An optical receiver, transimpedance amplifier and signal processing method

Abstract

The embodiment of the present application provides a kind of optical receiver, transimpedance amplifier and signal processing method.The optical receiver includes transimpedance amplifier and photoelectric detector.Transimpedance amplifier is used to obtain first voltage, first voltage is used to power supply transimpedance amplifier;Second voltage is obtained, and the second voltage is greater than the first voltage;Third voltage is output to the cathode of photoelectric detector, and the third voltage is obtained by voltage stabilizing treatment to the second voltage;Receive electrical signal from the anode of photoelectric detector, and the electrical signal is generated by photoelectric conversion of photoelectric detector to optical signal;The electrical signal is amplified processing.The optical receiver disclosed in the present application improves the reverse bias voltage loaded on the photoelectric detector, ensures that PIN receiver does not affect receiving sensitivity in the case of transimpedance increase, and improves system performance.

Description

Technical Field

[0001] This application relates to the field of optical communication, and more specifically, to an optical receiver, a transimpedance amplifier, and a signal processing method. Background Technology

[0002] With the rapid development of high-speed, high-capacity optical communication technology, passive optical networks (PONs) are widely used in optical access networks due to their characteristics such as saving fiber resources, easy maintenance, and easy expansion.

[0003] The performance of an optical receiver depends primarily on the responsivity of the photodetector, the equivalent input noise of the trans-impedance amplifier (TIA), and the bandwidth of the receiving device (e.g., the receiver optical subassembly (ROSA)) formed by the photodetector and TIA.

[0004] In the 10G PON field, avalanche photodiodes (APDs) are generally used as photodetectors to achieve better performance. However, due to the complexity of APD manufacturing and its high cost, improving the design of optical receiver devices while ensuring the performance of the optical receiver has become a research hotspot in this field. Summary of the Invention

[0005] This application provides an optical receiver, a transimpedance amplifier, and a signal processing method that can ensure signal reception sensitivity under high transimpedance gain, thereby improving system performance.

[0006] In a first aspect, an optical receiver is provided. The receiver includes a transimpedance amplifier and a photodetector. The transimpedance amplifier is used to: acquire a first voltage, which powers the transimpedance amplifier; acquire a second voltage, which is greater than the first voltage; output a third voltage to the cathode of the photodetector, which is obtained by stabilizing the second voltage; receive an electrical signal from the anode of the photodetector, which is generated by the photodetector through photoelectric conversion of an optical signal; amplify the electrical signal; and output the amplified electrical signal.

[0007] The third voltage is used to provide a reverse bias voltage for the photodetector.

[0008] For example, the first voltage can be a low level. For example, 3.3V, or 3.3V±10%, or 3.3V±20%, the specific voltage value depends on the characteristics of the circuit design and the device itself, and this application does not make a specific limitation on it.

[0009] For example, the second voltage can be a high level, such as 5V, or 5V±10%, or 5V±20%. The specific voltage value depends on the circuit design or the characteristics of the device itself, and this application does not impose any specific limitations on it.

[0010] It should be noted that the statement that the high level is greater than the low level in the embodiments of this application is a relative comparison. This application does not impose specific limitations on the values ​​of high and low levels, as long as the circuit can operate normally and the power consumption is kept as low as possible.

[0011] For example, the first voltage used to power the transimpedance amplifier can be: the first voltage used to power the signal path module of the transimpedance amplifier for amplification processing.

[0012] Optionally, the third voltage can be obtained without regulating the second voltage.

[0013] The optical receiver disclosed in this application solves the problem of degraded receiver sensitivity caused by insufficient bandwidth under high transimpedance gain by increasing the reverse bias voltage applied to the photodetector and reducing the junction capacitance, thereby improving system performance. Furthermore, replacing the APD with a PIN reduces design costs and ensures stable operation of the high-gain transimpedance amplifier within the dynamic range required by the application scenario.

[0014] In conjunction with the first aspect, in some implementations of the first aspect, the transimpedance amplifier is further used to perform a first determination, the first determination being used to determine the magnitude relationship between the reference voltage and the preset threshold, the reference voltage corresponding to the first voltage; and, specifically, the transimpedance amplifier is used to acquire a second voltage when the determination result of the first determination is that the reference voltage is greater than or equal to the preset threshold.

[0015] In conjunction with the first aspect, in some implementations of the first aspect, the transimpedance amplifier is further used to perform a second determination, the second determination being used to determine the magnitude relationship between the second bias voltage and a preset threshold, the second bias voltage corresponding to the first voltage; and, specifically, the transimpedance amplifier is used to acquire the second voltage when the determination result of the second determination is that the second bias voltage is greater than or equal to the preset threshold.

[0016] For example, when at least one of the reference voltage and the second bias voltage is greater than or equal to a preset threshold, the transimpedance amplifier acquires the second voltage. The values ​​of the reference voltage and the second bias voltage can depend on the value of the first voltage. For example, when the first voltage is 3.3V, or 3.3V±10%, or 3.3V±20%, the corresponding reference voltage is usually fixed, such as 1.2V, or 1.2V±10%, or 1.2V±20%. The specific reference voltage value depends on the characteristics of the device itself, and this application does not specifically limit it. In addition, the preset threshold is generally 0.7V, which depends on the characteristics of the device itself, and this application does not specifically limit it.

[0017] In conjunction with the first aspect, in some implementations of the first aspect, the transimpedance amplifier includes a low-level power management module, a high-level power management module, and a signal path module. The low-level power management module controls the power supply to the high-level power management module and also supplies power to the signal path module. The high-level power management module receives a second voltage from its first input port, regulates the second voltage to obtain a third voltage, and outputs the third voltage from its first output port.

[0018] In this implementation, the startup of the high-level power management module is controlled by the low-level power management module, ensuring that the low-level power is turned on first and the high-level power is turned on later, effectively protecting the device from damage.

[0019] In conjunction with the first aspect, in some implementations of the first aspect, the low-level power management module includes: a bandgap reference module, a bias current module, and a low-dropout linear regulator. Specifically, the first port of the bandgap reference module is connected to an external low-level power supply to receive a first voltage. The second port of the bandgap reference module is connected to the first port of the bias current module, and the third port of the bandgap reference module is connected to the second input port of the high-level power management module to output a reference voltage. The second port of the bias current module is connected to the third input port of the high-level power management module to output a first bias current. The third port of the bias current module is connected to the first port of the low-dropout linear regulator to output a second bias current. The second port of the low-dropout linear regulator is connected to the fourth input port of the high-level power management module to output a first bias voltage. The third port of the low-dropout linear regulator is connected to the second port of the signal path module to output a second bias voltage.

[0020] In conjunction with the first aspect, in some implementations of the first aspect, the first input port of the high-level power management module is connected to an external high-level power supply to receive a second voltage.

[0021] In conjunction with the first aspect, in some implementations of the first aspect, the transimpedance amplifier further includes a boost circuit module. The first port of the boost circuit module is connected to an external low-level power supply to receive a first voltage. The boost circuit module is used to boost the first voltage to generate a second voltage. The second port of the boost circuit module is connected to the first input port of a high-level power management module to output the second voltage.

[0022] In conjunction with the first aspect, in some implementations of the first aspect, the high-level power management module is also used to monitor the electrical signal generated by the photodetector and output a received signal strength indication (RSSI) of the electrical signal from the second output port of the high-level power management module.

[0023] In conjunction with the first aspect, in some implementations of the first aspect, the photodetector is a photodiode.

[0024] For example, the photodiode can be an avalanche photodiode (APD) or a PIN photodiode.

