A photoresist stripping device to avoid parasitic gate effect and slant mura

Abstract

This invention discloses a photoresist stripping device that avoids parasitic gate effects and murex patterns. The photoresist stripping device is sequentially configured with a drying zone, a stripping zone, a hot water washing zone, an ultracooled water washing zone, and an air drying zone according to the substrate transport direction. A hot air knife for blowing hot air onto the substrate surface is provided at the outlet of the stripping zone. A second spray pipe for spraying hot water onto the substrate surface is provided in the hot water washing zone. A cold air knife for blowing cold air onto the substrate surface is provided at the inlet of the ultracooled water washing zone. A third spray pipe for spraying ultracooled water onto the substrate surface is provided in the ultracooled water washing zone. The photoresist stripping device also includes a vortex tube, a heating device, and a cooling device. This invention avoids the product yield and quality risks caused by parasitic gate effects and murex patterns; it also ensures the versatility of the photoresist stripping equipment, which is beneficial for production line logistics optimization and capacity improvement.

Description

Technical Field

[0001] This invention relates to the field of microelectronics processing technology, specifically to a photoresist stripping device that avoids parasitic gate effects and slant mura. Background Technology

[0002] A thin-film transistor liquid crystal display (TFT-LCD) consists of a backlight and a display screen, which in turn comprises upper and lower polarizers, an array substrate, a color filter, and liquid crystal. The structure and display principle of a TFT-LCD are as follows: Figure 1 As shown in (a), the backlight emits light, which passes through the lower polarizer to reach the array substrate. The TFT devices on the array substrate turn on and generate an electric field, which drives the liquid crystal to deflect. Light then passes through the liquid crystal cell and illuminates the color filter. The color filter array consists of red (R), green (G), and blue (B) subpixels. After light illuminates the subpixels, it emits R, G, and B monochromatic light. This monochromatic light passes through the upper polarizer to reach the human eye, and the superposition of the monochromatic lights ultimately achieves color display. In TFT-LCDs, the array substrate is the most technically challenging and complex component. The structure of the TFT devices on the array substrate is as follows: Figure 1 As shown in (b), a gate electrode, a gate insulating layer, an active layer (a-Si), a pixel electrode (1ITO), a source / drain electrode (SD), a passivation layer (PVX, SiNx material), and a common electrode (2ITO) are sequentially deposited on the glass substrate. The gate, gate insulating layer, a-Si, and SD electrodes form a transistor device. The drain (D electrode) of the device is connected to the pixel electrode (1ITO), and the electrical signal of the device is thus transmitted to the pixel electrode (1ITO). PVX covers the device and provides protection. The common electrode (2ITO) serves as a reference potential, and the potential difference between the pixel electrode (1ITO) and the common electrode (2ITO) drives the liquid crystal deflection. Gate and SD electrodes are typically made of Al. After photolithography, they are patterned using a PAN etching solution (H3PO4, CH3COOH, HNO3), followed by wet stripping to remove the photoresist. Pixel electrodes and common electrodes are made of ITO. After photolithography, they are wet etched using a mixed solution of oxalic acid, HNO3, and H2SO4, followed by wet stripping to remove the photoresist. a-Si and PVX electrodes are dry etched, followed by wet stripping to remove the photoresist.

[0003] like Figure 2As shown, the TFT photoresist wet stripping device consists of a dry zone II, a stripping zone III, a water washing zone IV, and an air drying zone V. Each zone has a transport shaft 1, on which the glass substrate I is transported. The wet stripping is completed by sequentially passing through the aforementioned zones. Below the stripping zone III, a return pipe 2 connects to a chemical solution tank 3, which contains the stripping solution. The chemical solution tank contains a thermocouple 4, which heats the stripping solution to 60°C. The heated stripping solution is powered by a pump and supplied to the stripping zone III through a circulation pipe 5, and then sprayed onto the glass substrate by the first spray pipe 6. The stripping solution is an organic solvent composed of amines, which can dissolve the photoresist, thus achieving photoresist stripping. The glass substrate is transported to the right, passing through an air curtain composed of an upper air knife 7 and a lower air knife 8. The air curtain acts as a scraper, reducing the amount of stripping solution remaining on the substrate. When the glass substrate reaches the water washing zone IV, water from the second spray pipe 9 is sprayed out through nozzles to remove any remaining stripping solution from the substrate. Finally, the glass substrate is transferred to drying zone V for drying.

