A large flow silane solar cell process tail gas treatment equipment and process system

Abstract

The application provides a large-flow silane solar cell process tail gas treatment equipment and a solar cell piece process system, relates to the technical field of tail gas treatment, and aims to solve the problems that the existing tail gas treatment equipment cannot meet the tail gas treatment requirements containing large-flow silane and the air inlet cavity is prone to blockage when treating the tail gas containing large-flow silane. The equipment comprises an air inlet pipe, a heating unit and a reaction cavity; the tail gas discharge port of the solar cell piece process system is directly supplied into the reaction cavity through the air inlet pipe; the heating unit is arranged in the reaction cavity and is used for heating the tail gas in the reaction cavity; and the tail gas is subjected to oxidation combustion in the reaction cavity. The application can be used for tail gas treatment of large-flow silane solar cell piece manufacturing processes.

Description

Technical Field

[0001] This invention relates to the field of exhaust gas treatment technology, and in particular to an exhaust gas treatment device and process system for high-flow-rate silane solar cell manufacturing. Background Technology

[0002] With the continuous advancement of technology and processes in the photovoltaic industry, the SiH4 flow rate generated by the TOPCon (Tunnel Oxide Passivated Contact Solar Cell) process is approximately 1.5 to 4 times that of the PERC process. This will significantly increase the risk of blockage in existing plasma exhaust gas treatment equipment. At the same time, with the increase in SiH4 flow rate, the original reaction chamber cannot fully combust and treat the same amount of exhaust gas, resulting in the treatment efficiency failing to meet the requirements for treating exhaust gas containing large flow rates of silane.

[0003] In addition, due to the high SiH4 content, a large amount of dust is generated during the process. Some of the dust will be deposited in the air inlet chamber. Since the volume of the air inlet chamber is small, usually only 1 / 5 of the volume of the reaction chamber, the air inlet chamber is very easy to be blocked, requiring shutdown for cleaning, resulting in a short equipment maintenance cycle. Summary of the Invention

[0004] The purpose of this invention is to provide a high-flow-rate silane solar cell process exhaust gas treatment device and process system to solve the problems that existing exhaust gas treatment devices cannot meet the treatment requirements of exhaust gas containing high flow rates of silane and that the inlet chamber is easily blocked when treating exhaust gas containing high flow rates of silane, thereby extending the equipment maintenance cycle.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] This invention provides a high-flow-rate silane solar cell process exhaust gas treatment device, including an inlet pipe, a heating unit, and a reaction chamber; the exhaust gas outlet of the solar cell process system is directly supplied into the reaction chamber through the inlet pipe; the heating unit is located in the reaction chamber and is used to heat the exhaust gas in the reaction chamber; the exhaust gas undergoes oxidation and combustion in the reaction chamber.

[0007] Furthermore, the heating unit is a plasma flame generator; and / or, the high-flow-rate silane solar cell process exhaust gas treatment equipment also includes a water washing spray unit, with the gas outlet of the reaction chamber connected to the water washing spray unit.

[0008] Furthermore, it also includes an air inlet end cap, which includes a cover body. The cover body is located at the top opening of the reaction chamber, and an exhaust gas delivery hole is provided on the cover body. The air inlet pipe is connected to the reaction chamber through the exhaust gas delivery hole.

[0009] Furthermore, the intake pipe and exhaust gas delivery port are perpendicular to the surface of the cover.

[0010] Furthermore, the heating unit is located on the lower end face of the cover facing the reaction chamber.

[0011] Furthermore, the heating unit is located at the center of the lower end face of the cover.

[0012] Furthermore, it also includes a DC flange located between the air inlet end cap and the reaction chamber. The air inlet end cap is connected to the reaction chamber via the DC flange, which is used to supply reaction gas into the reaction chamber.

[0013] Furthermore, it also includes a cyclone dehumidifier, which includes a cyclone vane, located at the air inlet of the exhaust pipe of the high-flow-rate silane solar cell process exhaust gas treatment equipment.

[0014] The present invention also provides a high-flow-rate silane solar cell process system, including the above-mentioned high-flow-rate silane solar cell process exhaust gas treatment equipment.

[0015] Furthermore, the average flow rate of SiH4 in the exhaust gas entering each high-flow-rate silane solar cell process exhaust gas treatment equipment is 3–6 L / min, and the peak flow rate is 10–20 L / min.

