Organometallic chemical vapor deposition apparatus

Abstract

The present invention relates to an organometallic chemical vapor deposition apparatus, and more particularly to an organometallic chemical vapor deposition apparatus having a gas supply part capable of uniformly supplying process gas and being easily installed and maintained.

Description

Technical Field

[0001] The present invention relates to an organometallic chemical vapor deposition apparatus, and more particularly to an organometallic chemical vapor deposition apparatus having a gas supply section that is capable of uniformly supplying process gases and is easy to set up and maintain. Background Technology

[0002] Metal-organic chemical vapor deposition (MOCVD) apparatuses supply a mixture of group III alkyl groups (organometallic feedstock gases), group V reactive gases, and high-purity carrier gases into a reaction chamber, where thermal decomposition occurs on a heated substrate, causing compound semiconductor crystals to grow. In such MOCVD apparatuses, a substrate is mounted on a pedestal, and gas is injected from the side, allowing semiconductor crystals to grow above the substrate.

[0003] In this case, when supplying process gas to the processing space where the substrate is processed, it is necessary to supply process gas to the processing space without mixing the process gas first, so that the process gas is supplied to the processing space uniformly.

[0004] In conventional metal-organic chemical vapor deposition (MOCVD) apparatuses, the processing space for substrate treatment is low and narrow, making the gas supply unit for supplying process gases extremely complex and difficult to design. Furthermore, maintenance requires the complete disassembly and reassembly of the gas supply unit, resulting in significant time and expense. Summary of the Invention

[0005] In order to solve the aforementioned problems, the object of the present invention is to provide an organometallic chemical vapor deposition apparatus having a gas supply section that can uniformly supply process gas and is easy to set up and maintain.

[0006] The object of the present invention as described above is achieved by an organometallic chemical vapor deposition apparatus, characterized in that it comprises: a chamber providing a processing space for processing a substrate; a substrate support disposed inside the chamber and holding the substrate; and a gas supply unit comprising a gas supply section for providing the process gas and a purge gas, and a guide assembly connected to the gas supply section to guide the process gas to be uniformly supplied to the processing space and detachably connected thereto, the guide assembly comprising: a plurality of gas guide plates inclined toward the processing space at a predetermined angle to guide the process gas toward the processing space; and a plurality of fixing portions pressurizing and fixing the rear ends of the plurality of gas guide plates.

[0007] Here, the fixing part may include: a plurality of first fixing parts that contact the upper rear end of the plurality of gas guide plates respectively for pressurization and fixing; and a plurality of second fixing parts that contact the lower rear end of the plurality of gas guide plates respectively for pressurization and fixing. The guiding assembly further includes: a third fixing part that fixes the side portion of at least one of the plurality of gas guide plates; and a frame that pressurizes and fixes the first fixing parts and the second fixing parts.

[0008] Alternatively, a first inclined portion and a second inclined portion may be formed at the same angle as the inclination of the gas guide plate, one below the first fixing portion and the other above the second fixing portion.

[0009] Furthermore, the organometallic chemical vapor deposition apparatus may further include: an additional fixing part, wherein one of the plurality of second fixing parts supports the lower part of the second-third fixing part located below the lowermost second-third fixing part.

[0010] Alternatively, the first fixing parts provided below the uppermost first fixing part among the plurality of first fixing parts may be configured as a pair and located on both sides of the rear end portion of the gas guide plate, and the space between the pair of first fixing parts and between the gas guide plates may form a supply port for supplying the process gas.

[0011] Alternatively, the organometallic chemical vapor deposition apparatus may further include: a barrier cover disposed above the substrate support to provide the processing space between the barrier cover and the substrate support, wherein the front end of the uppermost first gas guide plate of the plurality of gas guide plates is connected to the barrier cover.

[0012] Alternatively, the front end of the gas guide plate located below the first gas guide plate may extend longer than the first gas guide plate and be inserted into the space between the substrate support and the blocking cover.

[0013] According to the present invention having the aforementioned structure, process gases can be supplied uniformly and can be easily set up and maintained. Attached Figure Description

[0014] Figure 1 This is a side view of an organometallic chemical vapor deposition apparatus according to an embodiment of the present invention.

