Phase shifter and communication device

Abstract

The application provides a phase shifter and a communication device, and belongs to the technical field of communication. In the scheme provided by the application, at least one of the first reflection load and the second reflection load in the phase shifter is a target reflection load, and the material of the target reflection load comprises vanadium dioxide. Since the feeding structure in the phase shifter can load voltage to the target reflection load, the phase change of vanadium dioxide in the target reflection load can be caused, and the reflection coefficient of the target reflection load is adjusted. Therefore, the phase shift amount of the phase shifter can be flexibly adjusted, and the use flexibility of the phase shifter is effectively improved.

Description

Technical Field

[0001] This application relates to the field of communication technology, and in particular to a phase shifter and communication device. Background Technology

[0002] A phase shifter is a device used in the field of communications to adjust the phase of a signal. The most commonly used phase shifters in related technologies are reflective phase shifters, which shift the phase of a signal by reflecting it.

[0003] However, the reflective phase shifter in the related technology can only produce a fixed phase shift of the signal, that is, the phase shift amount of the reflective phase shifter is fixed, and its use flexibility is poor. Summary of the Invention

[0004] This application provides a phase shifter and a communication device, which can solve the technical problem of poor flexibility in the use of phase shifters in related technologies.

[0005] In a first aspect, a phase shifter is provided, comprising: a microstrip line bridge, a first reflective load, a second reflective load, and a feeding structure. The microstrip line bridge has an input terminal, a through terminal, a coupling terminal, and an output terminal. The input terminal receives an input signal, the through terminal is connected to the first reflective load, the coupling terminal is connected to the second reflective load, and the output terminal outputs a signal. At least one of the first and second reflective loads is a target reflective load, the target reflective load being made of vanadium dioxide, and the target reflective load is connected to the feeding structure. The feeding structure applies a voltage to the target reflective load to adjust its reflection coefficient.

[0006] Since the target reflective load is made of vanadium dioxide, which exhibits electro-induced phase transition properties, the feeding structure can adjust the reflection coefficient of the target reflective load by applying a voltage to it. Based on this, the solution provided in this application enables flexible adjustment of the phase shift of the phase shifter, thereby effectively improving the flexibility of the phase shifter's use.

[0007] Optionally, the target reflective load may include: a first metal layer, a vanadium dioxide thin film, and a second metal layer. The first metal layer is connected to a microstrip line bridge and is stacked with the vanadium dioxide thin film. The second metal layer is connected to a feeding structure and is stacked with the vanadium dioxide thin film. The feeding structure can be used to apply a voltage to the second metal layer.

[0008] Since the manufacturing process of vanadium dioxide thin films is relatively simple and the cost is low, using thin film vanadium dioxide materials to form target reflective loads can effectively reduce the complexity and cost of the phase shifter manufacturing process.

[0009] Optionally, the vanadium dioxide thin film can be rectangular or circular. Since rectangular or circular thin films have simple manufacturing processes and high manufacturing precision, using rectangular or circular vanadium dioxide thin films to form the target reflective load can ensure high manufacturing precision and good performance of the phase shifter without increasing the complexity and cost of the phase shifter's manufacturing process.

[0010] Optionally, both the first and second metal layers may at least partially cover the vanadium dioxide thin film. This ensures that the voltage applied to the metal layers can effectively change the electrical parameters (e.g., relative permittivity) of the vanadium dioxide thin film, thereby achieving effective adjustment of the phase shift of the phase shifter.

[0011] Optionally, at least one of the input, through, coupled, and output terminals of the microstrip bridge can be a coupled structure. The coupled structure includes: a first microstrip line and a second microstrip line arranged at intervals, the first and second microstrip lines partially overlapping. The first and second microstrip lines can be parallel to each other.

[0012] By designing at least one of the input, through, coupled, and output terminals of a microstrip bridge as a coupled structure, the phase shifter can operate with a wider bandwidth, lower loss, and achieve large-range and high-precision phase shifting.

[0013] Optionally, both the input and output terminals of the microstrip line bridge can be coupled structures. Alternatively, both the through and coupled terminals of the microstrip line bridge can be coupled structures. This ensures that the microstrip line bridge has good broadband characteristics.

[0014] Optionally, both the first and second reflective loads can be target reflective loads. Accordingly, the feeding structure can apply voltage to the first and second reflective loads respectively, and adjust the reflection coefficients of the two reflective loads respectively, thereby effectively improving the flexibility of adjusting the phase shift of the phase shifter.

[0015] Optionally, the vanadium dioxide films in the first and second reflective loads are of the same size and shape. Since the two reflective loads have identical structures, the manufacturing process of the phase shifter can be effectively simplified, manufacturing costs reduced, and manufacturing efficiency improved.

[0016] Optionally, the feeding structure may include a feeding electrode and a ground electrode. Both the feeding electrode and the ground electrode are connected to the target reflective load.

[0017] The feed electrode is used to apply a voltage to the target reflective load (e.g., the second metal layer in the target reflective load) to create a voltage difference across the target reflective load. This voltage difference enables a phase transition in the vanadium dioxide material in the target reflective load, thereby changing the reflectivity of the target reflective load.

[0018] Optionally, the feeding electrode may include a first feeding electrode and a second feeding electrode. The first feeding electrode is connected to a first reflective load and is used to apply a first voltage to the first reflective load; the second feeding electrode is connected to a second reflective load and is used to apply a second voltage to the second reflective load.

[0019] The first voltage and the second voltage can be the same or different. Since the feed electrode can include two independent feed electrodes, and each of the two feed electrodes is connected to a reflective load, the reflection coefficient of each reflective load can be independently adjusted, thereby effectively improving the adjustment flexibility of the phase shift.

[0020] Optionally, the grounding electrode may include a first grounding sub-electrode and a second grounding sub-electrode. The first grounding sub-electrode is connected to a first reflective load, and the second grounding electrode is connected to a second reflective load.