[0004] Photoresist stripping equipment is a general-purpose device; only a small number of stripping units are needed to strip photoresist from various film layers, which helps control costs, optimize production line logistics, and increase production capacity. The stripping solution is alkaline. During the stripping of photoresist for Gate and SD substrates, a small amount of Al from the electrodes dissolves in the stripping solution and exists in ionic form. During the 2ITO photoresist stripping process for TFTs, residual stripping solution containing Al ions is carried along with the glass substrate to the washing area. The residual stripping solution contains amines, which react with water to release OH-. - OH - It combines with Al ions to form small Al(OH)3 particles. These Al(OH)3 particles decompose into more stable Al2O3 particles. When these particles adhere to the PVX layer above the TFT channel, they act as a parasitic gate. Figure 3 As shown, Al2O3 particles, PVX, and SD electrodes form a top-gate TFT device. At the PVX / Si interface, the parasitic gate effect induces additional electrons, ultimately resulting in a high leakage current (Ioff) for the TFT device. Furthermore, the higher the Al ion concentration in the stripping solution, the more Al2O3 particles are generated, and the greater the TFT leakage current (Ioff). An abnormal increase in the TFT leakage current (Ioff) can cause crosstalk, image retention, and other defects in the TFT-LCD, ultimately leading to product scrap. To avoid the parasitic gate effect, it is necessary to strictly distinguish between Gate, SD stripping, and 2ITO stripping equipment. However, this requires the purchase of additional stripping equipment and is detrimental to production line logistics optimization, leading to a decrease in production cycle time and ultimately resulting in capacity loss. For the Gate, SD, and 2ITO stripping processes, there is both a need for mixed fabrication and a need for separate fabrication; currently, there is no effective solution to this contradiction.

[0005] Stripping solutions are expensive, and to control production costs, TFT production lines strive to extend their lifespan. The longer the stripping solution is used, the more wafers are produced, and the more photoresist is dissolved in the solution, meaning the photoresist concentration in the stripping solution is also higher. Figure 2 As shown, a photoresist concentration monitoring sensor 10 is installed on the circulation pipeline 5 that supplies the stripping solution to the stripping zone, and a photoresist concentration threshold is set. When the photoresist concentration in the stripping solution reaches the threshold, the stripping solution in the chemical tank is discharged through pipeline 11, while pipeline 12 replenishes the chemical tank with new stripping solution. After the above two steps, the photoresist concentration in the stripping solution is lower than the threshold, and pipelines 11 and 12 are closed. This cycle continues, and the photoresist concentration in the stripping solution is controlled, extending the service life of the stripping solution. This control method ensures that the photoresist concentration in the stripping solution is close to the threshold, but its concentration is still relatively high. When the glass substrate is transferred from the stripping zone to the washing zone, the air curtain composed of the upper air knife 7 and the lower air knife 8 reduces the residue of the stripping solution on the substrate; however, the high-speed CDA blown by the air knife has a cooling effect, which causes some of the photoresist dissolved in the stripping solution to precipitate. The precipitated photoresist is carried to the washing zone with the substrate, and the water cannot effectively rinse it, ultimately forming photoresist residue. When the substrate is transferred to the washing zone, there will still be residual stripping solution on the substrate. The stripping solution is an organic, oily solution, meaning it is hydrophobic in contact with water. The water sprayed in the rinsing zone cannot completely remove the residual stripping solution. In addition, the water also cools down during the rinsing process of the residual stripping solution, which causes the photoresist in the stripping solution to precipitate and form residue.