[0015] Figure 2 This is a side cross-sectional view showing the structure of the gas supply section.

[0016] Figure 3 This is a 3D diagram of the gas supply department.

[0017] Figure 4 Is Figure 3 A side perspective view of the gas supply unit taken along its length.

[0018] Figure 5 yes Figure 4 A magnified view of a portion of the image.

[0019] Figure 6 This is a diagram showing one of the second fixing parts. Detailed Implementation

[0020] Hereinafter, the organometallic chemical vapor deposition apparatus according to an embodiment of the present invention will be observed in detail with reference to the accompanying drawings.

[0021] Figure 1 This is a cross-sectional view showing the structure of an organometallic chemical vapor deposition apparatus 1000 according to an embodiment of the present invention.

[0022] Reference Figure 1 The organometallic chemical vapor deposition apparatus 1000 includes a chamber 10, a substrate support 20, and a gas supply unit 30.

[0023] The chamber 10 may include an outer chamber 15 and an inner chamber 40 providing a processing space 46 for processing the substrate W inside the outer chamber 15.

[0024] The external chamber 15 may include a chamber cover 11 covering the upper part, an outer wall portion 12 fastened to the chamber cover 11 and covering the side of the chamber, and a bottom flange portion 13 forming the lower bottom surface of the chamber.

[0025] The chamber cover 11 can be detachably fastened to the outer wall portion 12 by fastening components such as bolts, and a cooling flow path 11a can be formed in the chamber cover 11. It is configured to allow a coolant such as cooling water or cooling gas to flow in the cooling flow path 11a, thereby cooling the chamber 10 which is heated by the high temperature generated in the deposition process within the chamber 10.

[0026] Additionally, a sensor tube 52 may be provided in the chamber cover 11 as a light measurement channel for an optical sensor 51 that performs optical measurement of a thin film deposited on the substrate W within the inner chamber 40. The sensor tube 52 may be configured to extend through both the chamber cover 11 and the inner chamber 40. Here, it may be configured to introduce purge gas into the sensor tube 52 to prevent reactive gas from escaping from the inner chamber 40 into the sensor tube 52.

[0027] The outer wall portion 12 is fastened to the chamber cover 11 and is configured to cover the side of the inner chamber 40. An exhaust port 14 is formed in the outer wall portion 12, and the exhaust port 14 is connected to a gas discharge line (not shown). After the deposition process is completed, the reaction gas remaining in the processing space 46 is discharged to the outside of the chamber 10 through the exhaust port 14 and the gas discharge line (not shown).

[0028] On the other hand, a bottom flange portion 13 is provided below the outer chamber 15. A cooling flow path 13a can be formed in the bottom flange portion 13. The cooling flow path 13a is configured to allow the flow of a coolant such as cooling water or cooling gas to cool the chamber 10, which is heated by the high temperature generated in the deposition process within the inner chamber 40.

[0029] Additionally, a substrate support 20 for placing the substrate W is disposed inside the internal chamber 40. The substrate support 20 includes a heating coil 24 for heating the substrate W. For example, the substrate support 20 includes a heater block 21 for placing and heating the substrate W, a shaft 22 for supporting and rotating the heater block 21, a sealing portion 23, and a heating coil 24 for inductively heating the heater block 21 to heat the substrate W. In this case, the heating coil 24 may be configured to heat the side of the heater block 21.

[0030] On the other hand, a blocking cover 44 is provided above the substrate support 20. The space between the blocking cover 44 and the heater block 21 corresponds to the processing space 46. Process gas supplied from the aforementioned gas supply unit 30 can be supplied to the substrate W within the processing space 46. Gases in the process gas that do not participate in the reaction are discharged to the outside of the chamber 10 through the aforementioned exhaust port 14 and the gas discharge line (not shown).

