High frequency module and communication device

Abstract

This reduces the degradation of characteristics. The high-frequency module (1) includes a first power amplifier circuit (2), a second power amplifier circuit (3), and a substrate (7). The first power amplifier circuit (2) includes a first amplification component (21) and a first transformer. The second power amplifier circuit (3) includes a second amplification component (31) and a second transformer. The high-frequency module (1) also includes an elongated bump (8) disposed on a main surface of the substrate (7). The first amplification component (21) is disposed on a main surface of the substrate (7) via the elongated bump (8). When viewed from the thickness direction (D1) of the substrate (7), the elongated bump (8) is located between the first transformer and the second transformer.

Description

Technical Field

[0001] This invention generally relates to a high-frequency module and a communication device, and more specifically, to a high-frequency module having multiple power amplifier circuits and a communication device having the high-frequency module. Background Technology

[0002] Patent Document 1 describes an amplifier. The amplifier described in Patent Document 1 includes an amplifier component, a first output transformer, and a first phase-shifting element. The amplifier component amplifies a first signal allocated from the input signal and outputs a second signal in a region where the power level of the input signal is above a first level. The first output transformer includes a first input-side winding into which the second signal is input and a first output-side winding electromagnetically coupled to the first input-side winding. The first phase-shifting element is connected in parallel with the first output-side winding and outputs a fifth signal whose phase is advanced by approximately φ degrees compared to the signal output from the first output-side winding.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-137566 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In addition, in high-frequency modules with multiple transformers, signal crosstalk sometimes occurs between the transformers, which degrades the characteristics.

[0008] The present invention was made in view of the above-mentioned problems, and its object is to provide a high-frequency module and communication device that can reduce the degradation of characteristics.

[0009] Solution for solving the problem

[0010] One aspect of the present invention relates to a high-frequency module comprising a first power amplifier circuit, a second power amplifier circuit, and a substrate. The first power amplifier circuit amplifies a first transmitted signal in a transmission band of a first communication frequency band. The second power amplifier circuit amplifies a second transmitted signal in a transmission band of a second communication frequency band. The substrate has a main surface. The first power amplifier circuit includes a first amplifying component and a first transformer. The first amplifying component has a first amplifying element and a second amplifying element. The first transformer has a first coil and a second coil. A first end of the first coil is connected to an output terminal of the first amplifying element. A second end of the first coil is connected to an output terminal of the second amplifying element. The second coil is connected to an output terminal of the first power amplifier circuit. The second power amplifier circuit includes a second amplifying component and a second transformer. The second amplifying component has a third amplifying element and a fourth amplifying element. The second transformer has a third coil and a fourth coil. A first end of the third coil is connected to an output terminal of the third amplifying element. A second end of the third coil is connected to an output terminal of the fourth amplifying element. The fourth coil is connected to an output terminal of the second power amplifier circuit. The high-frequency module also includes an elongated bump. The elongated bump is disposed on the main surface of the substrate. The first amplifying component is disposed on one main surface of the substrate via the elongated bump. Viewed from the thickness direction of the substrate, the elongated bump is located between the first transformer and the second transformer.

[0011] One aspect of the present invention relates to a communication device comprising the aforementioned high-frequency module and a signal processing circuit. The signal processing circuit processes the signal from the high-frequency module.

[0012] The effects of the invention

[0013] According to the above-described manner of the present invention, the high-frequency module and communication device can reduce the degradation of characteristics. Attached Figure Description

[0014] Figure 1 This is a top view of the high-frequency module involved in Implementation Method 1.

[0015] Figure 2 It is the aforementioned high-frequency module. Figure 1 Cross-sectional view of line X1-X1.

[0016] Figure 3 It is the aforementioned high-frequency module. Figure 1 Cross-sectional view of line X2-X2.

[0017] Figure 4 This is a circuit diagram of the main part of the aforementioned high-frequency module.

[0018] Figure 5 This is a schematic diagram of the communication device involved in Embodiment 1.

[0019] Figure 6 This is a top view of the high-frequency module involved in Implementation Method 2.

[0020] Figure 7 This is a circuit diagram of the main part of the aforementioned high-frequency module.

[0021] Figure 8 This is a top view of the high-frequency module involved in Implementation Method 3.

[0022] Figure 9 This is a top view of the high-frequency module involved in Implementation Method 4.

[0023] Figure 10 This is a top view of the high-frequency module involved in Implementation Method 5.

[0024] Figure 11 This is a top view of the high-frequency module involved in Implementation Method 6.

[0025] Figure 12 This is a top view of the high-frequency module involved in Implementation Method 7. Detailed Implementation

[0026] The high-frequency module and communication device according to embodiments 1 to 7 will now be described with reference to the accompanying drawings. The drawings referred to in the following embodiments are schematic, and the size and thickness ratios of the structural elements in the drawings may not reflect the actual dimensions.

[0027] (Implementation Method 1)

[0028] (1) High-frequency module

[0029] The structure of the high-frequency module 1 according to Embodiment 1 will be described with reference to the accompanying drawings.

[0030] like Figure 5 As shown, the high-frequency module 1 involved in Embodiment 1 includes a first power amplifier circuit 2, a second power amplifier circuit 3, a first transmitting filter 41, a second transmitting filter 42, multiple antenna terminals 5, and a switch 6.

[0031] The high-frequency module 1 involved in Embodiment 1 is used, for example, in a communication device 9 that supports multiple modes / multi-bands. The communication device 9 is, for example, a portable telephone (e.g., a smartphone), but is not limited to portable telephones; it could also be a wearable terminal (e.g., a smartwatch). The high-frequency module 1 is, for example, a module capable of supporting 4G (fourth-generation mobile communication) standards, 5G (fifth-generation mobile communication) standards, etc. The 4G standard is, for example, the 3GPP (3rd Generation Partner Project) LTE standard (LTE: Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is a module capable of supporting carrier aggregation and dual connectivity. Here, carrier aggregation and dual connectivity refer to communication using radio waves from multiple frequency bands simultaneously.

[0032] The high-frequency module 1 described in Implementation Method 1 is capable of simultaneously communicating signals within the frequency bands (communication bands) specified in the 4G standard, as well as signals within other frequency bands (communication bands) specified in the 4G standard. The high-frequency module 1 is also capable of simultaneously communicating signals within the frequency bands (communication bands) specified in the 4G standard, as well as signals within the frequency bands (communication bands) specified in the 5G standard. Hereinafter, communication based on carrier aggregation or dual connectivity will also be referred to as simultaneous communication.

[0033] (2) Structural elements of the high-frequency module

[0034] The structural elements of the high-frequency module 1 according to Embodiment 1 will now be described with reference to the accompanying drawings.

[0035] (2.1) First transmitting filter

[0036] Figure 5 The first transmit filter 41 shown is, for example, a mid-frequency band filter. The first transmit filter 41 allows a first transmit signal within a first frequency band of the mid-frequency band to pass through. In Embodiment 1, the first transmit filter 41 allows a first transmit signal of a first communication frequency band specified in the 4G standard to pass through as a first transmit signal of the first frequency band. Here, the first communication frequency band is, for example, Band 4 specified in the 4G standard (transmit band 1710MHz-1755MHz, receive band 2110MHz-2155MHz). That is, the first transmit signal is a signal with the transmit band set to 1710MHz-1755MHz.

[0037] (2.2) Second transmitting filter

[0038] Figure 5 The second transmit filter 42 shown is, for example, a mid-frequency band filter. The second transmit filter 42 allows a second transmit signal within a second frequency band of the mid-frequency band to pass through. In Embodiment 1, the second transmit filter 42 allows a second transmit signal within a second communication frequency band specified in the 4G standard to pass through as a second transmit signal within the second frequency band. Here, the second communication frequency band is, for example, Band 1 (transmit band 1920MHz-1980MHz, receive band 2110MHz-2170MHz) specified in the 4G standard. That is, the second transmit signal is a signal with the transmit band set to 1920MHz-1980MHz.

