Sensor, anti-icing and de-icing coating and method for producing the same

Abstract

This invention discloses a sensor, an anti-icing and de-icing coating, and a method for preparing the anti-icing and de-icing coating. The method for preparing the anti-icing and de-icing coating includes the following steps: S100, using ion implantation technology, metal ions are implanted onto the surface of the component to form a first ion implantation layer; S200, using magnetically filtered cathode vacuum arc discharge technology, an oxide ceramic insulating layer is deposited on the surface of the first ion implantation layer; S300, using ion implantation technology, metal ions are implanted onto the surface of the oxide ceramic insulating layer to form a second ion implantation layer; S400, using magnetically filtered cathode vacuum arc discharge technology, a metal conductive heating layer is deposited on the second ion implantation layer; S500, using magnetically filtered cathode vacuum arc discharge technology, metal layers and metal nitride layers are alternately deposited multiple times on the surface of the metal conductive heating layer to form a functional protective layer. The coating of this invention has strong adhesion to the component and excellent anti-icing and de-icing performance.

Description

Technical Field

[0001] This invention relates to the technical field of surface treatment using physical vapor deposition, specifically to an anti-icing and de-icing coating, a method for preparing the anti-icing and de-icing coating, and a sensor having the anti-icing and de-icing coating. Background Technology

[0002] For example, many sensor components need to operate in extremely cold and high-humidity environments. In such conditions, ice can form on the surface of these components, causing them to malfunction and preventing the acquisition of valid test data. To address this problem, the traditional solution is to attach heating wires to the sensors and other components for de-icing. Simultaneously, to save energy, a self-cleaning coating is deposited on the surface of these components to actively prevent icing. However, traditional heating and de-icing methods require attaching heating wires to the sensors and other components, which is a complex process with low yield. Furthermore, the process of attaching heating wires to the surface of the sensors and other components negatively impacts the adhesion of the self-cleaning coating. Summary of the Invention

[0003] The purpose of this invention is to provide an anti-icing and de-icing coating and a method for preparing the anti-icing and de-icing coating. The coating includes a first ion implantation layer, an oxide ceramic insulating layer, a second ion implantation layer, a metal conductive heating layer, and a functional protective layer arranged sequentially. The coating has a strong adhesion to the components and has excellent anti-icing and de-icing performance, ensuring that the components work normally in ultra-cold and high-humidity environments.

[0004] Another object of the present invention is to provide a sensor having the anti-icing and de-icing coating.

[0005] To achieve the above objectives, the anti-icing and de-icing coating of the present invention comprises:

[0006] The first ion implantation layer is disposed on the surface of the component;

[0007] An oxide ceramic insulating layer is disposed on the first ion implantation layer;

[0008] A second ion implantation layer is disposed on the oxide ceramic insulating layer;

[0009] A metal conductive heating layer is disposed on the second ion implantation layer; and

[0010] A functional protective layer is disposed on the metal conductive heating layer, comprising multiple overlapping metal layers and metal nitride layers.

[0011] In one embodiment of the above-described anti-icing and de-icing coating, the thickness of the first ion implantation layer is less than 100 nm; the thickness of the oxide ceramic insulating layer is 5–20 μm; the thickness of the second ion implantation layer is less than 100 nm; and the thickness of the metal conductive heating layer is 2–5 μm.

[0012] In one embodiment of the above-described anti-icing and de-icing coating, the thickness of the functional protective layer is 5–10 μm, the thickness of the single metal layer is 100–300 nm, and the thickness of the single metal nitride layer is 500–1000 nm.

[0013] In one embodiment of the above-described anti-icing and de-icing coating, the metal layer and the metal nitride layer are overlapped 5 to 10 times.

[0014] The method for preparing the anti-icing and de-icing coating of the present invention includes the following steps:

[0015] S100 employs ion implantation technology to implant metal ions onto the surface of the component to form a first ion implantation layer;

[0016] S200 employs magnetically filtered cathode vacuum arc discharge technology to deposit an oxide ceramic insulating layer on the surface of the first ion implantation layer.

[0017] S300 employs ion implantation technology to implant metal ions onto the surface of an oxide ceramic insulating layer to form a second ion implantation layer;

[0018] S400 employs magnetically filtered cathode vacuum arc discharge technology to deposit a metal conductive heating layer on the second ion implantation layer.

