A silicon-based OLED dark spot repairing process

Abstract

The application discloses a silicon-based OLED dark spot repairing process, which comprises the following steps: S1, after wafer evaporation of an organic layer, a cathode IZO film layer is formed by sputtering; S2, an Al layer is formed on the cathode IZO film layer by sputtering, and the high drilling property of Al is utilized, so that Al drills into the space between the IZO cathode and the microparticle; S3, by applying a reverse voltage, the circuit between the microparticle and the IZO cathode is disconnected, short circuit is avoided, and dark spot repairing is completed. Anode and cathode lead pads are designed, so that in the process of voltage breakdown, only two input pads need to be applied with voltage, voltage breakdown processes of hundreds of dies in the wafer are simultaneously completed, the repairing is efficient, and the relative cost is relatively low.

Description

Technical Field

[0001] This invention relates to the field of silicon-based OLED technology, and in particular to a silicon-based OLED dark spot repair process. Background Technology

[0002] In the manufacturing of silicon-based OLEDs, one of the biggest factors affecting the yield of silicon-based OLEDs is foreign matter that falls or sputters onto the cathode or cathode during the evaporation or IZO process. This can cause short circuits in the anode and cathode, resulting in the pixels not emitting light and thus forming dark spots.

[0003] Currently, for silicon-based OLEDs, the main approach is to reduce particles by controlling foreign matter during production, or by using laser repair methods. However, the repair efficiency is too low, the process is difficult, and the equipment required is numerous and expensive.

[0004] In the panel industry, for bottom-emitting cathodes Al, the front A-CShort can be repaired through P-Aging (voltage breakdown). However, this method cannot be applied to silicon-based OLEDs at present, mainly because the cathode structure is different and the pinning method cannot be used. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides a silicon-based OLED dark spot repair process that can effectively avoid short circuits between the anode and cathode, thereby achieving dark spot repair.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows:

[0007] This silicon-based OLED dark spot repair process includes the following steps:

[0008] S1. After the organic layer is deposited on the wafer, the cathode IZO film is completed by sputtering.

[0009] S2. An Al layer is formed on the cathode IZO film by sputtering. Taking advantage of Al's high penetrability, Al will penetrate into the space between the IZO cathode and the particles.

[0010] S3. By applying a reverse voltage, the circuit between the microparticles and the IZO cathode is broken, preventing short circuits and completing the dark spot repair.

[0011] in,

[0012] After step S3, the surface Al is removed by an etching process.

[0013] After step S3, the surface Al is completely oxidized into a dense AlOx layer through oxidation.

[0014] In step S3, a reverse voltage is applied to the voltage breakdown chamber by means of an input voltage breakdown chamber.

[0015] Before step S1, during wafer design, all cathode leads are gathered at the negative input terminal, and all anode leads are gathered at the positive input terminal.

[0016] After step S3, oxidation is performed using the Plasma process.

[0017] A certain amount of water and oxygen are introduced into the voltage breakdown chamber.

[0018] Both the cathode lead and the anode lead are designed to be outside the cutting line.

[0019] The wafer packaging process involves cutting the die to sever both the cathode and anode leads.

[0020] Compared with the prior art, the present invention has the following advantages:

[0021] This silicon-based OLED dark spot repair process is rationally designed. By sputtering an Al layer on the IZO cathode, the Al will penetrate between the IZO and the microparticles due to its high penetrability. By applying a reverse voltage, the circuit between the microparticles and the IZO cathode is broken, avoiding short circuits between the cathode and anode, thereby achieving dark spot repair. Attached Figure Description

[0022] The following is a brief explanation of the contents of each of the accompanying drawings and the markings in the drawings:

[0023] Figure 1 This is a schematic diagram illustrating the repair process of the present invention.

[0024] Figure 2 This is a schematic diagram of the silicon-based OLED wafer of the present invention.

[0025] Figure 3 for Figure 2 A magnified view of a portion of the image.

[0026] Figure 4 This is a schematic diagram of the lead wires of the present invention.

[0027] Figure 5 This is a schematic diagram of the repair process of the present invention. Figure 1 .

[0028] Figure 6 This is a schematic diagram of the repair process of the present invention. Figure 2 . Detailed Implementation

[0029] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and through the description of the examples.

[0030] like Figures 1 to 6 As shown, this silicon-based OLED dark spot repair process includes the following steps:

[0031] S1. After the organic layer is deposited on the wafer, the cathode IZO film is completed by sputtering.

[0032] S2. An Al layer is formed on the cathode IZO film by sputtering. Taking advantage of Al's high penetrability, Al will penetrate into the space between the IZO cathode and the particles.

[0033] S3. By applying a reverse voltage, the circuit between the microparticles and the IZO cathode is broken, preventing short circuits and completing the dark spot repair.

[0034] Meanwhile, given the small size and large number of dies in silicon-based OLED products, it is impossible to apply reverse voltage to each die individually by pinning it. This invention uses a cathode and anode lead pad design to achieve voltage breakdown of hundreds of dies in the wafer simultaneously by applying voltage to only two input pads during the voltage breakdown process. This results in efficient dark spot repair at a relatively low cost.

