An electrostatic valve

Abstract

This invention relates to the field of valve technology and discloses an electrostatic valve. The electrostatic valve includes: a first valve mechanism comprising a first rigid substrate and a first electrostatic layer on the first rigid substrate; a second valve mechanism opposite to the side of the first valve mechanism containing the first electrostatic layer, the second valve mechanism and the first valve mechanism cooperating to form a first airflow channel, the second valve mechanism including a second electrostatic layer disposed opposite to the first electrostatic layer, the second electrostatic layer being bendable towards the first electrostatic layer due to electrostatic attraction, the bendable deformation of the second electrostatic layer to abut against the first electrostatic layer to close the first airflow channel; and a deformation limiting portion for limiting the bending deformation of the second electrostatic layer along the arrangement direction of the first and second valve mechanisms. This electrostatic valve can ensure valve closure, sealing performance when closed, and electrical connection performance.

Description

Technical Field

[0001] This invention relates to the field of valve technology, and in particular to an electrostatic valve. Background Technology

[0002] An electrostatic valve is a gas valve that controls gas flow based on the principle of electrostatics. It can be used in gas detection, experimental gas control and delivery, and other scenarios. The structure of an electrostatic valve consists of two electrostatic layers. The attraction between these two layers, based on the principle of electrostatic attraction, closes the valve. However, during use, if subjected to a large gas flow, the electrostatic layers may deform significantly, affecting the valve's performance. Summary of the Invention

[0003] This invention provides an electrostatic valve that can ensure valve closure, sealing performance when closed, and electrical connection performance.

[0004] To achieve the above objectives, the present invention provides the following technical solution:

[0005] An electrostatic valve, comprising:

[0006] A first valve mechanism, the first valve mechanism including a first rigid substrate and a first electrostatic layer located on the first rigid substrate;

[0007] The second valve mechanism is opposite to the side of the first valve mechanism where the first electrostatic layer is located. The second valve mechanism and the first valve mechanism cooperate to form a first air passage. The second valve mechanism includes a second electrostatic layer disposed opposite to the first electrostatic layer. The second electrostatic layer can be bent and deformed toward the first electrostatic layer due to electrostatic attraction. When the second electrostatic layer is bent and deformed to abut against the first electrostatic layer, the first air passage can be closed.

[0008] A deformation limiting part is provided to limit the bending deformation of the second electrostatic layer along the arrangement direction of the first valve mechanism and the second valve mechanism.

[0009] Optionally, the first electrostatic layer includes a first metal layer located on the first rigid substrate and an insulating layer located on the side of the first metal layer facing away from the first rigid substrate.

[0010] The second electrostatic layer includes a flexible substrate and a second metal layer stacked along the arrangement direction of the first valve mechanism and the second valve mechanism.

[0011] Optionally, the first valve mechanism further includes a vent and a first support layer;

[0012] The vent hole penetrates the first rigid substrate and the first electrostatic layer;

[0013] The first support layer is located on the side of the first electrostatic layer away from the first rigid substrate. The first support layer has a first cutout portion. The orthographic projection of the first cutout portion on the first rigid substrate covers the orthographic projection of the vent hole on the first rigid substrate. The vent hole communicates with the first cutout portion to form the first air passage.

[0014] The orthographic projection of the second electrostatic layer on the first rigid substrate covers the orthographic projection of the vent hole on the first rigid substrate. The edge of the second electrostatic layer is fixedly connected to the side of the first support layer away from the first electrostatic layer. The second electrostatic layer can be bent and deformed to abut against the edge of the vent hole to close the air passage.

[0015] Optionally, the deformation limiting portion includes a blocking layer located on the side of the second electrostatic layer opposite to the first electrostatic layer.

[0016] Optionally, the edge of the barrier layer is fixedly connected to the side of the first support layer away from the insulating layer, the barrier layer is in the shape of an arc bent in the direction from the first electrostatic layer to the second electrostatic layer, and there is a deformable space between the barrier layer and the second electrostatic layer.

[0017] Optionally, the deformation limiting portion further includes a second support layer located between the blocking layer and the second electrostatic layer, the second support layer having a second cutout portion disposed opposite to the first cutout portion.

