High-brightness LED module and preparation method thereof, LED chip and preparation method thereof

Abstract

The application provides a high-brightness LED module, comprising: a plurality of LED pixel units arranged in an array on a CMOS driving circuit substrate; wherein a first surface of an N-type epitaxial layer is formed with a light-emitting roughening structure; a metal air bridge structure is connected between the plurality of N-type epitaxial layers and extends on the sidewall and surface of a cathode column; a photoresist structure is arranged in an array with a plurality of fluorescent structure units in the photoresist structure; each fluorescent structure unit comprises: a mirror layer, a fluorescent structure and a lens structure; the mirror layer is formed on the sidewall of the fluorescent structure; the lens structure is formed at the top end of the corresponding fluorescent structure; wherein the fluorescent structure in the fluorescent structure unit is bonded to the light-emitting roughening structure in the LED pixel unit. The technical scheme solves the problem of improving the light gathering degree and the chip light-emitting brightness, and simultaneously improving the resolution of the LED module.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a high-brightness LED module and its fabrication method, and an LED chip and its fabrication method. Background Technology

[0002] With the development of automotive electronics and intelligence, automotive lighting systems are also constantly being upgraded. From traditional simple lighting functions, they have evolved to various technological solutions such as adaptive headlights, matrix headlights, and laser headlights, achieving more efficient, safer, and more personalized lighting effects. Intelligent headlights not only improve the visibility and safety of drivers and pedestrians, but also interact and communicate with the surrounding environment to enhance driving efficiency. They can even create an atmosphere and a sense of luxury through personalized scenarios. The pixelation, intelligence, and personalization of intelligent headlights bring safer, smarter, and richer application scenarios, continuously empowering safer driving and a more enjoyable automotive experience.

[0003] Matrix LED headlights can accurately illuminate the road ahead in various conditions, and each LED element can independently adjust its brightness and switch on and off. When meeting oncoming traffic or pedestrians at night, the matrix LED headlights will automatically turn off part of the light, preventing other drivers from being blinded and causing danger, thus improving nighttime driving safety and driving experience.

[0004] Therefore, developing a high-resolution, high-brightness matrix LED automotive lighting module manufacturing method and structure has become a key technical issue that urgently needs to be addressed by those skilled in the art. Summary of the Invention

[0005] This invention provides a high-brightness LED module and its preparation method, as well as an LED chip and its preparation method, to solve the problems of improving light concentration and chip output brightness, increasing the resolution of the LED module, and simultaneously improving process efficiency.

[0006] According to a first aspect of the present invention, a high-brightness LED module is provided, comprising:

[0007] A plurality of LED pixel units arranged in an array; each LED pixel unit includes: a transparent conductive layer, a P-type epitaxial layer, a light-emitting layer and an N-type epitaxial layer stacked sequentially in a first direction; wherein, the first surface of the N-type epitaxial layer has a light-emitting roughening structure; the first surface of the N-type epitaxial layer represents the side of the N-type epitaxial layer that is away from the light-emitting layer.

[0008] One or more cathode columns;

[0009] A metal air bridge structure; the metal air bridge structure is connected between several of the N-type epitaxial layers and extends on the sidewalls and surfaces of the cathode column;

[0010] CMOS driver circuit substrate;

[0011] Several P-pad structures are formed between a portion of the transparent conductive layer and the CMOS driving circuit substrate.

[0012] A plurality of N-pad structures; formed on the metal air bridge structure on the surface of a portion of the cathode pillars and connected to the CMOS driving circuit substrate; wherein the cathode pillars, the metal air bridge structure and the plurality of N-pad structures form a common cathode structure;

[0013] Optical resist structure;

[0014] A plurality of fluorescent structural units are arranged in an array; each fluorescent structural unit includes: a mirror layer, a fluorescent structure, and a lens structure; wherein the plurality of fluorescent structures are arranged in an array within the photoresist structure and penetrate the photoresist structure; in each fluorescent structural unit, the mirror layer is formed on the sidewall of the fluorescent structure; the lens structure is formed at the top of the corresponding fluorescent structure;

[0015] The fluorescent structure in the fluorescent structural unit is bonded to the light-emitting roughened structure in the LED pixel unit; and the fluorescent structural unit is formed at the top of at least a portion of the LED pixel units.