[0006] Stripping fluid or photoresist residue is most noticeable in the SD stripping process of TFTs. For example... Figure 4 As shown, the TFT manufacturing process first performs the ITO process (film deposition → photolithography → etching → photoresist stripping → ITO annealing), and then performs the SD process (film deposition → photolithography → etching → photoresist stripping). The surface roughness (RMS) and contact angle of the ITO film before and after annealing are shown in the figure. Figure 5 As shown, after ITO annealing, the surface roughness of the film increases (0.725nm→1.323nm) and the contact angle increases (59°→73°), meaning that the hydrophobicity of ITO increases after annealing. In the SD photoresist stripping process, large areas of annealed ITO come into direct contact with the stripping solution. Because the surface roughness of annealed ITO increases, it easily accommodates residual photoresist and stripping solution. Secondly, the increased hydrophobicity of annealed ITO causes residual photoresist or stripping solution to easily adhere to the ITO and be difficult to rinse off.

[0007] like Figure 6 As shown, during the wet peeling and washing process, to ensure efficient liquid flow, the transmission shafts within the chamber are arranged at an angle θ to the horizontal direction, and the glass substrate also has an angle θ to the horizontal direction. Figure 6(a) Residual photoresist or stripping solution on the inclined substrate is subjected to gravity and substrate support force. Gravity is decomposed into gravitational components A and B along the directions parallel and perpendicular to the substrate. Gravity component B balances the substrate support force, while the residue slides downward along the inclined substrate under the action of gravitational component A. Figure 6 In (b), the residue is transported along the substrate and subjected to frictional force in the transport direction. Under the combined action of friction and gravitational component A, the residue moves along the diagonal pattern of the combined motion. The residue forms a diagonal pattern on the blocky 1ITO. When the TFT is finally fabricated, the electric field between 1ITO and 2ITO becomes abnormal along the diagonal pattern, leading to abnormal liquid crystal deflection and ultimately resulting in a diagonal pattern of brightness difference on the display (referred to as a "mura" in the TFT industry). To avoid diagonal pattern mura, the lifespan of the stripping solution can be shortened, and the stripping solution can be replaced promptly. The concentration of photoresist in the stripping solution can also be reduced, thus reducing photoresist precipitation and avoiding diagonal pattern mura. However, frequent replacement of the stripping solution increases production costs. There is both an increasing and decreasing demand for the lifespan of the stripping solution, and currently there is no effective solution to this contradiction. Summary of the Invention

[0008] In view of this, the purpose of the present invention is to provide a photoresist stripping device that avoids parasitic gate effect and slant mura, thereby avoiding product yield and quality risks caused by parasitic gate effect and slant mura.

[0009] To achieve the above objectives, the present invention provides the following technical solution:

[0010] A photoresist stripping device that avoids parasitic gate effect and slant mura, wherein the photoresist stripping device is provided with a drying zone, a stripping zone, a hot water washing zone, an ultra-cold water washing zone and an air drying zone in sequence according to the transport direction of the substrate;

[0011] The stripping zone is provided with a first spray pipe for spraying stripping liquid onto the substrate surface. Below the stripping zone is a medicine tank for storing the stripping liquid. The medicine tank is equipped with a thermocouple. The stripping zone is connected to the medicine tank through a return pipe. The medicine tank is connected to the first spray pipe through a circulation pipeline. An ion adsorption device is installed on the circulation pipeline.

[0012] The outlet of the stripping zone is provided with a hot air knife for blowing hot air onto the substrate surface, and the hot water washing zone is provided with a second spray pipe for spraying hot water onto the substrate surface.

[0013] The entrance to the supercooled water washing zone is equipped with a cold air knife for blowing cold air onto the substrate surface, and the supercooled water washing zone is equipped with a third spray pipe for spraying supercooled water onto the substrate surface.