[0018] Optionally, the barrier layer is a rigid baffle.

[0019] Optionally, the barrier layer is a third electrostatic layer, and the same voltage is applied to the third electrostatic layer as to the second electrostatic layer.

[0020] Optionally, a second airflow channel is formed between the barrier layer and the second electrostatic layer.

[0021] Optionally, the barrier layer includes a support substrate and a third metal layer stacked along the arrangement direction of the first valve mechanism and the second valve mechanism.

[0022] Optionally, the second valve mechanism further includes a second rigid substrate disposed opposite to the first electrostatic layer, the second rigid substrate having a first air passage between it and the first electrostatic layer, the second rigid substrate having a first through hole, the orthographic projection of the second electrostatic layer on the second rigid substrate covering the first through hole, and the edge of the second electrostatic layer being fixedly connected to the second rigid substrate.

[0023] Optionally, the second rigid substrate has a second through hole;

[0024] The deformation limiting part includes a flexible pressure relief layer, the orthographic projection of which covers the second through hole on the second rigid substrate, and the edge of which is fixedly connected to the second rigid substrate.

[0025] Optionally, the first rigid substrate has a third through hole, and the orthographic projection of the third through hole on the first rigid substrate does not overlap with the orthographic projection of the first electrostatic layer on the first rigid substrate.

[0026] The deformation limiting part includes a third support layer, a pressure relief substrate, and a pressure relief part;

[0027] The third support layer is located on the side of the first rigid substrate away from the first electrostatic layer. The third support layer has a pressure relief through hole, and the orthogonal projection of the pressure relief through hole on the first rigid substrate covers the third through hole.

[0028] The pressure relief substrate is located on the side of the third support layer away from the first rigid substrate, and there is a pressure relief flow channel between the pressure relief substrate and the third support layer that communicates with the pressure relief through hole;

[0029] The pressure relief section is located at the pressure relief through hole. When the first electrostatic layer and the second electrostatic layer come into contact, the pressure relief section can be opened to relieve pressure.

[0030] Optionally, the pressure relief section includes a flexible sealing layer, a pressure relief pipe, and a limiting layer;

[0031] The flexible sealing layer is sealed to the sidewall of the pressure relief through hole, and the flexible sealing layer has a connection through hole;

[0032] The first end of the pressure relief pipe is sealed to the edge of the connecting through hole;

[0033] The limiting layer is located on the side of the first rigid substrate away from the first electrostatic layer and is located in the pressure relief through hole. The limiting layer is opposite to the second end of the pressure relief tube, and the limiting layer can attract the second end of the pressure relief tube so that the second end of the pressure relief tube abuts against the limiting layer.

[0034] When the first electrostatic layer and the second electrostatic layer come into contact, and the air pressure in the first air passage reaches the preset pressure, the second end of the pressure relief pipe can be detached from the limiting layer.

[0035] This invention provides an electrostatic valve, including a first valve mechanism, a second valve mechanism, and a deformation limiting part. The first valve mechanism includes a first rigid substrate and a first electrostatic layer located on the first rigid substrate. The second valve mechanism cooperates with the first valve mechanism to form a first air passage. The second valve mechanism includes a second electrostatic layer disposed opposite to the first electrostatic layer. The second electrostatic layer bends and deforms due to electrostatic action until it abuts against the first electrostatic layer, thereby closing the first air passage. Since the deformation limiting part is used to limit the bending deformation of the second electrostatic layer along the arrangement direction of the first and second valve mechanisms, it can prevent the deformation of the second electrostatic layer from exceeding its own elastic recovery range and prevent the second electrostatic layer from becoming uneven. This ensures the valve's closing, sealing performance when closed, and electrical connection performance. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the planar structure of an electrostatic valve in related technologies;

[0037] Figure 2 for Figure 1 Cross-sectional view at point AA';

[0038] Figure 3 , Figure 4 and Figure 5 This is a state diagram of an electrostatic valve in related technologies;

[0039] Figure 6 This is a state diagram of the second electrostatic layer in the related technology;