[0039] (2.3) Antenna terminal

[0040] like Figure 5 As shown, the plurality of antenna terminals 5 include a first antenna terminal 51 and a second antenna terminal 52. The first antenna terminal 51 is electrically connected to the first antenna 911, which will be described later. The second antenna terminal 52 is electrically connected to the second antenna 912, which will be described later.

[0041] (2.4) Switch

[0042] like Figure 5 As shown, switch 6 is a switch for switching the connection destination connected to each antenna terminal of the plurality of antenna terminals 5 (that is, each antenna of the plurality of antennas 91). Switch 6 has a plurality of (two in the example) common terminals 61, 62 and a plurality of (two in the example) select terminals 63, 64.

[0043] Common terminal 61 is electrically connected to first antenna terminal 51. That is, common terminal 61 is electrically connected to first antenna 911 via first antenna terminal 51. Alternatively, a filter or coupler (not shown) may be provided between common terminal 61 and first antenna 911. Common terminal 62 is electrically connected to second antenna terminal 52. That is, common terminal 62 is electrically connected to second antenna 912 via second antenna terminal 52. Alternatively, a filter or coupler (not shown) may be provided between common terminal 62 and second antenna 912. Select terminal 63 is electrically connected to first transmit filter 41. Select terminal 64 is electrically connected to second transmit filter 42.

[0044] Switch 6 selects at least one of the multiple selection terminals 63 and 64 as the connection destination of the common terminal 61. That is, switch 6 selectively connects the first transmit filter 41 and the second transmit filter 42 to the first antenna 911. Additionally, switch 6 selects at least one of the multiple selection terminals 63 and 64 as the connection destination of the common terminal 62. That is, switch 6 selectively connects the first transmit filter 41 and the second transmit filter 42 to the second antenna 912. Furthermore, switch 6 can simultaneously connect one antenna terminal 5 (either the first antenna terminal 51 or the second antenna terminal 52) to both the first transmit filter 41 and the second transmit filter 42. In other words, switch 6 can simultaneously connect one antenna 91 (either the first antenna 911 or the second antenna 912) to both the first transmit filter 41 and the second transmit filter 42.

[0045] (2.5) First power amplifier circuit

[0046] like Figure 4 As shown, the first power amplifier circuit 2 includes a first amplification component 21 and a first output transformer 22. The first power amplifier circuit 2 amplifies the first transmitted signal in the transmission band of the first communication frequency band. The first power amplifier circuit 2 amplifies the signal from the signal processing circuit 92 (see reference). Figure 5 The first transmitted signal is amplified and then output to the first transmitted filter 41 (refer to...). Figure 5 ).

[0047] The first amplification component 21 has a first amplification element 23 and a second amplification element 24. The first amplification component 21 amplifies the first transmitted signal. The first amplification component 21 amplifies the signal from the signal processing circuit 92 (see reference). Figure 5 The first transmitted signal is amplified and then output to the first output transformer 22.

[0048] The first amplifying element 23 amplifies the first transmitted signal. More specifically, the first amplifying element 23 amplifies the non-inverting input signal of the first transmitted signal. The first amplifying element 23 has an input terminal 231 and an output terminal 232. The non-inverting input signal of the first transmitted signal is input to the input terminal 231 of the first amplifying element 23. The output terminal 232 of the first amplifying element 23 is electrically connected to the first coil 25 of the first output transformer 22. Specifically, the output terminal 232 of the first amplifying element 23 is electrically connected to the first end 251 of the first coil 25.

[0049] The second amplifying element 24 amplifies the first transmitted signal. More specifically, the second amplifying element 24 amplifies the signal with the opposite phase to the first transmitted signal, i.e., the inverted input signal. The second amplifying element 24 has an input terminal 241 and an output terminal 242. The inverted input signal of the first transmitted signal is input to the input terminal 241 of the second amplifying element 24. The output terminal 242 of the second amplifying element 24 is electrically connected to the first coil 25 of the first output transformer 22. Specifically, the output terminal 242 of the second amplifying element 24 is electrically connected to the second end 252 of the first coil 25.

[0050] The first output transformer 22 has a first coil 25 and a second coil 26. In the first output transformer 22, there is electromagnetic coupling between the first coil 25 and the second coil 26.

[0051] The first end 251 of the first coil 25 is electrically connected to the output terminal 232 of the first amplifying element 23, and the second end 252 of the first coil 25 is electrically connected to the output terminal 242 of the second amplifying element 24. A bias voltage is provided to the midpoint of the first coil 25 in the first output transformer 22.

[0052] The first end 261 of the second coil 26 is electrically connected to the output terminal 27 of the first power amplifier circuit 2, and the second end 262 of the second coil 26 is connected to ground. In other words, the output terminals 232 of the first output transformer 22, the first amplifying element 23, and the second amplifying element 24 are electrically connected to the output terminal 27.

[0053] The non-inverting input signal amplified by the first amplifying element 23 and the inverting input signal amplified by the second amplifying element 24 undergo impedance transformation through the first output transformer 22 while maintaining opposite phases.

[0054] (2.6) Second power amplifier circuit

[0055] like Figure 4 As shown, the second power amplifier circuit 3 includes a second amplification component 31 and a second output transformer 32. The second power amplifier circuit 3 amplifies the second transmitted signal from the transmission band of the second communication frequency band. The second power amplifier circuit 3 amplifies the signal from the signal processing circuit 92 (see reference 92). Figure 5 The second transmitted signal is amplified and then output to the second transmitted filter 42 (refer to...). Figure 5 ).

[0056] The second amplification component 31 has a third amplification element 33 and a fourth amplification element 34. The second amplification component 31 amplifies the second transmitted signal. The second amplification component 31 amplifies the signal from the signal processing circuit 92 (see reference). Figure 5 The second transmitted signal is amplified and then output to the second output transformer 32.

[0057] The third amplifying element 33 amplifies the second transmitted signal. More specifically, the third amplifying element 33 amplifies the non-inverting input signal of the second transmitted signal. The third amplifying element 33 has an input terminal 331 and an output terminal 332. The non-inverting input signal of the second transmitted signal is input to the input terminal 331 of the third amplifying element 33. The output terminal 332 of the third amplifying element 33 is electrically connected to the third coil 35 of the second output transformer 32. Specifically, the output terminal 332 of the third amplifying element 33 is electrically connected to the first end 351 of the third coil 35.

[0058] The fourth amplifying element 34 amplifies the second transmitted signal. More specifically, the fourth amplifying element 34 amplifies the signal with the opposite phase to the second transmitted signal, i.e., the inverted input signal. The fourth amplifying element 34 has an input terminal 341 and an output terminal 342. The inverted input signal of the second transmitted signal is input to the input terminal 341 of the fourth amplifying element 34. The output terminal 342 of the fourth amplifying element 34 is electrically connected to the third coil 35 of the second output transformer 32. Specifically, the output terminal 342 of the fourth amplifying element 34 is electrically connected to the second end 352 of the third coil 35.

[0059] The second output transformer 32 has a third coil 35 and a fourth coil 36. Electromagnetic coupling exists between the third coil 35 and the fourth coil 36 in the second output transformer 32.

[0060] The first end 351 of the third coil 35 is electrically connected to the output terminal 332 of the third amplifying element 33, and the second end 352 of the third coil 35 is electrically connected to the output terminal 342 of the fourth amplifying element 34. In the second output transformer 32, a bias voltage is provided to the midpoint of the third coil 35.