[0014] The photoresist stripping device further includes a vortex tube, a heating device, and a cooling device; the hot air branch of the vortex tube is connected to the hot air knife and the heating device respectively, the heating device is also connected to a room temperature water pipe, and the heated water pipe of the heating device is connected to a second spray pipe; the cold air branch of the vortex tube is connected to the cold air knife and the cooling device respectively, the cooling device is also connected to a room temperature water pipe, and the supercooled water pipe of the cooling device is connected to a third spray pipe.

[0015] As a preferred technical solution, the ion adsorption device is filled with MXene layered material or adsorption resin.

[0016] As a preferred technical solution, the second spray pipe is arranged in sequence with Venturi nozzles with gradually decreasing cross-sectional area, Laval nozzles with decreasing cross-sectional area and then increasing cross-sectional area, and conventional nozzles, according to the transmission direction of the substrate.

[0017] As a preferred technical solution, the outer shell of the heating device is a cone shape with a smaller upper part and a larger lower part. The heating device is equipped with a baffle to make the water flow form a U-shaped path. The hot air branch of the vortex tube is connected to the bottom of the heating device, and the room temperature water pipe is connected to the top of the heating device. The diameter of the heating water pipe of the heating device is 0.5 to 0.7 times the diameter of the room temperature water pipe, and the heating water temperature is controlled at 40 to 60°C.

[0018] As a preferred technical solution, an eddy current heating device is also installed on the heating water pipe. The outside of the eddy current heating device is wound with a spiral coil. The inside of the eddy current heating device is a hollow tube. Inside the hollow tube, there are curved metal plates that are arranged on the inner wall of the pipe along the fluid flow direction. The metal plates are evenly spaced along the circumference of the hollow tube.

[0019] As a preferred technical solution, the outer shell of the cooling device is a cone shape with a smaller upper part and a larger lower part. The cooling device is equipped with a baffle to make the water flow form a U-shaped path. The cooling air branch pipe of the vortex tube is connected to the bottom of the cooling device, and the ambient temperature water pipe is connected to the top of the cooling device. The diameter of the subcooled water pipe of the cooling device is 0.5 to 0.7 times the diameter of the ambient temperature water pipe, and the subcooled water temperature is controlled at 5 to 16°C.

[0020] The beneficial effects of this invention are as follows:

[0021] This invention designs an ion adsorption circuit, a hot air knife stripping zone, and a special water washing zone: the ion adsorption circuit can adsorb Al ions in the stripping solution, suppressing the parasitic gate effect at its source. The special water washing zone includes a hot water washing zone and an ultra-cold water washing zone. The substrate is first washed with hot water and then rinsed with ultra-cold water. The rapid temperature change causes stress in the PVX film layer, which causes Al2O3 particles to detach, further suppressing the parasitic gate effect and preventing abnormal increases in TFT leakage current.

[0022] The hot air knife in the stripping zone can reduce stripping fluid residue and prevent photoresist precipitation from the stripping fluid. In the subsequent hot water washing zone, hot water can effectively rinse away the residual oily stripping fluid and photoresist, avoiding the risk of slant pattern mura.

[0023] This invention avoids the risks to product yield and quality caused by parasitic gate effect and murky texture; it also ensures the versatility of photoresist stripping equipment, which is beneficial for production line logistics optimization and capacity improvement; at the same time, the device can also extend the service life of the stripping solution and reduce production costs. Attached Figure Description

[0024] To make the objectives, technical solutions, and beneficial effects of this invention clearer, the following figures are provided for illustration:

[0025] Figure 1 This is a schematic diagram of a TFT-LCD structure and TFT devices;

[0026] Figure 2 A schematic diagram of an existing conventional photoresist wet stripping device;

[0027] Figure 3 A schematic diagram illustrating the principle of the parasitic gate effect and the abnormally high leakage current Ioff of the TFT.