[0016] Optionally, the material of the photoresist structure is black glue.

[0017] Optionally, the lens structure is made of silicon dioxide or resin.

[0018] Optionally, the fluorescent structure is made of quantum dots or phosphors.

[0019] Optionally, the fluorescent structure is a glass fluorescent structure or a ceramic fluorescent structure.

[0020] According to a second aspect of the present invention, a method for manufacturing a high-brightness LED module is provided, comprising:

[0021] An LED module is provided; the LED module includes: LED pixel units, a metal air bridge structure, a CMOS driving circuit substrate, a plurality of P-pad structures, a plurality of N-pad structures, and one or more cathode pillars; wherein, the LED pixel unit includes: a transparent conductive layer, a P-type epitaxial layer, a light-emitting layer, and an N-type epitaxial layer; wherein, the transparent conductive layer, the P-type epitaxial layer, the light-emitting layer, and the N-type epitaxial layer are stacked sequentially along a first direction, and a plurality of LED pixel units are arranged in an array; wherein, the first surface of the N-type epitaxial layer has a light-emitting roughening structure. The first surface of the N-type epitaxial layer represents the side of the N-type epitaxial layer that faces away from the light-emitting layer; the metal air bridge structure connects the plurality of N-type epitaxial layers and extends on the sidewall and surface of the cathode pillar; the plurality of P-pad structures are formed between the transparent conductive layer and the CMOS driving circuit substrate; the plurality of N-pad structures are formed on the metal air bridge structure on the surface of a portion of the cathode pillar and are connected to the CMOS driving circuit substrate; wherein, the cathode pillar, the metal air bridge structure, and the plurality of N-pad structures form a common cathode structure;

[0022] Provide a fluorescent sheet;

[0023] A plurality of lens structures are formed; the plurality of lens structures are arranged in an array on the first surface of the fluorescent sheet; the second surface of the fluorescent sheet is bonded to the light-emitting roughening structure; the first surface and the second surface are arranged opposite to each other;

[0024] The phosphor sheet is etched to form an independent phosphor structure and lens structure at the top of each corresponding LED pixel unit;

[0025] A plurality of mirror layers are formed; the mirror layers are formed on the sidewalls of the corresponding fluorescent structures; the mirror layers, the fluorescent structures, and the lens structures form a fluorescent structure unit, and a plurality of the fluorescent structure units are arranged in an array;

[0026] A photoresist structure is formed; the photoresist structure is formed on the light-emitting roughened structure and fills the gaps between the arrayed fluorescent structural units;

[0027] The array arrangement of the plurality of lens structures is adapted to the array arrangement of the LED pixel units in the LED module, such that when the phosphor sheet is bonded to the LED module, at least some of the LED pixel units have the lens structure correspondingly formed at their top ends.

[0028] Alternatively, the method used to form several lens structures may be etching or imprinting.

[0029] According to a third aspect of the present invention, an LED chip is provided, comprising the high-brightness LED module described in any of the first aspects of the present invention.

[0030] According to a fourth aspect of the present invention, a method for manufacturing an LED chip is provided, including the method for manufacturing a high-brightness LED module as described in any of the second aspects of the present invention.

