P-type, n-type semiconductor hybrid array thermoelectric device for improved power and performance

Abstract

The application relates to a P-type and N-type semiconductor hybrid array type thermoelectric device with improved power and performance, which comprises a substrate, a plurality of thermocouples and conductive sheets, each thermocouple comprises i parallel P-type thermoelectric semiconductors and j parallel N-type thermoelectric semiconductors, the P-type thermoelectric semiconductors and the N-type thermoelectric semiconductors of each thermocouple are connected in parallel through the conductive sheets, and the P-type thermoelectric semiconductor groups and the N-type thermoelectric semiconductor groups connected in parallel in the thermocouple are connected in series through the conductive sheets, when the thermoelectric semiconductors of the same thermocouple are located in different rows or different columns, the conductive sheets for parallel or series connection in the thermocouple are L-shaped. The hybrid connection mode that a plurality of P-type thermoelectric semiconductors are connected in parallel and then connected in series with the N-type thermoelectric semiconductors connected in parallel is adopted, the problem that the overall output current is limited due to inconsistent P-type and N-type semiconductor material parameters is solved, and higher output power and performance of the thermoelectric device are realized.

Description

Technical Field

[0001] This invention belongs to the field of thermoelectric conversion and clean energy, specifically relating to a P-type and N-type semiconductor hybrid thermoelectric device and a method for determining its parameters. Background Technology

[0002] Thermoelectric conversion technology, as a clean energy source, can directly convert heat energy into electrical energy without any pollution or noise, making it a promising alternative energy source. Thanks to the development of thermoelectric materials, thermoelectric power generation technology has been applied in numerous fields. For example, in aerospace, thermoelectric devices can convert the heat energy released by the decay of radioactive elements into electrical energy to power spacecraft; in wearable devices, thermoelectric devices can convert human body temperature into electrical energy to enable self-powering of wearable devices; in solar energy utilization, thermoelectric devices can convert solar radiation heat into electrical energy, providing a new approach to solar power generation; and in waste heat recovery, thermoelectric devices can reuse waste heat from automobile engine exhaust, industrial waste heat, and ship exhaust, converting it into electrical energy, improving the energy utilization rate of fossil fuels and saving energy.

[0003] As the core power generation unit of thermoelectric conversion technology, the output performance of thermoelectric devices directly affects the power generation of the system. In traditional thermoelectric devices, all thermoelectric semiconductors are connected in series. However, due to the asymmetry in Seebeck coefficient, resistivity, and thermal conductivity between P-type and N-type thermoelectric materials, the overall output current of the thermoelectric device is equal to the smaller output current of either the P-type or N-type semiconductor, leading to energy loss. To overcome this deficiency, patent CN201910179839.9 proposes an asymmetric PN junction thermocouple structure, which achieves the same current output for both P-type and N-type thermoelectric semiconductors by changing their cross-sectional area. However, the subtle dimensional differences between P-type and N-type thermoelectric semiconductors increase the difficulty of fabrication.

[0004] Therefore, this study achieves the same current output for both P-type and N-type thermoelectric semiconductors by adjusting their series and parallel connections. Furthermore, both P-type and N-type thermoelectric semiconductors use the same size parameters, which effectively reduces the processing difficulty and overcomes the problem of limited output current of thermoelectric devices. Summary of the Invention

[0005] The purpose of this invention is to address the above-mentioned problems by providing a hybrid array thermoelectric device of P-type and N-type semiconductors that improves power and performance. This device overcomes the energy loss problem caused by the asymmetry between P-type and N-type thermoelectric materials and achieves higher output performance of the thermoelectric device through a novel topological connection method between thermoelectric semiconductors.

[0006] The technical solution of this invention is a hybrid array thermoelectric device of P-type and N-type semiconductors to improve power and performance, including a substrate, multiple thermocouples and conductive sheets. Each thermocouple includes i parallel P-type thermoelectric semiconductors and j parallel N-type thermoelectric semiconductors. The P-type and N-type thermoelectric semiconductors of each thermocouple are connected in parallel through conductive sheets, and then the parallel P-type thermoelectric semiconductor group and the parallel N-type thermoelectric semiconductor group in the thermocouple are connected in series through conductive sheets. The height of the P-type thermoelectric semiconductors and the length of the N-type thermoelectric semiconductors are both H, the width of the P-type thermoelectric semiconductors are both L, and the height of the N-type thermoelectric semiconductors is both W.