[0016] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects.

[0017] A) The high-flow-rate silane solar cell process exhaust gas treatment equipment provided by the present invention eliminates the air inlet chamber between the air inlet pipe and the reaction chamber, and sets a heating unit in the reaction chamber so that the exhaust gas can be oxidized and burned efficiently in the reaction chamber.

[0018] B) Since the volume of the reaction chamber is much larger than that of the air inlet chamber, eliminating the air inlet chamber eliminates the problem of air inlet chamber blockage. Similarly, the large volume of the reaction chamber also means that blockage is unlikely to occur. This extends the cleaning and maintenance cycle of the reaction chamber, reduces equipment cleaning and maintenance costs, and helps improve production efficiency and reduce production costs.

[0019] C) Compared to the process of first passing through the inlet chamber and then undergoing oxidation and combustion in the reaction chamber, the exhaust gas treatment device of the present invention allows the exhaust gas to undergo efficient oxidation and combustion in the reaction chamber, thereby greatly improving the treatment efficiency of exhaust gas in the manufacturing process of high-flow silane solar cells.

[0020] In this invention, the above-described technical solutions can be combined with each other to achieve more preferred combinations. Other features and advantages of this invention will be set forth in the following description, and some advantages may become apparent from the description or be learned by practicing the invention. The objects and other advantages of this invention can be realized and obtained through the embodiments described and the accompanying drawings, which are particularly pointed out. Attached Figure Description

[0021] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Throughout the drawings, the same reference numerals denote the same parts.

[0022] Figure 1 This is a three-dimensional structural diagram of the air inlet end cap in the high-flow-rate silane solar cell process tail gas treatment equipment provided in Embodiment 1 of the present invention;

[0023] Figure 2 This is a schematic diagram of the three-dimensional structure of the cover body in the high-flow-rate silane solar cell process tail gas treatment equipment provided in Embodiment 1 of the present invention;

[0024] Figure 3 for Figure 1 Top view of the structure;

[0025] Figure 4 for Figure 3 A schematic diagram of the CC cross-section;

[0026] Figure 5 This is a front view schematic diagram of the tail gas treatment equipment for high-flow silane solar cell process provided in Embodiment 1 of the present invention;

[0027] Figure 6 This is a schematic diagram of the DC flange in the high-flow-rate silane solar cell process tail gas treatment equipment provided in Embodiment 1 of the present invention;

[0028] Figure 7 for Figure 6 Enlarged view of part A;

[0029] Figure 8 This is a schematic diagram of the cyclone dehumidifier in the high-flow-rate silane solar cell process tail gas treatment equipment provided in Embodiment 1 of the present invention;

[0030] Figure 9 This is a schematic diagram of the first type of cooperation between the adjusting protrusion, the second arc-shaped through hole, and the blade in the high-flow-rate silane solar cell process tail gas treatment equipment provided in Embodiment 1 of the present invention, wherein the blade is in a horizontal state;

[0031] Figure 10 This is a schematic diagram of the second type of cooperation between the adjusting protrusion, the second arc-shaped through hole, and the blade in the high-flow-rate silane solar cell process tail gas treatment equipment provided in Embodiment 1 of the present invention, wherein the blade is in an inclined state.

[0032] Figure label:

[0033] 10-DC flange; 11-Gas storage ring cavity; 11a-First cavity section; 11b-Slit; 11c-Second cavity section; 12-Inlet port; 121-Counterhead; 13-Airflow ring channel; 14-Boss; 15-First flange; 20-Reaction chamber; 30-Cover; 31-Body; 311-Inlet; 32-Top cover; 321-Outlet; 33-Inlet pipe; 34-Mounting hole; 40-Swirl vane; 41-Outer ring; 42-Central column; 43-Blade; 50-Adjusting protrusion; 60-Second arc-shaped through hole; 70-Second ball joint structure. Detailed Implementation

[0034] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which constitute a part of the present invention and are used together with the embodiments of the present invention to illustrate the principles of the present invention, but are not intended to limit the scope of the present invention.