[0031] The present invention provides a high-brightness LED module in which fluorescent structural units are formed on the light-emitting surfaces of at least some LED pixel units; wherein, a plurality of fluorescent structural units are isolated from each other by photoresist structures; since photoresist structures are filled between the fluorescent structural units, the phenomenon of optical crosstalk between the light beams emitted from the LED pixel units is avoided, thereby improving the resolution of the LED module. Each fluorescent structural unit includes a mirror layer, a fluorescent structure, and a lens structure. The fluorescent structure in the fluorescent structural unit is bonded to the light-emitting roughening structure in the LED pixel unit. The mirror layer is formed on the sidewall of the fluorescent structure. The lens structure is formed at the top of the corresponding fluorescent structure. The light-emitting surface of the LED pixel unit has a light-emitting roughening structure, which breaks the total internal reflection phenomenon of the light emitted from the LED pixel unit, improves the external quantum light extraction efficiency, and increases the chip's light-emitting brightness. The fluorescent structure is used to perform color conversion on the light beam emitted from the LED pixel unit. The mirror layer is used to reflect the light emitted from the LED pixel unit, preventing light loss from the periphery of the fluorescent structure. Therefore, more light beams can be converted by the fluorescent structure and emitted from the lens structure, thus improving the light concentration and chip's light-emitting brightness. The lens structure can form a focusing effect on the light converted by the fluorescent structure, making the light emission angle smaller, thus further improving the chip's light-emitting brightness. As can be seen, the technical solution provided by this invention improves the light concentration and chip brightness while also increasing the resolution of the LED module.

[0032] Furthermore, this invention also provides a method for fabricating a high-brightness LED module. The formed photoresist structure avoids optical crosstalk between light beams emitted from LED pixel units, thus improving the resolution of the LED module. The formed light-emission coarsening structure disrupts the total internal reflection phenomenon of light emitted from the LED pixel units at the light-emission surface, improving the external quantum light extraction efficiency and increasing the chip's brightness. The formed reflective mirror layer reflects the light emitted from the LED pixel units, preventing light loss from the periphery of the fluorescent structure. Consequently, more light beams can be converted by the fluorescent structure and emitted from the lens structure, thus improving light concentration and chip brightness. The formed lens structure can focus the light converted by the fluorescent structure, resulting in a smaller light emission angle, further improving the chip's brightness. Therefore, the method for fabricating a high-brightness LED module provided by this invention improves both light concentration and chip brightness while also increasing the resolution of the LED module. Furthermore, the method for fabricating a high-brightness LED module provided by this invention combines the fluorescent structure and the LED module through bonding to form a high-brightness LED module. This allows subsequent process steps to be performed after the lens structure, fluorescent sheet, and LED module are fabricated separately. Therefore, the LED module can be fabricated simultaneously, which helps to improve process efficiency and save process time. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic diagram of the device structure of a high-brightness LED module according to an embodiment of the present invention;

[0035] Figure 2 This is a schematic diagram of the device structure at different process stages prepared according to a method for preparing a high-brightness LED module, provided in an embodiment of the present invention. Figure 1 ;

[0036] Figure 3 This is a schematic diagram of the device structure at different process stages prepared according to a method for preparing a high-brightness LED module, provided in an embodiment of the present invention. Figure 2 ;

[0037] Figure 4 This is a schematic diagram of the device structure at different process stages prepared according to a method for preparing a high-brightness LED module, provided in an embodiment of the present invention. Figure 3 ;

[0038] Figure 5 This is a schematic diagram of the device structure at different process stages prepared according to a method for preparing a high-brightness LED module, provided in an embodiment of the present invention. Figure 4 ;

[0039] Figure 6 This is a schematic flowchart of a method for preparing a high-brightness LED module according to an embodiment of the present invention;

[0040] Explanation of reference numerals in the attached figures:

[0041] 101-CMOS driver circuit board;

[0042] 102-N type epitaxial layer;

[0043] 103 - Emissive layer;

[0044] 104-P type epitaxial layer;

[0045] 105 - Transparent conductive layer;

[0046] 106-N-pad;

[0047] 107-P-pad;

[0048] 108 - Metal air bridge structure;

[0049] 109-Photoresist structure;

[0050] 110-fluorescent structure;

[0051] 111 - Mirror layer;

[0052] 112 - Lens structure;

[0053] 113-Idemitsu roughened structure;

[0054] 114-Fluorescent film. Detailed Implementation

[0055] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0056] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0057] Matrix LED headlights can accurately illuminate the road ahead in various conditions. Each LED element in a matrix LED headlight can independently adjust its brightness and switch on / off. When meeting oncoming traffic or pedestrians at night, the matrix LED headlights will automatically dim part of the light, preventing other drivers from being blinded and thus improving nighttime driving safety and the driving experience.