[0025] In conjunction with the first aspect, in some implementations of the first aspect, the transimpedance amplifier further includes a first field-effect transistor M1, a second field-effect transistor M2, and a third field-effect transistor M3. The sources of M1 and M2 are simultaneously grounded. The gate of M1 is connected to the third port of the bandgap reference module, the drain of M1 is connected to the drain of M3, the drain of M2 is connected to the gate of M3, and the source of M3 is connected to an external high-level power supply. When the reference voltage output from the third port of the bandgap reference module is low, it indicates that the reference voltage is less than the threshold voltage. At this time, both M2 and M3 are turned on, and the external high-level power supply does not output the second voltage. When the reference voltage output from the third port of the bandgap reference module is high, it indicates that the reference voltage is greater than or equal to the threshold voltage. At this time, M1 is turned on, and the external high-level power supply outputs the second voltage.

[0026] Secondly, a transimpedance amplifier is provided, which is used to: acquire a first voltage, which is used to power the transimpedance amplifier; acquire a second voltage, which is greater than the first voltage; output a third voltage to the cathode of a photodetector, which is obtained by stabilizing the second voltage; receive an electrical signal from the anode of the photodetector, which is generated by the photodetector through photoelectric conversion of an optical signal; amplify the electrical signal and output the amplified electrical signal.

[0027] In conjunction with the second aspect, in some implementations of the second aspect, the transimpedance amplifier is also used to perform a first determination, which is used to determine the magnitude relationship between the reference voltage and the preset threshold, wherein the reference voltage corresponds to the first voltage; and the transimpedance amplifier is specifically used to acquire the second voltage when the determination result of the first determination is that the reference voltage is greater than or equal to the preset threshold.

[0028] In conjunction with the second aspect, in some implementations of the second aspect, the transimpedance amplifier is also used to perform a second determination, the second determination being used to determine the magnitude relationship between the second bias voltage and a preset threshold, the second bias voltage corresponding to the first voltage; and, specifically, the transimpedance amplifier is used to acquire the second voltage when the determination result of the second determination is that the second bias voltage is greater than or equal to the preset threshold.

[0029] In conjunction with the second aspect, in some implementations of the second aspect, the transimpedance amplifier further includes: a low-level power management module, a high-level power management module, and a signal path module. The low-level power management module controls the power supply to the high-level power management module and also supplies power to the signal path module. The high-level power management module receives a second voltage from its first input port, boosts the second voltage to obtain a third voltage, and outputs the third voltage from its first output port.

[0030] The transimpedance amplifier disclosed in this application features separate power supplies for the photodiode and signal path module. The high-level power management module is controlled by the low-level power management module, ensuring a power-on sequence where the low-level power supply turns on first, followed by the high-level power supply, effectively protecting the components from damage. By introducing the high-level power management module, the reverse bias voltage applied to the photodetector is increased, thereby ensuring that the signal-to-noise ratio of the optical receiver does not deteriorate under increased transimpedance, and overcoming the impact of inter-symbol interference introduced by reduced receiver bandwidth on receiver sensitivity.

[0031] In conjunction with the second aspect, in some implementations of the second aspect, the low-level power management module includes: a bandgap reference module, a bias current module, and a low-dropout linear regulator. Specifically, the first port of the bandgap reference module is connected to an external low-level power supply to receive a first voltage. The second port of the bandgap reference module is connected to the first port of the bias current module, and the third port of the bandgap reference module is connected to the second input port of the high-level power management module to output a reference voltage. The second port of the bias current module is connected to the third input port of the high-level power management module to output a first bias current. The third port of the bias current module is connected to the first port of the low-dropout linear regulator to output a second bias current. The second port of the low-dropout linear regulator is connected to the fourth input port of the high-level power management module to output a first bias voltage. The third port of the low-dropout linear regulator is connected to the second port of the signal path module to output a second bias voltage.

[0032] In conjunction with the second aspect, in some implementations of the second aspect, the first input port of the high-level power management module is connected to an external high-level power supply to receive the second voltage.

[0033] In conjunction with the second aspect, in some implementations of the second aspect, the transimpedance amplifier further includes a boost circuit module. The first port of the boost circuit module is connected to an external low-level power supply to receive a first voltage. The boost circuit module is used to boost the first voltage to generate a second voltage. The second port of the boost circuit module is connected to the first input port of a high-level power management module to output the second voltage.

[0034] In conjunction with the second aspect, in some implementations of the second aspect, the high-level power management module is also used to monitor the electrical signal generated by the photodetector and output the RSSI of the electrical signal from the second output port of the high-level power management module.

[0035] In conjunction with the second aspect, in some implementations of the second aspect, the photodetector is a photodiode.

[0036] For example, the photodiode can be a photoavalanche diode (APD) or a PIN photodiode.

[0037] In conjunction with the second aspect, in some implementations of the second aspect, the transimpedance amplifier further includes a first field-effect transistor M1, a second field-effect transistor M2, and a third field-effect transistor M3. The sources of M1 and M2 are simultaneously grounded. The gate of M1 is connected to the third port of the bandgap reference module, the drain of M1 is connected to the drain of M3, the drain of M2 is connected to the gate of M3, and the source of M3 is connected to an external high-level power supply. Specifically, when the reference voltage output from the third port of the bandgap reference module is low, it indicates that the reference voltage is less than the threshold voltage. At this time, both M2 and M3 are turned on, and the external high-level power supply does not output the second voltage. When the reference voltage output from the third port of the bandgap reference module is high, it indicates that the reference voltage is greater than or equal to the threshold voltage. At this time, M1 is turned on, and the external high-level power supply outputs the second voltage.

[0038] Thirdly, a signal processing method is provided, comprising: a transimpedance amplifier acquiring a first voltage, the first voltage being used to power the transimpedance amplifier; the transimpedance amplifier acquiring a second voltage, the second voltage being greater than the first voltage; the transimpedance amplifier sending a third voltage to the cathode of a photodetector, the third voltage being obtained by the transimpedance amplifier through voltage regulation of the second voltage; the transimpedance amplifier receiving an electrical signal from the anode of the photodetector, the electrical signal being generated by the photodetector through photoelectric conversion of an optical signal; the transimpedance amplifier amplifying the electrical signal and outputting the amplified electrical signal.

[0039] For example, the first voltage can be a low level. For example, 3.3V, or 3.3V±10%, or 3.3V±20%, the specific voltage value depends on the characteristics of the circuit design and the device itself, and this application does not make a specific limitation on it.

[0040] For example, the second voltage can be a high level, such as 5V, or 5V±10%, or 5V±20%. The specific voltage value depends on the circuit design or the characteristics of the device itself, and this application does not impose any specific limitations on it.

[0041] The method disclosed in this application increases the reverse bias voltage applied to the photodetector by obtaining a second voltage, thereby ensuring that the signal-to-noise ratio of the optical receiver does not deteriorate when the transimpedance increases, and overcoming the impact of inter-symbol interference introduced by the reduction of receiver bandwidth on the receiver sensitivity.

[0042] In conjunction with the third aspect, in some implementations of the third aspect, the transimpedance amplifier performs a first determination, which is used to determine the magnitude relationship between the reference voltage and the preset threshold, the reference voltage corresponding to the first voltage; and the transimpedance amplifier acquires a second voltage, including: when the determination result of the first determination is that the reference voltage is greater than or equal to the preset threshold, the transimpedance amplifier acquires the second voltage.

[0043] In conjunction with the third aspect, in some implementations of the third aspect, the transimpedance amplifier performs a second determination, which is used to determine the magnitude relationship between the second bias voltage and a preset threshold, the second bias voltage corresponding to the first voltage; and the transimpedance amplifier acquires the second voltage, including: when the determination result of the second determination is that the second bias voltage is greater than or equal to the preset threshold, the transimpedance amplifier acquires the second voltage.

[0044] For example, when at least one of the reference voltage and the second bias voltage is greater than or equal to a preset threshold, the transimpedance amplifier acquires the second voltage. The values ​​of the reference voltage and the second bias voltage can depend on the value of the first voltage. For example, when the first voltage is 3.3V, or 3.3V±10%, or 3.3V±20%, the corresponding reference voltage is usually fixed, such as 1.2V, or 1.2V±10%, or 1.2V±20%. The specific reference voltage value depends on the characteristics of the device itself, and this application does not specifically limit it. In addition, the preset threshold is generally 0.7V, which depends on the characteristics of the device itself, and this application does not specifically limit it.