[0019] The S500 employs magnetically filtered cathode vacuum arc discharge technology, which involves alternating deposition of metal layers and metal nitride layers on the surface of a metal conductive heating layer multiple times to form a functional protective layer.

[0020] In one embodiment of the above-described method for preparing the anti-icing and de-icing coating, in steps S100 and S300, the vacuum degree reaches 1.0 × 10⁻⁶. -3 Pa, with the component facing the metal ion source, the ion source voltage is 8–12 kV, and the extracted beam current is 3–8 mA, to perform high-energy metal ion implantation on the surface of the component, with an implantation dose of 0.5 × 10⁻⁶. 16 ions / cm 2 ~2×10 16 ions / cm 2 Then, turn off the ion source.

[0021] In one embodiment of the above-described method for preparing the anti-icing and de-icing coating, in step S200, the surface of the component is positioned directly opposite the arc source, oxygen is introduced, the oxygen flow rate is controlled at 50–90 sccm, the arc current is 60–70 A, and the vacuum level of the vacuum chamber is maintained at 1.0 × 10⁻⁶. -2 ~2.0×10 -2 Pa, the deposition negative bias voltage is controlled at 100-500V, the duty cycle is maintained at 50-90%, the ion source voltage is 10kV, the extracted beam current is 5mA, and after the deposition time is 3-5 hours, the arc source is turned off and the oxygen supply is stopped.

[0022] In one embodiment of the above-mentioned method for preparing anti-icing and de-icing coatings, in step S400, the components are positioned facing the arc source, the arc current is 40-50A, the deposition negative bias voltage is controlled at 100-300V, the duty cycle is maintained at 70-90%, the deposition time is 1-3 hours, and then the arc source is turned off.

[0023] In one embodiment of the above-described method for preparing anti-icing and de-icing coatings, in step S500, the component is positioned directly facing the arc source, the arc current is 60–80 A, the deposition negative bias voltage is controlled at 100–300 V, the duty cycle is maintained at 70–90%, and the deposition time is 5–10 minutes; the nitrogen flow rate is controlled at 50–90 sccm, the arc current is 60–80 A, and the vacuum level of the vacuum chamber is maintained at 1.0 × 10⁻⁶. -2 ~2.5×10 -2 Pa, the negative bias voltage for deposition is controlled at 100-300V, the duty cycle is maintained at 70-90%, the deposition time is 10-20 minutes, and this step is repeated 5-10 times before the arc source is turned off.

[0024] The surface of the sensor of the present invention has the above-mentioned anti-icing and de-icing coating.

[0025] The technical advantage of this invention is that it prepares an integrated anti-icing and de-icing coating on the surface of components without changing the surface precision of the components, replacing the process of placing heating wires on the surface of components. By combining active anti-icing coating and passive de-icing coating technologies, it greatly improves the production efficiency and yield of products.

[0026] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments, but this is not intended to limit the present invention. Attached Figure Description

[0027] Figure 1 This is a simplified structural diagram of the anti-icing and de-icing coating of the present invention;

[0028] Figure 2 This is a step diagram illustrating the preparation method of the anti-icing and de-icing coating of the invention. Detailed Implementation

[0029] The technical solution of the present invention will now be described in detail with reference to the accompanying drawings and specific embodiments to further understand the purpose, solution, and effects of the present invention, but this is not intended to limit the scope of protection of the appended claims. Furthermore, in the accompanying drawings, the thickness of layers, films, etc., has been enlarged for clarity.

[0030] This invention provides an integrated anti-icing and de-icing coating for the surface of components such as sensors using magnetically filtered cathode vacuum arc discharge technology, and its preparation method. The modified layer is uniform and has excellent anti-icing and de-icing performance, ensuring that the components can work normally in supercooled and high-humidity environments.

[0031] The anti-icing and de-icing coating of this invention combines ion implantation technology with magnetic filtering cathode vacuum arc discharge technology to prepare an ion implantation layer, a deposited ceramic insulating layer, an ion implantation layer, a metal conductive heating layer, and a metal / metal nitride functional protective layer on the surface of the component. More specifically, as... Figure 1 As shown, the anti-icing and de-icing coating 100 of the present invention includes a first ion implantation layer 110, an oxide ceramic insulating layer 120, a second ion implantation layer 130, a metal conductive heating layer 140, and a functional protective layer 150. The first ion implantation layer 100 is disposed on the surface of the component, for example, the first ion implantation layer 100 is formed on the surface of a sensor. The oxide ceramic insulating layer 120 is disposed on the first ion implantation layer 110, the second ion implantation layer 130 is disposed on the oxide ceramic insulating layer 120, the metal conductive heating layer 140 is disposed on the second ion implantation layer 130, and the functional protective layer 150 is disposed on the metal conductive heating layer 140. That is, the first ion implantation layer 110 is formed on the surface of the component, and then the oxide ceramic insulating layer 120, the second ion implantation layer 130, the metal conductive heating layer 140, and the functional protective layer 150 are sequentially stacked. The functional protective layer 150 includes an overlapping metal layer 151 and a metal nitride layer 152.