[0031] The distance between the barrier cover 44 and the heater block 21 is an important factor for the smooth processing of the substrate W, and therefore can be determined in advance. In this case, it is not easy to adjust the height of the internal chamber 40 connected by the barrier cover 44, so it is preferable to adjust the thickness of the barrier cover 44 to adjust the distance between the barrier cover 44 and the heater block 21.

[0032] On the other hand, the gas supply unit 30 supplies process gas and purge gas toward the substrate W disposed in the processing space 46. When supplying the process gas, it is necessary to supply the process gas uniformly toward the substrate W.

[0033] Therefore, the gas supply unit 30 includes: a gas supply unit 350 for supplying the process gas and the purge gas; and a guide assembly 300 connected to the gas supply unit 350 to guide the process gas to be supplied evenly to the processing space 46 and is detachably connected to it.

[0034] Figure 2 This is a side cross-sectional view showing the structure of the gas supply section. Figure 3 This is a 3D view of the gas supply department.

[0035] Reference Figure 2 as well as Figure 3 The gas supply unit 350 serves to supply various gases, including process gases and purging gases, to the guiding component 300.

[0036] For example, the gas supply unit 350 may include a process gas supply source (not shown) for storing process gas, gas inflow ports 352, 354, 356, and 385 connected to the process gas supply source, and connection flow paths 363, 365, and 367 connecting the gas inflow ports 352, 354, 356, and 385 and the guide assembly 300.

[0037] The process gases can be configured to perform processing processes such as deposition on the substrate W, thereby providing multiple process gas supply sources.

[0038] It may be equipped with gas inflow ports 352, 354, 356, and 385 respectively connected to the plurality of process gas supply sources, and the gas inflow ports 352, 354, 356, and 385 are connected to and supported on the support frame 349.

[0039] The plurality of gas inflow ports 352, 354, 356, and 385 can be composed of process gas inflow ports 352, 354, and 356 for supplying process gas and purge gas inflow port 385 for supplying purge gas. The process gas inflow ports 352, 354, and 356 are shown as three, but are not limited to this and can be adjusted appropriately.

[0040] The process gas inlet ports 352, 354, and 356 can be connected to the guide assembly 300 via connecting flow paths 363, 365, and 367. The connecting flow paths 363, 365, and 367 respectively provide flow spaces 362, 364, and 366 on their inner sides for the process gas to flow into the guide assembly 300.

[0041] The guiding component 300 uniformly supplies the process gas toward the substrate W within the processing space 46, thereby enabling the processing of the substrate W to be smoothly and repeatedly reproduced.

[0042] For example, the guiding assembly 300 may include a plurality of gas guide plates 310 that are inclined toward the processing space 46 at a predetermined angle to guide the process gas toward the processing space 46, and a plurality of fixing portions 320, 330 that pressurize and fix the rear ends of the plurality of gas guide plates 310. Furthermore, the fixing portions 320, 330 may include a plurality of first fixing portions 320 that are in contact with the upper surface of the rear ends of the plurality of gas guide plates 310 for pressurization and fixation, and a plurality of second fixing portions 330 that are in contact with the lower surface of the rear ends of the plurality of gas guide plates 310 for pressurization and fixation.

[0043] In addition, the guide assembly 300 may also include a third fixing part 305 for fixing the side portions of the plurality of gas guide plates 310 and a frame part 340 for pressurizing and fixing the first fixing part 320 and the second fixing part 330.

[0044] The frame 340 may include a flow path frame 344 connected to the connecting flow paths 363, 365, 367 and having inner flow paths 344A, 344B, 344C formed on its inner side for the flow of process gas; an upper frame 342 that presses the first fixing part 320 and the second fixing part 330 from above; a lower frame 348 that presses the first fixing part 320 and the second fixing part 330 from below; a side frame 346 connecting the upper frame 342 and the lower frame 348; and a base frame 341.

[0045] The flow path frame 344 is connected to the aforementioned connecting flow paths 363, 365, and 367 to supply process gas toward the gas guide plate 310. For this purpose, inner flow paths 344A, 344B, and 344C for the flow of process gas are formed on the inner side of the flow path frame 344. The number of inner flow paths 344A, 344B, and 344C corresponds to the number of connecting flow paths 363, 365, and 367. In this case, when it is necessary to change the number of inner flow paths 344A, 344B, and 344C, the number of inner flow paths can be adjusted by assembling the frame of the flow path frame 344 in a segmented or stacked manner.