[0021] By setting two grounding electrodes, it is easy to lay wiring on the substrate to connect the grounding electrodes to the reflective load.

[0022] Optionally, the feeding structure may further include a fan-shaped stub; the fan-shaped stub may be connected between the feeding electrode and the target reflective load.

[0023] During the operation of the phase shifter, the target reflective load receives not only the input signal (i.e., the radio frequency signal) transmitted by the microstrip line bridge, but also the voltage signal applied by the feed structure. By setting a fan-shaped stub between the feed electrode and the target reflective load, the crosstalk between the radio frequency signal and the voltage signal can be effectively reduced.

[0024] Optionally, the fan-shaped stub may include two fan-shaped sub-stubs. These two fan-shaped sub-stubs correspond one-to-one with the two reflective loads, and each fan-shaped sub-stub is used to reduce signal crosstalk in the corresponding reflective load.

[0025] Optionally, the first reflective load and the second reflective load are arranged symmetrically about the target axis; the two fan-shaped sub-branches are also arranged symmetrically about the target axis. The first reflective load and the second reflective load can both be rectangular structures, and the target axis can be parallel to the long side of the rectangular structure.

[0026] By designing both the reflective load and the fan-shaped branch in the phase shifter as symmetrical structures, the assembly of the phase shifter can be facilitated, and the fabrication efficiency of the phase shifter can be improved.

[0027] Secondly, a phase shifter is provided, comprising a microstrip line bridge, a first reflective load, and a second reflective load. The microstrip line bridge has an input terminal, a through terminal, a coupling terminal, and an output terminal. The input terminal receives an input signal, the through terminal is connected to the first reflective load, the coupling terminal is connected to the second reflective load, and the output terminal outputs a signal. At least one of the input terminal, through terminal, coupling terminal, and output terminal is a coupling structure. The coupling structure includes a first microstrip line and a second microstrip line arranged at intervals, with the first and second microstrip lines partially overlapping.

[0028] Since at least one of the input, through, coupled, and output terminals of the microstrip bridge in the phase shifter is a coupled structure, the phase shifter can operate with a wide bandwidth, low loss, and achieve large-range and high-precision phase shifting.

[0029] Thirdly, a microstrip line bridge is provided, which has an input terminal, a through terminal, a coupled terminal, and an output terminal, wherein at least one of the input terminal, through terminal, coupled terminal, and output terminal is a coupling structure. The coupling structure includes: a first microstrip line and a second microstrip line arranged at intervals, wherein the first microstrip line and the second microstrip line partially overlap.

[0030] Because at least one of the input, through, coupled, and output terminals of this microstrip bridge is a coupled structure, it has a wide operating bandwidth and low loss.

[0031] Alternatively, this microstrip line bridge can be applied not only to the phase shifters described above, but also to other signal processing devices. For example, it can also be applied to mixers, filters, or attenuators.

[0032] Fourthly, a communication device is provided, comprising: a radio frequency circuit, an antenna, and a phase shifter as provided in any of the preceding aspects. The phase shifter is used to perform phase shifting processing on radio frequency signals transmitted by the radio frequency circuit and on radio frequency signals received by the antenna.

[0033] In summary, this application provides a phase shifter and a communication device. In the solution provided by this application, at least one of the first and second reflective loads in the phase shifter is a target reflective load, and the material of the target reflective load includes vanadium dioxide. Since the feeding structure in the phase shifter can apply a voltage to the target reflective load, the vanadium dioxide can undergo a phase transition, thereby adjusting the reflection coefficient of the target reflective load. This allows for flexible adjustment of the phase shift amount of the phase shifter, effectively improving the flexibility of its use. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the structure of a communication system provided in an embodiment of this application;

[0035] Figure 2 This is a schematic diagram of the structure of a communication device provided in an embodiment of this application;

[0036] Figure 3 This is a schematic diagram of the structure of a phase shifter provided in an embodiment of this application;

[0037] Figure 4 This is a schematic diagram of another phase shifter provided in an embodiment of this application;

[0038] Figure 5 This is a cross-sectional view of a target reflective load provided in an embodiment of this application;

[0039] Figure 6 This is a top view of another target reflective load provided in an embodiment of this application;

[0040] Figure 7 This is a schematic diagram of another phase shifter provided in the embodiments of this application;

[0041] Figure 8 This is a schematic diagram of another phase shifter provided in the embodiments of this application;

[0042] Figure 9 This is a schematic diagram of a microstrip bridge structure provided in an embodiment of this application;

[0043] Figure 10 This is a schematic diagram of a coupling structure provided in an embodiment of this application;

[0044] Figure 11 This is an equivalent circuit diagram of a phase shifter provided in an embodiment of this application;

[0045] Figure 12 This is an impedance circle diagram of the load arm of a microstrip bridge provided in an embodiment of this application;

[0046] Figure 13 This is an impedance circle diagram of the load arm of another microstrip line bridge provided in the embodiments of this application;

[0047] Figure 14 This is a full-wave simulation diagram of a phase shifter provided in an embodiment of this application;

[0048] Figure 15 This is a schematic diagram illustrating the phase shift of a phase shifter as a function of voltage, provided in an embodiment of this application.

[0049] Figure 16 This is a schematic diagram of another phase shifter provided in the embodiments of this application. Detailed Implementation

[0050] The following describes in detail, with reference to the accompanying drawings, the radio frequency front-end module and its control method, and the communication equipment provided in the embodiments of this application.

[0051] Figure 1 This is a schematic diagram of the structure of a communication system provided in an embodiment of this application. For example... Figure 1 As shown, the communication system may include a base station (BS) 100 and core network equipment 200. Terminal 000 can access the network through the base station 100 and core network equipment 200. Terminal 000 can also be referred to as user equipment (UE), which can be a mobile phone, computer, wearable device, in-vehicle device, or smart home device, etc. For example, terminal 000 can be a smartphone, virtual reality (VR) glasses, holographic projection device, or intelligent robot, etc.

