Preparation method of embedded transparent metal micro-grid electrode and application thereof
By fabricating embedded transparent metal microgrid electrodes on transparent conductive glass, the problem that commercial ITO transparent conductive film materials cannot simultaneously meet the requirements of high transmittance and high conductivity is solved, thereby improving conductivity and mechanical stability, and making it suitable for novel electrochromic energy storage devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HUNAN UNIV
- Filing Date
- 2023-08-03
- Publication Date
- 2026-05-12
AI Technical Summary
Existing commercially available ITO transparent conductive film materials cannot simultaneously meet the requirements of high light transmittance and high conductivity, and have poor chemical stability, making them unsuitable for direct commercial application.
A method of selectively embedding non-rare metal microgrids is adopted to fabricate embedded transparent metal microgrid electrodes on transparent conductive glass using photolithography. The metal microgrid structure is then embedded in the conductive layer using ion beam etching and sputtering techniques, which simplifies the fabrication process and reduces costs.
This improves the conductivity and mechanical stability of transparent conductive electrodes, reduces processing difficulty and cost, and meets the needs of novel electrochromic energy storage devices.
Smart Images
Figure CN117156935B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the fabrication of transparent conductive electrodes, and specifically to a method for fabricating an embedded transparent metal microgrid electrode for electrochromic energy storage devices. Background Technology
[0002] Electrochromic energy storage devices are a recently introduced concept in the field of electrochromic displays and are considered one of the most promising technologies for next-generation functional display devices. In terms of structure and reaction mechanism, they are similar to typical secondary batteries. These smart batteries have been redesigned to integrate electrochromic energy storage, enabling applications in new fields or as backup power. Compared to traditional electrochromic devices, electrochromic energy storage devices can partially recover energy consumed by energy storage display devices, showing disruptive and innovative application prospects in fields such as smart displays and green buildings.
[0003] Common electrochromic energy storage devices typically consist of a multilayer structure, including an electrochromic layer (containing a redox-active material with tunable optical properties), an ion storage layer (storing the redox-active material for charge balance), an ion transport layer (an electrolyte for ion transport), and two transparent conductive electrodes. When a potential difference exists between the two transparent conductive electrodes, ions in the ion storage layer are injected into the electrochromic layer through the ion transport layer under the influence of a spatial electric field, thereby altering its optical properties. This charge injection is accompanied by the movement of reverse ions or electrons to balance the charge in the electrode layer. During this process, the conductivity and transmittance of the electrochromic positive electrode directly affect the switching time, optical contrast, and even coloring efficiency of the electrochromic energy storage device. Currently, the commercially available transparent conductive thin film material widely used in electrochromic energy storage devices is mainly indium-doped ITO (In₂O₃:Sn), which possesses high mechanical strength and good wear and corrosion resistance (except for hydrofluoric acid). However, commercial ITO requires deposition on a transparent substrate. While commonly used methods such as magnetron sputtering offer advantages such as high film purity, high efficiency, strong adhesion, and good density and uniformity, they cannot simultaneously meet the performance requirements of high transmittance (small film thickness) and high conductivity (large film thickness). To find a solution for transparent electrodes with high transmittance and low sheet resistance, metal-based transparent electrodes have been proposed and have achieved breakthroughs in the last five years, becoming one of the promising materials to replace ITO. However, overall, problems such as the poor chemical stability of metal-based transparent electrodes, insufficient adhesion to conductive glass, and the inability to directly commercialize their freestanding structures remain difficult to solve in the short term. Summary of the Invention
[0004] Transparent electrodes with high transmittance and low sheet resistance are core components of next-generation optoelectronic display devices. Currently, commercially available transparent electrodes are mainly made of indium-doped ITO, but their poor conductivity and brittleness have limited their large-scale application. This invention provides a method for fabricating embedded transparent metal microgrid electrodes and their applications. By selectively embedding non-rare metal microgrids, the conductivity and mechanical stability of commercially available ITO are greatly improved. Simultaneously, the introduction of photolithography simplifies the fabrication process and reduces processing costs. The fabricated transparent metal microgrid electrode possesses both high transmittance and high conductivity, meeting the needs of current novel electrochromic energy storage devices.