[0045] In this implementation, the high-level power management module is controlled by the low-level power management module, ensuring that the power-on sequence of low-level power is turned on first and high-level power is turned on later, which can effectively protect the device from damage.

[0046] In conjunction with the third aspect, in some implementations of the third aspect, the transimpedance amplifier acquires the first voltage, including: the transimpedance amplifier receives the first voltage from an external low-level power supply VDDL.

[0047] Alternatively, the transimpedance amplifier receives a high level from an external power supply and steps it down through an internal transformer to obtain a first voltage.

[0048] In conjunction with the third aspect, in some implementations of the third aspect, the transimpedance amplifier obtains the second voltage, including: the transimpedance amplifier receives the second voltage from an external high-level power supply VDDH.

[0049] In conjunction with the third aspect, in some implementations of the third aspect, the transimpedance amplifier obtains the second voltage by: boosting the first voltage to generate the second voltage.

[0050] For example, the transimpedance amplifier boosts the first voltage through a boost circuit module or a transformer.

[0051] Fourthly, an optical system device is provided, comprising: an optical receiver as described in the first aspect or any possible implementation of the first aspect, or a transimpedance amplifier as described in the second aspect or any possible implementation of the first aspect.

[0052] For example, the optical system device is an optical network unit (ONU) or an optical line terminal (OLT).

[0053] It should be understood that this system equipment can be applied to optical access networks or metropolitan area networks, and this application does not specifically limit it.

[0054] Fifthly, a chip is provided, comprising: a processor and a communication interface, wherein the processor reads instructions stored in a memory through the communication interface and executes the method in the third aspect or any possible implementation thereof. Attached Figure Description

[0055] Figure 1 This is a schematic diagram of the conventional optical receiver provided in this application.

[0056] Figure 2 This is a schematic diagram of the structure of an optical receiver provided in an embodiment of this application.

[0057] Figure 3 This is a schematic diagram of another optical receiver provided in an embodiment of this application.

[0058] Figure 4 This is a schematic diagram of the transimpedance amplifier provided in the embodiments of this application.

[0059] Figure 5 This is a schematic diagram of another optical receiver provided in the embodiments of this application.

[0060] Figure 6 This is a schematic flowchart of a signal processing method provided in an embodiment of this application. Detailed Implementation

[0061] The technical solutions in the embodiments of this application will now be described with reference to the accompanying drawings.

[0062] Fiber optic access network (PON) refers to an application form in which optical fiber is used as the primary transmission medium to transmit user information within the access network. Alternatively, it can be described as an access method where service nodes and users communicate via optical fiber, or partially via optical fiber. PON consists of an OLT at the central office, ONUs at the user side, and an optical distribution network (ODN).

[0063] With the increasing adoption of 10G PON in the access market and the rise of emerging markets such as passive optical LAN (POL) and fiber-to-the-room (FTTR), 10G optical devices can further reduce costs without compromising performance, leading to their widespread use. Currently, optical chips still account for the majority of the cost in 10G PON optical transceivers. Specifically, for the ONU optical receiver front-end, 10G APDs have significantly higher batch costs compared to PINs due to their manufacturing complexity. If PIN receivers could achieve the same performance as APD receivers, it would greatly reduce the cost of ONU-side optoelectronic receivers.

[0064] It should be understood that the TIA, as the core circuit module of the optical receiver preamplifier, determines key parameters such as the optical receiver's transmission rate and distance. In terms of electrical performance, the TIA has advantages such as high transimpedance gain, wide bandwidth, and low equivalent noise current. The performance of an optical receiver is typically characterized by its receiver sensitivity or signal-to-noise ratio. APD / PIN and TIA are used for burst reception to achieve automatic gain control. Compared to APD, PIN receivers, lacking a multiplication layer, have a photoelectric conversion current that is approximately 8 to 10 times smaller. To achieve the same performance, the TIA in a PIN receiver needs to compensate for approximately 8 to 10 times the gain.

[0065] It should be noted that the embodiments of this application are not only applicable to 10G PON, but also to other types and generations of optical communication systems, and this application does not make specific limitations in this regard.

[0066] It should also be noted that the optical receiver proposed in this application is applicable not only to ONUs, but also to OLTs or other optical communication equipment.

[0067] Figure 1 This is a schematic diagram of the conventional optical receiver provided in this application. For example... Figure 1 As shown, the optical receiver includes a TIA circuit module and a photodiode D0. The TIA circuit module includes an amplifier and an RF resistor. The anode of photodiode D0 is connected to the input terminal PINA of the TIA circuit module, and the cathode of photodiode D0 is connected to the output terminal PINK of the photocurrent, so that photodiode D0 operates under reverse bias. The photocurrent I generated by photodiode D0... PD Input to the TIA circuit module via the PINA terminal.

[0068] In practical applications, the power supply voltage is 3.3V, the voltage difference across the photodiode D0 is required to be 2.5V, the voltage at the input terminal PINA of the TIA circuit module is usually 0.6V, therefore the voltage at node PINK is 3.1V.

[0069] Optionally, the output of the photocurrent monitoring circuit module in the optical receiver is related to the current I of the photodiode D0. PD Monitoring is performed to obtain the Received Signal Strength Indication (RSSI).

[0070] Specifically, the output voltage V of the optical receiver out and input current I in The following conditions must be met:

[0071] (1)

[0072] Among them, I in =P*M*R, where P is the incident light power, M is the multiplication factor of the APD, and R is the responsivity of the APD. A Where C is the amplifier gain, RF is the radio frequency resistance, and C is the gain of the amplifier. D Let M be the capacitance. Where M = 10. Generally, for a PIN receiver, M = 1. That is, the input current I of the PIN receiver. in It is approximately 1 / 10 of that of the APD receiver. If the subsequent receiving line amplifier (LA) meets the same input requirements, the RF of the APD receiver is 10 times that of the PIN receiver.

[0073] At this time, the bandwidth of the optical receiver BW satisfy:

[0074] (2)

[0075] Among them, C T Let A be the junction capacitance of the photodetector, A be the gain of the amplifier, and RF be the RF resistor. When RF increases tenfold, the bandwidth of the optical receiver decreases to 1 / 10 of its original value. Intersymbol interference caused by insufficient bandwidth will limit the receiving sensitivity and fail to meet system requirements.

[0076] It should be understood that the higher the reverse bias voltage of a PIN receiver, the smaller the junction capacitance. Therefore, the bandwidth can be guaranteed to meet system requirements by reducing the junction capacitance of the photodetector. However, due to the limitation of the 3.3V power supply in current PIN receivers, it is difficult to apply a reverse bias voltage of more than 2V to the photodetector.

[0077] In summary, how to solve the problem of insufficient bandwidth in optical receivers under high transimpedance gain, which in turn introduces inter-symbol interference and affects receiver sensitivity, is an urgent technical issue that needs to be addressed.

[0078] In view of this, this application proposes an optical receiver, a transimpedance amplifier, and a signal processing method that can effectively increase the reverse bias voltage applied to a photodetector (e.g., a PIN photodiode or a low-gain avalanche photodiode APD), reduce the junction capacitance, and thus solve the problem of sensitivity degradation caused by insufficient bandwidth of the receiver under high transimpedance gain.

[0079] To facilitate understanding of the embodiments of this application, the following points are made:

[0080] In the various embodiments of this application, unless otherwise specified or in case of logical conflict, the terminology and / or descriptions of different embodiments are consistent and can be referenced by each other. The technical features of different embodiments can be combined to form new embodiments according to their inherent logical relationship.