[0040] Figure 7 A schematic diagram of the structure of an electrostatic valve provided in an embodiment of the present invention;

[0041] Figure 8 A state diagram of an electrostatic valve provided in an embodiment of the present invention;

[0042] Figure 9 A schematic diagram of the structure of an electrostatic valve provided in an embodiment of the present invention;

[0043] Figure 10 A state diagram of an electrostatic valve provided in an embodiment of the present invention;

[0044] Figure 11 A schematic diagram of the structure of an electrostatic valve provided in an embodiment of the present invention;

[0045] Figure 12 , Figure 13 A state diagram of an electrostatic valve provided in an embodiment of the present invention;

[0046] Figure 14 This is a schematic diagram of the planar structure of an electrostatic valve provided in an embodiment of the present invention;

[0047] Figure 15 for Figure 14 Cross-sectional view at point BB';

[0048] Figure 16 A state diagram of an electrostatic valve provided in an embodiment of the present invention;

[0049] Figure 17 A schematic diagram of the structure of an electrostatic valve provided in an embodiment of the present invention;

[0050] Figure 18 This is a state diagram of an electrostatic valve provided in an embodiment of the present invention.

[0051] icon:

[0052] 1-First valve mechanism; 11-First rigid substrate; 12-First electrostatic layer; 121-First metal layer; 122-Insulating layer; 13-First support layer; 101-Ventilation hole; 102-Third through hole; 2-Second valve mechanism; 21-Second electrostatic layer; 211-Flexible substrate; 212-Second metal layer; 22-Second rigid substrate; 201-First through hole; 202-Second through hole; 3-Deformation limiting part; 31-Blocking layer; 311-Third metal layer; 312-Supporting substrate; 32-Second support layer; 33-Flexible pressure relief layer; 34-Third support layer; 35-Pressure relief substrate; 36-Pressure relief part; 361-Flexible sealing layer; 362-Pressure relief pipe; 363-Limiting layer; 301-Pressure relief through hole. Detailed Implementation

[0053] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0054] In related technologies, the structure of an electrostatic valve can be as follows: Figure 1 and Figure 2 As shown, the device specifically includes a rigid substrate 01, a first electrostatic layer 02 located on the rigid substrate 01, a second electrostatic layer 04 disposed opposite to the first electrostatic layer 02, and a support layer 03 located between the first electrostatic layer 02 and the second electrostatic layer 04. The electrostatic valve also includes a vent 011 penetrating the rigid substrate 01 and the first electrostatic layer 02, the vent 011 being opposite to the second electrostatic layer 04, and an airflow channel between the first electrostatic layer 01 and the second electrostatic layer 02. The vent 011 is connected to the airflow channel, and the airflow direction of the gas in the airflow channel can be as follows: Figure 1As indicated by the middle arrow, the electrostatic valve can be connected to the outer pipe 05 and the outer pipe 06 to control the airflow of the gas transported in the pipe.

[0055] The first electrostatic layer 02 includes a first metal layer 021 and an insulating layer 022, and the second electrostatic layer 04 includes a flexible substrate 041 and a second metal layer 042. Applying a voltage difference to the first metal layer 021 and the second metal layer 042 provides electrostatic force between the first electrostatic layer 02 and the second electrostatic layer 04, causing them to attract each other. Figure 2 As shown, the electrostatic valve is normally open before a voltage difference is applied to the first electrostatic layer 02 and the second electrostatic layer 04; Figure 3 As shown, after a voltage difference is applied to the first electrostatic layer 02 and the second electrostatic layer 04, due to electrostatic action, the second electrostatic layer 04 deforms and arches towards the first electrostatic layer 02, thereby blocking the connection between the vent 011 and the air passage, thus closing the valve and functioning as a valve switch; Figure 4 The image shows the state of airflow when the electrostatic valve is open.