[0061] The first end 361 of the fourth coil 36 is electrically connected to the output terminal 37 of the second power amplifier circuit 3, and the second end 362 of the fourth coil 36 is connected to ground. In other words, the output terminals 332 of the second output transformer 32, the third amplifying element 33, and the fourth amplifying element 34 are electrically connected to the output terminal 37.

[0062] The non-inverting input signal amplified by the third amplifying element 33 and the inverting input signal amplified by the fourth amplifying element 34 undergo impedance transformation through the second output transformer 32 while maintaining opposite phases.

[0063] (3) Communication device

[0064] like Figure 5As shown, the communication device 9 according to Embodiment 1 includes a high-frequency module 1, multiple (two in the example) antennas 91, and a signal processing circuit 92. The signal processing circuit 92 processes the signal passing through the high-frequency module 1. The signal processing circuit 92 includes a baseband signal processing circuit 93 and an RF signal processing circuit 94.

[0065] like Figure 5 As shown, the baseband signal processing circuit 93 is, for example, a BBIC (Baseband Integrated Circuit), electrically connected to the RF signal processing circuit 94. The baseband signal processing circuit 93 generates I-phase and Q-phase signals based on the baseband signal. The baseband signal processing circuit 93 performs IQ modulation processing by combining the I-phase and Q-phase signals and outputs a transmit signal. At this time, the transmit signal is generated as a modulated signal obtained by amplitude modulation of a carrier signal of a specified frequency with a period longer than the period of the carrier signal.

[0066] like Figure 5 As shown, the RF signal processing circuit 94 is, for example, an RFIC (Radio Frequency Integrated Circuit), located between the high-frequency module 1 and the baseband signal processing circuit 93. The RF signal processing circuit 94 has the function of processing the transmitted signal from the baseband signal processing circuit 93 and processing the received signal received using the antenna 91. The RF signal processing circuit 94 is a multi-band processing circuit capable of generating and amplifying transmitted signals for multiple communication bands.

[0067] Furthermore, in the communication device 9, the baseband signal processing circuit 93 is not an essential structural element.

[0068] (4) Configuration Structure

[0069] Next, the configuration structure of the first power amplifier circuit 2 and the second power amplifier circuit 3 in the high-frequency module 1 will be described with reference to the accompanying drawings.

[0070] like Figures 1-3 As shown, the high-frequency module 1 includes a first power amplifier circuit 2, a second power amplifier circuit 3, a substrate 7, and multiple (two in the example) elongated protrusions 8.

[0071] like Figures 1-3 As shown, the substrate 7 has a first main surface (one main surface) 71 and a second main surface 72. The first main surface 71 and the second main surface 72 face each other in the thickness direction D1 of the substrate 7.

[0072] like Figure 1 and Figure 3As shown, the plurality of elongated bumps 8 include a first elongated bump 8A and a second elongated bump 8B. The plurality of elongated bumps 8 are disposed on the first main surface 71 of the substrate 7.

[0073] like Figure 1 and Figure 2 As shown, the first elongated protrusion 8A includes multiple (two in the example) protrusions 81A and 82A. The multiple protrusions 81A and 82A are arranged along the second direction D22. Each of the multiple protrusions 81A and 82A is elongated and configured with its long side along the second direction D22. The first elongated protrusion 8A has a gap 80A. The gap 80A is located in the second direction D22 between protrusions 81A and 82A.

[0074] like Figure 1 and Figure 2 As shown, the second elongated protrusion 8B includes multiple (two in the example) protrusions 81B and 82B. The multiple protrusions 81B and 82B are arranged along the second direction D22. Each of the multiple protrusions 81B and 82B is elongated and configured with its long side along the second direction D22. The second elongated protrusion 8B has a gap 80B. The gap 80B is located in the second direction D22 between protrusions 81B and 82B.

[0075] First, the configuration of the first power amplifier circuit 2 will be explained. For example... Figures 1-3 As shown, the first amplification component 21 and the first output transformer 22 are disposed on the substrate 7.

[0076] The first amplification component 21 is disposed on the first main surface 71 of the substrate 7 via an elongated protrusion 8. Figure 4 The first amplifying element 23 and the second amplifying element 24 shown are integrated into a single chip as the first amplifying component 21. That is, the first amplifying component 21 includes the first amplifying element 23 and the second amplifying element 24 (see reference). Figure 4 The first amplifying element 23 and the second amplifying element 24 are disposed inside the first amplifying component 21.

[0077] like Figure 2 As shown, the first coil 25 of the first output transformer 22 is formed inside the substrate 7. Figure 1 and Figure 2 As shown, a portion of the second coil 26 of the first output transformer 22 is formed inside the substrate 7, and the remainder is formed on the first main surface 71 of the substrate 7. The second coil 26 is positioned near the output terminal 27 (see reference 26). Figure 4 The first coil 25 is wound counterclockwise, starting from the first end of the first coil 26. The second coil 26 is configured to overlap with the first coil 25 when viewed from above in the thickness direction D1 of the substrate 7.

[0078] Next, the configuration of the second power amplifier circuit 3 will be described. For example... Figure 1 and Figure 2 As shown, the second amplification component 31 and the second output transformer 32 are disposed on the substrate 7.

[0079] The second amplification component 31 is disposed on the first main surface 71 of the substrate 7 via an elongated protrusion 8. Figure 4 The third amplifying element 33 and the fourth amplifying element 34 shown are integrated into a single chip as the second amplifying component 31. That is, the second amplifying component 31 includes the third amplifying element 33 and the fourth amplifying element 34 (see reference). Figure 4 The third amplifying element 33 and the fourth amplifying element 34 are disposed inside the second amplifying component 31.

[0080] like Figure 2 As shown, the third coil 35 of the second output transformer 32 is formed inside the substrate 7. Figure 1 and Figure 2 As shown, a portion of the fourth coil 36 of the second output transformer 32 is formed inside the substrate 7, while the remainder is formed on the first main surface 71 of the substrate 7. The fourth coil 36 is located near the output terminal 37 at one of its two ends (see reference). Figure 4 The first end of the coil is wound clockwise. The fourth coil 36 is configured to overlap with the third coil 35 when viewed from the thickness direction D1 of the substrate 7.

[0081] The second coil 26 of the first output transformer 22 and the fourth coil 36 of the second output transformer 32 are configured such that the directions of the magnetic flux generated by the flowing current are different from each other. For example, the second coil 26 of the first output transformer 22 is arranged on the substrate 7 such that the direction of the magnetic flux φ1 generated at the center is from the first main surface 71 side to the second main surface 72 side. The fourth coil 36 of the second output transformer 32 is arranged on the substrate 7 such that the direction of the magnetic flux φ2 generated at the center is from the second main surface 72 side to the first main surface 71 side.

[0082] exist Figure 2In the first output transformer 22, the magnetic flux φ1 generated by the current flowing through the second coil 26 is in a counterclockwise direction, while the magnetic flux φ2 generated by the current flowing through the fourth coil 36 of the second output transformer 32 is in a clockwise direction. When a first transmission signal is input to the first output transformer 22, that is, when current is input to the first output transformer 22, magnetic flux φ1 is generated in the first output transformer 22 from the first main surface 71 side to the second main surface 72 side. When a second transmission signal is input to the second output transformer 32, that is, when current is input to the second output transformer 32, magnetic flux φ2 is generated in the second output transformer 32 from the second main surface 72 side to the first main surface 71 side. In other words, the first output transformer 22 and the second output transformer 32 are configured such that the directions of the magnetic flux generated by the input transmission signals (first transmission signal and second transmission signal) are different from each other.

[0083] like Figure 1 As shown, when viewed from the thickness direction D1 of the substrate 7, a plurality of elongated bumps 8 are located between the first output transformer 22 and the second output transformer 32. More specifically, in a first direction D21 orthogonal to the thickness direction D1 of the substrate 7, the first elongated bump 8A and the second elongated bump 8B are located between the first output transformer 22 and the second output transformer 32. Specifically, in the first direction D21, the first elongated bump 8A is located between the first output transformer 22 and the second elongated bump 8B, and the second elongated bump 8B is located between the second output transformer 32 and the first elongated bump 8A.