[0028] Figure 4 This is a schematic diagram of the 1ITO and SD photoresist stripping process for TFTs.

[0029] Figure 5 This is a schematic diagram showing the changes in surface roughness and contact angle before and after ITO annealing.

[0030] Figure 6 This is a schematic diagram of the TFT-LCD twill pattern formation process.

[0031] Figure 7 This is a schematic diagram of the photoresist stripping device for avoiding parasitic gate effect and slanted Mura according to the present invention;

[0032] Figure 8 This is a schematic diagram illustrating the structure and operating principle of the heating device;

[0033] Figure 9 This is a schematic diagram illustrating the structure and working principle of an eddy current heating device.

[0034] Figure 10 This is a schematic diagram illustrating the structure and working principle of the cooling device. Detailed Implementation

[0035] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can better understand and implement the present invention. However, the embodiments described are not intended to limit the present invention.

[0036] like Figure 7 The present invention discloses a photoresist stripping device that avoids parasitic gate effect and slant mura. The photoresist stripping device is provided with a drying zone II, a stripping zone III, a hot water washing zone VI, an ultracooled water washing zone VII, and an air drying zone V in sequence according to the transport direction of the substrate.

[0037] The stripping zone III is equipped with a first spray pipe 6 for spraying stripping liquid onto the surface of substrate 1. Below the stripping zone III is a reagent tank 3 for storing the stripping liquid, and a thermocouple 4 is installed inside the reagent tank 3. The stripping zone III is connected to the reagent tank 3 via a return pipe 2, and the reagent tank 3 is connected to the first spray pipe 6 via a circulation pipe 5. An ion adsorption device 13 is installed on the circulation pipe 5. The ion adsorption device 13 is filled with MXene layered material or adsorption resin. During the mixed stripping of Gate, SD, and 2ITO photoresist, Al in the electrodes dissolves in the stripping liquid to form Al ions. The ion adsorption device 13 adsorbs the Al ions in the stripping liquid, reducing the Al ion concentration in the stripping liquid. Consequently, the number of Al2O3 particles generated in the water washing zone decreases, and the parasitic gate effect is suppressed.

[0038] The outlet of the stripping zone III is provided with a hot air knife 14 for blowing hot air onto the substrate surface, and the hot water washing zone VI is provided with a second spray pipe 9 for spraying hot water onto the substrate surface. The inlet of the subcooled water washing zone VII is provided with a cold air knife 15 for blowing cold air onto the substrate surface, and the subcooled water washing zone VII is provided with a third spray pipe 16 for spraying subcooled water onto the substrate surface.

[0039] The photoresist stripping device further includes a vortex tube 17, a heating device 18, and a cooling device 19; the hot air branch pipe 20 of the vortex tube 17 is connected to the hot air knife 14 and the heating device 18 respectively, the heating device 18 is also connected to a room temperature water pipe 21, and the heating water pipe 22 of the heating device 18 is connected to the second spray pipe 9; the cold air branch pipe 23 of the vortex tube 17 is connected to the cold air knife 15 and the cooling device 19 respectively, the cooling device 19 is also connected to a room temperature water pipe 24, and the supercooled water pipe 25 of the cooling device 19 is connected to the third spray pipe 16.

[0040] like Figure 8As shown, the outer shell of the heating device 18 is a cone shape, smaller at the top and larger at the bottom. A baffle 29 is installed inside the heating device 18 to create a U-shaped path for water flow. The hot air branch pipe 20 of the vortex tube 17 is connected to the bottom of the heating device 18, and the ambient temperature water pipe 21 is connected to the top of the heating device 18. The diameter of the heating water pipe in the heating device 18 is 0.5 to 0.7 times the diameter of the ambient temperature water pipe, and the heating water temperature is controlled between 40 and 60°C. Ambient temperature water enters the heating device 18 through the ambient temperature water pipe 21 and is heated by the hot air separated by the vortex tube 17 to form hot water, which is then supplied to the hot water washing area through the heating water pipe 22.