[0052] Base station 100 can be an access device in a mobile communication system, such as a NodeB (NB) or an evolved NodeB (eNB). Alternatively, base station 100 can be an access point (AP) in a wireless local area network (WLAN). Core network equipment 200 can be network devices such as routers or switches.

[0053] Optionally, the communication system may be a 6-generation (6G) mobile communication system, and the 6G mobile communication system may employ terahertz (THz) communication technology.

[0054] Figure 2 This is a schematic diagram of the structure of a radio frequency front-end system in a communication device according to an embodiment of this application. The communication device can be... Figure 1 The system shown includes base station 100 or terminal 000. (Reference) Figure 2 The RF front-end system may include: a phase shifter 01, a switch 02, a drive power amplifier 03, a final stage power amplifier 04, a first coupler 05, a second coupler 06, an antenna 07, a limiter 08, a filter 09, a low noise amplifier (LNA) 10, and an attenuator 11. The attenuator 11 may be an electronically controlled attenuator.

[0055] refer to Figure 2 Phase shifter 01 is connected to the radio frequency circuit in the communication equipment. Figure 2(Not shown in the diagram) and switch 02 are connected. When the communication device is in signal transmission mode, switch 02 turns on phase shifter 01 and excitation power amplifier 03. At this time, phase shifter 01 can shift the phase of the radio frequency signal to be transmitted by the radio frequency circuit and transmit the phase-shifted radio frequency signal to excitation power amplifier 03. Excitation power amplifier 03 and final stage power amplifier 04 can sequentially amplify the power of the radio frequency signal. The amplified radio frequency signal can be transmitted to antenna 07 through first coupler 05 and second coupler 06, and radiated by antenna 07.

[0056] When the communication equipment is in signal receiving mode, switch 02 connects phase shifter 01 and attenuator 11. At this time, the radio frequency signal received by antenna 07 is sequentially limited by limiter 08, filtered by filter 09, amplified by LNA 10, and attenuated by attenuator 11 before being transmitted to phase shifter 01. Phase shifter 01 then shifts the phase of the received radio frequency signal and transmits the phase-shifted signal to the radio frequency circuit.

[0057] like Figure 2 As shown, the communication device may also include a beam controller 12 for controlling the beam of received and transmitted radio frequency signals.

[0058] Phase shifters in related technologies generally include switching phase shifters, load-line phase shifters, reflective phase shifters, high-pass and low-pass phase shifters, and vector modulation phase shifters. Among these, switching phase shifters have a relatively simple structure and low insertion loss, but they cannot achieve dynamic phase shifting and suffer from narrow operating bandwidth and large in-band phase shift errors. Load-line phase shifters typically consist of multiple cascaded phase shifting units, resulting in a complex structure, high cost, and difficulty in achieving large-range phase shifting. Reflective phase shifters generally include a bridge and a reflective load, offering a simple structure and the ability to achieve large-range phase shifting, but they typically only provide a fixed phase shift and cannot achieve dynamic phase shifting. High-pass and low-pass phase shifters offer high phase shifting accuracy but suffer from narrow operating bandwidth, high insertion loss, high cost, and complex structure. Vector modulation phase shifters offer high phase shifting accuracy and low insertion loss, but their complex structure and high cost make them unsuitable for dynamic phase shifting.

[0059] This application provides a phase shifter, specifically a reflective phase shifter. This phase shifter has a simple structure, low cost, and can achieve dynamic phase shifting. Figure 3 As shown, the phase shifter provided in this embodiment includes: a microstrip bridge 10, a first reflective load 20, a second reflective load 30, and a power supply structure 40.

[0060] The microstrip line bridge 10 is a bridge formed by microstrip lines, also known as a coupler, and has an input terminal P1, a through terminal P2, a coupling terminal P3, and an output terminal P4. The input terminal P1 is used to receive the input signal, the through terminal P2 is connected to the first reflective load 20, the coupling terminal P3 is connected to the second reflective load 30, and the output terminal P4 is used to output the signal; this output terminal P4 is also known as the isolation terminal.

[0061] At least one of the first reflective load 20 and the second reflective load 30 is a target reflective load, the material of which includes vanadium dioxide (VO2), and the target reflective load is connected to the feed structure 40.

[0062] The power supply structure 40 is used to apply voltage to the target reflective load to which it is connected, so as to adjust the reflection coefficient of the target reflective load.

[0063] For example, refer to Figure 3 Both the first reflective load 20 and the second reflective load 30 are target reflective loads, and the power supply structure 40 can apply voltage to the first reflective load 20 and the second reflective load 30 respectively. Alternatively, refer to... Figure 4 Of the first reflective load 20 and the second reflective load 30, only the first reflective load 20 is the target reflective load. The power supply structure 40 is only connected to the first reflective load 20 and not to the second reflective load 30.

[0064] The microstrip line bridge 10 operates as follows: After receiving the input signal at its input terminal P1, the microstrip line bridge 10 divides the signal power equally and transmits it to the pass-through terminal P2 and the coupling terminal P3 respectively. The signal transmitted to the pass-through terminal P2 is reflected by the first reflective load 20, and the signal transmitted to the coupling terminal P3 is reflected by the second reflective load 30. The phase of the signal reflected by each reflective load is related to the reflection coefficient of that load. The two reflected signals combine at the output terminal P4 to generate an output signal, the phase of which is related to the reflection coefficients of the two reflective loads.

[0065] It is understandable that vanadium dioxide is a phase change material, exhibiting characteristics of thermally induced phase change (relaxation time on the order of microseconds), electrically induced phase change (relaxation time on the order of nanoseconds), photoinduced phase change, and stress-induced phase change. Furthermore, the conductivity of vanadium dioxide can undergo significant changes of several orders of magnitude during phase transitions; for example, its conductivity during the phase transition process can vary from 10 Siemens / m to 10... 5 Siemens / m.