[0007] The P-type and N-type thermoelectric semiconductors of the thermoelectric device are arranged in an array on the first substrate of the substrate, and the spacing between adjacent thermoelectric semiconductors is D; a second substrate is provided above the array of thermoelectric semiconductors.

[0008] Preferably, the dimensional parameters of the first substrate are the same as those of the second substrate.

[0009] The length of the first substrate is greater than the sum of the lengths and spacings of all thermoelectric semiconductors in each row of the array, and the width of the first substrate is greater than the sum of the widths and spacings of all thermoelectric semiconductors in each column.

[0010] The first substrate and the second substrate are fixedly connected to the conductive sheets at both ends of the thermoelectric semiconductor, and the distance between the conductive sheet of the thermoelectric semiconductor at the edge of the first substrate or the edge of the second substrate and the corresponding substrate edge is not less than D.

[0011] The length L1 of the conductive strip used for parallel or series connection within a thermocouple satisfies the following relationship:

[0012] L1≥(i+j)L+(i+j-1)D

[0013] The width W1 of the conductive sheet satisfies the relationship: W1≥W.

[0014] When the thermoelectric semiconductors of the same thermocouple are located in different rows or columns, the conductive sheet used for parallel or series connection within the thermocouple is L-shaped.

[0015] Both ends of the thermoelectric semiconductor are plated with metal layers. The metal layers at the ends of the thermoelectric semiconductor are welded to the conductive sheets at the ends of the thermoelectric semiconductor, and the melting point of the solder used for welding the conductive sheets is greater than the maximum operating temperature of the thermoelectric semiconductor.

[0016] Preferably, the thickness of the metal layer at the end of the thermoelectric semiconductor is 1-10 μm.

[0017] The method for determining the parameters of the thermoelectric device includes:

[0018] 1) Calculate the equivalent output current I of a single P-type thermoelectric semiconductor and an N-type thermoelectric semiconductor respectively. P IN , compare I P and I N , so as to determine the magnitude relationship between i and j;

[0019] If I P > I N , then i < j; if I P = I N , then i = j; if I P < I N , then i > j;

[0020] 2) Calculate the output currents ∑I P and ∑I N of i P-type thermoelectric semiconductors and j N-type thermoelectric semiconductors in a single thermocouple respectively, and let ∑I P = ∑I N to obtain the quantity ratio Fr of P-type thermoelectric semiconductors and N-type thermoelectric semiconductors;

[0021] 3) Determine the quantity i of P-type thermoelectric semiconductors and the quantity j of N-type thermoelectric semiconductors in a single thermocouple, as well as the quantity k of thermocouples, the quantity of P-type thermoelectric semiconductors and the quantity of N-type thermoelectric semiconductors in the thermoelectric device.

[0022] Furthermore, the calculation formula of the equivalent output current I P of a single P-type thermoelectric semiconductor is as follows:

[0023]

[0024] In the formula represents the Seebeck coefficient of the P-type thermoelectric semiconductor; represents the resistivity of the P-type thermoelectric semiconductor; T h and Tc represent the hot end and cold end temperatures of the thermoelectric device respectively;

[0025] The calculation formula of the equivalent output current I N of a single N-type thermoelectric semiconductor is as follows:

[0026]

[0027] In the formula represents the Seebeck coefficient of the N-type thermoelectric semiconductor;[[ID=​​​​​​​​​​​Output current ∑I of j N-type thermoelectric semiconductors in a single thermocouple N The calculation formula is as follows:

[0031]

[0032] Ratio of the number of P-type thermoelectric semiconductors to the number of N-type thermoelectric semiconductors:

[0033]

[0034] Preferably, in step 3), Fr is expressed as a fractional form, and the Fr fraction is simplified using the greatest common divisor of the numerator and denominator to obtain the simplest fraction where Nu represents the numerator of the simplest fraction of Fr, and De represents the denominator of the simplest fraction of Fr.

[0035] If Nu < 10 and De < 10, then let i = Nu and j = De;

[0036] If Nu ≥ 10 or De ≥ 10, express the result of Fr as a decimal form and take the approximation. The approximation of Fr is the result of truncating the x digits after the decimal point of the value of Fr, where x represents the number of decimal places, 1 ≤ x ≤ 3; let Nu takes the value of the numerator of the simplest fraction of the denominator of the simplest fraction of, and then let i = Nu and j = De.

[0037] Preferably, the value of the number of decimal places x is determined according to the quantity scale of the thermoelectric semiconductors in the thermoelectric device. Let M be the total number of P-type thermoelectric semiconductors and N-type thermoelectric semiconductors in the thermoelectric device.