[0084] Here, the elongated bump 8 refers to a bump with an elongated shape. An elongated shape is a shape that is long in one direction, and the elongated direction refers to that direction. More specifically, an elongated shape is a shape that is longer in one direction than in another direction that intersects that direction.

[0085] Therefore, the elongated protrusion 8 can reduce the winding of magnetic flux φ1 from the first output transformer 22 into the second output transformer 32. Similarly, the elongated protrusion 8 can reduce the winding of magnetic flux φ2 from the second output transformer 32 into the first output transformer 22. As a result, the degradation of characteristics can be reduced.

[0086] Furthermore, the width W21 of the first elongated protrusion 8A is wider than the width W11 of the second coil 26 of the first output transformer 22. In other words, in the second direction D22, the length of the first elongated protrusion 8A is longer than the length of the second coil 26 of the first output transformer 22. This allows for further interruption of the magnetic flux φ1 from the second coil 26 of the first output transformer 22 (refer to...). Figure 2 Therefore, it can further reduce the degradation of characteristics.

[0087] Similarly, the width W22 of the second elongated protrusion 8B is wider than the width W12 of the fourth coil 36 of the second output transformer 32. In other words, in the second direction D22, the length of the second elongated protrusion 8B is longer than the length of the fourth coil 36 of the second output transformer 32. Therefore, the magnetic flux φ2 from the fourth coil 36 of the second output transformer 32 can be further interrupted (refer to...). Figure 2 Therefore, it can further reduce the degradation of characteristics.

[0088] In addition, such as Figure 2 As shown, substrate 7 includes a plurality of thermal vias 73 (two in the example). The plurality of thermal vias 73 include a first thermal via 73A and a second thermal via 73B. The first thermal via 73A is electrically connected to a first amplifying component 21 and is configured to overlap with the first amplifying component 21 when viewed from the thickness direction D1 of substrate 7. The second thermal via 73B is electrically connected to a second amplifying component 31 and is configured to overlap with the second amplifying component 31 when viewed from the thickness direction D1 of substrate 7.

[0089] In the second direction D22, the width of the first heat-perforation hole 73A is wider than the width W11 of the second coil 26 of the first output transformer 22. In other words, in the second direction D22, the length of the first heat-perforation hole 73A is longer than the length of the second coil 26 of the first output transformer 22. As a result, the winding of the magnetic flux φ1 from the first output transformer 22 into the second output transformer 32 side can also be reduced within the substrate 7 through the first heat-perforation hole 73A, thereby further reducing the degradation of characteristics.

[0090] Similarly, in the second direction D22, the width of the second heat-perforation hole 73B is wider than the width W12 of the fourth coil 36 of the second output transformer 32. In other words, in the second direction D22, the length of the second heat-perforation hole 73B is longer than the length of the fourth coil 36 of the second output transformer 32. As a result, the winding of the magnetic flux φ2 from the second output transformer 32 into the first output transformer 22 side can also be reduced within the substrate 7 through the second heat-perforation hole 73B, thus further reducing the degradation of characteristics.

[0091] As described above, when viewed from the thickness direction D1 of the substrate 7, the winding directions of the first output transformer 22 and the second output transformer 32 are different from each other.

[0092] This reduces the influence of the magnetic flux φ1 from the first output transformer 22 in the second output transformer 32. Similarly, it reduces the influence of the magnetic flux φ2 from the second output transformer 32 in the first output transformer 22.

[0093] In addition, such as Figure 1 and Figure 2 As shown, when viewed from above along the thickness direction D1 of the substrate 7, the first output transformer 22, the first amplification component 21, the second amplification component 31, and the second output transformer 32 are arranged in this order. More specifically, along a first direction D21 orthogonal to the thickness direction D1 of the substrate 7, the first output transformer 22, the first amplification component 21, the second amplification component 31, and the second output transformer 32 are arranged in this order.

[0094] This allows the first output transformer 22 to be separated from the second output transformer 32, thereby further reducing the influence of the magnetic flux φ1 from the first output transformer 22 in the second output transformer 32. Similarly, it further reduces the influence of the magnetic flux φ2 from the second output transformer 32 in the first output transformer 22.

[0095] Furthermore, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 (first elongated bump 8A) does not overlap with the center portion of the first output transformer 22. Also, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 (second elongated bump 8B) does not overlap with the center portion of the second output transformer 32. And, in Figure 1 In the example, when viewed from the thickness direction D1 of the substrate 7, the first elongated bump 8A does not overlap with the center of the first magnifying component 21. When viewed from the thickness direction D1 of the substrate 7, the second elongated bump 8B does not overlap with the center of the second magnifying component 31.

[0096] (5) Example of high-frequency module operation

[0097] Below, refer to Figure 5 This will explain the operation of the high-frequency module 1 when simultaneous communication is being performed.

[0098] In the case of simultaneous communication, switch 6 connects the first antenna terminal 51 to the first transmitting filter 41 and the second antenna terminal 52 to the second transmitting filter 42. That is, switch 6 selects the selection terminal 63 as the connection destination of the common terminal 61 and the selection terminal 64 as the connection destination of the common terminal 62.

[0099] The first transmit signal output from the signal processing circuit 92 is transmitted from the first antenna 911 via the first power amplifier circuit 2 and the first transmit filter 41. The second transmit signal output from the signal processing circuit 92 is transmitted from the second antenna 912 via the second power amplifier circuit 3 and the second transmit filter 42.

[0100] (6) Effect

[0101] In the high-frequency module 1 according to Embodiment 1, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 is located between the first output transformer 22 and the second output transformer 32. Therefore, the elongated bump 8 reduces the winding of magnetic flux φ1 from the first output transformer 22 towards the second output transformer 32, thus reducing characteristic degradation. Similarly, the elongated bump 8 reduces the winding of magnetic flux φ2 from the second output transformer 32 towards the first output transformer 22, thus reducing characteristic degradation.

[0102] In the high-frequency module 1 according to Embodiment 1, the width W21 of the elongated bump 8 (first elongated bump 8A) is wider than the width W11 of the second coil 26 of the first output transformer 22. This further reduces the winding of magnetic flux φ1 from the second coil 26 of the first output transformer 22 towards the second output transformer 32, thus further reducing characteristic degradation. Similarly, the width W22 of the elongated bump 8 (second elongated bump 8B) is wider than the width W12 of the fourth coil 36 of the second output transformer 32. This further reduces the winding of magnetic flux φ2 from the fourth coil 36 of the second output transformer 32 towards the first output transformer 22, thus further reducing characteristic degradation.

[0103] In the high-frequency module 1 according to Embodiment 1, the width of the heat-perforated hole 73 (first heat-perforated hole 73A) on the substrate 7 is wider than the width W11 of the second coil 26 of the first output transformer 22. Therefore, the heat-perforated hole 73 reduces the winding of magnetic flux φ1 from the first output transformer 22 into the second output transformer 32 side within the substrate 7, thus further reducing characteristic degradation. Similarly, the width of the heat-perforated hole 73 (second heat-perforated hole 73B) on the substrate 7 is wider than the width W12 of the fourth coil 36 of the second output transformer 32. Therefore, the heat-perforated hole 73 reduces the winding of magnetic flux φ2 from the second output transformer 32 into the first output transformer 22 side within the substrate 7, thus further reducing characteristic degradation.

[0104] In the high-frequency module 1 according to Embodiment 1, when viewed from the thickness direction D1 of the substrate 7, the winding directions of the first output transformer 22 and the second output transformer 32 are different from each other. This reduces the influence of the magnetic flux φ1 from the first output transformer 22 in the second output transformer 32. Similarly, it reduces the influence of the magnetic flux φ2 from the second output transformer 32 in the first output transformer 22.