[0032] The thickness of the first ion implantation layer 110 is less than 100 nm. The thickness of the oxide ceramic insulating layer 120 is 5–20 μm. The thickness of the second ion implantation layer 130 is less than 100 nm. The thickness of the metal conductive heating layer 140 is 2–5 μm. The functional protective layer 150 is formed by overlapping metal layers 151 and metal nitride layers 152 5 to 10 times, with the thickness of a single metal layer 151 being 100–300 nm, the thickness of a single metal nitride layer 152 being 500–1000 nm, and the total thickness of the functional protective layer 150 being 5–10 μm.

[0033] The anti-icing and de-icing coating 100 of this invention has an adhesion strength of over 60N and a temperature resistance greater than 500℃. Under the same working conditions, the corrosion resistance of the components after surface treatment is improved by more than 3 times.

[0034] like Figure 2 As shown, the method for preparing the anti-icing and de-icing coating of the present invention includes the following steps:

[0035] S100 employs ion implantation technology to implant metal ions onto the surface of the component to form a first ion implantation layer;

[0036] S200 employs magnetically filtered cathode vacuum arc discharge technology to deposit an oxide ceramic insulating layer on the surface of the first ion implantation layer.

[0037] S300 employs ion implantation technology to implant metal ions onto the surface of an oxide ceramic insulating layer to form a second ion implantation layer;

[0038] S400 employs magnetically filtered cathode vacuum arc discharge technology to deposit a metal conductive heating layer on the second ion implantation layer.

[0039] The S500 employs magnetically filtered cathode vacuum arc discharge technology, which involves alternating deposition of metal layers and metal nitride layers on the surface of a metal conductive heating layer multiple times to form a functional protective layer.

[0040] The following uses a sensor as an example to further illustrate the preparation process of the anti-icing and de-icing coating of the present invention through specific embodiments:

[0041] Example 1

[0042] S100 employs ion implantation technology to implant zirconium ions onto the sensor surface to obtain a zirconium ion implantation layer;

[0043] S200 uses magnetically filtered cathode vacuum arc discharge technology to deposit a zirconium oxide ceramic insulating layer on the sensor surface;

[0044] The S300 uses ion implantation technology to implant chromium ions onto the sensor surface to obtain a chromium ion implantation layer;

[0045] The S400 uses magnetically filtered cathode vacuum arc discharge technology to deposit an iron-chromium-aluminum conductive heating layer on the sensor surface.

[0046] The S500 uses a magnetically filtered cathode vacuum Cr arc source to deposit a Cr metal layer and a CrAlN metal nitride layer on the sensor surface, and the Cr metal layer and CrAlN metal nitride layer are alternately formed into multiple layers.

[0047] In step S100, the vacuum level reaches 1.0 × 10⁻⁶. -3Pa, so that the sensor is directly facing the ion source on which the zirconium target is mounted, the ion source voltage is 12kV, the extracted beam current is 8mA, and the implanted dose is 1.0×10 16 ions / cm 2 Turn off the ion source.

[0048] In step S200, the fixture is rotated so that the sensor is directly facing the arc source where the zirconium target is mounted. Oxygen is introduced at a flow rate of 60 sccm, the arc current is 70 A, and the vacuum level in the vacuum chamber is maintained at 1.5 × 10⁻⁶. -2 Pa, the negative bias voltage for deposition is controlled at 300V, the duty cycle is maintained at 70%, the deposition time is 5 hours, the arc source is turned off, and the oxygen supply is stopped.

[0049] In step S300, the fixture is rotated so that the sensor is directly facing the ion source on which the chromium target is mounted. The ion source voltage is 10 kV, the extracted beam current is 5 mA, and the implanted dose is 1.5 × 10⁻⁶. 16 ions / cm 2 Turn off the ion source.