[0038] If the quantity scale of the thermoelectric semiconductors is small, that is, 1 ≤ M ≤ 500, then let x = 1;

[0039] If the quantity scale of the thermoelectric semiconductors is medium, that is, 500 < M ≤ 1000, then let x = 2;

[0040] [[ID=forty-two]]If the quantity scale of the thermoelectric semiconductors is large, that is, M > 1000, then let x = 3.

[0041] Furthermore, the number of thermocouples in the thermoelectric device

[0042]

[0043] where [] represents rounding down; y is the remainder of M / (i + j).

[0044] Determine the magnitude of y. If y = 0 or y < min(i, j), the number of P-type thermoelectric semiconductors in the thermoelectric device is i'k, the number of N-type thermoelectric semiconductors is j'k, and the total number of thermoelectric semiconductors is M = k(i + j);

[0045] If y > max(i, j), when i ≥ j, the number of P-type thermoelectric semiconductors in the thermoelectric device is i'k + i, the number of N-type thermoelectric semiconductors is j'k, and the total number of thermoelectric semiconductors M = k(i + j) + i; when i < j, the number of P-type thermoelectric semiconductors is i'k, the number of N-type thermoelectric semiconductors is j'k + j, and the total number of thermoelectric semiconductors is M = k(i + j) + j;

[0046] If min(i, j) ≤ y ≤ max(i, j), when i ≥ j, the number of P-type thermoelectric semiconductors in the thermoelectric device is i'k, the number of N-type thermoelectric semiconductors is j'k + j, and the total number of thermoelectric semiconductors M = k(i + j) + j; when i < j, the total number of P-type thermoelectric semiconductors is i'k + i, the number of N-type thermoelectric semiconductors is j'k, and the total number of thermoelectric semiconductors M = k(i + j) + i.

[0047] Compared with the prior art, the beneficial effects of the present invention include:

[0048] 1) The hybrid-connected array thermoelectric device of the present invention adopts a hybrid connection method in which multiple P-type thermoelectric semiconductors are connected in parallel internally and then connected in series with the N-type thermoelectric semiconductors connected in parallel internally, solving the problem of limited overall output current caused by inconsistent material parameters of P-type and N-type thermoelectric semiconductors, and achieving higher output power and performance of the thermoelectric device.

[0049] 2) The internal parallel connection and external series connection of the P-type and N-type semiconductors of the present invention are respectively realized through the conductive sheets on the upper and lower sides of the P-type and N-type semiconductors, and the conductive ends on the upper and lower sides of the P-type and N-type semiconductors are welded to the conductive sheets, with high reliability and good durability;

[0050] 3) The present invention can produce thermoelectric products with different powers by different numbers of arrays of P-type and N-type semiconductors, meeting the power requirements of various thermoelectric conversions;

[0051] 4) The parameter determination method of the present invention provides the optimal topological structure parameters of the thermoelectric device, adopts different parameter designs for thermoelectric semiconductor arrays with different numbers, and maximally improves the performance of the thermoelectric device.

[0052] 5) The P-type and N-type thermoelectric semiconductors of the thermoelectric device of the present invention both adopt unified size parameters, effectively reducing the production difficulty and facilitating mass production. Description of the Drawings

[0053] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0054] Figure 1 This is a schematic diagram of the structure of a thermoelectric device according to an embodiment of the present invention.

[0055] Figure 2 This is a flowchart illustrating the parameter determination method for thermoelectric devices according to an embodiment of the present invention.

[0056] Figure 3 This is a schematic diagram of the thermoelectric semiconductor array and the upper and lower hybrid connection of the thermoelectric device according to an embodiment of the present invention.

[0057] Figure 4 This is a schematic diagram of the upper conductive sheet of the thermoelectric semiconductor array of the thermoelectric device according to an embodiment of the present invention.

[0058] Figure 5 This is a schematic diagram of the lower conductive sheet of the thermoelectric semiconductor array of the thermoelectric device according to an embodiment of the present invention.