[0035] Example 1

[0036] This embodiment provides a high-flow-rate silane solar cell process exhaust gas treatment device. See [link / reference] Figure 5 The system includes an air inlet pipe 33, a heating unit (e.g., a plasma device), and a reaction chamber 20. The exhaust gas of the solar cell process system is directly supplied into the reaction chamber 20 through the air inlet pipe 33. The heating unit is located in the reaction chamber 20 and is used to heat the exhaust gas in the reaction chamber 20. The exhaust gas undergoes efficient oxidation and combustion in the reaction chamber 20.

[0037] Compared with existing technologies, the high-flow-rate silane solar cell process exhaust gas treatment equipment provided in this embodiment eliminates the air inlet chamber between the air inlet pipe 33 and the reaction chamber 20. A heating unit is installed in the reaction chamber 20, allowing the exhaust gas to undergo oxidation and combustion within the reaction chamber 20. On one hand, since the volume of the reaction chamber 20 is much larger than that of the air inlet chamber (3-5L for the air inlet chamber and approximately 32-40L for the reaction chamber 20), eliminating the air inlet chamber eliminates the problem of air inlet chamber blockage. Similarly, the larger volume of the reaction chamber 20 also largely prevents blockage, thereby extending the cleaning and maintenance cycle of the reaction chamber 20, reducing equipment cleaning and maintenance costs, and contributing to improved production efficiency and reduced production costs. On the other hand, compared to passing through the air inlet chamber first and then undergoing oxidation and combustion in the reaction chamber 20, the exhaust gas treatment equipment in this embodiment allows for efficient oxidation and combustion of the exhaust gas within the reaction chamber 20, significantly improving the treatment efficiency of the exhaust gas from the high-flow-rate silane solar cell manufacturing process.

[0038] It should be noted that the exhaust gas generated by high-flow-rate silane solar cell manufacturing processes (e.g., TOPCon process, Tunnel Oxide Passivated Contact Solar Cell) consists of SiH4, PH3, NH3, and N2O. Among them, SiH4 is the main raw material that generates dust. The average flow rate of SiH4 in the exhaust gas entering each high-flow-rate silane solar cell process exhaust gas treatment equipment is 3-6 L / min, and the peak flow rate is 10-20 L / min, which is 1.5-4 times the flow rate of SiH4 in the exhaust gas generated by the PERC process.

[0039] It should also be noted that, in order to wash away the dust particles generated in the reaction chamber, the above-mentioned high-flow-rate silane solar cell process exhaust gas treatment equipment also includes a water washing spray unit. The exhaust port of the reaction chamber 20 is connected to the water washing spray unit. The exhaust gas discharged from the reaction chamber 20 undergoes gas-solid separation through the water washing spray unit to achieve the washing away of dust particles.

[0040] Understandably, in order to connect the inlet pipe 33 to the reaction chamber 20, the aforementioned high-flow-rate silane solar cell process exhaust gas treatment equipment also includes an inlet end cap, see [link to relevant documentation]. Figures 1 to 4 The air inlet cover includes a cover body 30, which is placed over the top opening of the reaction chamber 20. An exhaust gas delivery hole is provided on the cover body 30, and the air inlet pipe 33 is connected to the reaction chamber 20 through the exhaust gas delivery hole. The cover body 30 and the reaction chamber 20 are coaxial.

[0041] In order to minimize the backflow of exhaust gas, the axial direction of the intake pipe 33 and the exhaust gas delivery hole is perpendicular to the surface of the cover 30. That is to say, the exhaust gas is vertically supplied into the reaction chamber 20 from the upper end, so that the backflow of exhaust gas is not easily generated.

[0042] In order to concentrate the heat generated by the heating unit, the heating unit is provided on the lower end face of the cover 30 facing the reaction chamber 20, and the heating unit is located at the center of the lower end face of the cover 30. The heating unit located at the center evenly radiates heat outward. It can be understood that in order to realize the installation of the heating unit, the cover 30 is provided with a mounting hole 34 for installing the heating unit.

[0043] In order to ensure that the exhaust gas enters the reaction chamber 20 evenly and that a certain amount of exhaust gas intake is guaranteed to maintain the reaction efficiency, the cover 30 is circular in shape.

[0044] It should be noted that when the diameter of the intake pipe 33 is large enough, one intake pipe 33 can be used.