[0058] Therefore, it is necessary to develop a high-resolution, high-brightness matrix LED automotive lamp module manufacturing method and structure.

[0059] In view of this, the inventors of this application, through repeated experiments and demonstrations, proposed: a high-brightness LED module, wherein fluorescent structural units are formed on the light-emitting surfaces of at least a portion of the LED pixel units; wherein a plurality of the fluorescent structural units are isolated from each other by the photoresist structure; wherein each fluorescent structural unit includes: a mirror layer, a fluorescent structure, and a lens structure; the fluorescent structure in the fluorescent structural unit is correspondingly bonded to the light-emitting roughened structure in the LED pixel unit; the mirror layer is formed on the sidewall of the fluorescent structure; and the lens structure is formed at the top of the corresponding fluorescent structure.

[0060] By filling the spaces between the fluorescent structural units with photoresist structures, crosstalk between the light beams emitted from the LED pixel units is avoided, thus improving the resolution of the LED module. The light-emitting surface of the LED pixel unit is designed with a light-emitting roughening structure, which disrupts the total internal reflection of the light emitted from the LED pixel unit, improving external quantum light extraction efficiency and increasing chip brightness.

[0061] The fluorescent structure is used to convert the light beam emitted from the LED pixel unit into colors; the reflective layer is used to reflect the light emitted from the LED pixel unit, preventing light loss due to light emanating from around the fluorescent structure. Therefore, more light beams can be converted by the fluorescent structure and emitted from the lens structure, thus improving light concentration and chip brightness. The lens structure can focus the light converted by the fluorescent structure, making the light emission angle smaller, thereby further improving the chip brightness.

[0062] As can be seen, the technical solution provided by this invention improves the light concentration and chip brightness while also increasing the resolution of the LED module.

[0063] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0064] Please refer to Figures 1-6 According to one embodiment of the present invention, such as Figure 1 As shown, a high-brightness LED module is provided, comprising:

[0065] A plurality of LED pixel units are arranged in an array; each LED pixel unit includes: a transparent conductive layer 105, a P-type epitaxial layer 104, a light-emitting layer 103, and an N-type epitaxial layer 102 stacked sequentially in a first direction; wherein, the first surface of the N-type epitaxial layer 102 has a light-emitting roughening structure 113 formed thereon; the first surface of the N-type epitaxial layer 102 represents the side of the N-type epitaxial layer 102 facing away from the light-emitting layer 103; the materials of the P-type epitaxial layer 104 and the N-type epitaxial layer 102 are GaN; of course, the materials of the P-type epitaxial layer 104 and the N-type epitaxial layer 102 can also be other implementations, and any implementation of the materials of the P-type epitaxial layer 104 and the N-type epitaxial layer 102 is within the protection scope of this invention, and this invention is not limited thereto;

[0066] One or more cathode columns;

[0067] Metal air bridge structure 108; the metal air bridge structure 108 is connected between a plurality of the N-type epitaxial layers 102 and extends on the sidewall and surface of the cathode column;

[0068] CMOS driver circuit substrate 101;

[0069] A plurality of P-pad structures 107 are formed between a portion of the transparent conductive layer 105 and the CMOS driving circuit substrate 101; wherein, the epitaxial stack structure not connected to the P-pad structure 107 is not used for light emission, but is used as a cathode pillar; wherein the epitaxial stack structure includes: a P-type epitaxial layer 104, a light-emitting layer 103 and an N-type epitaxial layer 102.