[0050] In step S400, the fixture is rotated so that the sensor faces the arc source on which the nickel-chromium alloy is installed. The arc current is 45A, the negative bias voltage for deposition is controlled at 200V, the duty cycle is maintained at 80%, the deposition time is 2 hours, and then the arc source is turned off.

[0051] In step S500, the fixture is rotated so that the sensor is directly facing the arc source on which the titanium-chromium target is mounted. The arc current is 65 A, the deposition negative bias voltage is controlled at 350 V, the duty cycle is maintained at 75%, and the deposition time is 8 minutes. The arc source is then turned off. The fixture is rotated again so that the sensor is directly facing the arc source on which the titanium-chromium target is mounted. The nitrogen flow rate is controlled at 60 sccm, the arc current is 70 A, and the vacuum level in the vacuum chamber is maintained at 1.5 × 10⁻⁶. -2 The deposition negative bias voltage is controlled at 150V, the duty cycle is maintained at 70%, and the deposition time is 20 minutes. Then, the arc source is turned off and the nitrogen supply is stopped. Repeat this step 7 times.

[0052] Example 2

[0053] S100 employs ion implantation technology to implant aluminum ions onto the sensor surface to obtain an aluminum ion implantation layer;

[0054] S200 uses magnetically filtered cathode vacuum arc discharge technology to deposit an alumina ceramic insulating layer on the sensor surface;

[0055] The S300 uses ion implantation technology to implant chromium ions onto the sensor surface to obtain a chromium ion implantation layer;

[0056] The S400 uses magnetically filtered cathode vacuum arc discharge technology to deposit a nickel-chromium metal conductive heating layer on the sensor surface.

[0057] The S500 uses a magnetically filtered cathode vacuum titanium-chromium arc source to deposit a titanium-chromium metal layer and a TiCrN metal nitride layer on the sensor surface, and the titanium-chromium metal layer and TiCrN metal nitride layer are alternately formed into multiple layers.

[0058] In step S100, the vacuum level reaches 1.0 × 10⁻⁶. -3 Pa, so that the sensor is directly facing the ion source on which the aluminum target is mounted, the ion source voltage is 10kV, the extracted beam current is 5mA, and the implanted dose is 1.5×10 16 ions / cm 2 Turn off the ion source.

[0059] In step S200, the fixture is rotated so that the sensor is directly facing the arc source where the aluminum target is mounted. Oxygen is introduced, with the oxygen flow rate controlled at 80 sccm and the arc current at 65 A. The vacuum level of the vacuum chamber is maintained at 2.0 × 10⁻⁶. -2 Pa, the negative bias voltage for deposition is controlled at 200V, the duty cycle is maintained at 60%, the deposition time is 3.5 hours, the arc source is turned off, and the oxygen supply is stopped.

[0060] In step S300, the fixture is rotated so that the sensor is directly facing the ion source on which the chromium target is mounted. The ion source voltage is 10 kV, the extracted beam current is 8 mA, and the implanted dose is 1.5 × 10⁻⁶. 16 ions / cm 2 Turn off the ion source;

[0061] In step S400, the fixture is rotated so that the sensor faces the arc source on which the nickel-chromium alloy is installed. The arc current is 45A, the negative bias voltage for deposition is controlled at 300V, the duty cycle is maintained at 70%, the deposition time is 2.5 hours, and then the arc source is turned off.

[0062] In step S500, the fixture is rotated so that the sensor is directly facing the arc source on which the titanium-chromium target is mounted. The arc current is 65 A, the deposition negative bias voltage is controlled at 350 V, the duty cycle is maintained at 75%, and the deposition time is 6 minutes. The arc source is then turned off. The fixture is rotated again so that the sensor is directly facing the arc source on which the titanium-chromium target is mounted. The nitrogen flow rate is controlled at 60 sccm, the arc current is 70 A, and the vacuum level in the vacuum chamber is maintained at 1.5 × 10⁻⁶. - 2 Pa, the negative bias voltage for deposition is controlled at 150V, the duty cycle is maintained at 70%, the deposition time is 20 minutes, the arc source is turned off, the nitrogen gas supply is stopped, and this step is repeated 9 times.

[0063] Example 3

[0064] S100 employs ion implantation technology to implant chromium ions onto the sensor surface to obtain a chromium ion implantation layer;

[0065] The S200 uses magnetically filtered cathode vacuum arc discharge technology to deposit a chromium oxide ceramic insulating layer on the sensor surface.