[0081] In this application, "at least one" means one or more, and "more than one" means two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural. In the textual description of this application, the character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0082] It is understood that the terms "first," "second," and various numerical designations used in the embodiments shown below are merely for descriptive convenience and are not intended to limit the scope of the embodiments of this application. The sequence numbers of the processes below do not imply the order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0083] In the embodiments of this application, descriptions such as "when," "under the circumstances," and "if" all refer to the device making corresponding processing under certain objective circumstances, and are not limited to a specific time. They do not require the device to make a judgment action during implementation, nor do they imply any other limitations.

[0084] The technical solution provided in this application will be described in detail below with reference to the accompanying drawings.

[0085] Figure 2 This is a schematic diagram of the structure of an optical receiver 200 provided in an embodiment of this application. Figure 2 As shown, the optical receiver includes a transimpedance amplifier and a photodetector.

[0086] The transimpedance amplifier is used to: acquire a first voltage, which powers the transimpedance amplifier; acquire a second voltage, which is greater than the first voltage; output a third voltage to the cathode of the photodetector, which is obtained by stabilizing the second voltage; receive an electrical signal from the anode of the photodetector, which is generated by the photodetector through photoelectric conversion of the optical signal; amplify the electrical signal and output the amplified electrical signal.

[0087] The photodetector is a photodiode. For example, a photodiode can be an APD or a PIN diode.

[0088] For example, the first voltage can be a low level. For example, 3.3V, or 3.3V±10%, or 3.3V±20%, the specific voltage value depends on the characteristics of the circuit design and the device itself, and this application does not make a specific limitation on it.

[0089] One possible implementation is that the transimpedance amplifier receives a first voltage from an external low-level power supply VDDL.

[0090] Alternatively, the transimpedance amplifier receives a high level from an external power supply and steps it down through an internal transformer to obtain a first voltage.

[0091] For example, the second voltage can be a high level, such as 5V, or 5V±10%, or 5V±20%. The specific voltage value depends on the circuit design or the characteristics of the device itself, and this application does not impose any specific limitations on it.

[0092] One possible implementation is that the transimpedance amplifier receives a second voltage from an external high-level power supply VDDH.

[0093] Another possible implementation involves the transimpedance amplifier receiving a first voltage from an external low-level power supply and boosting it to generate a second voltage. For example, the transimpedance amplifier could boost the first voltage using a boost circuit module or a transformer.

[0094] For example, the low dropout regulator (LDO) module of the transimpedance amplifier regulates the second voltage (e.g., 4.6V) to obtain the third voltage (e.g., 3.8V).

[0095] It should be noted that the power-on sequence of the low-level power supply in this application embodiment, which turns on first and then the high-level power supply, can effectively protect the device from damage.

[0096] In one possible implementation, the transimpedance amplifier is further used to perform a first determination, which determines the magnitude relationship between a reference voltage and a preset threshold, wherein the reference voltage corresponds to a first voltage; and the transimpedance amplifier is specifically used to acquire a second voltage when the determination result of the first determination is that the reference voltage is greater than or equal to the preset threshold.

[0097] In another possible implementation, the transimpedance amplifier is also used to perform a second determination, which is used to determine the magnitude relationship between the second bias voltage and a preset threshold, the second bias voltage corresponding to the first voltage; and the transimpedance amplifier is specifically used to acquire the second voltage when the determination result of the second determination is that the second bias voltage is greater than or equal to the preset threshold.

[0098] For example, when at least one of the reference voltage and the second bias voltage is greater than or equal to a preset threshold, the transimpedance amplifier acquires the second voltage. The values ​​of the reference voltage and the second bias voltage can depend on the value of the first voltage. For example, when the first voltage is 3.3V, or 3.3V±10%, or 3.3V±20%, the corresponding reference voltage is usually fixed, such as 1.2V, or 1.2V±10%, or 1.2V±20%. The specific reference voltage value depends on the characteristics of the device itself, and this application does not specifically limit it. In addition, the preset threshold is generally 0.7V, which depends on the characteristics of the device itself, and this application does not specifically limit it.

[0099] Specifically, the transimpedance amplifier includes a low-level power management module, a high-level power management module, and a signal path module. The low-level power management module controls the power supply to the high-level power management module and also supplies power to the signal path module. The high-level power management module receives a second voltage from its first input port, boosts the second voltage to generate a third voltage, and outputs the third voltage from its first output port.

[0100] In this implementation, the startup of the high-level power management module is controlled by the low-level power management module, ensuring that the low-level power is turned on first and the high-level power is turned on later, effectively protecting the device from damage.

[0101] Specifically, the transimpedance amplifier also includes a first field-effect transistor M1, a second field-effect transistor M2, and a third field-effect transistor M3. The sources of M1 and M2 are both grounded. The gate of M1 is connected to the third port of the bandgap reference module, the drain of M1 is connected to the drain of M3, the drain of M2 is connected to the gate of M3, and the source of M3 is connected to an external high-level power supply. When the reference voltage output from the third port of the bandgap reference module is low, both M2 and M3 are turned on, and the external high-level power supply does not output the second voltage. When the reference voltage output from the third port of the bandgap reference module is high, M1 is turned on, and the external high-level power supply is used to output the second voltage.

[0102] Specifically, the low-level power management module includes: a bandgap reference module, a bias current module, and a low-dropout linear regulator. The first port of the bandgap reference module is connected to an external low-level power supply to receive a first voltage. The second port of the bandgap reference module is connected to the first port of the bias current module, and the third port of the bandgap reference module is connected to the second input port of the high-level power management module to output a reference voltage. The second port of the bias current module is connected to the third input port of the high-level power management module to output a first bias current. The third port of the bias current module is connected to the first port of the low-dropout linear regulator to output a second bias current. The second port of the low-dropout linear regulator is connected to the fourth input port of the high-level power management module to output a first bias voltage. The third port of the low-dropout linear regulator is connected to the second port of the signal path module to output a second bias voltage.

[0103] Specifically, the first input port of the high-level power management module is connected to an external high-level power supply to receive the second voltage.

[0104] Optionally, the transimpedance amplifier further includes a boost circuit module. The first port of the boost circuit module is connected to an external low-level power supply to receive a first voltage. The boost circuit module boosts the first voltage to generate a second voltage. The second port of the boost circuit module is connected to the first input port of a high-level power management module to output the second voltage.

[0105] Furthermore, the high-level power management module is also used to monitor the electrical signal generated by the photodetector and output the RSSI of the electrical signal from the second output port of the high-level power management module.

[0106] The optical receiver disclosed in this application improves system performance by increasing the reverse bias voltage applied to the photodetector, for example, to 4.6V, thereby reducing the junction capacitance and addressing the problem of degraded receiver sensitivity due to insufficient bandwidth at high transimpedance gain. Furthermore, replacing the APD with a PIN reduces design costs and ensures stable operation of the high-gain transimpedance amplifier within the dynamic range required for the application scenario.

[0107] Figure 3 This is a schematic diagram of another optical receiver 300 provided in an embodiment of this application. For example... Figure 3 As shown, the optical receiver includes a transimpedance amplifier and a photodiode D0.

[0108] The transimpedance amplifier includes a low-level power management module, a high-level power management module LDO_VDDH&RSSI, and a signal path module. Further, the low-level power management module includes a bandgap reference module (BG), a bias current module IBIAS, and a low-dropout linear regulator LDO. It should be understood that the low-level power-on circuit module is integrated into the bandgap reference module. The signal path module includes an RF resistor and amplifier #1 (e.g., TIA).

[0109] Optionally, the signal path module may also include devices such as power amplifiers, error amplifiers, etc.

[0110] It should be understood that the high-level power management module can be viewed as an integrated module of LDO and Received Signal Strength Indicator (RSSI), meaning that this module can simultaneously achieve regulated voltage output and control the photocurrent I of the photodiode. PD Monitoring is performed. The bias current module generates a reference current and outputs this reference current to other modules (e.g., the high-level power management module) via current mirrors of different scales as the bias current I. bias The bandgap reference module adds a voltage with a negative temperature coefficient to a voltage with a positive temperature coefficient to obtain a temperature-independent reference voltage V. bg This reference voltage is then transmitted to other modules (e.g., the high-level power management module).