[0066] The phase shifter provided in this application utilizes the electro-phase transition characteristics of vanadium dioxide. By applying a voltage to a target reflective load containing vanadium dioxide material through the feeding structure 40, a phase transition can be induced in the vanadium dioxide material, thereby changing its electrical parameters such as relative permittivity and electron mobility. This change in electrical parameters alters the reflection coefficient of the target reflective load, thus adjusting the phase shift of the phase shifter. The phase shift of the phase shifter refers to the relative phase difference between the output signal of the phase shifter in different control states and the output signal in a reference state. This reference state can be the state when no voltage is applied to the target reflective load, or the state when a certain reference voltage is applied.

[0067] In summary, this application provides a phase shifter. In this phase shifter, at least one of a first reflective load and a second reflective load is a target reflective load, and the material of the target reflective load includes vanadium dioxide. Because the feeding structure in the phase shifter applies a voltage to the target reflective load, the vanadium dioxide in the target reflective load can undergo a phase transition, thereby adjusting the reflection coefficient of the target reflective load. Thus, dynamic adjustment of the phase shift amount of the phase shifter can be achieved, effectively improving the flexibility of the phase shifter's use.

[0068] Furthermore, since vanadium dioxide is easy to prepare and has low cost, the manufacturing process and structure of the phase shifter can be kept relatively simple and the cost is low.

[0069] Continue to refer to Figure 3 The target reflective load in the phase shifter may include: a first metal layer 0a, a vanadium dioxide thin film 0b, and a second metal layer 0c. The first metal layer 0a is connected to the microstrip line bridge 10, and the second metal layer 0c is connected to the feed structure 40.

[0070] Figure 5 This is a cross-sectional view of a target reflective load provided in an embodiment of this application. Figure 6 This is a top view of a target reflective load provided in an embodiment of this application. (Reference) Figure 5 and Figure 6 It can be seen that the first metal layer 0a is also stacked with the vanadium dioxide film 0b, and the second metal layer 0c is also stacked with the vanadium dioxide film 0b.

[0071] The feeding structure 40 can be used to apply a voltage to the second metal layer 0c to adjust the electrical parameters such as the relative permittivity and electron mobility of the vanadium dioxide thin film 0b, thereby adjusting the reflection coefficient of the target reflective load.

[0072] For example, when the voltage applied to the second metal layer 0c by the feed structure 40 is 0 volts (V), the relative permittivity of the vanadium dioxide thin film 0b is 500, and the electron mobility is 10 Siemens / m. When the voltage applied to the second metal layer 0c by the feed structure 40 is 2V, the relative permittivity of the vanadium dioxide thin film 0b is 10000, and the electron mobility is 1×10⁻⁶. 5 Siemens / m.

[0073] Because the manufacturing process of vanadium dioxide thin film 0b is relatively simple and the cost is low, the phase shifter provided in this application embodiment can use vanadium dioxide material in thin film form to form the target reflective load. It is understood that the vanadium dioxide material in the target reflective load can also be in other forms, such as gaseous state.

[0074] Optionally, such as Figures 3 to 6 As shown, both the first metal layer 0a and the second metal layer 0c can be rectangular. The first metal layer 0a has two ends arranged along its length (or width), one end of which is connected to the microstrip line bridge 10, and the other end is stacked with the vanadium dioxide thin film 0b. The second metal layer 0c also has two ends arranged along its length (or width), one end of which is connected to the feed structure 40, and the other end is stacked with the vanadium dioxide thin film 0b.

[0075] refer to Figures 3 to 5 As can be seen, the phase shifter provided in this embodiment may further include a substrate on which the microstrip bridge 10, the first reflective load 20, the second reflective load 30, and the feed structure 40 are all formed. For example, the substrate may be a sapphire (Al2O3) substrate with a relative permittivity of 9.8 and a thickness of 127 micrometers (µm). Alternatively, the substrate may be a quartz substrate with a relative permittivity of 3.9 and a thickness of 100 µm.

[0076] Optionally, the first metal layer 0a and the second metal layer 0c can both at least partially cover the vanadium dioxide thin film 0b. Alternatively, it can be understood that the first metal layer 0a and the second metal layer 0c are both at least partially located on the side of the vanadium dioxide thin film 0b away from the substrate. This ensures that the voltage applied to the metal layers can effectively regulate the electrical parameters of the vanadium dioxide thin film 0b, thereby effectively regulating the phase shift of the phase shifter.

[0077] It is understood that the first metal layer 0a and the second metal layer 0c can both be located on the side of the vanadium dioxide thin film 0b closest to the substrate. Alternatively, at least a portion of one of the first metal layers 0a and the second metal layer 0c may be located on the side of the vanadium dioxide thin film 0b furthest from the substrate, while the other metal layer may be located on the side of the vanadium dioxide thin film 0b closest to the substrate.

[0078] In the embodiments of this application, such as Figure 3 and Figure 4 As shown, the vanadium dioxide thin film 0b can be rectangular or circular. Since rectangular and circular films are simple to manufacture and have high precision, using rectangular or circular vanadium dioxide thin films 0b to form the target reflective load ensures high manufacturing precision and good performance of the phase shifter without increasing the complexity and cost of the phase shifter's manufacturing process.

[0079] It is understood that if both the second metal layer Oc and the vanadium dioxide film Ob are rectangular, the width of the second metal layer Oc can be greater than or equal to the width of the vanadium dioxide film Ob. If both the second metal layer Oc and the vanadium dioxide film Ob are circular, the diameter of the second metal layer Oc can be greater than or equal to the diameter of the vanadium dioxide film Ob. This ensures that the second metal layer Oc can effectively contact the vanadium dioxide film Ob, thereby ensuring that the voltage provided by the feeding structure 40 can be effectively applied to the vanadium dioxide film Ob.

[0080] For example, the thickness of the first metal layer 0a and the second metal layer 0c can be 0.2 μm. The width of the rectangular vanadium dioxide film 0b can be 25 μm, and the width of the rectangular second metal layer 0c can be 200 μm and the length can be 250 μm.