[0056] However, during the use of the electrostatic valve, if the valve is subjected to a large airflow, the following situation may occur:

[0057] (1) When the airflow acts on the second electrostatic layer 04, the second electrostatic layer 04 undergoes significant deformation. When the deformation of the second electrostatic layer 04 exceeds its own elastic recovery range, the second electrostatic layer 04 exhibits unevenness, such as... Figure 5 The diagram shows the operating state of the electrostatic valve under high airflow conditions. When the electrostatic valve is closed, the second electrostatic layer 04 needs to have good contact with the vent 011. When the flatness of the second electrostatic layer 04 decreases, the sealing performance between the second electrostatic layer 04 and the vent 011 will decrease.

[0058] (2) After the second electrostatic layer 04 becomes uneven, due to the inconsistent deformation capabilities of the flexible substrate 041 and the second metal layer 042, the second metal layer 042 may crack, resulting in poor electrical connection performance, such as... Figure 6 As shown.

[0059] (3) When the airflow acts on the second electrostatic layer 04, the distance between the second metal layer 042 and the first metal layer 021 of the second electrostatic layer 04 increases significantly, and the electrostatic force required for closing increases significantly. The previously set closing voltage is lower than this voltage, causing the electrostatic valve to fail to close.

[0060] To address the aforementioned technical problems, embodiments of the present invention provide an electrostatic valve, such as... Figure 7 , Figure 9 , Figure 11 , Figure 15 as well as Figure 17 As shown, it includes:

[0061] The first valve mechanism 1 includes a first rigid substrate 11 and a first electrostatic layer 12 located on the first rigid substrate 11.

[0062] The second valve mechanism 2 is opposite to the side where the first electrostatic layer 12 is located on the first valve mechanism 1. The second valve mechanism 2 and the first valve mechanism 1 cooperate to form a first air passage. The second valve mechanism 2 includes a second electrostatic layer 21 disposed opposite to the first electrostatic layer 12. The second electrostatic layer 21 can be bent and deformed toward the first electrostatic layer 12 due to electrostatic attraction. When the second electrostatic layer 21 is bent and deformed to abut against the first electrostatic layer 12, the first air passage can be closed.

[0063] The deformation limiting part 3 is used to limit the bending deformation of the second electrostatic layer 21 along the arrangement direction of the first valve mechanism 1 and the second valve mechanism 2.

[0064] The electrostatic valve provided in this embodiment of the invention includes a first valve mechanism 1, a second valve mechanism 2, and a deformation limiting part 3. The first valve mechanism 1 includes a first rigid substrate 11 and a first electrostatic layer 12 located on the first rigid substrate 11. The second valve mechanism 2 cooperates with the first valve mechanism 1 to form a first air passage. The second valve mechanism 2 includes a second electrostatic layer 21 disposed opposite to the first electrostatic layer 12. The second electrostatic layer 21 bends and deforms due to electrostatic action until it abuts against the first electrostatic layer 12, which can close the first air passage. Since the deformation limiting part 3 is used to limit the bending deformation of the second electrostatic layer 21 along the arrangement direction of the first valve mechanism 1 and the second valve mechanism 2, it can prevent the deformation of the second electrostatic layer 21 from exceeding its own elastic recovery range and prevent the second electrostatic layer 21 from producing uneven changes. This ensures the valve is closed, the sealing performance when closed, and the electrical connection performance of the valve.

[0065] Specifically, the first electrostatic layer 12 may include a first metal layer 121 located on the first rigid substrate 11 and an insulating layer 122 located on the side of the first metal layer 121 facing away from the first rigid substrate 11; the second electrostatic layer 21 may include a flexible substrate 211 and a second metal layer 212 stacked along the arrangement direction of the first valve mechanism 1 and the second valve mechanism 2; by applying a voltage difference to the first metal layer 121 and the second metal layer 212, an electrostatic force is generated between the first electrostatic layer 12 and the second electrostatic layer 21, and the second electrostatic layer 21 can arch towards the first electrostatic layer 12 due to electrostatic action, blocking the first air passage and causing the electrostatic valve to close.