[0005] First, a patterned mask using photoresist is designed and fabricated on the ITO surface using photolithography. Then, ion beam etching is used to etch trenches into the conductive layer of transparent conductive glass, locally matching the pattern of the custom mask. Finally, ion beam sputtering is used to deposit Cr and Ni metals sequentially in the trenches to fabricate an embedded transparent metal microgrid electrode, which serves as the electrochromic positive current collector in an electrochromic energy storage device. This fabrication method utilizes the masking properties of photoresist, enabling the fabrication of an embedded transparent metal microgrid electrode using only a single mask throughout the entire manufacturing process. This significantly reduces manufacturing difficulty and processing costs, demonstrating great potential in the fabrication of high-performance electrochromic electrodes and novel electrochromic energy storage devices.
[0006] A method for fabricating an embedded transparent metal micromesh electrode, characterized by comprising the following steps:
[0007] (1) The small transparent conductive glass was ultrasonically cleaned with anhydrous ethanol and deionized water, and then placed in a blower dryer to dry.
[0008] (2) Apply positive photoresist evenly to the conductive layer surface of the transparent conductive glass using a spin coater. Then dry it on a baking plate, and let it stand and cool to room temperature to obtain transparent conductive glass with photoresist on the surface.
[0009] (3) Place the customized photomask over the transparent conductive glass with photoresist applied to its surface obtained in step (2), and place it under an illumination power of 20–40 mW / cm². 2 Exposure is performed on an ultraviolet lithography machine with an illumination intensity of 100%–105%. After exposure, the custom mask is removed, resulting in transparent conductive glass with locally modified surface photoresist.
[0010] (4) Place the transparent conductive glass with locally modified surface photoresist obtained in step (3) into a self-made developing solution (0.5% NaOH solution), develop for 40-60 seconds, take it out, rinse off the residual NaOH solution on the surface with deionized water, and then blow it dry with a nitrogen gun to obtain a transparent conductive glass with patterned photoresist on the surface.
[0011] (5) Place the transparent conductive glass with patterned photoresist on its surface obtained in step (4) into an ion beam etching apparatus. Using the patterned photoresist as a mask, selectively etch patterned trenches into the conductive layer of the transparent conductive glass using ion beam etching technology. The trench pattern is locally consistent with the customized mask, and the trench depth is consistent with the thickness of the conductive layer, thus obtaining a transparent conductive glass with patterned trenches on its surface. The main parameters of ion beam etching are: cathode current 6.5-7.0A, neutralization current 5-6A, arc voltage 40-60V, grid voltage 440-460V, accelerating voltage 300-310V, auxiliary coupling coefficient 1.25, and sputtering rate approximately 0.3nm / s.
[0012] (6) The transparent conductive glass with patterned trenches obtained in step (5) is placed in an ion beam sputtering apparatus. Using patterned photoresist as a mask, a certain thickness of Cr and Ni metal (the total thickness of Cr and Ni metal is consistent with the trench depth) is sputtered sequentially in the patterned trenches using ion beam sputtering technology to obtain a transparent conductive glass with an embedded metal microgrid. The main parameters of ion beam sputtering are: ion source energy of 500 eV, neutralization current of 60-70 A, beam current of 50-60 A, and sputtering rate of approximately 0.143 nm / s.
[0013] (7) The transparent conductive glass with embedded metal microgrid obtained in step (6) is placed in a homemade resist remover solution for ultrasonic cleaning. The homemade resist remover solution is a 5% NaOH solution (the solvent is N-methylpyrrolidone). After cleaning, it is rinsed with deionized water to remove the photoresist and excess metal on the surface of the transparent conductive glass, thus obtaining the embedded transparent metal microgrid electrode.
[0014] Preferably, the conductive glass in step (1) is transparent conductive glass with a size of 4 inches. Transparent conductive glass is the optimal material for conductive substrates, which can achieve uniform conductivity on the surface of embedded transparent metal microgrid electrodes. Embedded transparent metal microgrid electrodes made with transparent conductive glass as a substrate have the best light transmittance and conductivity.
[0015] Preferably, the spin coater parameters in step (2) are first set at 500 r / min for 10 s, and then at 800 r / min for 30 s as the optimal parameters for spin coating photoresist. Under these parameters, the photoresist is uniformly coated and completely covered, which can effectively reduce the amount of photoresist used and greatly reduce the manufacturing cost.
[0016] Preferably, the baking temperature of 100°C and the drying time of 3 min in step (2) are the optimal drying parameters. Under these parameters, the photoresist is completely cured and the photosensitive components are retained to the maximum extent.