[0070] Several N-pad structures 106; the metal air bridge formed on the surface of a portion of the cathode pillar.

[0071] Structure 108

[0072] The cathode pillar, the metal air bridge structure 108, and the plurality of N-pad structures 106 form a common cathode structure.

[0073] Photoresist structure 109; in one specific example, the material of the photoresist structure 109 is black glue;

[0074] A plurality of fluorescent structural units are arranged in an array; each fluorescent structural unit includes: a reflector layer 111, a fluorescent structure 110, and a lens structure 112; wherein, the plurality of fluorescent structures 110 are arranged in an array within a photoresist structure 109 and penetrate the photoresist structure 109; in each fluorescent structural unit, the reflector layer 111 is formed on the sidewall of the fluorescent structure 110; the lens structure 112 is formed at the top of the corresponding fluorescent structure 110; in one specific embodiment, the material of the lens structure 112 is silicon dioxide or resin; of course, the material of the lens structure 112 can also be other implementations, and any implementation of the material of the lens structure 112 is within the protection scope of this invention, and this invention is not limited thereto;

[0075] In one specific embodiment, the material of the reflective mirror film is a highly reflective material such as Al, Ag, or DBR; of course, the material of the reflective mirror film can also be other implementations, and any implementation of the material of the reflective mirror film is within the protection scope of this invention, but this invention is not limited thereto.

[0076] In this embodiment, the fluorescent structure 110 in the fluorescent structural unit is correspondingly bonded to the light-emitting roughening structure 113 in the LED pixel unit; and at least a portion of the LED pixel units have the fluorescent structural unit correspondingly formed at their top ends. In one specific embodiment, the material of the fluorescent structure 110 is: glass fluorescent structure 110 or ceramic fluorescent structure 110. Of course, the material of the fluorescent structure 110 can also be other implementations, and any implementation of the material of the fluorescent structure 110 is within the protection scope of this invention, and this invention is not limited thereto;

[0077] Each LED pixel unit has a light-emitting roughening structure 113 on its light-emitting surface. Therefore, by utilizing the scattering effect of the light-emitting roughening structure 113, the total internal reflection phenomenon of the light emitted from the LED pixel unit on the light-emitting surface can be destroyed, thereby improving the external quantum light-emitting efficiency and increasing the chip's light-emitting brightness.

[0078] In one embodiment, the fluorescent structure unit is formed on the top of some of the LED pixel units, and the fluorescent structure units are densely arranged on the top of the LED module; then the array arrangement of the fluorescent structure units is consistent with the array arrangement of the LED pixel units.

[0079] In another embodiment, the fluorescent structure unit is formed on the top of some of the LED pixel units, and the fluorescent structure units are scattered on the top of the LED module.

[0080] In other embodiments, each LED pixel unit in the LED module has a fluorescent structure unit formed at its top, and the array arrangement of the fluorescent structure unit is also consistent with the array arrangement of the LED pixel unit.

[0081] The present invention provides a high-brightness LED module in which fluorescent structural units are formed on the light-emitting surfaces of at least some LED pixel units; wherein, a plurality of fluorescent structural units are isolated from each other by photoresist structures; since photoresist structures are filled between the fluorescent structural units, the phenomenon of optical crosstalk between the light beams emitted from the LED pixel units is avoided, thereby improving the resolution of the LED module. Each fluorescent structural unit includes a mirror layer, a fluorescent structure, and a lens structure. The fluorescent structure in the fluorescent structural unit is bonded to the light-emitting roughening structure in the LED pixel unit. The mirror layer is formed on the sidewall of the fluorescent structure. The lens structure is formed at the top of the corresponding fluorescent structure. The light-emitting surface of the LED pixel unit has a light-emitting roughening structure, which breaks the total internal reflection phenomenon of the light emitted from the LED pixel unit, improves the external quantum light extraction efficiency, and increases the chip's light-emitting brightness. The fluorescent structure is used to perform color conversion on the light beam emitted from the LED pixel unit. The mirror layer is used to reflect the light emitted from the LED pixel unit, preventing light loss from the periphery of the fluorescent structure. Therefore, more light beams can be converted by the fluorescent structure and emitted from the lens structure, thus improving the light concentration and chip's light-emitting brightness. The lens structure can form a focusing effect on the light converted by the fluorescent structure, making the light emission angle smaller, thus further improving the chip's light-emitting brightness. As can be seen, the technical solution provided by this invention improves the light concentration and chip brightness while also increasing the resolution of the LED module.