[0059] Explanation of reference numerals in the attached drawings: thermocouple 1, P-type semiconductor 101, N-type semiconductor 102, substrate 2, first substrate 201, second substrate 202, conductive sheet 3. Detailed Implementation

[0060] like Figure 1 As shown, a hybrid array thermoelectric device of P-type and N-type semiconductors for improved power and performance includes a substrate 2, a conductive sheet 3, and thermocouples 1. The number of thermocouples 1 is k, sandwiched between a first substrate 201 and a second substrate 202. Each thermocouple 1 pair consists of i P-type thermoelectric semiconductors 101, j N-type thermoelectric semiconductors 102, and conductive sheets 3 connecting their upper and lower ends. The i P-type thermoelectric semiconductors 101 and j N-type thermoelectric semiconductors 102 are connected in parallel inside the conductive sheet 3, and then connected in series outside the conductive sheet 3. The height of the P-type thermoelectric semiconductors 101 and the length of the N-type thermoelectric semiconductors 102 are both H, the width of both are L, and the resistivity is ρ. P (T) and ρ N (T) and Seebeck coefficient are respectively S P (T) and S N(T); where the spacing between thermoelectric semiconductors is D, the length L1 of the conductive sheet 3 satisfies the relationship: L1≥(i+j)L+(i+j-1)D, the width W1 of the conductive sheet 3 satisfies the relationship: W1≥W, the dimensional parameters of the first substrate 201 and the second substrate 202 are equal, and the length of the first substrate 201 and the second substrate 202 is greater than the sum of the lengths and spacings of all thermoelectric semiconductors in each row, and the width of the first substrate 201 and the second substrate 202 is greater than the sum of the widths and spacings of all thermoelectric semiconductors in each column; in addition, when the thermoelectric semiconductors of the same thermocouple 1 are located in different rows or different columns, they are used to connect the P-type thermoelectric semiconductor 101 and the N-type thermoelectric semiconductor 101 respectively. The conductive sheets 3 at the upper and lower ends of the thermoelectric semiconductor 102 are L-shaped according to the corresponding series-parallel connection. In addition, the first substrate 201 and the second substrate 202 are closely connected to the conductive sheets 3 at the lower and upper ends of the thermoelectric semiconductor array, respectively. The distance between the conductive sheets 3 located around the perimeter and the edge of the first substrate 201 or the second substrate 202 is greater than or equal to the distance D between the thermoelectric semiconductors. The upper and lower ends of the P-type thermoelectric semiconductor 101 and the N-type thermoelectric semiconductor 102 are plated with metal layers of 1-10μm. The metal layers at the upper and lower ends of the thermoelectric semiconductors are welded together with the conductive sheets 3 at the upper and lower ends of the thermoelectric semiconductors, respectively. The melting point of the solder is greater than the maximum operating temperature of the thermoelectric semiconductor.

[0061] like Figure 2 As shown, the parameter determination method for the above-mentioned hybrid array thermoelectric device includes:

[0062] Step 1: Calculate the equivalent output current I of a single P-type thermoelectric semiconductor and a single N-type thermoelectric semiconductor. P and I N :

[0063] (1) Calculate the equivalent output current I of the P-type thermoelectric semiconductor. P :

[0064]

[0065] In the formula, and T is the integral mean value of the Seebeck coefficient and resistivity of the P-type thermoelectric material, respectively, calculated by formulas (2) and (3). h and T c These are the hot-end temperature and cold-end temperature of the hybrid thermoelectric device, respectively.

[0066]

[0067]

[0068] (2) Calculate the equivalent output current I of the N-type thermoelectric semiconductor. N :

[0069]

[0070] Wherein, and are respectively the integral median values of the Seebeck coefficient and resistivity of the N-type thermoelectric material, and are calculated by formulas (5) and (6).

[0071]

[0072]

[0073] (3) Compare the magnitude relationship between I P and I N to determine the magnitude relationship between i and j. If I P >I N , then i < j; if I P =I N 9]], then i = j; if I P <I N , then i > j.

[0074] Step 2: Calculate the total output currents ∑I P and ∑I N of i P-type thermoelectric semiconductors and j N-type thermoelectric semiconductors in a single thermocouple respectively:

[0075] (1) Calculate the total output current ΣI P of i P-type thermoelectric semiconductors:

[0076]

[0077] (2) Calculate the total output current ∑I N of j N-type thermoelectric semiconductors:

[0078]

[0079] (3) Let ∑I P =∑I N to obtain the ratio of the number of P-type thermoelectric semiconductors to the number of N-type thermoelectric semiconductors That is:

[0080]

[0081] Step 3: Simplify the value of to the simplest fraction. If the number of digits of both the numerator and denominator of the fraction is equal to 1, the obtained value is the corresponding values of i and j; if the number of digits of the numerator or denominator of the fraction is greater than or equal to 2, make or The result is rounded to x decimal places and reduced to the simplest fraction, and the obtained value is the corresponding values of i and j, where 1 ≤ x ≤ 3. The number of decimal places x is related to the sum M of the numbers of all P-type thermoelectric semiconductors and N-type thermoelectric semiconductors in the series-parallel thermoelectric device. If 1 ≤ M ≤ 500, then x = 1; if 500 < M ≤ 1000, then x = 2; if M > 1000, then x = 3.