[0017] Preferably, the customized mask described in step (3) can effectively eliminate interference moiré patterns of embedded transparent metal microgrid electrodes.
[0018] Preferably, the exposure power in step (3) is 30mW / cm. 2 The optimal exposure parameters are 102.1% light intensity and 120s exposure time, which can minimize the linewidth of the metal grid and ensure the high light transmittance of the embedded transparent metal microgrid electrode.
[0019] Preferably, the self-made developing solution (0.5% NaOH solution) and developing time of 50s described in step (4) are the optimal combination of developing parameters, which can achieve complete formation of the photoresist mask and ensure the finest line width of the mask pattern.
[0020] Preferably, the ion beam etching parameters in step (5) are: cathode current of 6.51A, neutralization current of 6.00A, arc voltage of 50V, grid voltage of 450V, accelerating voltage of 300V, auxiliary coupling coefficient of 1.25, and sputtering rate of approximately 0.3nm / s. These are the optimal ion beam etching parameters, which can achieve selective etching of the conductive layer and ensure the uniform conductivity of the conductive layer.
[0021] Preferably, the ion beam sputtered bottom metal Cr in step (6) is the best metal material, which can effectively improve the bonding force between the metal microgrid and the transparent conductive glass, and ensure the structural stability of the embedded transparent metal microgrid electrode.
[0022] Preferably, the Ni top layer metal sputtered in step (6) is the best metal material, which can effectively improve the overall conductivity of the embedded transparent metal microgrid electrode.
[0023] Preferably, the main parameters of ion beam sputtering in step (6) are ion source energy of 500eV, neutralization current of 62A, beam current of 52A, and sputtering rate of about 0.143nm / s, which are the optimal parameters for ion beam sputtering, which can make the embedded metal microgrid structure dense and the surface smooth.
[0024] Preferably, the 5% NaOH solution (with N-methylpyrrolidone as the solvent) mentioned in step (7) is the optimal concentration of the self-made photoresist remover. At this concentration, the residual photoresist and excess metal are removed most completely, which can ensure the light transmittance of the embedded transparent metal microgrid electrode.
[0025] The embedded transparent metal microgrid electrode manufactured by the above method has a transmittance of 83.7% at a wavelength of 633 nm and a sheet resistance of 5.38 Ω / □.
[0026] The principle of this invention is as follows: Utilizing the patterning mask properties of photoresist, ion beam etching and ion beam sputtering processes are introduced to selectively embed a metal microgrid structure into the conductive layer of a transparent conductive electrode. Attaching a photoresist mask to the surface of the transparent conductive electrode enables selective etching and sputtering deposition of the conductive layer during ion beam etching and sputtering, without damaging other surfaces of the conductive layer, thus preserving the original transmittance and conductivity uniformity of the transparent conductive electrode. Simultaneously, the embedding of the metal microgrid significantly improves the conductivity of the transparent conductive electrode without affecting its transmittance.
[0027] This invention updates the conductive layer of commercial transparent conductive electrodes by selectively embedding a metal microgrid structure into the original conductive layer. This metal microgrid possesses ultra-fine linewidth and ultra-high conductivity. Because of the embedded metal microgrid structure in the conductive layer, the conductivity of the commercial transparent conductive electrode is significantly improved while maintaining light transmittance.
[0028] Compared with other inventions, the present invention has the following outstanding advantages:
[0029] This invention enables the fabrication of embedded transparent metal microgrid electrodes using only one mask during the entire manufacturing process, greatly reducing manufacturing difficulty and processing costs.
[0030] This invention improves the raw materials for commercial transparent electrodes by using non-rare metals to prepare commercial transparent electrodes, thereby reducing manufacturing costs.
[0031] This invention improves the manufacturing method of commercial transparent conductive electrodes by introducing photolithography technology. It utilizes the patterned mask characteristics of photoresist and introduces ion beam etching and ion beam sputtering processes to selectively embed a metal microgrid structure into the conductive layer of transparent conductive glass. This significantly improves conductivity without affecting the original light transmittance of commercial transparent conductive electrodes, enabling them to meet the needs of most current electrochromic energy storage devices.