[0066] In this design, the positions of the flexible substrate 211 and the second metal layer 212 in the second electrostatic layer 21 can be interchanged to increase the electrostatic gap. The positions of the flexible substrate and the second metal layer 212 in the second electrostatic layer 21 are not limited here and are determined according to the actual situation. Specifically, the material of the insulating layer 122 can be silicon nitride, silicon oxide, Su-8, etc., the materials of the first metal layer 121 and the second metal layer 212 can be Al, Au, Cu, etc., and the material of the flexible substrate 211 can be Su-8, PI, PDMS, etc. The flexible substrate 211 can adjust the overall film strength of the second electrostatic layer 21.

[0067] In one possible implementation, such as Figure 7 , Figure 9 and Figure 11 As shown, the first valve mechanism 1 may further include a vent 101 and a first support layer 13; the vent 101 penetrates the first rigid substrate 11 and the first electrostatic layer 12; the first support layer 13 is located on the side of the first electrostatic layer opposite to the first rigid substrate, and the first support layer 13 has a first hollow portion, the orthographic projection of the first hollow portion on the first rigid substrate 11 covering the orthographic projection of the vent 101 on the first rigid substrate 11, and the vent 101 communicates with the first hollow portion to form a first air passage; the orthographic projection of the second electrostatic layer 21 on the first rigid substrate 11 covers the orthographic projection of the vent 101 on the first rigid substrate 11, the edge of the second electrostatic layer 21 is fixedly connected to the side of the first support layer 13 opposite to the first electrostatic layer, and the second electrostatic layer 21 can be bent and deformed to abut against the edge of the vent 101 to close the air passage. The first support layer 13 can provide support for the second electrostatic layer 21 and can ensure the size of the electrostatic gap between the first electrostatic layer 12 and the second electrostatic layer 21.

[0068] like Figure 7 , Figure 9 and Figure 11 As shown, the deformation limiting part 3 can be a blocking layer 31 located on the side of the second electrostatic layer 21 away from the first electrostatic layer 12. When atmospheric air flows into the first air passage of the electrostatic valve, the airflow flows in through the vent 101. The direction of the airflow is perpendicular to the extension surface of the second electrostatic layer 21. The airflow will exert pressure on the second electrostatic layer 21 away from the first electrostatic layer 12. Through the blocking of the second electrostatic layer 21 on the side away from the first electrostatic layer 12 by the blocking layer 31, the blocking layer 31 can apply a force to the second electrostatic layer 21 towards the first electrostatic layer 12 to deform it. This limits the height of the arching of the second electrostatic layer 21 towards the blocking layer 31, and can prevent the impact of the large airflow on the second electrostatic layer 21. The distance between the blocking layer 31 and the second electrostatic layer 21 can be set within the elastic recovery range of the second electrostatic layer 21, which can prevent the second electrostatic layer 21 from becoming uneven.

[0069] Specifically, such as Figure 7 As shown, the edge of the aforementioned barrier layer 31 can be fixedly connected to the side of the first support layer 13 opposite to the insulating layer 122. The barrier layer 31 is curved in an arc shape along the direction from the first electrostatic layer 12 to the second electrostatic layer 21, and there is a deformable space between the barrier layer 31 and the second electrostatic layer 21. Figure 8 As shown, when atmospheric air flows into the first air passage of the electrostatic valve, the arc-shaped blocking layer 31 can fit more closely with the second electrostatic layer 21 when it is deformed and bent, which is beneficial to the protection of the second electrostatic layer 21.

[0070] Specifically, such as Figure 9 As shown, the deformation limiting part 3 may further include a second support layer 32 located between the blocking layer 31 and the second electrostatic layer 21. The second support layer 32 has a second cutout portion disposed opposite to the first cutout portion. The second support layer 32 can support the blocking layer 31, facilitating the reasonable setting of the gap between the blocking layer 31 and the second electrostatic layer 21. The materials of the first support layer 13 and the second support layer 32 can be OCA optical adhesive or UV adhesive.

