive pressure can lead to excessive roughness in the knurled area, which can easily cause tip discharge during the coating process and poses a risk of adhering material detachment.

[0092] Example 6

[0093] This embodiment provides a method for extending the life of high-purity aluminum sputtering targets. Except for the pattern depth of 0.23 mm in the segmented pattern structure in step (2), all other conditions are the same as in embodiment 1.

[0094] When processing high-purity aluminum targets using the method provided in this embodiment, if the pattern depth is too shallow, the roughness of the knurled area will be too small, which may cause the target material to fail to adhere during the coating process.

[0095] Example 7

[0096] This embodiment provides a method for extending the life of high-purity aluminum sputtering targets. Except for the pattern depth of 0.5 mm in the segmented pattern structure in step (2), all other conditions are the same as in embodiment 1.

[0097] When processing high-purity aluminum targets using the method provided in this embodiment, if the pattern depth is too deep, the roughness of the knurled area will be too large, which will easily cause tip discharge during the coating process and pose a risk of adhering substances falling off.

[0098] Example 8

[0099] This embodiment provides a method for extending the lifespan of high-purity aluminum sputtering targets. Except for step (2), where the segmented pattern structure is a two-segment mesh pattern structure, all other conditions are the same as in embodiment 1.

[0100] The high-purity aluminum sputtering material processed using the method provided in this embodiment suffers damage to the wafer due to the wide and protruding truncated pyramids of the mesh pattern, which result in insufficient adsorption force for the deposited material.

[0101] Comparative Example 1

[0102] This comparative example provides a method for extending the lifespan of high-purity aluminum sputtering targets. Except for the formation of a single-segment rhomboid pattern structure in step (2), all other conditions are the same as in Example 1.

[0103] The processing of high-purity aluminum sputtering targets using the method provided in this comparative example resulted in poor roughness improvement in the one-segment rhomboid pattern structure, which significantly weakened the adhesion. During the sputtering process, the adhering material often detached, causing damage to the wafer.

[0104] Comparative Example 2

[0105] This comparative example provides a method for extending the life of high-purity aluminum sputtering targets. Except for step (2), where the interlocking depth between each segment of the pattern and the adjacent pattern is 0.15 mm, all other conditions are the same as in Example 1.

[0106] When processing high-purity aluminum targets using the method provided in this comparative example, if the embedding depth is too short, the roughness of the knurled area will be too small, which may cause the sputtered material on the target to fail to adhere during the coating process.

[0107] Comparative Example 3

[0108] This comparative example provides a method for extending the life of high-purity aluminum sputtering material. Except for step (2), where the interlocking depth between each segment of the pattern and the adjacent pattern is 0.35 mm, all other conditions are the same as in Example 1.

[0109] When processing high-purity aluminum targets using the method provided in this comparative example, if the embedding depth is too long, the roughness of the knurled area will be too large, which will easily generate tip discharge during the coating process and pose a risk of adhering substances falling off.

[0110] The applicant declares that the detailed structural features of the present invention are illustrated through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must rely on the above detailed structural features to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions for the components selected in the present invention, additions of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

[0111] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0112] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0113] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A method for extending the lifespan of high-purity aluminum sputtering targets, characterized in that, The processing method includes: (1) Fix the high-purity aluminum target on the fixture of the processing platform and confirm the roundness and flatness of the end face and side face of the high-purity aluminum target. (2) The end face and side face of the high-purity aluminum target are knurled to form a segmented pattern structure; In the segmented pattern structure, each segment of the pattern is interlocked with adjacent patterns; the interlocking depth between each segment of the pattern and adjacent patterns is 0.2-0.3 mm. The width of the knurled area on the end face of the high-purity aluminum target in step (2) is 5-6.2 mm; The segmented pattern structure described in step (2) is at least a two-segment pattern structure; The segmented pattern structure described in step (2) includes rhombuses; The pattern density in the segmented pattern structure described in step (2) is 60-120 TPI; In step (2), the pattern depth in the segmented pattern structure is 0.28-0.46 mm.

2. The processing method according to claim 1, characterized in that, The roundness of the end face and side face of the high-purity aluminum target material in step (1) is less than 0.1 mm.

3. The processing method according to claim 1, characterized in that, The flatness of the end face and side face of the high-purity aluminum target material in step (1) is less than 0.1 mm.

4. The processing method according to claim 1, characterized in that, In step (2), the rotation speed of the aluminum target during the knurling process is 22-30 rpm / min.

5. The processing method according to claim 1, characterized in that, In step (2), the knurling wheel is pressed down by 0.8-1.5 mm.

6. The processing method according to claim 1, characterized in that, When performing knurling on the end face of the high-purity aluminum target, the included angle between the knurling tool and the target plane is 90° or 180°.

7. The processing method according to claim 1, characterized in that, When performing knurling on the side of the high-purity aluminum target, the angle between the knurling tool and the target plane is 35°-135°.

8. The processing method according to claim 1, characterized in that, The width of the knurled area on the side of the high-purity aluminum target material in step (2) is 3-6 mm.

9. The processing method according to claim 1, characterized in that, The surface roughness of the knurled area after the knurling treatment in step (2) is 32-38 μm.

10. The processing method according to claim 1, characterized in that, Step (2) includes a cleaning process after the knurling process.

11. The processing method according to claim 10, characterized in that, The cleaning process includes cleaning with ethanol and isopropanol in sequence.

12. The processing method according to claim 1, characterized in that, The processing method includes: (1) Fix the high-purity aluminum target on the fixture of the processing platform and confirm the roundness and flatness of the end face and side face of the high-purity aluminum target. (2) The end face and side face of the high-purity aluminum target are knurled to form a segmented pattern structure; The knurling process involves rotating the aluminum target at 22-30 rpm / min and applying 0.8-1.5 mm of pressure from the knurling wheel. When performing knurling on the end face of the high-purity aluminum target, the included angle between the knurling tool and the plane of the aluminum target is 90° or 180°; the width of the knurled area on the end face of the high-purity aluminum target is 5-6.2 mm. When performing knurling on the side of the high-purity aluminum target, the included angle between the knurling tool and the plane of the aluminum target is 35°-135°; the width of the knurled area on the side of the high-purity aluminum target is 3-6mm. The segmented pattern structure is at least a two-segment pattern structure; in the segmented pattern structure, each segment of the pattern is interlocked with the adjacent pattern, and the interlocking depth is 0.2-0.3mm; The segmented pattern structure has a pattern density of 60-120 TPI and a pattern depth of 0.28-0.46 mm; the surface roughness of the knurled area after the knurling treatment is 32-38 μm. (3) The end face and side face of the high-purity aluminum target are cleaned with ethanol and isopropanol in sequence.

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