[0032] This invention improves the mechanical structure of commercial transparent conductive electrodes by selectively embedding a metal microgrid structure into the existing conductive layer. The customizable patterning design gives the metal microgrid structure excellent mechanical flexibility, enabling it to adapt to various complex applications, thus improving the mechanical stability of the transparent conductive electrode and broadening its application scenarios. Attached Figure Description
[0033] Figure 1 This is a schematic diagram of the manufacturing process of the embedded transparent metal microgrid electrode obtained in Example 1.
[0034] Figure 2 The image shows the microstructure of the embedded transparent metal microgrid electrode obtained in Example 1.
[0035] Figure 3 The conductivity test results and comparisons of commercial transparent conductive glass and the embedded transparent metal microgrid electrode obtained in Example 1 are presented.
[0036] Figure 4 The transmittance test results are for the electrochromic energy storage device prepared by the embedded transparent metal microgrid electrode obtained in Example 2. Detailed Implementation
[0037] Example 1
[0038] First, a 4-inch ITO conductive glass with an ITO conductive layer thickness of approximately 190 nm was ultrasonically cleaned for about 10 minutes using anhydrous ethanol and deionized water, and then dried for 10 hours. Next, a Rayleigh photoresist (PR, RZJ-390PG-50CP) was spin-coated uniformly onto the ITO conductive glass at 500 rpm for 10 seconds, followed by spin-coating at 800 rpm for 30 seconds. The glass was then dried at 100°C for 3 minutes. Subsequently, a patterned photoresist was obtained using photolithography, with a 0.5% NaOH solution as the developer. Then, using the patterned photoresist as a secondary mask, an ion beam etching process was introduced to selectively etch patterned trenches into the ITO conductive layer (approximately 190 nm thick). The trench pattern locally matched the custom mask, and the trench depth was approximately 190 nm. The main parameters were set as follows: cathode current 6.51A, neutralization current 6.00A, arc voltage 50V, grid voltage 450V, accelerating voltage 300V, auxiliary coupling coefficient 1.25, and sputtering rate approximately 0.3nm / s. The etched sample was directly used for ion beam sputtering. Patterned photoresist was used as a triple mask, and metal Cr with a thickness of approximately 5nm and metal Ni with a thickness of approximately 190nm were sputtered sequentially to fill the patterned trenches. The main parameters were set as follows: ion source energy 500eV, neutralization current 62A, beam current 52A, and sputtering rate approximately 0.143nm / s. After ion beam sputtering, the sample was then subjected to simultaneous ultrasonic removal of residual photoresist using a self-made photoresist remover solution. The entire process took about 10 minutes. The self-made photoresist remover solution was a 5% NaOH solution (with N-methylpyrrolidone as the solvent). After the photoresist was removed, the sample was repeatedly cleaned with ethanol and deionized water to obtain an embedded transparent metal microgrid electrode with a size of 4 inches.
[0039] Figure 2This is the microstructure of the embedded transparent metal microgrid electrode. The electrode surface is flat and smooth, with no obvious sputtered metal overflow. Furthermore, the area deposited on the lines is darker than the area outside the lines, reflecting the essential difference between the two materials. In addition, the ITO region is very flat, indicating that the patterned photoresist played a good masking role in both ion beam etching and ion beam sputtering processes.
[0040] Example 2
[0041] First, anhydrous ethanol and deionized water were used to treat a 5*5cm sample. 2 An ITO conductive glass layer with an ITO conductive layer thickness of approximately 190 nm was ultrasonically cleaned for about 10 minutes and dried for 10 hours. Then, a positive photoresist (PR, RZJ-390PG-50CP) was spin-coated uniformly onto the ITO conductive glass at 500 rpm for 10 seconds, followed by spin-coating at 800 rpm for 30 seconds. The glass was then dried at 100°C for 3 minutes. Subsequently, a patterned photoresist was obtained using photolithography, with a 0.5% NaOH solution as the developer. Using the patterned photoresist as a secondary mask, an ion beam etching process was introduced to selectively etch patterned trenches into the ITO conductive layer (approximately 190 nm thick). The trench pattern locally matched the custom mask, and the trench depth was approximately 190 nm. The main parameters were set as follows: cathode current 6.51A, neutralization current 6.00A, arc voltage 50V, grid voltage 450V, accelerating voltage 300V, auxiliary coupling coefficient 1.25, and sputtering rate approximately 0.3nm / s. The etched sample was directly used for ion beam sputtering. Patterned photoresist was used as a triple mask, and metal Cr with a thickness of approximately 5nm and metal Ni with a thickness of approximately 190nm were sputtered sequentially to fill the patterned trenches. The main parameters were set as follows: ion source energy 500eV, neutralization current 62A, beam current 52A, and sputtering rate approximately 0.143nm / s. After ion beam sputtering, the residual photoresist was simultaneously removed using a self-made resist remover in an ultrasonic machine, a process that took approximately 10 minutes. The self-made resist remover was a 5% NaOH solution (N-methylpyrrolidone as the solvent). After resist removal, the sample was repeatedly cleaned with ethanol and deionized water to obtain an embedded transparent metal microgrid electrode with a size of 5*5cm. 2 .