[0111] It should be noted that the name of the high-level power management module is merely illustrative and is not specifically limited in this application.

[0112] For example, the first input port of the high-level power management module is connected to an external high-level power supply (e.g., 4.6V) to receive a second voltage. The first port of the bandgap reference module is connected to an external low-level power supply (e.g., 3.3V) to receive a first voltage. The second port of the bandgap reference module is connected to the first port of the bias current module, and the third port of the bandgap reference module is connected to the second input port of the high-level power management module to output a reference voltage V. bg The second port of the bias current module is connected to the third input port of the high-level power management module to output the first bias current I. bias The third port of the bias current module is connected to the first port of the LDO to output the second bias current I. bias The second port of the LDO is connected to the fourth input port of the high-level power management module to output the first bias voltage. The third port of the LDO is connected to the second port of amplifier #1 in the signal path module to output the second bias current I. bias The first output port PINK of the high-level power management module is connected to the cathode of photodiode D0 to output the third voltage. The anode of photodiode D0 is connected to the first input port PINA of the signal path module, and the first port of amplifier #1 is connected to PINA so that photodiode D0 operates under reverse bias. An RF resistor RF is connected between the input and output terminals of amplifier #1.

[0113] It should be noted that the power supply of the high-level power management module is managed and controlled by the low-level power management module. That is, the low-level power supply is turned on first, and then the high-level power supply is turned on, to ensure the correct power-on sequence and effectively protect the device from damage.

[0114] Specifically, when the reference voltage and / or the second bias voltage are greater than or equal to a preset threshold, the first input port of the high-level power management module receives a second voltage (e.g., 4.6V) output from an external high-level power supply, and generates a third voltage based on this second voltage. For example, the second voltage is regulated to obtain the third voltage.

[0115] For example, when photodiode D0 is not illuminated by a light signal, no photocurrent is generated. When photodiode D0 is illuminated by a light signal, and based on the voltage difference between the cathode and anode of the photodiode (e.g., the cathode voltage is 2.7V, the anode voltage is 0.6V, and the voltage difference is 2.1V), a photocurrent is generated, and the light signal is photoelectrically converted to generate an electrical signal, which is output to the first input port PINA of the signal path module. Under the action of amplifier #1 and RF resistor RF, the electrical signal undergoes power amplification and gain control to generate the output signal.

[0116] In addition, the high-level power management module is also used to control the photocurrent I generated by the photodiode D0. PD Monitoring is performed, and RSSI is output from the second output port of the high-level power management module. That is, RSSI is used to indicate the current intensity I of the light signal illuminating the photodetector D0. in .

[0117] It should be noted that complementary metal oxide semiconductor (CMOS) is a mainstream semiconductor process widely used in the implementation of various digital / analog signal processing chips, such as common communication basebands and analog transceivers. Compared to SiGe (silicon germanium) technology, TIA design in CMOS technology is more difficult, but CMOS technology has advantages in availability and cost. Therefore, the optical receiver 300 in this embodiment can adopt CMOS technology.

[0118] Alternatively, the optical receiver 300 in this embodiment may also use other integrated circuit processes, such as bipolar junction transistor (BJT) technology, silicon-on-insulator (SOI) technology, etc.

[0119] The device disclosed in this application, by introducing a high-level power management module, increases the reverse bias voltage on the loading PIN, thus ensuring that the receiving sensitivity of the optical receiver remains unaffected even with increased transimpedance. This is because a higher reverse bias voltage in the PIN receiver results in a smaller junction capacitance. Therefore, even with increased RF (the PIN input current is approximately 1 / 10 of the APD; to achieve the same performance, the RF increases by a factor of 10), the bandwidth remains unaffected, thereby avoiding a decrease in receiving sensitivity due to inter-symbol interference and ensuring the system's receiving performance.

[0120] Figure 4 This is a schematic diagram of the transimpedance amplifier 400 provided in an embodiment of this application. Figure 4As shown, the transimpedance amplifier includes operational amplifiers (OP1), OP2 and OP3, n-type metal oxide semiconductor field effect transistors (NMOS) M1, M2, M5, M6, M7, M8, M9 and M10, and p-type metal oxide semiconductor field effect transistors (PMOS) M3, M4, M11, M12 and M13.

[0121] Each NMOS or PMOS includes a gate (G), a drain (D), and a source (S).

[0122] Specifically, the gate G of M1 is connected to the third port of the bandgap reference module BG. The drain D of M1 is connected to the drain D of M3, and the drain D of M2 is connected to the gate G of M3 and the drain D of M4. The source S of M1, M2, M6, M8, and M10 are all grounded to VSS. The source S of M3 and M4 are both connected to the high-level power supply VDDH. The drain D of M5 is connected to the second port I of the bias current module IBIAS. bias The source (S) of M5 is connected to the drain (D) of M6, the source (S) of M7 is connected to the drain (D) of M8, and the source (S) of M9 is connected to the drain (D) of M10. The gates (G) of both M7 and M9 are connected to the gate (G) of M5, meaning M7 and M9 mirror the current of M5. The gates (G) of both M8 and M10 are connected to the gate (G) of M6, meaning M8 and M10 mirror the current of M6. The first port of OP1, the first port of OP2, the source (S) of M11, and the source (S) of M12 are connected to the drain (D) of M1. The second port of OP1 is connected to the third port of the bias current module IBIAS, the third port of OP1 is connected to the second port of OP2, and the fourth port of OP1 is connected to the gate (G) of M7. The third port of OP2, the drain (D) of M7, the drain (D) of M11, the third port of OP3, and PINK are connected. The fourth port of OP2, the gate (G) of M11, and the gate (G) of M12 are connected. The drain D of M12, the drain D of M9, the second port of OP3, and the source S of M13 are connected. The gate G of M13 is connected to the first port of OP3, and the drain of M13 is connected to RSSI.

[0123] It should be understood that when the voltage difference between the gate (G) and source (S) of an NMOS exceeds the threshold voltage, the NMOS enters the saturation region. In the saturation region, almost all the current received at the drain (D) flows through the NMOS to the source (S). When operating in the saturation region, the NMOS can be considered "on," and providing a voltage to the gate (G) to allow the NMOS to operate in the saturation region is called "on" NMOS. When the voltage difference between the gate (G) and source (S) of an NMOS does not exceed the threshold voltage, the NMOS enters the cutoff region. In the cutoff region, almost no current flows through the drain (D) to the source (S). When operating in the cutoff region, the NMOS can be considered "off," and providing a voltage to the gate (G) to allow the NMOS to operate in the cutoff region is called "off" NMOS.

[0124] Similarly, when the voltage difference between the gate (G) and source (S) of a PMOS does not exceed the threshold voltage, the PMOS enters the saturation region. In the saturation region, almost all current received at the source (S) flows through the PMOS to the drain (D). When operating in the saturation region, the PMOS can be considered "on," and supplying a voltage to the gate (G) to allow the PMOS to operate in the saturation region is called "on" PMOS. When the voltage difference between the gate (G) and source (S) of a PMOS exceeds the threshold voltage, the PMOS enters the cutoff region. In the cutoff region, almost no current received at the source (S) flows through the PMOS to the drain (D). When operating in the cutoff region, the PMOS can be considered "off," and supplying a voltage to the gate (G) to allow the PMOS to operate in the cutoff region is called "off" PMOS.

[0125] One possible implementation is when the input voltage V in When the voltage is 0, the gate voltage G of M2 is 1, M2 is turned on, and the voltage at the drain D terminal of M2 is charged to 0, which turns on M3, pulls the power supply VD to VDDH, and finally outputs 0 through the inverter.

[0126] Another possible implementation is when the input voltage V in When the value is 1, M1 is turned on, and VD is pulled to 0, eventually outputting VDDH through the inverter.

