A grating type electro-optic tunable filter directly formed with a waveguide structure by a metal bottom electrode

Abstract

A grating type electro-optical adjustable filter directly formed by a metal bottom electrode belongs to the technical field of functional photon chip and is characterized by comprising a substrate layer, a lower cladding layer, a core layer, a bottom electrode layer and an electro-optical material layer, wherein the core layer, the bottom electrode layer and the electro-optical material layer are located above the lower cladding layer; the core layer is a center-symmetrical inverted ridge type structure and is composed of a flat plate layer and a ridge layer located below the flat plate layer, the ridge layer is composed of a single-mode straight waveguide input area, a Bragg grating area and a single-mode straight waveguide output area; and the bottom electrode layer is divided into two center-symmetric structures by the ridge layer. The preparation method is simple, the waveguide structure can be realized by the metal definition cladding technology, and no dry etching process is needed. Compared with the traditional method, the core layer is not operated except for heat curing, the device effect is stable, the polymer electro-optical waveguide chip can effectively reduce the relaxation phenomenon, the service life of the device is enhanced, the response speed is faster and the bandwidth is larger.

Description

Technical Field

[0001] This invention belongs to the field of functional photonic chip technology, specifically relating to a grating-type electro-optic tunable filter that directly forms a waveguide structure through a metal bottom electrode. Background Technology

[0002] Tunable filters are key optical integrated devices in optical communication systems, serving as functional nodes for optical interconnects, optical information exchange, and optical signal switching networks. They play a crucial role in fields such as big data centers, 5G communication, and quantum computing. Compared to devices like thermo-optical tunable filters, electro-optical tunable filters offer significantly faster response times, typically on the nanosecond to picosecond scale, along with larger bandwidths and ease of optoelectronic integration, making them highly sought after in high-speed optical transmission systems. Electro-optical tunable filters primarily rely on the electro-optic effect of nonlinear waveguide materials to achieve their rapid response. However, current electro-optical tunable filters based on inorganic nonlinear materials are increasingly unable to meet the bandwidth requirements of high-speed optical communication networks due to their high cost, complex manufacturing processes, and low electro-optic coefficients. In contrast, electro-optical tunable filters based on organic electro-optic polymers are gaining increasing attention and show great market potential due to their high cost-effectiveness, simple manufacturing processes, and high electro-optic coefficients. Summary of the Invention

[0003] The purpose of this invention is to address the shortcomings of existing tunable filter technologies by proposing a grating-type electro-optic tunable filter that directly forms a waveguide structure through a metal bottom electrode. By spin-coating electro-optic material onto the bottom electrode pattern, the waveguide structure of the device can be directly defined. Utilizing the electro-optic effect generated after corona polarization of the waveguide material, an electrically controlled tunable filtering function is achieved, thereby overcoming the shortcomings of existing tunable filters, such as low tuning efficiency, slow tuning rate, and complex fabrication processes.

[0004] The present invention discloses a grating-type electro-optic tunable filter that directly forms a waveguide structure through a metal bottom electrode, employing a coplanar traveling wave electrode, as shown in the attached figure. Figure 1As shown in (a), from bottom to top, it consists of a substrate layer 1, a lower cladding layer 2, a core layer 3, a bottom electrode layer 4, and an electro-optic material layer 5. The core layer 3, the bottom electrode layer 4, and the electro-optic material layer 5 are all located on the lower cladding layer 2. Along the direction of light transmission, the core layer 3 has a centrally symmetrical inverted ridge structure, consisting of a flat plate layer and a ridge layer located below the flat plate layer. The ridge layer consists of three parts: a single-mode straight waveguide input region 10, a Bragg grating region 11, and a single-mode straight waveguide output region 12. The bottom electrode layer 4 consists of the ridge layer located on the core layer 3. The system comprises waveguide electrode regions on both sides and contact electrode regions 13 exposed to the air on both sides of the electro-optic material layer 5 for contact with external power leads. The waveguide electrode regions and contact electrode regions 13 are connected by a narrow strip-shaped electrode layer. The waveguide electrode regions are encased between the core layer 3 and the electro-optic material layer 5, and the upper surface of the waveguide electrode regions is covered by the flat plate layer of the core layer 3. The electro-optic material layer 5 has the same thickness as the core layer 3 and is located on both sides of the core layer 3 and inside the contact electrode regions 13. (See attached...) Figure 1 As shown in (b) (the core layer 3 and the electro-optic material layer 5 are not shown for easy observation), the bottom electrode layer 4 is divided into two centrally symmetrical parts by the ridge layer.