[0042] Performance testing
[0043] The conductivity of the embedded transparent metal microgrid electrode obtained in Example 1 was tested. The conductivity of commercial ITO conductive glass and the embedded transparent metal microgrid electrode was tested and compared using a four-probe sheet resistance meter. Test results and comparisons are provided. Figure 3As shown, the sheet resistance of commercial ITO conductive glass and embedded transparent metal microgrid electrode are 6.51Ω / □ and 5.38Ω / □, respectively. The conductivity of embedded transparent metal microgrid electrode is 17.4% higher than that of commercial ITO conductive glass.
[0044] The size obtained in Example 2 is 5*5cm 2 An electrochromic energy storage device was fabricated using an embedded transparent metal micromesh electrode as the positive current collector. The fabrication method is as follows:
[0045] The size obtained in Example 2 is 5*5cm 2 An embedded transparent metal micromesh electrode was placed in the constructed three-electrode system at a depth of 15 μA cm⁻¹. -2 Prussian blue was electrodeposited for 600 s under constant current density conditions to obtain the positive electrode of an electrochromic energy storage device. The electroplating solution used in the constructed three-electrode system was a mixed solution of K3[Fe(CN)6] (10 mM), FeCl3·6H2O (10 mM), and KCl (50 mM); the selected counter electrode and reference electrode were Pt and Ag / AgCl, respectively.
[0046] A self-supporting zinc mesh was prepared using traditional photolithography and electroplating techniques to serve as the negative electrode of an electrochromic energy storage device. A self-made gel electrolyte was obtained by adding 9 wt% polyvinyl alcohol (PVA), 0.1 MZn(CH3COO)2, and 0.9 MKCl to purified water and stirring until homogeneous.
[0047] The prepared electrochromic energy storage device's positive and negative electrodes, along with a self-made gel electrolyte, were assembled into an electrochromic energy storage device for testing. A 5mm thick layer of 3M double-sided tape was applied around the positive electrode as a spacer to prevent short circuits. The positive and negative electrodes were then assembled together and sealed with UV-cured resin (UV irradiation for 10 minutes) to prevent electrolyte leakage.
[0048] In-situ transmittance testing was performed on the fabricated electrochromic energy storage device. The test results are as follows: Figure 4 As shown, the electrochromic energy storage device achieved a contrast ratio of ΔT = 75% in a two-electrode system, and achieved colorization t over one cycle. c =4.5s, fading time b The rapid switching response process is 4 seconds. Calculations show that the coloring efficiency CE of the electrochromic energy storage device is 130 cm⁻¹. 2 C -1 This demonstrates that by using embedded transparent metal microgrid electrodes, the optical performance of electrochromic energy storage devices can be further improved while enhancing the photoelectric performance of the electrodes themselves.