[0045] Depending on actual needs, for example, when exhaust gases from different process equipment need to be introduced into the same reaction chamber 20 for treatment, a scheme using multiple air inlet pipes 33 can be adopted. These multiple air inlet pipes 33 are evenly arranged around the central axis of the cover 30 to achieve a more uniform spatial distribution of the exhaust gases entering the reaction chamber 20. For example, the multiple air inlet pipes 33 can be arranged in one, two, or even more loops around the central axis of the cover 30. The even distribution of each air inlet pipe 33 within each loop around the central axis of the cover 30 facilitates the homogenization of the exhaust gases entering the reaction chamber 20, ensuring thorough mixing with the air in the reaction chamber 20 and thus improving reaction efficiency.

[0046] Specifically, the structure of the cover 30 includes a body 31 and a top cover 32 covering the body 31. An air inlet pipe 33 is located on the body 31. One end of the air inlet pipe 33 is connected to the exhaust port of the solar cell process system, and the other end passes through the rear top cover 32 and the body 31 in sequence and is directly connected to the reaction chamber 20.

[0047] Considering that the heating unit is located on the cover 30, in order to properly cool the heating unit and extend its service life, the body 31 and the top cover 32 form a flow channel for the coolant to pass through. Specifically, the body 31 is a cylindrical component with an open top and a stepped surface on its side wall. The top cover 32 is placed on the stepped surface. Since the stepped surface is a certain distance from the bottom of the body 31, a flow channel is formed between the top cover 32 and the body 31, allowing the coolant to flow in the channel to reduce the temperature of the heating unit and extend its service life.

[0048] In order to enable the coolant to flow in the flow channel, the outer circumferential surface of the body 31 has an inlet 311 for the coolant to enter the flow channel, and the top cover 32 has an outlet 321 for the coolant to flow out of the flow channel.

[0049] There are various types of coolant available, and in some embodiments, there is no limitation. For ease of description, this embodiment of the invention will use water as an example of a coolant. For instance, water enters from the inlet 311 on the outer circumferential surface of the body 31, flows through the flow channel, and exits from the outlet 321 on the top cover 32. Since the top cover 32 is at the top when the cover 30 is normally placed, and the outlet 321 is located at the top of the top cover 32, in this embodiment, water enters from a lower position and flows out from a higher position, thereby making full use of the cooling capacity of the water and saving water consumption.

[0050] For example, the inlet 311 is located at a target position on the outer circumferential surface of the body 31, which is the position on the outer circumferential surface furthest from the outlet 321. In order to make full use of the entire flow channel, the distance between the inlet 311 and the outlet 321 is set far, and the flow path of water in the flow channel is the longest, which can ensure that the cooling capacity of the water is fully utilized.

[0051] To supply reaction gas into the reaction chamber 20, the aforementioned high-flow-rate silane solar cell process exhaust gas treatment equipment also includes a DC flange 10 located between the inlet end cap and the reaction chamber 20. The inlet end cap is connected to the reaction chamber 20 via the DC flange. The DC flange 10 has an annular gas storage ring cavity 11, and an inlet hole 12 communicating with the gas storage ring cavity 11 is opened on the outer circumferential surface of the DC flange 10. See [reference needed] Figures 6 to 7 The gas storage ring cavity 11 is connected to the gas supply device through the air inlet 12, which can provide compressed dry air to the DC flange 10. The gas storage ring cavity 11 is connected to the reaction chamber 20 through the air flow ring 13. Along the direction of the exhaust gas flow in the reaction chamber 20, the air flow ring 13 is inclined towards the central axis of the DC flange 10. For example, the direction of the exhaust gas flow in the reaction chamber 20 is vertically downward. The outlet direction of the air inlet 12 is along the radial direction of the DC flange 10, and the projection of the outlet direction of the air flow ring 13 in the radial plane of the DC flange 10 is along the radial direction of the DC flange 10, so that the reaction gas entering the reaction chamber 20 does not swirl.

[0052] When the gas supply equipment provides the reaction gas, the reaction gas first enters the gas storage ring cavity 11 through the air inlet 12. Since the volume of the gas storage ring cavity 11 is much larger than the volume of the air inlet 12, the reaction gas can be dispersed and homogenized in the entire circumference of the gas storage ring cavity 11. Then, it enters the reaction chamber 20 evenly through the air flow ring 13. Most of the reaction gas reacts with the main air flow of the tail gas in the reaction chamber 20 in the middle area of ​​the reaction chamber 20, thereby achieving the effect of homogenized gas mixing and making the efficiency of harmless tail gas treatment higher.