[0041] An eddy current heating device 30 is also installed on the heating water pipe to further heat the water. Figure 9 As shown, the eddy current heating device 30 has a helical coil 31 wound around its exterior. The interior of the eddy current heating device 30 is a hollow tube, inside which are curved metal plates 32 arranged along the fluid flow direction on the inner wall of the tube. The metal plates 32 are evenly spaced along the circumference of the hollow tube. When a varying current is applied to the helical coil 31, the metal plates 32 heat the water under the action of the eddy current. Figure 9 As shown in (d), due to the special shape of the metal sheet 32, when water flows through the metal sheet, due to the Karman vortex street effect, the water will periodically impact the inside of the pipe, converting kinetic energy into internal energy and further increasing the water temperature.

[0042] like Figure 10 As shown, the outer shell of the cooling device 19 is a cone shape, smaller at the top and larger at the bottom. A baffle 33 is installed inside the cooling device 19 to create a U-shaped path for water flow. The cold air branch pipe 23 of the vortex tube 17 is connected to the bottom of the cooling device 19, and the ambient temperature water pipe 24 is connected to the top of the cooling device 19. The diameter of the subcooled water pipe in the cooling device 19 is 0.5 to 0.7 times that of the ambient temperature water pipe, and the subcooled water temperature is controlled between 5 and 16°C. Ambient temperature water enters the cooling device 19 through the ambient temperature water pipe 24 and is cooled by the cold gas separated by the vortex tube 17 to form subcooled water, which is then supplied to the subcooled water washing zone through the subcooled water pipe 25.

[0043] The process for removing Al2O3 particles and further suppressing the parasitic gate effect is as follows: The substrate is first transported to the hot water washing section VI for hot water washing. On the second spray pipe 9, Venturi nozzles 26 with gradually decreasing cross-sectional areas, Laval nozzles 27 with decreasing and then increasing cross-sectional areas, and conventional nozzles 28 are arranged sequentially according to the substrate transport direction. Due to the Venturi effect, the Venturi nozzles 26 with gradually decreasing cross-sectional areas have increased flow rates, which is beneficial for removing Al2O3 particles. The Laval nozzles 27 with decreasing and then increasing cross-sectional areas, under the Laval effect, both increase the spray flow rate and expand the spray range, which is also beneficial for removing Al2O3 particles. After hot water cleaning, the substrate is immediately transferred to the ultracooled water washing zone VII. The cold air knife 15 blows out cold gas, causing the substrate temperature to drop rapidly. The PVX film in the TFT generates stress due to the sudden temperature drop, which reduces the adhesion between the Al2O3 particles and the PVX layer. Ultracooled water is sprayed out in the ultracooled water washing zone VII and sprayed onto the substrate, which maintains the stress change of the PVX film. The residual Al2O3 particles are detached from the adhered PVX film under the water spray, and the parasitic gate effect is finally suppressed.

[0044] The process for suppressing stripper fluid and photoresist residue is as follows: The substrate is transferred from stripping zone III to hot water washing zone VI. Hot air is blown out by hot air knife 14, forming an air curtain to reduce the amount of stripper fluid carried out by the substrate, thus reducing the amount of stripper fluid remaining on the substrate. Since the hot air knife 14 blows out hot air, it does not have a cooling effect, so the stripper fluid remaining on the substrate will not precipitate into photoresist. When the substrate is transferred to hot water washing zone VI, hot water is more effective than room temperature water in cleaning residual oily stripper fluid, improving the stripper fluid removal effect and rinsing away the residual stripper fluid. Since hot water is used to rinse the glass substrate, there is no cooling effect, and no photoresist will precipitate during the water rinsing process, thus avoiding the problem of photoresist residue. After hot water rinsing, the substrate is transferred to ultracooled water washing zone VII for further cleaning.