Claims
1. A method for manufacturing an embedded transparent metal microgrid electrode, characterized in that, Includes the following steps: (1) Clean small transparent conductive glass with anhydrous ethanol and deionized water in an ultrasonic cleaning process, and then dry it in a blower dryer. (2) Apply positive photoresist evenly to the conductive layer surface of transparent conductive glass using a spin coater; then dry it on a baking plate, and then let it stand and cool to room temperature to obtain transparent conductive glass with photoresist on the surface. (3) Place the customized photomask over the transparent conductive glass with photoresist applied to its surface obtained in step (2), and place it under an illumination power of 20–40 mW / cm². 2 Exposure is performed on an ultraviolet lithography machine with an illumination intensity of 100% to 105%; After exposure, the custom mask is removed, resulting in transparent conductive glass with locally modified surface photoresist. (4) Place the locally modified transparent conductive glass with surface photoresist obtained in step (3) in a self-made developing solution, develop for 40-60 seconds, take it out, rinse off the residual NaOH solution on the surface with deionized water, and then blow it dry with a nitrogen gun to obtain a transparent conductive glass with patterned photoresist on the surface; the self-made developing solution is a 0.5% NaOH solution. (5) Place the transparent conductive glass with patterned photoresist on the surface obtained in step (4) into an ion beam etching device. Using the patterned photoresist as a mask, use ion beam etching technology to selectively etch patterned trenches on the conductive layer of the transparent conductive glass. The trench pattern is locally consistent with the customized mask, and the trench depth is consistent with the conductive layer thickness, thus obtaining a transparent conductive glass with patterned trenches on the surface. The ion beam etching parameters are as follows: cathode current 6.5–7.0 A, neutralization current 5–6 A, arc voltage 40–60 V, grid voltage 440–460 V, accelerating voltage 300–310 V, auxiliary coupling coefficient 1.25, and sputtering rate 0.3 nm / s. (6) The transparent conductive glass with patterned trenches obtained in step (5) is placed in an ion beam sputtering device. Using patterned photoresist as a mask, a certain thickness of metal Cr and metal Ni are sputtered into the patterned trenches using ion beam sputtering technology to obtain transparent conductive glass with embedded metal microgrid. The main parameters of ion beam sputtering are: ion source energy of 500 eV, neutralization current of 60-70 A, beam current of 50-60 A, and sputtering rate of 0.143 nm / s. The total thickness of the metal Cr and metal Ni is consistent with the trench depth. (7) Place the transparent conductive glass with embedded metal microgrid obtained in step (6) into a homemade resist remover solution for ultrasonic cleaning. The homemade resist remover solution is a 5% NaOH solution. After cleaning, rinse with deionized water to remove the photoresist and excess metal on the surface of the transparent conductive glass to obtain the embedded transparent metal microgrid electrode.
2. The method for manufacturing an embedded transparent metal microgrid electrode as described in claim 1, characterized in that, The small-sized transparent conductive glass mentioned in step (1) is 1 to 5 inches.
3. The method for manufacturing an embedded transparent metal microgrid electrode as described in claim 1, characterized in that, The positive photoresist used in step (2) is model RZJ-390PG-50CP. The spin coater parameters are set as follows: first spin coat at 400-600 r / min for 8-12 s, then spin coat at 750-850 r / min for 28-32 s; so that the photoresist is evenly coated and completely covered.
4. The method for manufacturing an embedded transparent metal microgrid electrode as described in claim 1, characterized in that, The baking plate temperature used in step (2) is set to 90-110℃ and the drying time is 2-4 minutes, so that the photoresist is completely cured and the photosensitive components in the photoresist are retained to the maximum extent.
5. The method for manufacturing an embedded transparent metal microgrid electrode as described in claim 1, characterized in that, The photomask used in step (3) is a custom photomask, and the exposure parameters are: illumination power of 45-55 mW / cm². 2 The light intensity is 100-103%, and the exposure time is 115-125 seconds.
6. The method for manufacturing an embedded transparent metal microgrid electrode as described in claim 1, characterized in that, The homemade developing solution used in step (4) is a 0.5% NaOH solution, and the developing time is 50s.
7. The method for manufacturing an embedded transparent metal microgrid electrode as described in claim 1, characterized in that, Step (5) The trench pattern etched by ion beam etching technology is locally consistent with the customized mask, and the trench depth is consistent with the conductive layer thickness of the transparent conductive glass used. The ion beam etching parameters are: cathode current of 6.5-6.8A, neutralization current of 5.5-6A, arc voltage of 45-55V, grid voltage of 445-455V, accelerating voltage of 300-305V, auxiliary coupling coefficient of 1.25, and sputtering rate of 0.3nm / s.
8. The method for manufacturing an embedded transparent metal micromesh electrode as described in claim 1, characterized in that, Step (6) The bottom metal of ion beam sputtering is Cr, and the sputtering thickness is 3-10 nm; the top metal of ion beam sputtering is Ni, and the total thickness of metal Cr and metal Ni is consistent with the trench depth.
9. The method for manufacturing an embedded transparent metal microgrid electrode as described in claim 1, characterized in that, The homemade adhesive remover used in step (7) is a 5% NaOH solution with N-methylpyrrolidone as the solvent.
10. The method for manufacturing an embedded transparent metal microgrid electrode as described in claim 1, characterized in that, A transparent metal microgrid electrode was prepared and applied to an electrochromic energy storage device.