[0046] On the other hand, the upper frame 342 and the lower frame 348 serve to apply pressure to the first fixing part 320 and the second fixing part 330 from above and below, respectively. For example, the first fixing part 320 and the second fixing part 330 are applied pressure by fastening the upper frame 342 and the lower frame 348 with the upper bolt 343 and the lower bolt (not shown), thereby fixing the gas guide plate 310 at a predetermined angle.

[0047] In this case, the upper frame 342 and the lower frame 348 are connected on the side by the side frame 346 to fix and prevent the first fixing part 320, the second fixing part 330 and the gas guide plate 310 from tilting in the horizontal direction.

[0048] Alternatively, a base frame 341 may be provided below the frame portion 340, and the base frame 341 may be connected to the chamber 10.

[0049] On the other hand, when multiple process gases are supplied, the process gases need to be supplied to the processing space 46 without prior mixing and then mixed. Therefore, a gas introduction space 47 is required to allow the process gases to be supplied to the processing space 46 individually. The gas introduction space 47 can be defined, for example, as the space between the aforementioned internal chamber 40 and the gas introduction plate 49.

[0050] However, the distance between the blocking cover 44 and the heater block 21 corresponding to the processing space 46 can be made very small so that the processing of the substrate W can be carried out smoothly.

[0051] Therefore, in order to guide the process gas from the relatively wide gas inlet space 47 to the relatively narrow and high processing space 46, the gas guide plate 310 that guides the process gas needs to be tilted at an appropriate angle.

[0052] exist Figure 2 as well as Figure 3 In this configuration, the gas guide plate 310 is tilted downwards at a predetermined angle and extends toward the processing space 46.

[0053] In this case, the tilt angle of at least one of the plurality of gas guide plates 310 may be different from the tilt angle of the other gas guide plate 310.

[0054] For example, the first gas guide plate 312, located at the top of the plurality of gas guide plates 310, may have the largest tilt angle, while the third gas guide plate 316, located at the bottom of the plurality of gas guide plates 310, may have the smallest tilt angle. However, the angles of such gas guide plates 310 may be appropriately changed depending on the configuration and size of the gas introduction space 47 and the processing space 46.

[0055] On the other hand, the length of at least one of the plurality of gas guide plates 310 may be different from the length of the other gas guide plate 310.

[0056] For example, the first gas guide plate 312, located at the top of the plurality of gas guide plates 310, may be the shortest, while the second gas guide plate 314 and the third gas guide plate 316, located below the first gas guide plate 312, may be relatively longer. That is, the front ends of the second gas guide plate 314 and the third gas guide plate 316 may extend longer than the first gas guide plate 312 and be inserted into the space between the barrier cover 44 and the heater block 21.

[0057] This is because, as mentioned above, the height of the processing space 46 is shorter than the height of the gas inlet space 47, making it difficult to insert the front ends of all the gas guide plates 310 into the space between the barrier cover 44 and the heater block 21.

[0058] At this time, the front end of the first gas guide plate 312 can be connected to the blocking cover 44. For example, a fixing groove 45 can be formed in the blocking cover 44, and the front end of the first gas guide plate 312 can be inserted and fixed in the fixing groove 45 to maintain the tilt angle of the first gas guide plate 312.

[0059] On the other hand, the front ends of the second gas guide plate 314 and the third gas guide plate 316 are inserted into the space between the blocking cover 44 and the heater block 21, so the front ends of the second gas guide plate 314 and the third gas guide plate 316 may not be supported by the blocking cover 44. In this case, the front ends of the second gas guide plate 314 and the third gas guide plate 316 may droop downwards.

[0060] In this invention, a third fixing part 305 is provided to fix the side portion of at least one of the plurality of gas guide plates 310 to prevent the front ends of the second gas guide plate 314 and the third gas guide plate 316 from falling off.