[0005] The Bragg grating region 11 is a multi-period grating structure. One grating period Λ consists of one wide (defined as the length in the direction of light propagation, and the width in the same horizontal plane perpendicular to the direction of light propagation) waveguide core layer and one narrow waveguide core layer, as shown in the attached figure. Figure 1 As shown in (c), the width of the wide waveguide core layer is W1, the width of the narrow waveguide core layer is W2, and the tooth depth between the wide waveguide core layer and the narrow waveguide core layer is Δh = (W1-W2) / 2 (here the core layer width and tooth depth are the width and tooth depth of the equivalent core layer region a, the range of the equivalent core layer region a will be given later).

[0006] This invention appendix Figure 1 The cross-section at β of the grating-type tunable filter described in (a) with the waveguide structure directly formed by the metal bottom electrode is shown in the attached figure. Figure 1 As shown in (d), from bottom to top, it consists of a substrate layer 1, a lower cladding layer 2, a core layer 3, a bottom electrode layer 4, and an electro-optic material layer 5; the core layer 3 has an inverted ridge structure and uses air as the upper cladding layer of the core layer 3.

[0007] The substrate layer 1 material described in this invention is any one of indium phosphide, gallium arsenide, and silicon.

[0008] The material of the lower cladding layer 2 described in this invention is any one of SU-8, NOA61, polymethyl methacrylate (PMMA), and silicon dioxide (SiO2).

[0009] The core layer 3 material described in this invention is a polarized host-guest doped polymer electro-optic material. The host polymer material is any one of polymethyl methacrylate (PMMA), amorphous polycarbonate (APC), EpoClad, EpoCore, and SU-8. The guest material is an electro-optically active chromophore molecule, which is any one of Disperse Red 1 (DR1), Disperse Red 13 (DR13), Disperse Red 19 (DR19), azo tricyanofuran (N-TCF), and AJLS102. The mass of the electro-optically active chromophore molecule is 5-25% of the mass of the core layer 3.

[0010] The bottom electrode layer 4 of the present invention is made of any one of gold, silver, or aluminum.

[0011] The electro-optic material layer 5 and the core layer 3 described in this invention are made of the same material.

[0012] As attached Figure 2 As shown in (a) and (b), the structural principle of the present invention is explained using a straight waveguide as an example. The structure of the present invention adopts the form of a waveguide structure directly formed by a metal bottom electrode. The waveguide is composed of an equivalent core region a and an equivalent cladding region b. The effective refractive index 1 of the waveguide is calculated by the Macatelli approximation method. The transmission conditions of the transverse magnetic and transverse electric fundamental modes of the waveguide are analyzed using transcendental equations, and the refractive indices N of the equivalent core region a and the equivalent cladding region b are obtained. core and N clad The relationship between the overall effective refractive index N of the waveguide structure is as follows (Wang CX, Zhang DM, Zhang XC, et al. Bottom-metal-printed thermo-optic waveguide switches based on low-loss fluorinated polycarbonate materials[J]. Opt. Express, 2020, 28(14): 20773–20784.):

[0013]

[0014] w represents the width of the bottom electrode layer 4, meaning the width of the equivalent cladding region b is the width of the bottom electrode layer 4, which can be measured using an optical microscope; N core and N clad where are the equivalent refractive indices of the equivalent core region a and the equivalent cladding region b, respectively, and can be calculated using the Macatelli approximation method; N is the overall effective refractive index of the waveguide structure directly formed through the metal bottom electrode. When the order k0 = 0 and q = 1, the equation corresponds to the TE mode; when the order k0 = 1 and q = 0, the equation corresponds to the TM mode.

[0015] The signal light used in the grating-type electro-optic tunable filter of this invention, which uses a waveguide structure directly formed by a metal bottom electrode, originates from an external laser and is introduced into the core layer 3 via end-face coupling. When an external electric field is applied, a voltage is applied to the two electrodes in the electrode structure region D, with one end connected to ground and the other end connected to a positive bias voltage. When the grating-type electro-optic tunable filter of this invention, which uses a waveguide structure directly formed by a metal bottom electrode, is in operation, as shown in the attached diagram... Figure 1 As shown in (b), after the signal light is input through the port in the input region 10, the forward propagation mode and the reverse mode are coupled at the Bragg grating region 11. After being output through the port in the output region 12, there will be a significant reflection peak in the reflection spectrum. If an external voltage is applied in the electrode structure region D, due to the decrease in refractive index of the equivalent core layer region a of the electro-optic waveguide, the reflection peak in the reflection spectrum will undergo a blue shift (shift towards the shorter wavelength direction) after being output through the port in the output region 12.