[0035] Furthermore, by introducing a voltage breakdown chamber, a reverse voltage is applied within the voltage breakdown chamber; a certain amount of water and oxygen are introduced into the voltage breakdown chamber to form a chamber environment with a small amount of water and oxygen. Under the reverse voltage, Al needs to react with water and oxygen to produce alumina. Since alumina is an insulator, the cathode is insulated from the particles, thus achieving the effect of dark spot repair.

[0036] Before step S1, during wafer design, all cathode leads are gathered at the negative input terminal and all anode leads are gathered at the positive input terminal; both cathode and anode leads are designed outside the dicing line; after the wafer packaging process, the die is diced, cutting off both cathode and anode leads.

[0037] Preferred embodiment 1, such as Figure 5 As shown,

[0038] The specific implementation steps are as follows:

[0039] After the organic layer is deposited by vapor deposition, an IZO film is formed by sputtering. (Angle) thickness as cathode;

[0040] Using sputter sputtering approximately With its high penetration ability, Al will penetrate between the IZO film and the microparticles.

[0041] The incoming voltage breaks down the cavity. In an environment with a small amount of water and oxygen, a reverse high voltage is applied to each die (different products use different voltage parameters, generally ranging from 6-12V), which breaks the circuit between the microparticle and the IZO cathode, avoids short circuits, and completes the dark spot repair.

[0042] It is fed into the etching cavity, where the surface Al is removed through the etching process.

[0043] Preferred embodiment 2, such as Figure 6 As shown,

[0044] The specific implementation steps are as follows:

[0045] After the organic layer is deposited by vapor deposition, an IZO film is formed by sputtering. As a cathode;

[0046] Using sputter sputtering approximately With its high penetration ability, Al will penetrate between the IZO film and the microparticles.

[0047] The incoming voltage breaks down the cavity. In an environment with a small amount of water and oxygen, a reverse high voltage is applied to each die to break the circuit between the microparticle and the IZO cathode, thus preventing short circuits and completing the dark spot repair.

[0048] The plasma is introduced into a plasma chamber (if the gas introduced is N2 / Ar, it only has a surface bombardment (etching) effect; if O2 is introduced, it will have an oxidation effect) and then oxidized using the plasma process. Through oxidation, the surface Al is completely oxidized into a dense AlOx layer.

[0049] After voltage breakdown, it is processed into AlOx through plasma. AlOx serves as an encapsulation layer to further protect the OLED device. At the same time, due to its high refractive index, it helps the OLED device to emit light.

[0050] This invention sputters an Al layer onto an IZO cathode. Due to Al's high penetrability, Al penetrates between the IZO and the microparticles. By applying a reverse voltage, the circuit between the microparticles and the IZO cathode is broken, preventing short circuits between the anode and cathode, thus achieving dark spot repair. The anode and cathode leads are distributed and converged to the corresponding electrode input terminals. Only two input pads need to be voltage-applied to complete the simultaneous voltage breakdown process of hundreds of dies in the wafer. The dark spot repair is highly efficient and relatively low in cost.

[0051] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the concept and technical solution of the present invention, or the direct application of the concept and technical solution of the present invention to other occasions without modification, are all within the protection scope of the present invention.

Claims

1. A silicon-based OLED dark spot repair process, characterized in that: The silicon-based OLED dark spot repair process includes the following steps: S1. After the organic layer is deposited on the wafer, the cathode IZO film is completed by sputtering. S2. An Al layer is formed on the cathode IZO film by sputtering. Taking advantage of Al's high penetrability, Al will penetrate into the space between the IZO cathode and the particles. S3. By applying a reverse voltage, the circuit between the microparticles and the IZO cathode is broken, preventing short circuits and completing the dark spot repair. In step S3, a reverse voltage is applied to the voltage breakdown chamber, and a certain amount of water and oxygen are introduced into the voltage breakdown chamber. Under the reverse voltage, Al reacts with water and oxygen to generate insulating alumina, thereby achieving insulation between the cathode and the particles.

2. The silicon-based OLED dark spot repair process as described in claim 1, characterized in that: After step S3, the surface Al is removed by an etching process.

3. The silicon-based OLED dark spot repair process as described in claim 1, characterized in that: After step S3, the surface Al is completely oxidized into a dense AlOx layer through oxidation.

4. The silicon-based OLED dark spot repair process as described in claim 1, characterized in that: Before step S1, during wafer design, all cathode leads are gathered at the negative input terminal, and all anode leads are gathered at the positive input terminal.

5. The silicon-based OLED dark spot repair process as described in claim 3, characterized in that: After step S3, oxidation is performed using the Plasma process.

6. The silicon-based OLED dark spot repair process as described in claim 4, characterized in that: Both the cathode lead and the anode lead are designed to be outside the cutting line.

7. The silicon-based OLED dark spot repair process as described in claim 6, characterized in that: The wafer is diced after the packaging process, cutting off both the cathode and anode leads.

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