[0105] In the high-frequency module 1 according to Embodiment 1, when viewed from the thickness direction D1 of the substrate 7, the first output transformer 22, the first amplification component 21, the second amplification component 31, and the second output transformer 32 are arranged in this order. This allows the first output transformer 22 and the second output transformer 32 to be separated, thereby further reducing the influence of the magnetic flux φ1 from the first output transformer 22 in the second output transformer 32. Similarly, the influence of the magnetic flux φ2 from the second output transformer 32 in the first output transformer 22 can be further reduced.

[0106] (7) Variation

[0107] The following describes a variation of Implementation 1.

[0108] As a variation of Embodiment 1, when viewed from above in the thickness direction D1 of the substrate 7, the winding directions of the first output transformer 22 and the second output transformer 32 may also be the same.

[0109] Regarding the high-frequency module 1 involved in the modified example, when viewed from above in the thickness direction D1 of the substrate 7, the winding directions of the first output transformer 22 and the second output transformer 32 are the same. As a result, the effect of reducing the winding of magnetic flux (magnetic flux φ1 from the first output transformer 22 and magnetic flux φ2 from the second output transformer 32) by means of the elongated bump 8 is further improved.

[0110] In the high-frequency module 1 involved in the above-described modification, it also performs the same effect as the high-frequency module 1 involved in embodiment 1.

[0111] (Implementation Method 2)

[0112] like Figure 7 As shown, the high-frequency module 1 involved in Embodiment 2 and the high-frequency module 1 involved in Embodiment 1 (refer to...) Figure 4 The difference is that the second power amplifier circuit 3 is a Dougherty amplifier circuit.

[0113] (1) Structure

[0114] like Figure 6 and Figure 7 As shown, the high-frequency module 1 according to Embodiment 2 includes a first power amplifier circuit 2 and a second power amplifier circuit 3. Furthermore, regarding the high-frequency module 1 according to Embodiment 2, the same reference numerals are used for structural elements identical to those in the high-frequency module 1 according to Embodiment 1, and descriptions are omitted.

[0115] The second power amplifier circuit 3 in Embodiment 2 is a Dougherty amplifier circuit. The second power amplifier circuit 3 includes a second amplification component 31 and multiple (two in the example) second output transformers 32a and 32b.

[0116] The second amplification component 31 has multiple third amplification elements 33a and 33b and multiple fourth amplification elements 34a and 34b. The second output transformer 32a has a third coil 35a and a fourth coil 36a. The second output transformer 32b has a third coil 35b and a fourth coil 36b.

[0117] (2) Action

[0118] Next, refer to Figure 6 and Figure 7 To illustrate the operation of the high-frequency module 1 involved in Implementation Method 2.

[0119] (2.1) First action

[0120] During the first operation of the high-frequency module 1, all three amplifying elements 33a and 33b, and the four amplifying elements 34a and 34b, are activated. At this time, the power levels of the second transmitted signal (non-inverting input signal) input to the third amplifying element 33b and the second transmitted signal (inverting input signal) input to the fourth amplifying element 34b are at or above the reference power level. That is, when the power level of the second transmitted signal input to the third amplifying element 33b is at or above the reference power level, the third amplifying element 33b amplifies the second transmitted signal and outputs it. Similarly, when the power level of the second transmitted signal input to the fourth amplifying element 34b is at or above the reference power level, the fourth amplifying element 34b amplifies the second transmitted signal and outputs it. On the other hand, the third amplifying element 33a amplifies and outputs the second transmitted signal regardless of the power level of the second transmitted signal (non-inverting input signal) input to it. Similarly, the fourth amplifying element 34a amplifies and outputs the second transmitted signal regardless of the power level of the second transmitted signal (inverting input signal) input to it.

[0121] Here, the phase of the second transmitted signal (non-inverting input signal) output from the third amplifying element 33b is opposite to the phase of the second transmitted signal (inverting input signal) output from the fourth amplifying element 34b. Furthermore, the phase of the second transmitted signal (non-inverting input signal) output from the third amplifying element 33a is opposite to the phase of the second transmitted signal (inverting input signal) output from the fourth amplifying element 34a. Therefore, the primary voltage applied to the third coil 35a of the second output transformer 32a and the primary voltage applied to the third coil 35b of the second output transformer 32b are twice the voltage of the second transmitted signal.

[0122] Therefore, the secondary voltage applied to the fourth coil 36a of the second output transformer 32a is the product of the primary voltage applied to the third coil 35a and the turns ratio of the second output transformer 32a. The secondary voltage applied to the fourth coil 36b of the second output transformer 32b is the product of the primary voltage applied to the third coil 35b and the turns ratio of the second output transformer 32b.

[0123] (2.2) Second action

[0124] During the second operation of the high-frequency module 1, the input power to the third amplifying element 33b and the fourth amplifying element 34b decreases, and the output power of the third amplifying element 33b and the fourth amplifying element 34b approaches zero. In the high-frequency module 1 according to Embodiment 2, a λ / 4 line is provided in the signal path connected to the third amplifying element 33b, and a λ / 4 line is provided in the signal path connected to the fourth amplifying element 34b. Therefore, the two ends of the third coil 35b of the second output transformer 32b are short-circuited. At this time, since the impedance of the third amplifying element 33b is always high, the third amplifying element 33b is disconnected from the signal path. In addition, since the impedance of the fourth amplifying element 34b is always high, the fourth amplifying element 34b is disconnected from the signal path.

[0125] At this time, the primary voltage applied to the third coil 35a of the second output transformer 32a is twice the voltage of the second transmitted signal.

[0126] Therefore, the secondary voltage applied to the fourth coil 36a of the second output transformer 32a is the product of the primary voltage applied to the third coil 35a and the turns ratio of the second output transformer 32a.

[0127] During the second operation, the impedance of the third amplifying element 33a is twice that during the first operation. Furthermore, the impedance of the fourth amplifying element 34a during the second operation is twice that of the fourth amplifying element 34b during the first operation. Therefore, during the second operation, the amplification efficiency of the high-frequency module 1 can be improved compared to the first operation. That is, according to Embodiment 2, the high-frequency module 1 can suppress the decrease in amplification efficiency.

[0128] (3) Effect

[0129] In the high-frequency module 1 according to embodiment 2, the second power amplifier circuit 3 is a Dougherty amplifier circuit. Therefore, even in a Dougherty amplifier circuit, the degradation of characteristics can be reduced.

[0130] (Implementation Method 3)

[0131] like Figure 8As shown, the high-frequency module 1 involved in Embodiment 3 and the high-frequency module 1 involved in Embodiment 2 (refer to...) Figure 6 The difference is that both the first power amplifier circuit 2 and the second power amplifier circuit 3 are Dougherty circuits.

[0132] (1) Structure

[0133] like Figure 8 As shown, the high-frequency module 1 according to Embodiment 3 includes a first power amplifier circuit 2 and a second power amplifier circuit 3. Furthermore, regarding the high-frequency module 1 according to Embodiment 3, the same reference numerals are used for structural elements identical to those in the high-frequency module 1 according to Embodiment 2, and descriptions are omitted.

[0134] The first power amplifier circuit 2 in Embodiment 3 is a Dougherty amplifier circuit. The first power amplifier circuit 2 includes a first amplification component 21 and a plurality of (two in the example) first output transformers 22a and 22b.

[0135] The first amplifying component 21 has a plurality of first amplifying elements 23 and a plurality of second amplifying elements 24 (see reference). Figure 7 The first output transformer 22a has a first coil 25 (refer to...). Figure 2 The first output transformer 22b has a first coil 25 (refer to) and a second coil 26a. Figure 2 ) and the second coil 26b.