[0061] For example, side grooves 315 and 317 can be formed on the side surfaces of the second gas guide plate 314 and the third gas guide plate 316, respectively. In this case, a fixing protrusion (not shown) that inserts into the side grooves 315 and 317 can be formed in the third fixing part 305. When the second gas guide plate 314 and the third gas guide plate 316 are provided, the side surfaces of the second gas guide plate 314 and the third gas guide plate 316 are supported by the third fixing part 305, thereby preventing the second gas guide plate 314 and the third gas guide plate 316 from falling above a predetermined angle.

[0062] In this embodiment, the gas guide plate 310 is made of quartz, but its material is not particularly limited and can also be a guide plate made of metal.

[0063] On the other hand, when the gas guide plate 310 is tilted at a predetermined angle, the upper and lower parts of the rear end of the gas guide plate 310 are fixed by the aforementioned first fixing part 320 and second fixing part 330, thereby maintaining the angle of the gas guide plate.

[0064] Figure 4 Is Figure 3 A side perspective view of the gas supply unit 30 taken along its length. Figure 5 yes Figure 4 A magnified view of a portion of the image.

[0065] Reference Figure 2 , Figure 4 as well as Figure 5 The first fixing part 320 is disposed above the plurality of gas guide plates 310 and pressurizes and fixes the upper rear end of the gas guide plate 310. The second fixing part 330 is disposed below the plurality of gas guide plates 310 and pressurizes and fixes the lower rear end of the gas guide plate 310.

[0066] The first fixing portion 320 and the second fixing portion 330 can be made of synthetic resin. For example, the first fixing portion 320 and the second fixing portion 330 can be made of engineering plastic or super engineering plastic. In addition, the first fixing portion 320 and the second fixing portion 330 can be formed of any one or a combination of two or more selected from polysulfone (PSU), polyarylate (PAR), polyetherimide (PEI), polyethersulfone (PES), polyphenylene sulfide (PPS), polyimide (PI), polytetrafluoroethylene (PTFE), and polyetheretherketone (PEEK).

[0067] In the present invention, the first fixing part 320 and the second fixing part 330 can be made of synthetic resins with different strengths. For example, the first fixing part 320 can be made of polytetrafluoroethylene and the second fixing part 330 can be made of polyimide, or vice versa.

[0068] Because when both the first fixing part 320 and the second fixing part 330 are made of high-strength synthetic resin, the gas guide plate 310 may deform or be damaged when pressure is applied. In particular, when the gas guide plate 310 is made of quartz, it is prone to damage and breakage.

[0069] Therefore, by making the first fixing part 320 and the second fixing part 330 have different strengths, when pressure is applied through the frame part 340, the deformation caused by the pressure is absorbed by the fixing part with relatively low strength, thereby preventing damage and breakage of the gas guide plate 310.

[0070] On the other hand, the uppermost of the plurality of first fixing portions 320, the first-1 fixing portion 322, presses against the rear end of the first gas guide plate 312. The second first-2 fixing portion 324 is disposed between the second-1 fixing portion 332 and the second gas guide plate 314, and presses against the rear end of the second gas guide plate 314. Furthermore, the first-3 fixing portion 326 is disposed between the second-2 fixing portion 334 and the third gas guide plate 316, and presses against the rear end of the third gas guide plate 316.

[0071] On the other hand, the uppermost of the plurality of second fixing parts 330, the second-first fixing part 332, is disposed between the first gas guide plate 312 and the first-second fixing part 324, and presses against the lower rear end of the first gas guide plate 312. The second-second fixing part 334 is disposed between the second gas guide plate 314 and the first-third fixing part 326, and presses against the upper rear end of the second gas guide plate 314. In addition, the second-third fixing part 336 presses against the lower rear end of the third gas guide plate 316 from below.

[0072] In this case, an additional fixing part 328 may be provided to support the second-third fixing part 336. That is, the additional fixing part 328 is located below the second-third fixing part 336 and supports the second-third fixing part 336 from below. The additional fixing part 328 can be supported by the aforementioned base frame 341 and gas inlet plate 49.