[0016] The forward propagation mode described in this invention is a mode in which the direction of the diffracted wave vector is the same as the direction of the incident wave vector when the wavelength range of the incident light rays diffracts sequentially from low wavelength to high wavelength; the reverse propagation mode is a mode in which the direction of the diffracted wave vector is opposite to the direction of the incident wave vector when the wavelength range of the incident light rays diffracts sequentially from high wavelength to low wavelength.

[0017] Compared with existing device structures and fabrication techniques, the advantages of this invention are:

[0018] (1) Compared with existing tunable filters, the fabrication method of this invention is simple, and the waveguide structure can be realized through metal-defined cladding technology without the need for dry etching and other processes. This technology provides a new direction for the development of optical waveguide integrated chips and has broad market prospects.

[0019] (2) Compared with existing tunable filters, the present invention uses the bottom electrode for modulation. Compared with the traditional method, no operation other than thermal curing is performed on the core layer, which makes the device stable and can effectively reduce the lag phenomenon of polymer electro-optic waveguide chips and enhance the service life of the device.

[0020] (3) Compared with existing tunable filters, the bottom electrode of the device made in this invention can be used to define the waveguide cladding by the effective refractive index method, and an external voltage can be applied to the bottom electrode to regulate the device. It is easy to operate and has a novel structure.

[0021] (4) Compared with existing tunable filters, the electrodes of the device proposed in this invention are not exposed on the surface. During polarization, the electrodes can be effectively avoided, which greatly improves the yield.

[0022] (5) Compared with existing tunable filters, the device made in this invention is electro-optic modulated, which has a faster response speed and a larger bandwidth than thermo-optic modulated. Attached Figure Description

[0023] Figure 1 Figure 1 is a schematic diagram of the structure of a grating-type electro-optic tunable filter with a waveguide structure directly formed by a metal bottom electrode, as described in this invention. Figure 2(a) is a three-dimensional schematic diagram of the grating-type tunable filter with a waveguide structure directly formed by a metal bottom electrode; Figure 3(b) is a top view of the grating-type tunable filter with a waveguide structure directly formed by a metal bottom electrode (the planar core layer 3 and the electro-optic material layer 5 are not shown for ease of observation); Figure 4(c) is a top view of the Bragg grating region 11 in Figure 4(b); Figure 5(d) is a schematic diagram of the grating-type tunable filter with a waveguide structure directly formed by a metal bottom electrode. Figure 1 (a) Schematic diagram of the cross section of the β surface.

[0024] Figure 2 Figure (a) is a schematic diagram of the grating-type tunable filter with waveguide structure directly formed by metal bottom electrode according to the present invention, using the Macatelli approximation method; Figure (b) is a cross-sectional view of the waveguide directly formed by metal bottom electrode; Figure (c) is a three-dimensional structural diagram with straight waveguide as an example.

[0025] Figure 3 Figure (a) is a schematic diagram of the device structure of Embodiment 1 of the present invention; Figure (a) shows the device of Embodiment 1 in... Figure 1 (a) is a cross-sectional schematic diagram of the β-plane; Figure (b) is a top view of Example 1 (the core layer 3 and the electro-optic material layer 5 are not shown for easy observation).

[0026] Figure 4 This is a graph showing the relationship between the applied voltage (0 to +2.5V) in electrode structure region D and the change in refractive index of core layer 3 in Embodiment 1 of the present invention.

[0027] Figure 5 This is a graph showing the reflection spectrum of the tunable filter in Embodiment 1 of the present invention as a function of the applied external voltage (0-2.45V) in the wavelength range of 1515-1555nm.

[0028] Figure 6 This is a process flow diagram of the fabrication process of the device in Embodiment 1 of the present invention. Detailed Implementation

[0029] The present invention will now be described more clearly and comprehensively with reference to the accompanying drawings. Those skilled in the art will gain a deeper understanding of the advantages and functions of the present invention from this description. However, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0030] Example 1:

[0031] In this embodiment, the substrate layer 1 is a silicon substrate with a thickness of 500 μm.

[0032] In this embodiment, the lower cladding layer 2 is selected as silicon dioxide with a thickness of 10 μm.