[0045] The above-described embodiments are merely preferred embodiments provided to fully illustrate the present invention, and the scope of protection of the present invention is not limited thereto. Equivalent substitutions or modifications made by those skilled in the art based on the present invention are all within the scope of protection of the present invention. The scope of protection of the present invention is defined by the claims.

Claims

1. A photoresist stripping device that avoids parasitic gate effect and ripple mura, characterized in that: The photoresist stripping device is provided with a drying zone, a stripping zone, a hot water washing zone, an ultra-cold water washing zone and an air drying zone in sequence according to the substrate transport direction. The stripping zone is provided with a first spray pipe for spraying stripping liquid onto the substrate surface. Below the stripping zone is a medicine tank for storing the stripping liquid. The medicine tank is equipped with a thermocouple. The stripping zone is connected to the medicine tank through a return pipe. The medicine tank is connected to the first spray pipe through a circulation pipeline. An ion adsorption device is installed on the circulation pipeline. The outlet of the stripping zone is provided with a hot air knife for blowing hot air onto the substrate surface, and the hot water washing zone is provided with a second spray pipe for spraying hot water onto the substrate surface. The entrance to the supercooled water washing zone is equipped with a cold air knife for blowing cold air onto the substrate surface, and the supercooled water washing zone is equipped with a third spray pipe for spraying supercooled water onto the substrate surface. The photoresist stripping device further includes a vortex tube, a heating device, and a cooling device; the hot air branch of the vortex tube is connected to the hot air knife and the heating device respectively, the heating device is also connected to a room temperature water pipe, and the heated water pipe of the heating device is connected to a second spray pipe; the cold air branch of the vortex tube is connected to the cold air knife and the cooling device respectively, the cooling device is also connected to a room temperature water pipe, and the supercooled water pipe of the cooling device is connected to a third spray pipe.

2. The photoresist stripping device for avoiding parasitic gate effect and ripple mura according to claim 1, characterized in that: The ion adsorption device is filled with MXene layered material or adsorption resin.

3. The photoresist stripping device for avoiding parasitic gate effect and ripple mura according to claim 1, characterized in that: The second spray pipe is arranged in sequence with Venturi nozzles with gradually decreasing cross-sectional area, Laval nozzles with decreasing cross-sectional area and then increasing cross-sectional area, and conventional nozzles, according to the transmission direction of the substrate.

4. The photoresist stripping device for avoiding parasitic gate effect and ripple mura according to claim 1, characterized in that: The outer shell of the heating device is a cone shape that is smaller at the top and larger at the bottom. The heating device is equipped with a baffle to make the water flow form a U-shaped path. The hot air branch of the vortex tube is connected to the bottom of the heating device, and the room temperature water pipe is connected to the top of the heating device. The diameter of the heating water pipe of the heating device is 0.5 to 0.7 times the diameter of the room temperature water pipe, and the heating water temperature is controlled at 40 to 60°C.

5. The photoresist stripping apparatus for avoiding parasitic gate effect and ripple mura according to claim 1, characterized in that: An eddy current heating device is also installed on the heating water pipe. The outside of the eddy current heating device is wound with a spiral coil. The inside of the eddy current heating device is a hollow tube. Inside the hollow tube, there are curved metal plates that are set on the inner wall of the pipe along the fluid flow direction. The metal plates are evenly spaced along the circumference of the hollow tube.

6. The photoresist stripping apparatus for avoiding parasitic gate effects and ripple mura according to claim 1, characterized in that: The outer shell of the cooling device is a cone shape that is smaller at the top and larger at the bottom. The cooling device is equipped with a baffle to make the water flow form a U-shaped path. The cooling air branch pipe of the vortex tube is connected to the bottom of the cooling device, and the ambient temperature water pipe is connected to the top of the cooling device. The diameter of the subcooled water pipe of the cooling device is 0.5 to 0.7 times that of the ambient temperature water pipe, and the subcooled water temperature is controlled at 5 to 16°C.

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