[0082] Determine the number k of thermocouples and the total number of P-type thermoelectric semiconductors and N-type thermoelectric semiconductors in the series-parallel array thermoelectric device. The number of thermocouples is:

[0083]

[0084] Round the calculation result to an integer and obtain the remainder y. k is equal to the integer part, and then judge the situation of y. If y = 0 or y < min(i, j), then the total number of P-type thermoelectric semiconductors is i'k, and the total number of N-type thermoelectric semiconductors is j'k. The total number of thermoelectric semiconductors is finally determined as M = k(i + j); if y > max(i, j), when i ≥ j, the total number of P-type thermoelectric semiconductors is i'k + i, the total number of N-type thermoelectric semiconductors is j'k, and M = k(i + j) + i. When i < j, the total number of P-type thermoelectric semiconductors is i'k, the total number of N-type thermoelectric semiconductors is j'k + j, and M = k(i + j) + j; if min(i, j) ≤ y ≤ max(i, j), when i ≥ j, the total number of P-type thermoelectric semiconductors is i'k, the total number of N-type thermoelectric semiconductors is j'k + j, and M = k(i + j) + j. When i < j, the total number of P-type thermoelectric semiconductors is i'k + i, the total number of N-type thermoelectric semiconductors is j'k, and M = k(i + j) + i.

[0085] The thermoelectric materials used for P-type thermoelectric semiconductors and N-type thermoelectric semiconductors in this example are Bi2Te3-based materials. The thermoelectric material parameters of P-type and N-type semiconductors are shown in Table 1. It is assumed that the Seebeck coefficient and resistivity of the thermoelectric material are independent of temperature.

[0086] Table 1 Thermoelectric material parameter table of Bi2Te3-based P-type semiconductor and N-type semiconductor

[0087]

[0088] In addition, the relevant dimensional parameters and other parameters of the series-parallel array thermoelectric device are shown in Table 2.

[0089] Table 2 Dimensional parameter and other parameter table of series-parallel array thermoelectric device

[0090]

[0091]

[0092] According to the data in Table 1 and Table 2, the equivalent output current I of a single P-type thermoelectric semiconductor is calculated P is greater than the equivalent output current I of a single N-type thermoelectric semiconductor N , so, i < j; further calculation gives where the number of digits of both the numerator and the denominator is 1. Therefore, the number of P-type thermoelectric semiconductors in a single thermocouple is 1, and the number of N-type thermoelectric semiconductors is 2; further calculation gives that the number k of thermocouples in the series-parallel array type thermoelectric device is 84, and the remainder y = 2 = j. Therefore, the total number of P-type thermoelectric semiconductors is 84, the total number of N-type thermoelectric semiconductors is 170, and the total number M of thermoelectric semiconductors is 254.

[0093] The size parameters of the substrate and the conductive sheet are further determined, as shown in Table 3

[0094] Table 3 Size parameter table of the substrate and the conductive sheet of the series-parallel array type thermoelectric device

[0095]

[0096] Figure 3 and Figure 4 and Figure 5 respectively show the thermoelectric semiconductor array, the upper conductive sheet, and the lower conductive sheet of the series-parallel array type thermoelectric device determined by the calculation. The series-parallel array type thermoelectric device contains a total of 84 thermocouples. Each thermocouple contains 1 P-type thermoelectric semiconductor and 2 N-type thermoelectric semiconductors. The 2 N-type thermoelectric semiconductors are connected in parallel and then connected in series with the P-type thermoelectric semiconductor

[0097] The specific embodiments have been described in detail based on the technical solutions of the present invention. According to the technical solutions of the present invention, without changing the essence of the present invention, those of ordinary skill in the art can propose various structural ways and implementation ways that can be mutually replaced. Therefore, the specific embodiments described above and the drawings are only exemplary illustrations of the technical solutions of the present invention, and should not be regarded as the whole of the present invention or regarded as a limitation or restriction on the technical solutions of the present invention