[0071] Specifically, such as Figure 7 and Figure 9 As shown, the aforementioned barrier layer 31 can be a rigid baffle, which can effectively limit the height of the arching of the second electrostatic layer 21 on the side of the second electrostatic layer 21 away from the first electrostatic layer 12, such as... Figure 8 and Figure 10 As shown, the material of the barrier layer 31 can be silicon wafers or the like. Optionally, the barrier layer 31 can also be a flexible baffle. However, the flexibility of the barrier layer 31 needs to be less than that of the second electrostatic layer 21 to ensure that the arching height of the barrier layer 31 on the second electrostatic layer 21 is limited. The material of the barrier layer 31 is not limited here and depends on the actual situation.

[0072] Optionally, such as Figure 11 As shown, Figure 11 The middle blocking layer 31 can also be a third electrostatic layer, on which the same voltage as the second electrostatic layer 21 can be applied. When the electrostatic valve is open, no voltage is applied between the first electrostatic layer 12 and the second electrostatic layer 21. The same voltage is applied to the second electrostatic layer 21 and the third electrostatic layer, providing electrostatic repulsion. This allows a certain force to be applied to the second electrostatic layer 21, ensuring that the height of the arching of the second electrostatic layer 21 is within its own elastic recovery range. Figure 12 As shown; when the electrostatic valve needs to be closed, there is a voltage difference between the first electrostatic layer 12 and the second electrostatic layer 21. The same voltage is applied to the second electrostatic layer 21 and the third electrostatic layer. Due to electrostatic action, the second electrostatic layer 21 arches towards the first electrostatic layer 12, thus closing the electrostatic valve. Figure 13 As shown.

[0073] Optionally, such as Figure 9 and Figure 11 As shown, Figure 9 and Figure 11 A second air passage can be formed between the middle barrier layer 31 and the second electrostatic layer 21. By introducing airflow into the second air passage, the arching height of the second electrostatic layer 21 can also be limited.

[0074] For example, when the electrostatic valve is opened, airflow can pass between the second electrostatic layer 21 and the barrier layer 31. The airflow can apply a certain pressure to the second electrostatic layer 21, ensuring that the second electrostatic layer 21 remains within its own elastic recovery range. Figure 12 As shown; and when the electrostatic valve needs to be closed, such as Figure 13 As shown, no airflow may be introduced between the second electrostatic layer 21 and the barrier layer 31. The valve can be closed by the electrostatic attraction between the first electrostatic layer 12 and the second electrostatic layer 21. Alternatively, a larger airflow than when the electrostatic valve is open may be introduced between the second electrostatic layer 21 and the barrier layer 31 to apply pressure to the second electrostatic layer 21 toward the first electrostatic layer 12, thereby assisting the electrostatic valve in closing and ensuring that the electrostatic valve closes successfully.

[0075] Among them, such as Figure 11 As shown, the barrier layer 31 may include a support substrate 312 and a third metal layer 311 stacked along the arrangement direction of the first valve mechanism 1 and the second valve mechanism 2; when the barrier layer 31 is a third electrostatic layer, it is achieved by applying a voltage to the third metal layer 311. The support substrate 312 may be a rigid substrate.

[0076] In one possible implementation, such as Figure 14 , Figure 15 and Figure 17 As shown, the second valve mechanism 2 also includes a second rigid substrate 22 disposed opposite to the first electrostatic layer 12. A first airflow channel is formed between the second rigid substrate 22 and the first electrostatic layer 12. The second rigid substrate 22 has a first through-hole 201. The orthographic projection of the second electrostatic layer 21 onto the second rigid substrate 22 covers the first through-hole 201, and the edge of the second electrostatic layer 21 is fixedly connected to the second rigid substrate 22. When the electrostatic valve is open, there is no electrostatic force between the first electrostatic layer 12 and the second electrostatic layer 21. Since the direction of the incoming airflow is parallel to the plane extending from the second electrostatic layer 21, the horizontal airflow has less impact on the second electrostatic layer 21 than the vertical airflow. When the electrostatic valve needs to be closed, there is electrostatic force between the first electrostatic layer 12 and the second electrostatic layer 21. Because the second electrostatic layer 21 arches towards the first electrostatic layer 12, blocking the first airflow channel, the air pressure in the first airflow channel gradually increases, affecting the closing of the electrostatic valve. The materials of the first rigid substrate 11 and the second rigid substrate 22 can be silicon wafers, glass, etc.