[0081] It is also understood that the vanadium dioxide thin film 0b, the first metal layer 0a, and the second metal layer 0c can be other shapes besides rectangles and circles, such as rhombuses, pentagons, hexagons, or ellipses. The embodiments of this application do not limit the shape of the above-mentioned film layers.

[0082] Optionally, such as Figure 3 As shown, both the first reflective load 20 and the second reflective load 30 can be target reflective loads. That is, the materials of both the first reflective load 20 and the second reflective load 30 include vanadium dioxide, and both are connected to the feed structure 40. Therefore, the feed structure 40 can apply voltage to the first reflective load 20 and the second reflective load 30 respectively, and adjust the reflection coefficients of the two reflective loads respectively, thereby effectively improving the flexibility of adjusting the phase shift of the phase shifter.

[0083] In scenarios where both the first reflective load 20 and the second reflective load 30 are target reflective loads, the vanadium dioxide thin film 0b in both the first reflective load 20 and the second reflective load 30 can have the same size and shape. Optionally, the first metal layer 0a in both the first reflective load 20 and the second reflective load 30 can have the same size and shape. The second metal layer 0c in both the first reflective load 20 and the second reflective load 30 can have the same size and shape.

[0084] By making the first reflective load 20 and the second reflective load 30 the same size and shape, the manufacturing process of the phase shifter can be effectively simplified, manufacturing costs reduced, and manufacturing efficiency improved.

[0085] In this embodiment, if only one of the first reflective load 20 and the second reflective load 30 is the target reflective load, the structure of the other reflective load can be the same as the target reflective load. Alternatively, the other reflective load may not include vanadium dioxide material. For example, the other reflective load may include at least one device selected from microstrip lines, resistors, capacitors, and inductors, and the other reflective load can achieve total reflection of signals.

[0086] like Figure 4 As shown, the feeding structure 40 in the phase shifter may include a feeding electrode 401 and a ground electrode 402. The feeding electrode 401 is connected to the target reflective load, and the ground electrode 402 is also connected to the target reflective load.

[0087] Example, reference Figure 4 It can be seen that the feeding electrode 401 is connected to the second metal layer 0c in the target reflective load, and the grounding electrode 402 is connected to the first metal layer 0a in the target reflective load.

[0088] For scenarios where both the first reflective load 20 and the second reflective load 30 are target reflective loads, as one possible implementation method, refer to... Figure 7 The feed electrode 401 can be a sheet electrode. This sheet electrode can be connected to the first reflective load 20 and the second reflective load 30, respectively. In this implementation, the feed electrode 401 can apply the same voltage to the first reflective load 20 and the second reflective load 30. The sheet electrode can be rectangular, with a width of 300 μm and a length of 400 μm. Of course, the sheet electrode can also be other shapes, such as circular, and this embodiment does not limit its shape.

[0089] As another possible implementation, refer to Figure 8The feeding electrode 401 may include a first feeding electrode 401a and a second feeding electrode 401b that are independent of each other. The first feeding electrode 401a is connected to the first reflective load 20 and is used to apply a first voltage to the first reflective load 20. The second feeding electrode 401b is connected to the second reflective load 30 and is used to apply a second voltage to the second reflective load 30.

[0090] In this implementation, the first voltage and the second voltage can be the same or different. Since the feed electrode 401 includes two independent feed electrodes, and each of these two feed electrodes is connected to a reflective load, the reflection coefficient of each reflective load can be independently adjusted, thereby effectively improving the flexibility of phase shift adjustment. The two feed electrodes can both be rectangular, or they can be circular or other shapes.

[0091] In scenarios where both the first reflective load 20 and the second reflective load 30 are target reflective loads, such as Figure 7 and Figure 8 As shown, the grounding electrode 402 may include a first grounding sub-electrode 402a and a second grounding sub-electrode 402b. The first grounding sub-electrode 402a is connected to the first reflective load 20, and the second grounding electrode 402b is connected to the second reflective load 30.

[0092] For example, such as Figure 7 and Figure 8 As shown, the first grounding electrode 402a is connected to the first metal layer 0a in the first reflective load 20, and the second grounding electrode 402b is connected to the first metal layer 0a in the second reflective load 30. Both grounding electrodes can be rectangular, with a width of 200µm. By setting two grounding electrodes, it is easier to route wiring on the substrate to connect the two reflective loads to the grounding electrode 402, effectively reducing the wiring complexity of the phase shifter.

[0093] It is understood that the grounding electrode 402 can also be a sheet electrode, which can be connected to the first reflective load 20 and the second reflective load 30 respectively.

[0094] Optionally, such as Figure 4 As shown, the feeding structure 40 may further include a fan-shaped stub 403. The fan-shaped stub 403 is connected between the feeding electrode 401 and the target reflective load.

[0095] Understandably, during the operation of the phase shifter, the target reflective load receives not only the input signal (i.e., the radio frequency signal) transmitted by the microstrip bridge 10, but also the voltage signal applied by the feed structure 40. By setting a fan-shaped stub 403 between the feed electrode 401 and the target reflective load, the crosstalk between the radio frequency signal and the voltage signal can be effectively reduced.

[0096] In scenarios where both the first reflective load 20 and the second reflective load 30 are target reflective loads, such as Figure 7 and Figure 8 As shown, the fan-shaped stub 403 may include two fan-shaped sub-stubs 403a and 403b. Fan-shaped sub-stub 403a corresponds to the first reflective load 20 and is used to reduce crosstalk between the radio frequency signal and the voltage signal in the first reflective load 20. Fan-shaped sub-stub 403b corresponds to the second reflective load 30 and is used to reduce crosstalk between the radio frequency signal and the voltage signal in the second reflective load 30. The radius of each fan-shaped sub-stub can be 260 μm.