[0053] With the DC flange having the above-mentioned structure, the projections of the outlet direction of the air inlet 12 and the outlet direction of the airflow ring 13 onto the radial plane of the DC flange 10 are both set along the radial direction of the DC flange 10. This allows the reaction gas to be directly supplied into the middle region of the reaction chamber 20 without generating swirling flow, and to be fully mixed and reacted with the tail gas to be treated in the middle region. This solves the problem that the oxidation reaction between the reaction gas and the tail gas mainly occurs on the inner wall of the reaction chamber, resulting in the accumulation of dust particles on the inner wall of the reaction chamber.

[0054] From the perspective of spatial layout and manufacturability, the DC flange 10, the gas storage ring cavity 11, and the airflow ring channel 13 are arranged coaxially.

[0055] The number of air inlets 12 can be one. When an annular boss 14 is provided in the gas storage ring cavity 11, one air inlet 12 can meet the requirements of air intake uniformity. Exemplarily, the number of air inlets 12 can be multiple, such as 2, 3, 4, 6, etc., depending on actual needs. Exemplarily, when the number of air inlets 12 is multiple, in order to further improve the air intake volume entering the second cavity section 11c and the uniformity of the reaction gas entering the reaction chamber 20 through the DC flange 10, each air inlet 12 is evenly distributed along the outer circumference of the DC flange 10.

[0056] In order to avoid dust accumulation on components above the reaction chamber 20 (e.g., the air inlet chamber) or at the air inlet end of the reaction chamber 20, the aforementioned airflow annular channel 13 is inclined downward along the direction of the reaction gas flow. Correspondingly, the flow direction of the reaction gas is also inclined downward, which is in synergy with the direction of the main airflow of the exhaust gas of the reaction chamber 20. The reaction gas is less likely to flow back to the top of the reaction chamber 20, thereby minimizing the accumulation of dust on components above the reaction chamber 20 (e.g., the air inlet chamber) or at the air inlet end of the reaction chamber 20, thus preventing blockage of the corresponding parts.

[0057] In practical applications, the gas storage ring cavity 11 is formed by four walls, which include, in sequence, the wall where the air inlet 12 is located, the second wall, the first wall, and the third wall. See [reference needed]. Figure 7 The second wall surface is opposite to the third wall surface; the first wall surface is opposite to the wall surface where the air inlet 12 is located. An annular boss 14 is provided on the second wall surface, and along the direction from the air inlet 12 to the first wall surface, the boss 14 is approximately located in the middle of the air storage annular cavity 11. A slit 11b is formed between the boss 14 and the third wall surface. The presence of the boss 14 in the air storage annular cavity 11 essentially divides the air storage annular cavity 11 into three parts, sequentially including a first cavity section 11a, a slit 11b, and a second cavity section 11c along the direction from the first wall surface to the air inlet 12. (See [reference]). Figure 7 The reaction gas enters the second section 11c of the gas storage ring cavity 11 through the air inlet 12, then enters the first section 11a through the slit 11b, and then flows out from the gas flow ring 13 to the middle region of the reaction chamber 20.

[0058] In practical applications, the reactant gas enters the second chamber 11c through the inlet 12. Since the protrusion 14 blocks the reactant gas, it can change the direction of the airflow, so the reactant gas undergoes pre-diffusion in the annular second chamber 11c. After buffering, the gas becomes more uniform, allowing it to diffuse throughout the entire annular second chamber 11c. Then, the reactant gas enters the first chamber 11a through the slit 11b. Since the height H1 of the slit 11b is small, it creates an acceleration effect. When the reactant gas enters the first chamber 11a, due to the increased volume, the reactant gas diffuses again in the first chamber 11a, making the reactant gas flowing out of the annular airflow channel 13 more uniform, which facilitates thorough mixing with the tail gas in the reaction chamber 20 to undergo an oxidation reaction.