[0136] (2) Effect

[0137] In the high-frequency module 1 according to embodiment 3, the first power amplifier circuit 2 and the second power amplifier circuit 3 are Dougherty amplifier circuits. Therefore, even in the Dougherty amplifier circuit, the degradation of characteristics can be reduced.

[0138] (Implementation Method 4)

[0139] like Figure 9 As shown, the high-frequency module 1 involved in Embodiment 4 and the high-frequency module 1 involved in Embodiment 1 (refer to...) Figure 1 The difference is that each of the multiple long strip bumps 8 is a single bump.

[0140] (1) Structure

[0141] like Figure 9 As shown, the high-frequency module 1 according to Embodiment 4 includes a first power amplifier circuit 2, a second power amplifier circuit 3, a substrate 7, and a plurality of (two in the example) elongated protrusions 8. Furthermore, regarding the high-frequency module 1 according to Embodiment 4, the same reference numerals are used for structural elements identical to those in the high-frequency module 1 according to Embodiment 1, and descriptions are omitted.

[0142] In Embodiment 4, each of the plurality of elongated protrusions 8 is composed of one protrusion. Furthermore, regarding the elongated protrusions 8 of Embodiment 4, compared to the elongated protrusions 8 of Embodiment 1 (see...),... Figure 1 Explanation of identical structures and functions is omitted.

[0143] (2) Effect

[0144] In the high-frequency module 1 according to Embodiment 4, similarly to Embodiment 1, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 is located between the first output transformer 22 and the second output transformer 32. Therefore, the elongated bump 8 reduces the ingress of magnetic flux from the first output transformer 22, thus reducing characteristic degradation. Similarly, the elongated bump 8 reduces the ingress of magnetic flux from the second output transformer 32, thus reducing characteristic degradation.

[0145] (Implementation Method 5)

[0146] like Figure 10 As shown, the high-frequency module 1 involved in Embodiment 5 and the high-frequency module 1 involved in Embodiment 1 (refer to...) Figure 1 The difference is that the gap 80A of the first long strip protrusion 8A is staggered with the gap 80B of the second long strip protrusion 8B.

[0147] (1) Structure

[0148] like Figure 10 As shown, the high-frequency module 1 according to Embodiment 5 includes a first power amplifier circuit 2, a second power amplifier circuit 3, a substrate 7, and a plurality of (two in the example) elongated protrusions 8. Furthermore, regarding the high-frequency module 1 according to Embodiment 5, the same reference numerals are used for structural elements identical to those in the high-frequency module 1 according to Embodiment 1, and descriptions are omitted.

[0149] In embodiment 5, the gap 80A of the first elongated protrusion 8A is offset from the gap 80B of the second elongated protrusion 8B. In other words, in the first direction D21, the gap 80A of the first elongated protrusion 8A and the gap 80B of the second elongated protrusion 8B are not aligned in a straight line. Furthermore, regarding the elongated protrusion 8 of embodiment 5, compared with the elongated protrusion 8 of embodiment 1 (see...), Figure 1 Explanation of identical structures and functions is omitted.

[0150] In Embodiment 5, the centers of the first output transformer 22 and the second output transformer 32 are not aligned in a straight line along the first direction D21. Furthermore, regarding the first power amplifier circuit 2 and the second power amplifier circuit 3 in Embodiment 5, compared to the first power amplifier circuit 2 and the second power amplifier circuit 3 in Embodiment 1 (see...),... Figure 1Explanation of identical structures and functions is omitted.

[0151] (2) Effect

[0152] In the high-frequency module 1 according to Embodiment 5, similarly to Embodiment 1, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 is located between the first output transformer 22 and the second output transformer 32. Therefore, the elongated bump 8 reduces the winding of magnetic flux from the first output transformer 22, thus reducing characteristic degradation. Similarly, the elongated bump 8 reduces the winding of magnetic flux from the second output transformer 32, thus reducing characteristic degradation.

[0153] (Implementation Method 6)

[0154] like Figure 11 As shown, the high-frequency module 1 involved in Embodiment 6 and the high-frequency module involved in Embodiment 1 (refer to...) Figure 1 The difference is that the input terminal 28 of the first amplifying component 21 and the input terminal 38 of the second amplifying component 31 are positioned between the first elongated protrusion 8A and the second elongated protrusion 8B.

[0155] (1) Structure

[0156] like Figure 11 As shown, the high-frequency module 1 according to Embodiment 6 includes a first power amplifier circuit 2, a second power amplifier circuit 3, a substrate 7, and a plurality of (two in the example) elongated protrusions 8. Furthermore, regarding the high-frequency module 1 according to Embodiment 6, the same reference numerals are used for structural elements identical to those in the high-frequency module 1 according to Embodiment 1, and descriptions are omitted.

[0157] The first power amplifier circuit 2 includes a first amplification component 21 and a first output transformer 22. In embodiment 6, the input terminal 28 of the first amplification component 21 is located on the opposite side of the first output transformer 22 in the first direction D21, separated by a first elongated protrusion 8A. In other words, when viewed from the thickness direction D1 of the substrate 7, the first elongated protrusion 8A is located between the input terminal 28 of the first amplification component 21 and the first output transformer 22. Furthermore, regarding the first power amplifier circuit 2 of embodiment 6, compared with the first power amplifier circuit 2 of embodiment 1 (see...), Figure 1 Explanation of identical structures and functions is omitted.

[0158] The second power amplifier circuit 3 includes a second amplification component 31 and a second output transformer 32. In embodiment 6, the input terminal 38 of the second amplification component 31 is located on the opposite side of the second output transformer 32 in the first direction D21, separated by a second elongated bump 8B. In other words, when viewed from the thickness direction D1 of the substrate 7, the second elongated bump 8B is located between the input terminal 38 of the second amplification component 31 and the second output transformer 32. Furthermore, regarding the second power amplifier circuit 3 of embodiment 6, compared with the second power amplifier circuit 3 of embodiment 1 (see...), Figure 1 Explanation of identical structures and functions is omitted.

[0159] (2) Effect

[0160] In the high-frequency module 1 according to Embodiment 6, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 (first elongated bump 8A) is located between the input terminal 28 of the first amplification component 21 and the first output transformer 22. This reduces the influence of the first transmitted signal at the input terminal 28 of the first amplification component 21. Similarly, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 (second elongated bump 8B) is located between the input terminal 38 of the second amplification component 31 and the second output transformer 32. This reduces the influence of the second transmitted signal at the input terminal 38 of the second amplification component 31.

[0161] (Implementation Method 7)

[0162] The high-frequency module 1 involved in Embodiment 7 and the high-frequency module 1 involved in Embodiment 6 (see reference) Figure 11 The difference lies in having, for example Figure 12 The multiple elongated protrusions 8 shown.

[0163] (1) Structure

[0164] like Figure 12 As shown, the high-frequency module 1 according to Embodiment 7 includes a first power amplifier circuit 2, a second power amplifier circuit 3, a substrate 7, and a plurality of (two in the example) elongated protrusions 8. Furthermore, regarding the high-frequency module 1 according to Embodiment 7, the same reference numerals are used for structural elements identical to those in the high-frequency module 1 according to Embodiment 6, and descriptions are omitted.

[0165] The plurality of elongated protrusions 8 include a first elongated protrusion 8A and a second elongated protrusion 8B. Furthermore, regarding the elongated protrusion 8 of embodiment 7, compared with the elongated protrusion 8 of embodiment 6 (see...) Figure 11 Explanation of identical structures and functions is omitted.