[0097] Optionally, such as Figure 7 and Figure 8 As shown, the first reflective load 20 and the second reflective load 30 can be arranged symmetrically about the target axis X. The two fan-shaped sub-branches 403a and 403b can also be arranged symmetrically about the target axis X. If both the first reflective load 20 and the second reflective load 30 are rectangular structures, then the target axis X can be parallel to the long side of the rectangular structure.

[0098] refer to Figure 8 It can also be seen that the two feed electrodes 401a and 401b in the feed electrode 401 can also be arranged symmetrically with the target axis X as the axis of symmetry. The two ground electrodes 402a and 402b in the ground electrode 402 can also be arranged symmetrically with the target axis X as the axis of symmetry. Furthermore, the microstrip line bridge 10 can also be an axisymmetric figure with the target axis X as the axis of symmetry.

[0099] By designing the reflective load, feed structure, and microstrip line bridge in the phase shifter as symmetrical structures, the assembly of the phase shifter can be facilitated, and the fabrication efficiency of the phase shifter can be improved.

[0100] Optionally, in the phase shifter provided in this application embodiment, the materials of the microstrip bridge 10, the feed structure 40, and the metal layer in the target reflective load can all be metallic materials. This metallic material can be gold, silver, aluminum, or an alloy, etc. Furthermore, referring to... Figure 3 and Figure 4It can be seen that the first metal layer 0a in the target reflective load and one terminal of the microstrip line bridge 10 to which it is connected can be an integral structure. For example, the first metal layer 0a in the first reflective load 20 and the through terminal P2 are an integral structure, and the first metal layer 0a in the second reflective load 30 and the coupling terminal P3 are an integral structure. This integral structure can be rectangular, the width of which can be equal to the width of the vanadium dioxide film, and the length of which can be 140 μm.

[0101] refer to Figure 3 , Figure 4 , Figure 7 and Figure 8 As can be seen, the feed structure 40 in the phase shifter can be connected to the target reflective load via a metal trace. The material of this metal trace can be the same as the material of the feed structure 40. For example, the material of the metal trace can be gold, silver, aluminum, or an alloy. The width of the aforementioned metal trace can be 25µm.

[0102] Figure 9 This is a schematic diagram of the structure of a microstrip line bridge 10 provided in an embodiment of this application. (Reference) Figure 9 At least one of the input terminal P1, the through terminal P2, the coupling terminal P3, and the output terminal P4 of the microstrip bridge 10 is a coupled structure. For example, Figure 9 The input terminal P1 and output terminal P4 of the microstrip line bridge 10 shown are both coupled structures.

[0103] like Figure 9 As shown, the coupling structure includes: a first microstrip line P01 and a second microstrip line P02 arranged at intervals, with the first microstrip line P01 and the second microstrip line P02 partially overlapping to achieve mutual coupling between the first microstrip line P01 and the second microstrip line P02. The partial overlap of the first microstrip line P01 and the second microstrip line P02 can mean that the orthographic projections of the two microstrip lines onto a reference plane partially overlap. This reference plane is a plane perpendicular to the substrate of the phase shifter and parallel to the first microstrip line P01. Figure 9 The partial overlap of the first microstrip line P01 and the second microstrip line P02 can also be understood as: the two microstrip lines have an overlapping segment P0, which enables signal coupling.

[0104] Optionally, the first microstrip line P01 and the second microstrip line P02 can be parallel to each other. Furthermore, it is understood that, in order to achieve effective signal coupling, the spacing between the first microstrip line P01 and the second microstrip line P02 can be less than λ / 10, where λ is the wavelength corresponding to the center frequency point f0 of the coupling structure.

[0105] In this embodiment, both the input terminal P1 and the output terminal P4 of the microstrip line bridge 10 can be coupled structures. Alternatively, both the through terminal P2 and the coupled terminal P3 of the microstrip line bridge 10 can be coupled structures.

[0106] Optionally, such as Figure 10 As shown, the coupling structure may further include a third microstrip line P03 spaced apart from the second microstrip line P02. The third microstrip line P03 also partially overlaps with the second microstrip line P02. That is, the third microstrip line P03 and the second microstrip line P02 also have overlapping sections.

[0107] Understandably, this coupling structure may include multiple spaced microstrip lines, with each pair of adjacent microstrip lines partially overlapping to ensure effective signal coupling. Optionally, each pair of adjacent microstrip lines in the coupling structure may be arranged in parallel.

[0108] Since at least one of the input terminal P1, the through terminal P2, the coupling terminal P3, and the output terminal P4 of the microstrip line bridge 10 is a coupled structure, the operating bandwidth of the phase shifter can be made wider. The principle that the coupling structure enables the phase shifter to have broadband characteristics is analyzed below.

[0109] Assuming the microstrip bridge 10 is an ideal 3 dB bridge, then the impedances Y1 of stub 1 and Y2 of stub 2 of the microstrip bridge 10 satisfy: Furthermore, the electrical length θ of both stub 1 and stub 2 is 90°. The width of both stub 1 and stub 2 can be 25 μm, and the length can be 180 μm. If the microstrip bridge 10 is in impedance-matched condition, then either end ( Figure 9 Taking input terminal P1 as an example, the equivalent impedance Z0 at the stub connection can satisfy:

[0110]

[0111] In formula (1) above, j is the imaginary unit. (See reference...) Figure 9 In the coupling structure, the two ends of the second microstrip line P02 can respectively form port 1 and port 2 of the coupling structure, and the two ends of the first microstrip line P01 can respectively form port 3 and port 4 of the coupling structure. Port 1 is used to receive the input signal, and port 3 couples the input signal to the various branches in the microstrip line bridge 10. The impedance matching matrix of port 1 and port 3 can be expressed as:

[0112]

[0113] In formula (2) above, V1 is the voltage at port 1, and V3 is the voltage at port 3. I1 is the current at port 1, and I3 is the current at port 3. oeZ is the even-mode impedance of the coupled structure. oo Let θ be the odd-mode impedance of the coupling structure, and θ be the electrical length from port 1 to port 4 of the coupling structure. This embodiment of the application will be illustrated by taking an example where this electrical length is equal to the electrical length θ of stub 1 and stub 2.