[0127] For example, OP1 generates two reference voltages, VREF1 and VREF2, via a current reference. VREF1 is transmitted to the second port of OP2 through the third port of OP1, and VREF2 is transmitted to the gate G of M7 through the fourth port of OP1. The difference between the two reference voltages is the gate-drain voltage of M7, i.e., VREF1 - VREF2 = VGD7. OP2 is used to track the gate G voltage of M11, ensuring that both the gate G voltage and the source S voltage of M11 are VREF1. Since the drain D of M11 is connected to both the drain D of M7 and the PIN anode, the current flowing through M11 is I.d M11=I in +I d M7, i.e., PINK=I in =I d M11-I d M7. Since M12 mirrors the current of M11, therefore I d M12=I d M11, at this time the RSSI current is RSSI=I d M12 - I d M9. Since M9 and M7 share the same current mirror of M5, the IL can be adjusted by changing the width-to-length ratio of the transistor. d M9=I d M7. Therefore, RSSI=PINK=I in This enables the monitoring of the PIN receiving current.

[0128] It should be understood that the specific structure of the optical receiver 300 described above is merely illustrative and may include other devices, such as error amplifiers, power amplifiers, etc., which are not specifically limited in this application.

[0129] It should also be understood that the bandgap reference module, bias current module, high-level power management module, signal path module, and other modules in the transimpedance amplifier disclosed in this application are not limited to the devices themselves. For example, detectors or couplers can be added to the high-level power management module. These power amplifier devices that improve power detection or other detection functions can all be represented by a high-level power management module and are also within the scope of protection of this application, and can be collectively referred to as high-level power management modules.

[0130] It should be noted that the bandgap reference module, bias current module, high-level power management module, and signal path module of the optical receiver 300 are functional modules, and this application does not specify a particular number for them. For example, the gain control effect of one amplifier #1 may not be sufficient, and multiple amplifiers can be used to perform multiple power amplification and gain control. This application does not specify a particular number for this.

[0131] Furthermore, the bandgap reference module, bias current module, high-level power management module, and signal path module in the optical receiver 300 can also be implemented in other ways, and this application does not specifically limit them. The matching device circuits used in the modules (e.g., the bandgap reference module, bias current module, high-level power management module, and signal path module) are also within the scope of protection of this application. For example, capacitors or inductors can be integrated into the signal path module as part of the signal path module.

[0132] It should be noted that the aforementioned bandgap reference module, bias current module, high-level power management module, and signal path module can be independent chip structures, forming a distributed transimpedance amplifier device (e.g., TIA), or they can be combined chip structures, forming an integrated transimpedance amplifier device through system-in-a-package (SIP) or board-level integration. This application does not specifically limit this. That is to say, through any combination of active and / or passive electrical components, the transimpedance amplifier provided above can be implemented on a single electronic chip, such as a single die, substrate, or printed circuit board (PCB). Alternatively, multiple electronic chips or electronic components can be implemented through direct or indirect coupling, such that the electronic components do not share dies, substrates, or PCBs, and / or the electronic components are not contained within the same electronic chip package.

[0133] The device disclosed in this application provides an integrated power management mode in which a photodetector (e.g., PIN) and a transimpedance amplifier (e.g., TIA) are powered separately. This mode limits the voltage of the PIN to a maximum voltage higher than that of the TIA, allowing the PIN to obtain a higher reverse bias voltage and performance. Simultaneously, through a specially designed PIN LDO startup circuit, a power-on sequence is achieved where the TIA is turned on first, followed by the PIN, effectively protecting the device from damage.

[0134] Figure 5 This is a schematic diagram of another optical receiver 500 provided in the embodiments of this application. The optical receiver 500 is similar in structure to the optical receiver 300 in Figure 3, except that the second voltage does not need to be introduced through an external high-level power supply VDDH. Instead, the first voltage generated by the low-level power supply VDDL is boosted by a boost circuit module to obtain the second voltage.

[0135] like Figure 5 As shown, the transimpedance amplifier includes a low-level power management module, a boost circuit module, a high-level power management module LDO_VDDH&RSSI, and a signal path module. The signal path module includes an RF resistor and an amplifier #a (e.g., TIA). Optionally, the signal path module may also include power amplifiers, error amplifiers, and other devices.

[0136] Specifically, the first port of the boost circuit module is connected to the low-level power management module (e.g., 3.3V) to receive a first voltage. The boost circuit module is used to boost the first voltage to generate a second voltage (e.g., 4.6V). The second port of the boost circuit module is connected to the first input of the high-level power management module to output the second voltage.

[0137] Other connection relationships between different modules in the optical receiver 500 can be found above. Figure 3 This will not be elaborated upon here. Furthermore, the working principle of the high-level power management module in the optical receiver 500 is the same as described above. Figure 4 The implementation method is similar and will not be repeated here.

[0138] It should be understood that the optical receiver 500 provided by this implementation method is mainly used in scenarios where external signals are introduced into the device through pins, such as TO packages, and in scenarios where the number of pins is limited.

[0139] It should be noted that the boost circuit module in the optical receiver 500 is a functional module and is not limited to the device itself. This application does not specifically limit its quantity or form (implementation). The matching circuitry used in the boost circuit module is also within the scope of this application. Furthermore, the aforementioned boost circuit module can be an independent chip structure or a combined chip structure; this application does not specifically limit this.

[0140] The device disclosed in this application provides an integrated power management mode in which a photodetector (e.g., PIN) and a transimpedance amplifier (e.g., TIA) are powered separately. This mode limits the voltage of the PIN to a maximum voltage higher than that of the TIA, allowing the PIN to obtain a higher reverse bias voltage and performance. Simultaneously, through a specially designed PIN LDO startup circuit, a power-on sequence is achieved where the TIA is turned on first, followed by the PIN, effectively protecting the device from damage.

[0141] Figure 6 This is a schematic flowchart of a signal processing method 600 provided in an embodiment of this application. Specifically, this method 600 can be applied to the aforementioned optical receivers 200 to 400. Figure 6 As shown, the specific implementation steps include the following multiple steps.

[0142] S610, the transimpedance amplifier obtains the first voltage.

[0143] The first voltage is used to power the transimpedance amplifier.

[0144] For example, the first voltage can be a low level. For example, 3.3V, or 3.3V±10%, or 3.3V±20%, the specific voltage value depends on the characteristics of the circuit design and the device itself, and this application does not make a specific limitation on it.

[0145] One possible implementation is that the transimpedance amplifier receives a first voltage from an external low-level power supply VDDL.

[0146] Alternatively, the transimpedance amplifier receives a high level from an external power supply and steps it down through an internal transformer to obtain a first voltage.

[0147] S620, a transimpedance amplifier, obtains a second voltage.

[0148] The second voltage is greater than the first voltage.

[0149] For example, the second voltage can be a high level, such as 5V, or 5V±10%, or 5V±20%. The specific voltage value depends on the circuit design or the characteristics of the device itself, and this application does not impose any specific limitations on it.

[0150] One possible implementation is that the transimpedance amplifier receives a second voltage from an external high-level power supply VDDH.

[0151] Another possible implementation involves the transimpedance amplifier receiving a first voltage from an external low-level power supply and boosting it to generate a second voltage. For example, the transimpedance amplifier could boost the first voltage using a boost circuit module or a transformer.

[0152] In this implementation, there is no need to introduce an external high-level power supply VDDH; the second voltage can be obtained by boosting the first voltage through a boost circuit module.

[0153] One possible implementation is that the transimpedance amplifier performs a first determination, which is used to determine the magnitude relationship between the reference voltage and the preset threshold. When the reference voltage is greater than or equal to the preset threshold, the transimpedance amplifier obtains a second voltage.

[0154] Another possible implementation involves a transimpedance amplifier performing a second determination, which determines the magnitude relationship between the second bias voltage and a preset threshold voltage, with the second bias voltage corresponding to the first voltage.