[0077] Specifically, such as Figure 14 and Figure 15 As shown, the second rigid substrate 22 may have a second through hole 201; the deformation limiting part 3 includes a flexible pressure relief layer 33, the orthographic projection of the flexible pressure relief layer 33 on the second rigid substrate 22 covers the second through hole 201, and the edge of the flexible pressure relief layer 33 is fixedly connected to the second rigid substrate 22. Figure 16 As shown, when the electrostatic valve is closed, the second electrostatic layer 21 arches towards the first electrostatic layer 12, blocking the first air passage. The air pressure in the first air passage gradually increases, and the flexible pressure relief layer 33 can be pushed outward from the first air passage, which can help coordinate the pressure in the first air passage, so that the electrostatic valve can close better.

[0078] Optionally, such as Figure 17 As shown, the first rigid substrate 11 may have a third through hole 102, and the orthographic projection of the third through hole 102 on the first rigid substrate 11 does not overlap with the orthographic projection of the first electrostatic layer 12 on the first rigid substrate 11; the deformation limiting part 3 may include a third support layer 34, a pressure relief substrate 35, and a pressure relief part 36; the third support layer 34 is located on the side of the first rigid substrate 11 away from the first electrostatic layer 12, and the third support layer 34 has a pressure relief through hole 301, the orthographic projection of the pressure relief through hole 301 on the first rigid substrate 11 covering the third through hole 102; the pressure relief substrate 35 is located on the side of the third support layer 34 away from the first rigid substrate 11, and there is a pressure relief flow channel between the pressure relief substrate 35 and the third support layer 34 communicating with the pressure relief through hole 301; the pressure relief part 36 is disposed at the pressure relief through hole 301, and when the first electrostatic layer 12 abuts against the second electrostatic layer 21, the pressure relief part 36 can be opened to relieve pressure.

[0079] When the electrostatic valve is open, there is no electrostatic force between the first electrostatic layer 12 and the second electrostatic layer 21. Because the first air passage is relatively wide, the airflow mainly flows through it. Since the airflow passes horizontally through the first air passage, its impact on the second electrostatic layer 21 is minimal. However, when the electrostatic valve needs to be closed, such as... Figure 18 As shown, an electrostatic force is applied between the first electrostatic layer 12 and the second electrostatic layer 21. The second electrostatic layer 21 arches towards the first electrostatic layer 12, blocking the first air passage. The air pressure in the first air passage gradually increases, and the pressure relief part 36 can be opened. The airflow in the first air passage can be led out through the pressure relief passage to relieve pressure, helping to coordinate the pressure in the first air passage and enabling the electrostatic valve to close better.

[0080] Specifically, the material of the third support layer 34 can be OCA optical adhesive or UV adhesive, etc., and the pressure relief substrate 35 can be silicon wafer, glass, etc.

[0081] Specifically, the aforementioned pressure relief section 36 may include a flexible sealing layer 361, a pressure relief pipe 362, and a limiting layer 363; the flexible sealing layer 361 is sealed to the side wall of the pressure relief through hole 301, and the flexible sealing layer 361 has a connecting through hole; the first end of the pressure relief pipe 362 is sealed to the edge of the connecting through hole; the limiting layer 363 is located on the side of the first rigid substrate 11 away from the first electrostatic layer 12 and is located inside the pressure relief through hole 301, the limiting layer 363 is opposite to the second end of the pressure relief pipe 362, and the limiting layer 363 can attract the second end of the pressure relief pipe 362 so that the second end of the pressure relief pipe 362 abuts against the limiting layer 363; when the first electrostatic layer 12 abuts against the second electrostatic layer 21, and the air pressure in the first air passage reaches a preset pressure, the second end of the pressure relief pipe 362 can detach from the limiting layer 363.