[0114] According to microwave network theory, the impedance Z of this coupling structure in It can be represented as:

[0115]

[0116] Among them, Z 11 Z is the element in the first row and first column of the impedance matching matrix shown in formula (2). 13 Z is the element in the first row and second column of the impedance matching matrix shown in formula (2). 31 Z is the element in the 2nd row and 1st column of the impedance matching matrix shown in formula (2). 33 This refers to the element in the second row and second column of the impedance matching matrix shown in formula (2). That is,

[0117] When the impedance of this coupling structure is impedance matched with the impedance at the stub connecting to the input terminal P1, the following formula is satisfied:

[0118]

[0119] in, Z represents in The conjugate of Z. Because when Z in When Z0 = 1, the above formula (4) holds true. Therefore, combining formula (2) and formula (3), we can obtain:

[0120] (Z oe -Z oo )=2 formula (5);

[0121] By combining equations (1) to (3) and equation (5), and separating the real and imaginary parts of the above equations, we can obtain the following two matching equations:

[0122]

[0123]

[0124] When θ satisfies: And f = f + f - Or when f0, the above formulas (6) and (7) hold. Where f0 is the center frequency of the coupled structure, f... - For frequencies lower than the center frequency f0, f+ This refers to frequencies higher than the center frequency f0. Since the operating frequency f of this coupling structure is equal to f... + f - When f0, the matching equations shown in formulas (6) and (7) above both hold true, thus the coupled structure has three matching conditions. Compared to the traditional uncoupled microstrip bridge which only has a single matching condition, i.e. only a center frequency, the microstrip bridge provided in this application embodiment has a wider operating frequency band, realizing the broadband characteristics of the phase shifter.

[0125] The following section uses the example of both the first reflecting load 20 and the second reflecting load 30 being target reflecting loads to illustrate the relationship between the phase shift of the phase shifter and the reflection coefficients of these two reflecting loads. Assuming the microstrip bridge 10 in the phase shifter is an ideal 3dB bridge, then refer to... Figure 11 The power of the input signal received at input terminal P1 of the microstrip bridge 10 is evenly split between the through terminal P2 and the coupling terminal P3. The reflection coefficients of the two reflective loads can be adjusted by adjusting the voltage applied to them. Figure 11 As shown, the process of adjusting the applied voltage can be equivalent to switching the reflective load (also called the reflective section) connected to the through terminal P2 and the coupling terminal P3.

[0126] like Figure 11 As shown, when the reflection coefficients of the reflective loads connected to the through-hole P2 and the coupling terminal P3 are both Γ1, the through-hole P2 and the coupling terminal P3, acting as reflection ports, can reflect the input power of the input terminal P1 to the output terminal P4. The input voltage wave at the output terminal P4 can be:

[0127] V 41 =Γ1v2e -jθ / 2+Γ1v3e -jθ / 2=Γ1v i e -jθ Formula (8);

[0128] Where v2 is the voltage at the through terminal P2 and v3 is the voltage at the coupling terminal P3. Since v2 = v3 in an ideal 3dB bridge, v3 is used in the above formula (8). i This refers to v2 and v3 (i.e., v i =v2=v3), to simplify the formula. Correspondingly, when the reflection coefficients of the reflective loads connected to the through terminal P2 and the coupling terminal P3 are both Γ2, the input voltage wave at the output terminal P4 can be:

[0129] V 42 =Γ2v i e -jθ Formula (9);

[0130] Combining formulas (8) and (9), we can obtain:

[0131]

[0132] Therefore, the phase shift of the phase shifter can be determined. satisfy:

[0133]

[0134] Wherein, the reflection coefficients Γ1 and Γ2 can be complex numbers with amplitude and phase components expressed in polar coordinates. arg represents the argument of the complex number. Considering the maximum phase shift is 180°, the difference between the short-circuit lengths of the load arms at the through end P2 and the coupling end P3 of the microstrip bridge 10 can be a quarter wavelength. Here, the load arm at the through end P2 can refer to the first reflective load 20, and the load arm at the coupling end P3 can refer to the second reflective load 30.

[0135] This application embodiment also simulates the impedance circle diagram of the load arm of the microstrip line bridge 10. The simulation parameters used in this application embodiment are as follows: the substrate is a sapphire substrate with a relative permittivity of 9.8 and a thickness of 127 μm; the vanadium dioxide thin films in both reflective loads are rectangular in shape, with a length of 350 μm and a width of 20 μm; the center frequency of the coupling structure in the microstrip line bridge 10 is 150 GHz. Furthermore, this application embodiment simulates the impedance circle diagram of the load arm of the microstrip line bridge 10 in two states.

[0136] In state 1, the voltage applied to both reflective loads in the phase shifter is 0V. At this time, the relative permittivity of the vanadium dioxide thin film is 500, the electron mobility is 10 Siemens / m, and the impedance circle diagrams of the load arm at the through terminal P2 and the coupling terminal P3 of the microstrip bridge 10 can be referenced. Figure 12 In state 2, the voltage applied to both reflective loads in the phase shifter is 2V. At this time, the relative permittivity of the vanadium dioxide thin film is 10000, and the electron mobility is 1×10⁻⁶. 5 The impedance circle diagrams for the load arm of the through terminal P2 and the load arm of the coupled terminal P3 of the Siemens / m microstrip bridge 10 can be referenced. Figure 13 .contrast Figure 12 and Figure 13 It can be seen that, in both states, the changes in the short-circuit path of the load arm at the through end P2 and the short-circuit path of the load arm at the coupling end P3 are approximately one-quarter of a wavelength. Therefore, the theoretical phase shift (i.e., theoretical phase shift amount) of the phase shifter in the above two states is 180°.