[0155] For example, the values ​​of the reference voltage and the second bias voltage can depend on the value of the first voltage. For instance, when the first voltage is 3.3V, or 3.3V ± 10%, or 3.3V ± 20%, the corresponding reference voltage is usually fixed, such as 1.2V, or 1.2V ± 10%, or 1.2V ± 20%. The specific reference voltage value depends on the characteristics of the device itself, and this application does not impose a specific limitation on it. Additionally, the preset threshold is generally 0.7V, and the value depends on the characteristics of the device itself; this application does not impose a specific limitation on it.

[0156] It should be noted that the power-on sequence of the low-level power supply in this application embodiment, which turns on first and then the high-level power supply, can effectively protect the device from damage.

[0157] S630, the transimpedance amplifier sends a third voltage to the cathode of the photodetector.

[0158] The third voltage is obtained by stabilizing the second voltage.

[0159] For example, the LDO module of the transimpedance amplifier regulates the second voltage (e.g., 4.6V) to obtain the third voltage (e.g., 3.8V).

[0160] The S640 is a transimpedance amplifier that receives electrical signals from the anode of a photodetector.

[0161] Among them, the electrical signal is generated by the photoelectric conversion of the optical signal by the photodetector.

[0162] Specifically, based on the voltage difference between the cathode and anode of the photodetector D0, the photodetector generates a photocurrent I when illuminated by a light signal. PD It also performs photoelectric conversion on the optical signal to generate an electrical signal.

[0163] The S650 is a transimpedance amplifier that amplifies electrical signals and outputs the amplified electrical signal.

[0164] For example, a transimpedance amplifier performs power amplification and gain control on an electrical signal to generate an output signal.

[0165] The method disclosed in this application increases the reverse bias voltage applied to the photodetector by acquiring a high level, thereby ensuring that the signal-to-noise ratio of the optical receiver does not deteriorate under the condition of increased transimpedance, and overcoming the impact of inter-symbol interference introduced by the reduction of receiver bandwidth on the receiver sensitivity.

[0166] It should be understood that the specific examples in the embodiments of this application are only to help those skilled in the art better understand the technical solutions of this application, and the above specific implementation methods can be considered as the optimal implementation methods of this application, rather than limiting the scope of the embodiments of this application.

[0167] This application also provides a communication device, including a processor and an interface. The processor can be used to execute the methods described in the above method embodiments.

[0168] It should be understood that the aforementioned processing device can be a chip. For example, the processing device can be a field-programmable gate array (FPGA), an application-specific integrated circuit (ASIC), a system-on-chip (SoC), a central processor unit (CPU), a network processor (NP), a digital signal processor (DSP), a microcontroller unit (MCU), a programmable logic device (PLD), or other integrated chips.

[0169] In implementation, each step of the above method can be completed by integrated logic circuits in the processor's hardware or by instructions in software. The steps of the method disclosed in the embodiments of this application can be directly implemented by a hardware processor, or by a combination of hardware and software modules in the processor. The software modules can reside in random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, registers, or other mature storage media in the art. This storage medium is located in memory, and the processor reads information from the memory and, in conjunction with its hardware, completes the steps of the above method. To avoid repetition, detailed descriptions are omitted here.

[0170] In the above embodiments, implementation can be achieved, in whole or in part, through software, hardware, firmware, or any combination thereof. When implemented in software, it can be implemented, in whole or in part, as a computer program product. The computer program product includes one or more computer instructions. When the computer instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium accessible to a computer or a data storage device such as a server or data center that integrates one or more available media. The available media may be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., high-density digital video discs (DVDs)), or semiconductor media (e.g., solid-state disks (SSDs)).

[0171] The terms “component,” “module,” “system,” etc., used in this specification are used to refer to computer-related entities, hardware, firmware, combinations of hardware and software, software, or software in execution. For example, a component can be, but is not limited to, a process running on a processor, a processor, an object, an executable file, an execution thread, a program, and / or a computer. As illustrated, applications running on computing devices and computing devices can both be components. One or more components may reside in a process and / or an execution thread, and components may be located on a single computer and / or distributed among two or more computers. Furthermore, these components can be executed from various computer-readable media on which various data structures are stored. Components can communicate, for example, via local and / or remote processes based on signals having one or more data packets (e.g., data from two components interacting with another component between a local system, a distributed system, and / or a network, such as the Internet interacting with other systems via signals).

[0172] Those skilled in the art will understand that the embodiments of this application can be provided as methods, apparatus, and systems. This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus, and systems according to embodiments of this application. Obviously, those skilled in the art can make various modifications and variations to the embodiments of this application without departing from the scope of the embodiments of this application. Therefore, if these modifications and variations to the embodiments of this application fall within the scope of the claims of this application and their equivalents, this application also intends to include these modifications and variations.

[0173] It should be understood that the specific examples in the embodiments of this application are only to help those skilled in the art better understand the technical solutions of this application, and the above specific implementation methods can be considered as the optimal implementation methods of this application, rather than limiting the scope of the embodiments of this application.

[0174] Those skilled in the art will recognize that the algorithmic steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, and such implementations should not be considered beyond the scope of this application.

[0175] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0176] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0177] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0178] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0179] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An optical receiver, characterized by, include: A transimpedance amplifier and a photodetector, wherein the transimpedance amplifier includes a low-level power management module, a high-level power management module, and a signal path module, wherein the first output port of the high-level power management module is connected to the cathode of the photodetector, and the first input port of the signal path module is connected to the anode of the photodetector; The low-level power management module is used to acquire a first voltage, which is used to power the transimpedance amplifier. The high-level power management module is used to obtain a second voltage, wherein the second voltage is greater than the first voltage; The high-level power management module is also used to output a third voltage to the cathode of the photodetector, the third voltage being obtained by stabilizing the second voltage; The signal path module is used to receive an electrical signal from the anode of the photodetector, the electrical signal being generated by the photodetector through photoelectric conversion of an optical signal; The signal path module is also used to amplify the electrical signal and output the amplified electrical signal. The low-level power management module includes: a bandgap reference module, a bias current module, and a low-dropout linear regulator; The first port of the bandgap reference module is connected to an external low-level power supply to receive the first voltage; The second port of the bandgap reference module is connected to the first port of the bias current module, and the third port of the bandgap reference module is connected to the second input port of the high-level power management module for outputting a reference voltage, which is determined based on the first voltage. The second port of the bias current module is connected to the third input port of the high-level power management module for outputting a first bias current; the third port of the bias current module is connected to the first port of the low-dropout linear regulator for outputting a second bias current, wherein the first bias current and the second bias current are determined based on the first voltage. The second port of the low-dropout linear regulator is connected to the fourth input port of the high-level power management module for outputting a first bias voltage; the third port of the low-dropout linear regulator is connected to the second port of the signal path module for outputting a second bias voltage, wherein the first bias voltage and the second bias voltage are determined based on the second bias current.

2. The optical receiver according to claim 1, characterized in that, The transimpedance amplifier is further configured to perform a first determination, wherein the first determination is used to determine the magnitude relationship between a reference voltage and a preset threshold, the reference voltage corresponding to the first voltage; and, The transimpedance amplifier is specifically used to acquire the second voltage when the determination result of the first determination is that the reference voltage is greater than or equal to the preset threshold.

3. The optical receiver according to claim 1 or 2, characterized in that, The transimpedance amplifier is further configured to perform a second determination, the second determination being used to determine the magnitude relationship between a second bias voltage and a preset threshold, the second bias voltage corresponding to the first voltage; and, The transimpedance amplifier is specifically used to acquire the second voltage when the determination result of the second determination is that the second bias voltage is greater than or equal to a preset threshold.

4. The optical receiver according to claim 1 or 2, characterized in that, The low-level power management module is also used to control the power supply of the high-level power management module to supply power to the signal path module, and to receive the first voltage; The high-level power management module is further configured to receive the second voltage from the first input port of the high-level power management module, perform voltage regulation on the second voltage to obtain the third voltage, and output the third voltage from the first output port of the high-level power management module.