[0073] On the other hand, as described above, the gas guide plate 310 is tilted towards the processing space 46 at a predetermined angle. In this configuration, if the first fixing part 320 and the second fixing part 330 apply pressure to the upper or lower part of the rear end of the gas guide plate 310 via a horizontal plane, the front end of the gas guide plate 310 is lifted and tilted from the predetermined angle.

[0074] Therefore, a first inclined portion 323 and a second inclined portion 333A, 334A, and 336A with the same angle as the inclination of the gas guide plate 310 can be formed on the lower part of the first fixing portion 320 and the upper part of the second fixing portion 330, respectively.

[0075] The first inclined portion 323 of the first fixing portion 320 and the second inclined portions 333A, 334A, and 336A of the second fixing portion 330 are inclined at the same angle as the setting angle of the gas guide plate 310. Therefore, when the first fixing portion 320 and the second fixing portion 330 are pressed from above and below by the upper frame 342 and the lower frame 348, the inclination angle of the gas guide plate 310 can also be maintained at the same predetermined angle.

[0076] In addition, through the first inclined portion 323 and the second inclined portions 333A, 334A, and 336A, the first fixed portion 320 and the second fixed portion 330 respectively make surface contact with the gas guide plate 310, thereby increasing the contact area. The gas guide plate 310 can be prevented from being separated by friction and can be firmly fixed.

[0077] on the other hand, Figure 6 The figure shows the 2-1 fixing part 332. Figure 6 (A) is the upper perspective view of the second-first fixing part 332. Figure 6 (B) is a lower perspective view of the second-first fixing part 332.

[0078] Reference Figure 6 The second-1 fixing part 332 may include the aforementioned second inclined part 333A and a main body part 333C connected to the second inclined part 333A. The main body part 333C may have fastening holes 333D on both sides. Upper bolts 343 for fastening the upper frame 342 can be fastened through the fastening holes 333D.

[0079] On the other hand, a first recess 333B may be formed below the second-first fixing portion 332. The first recess 333B may be formed below the main body portion 333C with a predetermined width and depth.

[0080] Reference Figures 4 to 6 When the second-first fixing part 332 is installed on the guide assembly 300, the second-first fixing part 332 is inserted and fixed close to the underside of the first frame 370 of the frame part 340. In this case, the first protrusion 372 formed in the center of the first frame 370 is inserted into the first recess 333B to support the second-first fixing part 332.

[0081] On the other hand, the second-2nd fixing part 334 and the second-3rd fixing part 336, which are installed below the second-1st fixing part 332, also have a second recess 334B and a third recess 336B, respectively. Therefore, when the second-2nd fixing part 334 and the second-3rd fixing part 336 are installed on the guide assembly 300, the second-2nd fixing part 334 and the second-3rd fixing part 336 are inserted and fixed close to the underside of the second frame 374 and the third frame 377 of the frame part 340. In this case, the second protrusion 375 and the third protrusion 378, which protrude from the center of the second frame 374 and the third frame 377, are inserted into the second recess 334B and the third recess 336B, respectively, to support the second-2nd fixing part 334 and the second-3rd fixing part 336.

[0082] On the other hand, the situation regarding the arrangement of the gas guide plate 310 is as follows. First, with the second and third fixing portions 336 in place, the third gas guide plate 316 is inserted along the top of the second and third fixing portions 336. In this case, the rear end of the third gas guide plate 316 abuts against the front end of the third bracket 377, thus determining the protruding length of the third gas guide plate 316. Although not shown, the front end of the third bracket 377 can be inclined to correspond to the inclination of the third gas guide plate 316. As a result, the front end of the third bracket 377 contacts the rear end face of the third gas guide plate 316, allowing for a large contact area and firm support.

[0083] Similarly, when the second gas guide plate 314 and the first gas guide plate 312 are provided, the rear end of each gas guide plate abuts against the front end of the second frame 374 and the first frame 370 to determine the protrusion length. In addition, the front end of the second frame 374 and the first frame 370 may also be inclined to correspond to the setting inclination of the second gas guide plate 314 and the first gas guide plate 312.

