Method for manufacturing a semiconductor device and semiconductor device
By setting sacrificial layers of different thicknesses on the substrate of the thin-film bulk acoustic resonator, the manufacturing process is simplified, solving the problems of complex processes and high costs in the prior art, and realizing low-cost manufacturing of thin-film bulk acoustic resonators with different frequencies.
CN117134727BActive Publication Date: 2026-07-03SUZHOU HUNTERSUN ELECTRONICS CO LTD
Patent Information
- Application Number
- CN202311108014.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-30
- Publication Date
- 2026-07-03
- Estimated Expiration
- 2043-08-30
AI Technical Summary
Technical Problem
The manufacturing process of existing thin-film bulk acoustic resonator filters is complex and costly, mainly because it requires a cumbersome lift-off process to form a mass load layer in order to achieve parallel and series resonators with different frequencies.
Method used
By setting first and second sacrificial layers of different thicknesses on the substrate and forming upper electrodes of different thicknesses through a single planarization operation, the manufacturing process is simplified and the lift-off process is avoided.
Benefits of technology
This technology enables the simple and low-cost fabrication of thin-film bulk acoustic resonators with different frequencies on a single substrate, reducing process complexity and cost.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN117134727B_ABST
Abstract
This invention provides a method for manufacturing a semiconductor device, comprising: providing a substrate; forming a groove and a first sacrificial layer filling it in a first region on the upper surface of the substrate; forming a second sacrificial layer in a second region on the upper surface of the substrate, the thickness of the second sacrificial layer being less than the thickness of an upper electrode material to be deposited; depositing and patterning a lower electrode layer material on the substrate to form a first lower electrode and a second lower electrode; depositing a piezoelectric layer covering the two lower electrodes (a first piezoelectric layer stacked on the first lower electrode and a second piezoelectric layer stacked on the second lower electrode); depositing and planarizing an upper electrode layer material on the piezoelectric layers to form a first upper electrode stacked on the first piezoelectric layer and a second upper electrode stacked on the second piezoelectric layer with a thickness less than that of the first upper electrode; and removing the sacrificial layer to form a cavity. This invention also provides a semiconductor device. This invention can form thin-film bulk acoustic wave resonators with different frequencies by performing only one planarization step.
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Citation Information
Patent Citations
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