5. The optical receiver according to claim 4, characterized in that, The first input port of the high-level power management module is connected to an external high-level power supply to receive the second voltage.

6. The optical receiver according to claim 4, characterized in that, The transimpedance amplifier also includes a boost circuit module, wherein: The first port of the boost circuit module is connected to an external low-level power supply to receive the first voltage. The boost circuit module is used to boost the first voltage to generate the second voltage; The second port of the boost circuit module is connected to the first input port of the high-level power management module, and is used to output the second voltage.

7. The optical receiver according to claim 4, characterized in that, The high-level power management module is also used to monitor the electrical signal generated by the photodetector and output the received signal strength indicator (RSSI) of the electrical signal from the second output port of the high-level power management module.

8. The optical receiver according to claim 1 or 2, characterized in that, The photodetector is a photodiode.

9. A transimpedance amplifier, characterized in that, The transimpedance amplifier includes a low-level power management module, a high-level power management module, and a signal path module. The first output port of the high-level power management module is connected to the cathode of the photodetector, and the first input port of the signal path module is connected to the anode of the photodetector. The low-level power management module is used to acquire a first voltage, which is used to power the transimpedance amplifier. The high-level power management module is used to obtain a second voltage, wherein the second voltage is greater than the first voltage; The high-level power management module is also used to output a third voltage to the cathode of the photodetector, the third voltage being obtained by stabilizing the second voltage; The signal path module is used to receive an electrical signal from the anode of the photodetector, the electrical signal being generated by the photodetector through photoelectric conversion of an optical signal; The signal path module is also used to amplify the electrical signal and output the amplified electrical signal. The low-level power management module includes: a bandgap reference module, a bias current module, and a low-dropout linear regulator; The first port of the bandgap reference module is connected to an external low-level power supply to receive the first voltage; The second port of the bandgap reference module is connected to the first port of the bias current module, and the third port of the bandgap reference module is connected to the second input port of the high-level power management module for outputting a reference voltage, which is determined based on the first voltage. The second port of the bias current module is connected to the third input port of the high-level power management module for outputting a first bias current; the third port of the bias current module is connected to the first port of the low-dropout linear regulator for outputting a second bias current, wherein the first bias current and the second bias current are determined based on the first voltage. The second port of the low-dropout linear regulator is connected to the fourth input port of the high-level power management module for outputting a first bias voltage; the third port of the low-dropout linear regulator is connected to the second port of the signal path module for outputting a second bias voltage, wherein the first bias voltage and the second bias voltage are determined based on the second bias current.

10. The transimpedance amplifier according to claim 9, characterized in that, The transimpedance amplifier is further configured to perform a first determination, wherein the first determination is used to determine the magnitude relationship between a reference voltage and a preset threshold, the reference voltage corresponding to the first voltage; and, The transimpedance amplifier is specifically used to acquire the second voltage when the determination result of the first determination is that the reference voltage is greater than or equal to the preset threshold.

11. The transimpedance amplifier according to claim 9 or 10, characterized in that, The transimpedance amplifier is further configured to perform a second determination, the second determination being used to determine the magnitude relationship between a second bias voltage and a preset threshold, the second bias voltage corresponding to the first voltage; and, The transimpedance amplifier is specifically used to acquire the second voltage when the determination result of the second determination is that the second bias voltage is greater than or equal to a preset threshold.

12. The transimpedance amplifier according to claim 9 or 10, characterized in that, The low-level power management module is also used to control the power supply of the high-level power management module and to supply power to the signal path module. The high-level power management module is further configured to receive the second voltage from the first input port of the high-level power management module, perform voltage regulation on the second voltage to obtain the third voltage, and output the third voltage from the first output port of the high-level power management module.

13. The transimpedance amplifier according to claim 12, characterized in that, The first input port of the high-level power management module is connected to an external high-level power supply to receive the second voltage.

14. The transimpedance amplifier according to claim 12, characterized in that, The transimpedance amplifier also includes a boost circuit module, wherein: The first port of the boost circuit module is connected to an external low-level power supply to receive the first voltage. The boost circuit module is used to boost the first voltage to generate the second voltage; The second port of the boost circuit module is connected to the first input port of the high-level power management module, and is used to output the second voltage.

15. The transimpedance amplifier according to claim 12, characterized in that, The high-level power management module is also used to monitor the electrical signal generated by the photodetector and output the received signal strength indicator (RSSI) of the electrical signal from the second output port of the high-level power management module.

16. A signal processing method, characterized in that, The method is applied to an optical receiver, which includes a transimpedance amplifier and a photodetector. The transimpedance amplifier includes a low-level power management module, a high-level power management module, and a signal path module. The first output port of the high-level power management module is connected to the cathode of the photodetector, and the first input port of the signal path module is connected to the anode of the photodetector. The low-level power management module is used to acquire a first voltage, which is used to power the transimpedance amplifier. The high-level power management module is used to obtain a second voltage, wherein the second voltage is greater than the first voltage; The high-level power management module is also used to send a third voltage to the cathode of the photodetector, the third voltage being obtained by stabilizing the second voltage; The signal path module is used to receive an electrical signal from the anode of the photodetector, the electrical signal being generated by the photodetector through photoelectric conversion of an optical signal; The signal path module is also used to amplify the electrical signal and output the amplified electrical signal. The low-level power management module includes: a bandgap reference module, a bias current module, and a low-dropout linear regulator; The first port of the bandgap reference module is connected to an external low-level power supply to receive the first voltage; The second port of the bandgap reference module is connected to the first port of the bias current module, and the third port of the bandgap reference module is connected to the second input port of the high-level power management module for outputting a reference voltage, which is determined based on the first voltage. The second port of the bias current module is connected to the third input port of the high-level power management module for outputting a first bias current; the third port of the bias current module is connected to the first port of the low-dropout linear regulator for outputting a second bias current, wherein the first bias current and the second bias current are determined based on the first voltage. The second port of the low-dropout linear regulator is connected to the fourth input port of the high-level power management module for outputting a first bias voltage; the third port of the low-dropout linear regulator is connected to the second port of the signal path module for outputting a second bias voltage, wherein the first bias voltage and the second bias voltage are determined based on the second bias current.

17. The method according to claim 16, characterized in that, The method further includes: The transimpedance amplifier performs a first determination, which is used to determine the magnitude relationship between a reference voltage and a preset threshold, wherein the reference voltage corresponds to the first voltage; and the transimpedance amplifier acquires a second voltage, including: When the determination result of the first determination is that the reference voltage is greater than or equal to the preset threshold, the transimpedance amplifier acquires the second voltage.

18. The method according to claim 16 or 17, characterized in that, The method further includes: The transimpedance amplifier performs a second determination, which is used to determine the magnitude relationship between the second bias voltage and a preset threshold, wherein the second bias voltage corresponds to the first voltage; and the transimpedance amplifier acquires the second voltage, including: When the determination result of the second determination is that the second bias voltage is greater than or equal to a preset threshold, the transimpedance amplifier acquires the second voltage.

19. The method according to claim 16 or 17, characterized in that, The transimpedance amplifier, which acquires the second voltage, further includes: The transimpedance amplifier receives the second voltage from an external high-level power supply.

20. The method according to claim 16 or 17, characterized in that, The transimpedance amplifier, which acquires the second voltage, further includes: The transimpedance amplifier boosts the first voltage to generate the second voltage.

21. An optical system device, characterized in that, include: The optical receiver as claimed in any one of claims 1 to 8, or the transimpedance amplifier as claimed in any one of claims 9 to 15.

22. The optical system device according to claim 21, characterized in that, The optical system equipment is an optical network unit (ONU) or an optical line terminal (OLT).

23. A chip, characterized in that, include: A processor for retrieving and running a computer program from memory, causing a transimpedance amplifier on which the chip is mounted to perform the method as described in any one of claims 16 to 20.

Images