[0066] The S300 uses ion implantation technology to implant chromium ions onto the sensor surface to obtain a chromium ion implantation layer;

[0067] The S400 uses magnetically filtered cathode vacuum arc discharge technology to deposit a nickel-chromium metal conductive heating layer on the sensor surface.

[0068] The S500 uses a magnetically filtered cathode vacuum titanium-chromium arc source to deposit a titanium-chromium metal layer and a TiCrN metal nitride layer on the sensor surface, and the titanium-chromium metal layer and TiCrN metal nitride layer are alternately formed into multiple layers.

[0069] In step S100, the vacuum level reaches 1.0 × 10⁻⁶. -3 Pa, so that the sensor is directly facing the ion source on which the chromium target is mounted, the ion source voltage is 12kV, the extracted beam current is 6mA, and the implanted dose is 1.0×10 16 ions / cm 2 Turn off the ion source.

[0070] In step S200, the fixture is rotated so that the sensor is directly facing the arc source where the chromium target is mounted. Oxygen is introduced at a flow rate of 70 sccm, the arc current is 70 A, and the vacuum level in the vacuum chamber is maintained at 1.5 × 10⁻⁶. -2 Pa, the negative bias voltage for deposition is controlled at 350V, the duty cycle is maintained at 60%, the deposition time is 6 hours, the arc source is turned off, and the oxygen supply is stopped.

[0071] In step S300, the fixture is rotated so that the sensor is directly facing the ion source on which the chromium target is mounted. The ion source voltage is 10 kV, the extracted beam current is 8 mA, and the implanted dose is 1.5 × 10⁻⁶. 16 ions / cm 2 Turn off the ion source.

[0072] In step S400, the fixture is rotated so that the sensor faces the arc source on which the nickel-chromium alloy is installed. The arc current is 45A, the negative bias voltage for deposition is controlled at 200V, the duty cycle is maintained at 80%, the deposition time is 2.5 hours, and then the arc source is turned off.

[0073] In step S500, the fixture is rotated so that the sensor is directly facing the arc source on which the titanium-chromium target is mounted. The arc current is 65 A, the deposition negative bias voltage is controlled at 300 V, the duty cycle is maintained at 70%, and the deposition time is 8 minutes. The arc source is then turned off. The fixture is rotated again so that the sensor is directly facing the arc source on which the titanium-chromium target is mounted. The nitrogen flow rate is controlled at 70 sccm, the arc current is 70 A, and the vacuum level in the vacuum chamber is maintained at 1.7 × 10⁻⁶. - 2Pa, the negative bias voltage for deposition is controlled at 150V, the duty cycle is maintained at 60%, the deposition time is 20 minutes, the arc source is turned off, the nitrogen gas supply is stopped, and this step is repeated 5 times.

[0074] The implantation energy for metal ions was 8 keV to 12 keV, and the total ion implantation dose was 0.5 × 10⁻⁶. 16 ions / cm 2 ~2×10 16 ions / cm 2 The composition of the nickel-chromium target is Cr30Ni70, and the composition of the titanium-chromium target is Ti20Cr80.

[0075] Of course, the present invention may have other various embodiments. Without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and modifications according to the present invention, but these corresponding changes and modifications should all fall within the protection scope of the appended claims.

Claims

1. An anti-icing and de-icing coating, characterized in that, include: A first ion implantation layer is disposed on the surface of the component, wherein the first ion implantation layer is a zirconium ion, aluminum ion, or chromium ion implantation layer. An oxide ceramic insulating layer is disposed on the first ion implantation layer. The material of the oxide ceramic insulating layer corresponds to the ion type of the first ion implantation layer and is zirconium oxide, aluminum oxide, or chromium oxide. A second ion implantation layer is disposed on the oxide ceramic insulating layer, and the second ion implantation layer is a chromium ion implantation layer; A metal conductive heating layer is disposed on the second ion implantation layer, wherein the metal conductive heating layer is an iron-chromium-aluminum alloy or a nickel-chromium alloy; as well as A functional protective layer is disposed on the metal conductive heating layer, comprising multiple overlapping metal layers and metal nitride layers, wherein the metal layers and metal nitride layers are chromium metal layers and chromium aluminum nitride layers, or titanium chromium metal layers and titanium chromium nitride layers.