[0033] In this embodiment, the host-guest doped polarized polymer electro-optic material used in the core layer 3 is AJLS102 / APC. The electro-optic active chromophore molecule is AJLS102, and the polymer host material is APC (polycarbonate, an amorphous, tasteless, odorless, non-toxic, and transparent thermoplastic polymer). The chromophore structure of AJLS102 is shown in the following formula. For its preparation method and experimental spectrum, please refer to the reference (Song R, Yick A, Steier W H. Conductivity-dependency-free in-planepoling for Mach-Zehnder modulator with highly conductive electro-optic polymer[J].APPLIED PHYSICS LETTERS,2007,90(19):3136).

[0034]

[0035] In this embodiment, the mass of the electro-optically active chromophore AJLS102 powder used in the core layer 3 material is 20% of the sum of the mass of the chromophore AJLS102 powder and the mass of the polymer host material APC. The synthesized polarized host-guest doped polymer electro-optic material is AJLS102 / APC, with an electro-optic coefficient of 84 pm / V.

[0036] As attached Figure 3 As shown, in this embodiment, the core layer 3 has an inverted ridge structure, consisting of a flat plate layer and a ridge layer located below the flat plate layer. The total height of the flat plate layer and the ridge layer is 5 μm, and the total width is 54 μm. The width W1 of the wide waveguide core layer is 12 μm, the width W2 of the narrow waveguide core layer is 4 μm, and the tooth depth Δh on both sides of the narrow waveguide core layer is 4 μm. The bottom electrode layer 4 and the ridge layer have the same thickness of 50 nm. The bottom electrode layer 4 is a metal aluminum layer with a width of 25 μm. The overall length of the grating-type electro-optic tunable filter is 1000 μm, one grating period Λ is 3.545 μm, the duty cycle is 50%, and the size of the electrode structure region D is 200 μm × 200 μm. The ridge layer consists of three parts: a single-mode straight waveguide input region 10, a Bragg grating region 11, and a single-mode straight waveguide output region 12, with lengths of 181 μm, 638 μm, and 181 μm, respectively.

[0037] In this embodiment, the photomask 8 is the same as the bottom electrode layer 4 and electrode structure region D to be prepared.

[0038] The basic synthesis method of the host-guest doped polarized polymer electro-optic material AJLS102 / APC described in this embodiment is as follows:

[0039] 1. Take 3g of electro-optically active chromophore AJLS102 powder and place it in a clean weighing bottle. Then add 40g of amorphous polycarbonate (APC) solution. The solvent used is tetrahydrofuran, and the mass of APC accounts for 30% of the total solution.

[0040] 2. Wrap the weighing bottle in tin foil and place it in an ultrasonic cleaner in a dark environment. Stir it ultrasonically at 45°C for 6 hours to completely and evenly disperse the electro-optically active chromophore AJLS102 powder in the APC solution, thus obtaining the host-guest doped polymer electro-optic material AJLS102 / APC.

[0041] In this embodiment, the center wavelength is selected as 1550nm.

[0042] The refractive index of the core layer 3 material used in this embodiment is 1.54 at a wavelength of 1550nm.

[0043] This embodiment uses Rsoft software to simulate the relationship between the applied electric field and the refractive index change of the host-guest doped polarized polymer electro-optic material AJLS102 / APC when an external electric field is applied. Figure 4 In the diagram, the solid line represents the simulation results from Rsoft software, and the dashed line represents the linear fitting results. As the applied voltage at electrode structure region D gradually increases, the refractive index of the polymer electro-optic material in the equivalent core layer region a decreases linearly with a slope of approximately -0.01138. In summary, by changing the applied voltage at electrode structure region D, the refractive index change of the electro-optic material in the equivalent core layer region a can be controlled, thus realizing the adjustable filtering function of the device.

[0044] This embodiment simulates the tunable filtering function of a device fabricated using the host-guest doped polarized polymer electro-optic material AJLS102 / APC using Rsoft software. The relationship between the reflection peak in the reflection spectrum of the tunable filter and the applied voltage was simulated, as shown in the attached diagram. Figure 5 It can be seen that after inputting broadband light, as the applied voltage increases, the refractive index of the electro-optic material in the equivalent core region a gradually decreases due to the electro-optic effect, and the reflection peak of the output reflection spectrum blue-shifts (moves towards shorter wavelengths). When no voltage is applied, the center wavelength of the reflection peak in the reflection spectrum is 1550 nm, and the 3dB bandwidth is 2.19 nm. For every 1 V increase in applied voltage, the reflection peak in the reflection spectrum blue-shifts by 12.24 nm towards shorter wavelengths, that is, the tuning efficiency is 12.24 nm / V. When a voltage of 2.45 V is applied, the center wavelength of the reflection peak blue-shifts by about 30 nm, and the 3dB bandwidth is 1.69 nm. Although the 3dB bandwidth decreases, it is still greater than 1.6 nm.