[0082] According to another embodiment of the present invention, a method for manufacturing a high-brightness LED module is also provided, the process flow diagram of which is shown below. Figure 6 As shown; the method includes:

[0083] S11: An LED module is provided; the LED module includes: LED pixel units, a metal air bridge structure 108, a CMOS driving circuit substrate 101, a plurality of P-pad structures 107, a plurality of N-pad structures 106, and one or more cathode pillars; wherein, the LED pixel unit includes: a transparent conductive layer 105, a P-type epitaxial layer 104, a light-emitting layer 103, and an N-type epitaxial layer 102; wherein, the transparent conductive layer 105, the P-type epitaxial layer 104, the light-emitting layer 103, and the N-type epitaxial layer 102 are stacked sequentially along a first direction, and a plurality of LED pixel units are arranged in an array; wherein, the first surface of the N-type epitaxial layer 102 has a light-emitting roughening structure 113; the first surface of the N-type epitaxial layer 102 The N-type epitaxial layer 102 is characterized by the side facing away from the light-emitting layer 103; wherein, the light-emitting roughening structure 113 is a microstructure etched by a chemical solution; the metal air bridge structure 108 connects between several N-type epitaxial layers 102 and extends on the sidewall and surface of the cathode pillar; several P-pad structures 107 are formed between the transparent conductive layer 105 and the CMOS driving circuit substrate 101; several N-pad structures 106 are formed on the metal air bridge structure 108 on part of the surface of the cathode pillar and connected to the CMOS driving circuit substrate 101; wherein, the cathode pillar, the metal air bridge structure 108, and the several N-pad structures 106 form a common cathode structure; the LED module is as follows Figure 2 As shown;

[0084] S12: Provide a fluorescent sheet 114;

[0085] S13: Forming a plurality of lens structures 112; the plurality of lens structures 112 are arranged in an array on the fluorescent...

[0086] The first surface of the light sheet 114;

[0087] S14: Bond the second surface of the phosphor sheet 114 to the light-emitting roughening structure 113; the first surface and the second surface are arranged opposite to each other; as shown in the example. Figure 3 As shown;

[0088] S15: Etch the phosphor sheet 114 to form an independent phosphor structure 110 and lens structure 112 at the top of each corresponding LED pixel unit;

[0089] S16: Forming a plurality of mirror layers 111; the mirror layers 111 are formed on the sidewalls of the corresponding fluorescent structures 110; the mirror layers 111, the fluorescent structures 110, and the lens structure 112 form fluorescent structure units, and a plurality of fluorescent structure units are arranged in an array; such as Figure 5 As shown;

[0090] S17: Forming a photoresist structure 109; the photoresist structure 109 is formed on the light-emitting roughened structure 113 and fills the gaps between the arrayed fluorescent structural units; in one embodiment, the photoresist structure 109 is formed by spin coating; such as Figure 1 As shown;

[0091] The array arrangement of the plurality of lens structures 112 is adapted to the array arrangement of the LED pixel units in the LED module, such that when the phosphor sheet 114 is bonded to the LED module, at least some of the LED pixel units have the lens structure 112 correspondingly formed at their top ends.

[0092] In one embodiment, a plurality of lens structures 112 are formed at the top of some of the LED pixel units, and the plurality of lens structures 112 are densely arranged at the top of the LED module; then the array arrangement of the plurality of lens structures 112 is consistent with the array arrangement of the LED pixel units; so that the final fluorescent structure units are densely arranged at the top of the LED module, and the array arrangement of the fluorescent structure units is consistent with the array arrangement of the LED pixel units.