2. The anti-icing and de-icing coating according to claim 1, characterized in that, The thickness of the first ion implantation layer is less than 100 nm; the thickness of the oxide ceramic insulating layer is 5–20 μm; the thickness of the second ion implantation layer is less than 100 nm; and the thickness of the metal conductive heating layer is 2–5 μm.

3. The anti-icing and de-icing coating according to claim 1 or 2, characterized in that, The thickness of the functional protective layer is 5–10 μm, the thickness of the single metal layer is 100–300 nm, and the thickness of the single metal nitride layer is 500–1000 nm.

4. The anti-icing and de-icing coating according to claim 1, characterized in that, The metal layer and the metal nitride layer are overlapped 5 to 10 times.

5. A method for preparing an anti-icing and de-icing coating as described in any one of claims 1 to 4, characterized in that, Includes the following steps: S100 employs ion implantation technology to implant metal ions onto the surface of a component to form a first ion implantation layer, wherein the first ion implantation layer is a zirconium ion, aluminum ion, or chromium ion implantation layer. S200 employs magnetically filtered cathode vacuum arc discharge technology to deposit an oxide ceramic insulating layer on the surface of the first ion implantation layer. The material of the oxide ceramic insulating layer corresponds to the ion type of the first ion implantation layer and is zirconium oxide, aluminum oxide, or chromium oxide. S300 employs ion implantation technology to implant metal ions onto the surface of an oxide ceramic insulating layer to form a second ion implantation layer, wherein the second ion implantation layer is a chromium ion implantation layer. S400 employs magnetically filtered cathode vacuum arc discharge technology to deposit a metal conductive heating layer on the second ion implantation layer. The metal conductive heating layer is an iron-chromium-aluminum alloy or a nickel-chromium alloy. The S500 employs magnetically filtered cathode vacuum arc discharge technology to alternately deposit metal layers and metal nitride layers multiple times on the surface of a metal conductive heating layer to form a functional protective layer. The metal layers and metal nitride layers are either chromium metal layers and chromium aluminum nitride layers, or titanium chromium metal layers and titanium chromium nitride layers.

6. The method for preparing the anti-icing and de-icing coating according to claim 5, characterized in that, In steps S100 and S300, the vacuum level reaches 1.0 × 10⁻⁶. -3 Pa, with the component facing the metal ion source, the ion source voltage is 8–12 kV, and the extracted beam current is 3–8 mA, to perform high-energy metal ion implantation on the surface of the component, with an implantation dose of 0.5 × 10⁻⁶. 16 ions / cm 2 ~2×10 16 ions / cm 2 Then, turn off the ion source.

7. The method for preparing the anti-icing and de-icing coating according to claim 5, characterized in that, In step S200, the surface of the component is positioned directly opposite the arc source, oxygen is introduced, the oxygen flow rate is controlled at 50–90 sccm, the arc current is 60–70 A, and the vacuum level of the vacuum chamber is maintained at 1.0 × 10⁻⁶. -2 ~2.0×10 -2 Pa, the deposition negative bias voltage is controlled at 100-500V, the duty cycle is maintained at 50-90%, the ion source voltage is 10 kV, the extracted beam current is 5mA, and after the deposition time is 3-5 hours, the arc source is turned off and the oxygen supply is stopped.

8. The method for preparing the anti-icing and de-icing coating according to claim 5, characterized in that, In step S400, the component is positioned facing the arc source, the arc current is 40-50A, the negative bias voltage for deposition is controlled at 100-300V, the duty cycle is maintained at 70-90%, the deposition time is 1-3 hours, and then the arc source is turned off.

9. The method for preparing the anti-icing and de-icing coating according to claim 5, characterized in that, In step S500, the component is positioned directly facing the arc source, the arc current is 60–80 A, the deposition negative bias voltage is controlled at 100–300 V, the duty cycle is maintained at 70–90%, and the deposition time is 5–10 minutes; the nitrogen flow rate is controlled at 50–90 sccm, the arc current is 60–80 A, and the vacuum level of the vacuum chamber is maintained at 1.0 × 10⁻⁶. -2 ~2.5×10 -2 Pa, the negative bias voltage for deposition is controlled at 100-300V, the duty cycle is maintained at 70-90%, the deposition time is 10-20 minutes, and this step is repeated 5-10 times before the arc source is turned off.

10. A sensor, characterized in that, Its surface has an anti-icing and de-icing coating as described in any one of claims 1-4.

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