[0059] For example, the height H1 of the slit 11b is less than half the height H2 of the gas storage ring cavity 11, and the ratio of the height H1 of the slit 11b to the height H2 of the gas storage ring cavity 11 is (1~2):5, optionally H1:H2 = 1:5. Specifically, H2 is 5mm~20mm, and H1 is 1mm~5mm. It should be noted that the height direction of the slit 11b and the height direction of the gas storage ring cavity 11 are both the axial direction of the DC flange 10.

[0060] To minimize disturbance when the reactant gas enters the airflow annular channel 13, the reactant gas flows out of the airflow annular channel 13 at a preset tilt angle, thereby fully mixing with the exhaust gas in the reaction chamber 20. Along the direction of the exhaust gas flow in the reaction chamber 20, the first wall surface is inclined towards the central axis of the DC flange 10. The sidewall of the airflow annular channel 13 is connected to the first wall surface, and the tilt angle of the airflow annular channel 13 is the same as the tilt angle of the first wall surface. When the reactant gas in the gas storage annular cavity 11 enters the gas storage annular cavity 11 through the inlet 12 and encounters the first wall surface, the tilted surface of the first wall surface guides the reactant gas to the airflow annular channel 13. This reduces disturbance as the gas enters the reaction chamber 20 from the airflow annular channel 13, allowing for thorough mixing of the reactant gas and the exhaust gas in the reaction chamber 20, which is beneficial for a uniform reaction.

[0061] To facilitate the formation of the airflow annular channel 13, the lower end of the aforementioned DC flange 10, near its inner circumferential surface, has a first flange 15. The inner circumferential surface of the first flange 15 is coplanar with the inner circumferential surface of the DC flange 10. In other words, the first flange 15 is located within the reaction chamber 20, and the airflow annular channel 13 is formed within the first flange 15. Thus, compared to a DC flange 10 without a flange, the first flange 15 increases the axial length of the airflow annular channel 13, making the directionality of the reactant gas stronger. This allows the reactant gas to be guided as far as possible to the central region of the reaction chamber 20, resulting in a more uniform distribution of the reactant gas for more thorough reaction with the exhaust gas.

[0062] For example, the angle α between the outlet direction of the airflow ring 13 and the central axis of the DC flange 10 is 10° to 60°. When α is in the range of 10° to 60°, the reactant gas can be guided to the middle region of the reaction chamber 20. When α is less than 10°, the reactant gas flowing out of the airflow ring 13 tends to flow to the bottom of the reaction chamber 20 rather than the middle region of the reaction chamber 20, which will cause uneven mixing of the reactant gas and the tail gas, resulting in incomplete reaction. When α is greater than 60°, the reactant gas flowing out of the airflow ring 13 tends to flow back to the cavity above the reaction chamber 20 or the inlet end of the reaction chamber 20.

[0063] Accordingly, the width W1 of the airflow annular channel 13 is 3mm to 10mm, and the width of the airflow annular channel 13 refers to the distance between the two opposing inner walls forming the annular airflow annular channel 13. When W1 is 3mm to 10mm, on the one hand, the width of the airflow annular channel 13 is less than the height of the gas storage annular cavity 11. For example, the height H2 of the gas storage annular cavity 11 is 5mm to 50mm. That is to say, when the reaction gas flows from the gas storage annular cavity 11 into the reaction chamber 20 through the airflow annular channel 13, it will be accelerated, making it less likely for the reaction gas to flow back upward to the inlet end of the reaction chamber 20 or the air intake chamber above the reaction chamber 20, thereby preventing dust blockage at the air intake or the upper end of the reaction chamber 20.

[0064] Considering the ease of connection between the gas supply equipment and the DC flange 10, each air inlet 12 is provided with a countersunk hole 121 at the air inlet end, and the gas supply equipment pipeline is connected to the countersunk hole 121.

[0065] For example, the air inlet 12 of the DC flange 10 forms a detachable connection with the pipeline of the air supply equipment. Specifically, the connection between the countersunk hole 121 and the pipeline of the air supply equipment can be made in the following ways: the countersunk hole 121 has an internal thread, the pipeline of the air supply equipment is threaded to the countersunk hole 121, and the inner diameter of the pipeline of the air supply equipment is equal to or slightly larger than the inner diameter of the air inlet 12; or, the countersunk hole 121 and the pipeline of the air supply equipment are connected by a snap-fit.