[0166] The first elongated protrusion 8A includes four protrusions 81A to 84A. Two protrusions 81A and 82A are arranged along the second direction D22. Each of the two protrusions 81A and 82A is configured with its long side along the second direction D22. Two protrusions 83A and 84A are configured with their long sides along the first direction D21. The first elongated protrusion 8A has gaps 80A, 85A, and 86A. Gap 80A is located between protrusions 81A and 82A in the second direction D22. Gap 85A is located between protrusions 81A and 83A in the first direction D21. Gap 86A is located between protrusions 82A and 84A in the first direction D21.

[0167] The second elongated protrusion 8B includes four protrusions 81B to 84B. Two protrusions 81B and 82B are arranged along the second direction D22. Each of the two protrusions 81B and 82B is configured with its long side along the second direction D22. Two protrusions 83B and 84B are configured with their long sides along the first direction D21. The second elongated protrusion 8B has gaps 80B, 85B, and 86B. Gap 80B is located between protrusions 81B and 82B in the second direction D22. Gap 85B is located between protrusions 81B and 83B in the first direction D21. Gap 86B is located between protrusions 82B and 84B in the first direction D21.

[0168] The input terminal 28 of the first amplification component 21 is surrounded on three sides by four bumps 81A to 84A. More specifically, in the first direction D21, bumps 81A and 82A are arranged between the input terminal 28 of the first amplification component 21 and the first output transformer 22. In addition, in the second direction D22, the input terminal 28 of the first amplification component 21 is arranged between bumps 83A and 84A.

[0169] The input terminal 38 of the second amplification component 31 is surrounded on three sides by four bumps 81B to 84B. More specifically, in the first direction D21, bumps 81B and 82B are arranged between the input terminal 38 of the second amplification component 31 and the second output transformer 32. In addition, in the second direction D22, the input terminal 38 of the second amplification component 31 is arranged between bumps 83B and 84B.

[0170] (2) Effect

[0171] In the high-frequency module 1 according to Embodiment 7, similarly to Embodiment 6, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 (first elongated bump 8A) is located between the input terminal 28 of the first amplification component 21 and the first output transformer 22. This reduces the influence of the first transmitted signal at the input terminal 28 of the first amplification component 21. Similarly, similarly to Embodiment 6, when viewed from the thickness direction D1 of the substrate 7, the elongated bump 8 (second elongated bump 8B) is located between the input terminal 38 of the second amplification component 31 and the second output transformer 32. This reduces the influence of the second transmitted signal at the input terminal 38 of the second amplification component 31.

[0172] The embodiments and modifications described above are merely a part of the various embodiments and modifications of the present invention. Furthermore, any embodiments and modifications can be made as long as they achieve the objectives of the present invention, and various changes can be made according to design, etc.

[0173] In this specification, "feature disposed on the first main surface of the substrate" includes not only the case where the feature is directly mounted on the first main surface of the substrate, but also the case where the feature is disposed in the space on the first main surface side, which is separated from the substrate by the space on the first main surface side and the space on the second main surface side. In other words, "feature disposed on the first main surface of the substrate" includes the case where the feature is mounted on the first main surface of the substrate via other circuit elements or electrodes, etc. The feature may be, for example, the first amplifying component 21 and the second amplifying component 31, but is not limited to the first amplifying component 21 and the second amplifying component 31.

[0174] In this specification, "when viewed from the thickness direction of the substrate, the first element and the second element overlap" includes the following situations: when viewed from the thickness direction of the substrate, the entire first element overlaps the entire second element, the entire first element overlaps a portion of the second element, a portion of the first element overlaps the entire second element, and a portion of the first element overlaps a portion of the second element. In short, "when viewed from the thickness direction of the substrate, the first element and the second element overlap" means the situation where "at least a portion of the first element overlaps at least a portion of the second element."

[0175] In this specification, "a third element is disposed between the first element and the second element when viewed from the thickness direction of the substrate" means that, when viewed from the thickness direction of the substrate, at least one of a plurality of line segments connecting any point in the first element and any point in the second element passes through the area of ​​the third element. Furthermore, "viewing from the thickness direction of the substrate" refers to observing the substrate and the electronic components mounted on the substrate by projecting them orthographically onto a plane parallel to the main surface of the substrate.

[0176] (Way)

[0177] The following methods are disclosed in this specification.

[0178] The high-frequency module (1) involved in the first method includes a first power amplifier circuit (2), a second power amplifier circuit (3), and a substrate (7). The first power amplifier circuit (2) amplifies a first transmission signal in the transmission band of a first communication frequency band. The second power amplifier circuit (3) amplifies a second transmission signal in the transmission band of a second communication frequency band. The substrate (7) has a main surface (first main surface 71). The first power amplifier circuit (2) includes a first amplification component (21) and a first transformer (first output transformer 22; 22a, 22b). The first amplification component (21) has a first amplification element (23) and a second amplification element (24). The first transformer has a first coil (25) and a second coil (26; 26a, 26b). The first end (251) of the first coil (25) is connected to the output terminal (232) of the first amplification element (23). The second end (252) of the first coil (25) is connected to the output terminal (242) of the second amplification element (24). The second coil (26; 26a, 26b) is connected to the output terminal (27) of the first power amplifier circuit (2). The second power amplifier circuit (3) includes a second amplification component (31) and a second transformer (second output transformer 32; 32a, 32b). The second amplification component (31) has a third amplification element (33; 33a, 33b) and a fourth amplification element (34; 34a, 34b). The second transformer has a third coil (35; 35a, 35b) and a fourth coil (36; 36a, 36b). The first end (351) of the third coil (35; 35a, 35b) is connected to the output terminal (332) of the third amplification element (33; 33a, 33b). The second end (352) of the third coil (35; 35a, 35b) is connected to the output terminal (342) of the fourth amplification element (34; 34a, 34b). The fourth coil (36; 36a, 36b) is connected to the output terminal (37) of the second power amplifier circuit (3). The high-frequency module (1) also has an elongated bump (8) disposed on a main surface of the substrate (7). The first amplification component (21) is disposed on a main surface of the substrate (7) via the elongated bump (8). When viewed from the thickness direction (D1) of the substrate (7), the elongated bump (8) is located between the first transformer and the second transformer.

[0179] According to the high-frequency module (1) involved in the first method, the magnetic flux (φ1) from the first transformer (first output transformer 22; 22a, 22b) can be reduced to the second transformer (second output transformer 32; 32a, 32b) side by means of the long strip bump (8), thus reducing the degradation of characteristics.

[0180] The high-frequency module (1) involved in the second method is based on the first method, and the width (W21) of the long strip bump (8) is wider than the width (W11) of the second coil (26; 26a, 26b) of the first transformer (first output transformer 22; 22a, 22b).

[0181] According to the high-frequency module (1) involved in the second method, the magnetic flux (φ1) from the second coil (26; 26a, 26b) of the first transformer (first output transformer 22; 22a, 22b) can be further cut off, thus further reducing the degradation of characteristics.

[0182] The high-frequency module (1) involved in the third method is based on the first or second method, and the substrate (7) includes a heat-perforated hole (73). The width of the heat-perforated hole (73) is wider than the width (W11) of the second coil (26; 26a, 26b) of the first transformer (first output transformer 22; 22a, 22b).

[0183] According to the high-frequency module (1) involved in the third method, the magnetic flux (φ1) from the first transformer (first output transformer 22; 22a, 22b) can also be reduced to the second transformer (second output transformer 32; 32a, 32b) side through the heat-through hole (73) in the substrate (7), so the degradation of the characteristics can be further reduced.

[0184] The high-frequency module (1) involved in the fourth method is based on any of the first to third methods. When viewed from the thickness direction (D1) of the substrate (7), the winding directions of the first transformer (first output transformer 22; 22a; 22b) and the second transformer (second output transformer 32; 32a; 32b) are different from each other.

[0185] According to the high-frequency module (1) involved in the fourth method, the influence of the magnetic flux (φ1) from the first transformer (first output transformer 22; 22a; 22b) in the second transformer (second output transformer 32a; 32b) can be reduced.