[0093] In another embodiment, only the top of a portion of the LED pixel units is correspondingly formed with the plurality of lens structures 112, and the plurality of lens structures 112 are scattered at the top of the LED module; so that only the top of a portion of the LED pixel units is ultimately correspondingly formed with the plurality of fluorescent structure units, and the fluorescent structure units are scattered at the top of the LED module.

[0094] In other embodiments, each LED pixel unit in the LED module has a plurality of lens structures 112 formed at its top, and the array arrangement of the plurality of lens structures 112 is also consistent with the array arrangement of the LED pixel units; so that each LED pixel unit in the final LED module has a plurality of fluorescent structure units formed at its top, and the array arrangement of the fluorescent structure units is also consistent with the array arrangement of the LED pixel units.

[0095] This invention provides a method for fabricating a high-brightness LED module. First, a phosphor sheet is provided; several lens structures are formed on the first surface of the phosphor sheet; the second surface of the phosphor sheet is bonded to a light-emitting roughening structure; the phosphor sheet is etched to form independent phosphor structures and lens structures at the top of corresponding LED pixel units; corresponding mirror layers are formed on the sidewalls of the phosphor structures to form several phosphor structure units arranged in an array; a photoresist structure is formed on the light-emitting roughening structure, and the photoresist structure also fills the gaps between the several phosphor structure units arranged in the array; the array arrangement of the several lens structures is adapted to the array arrangement of the LED pixel units in the LED module, such that when the phosphor sheet is bonded to the LED module, at least some of the LED pixel units have lens structures correspondingly formed at their top ends, thus ultimately at least some of the LED pixel units have phosphor structures correspondingly formed at their top ends. Because photoresist structures are filled between the phosphor structure units, crosstalk between the light beams emitted from the LED pixel units is avoided, improving the resolution of the LED module. The light-emitting surface of the LED pixel unit is equipped with a light-emitting roughening structure, which disrupts the total internal reflection phenomenon of the light emitted from the LED pixel unit, improving the external quantum light extraction efficiency and increasing the chip's brightness. The fluorescent structure is used to perform color conversion on the light beam emitted from the LED pixel unit. The reflective mirror layer reflects the light emitted from the LED pixel unit, preventing light loss due to light emanating from around the fluorescent structure. Therefore, more light beams can be converted by the fluorescent structure and emitted through the lens structure, thus improving light concentration and chip brightness. The lens structure can focus the light converted by the fluorescent structure, resulting in a smaller light emission angle, further improving chip brightness. Therefore, the technical solution provided by this invention improves both light concentration and chip brightness while also increasing the resolution of the LED module.

[0096] In one embodiment, the method used to form the plurality of lens structures 112 is an etching process or an imprinting process.

[0097] Secondly, according to an embodiment of the present invention, an LED chip is also provided, comprising the high-brightness LED module described in any of the foregoing embodiments of the present invention.

[0098] According to one embodiment of the present invention, a method for manufacturing an LED chip is also provided, including the method for manufacturing a high-brightness LED module as described in any of the foregoing embodiments of the present invention.