[0045] The fabrication method of the grating-type electro-optic tunable filter in this embodiment, which directly forms a waveguide structure through a metal bottom electrode, is as follows: Figure 6 As shown, the specific description is as follows:

[0046] A. Using monocrystalline silicon as substrate layer 1 and a silicon dioxide layer grown on substrate layer 1 as lower cladding layer 2, the silicon dioxide surface is first cleaned by placing the silicon wafer in a beaker containing acetone solution and ultrasonically cleaning it for 10 minutes. Then, it is placed in a beaker containing isopropanol solution and ultrasonically cleaned for 10 minutes. Next, it is placed in a beaker containing deionized water and ultrasonically cleaned for 10 minutes. After removal, the surface of the silicon dioxide is dried with a nitrogen gun. Finally, it is placed in a glass container and dried in an oven (150℃, 30min) to remove moisture and organic impurities from the silicon dioxide surface.

[0047] B. Place the cleaned components in the aluminum evaporation stage, and evaporate them under a vacuum of 6×10⁻⁶. -3 Under the condition of Pa, a current of 37.5mA was applied to evaporate a 60nm thick aluminum layer on the cleaned silica surface.

[0048] C. Spin-coat positive photoresist BP212 onto aluminum layer 6 (spin-coating speed: 3000 rpm, time: 20 seconds). Immediately after spin-coating, pre-bake on a hot plate (87℃, 20 min). Then wash away the surface resist with NaOH solution (NaOH:H2O = 3g:1000g) to obtain BP212 thin film layer 7.

[0049] D. Place the chip, after removing the adhesive residue, under a photolithography machine at 20mW / cm². 2 After being exposed to a positive photomask 8 with the same pattern as the bottom electrode layer 4 for 3 seconds under the illumination of a high-power mercury ultraviolet lamp, it is then post-baked (92℃, 15min).

[0050] E. After post-baking, the chip is placed in a NaOH solution (NaOH:H2O = 3g:1000g) for development (25s) to remove part of the BP212 photoresist, leaving the mask structure 9 on the positive photomask 8.

[0051] F. Continue to place in the above NaOH solution to remove the aluminum film without the mask structure on the surface, then rinse the surface residue with deionized water, expose the device again under the photolithography machine for 10 seconds, and then clean off the mask structure 9, the remaining BP212 photoresist and residual substances with anhydrous ethanol to obtain the bottom electrode layer 4.

[0052] G. After shielding the electrode structure region D, spin-coat the host-guest doped polymer electro-optic material AJLS102 / APC onto the device with the prepared bottom electrode layer 4 (spin-coating speed: 3000 rpm, time: 20 s). Apply an initial voltage of 20 V between the bottom electrode layers 4 at an initial temperature of 50 °C, and then raise the temperature to 125 °C at a rate of 10 °C / min (the instrument used for the polarization material has a built-in heating function). When the temperature reaches 100 °C, slowly increase the polarization voltage to 100 V. When the temperature reaches 125℃, a polarization voltage of 100V is applied to cool the AJLS102 / APC film to room temperature, thus polarizing it (polarization will affect the core layer 3 and the electro-optic material layer 5. The basic principle of polarization is to heat the polymer film to near its glass transition temperature, causing the amorphous polymer to transition from the glass state to the elastic state. At this time, a strong external electric field is applied to the polymer film and maintained for a certain period of time. The chromophores contained in the polymer will be oriented in a certain direction according to the electric field. Then, heating is stopped and the film is slowly cooled. After it drops to near room temperature, the electric field is removed, causing the originally completely irregularly oriented chromophores to become macroscopically statistically non-centrosymmetric and frozen. Thus, the polarized polymer material will exhibit a second-order nonlinear optical effect when interacting with light). The film formed between and on the surface of the bottom electrode layer 4 is the core layer 3, and the film formed on the outside of the bottom electrode layer 4 is the electro-optic material layer 5, thereby preparing a grating-type electro-optic tunable filter with a waveguide structure directly formed by a metal bottom electrode.