[0186] The high-frequency module (1) involved in the fifth method is based on any one of the first to third methods. When viewed from the thickness direction (D1) of the substrate (7), the winding directions of the first transformer (first output transformer 22a; 22b) and the second transformer (second output transformer 32b; 32a) are the same.

[0187] According to the high-frequency module (1) involved in the fifth method, the effect of reducing the winding of magnetic flux (φ1) by the long strip bump (8) is further improved.

[0188] The high-frequency module (1) involved in the sixth method is based on any one of the first to fifth methods, and the long strip bump (8) includes multiple bumps (81A, 82A).

[0189] The high-frequency module (1) involved in the seventh method is based on the sixth method, and when viewed from the thickness direction (D1) of the substrate (7), the elongated protrusion (8) does not overlap with the center of the first transformer (first output transformer 22).

[0190] The high-frequency module (1) involved in the eighth method is based on any one of the first to seventh methods, and the first amplification component (21) has an input terminal (28). When viewed from the thickness direction (D1) of the substrate (7), the elongated protrusion (8) is located between the input terminal (28) of the first amplification component (21) and the first transformer (first output transformer 22).

[0191] According to the high-frequency module (1) involved in the eighth method, the influence of at least one of the first and second transmitted signals on the input terminal (28) of the first amplification component (21) can be reduced.

[0192] The high-frequency module (1) involved in the ninth method is based on any one of the first to eighth methods, and the second power amplifier circuit (3) is a Dougherty amplifier circuit.

[0193] According to the high-frequency module (1) involved in the ninth method, even in the Dougherty amplifier circuit, the degradation of characteristics can be reduced.

[0194] The high-frequency module (1) involved in the tenth method is based on any one of the first to ninth methods. When viewed from the thickness direction (D1) of the substrate (7), the first transformer (first output transformer 22; 22a; 22b), the first amplification component (21), the second amplification component (31), and the second transformer (second output transformer 32; 32a; 32b) are arranged in this order.

[0195] According to the high-frequency module (1) involved in the tenth method, the first transformer (first output transformer 22; 22a; 22b) and the second transformer (second output transformer 32; 32a; 32b) can be separated, thus further reducing the influence of the magnetic flux (φ1) from the first transformer in the second transformer.

[0196] The high-frequency module (1) involved in the eleventh method is based on any one of the first to tenth methods and can simultaneously utilize the transmission of the first communication frequency band and the transmission of the second communication frequency band.

[0197] The communication device (9) involved in the twelfth method includes a high-frequency module (1) and a signal processing circuit (92) of any one of the first to eleventh methods. The signal processing circuit (92) processes the signal of the high-frequency module (1).

[0198] According to the communication device (9) involved in the twelfth method, in the high-frequency module (1), the magnetic flux (φ1) from the first transformer (first output transformer 22; 22a, 22b) can be reduced to the second transformer (second output transformer 32; 32a, 32b) side by means of the long strip protrusion (8), so that the degradation of the characteristics can be reduced.

[0199] Explanation of reference numerals in the attached figures

[0200] 1: High-frequency module; 2: First power amplifier circuit; 21: First amplification component; 22, 22a, 22b: First output transformer (first transformer); 23: First amplification element; 231: Input terminal; 232: Output terminal; 24: Second amplification element; 241: Input terminal; 242: Output terminal; 25: First coil; 251: First terminal; 252: Second terminal; 26, 26a, 26b: Second coil; 261: First terminal; 262: Second terminal; 27: Output terminal 28: Input terminal; 3: Second power amplifier circuit; 31: Second amplification component; 32, 32a, 32b: Second output transformer (second transformer); 33, 33a, 33b: Third amplification element; 331: Input terminal; 332: Output terminal; 34, 34a, 34b: Fourth amplification element; 341: Input terminal; 342: Output terminal; 35, 35a, 35b: Third coil; 351: First terminal; 352: Second terminal; 36, 36a, 36b: ... Four coils; 361: First terminal; 362: Second terminal; 37: Output terminal; 38: Input terminal; 41: First transmit filter; 42: Second transmit filter; 5: Antenna terminal; 51: First antenna terminal; 52: Second antenna terminal; 6: Switch; 61, 62: Common terminal; 63, 64: Select terminal; 7: Substrate; 71: First main surface (one main surface); 72: Second main surface; 73: Heat port; 73A: First heat port; 73B: Second heat port; 8: Long strip protrusion ; 8A: First elongated protrusion; 8B: Second elongated protrusion; 80A, 80B: Gap; 81A~84A, 81B~84B: Protrusion; 9: Communication device; 91: Antenna; 911: First antenna; 912: Second antenna; 92: Signal processing circuit; 93: Baseband signal processing circuit; 94: RF signal processing circuit; W11, W12: Width; W21, W22: Width; φ1, φ2: Magnetic flux; D1: Thickness direction; D21: First direction; D22: Second direction.

Claims

1. A high-frequency module, comprising: The first power amplifier circuit amplifies the first transmitted signal in the transmission band of the first communication frequency band; The second power amplifier circuit amplifies the second transmitted signal in the transmission band of the second communication frequency band; as well as The substrate has a main surface. in, The first power amplifier circuit includes: A first amplifying component, having a first amplifying element and a second amplifying element; and The first transformer has a first coil and a second coil. The first end of the first coil is connected to the output terminal of the first amplifying element. The second end of the first coil is connected to the output terminal of the second amplifying element. The second coil is connected to the output terminal of the first power amplifier circuit. The second power amplifier circuit includes: The second amplifying component has a third amplifying element and a fourth amplifying element; and The second transformer has a third and a fourth coil. The first end of the third coil is connected to the output terminal of the third amplifying element. The second end of the third coil is connected to the output terminal of the fourth amplifying element. The fourth coil is connected to the output terminal of the second power amplifier circuit. The high-frequency module also includes an elongated protrusion disposed on one of the main surfaces of the substrate. The first amplifying component is disposed on one of the main surfaces of the substrate via the elongated protrusion. When viewed from the thickness direction of the substrate, the elongated protrusion is located between the first transformer and the second transformer.

2. The high-frequency module according to claim 1, wherein, The width of the elongated protrusion is wider than the width of the second coil of the first transformer.

3. The high-frequency module according to claim 1 or 2, wherein, The substrate includes thermal vias. The width of the heat-perforated hole is wider than the width of the second coil of the first transformer.

4. The high-frequency module according to claim 1 or 2, wherein, When viewed from the thickness direction of the substrate, the first transformer and the second transformer have different winding directions relative to each other.

5. The high-frequency module according to claim 1 or 2, wherein, When viewed from the thickness direction of the substrate, the winding directions of the first transformer and the second transformer are the same.

6. The high-frequency module according to claim 1 or 2, wherein, The elongated bump includes multiple bumps.

7. The high-frequency module according to claim 6, wherein, When viewed from the thickness direction of the substrate, the elongated protrusion does not overlap with the center of the first transformer.

8. The high-frequency module according to claim 1 or 2, wherein, The first amplification component has an input terminal. When viewed from the thickness direction of the substrate, the elongated bump is located between the input terminal of the first amplification component and the first transformer.

9. The high-frequency module according to claim 1 or 2, wherein, The second power amplifier circuit is a Dougherty amplifier circuit.

10. The high-frequency module according to claim 1 or 2, wherein, When viewed from the thickness direction of the substrate, the first transformer, the first amplification component, the second amplification component, and the second transformer are arranged in this order.

11. The high-frequency module according to claim 1 or 2, wherein, It can simultaneously utilize the transmission of the first communication frequency band and the transmission of the second communication frequency band.

12. A communication device comprising: The high-frequency module according to any one of claims 1 to 11; and The signal processing circuit processes the signals from the high-frequency module.

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