[0084] On the other hand, the first-1 fixing part 322 can extend elongated to cover the entire upper part of the rear end portion of the first gas guide plate 312. However, if the first-2 fixing part 324 and the first-3 fixing part 326 are also formed in the same way as the first-1 fixing part 322, it is difficult to provide a supply port capable of supplying process gas.

[0085] Therefore, the first-2 fixing part 324 and the first-3 fixing part 326, which are located below the uppermost first fixing part 322 among the plurality of first fixing parts 320, and the additional fixing part 328 can be configured as a pair and located on both sides of the rear end portion of the gas guide plate 310 respectively.

[0086] That is, such as Figure 4 As shown, the space between the first gas guide plate 312 and the second gas guide plate 314, and between the pair of first-second fixing parts 324, forms a first supply port 32 for supplying the first process gas. Additionally, the space between the second gas guide plate 314 and the third gas guide plate 316, and between the pair of first-third fixing parts 326, forms a second supply port 34 for supplying the second process gas. The space between the third gas guide plate 316 and the gas inlet plate 49, and between the pair of additional fixing parts 328, forms a third supply port 36 for supplying the third process gas.

[0087] The above description refers to preferred embodiments of the present invention. However, those skilled in the art can make various modifications and alterations to the present invention without departing from the concept and scope of the invention as set forth in the appended claims. Therefore, any modifications that substantially include the constituent elements of the claims of the present invention should be considered to be included within the technical scope of the present invention.

Claims

1. An organometallic chemical vapor deposition apparatus, characterized in that, have: A chamber provides a processing space for handling the substrate; A substrate support portion is disposed inside the cavity and holds the substrate; and The gas supply unit includes a gas supply section for supplying process gas and purge gas, and a guide assembly connected to the gas supply section to guide the process gas to be supplied evenly to the processing space and is detachably connected to it. The guiding assembly includes: a plurality of gas guide plates, inclined at a predetermined angle toward the processing space to guide the process gas toward the processing space; and a plurality of fixing portions, which pressurize and fix the rear ends of the plurality of gas guide plates. The fixing part includes: a plurality of first fixing parts that contact the upper rear end of the plurality of gas guide plates respectively for pressurization and fixing; and a plurality of second fixing parts that contact the lower rear end of the plurality of gas guide plates respectively for pressurization and fixing. The first fixing part and the second fixing part are manufactured to have different strengths.

2. The organometallic chemical vapor deposition apparatus according to claim 1, characterized in that, The guiding assembly further includes: a third fixing part for fixing the side portion of at least one of the plurality of gas guide plates; and a frame part for pressurizing and fixing the first fixing part and the second fixing part.

3. The organometallic chemical vapor deposition apparatus according to claim 2, characterized in that, A first inclined portion and a second inclined portion are formed at the same angle as the inclination of the gas guide plate, one below the first fixing portion and the other above the second fixing portion.

4. The organometallic chemical vapor deposition apparatus according to claim 2, characterized in that, The organometallic chemical vapor deposition apparatus also features: An additional fixing part supports the lower part of the second-third fixing part from below the lowermost second-third fixing part among the plurality of second fixing parts.

5. The organometallic chemical vapor deposition apparatus according to claim 2, characterized in that, The first fixing parts, which are located below the uppermost first fixing part, are configured as a pair and are respectively located on both sides of the rear end portion of the gas guide plate. The space between the pair of first fixing parts and between the gas guide plate forms a supply port for supplying the process gas.

6. The organometallic chemical vapor deposition apparatus according to claim 2, characterized in that, The organometallic chemical vapor deposition apparatus also features: A blocking cover is disposed above the substrate support portion, thereby providing the processing space between the cover and the substrate support portion. The front end of the first gas guide plate, which is located at the top of the plurality of gas guide plates, is connected to the blocking cover.

7. The organometallic chemical vapor deposition apparatus according to claim 6, characterized in that, The front end of the gas guide plate located below the first gas guide plate extends longer than the first gas guide plate and is inserted into the space between the substrate support and the blocking cover.

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