[0066] Considering that the exhaust gas treated in the reaction chamber 20 contains dust particles and water vapor, these particles will mix and form slurry when passing through the exhaust pipe of the high-flow-rate silane solar cell process exhaust gas treatment equipment. This can easily cause blockages in the exhaust pipe, requiring frequent shutdowns for maintenance and affecting production efficiency. Therefore, the aforementioned high-flow-rate silane solar cell process exhaust gas treatment equipment also includes a cyclone dehumidifier. See [link to relevant documentation]. Figure 8The device includes a swirl vane 40, which is located at the air inlet of the exhaust pipe of the high-flow silane solar cell process tail gas treatment equipment. The swirl vane 40 includes an outer ring 41, a central column 42 located in the inner region of the outer ring 41, and a plurality of blades 43 located between the outer ring 41 and the central column 42. The first end of the blades 43 is connected to the outer ring 41, the second end of the blades 43 is connected to the central column 42, and the outer ring 41 is connected to the inner wall of the exhaust pipe. Because the cyclone dehumidifier is equipped with cyclone vanes 40, when the treated exhaust gas containing dust and droplets passes through the cyclone vanes 40, the movement direction of the droplets and dust particles will change, causing them to move in a spiral upward form. Under the action of centrifugal force, the droplets and dust particles, especially the larger droplets and dust particles, will gradually concentrate in the inner wall area of ​​the exhaust pipe. The concentrated droplets and dust gradually merge into larger droplets and dust particles, thereby achieving gas-liquid separation. This can reduce the dust and water vapor content in the exhaust gas, and reduce the occurrence of dust particles mixing with water vapor to form mud, which can easily clog the exhaust pipe.

[0067] To ensure the dehumidification swirl effect, the size of the swirl vane 40, the number and tilt angle of the blades 43, and the gas flow rate need to be comprehensively considered. For example, the outer diameter of the swirl vane 40 is 100-300 mm, the height of the swirl vane 40 is 30-100 mm, the number of blades 43 is 8-20, the tilt angle of the blades 43 relative to the radial plane is 45-75°, and the gas flow rate is 2-8 m / s.

[0068] Considering that the tilt angle of blade 43 relative to the radial plane affects the degree of swirl, in order to adjust the degree of swirl according to the actual exhaust gas conditions, the aforementioned swirl dehumidifier also includes an adjusting ring (not shown in the figure) and a cylindrical adjusting protrusion 50, see [reference]. Figures 9 to 10An adjusting ring is rotatably fitted onto the outer wall of the exhaust pipe. A first arc-shaped through hole (not shown in the figure) with the ball joint structure at the second end as the center is opened on the outer ring 41. A second arc-shaped through hole 60 with the ball joint structure at the second end as the center is opened on the side wall of the exhaust pipe or the side wall of the device connected to the exhaust pipe inlet. Both the first arc-shaped through hole and the second arc-shaped through hole 60 are arranged along the axial direction of the outer ring 41, and the first arc-shaped through hole and the second arc-shaped through hole coincide. The first end of the blade 43 is rotatably and fixedly connected to the outer ring 41 through the first ball joint structure. The second end of the blade 43 is rotatably and fixedly connected to the central column 42 through the second ball joint structure 70. One end of the adjusting protrusion 50 is fixedly connected to the second end of the blade 43. The other end of the adjusting protrusion 50 passes through the first arc-shaped through hole and the second arc-shaped through hole in sequence and is fixedly connected to the adjusting ring. This is because the swirl vane 40 is located on the inner wall of the exhaust pipe, making it impossible to directly adjust the angle of the blade 43. By using the adjustment ring, the adjustment protrusion 50, and the arc-shaped through hole, rotating the adjustment ring causes the adjustment protrusion 50 to move upward or downward along the first and second arc-shaped through holes. This changes the distance between the projection of the adjustment protrusion 50 and the ball joint structure at the second end in the radial plane, causing the blade 43 to rotate at a certain angle. Thus, the tilt angle of the blade 43 can be adjusted according to the actual exhaust gas conditions.

[0069] It should be noted that, due to the design of the adjustment ring, it can cover the second arc-shaped through hole 60, so there will basically be no exhaust gas leakage.

[0070] Example 2

[0071] This embodiment provides a high-flow-rate silane solar cell process system, including the high-flow-rate silane solar cell process exhaust gas treatment equipment provided in Embodiment 1.