[0082] When the electrostatic valve is open, the limiting layer 363 exerts a certain attraction on the pressure relief pipe 362, causing the second end of the pressure relief pipe 362 to abut against the limiting layer 363, thus achieving a sealed state at the pressure relief through hole 301. When the electrostatic valve is closed, the air pressure in the first air passage gradually increases, and the pressure relief pipe 362 can be lifted up under the high pressure in the first air passage. Figure 18 As shown, this separates it from the limiting layer 363, allowing the airflow in the first air passage to be drawn out through the pressure relief pipe 362 and the pressure relief channel for pressure relief, which helps to coordinate the pressure in the first air passage and allows the electrostatic valve to close better.

[0083] Obviously, those skilled in the art can make various modifications and variations to the embodiments of the present invention without departing from the spirit and scope of the invention. Therefore, if these modifications and variations fall within the scope of the claims of the present invention and their equivalents, the present invention also intends to include these modifications and variations.

Claims

1. An electrostatic valve, characterized in that, include: A first valve mechanism, the first valve mechanism including a first rigid substrate and a first electrostatic layer located on the first rigid substrate; The second valve mechanism is opposite to the side of the first valve mechanism where the first electrostatic layer is located. The second valve mechanism and the first valve mechanism cooperate to form a first air passage. The second valve mechanism includes a second electrostatic layer disposed opposite to the first electrostatic layer. The second electrostatic layer can be bent and deformed toward the first electrostatic layer due to electrostatic attraction. When the second electrostatic layer is bent and deformed to abut against the first electrostatic layer, the first air passage can be closed. A deformation limiting part is provided to limit the bending deformation of the second electrostatic layer along the arrangement direction of the first valve mechanism and the second valve mechanism. The second valve mechanism further includes a second rigid substrate disposed opposite to the first electrostatic layer. The second rigid substrate and the first electrostatic layer have the first air passage. The second rigid substrate has a first through hole. The orthographic projection of the second electrostatic layer on the second rigid substrate covers the first through hole. The edge of the second electrostatic layer is fixedly connected to the second rigid substrate.

2. The electrostatic valve according to claim 1, characterized in that, The first electrostatic layer includes a first metal layer located on the first rigid substrate and an insulating layer located on the side of the first metal layer facing away from the first rigid substrate. The second electrostatic layer includes a flexible substrate and a second metal layer stacked along the arrangement direction of the first valve mechanism and the second valve mechanism.

3. The electrostatic valve according to claim 1, characterized in that, The second rigid substrate has a second through hole; The deformation limiting part includes a flexible pressure relief layer, the orthographic projection of which covers the second through hole on the second rigid substrate, and the edge of which is fixedly connected to the second rigid substrate.

4. The electrostatic valve according to claim 1, characterized in that, The first rigid substrate has a third through hole, and the orthographic projection of the third through hole on the first rigid substrate does not overlap with the orthographic projection of the first electrostatic layer on the first rigid substrate. The deformation limiting part includes a third support layer, a pressure relief substrate, and a pressure relief part; The third support layer is located on the side of the first rigid substrate away from the first electrostatic layer. The third support layer has a pressure relief through hole, and the orthogonal projection of the pressure relief through hole on the first rigid substrate covers the third through hole. The pressure relief substrate is located on the side of the third support layer away from the first rigid substrate, and there is a pressure relief flow channel between the pressure relief substrate and the third support layer that communicates with the pressure relief through hole; The pressure relief section is located at the pressure relief through hole. When the first electrostatic layer and the second electrostatic layer come into contact, the pressure relief section can be opened to relieve pressure.

5. The electrostatic valve according to claim 4, characterized in that, The pressure relief section includes a flexible sealing layer, a pressure relief pipe, and a limiting layer; The flexible sealing layer is sealed to the sidewall of the pressure relief through hole, and the flexible sealing layer has a connection through hole; The first end of the pressure relief pipe is sealed to the edge of the connecting through hole; The limiting layer is located on the side of the first rigid substrate away from the first electrostatic layer and is located in the pressure relief through hole. The limiting layer is opposite to the second end of the pressure relief tube, and the limiting layer can attract the second end of the pressure relief tube so that the second end of the pressure relief tube abuts against the limiting layer. When the first electrostatic layer and the second electrostatic layer come into contact, and the air pressure in the first air passage reaches the preset pressure, the second end of the pressure relief pipe can be detached from the limiting layer.

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