Claims

1. A hybrid array thermoelectric device of P-type and N-type semiconductors for improved power and performance, characterized in that, The thermocouple includes a substrate, multiple thermocouples, and conductive sheets. Each thermocouple includes i parallel P-type thermoelectric semiconductors and j parallel N-type thermoelectric semiconductors. The P-type and N-type thermoelectric semiconductors of each thermocouple are connected in parallel via conductive sheets. The parallel P-type thermoelectric semiconductor groups and parallel N-type thermoelectric semiconductor groups within the thermocouple are then connected in series via conductive sheets. The height of both the P-type and N-type thermoelectric semiconductors is H, the length is L, and the width is W. The P-type thermoelectric semiconductors and N-type thermoelectric semiconductors of the thermoelectric device are arranged in an array on the first substrate of the substrate, and the spacing between adjacent thermoelectric semiconductors is D; a second substrate is provided on the other side of the thermoelectric semiconductor array, and the P-type thermoelectric semiconductors and N-type thermoelectric semiconductors are located between the first substrate and the second substrate. The length of the first substrate is greater than the sum of the lengths and spacings of all thermoelectric semiconductors in each row of the array, and the width of the first substrate is greater than the sum of the widths and spacings of all thermoelectric semiconductors in each column. The method for determining the parameters of the hybrid array thermoelectric device includes: 1) Calculate the equivalent output current I of a single P-type thermoelectric semiconductor and an N-type thermoelectric semiconductor respectively. P I N Comparison I P and I N This determines the size relationship between i and j; If I P > I N , then i < j; if I P = I N , then i = j; if I P < I N , then i > j; 2) Calculate the output current ∑I of each of the i P-type thermoelectric semiconductors and j N-type thermoelectric semiconductors in a single thermocouple. P ,∑I N Let ∑I P =∑I N The ratio of the number of P-type thermoelectric semiconductors to N-type thermoelectric semiconductors, Fr, was obtained. 3) Determine the number of P-type thermoelectric semiconductors i and N-type thermoelectric semiconductors j in a single thermocouple, as well as the number of thermocouples k, P-type thermoelectric semiconductors and N-type thermoelectric semiconductors in a thermoelectric device.

2. The hybrid array thermoelectric device according to claim 1, characterized in that, When the thermoelectric semiconductors of the same thermocouple are located in different rows or columns, the conductive sheet used for parallel or series connection within the thermocouple is L-shaped.

3. The hybrid array thermoelectric device according to claim 1, characterized in that, The dimensional parameters of the first substrate are the same as those of the second substrate.

4. The hybrid array thermoelectric device according to claim 1, characterized in that, The first substrate and the second substrate are fixedly connected to the conductive sheets at both ends of the thermoelectric semiconductor, and the distance between the conductive sheet of the thermoelectric semiconductor at the edge of the first substrate or the edge of the second substrate and the corresponding substrate edge is not less than D.

5. The hybrid array thermoelectric device according to claim 1, characterized in that, The length L1 of the conductive strip used for parallel or series connection within a thermocouple satisfies the following relationship: L1≥(i+j)L+(i+j-1)D The width W1 of the conductive sheet satisfies the relationship: W1≥W.

6. The hybrid array thermoelectric device according to claim 1, characterized in that, Both ends of the thermoelectric semiconductor are plated with metal layers. The metal layer at the end of the thermoelectric semiconductor is welded to the conductive sheet at the end of the thermoelectric semiconductor. The thickness of the metal layer at the end of the thermoelectric semiconductor is 1-10μm.

7. The hybrid array thermoelectric device according to claim 1, characterized in that, The equivalent output current I of a single P-type thermoelectric semiconductor P The calculation formula is as follows: In the formula This represents the Seebeck coefficient of a P-type thermoelectric semiconductor; T represents the resistivity of a P-type thermoelectric semiconductor; h Tc and Tc represent the hot and cold junction temperatures of the thermoelectric device, respectively.

8. The hybrid array thermoelectric device according to claim 7, characterized in that, The equivalent output current I of a single N-type thermoelectric semiconductor N The calculation formula is as follows: In the formula This represents the Seebeck coefficient of an N-type thermoelectric semiconductor; This represents the resistivity of an N-type thermoelectric semiconductor.

9. The hybrid array thermoelectric device according to claim 8, characterized in that, The output current ∑I of i P-type thermoelectric semiconductors in a single thermocouple P The calculation formula is as follows: The output current ∑I of j N-type thermoelectric semiconductors in a single thermocouple N The calculation formula is as follows:

10. The hybrid array thermoelectric device according to claim 9, characterized in that, The ratio of the number of P-type thermoelectric semiconductors to the number of N-type thermoelectric semiconductors:

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