[0072] Compared with the prior art, the beneficial effects of the high-flow-rate silane solar cell process system provided in this embodiment are basically the same as those of the high-flow-rate silane solar cell process tail gas treatment equipment provided in Embodiment 1, and will not be described in detail here.

[0073] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A high-flow-rate silane solar cell process tail gas treatment device, characterized in that, It includes an air inlet pipe, a heating unit, and a reaction chamber; the exhaust gas of the solar cell process system is directly supplied into the reaction chamber through the air inlet pipe; the heating unit is located in the reaction chamber and is used to heat the exhaust gas in the reaction chamber; the exhaust gas undergoes oxidation and combustion in the reaction chamber. The exhaust gas treatment equipment also includes an inlet end cover, which includes a cover body and is disposed at the top opening of the reaction chamber; the exhaust gas treatment equipment also includes a DC flange disposed between the inlet end cover and the reaction chamber, the inlet end cover being connected to the reaction chamber via the DC flange, and the DC flange being used to supply reaction gas into the reaction chamber. The DC flange has an annular gas storage ring cavity; the gas storage ring cavity is connected to the reaction chamber through an airflow ring channel, and the airflow ring channel is inclined towards the central axis of the DC flange along the direction of the tail gas flow in the reaction chamber; the projection of the outlet direction of the airflow ring channel in the radial plane of the DC flange is along the radial direction of the DC flange, so that the reaction gas entering the reaction chamber does not swirl. The exhaust gas treatment equipment also includes a cyclone dehumidifier, which includes a cyclone vane. The cyclone vane is located at the exhaust pipe inlet of the high-flow silane solar cell process exhaust gas treatment equipment. The cyclone vane includes an outer ring, a central column located in the inner region of the outer ring, and multiple blades located between the outer ring and the central column. The first end of the blade is connected to the outer ring, the second end of the blade is connected to the central column, and the outer ring is connected to the inner wall of the exhaust pipe. The cyclone dehumidifier also includes an adjusting ring and a cylindrical adjusting protrusion. The adjusting ring is rotatably fitted onto the outer wall of the exhaust pipe. A first arc-shaped through hole with the ball joint structure at the second end as the center is opened on the outer ring. A second arc-shaped through hole with the ball joint structure at the second end as the center is opened on the side wall of the exhaust pipe or the side wall of the device connected to the exhaust pipe inlet. The first and second arc-shaped through holes are both arranged along the axial direction of the outer ring, and the first and second arc-shaped through holes coincide. The first end of the blade is rotatably and fixedly connected to the outer ring through the first ball joint structure. The second end of the blade is rotatably and fixedly connected to the central column through the second ball joint structure. One end of the adjusting protrusion is fixedly connected to the second end of the blade. The other end of the adjusting protrusion passes through the first and second arc-shaped through holes in sequence and is fixedly connected to the adjusting ring. The cover has an exhaust gas delivery hole, and the air inlet pipe is connected to the reaction chamber through the exhaust gas delivery hole.

2. The high-flow-rate silane solar cell process tail gas treatment equipment according to claim 1, characterized in that, The heating unit is a plasma flame generator; And / or, the high-flow-rate silane solar cell process exhaust gas treatment equipment further includes a water washing spray unit, and the gas outlet of the reaction chamber is connected to the water washing spray unit.

3. The high-flow-rate silane solar cell process tail gas treatment equipment according to claim 1, characterized in that, The air intake pipe and exhaust gas delivery hole are perpendicular to the surface of the cover.

4. The high-flow-rate silane solar cell process tail gas treatment equipment according to claim 1, characterized in that, The heating unit is located on the lower end face of the cover facing the reaction chamber.

5. The high-flow-rate silane solar cell process tail gas treatment equipment according to claim 4, characterized in that, The heating unit is located at the center of the lower end face of the cover.

6. A high-flow-rate silane solar cell process system, characterized in that, Includes the high-flow-rate silane solar cell process exhaust gas treatment equipment as described in any one of claims 1 to 5.

7. The high-flow-rate silane solar cell process system according to claim 6, characterized in that, The average flow rate of SiH4 in the exhaust gas entering each high-flow-rate silane solar cell process exhaust gas treatment equipment is 3~6L / min, and the peak flow rate is 10~20L / min.

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