[0099] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-brightness LED module, characterized by, The LED module comprises: a plurality of LED pixel units arranged in an array; each LED pixel unit comprises: a transparent conductive layer, a P-type epitaxial layer, a light-emitting layer, and an N-type epitaxial layer stacked in sequence in a first direction; wherein a first surface of the N-type epitaxial layer is formed with a light-emitting roughening structure; the first surface of the N-type epitaxial layer represents a surface of the N-type epitaxial layer facing away from the light-emitting layer; one or more than two cathode columns; a metal-air bridge structure; the metal-air bridge structure is connected between a plurality of N-type epitaxial layers and extends on the sidewall and surface of the cathode column; a CMOS driving circuit substrate; a plurality of P-pad structures; formed between part of the transparent conductive layer and the CMOS driving circuit substrate; a plurality of N-pad structures; formed on the metal-air bridge structure on part of the surface of the cathode column and connected to the CMOS driving circuit substrate; wherein the cathode column, the metal-air bridge structure and the plurality of N-pad structures form a common cathode structure; a photoresist structure; a plurality of fluorescent structure units arranged in an array; each fluorescent structure unit comprises: a mirror layer, a fluorescent structure, and a lens structure; wherein the plurality of fluorescent structures are arranged in the photoresist structure and penetrate the photoresist structure; in each fluorescent structure unit, the mirror layer is formed on the sidewall of the fluorescent structure; and the lens structure is formed at the top end of the corresponding fluorescent structure; wherein the fluorescent structure in the fluorescent structure unit is bonded to the light-emitting roughening structure in the LED pixel unit; and at least part of the top end of the LED pixel unit corresponds to the formation of the fluorescent structure unit.

2. The high-brightness LED module of claim 1, wherein, The material of the photoresist structure is black glue.

3. The high-brightness LED module of claim 1, wherein The material of the lens structure is: silicon dioxide or resin.

4. The high-brightness LED module of claim 3, wherein, The fluorescent structure is: a glass fluorescent structure or a ceramic fluorescent structure.

5. A method for manufacturing a high-brightness LED module, characterized in that, The LED module comprises: providing an LED module; the LED module comprises: LED pixel units, a metal-air bridge structure, a CMOS driving circuit substrate, a plurality of P-pad structures, a plurality of N-pad structures, and one or more than two cathode columns; wherein the LED pixel units comprise: a transparent conductive layer, a P-type epitaxial layer, a light-emitting layer, and an N-type epitaxial layer; wherein the transparent conductive layer, the P-type epitaxial layer, the light-emitting layer, and the N-type epitaxial layer are stacked in sequence in a first direction, and a plurality of LED pixel units are arranged in an array; wherein a first surface of the N-type epitaxial layer is formed with a light-emitting roughening structure; the first surface of the N-type epitaxial layer represents a surface of the N-type epitaxial layer facing away from the light-emitting layer; the metal-air bridge structure is connected between a plurality of N-type epitaxial layers and extends on the sidewall and surface of the cathode column; the plurality of P-pad structures are formed between the transparent conductive layer and the CMOS driving circuit substrate; the plurality of N-pad structures are formed on the metal-air bridge structure on part of the surface of the cathode column and connected to the CMOS driving circuit substrate; wherein the cathode column, the metal-air bridge structure and the plurality of N-pad structures form a common cathode structure; and a fluorescent sheet is provided; forming a plurality of lens structures; the plurality of lens structures are arrayed on a first surface of the fluorescent sheet bonding a second surface of the fluorescent sheet on the light-exiting roughened structure; the first surface and the second surface are oppositely arranged; etching the fluorescent sheet to form independent fluorescent structures and lens structures on the top end of each corresponding LED pixel unit; forming a plurality of mirror layers; the mirror layers are formed on the sidewall of the corresponding fluorescent structure; the mirror layers, the fluorescent structure and the lens structure form a fluorescent structure unit, and a plurality of the fluorescent structure units are arrayed; forming a photoresist structure; the photoresist structure is formed on the light-exiting roughened structure and filled in the gap between the arrayed fluorescent structure units; wherein the arrayed manner of the plurality of lens structures is adapted to the arrayed manner of the LED pixel units in the LED module, so that when the fluorescent sheet is bonded on the LED module, the top end of at least part of the LED pixel units corresponds to form the lens structure.

6. The method of claim 5, wherein the method further comprises: The method adopted in forming the plurality of lens structures is etching process or imprinting process.

7. An LED chip, characterized by The high-brightness LED module of any one of claims 1-4.

8. A method for manufacturing an LED chip, characterized in that, The manufacturing method of the high-brightness LED module of any one of claims 5-6.

Images