Claims

1. A grating-type electro-optic tunable filter that directly forms a waveguide structure through a metal bottom electrode, characterized in that: The coplanar traveling wave electrode is adopted, and from bottom to top, it consists of a substrate layer (1), a lower cladding layer (2), a core layer (3), a bottom electrode layer (4), and an electro-optic material layer (5). The core layer (3), the bottom electrode layer (4), and the electro-optic material layer (5) are all located on the lower cladding layer (2). Along the direction of light transmission, the core layer (3) is a centrally symmetrical inverted ridge structure, consisting of a flat plate layer and a ridge layer located below the flat plate layer. The ridge layer consists of three parts: a single-mode straight waveguide input region (10), a Bragg grating region (11), and a single-mode straight waveguide output region (12). The bottom electrode layer (4) consists of waveguide electrode regions located on both sides of the ridge layer of the core layer (3) and an electro-optic material layer located on the bottom electrode layer (5). The optical material layer (5) consists of two contact electrode areas (13) exposed to the air on both sides for contact with external power supply leads. The waveguide electrode area and the contact electrode area (13) are connected by a narrow strip electrode layer. The waveguide electrode area is covered between the core layer (3) and the electro-optic material layer (5). The upper surface of the waveguide electrode area is covered by the flat plate layer of the core layer (3). The electro-optic material layer (5) has the same thickness as the core layer (3). The electro-optic material layer (5) is located on both sides of the core layer (3) and inside the contact electrode area (13). The bottom electrode layer (4) is divided into two centrally symmetrical structures by the ridge layer, with air as the upper cladding layer of the core layer (3).

2. The grating-type electro-optic tunable filter as described in claim 1, wherein the waveguide structure is directly formed through a metal bottom electrode, is characterized in that: The Bragg grating region (11) is a multi-period grating structure. One grating period Λ consists of one wide waveguide core layer and one narrow waveguide core layer. The width of the wide waveguide core layer is W1, the width of the narrow waveguide core layer is W2, and the tooth depth between the wide waveguide core layer and the narrow waveguide core layer is Δh=(W1-W2) / 2.

3. The grating-type electro-optic tunable filter as described in claim 1, wherein the waveguide structure is directly formed by a metal bottom electrode, is characterized in that: The substrate layer (1) is made of any one of indium phosphide, gallium arsenide, and silicon; the lower cladding layer (2) is made of any one of SU-8, NOA61, polymethyl methacrylate, and silicon dioxide; the core layer (3) and the electro-optic material layer (5) are made of polarized host-guest doped polymer electro-optic materials, the host polymer material is any one of polymethyl methacrylate, amorphous polycarbonate, EpoClad, EpoCore, and SU-8, and the guest material is any one of electro-optically active chromophore molecules such as Disperse Red 1, Disperse Red 13, Disperse Red 19, azo tricyanofuran, and AJLS102, and the mass of the electro-optically active chromophore molecules is 5-25% of the mass of the core layer (3); the bottom electrode layer (4) is made of any one of gold, silver, and aluminum.

4. A grating-type electro-optic tunable filter with a waveguide structure directly formed by a metal bottom electrode as described in claim 3, characterized in that: The substrate (1) is a silicon substrate with a thickness of 500 μm, the lower cladding layer (2) is silicon dioxide with a thickness of 10 μm, and the core layer (3) and the electro-optic material layer (5) are made of polarized host-guest doped polymer electro-optic material AJLS102 / APC with an electro-optic coefficient of 84 pm / V; the total height of the planar layer and the ridge layer in the core layer (3) is 5 μm, and the total width is 54 μm; the width W1 of the wide waveguide core layer is 12 μm, the width W2 of the narrow waveguide core layer is 4 μm, and the tooth depth Δh on both sides of the narrow waveguide core layer is 4 μm; the bottom The electrode layer (4) and the ridge layer have the same thickness of 50 nm; the bottom electrode layer (4) is a metal aluminum layer with a width of 25 μm; the overall length of the grating-type electro-optic tunable filter is 1000 μm, one grating period Λ is 3.545 μm, the duty cycle is 50%, and the size of the electrode structure region (13) is 200 μm × 200 μm; the lengths of the ridge layer single-mode straight waveguide input region (10), the Bragg grating region (11), and the single-mode straight waveguide output region (12) are 181 μm, 638 μm, and 181 μm, respectively.

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