[0137] Understandably, during the fabrication of the phase shifter, the required phase shift amount can be determined based on the needs of the application scenario. Furthermore, by rationally designing the physical dimensions of the vanadium dioxide thin film, the impedance of the load arm of the through terminal P2 and the coupling terminal P3 of the microstrip bridge 10 can be matched with the phase shift amount.

[0138] Figure 14 This is a full-wave simulation diagram of a phase shifter provided in an embodiment of this application. Figure 14 The diagram shows the S-parameters and phase shift amount of the phase shifter when it is in state 1 (i.e., the applied voltage is 0V) and state 2 (i.e., the applied voltage is 2V). Figure 14 The horizontal axis represents frequency in GHz; the left vertical axis represents S-parameters in dB; and the right vertical axis represents phase in degrees. The S-parameters include return loss SL. 11 and insertion loss S 21 . refer to Figure 14 It can be seen that the phase shifter provided in this application has a return loss S in the frequency band from 115GHz to 180GHz under different states. 11 All are better than -10dB, insertion loss S 21 All are better than -5dB.

[0139] Figure 14 The diagram also shows the phase shift of the phase shifter at different frequencies, which can be equal to the S value of the phase shifter in state 1. 21 The phase of S in state 2 21 The phase difference. Reference Figure 14 Within the 115GHz to 180GHz frequency band, the phase shift error relative to 180° is approximately [-5°, 8°]. This indicates that the phase shift accuracy of this phase shifter is high.

[0140] Based on the above analysis, it can be seen that the phase shifter provided in this application embodiment is applicable to the field of THz communication technology. Furthermore, this phase shifter not only has advantages such as simple structure, low insertion loss, and wide operating bandwidth, but also enables wide-range and high-precision phase shifting.

[0141] Figure 15 This is a schematic diagram illustrating the change in phase shift of a phase shifter as a function of voltage, provided in an embodiment of this application. Figure 15 The simulation was conducted using a rectangular vanadium dioxide film in a phase shifter, with a length of 200 μm and a width of 25 μm as an example. Figure 15 The diagram shows the phase shift of the phase shifter in the 120GHz to 170GHz frequency band when applied voltages of +0.5V, +1.0V, +1.5V, and +2.0V, respectively, with the phase shift calculated using the target reflective load without applied voltage as a reference state. Figure 15 It can be seen that when the voltages applied to the two reflective loads in the phase shifter change, the phase shift of the phase shifter also changes accordingly. Therefore, the solution provided in this application embodiment can achieve continuous adjustment of the phase shift by continuously adjusting the voltage. That is, the phase shifter provided in this application embodiment has the characteristic of continuous phase change.

[0142] In summary, this application provides a phase shifter. In this phase shifter, at least one of a first reflective load and a second reflective load is a target reflective load, and the material of the target reflective load includes vanadium dioxide. Since the feeding structure in the phase shifter can apply a voltage to the target reflective load, a phase transition can occur in the vanadium dioxide within the target reflective load, thereby adjusting the reflection coefficient of the target reflective load. Thus, continuous and dynamic adjustment of the phase shift amount of the phase shifter can be achieved, effectively improving the flexibility of the phase shifter's use.

[0143] Furthermore, due to the advantages of vanadium dioxide material, such as ease of preparation and low cost, the manufacturing process and structure of this phase shifter are relatively simple, and the manufacturing cost is low. Moreover, because at least one end of the microstrip bridge in this phase shifter employs a coupling structure, the phase shifter can operate with a wide bandwidth, low loss, and achieve large-range and high-precision phase shifting.

[0144] Figure 16 This is a schematic diagram of another phase shifter provided in an embodiment of this application. For example... Figure 16 As shown, the phase shifter includes: a microstrip bridge 10, a first reflective load 20, and a second reflective load 30.

[0145] The microstrip bridge 10 has an input terminal P1, a through terminal P2, a coupling terminal P3, and an output terminal P4. The input terminal P1 is used to receive the input signal, the through terminal P2 is connected to the first reflective load 20, the coupling terminal P3 is connected to the second reflective load 30, and the output terminal P4 is used to output the signal. This output terminal P4 is also called the isolation terminal.

[0146] At least one of the input terminal P1, the through terminal P2, the coupling terminal P3, and the output terminal P4 is a coupled structure. For example, Figure 16 The following diagram illustrates a coupling structure using input terminal P1 and output terminal P4 as an example. (Reference) Figure 16 As can be seen, the coupling structure includes: a first microstrip line P01 and a second microstrip line P02 arranged at intervals. The first microstrip line P01 and the second microstrip line P02 partially overlap.

[0147] Since at least one of the input terminal P1, through terminal P2, coupling terminal P3 and output terminal P4 of the microstrip bridge 10 is a coupling structure, the phase shifter can have a wide operating bandwidth, low loss, and can achieve a wide range and high precision phase shift.

[0148] Optionally, such as Figure 16 As shown, both the input terminal P1 and the output terminal P4 of the microstrip line bridge 10 can be coupled structures. Alternatively, both the through terminal P2 and the coupled terminal P3 of the microstrip line bridge 10 can be coupled structures.

[0149] Understandable, Figure 16 The structure of the first reflective load 20 and the second reflective load 30 in the phase shifter shown can be the same as the structure of the target reflective load in the above embodiment. Alternatively, the first reflective load 20 and the second reflective load 30 may include at least one device selected from microstrip lines, resistors, capacitors, and inductors.

[0150] This application also provides a microstrip line bridge in its embodiments. (See reference...) Figure 16 The microstrip bridge 10 has an input terminal P1, a through terminal P2, a coupling terminal P3, and an output terminal P4. Furthermore, at least one of the input terminal P1, the through terminal P2, the coupling terminal P3, and the output terminal P4 is a coupling structure.

[0151] refer to Figure 16 The coupling structure includes a first microstrip line P01 and a second microstrip line P02 arranged at intervals. The first microstrip line P01 and the second microstrip line P02 partially overlap.

[0152] It is understood that the microstrip line bridge provided in this application embodiment can be applied not only to the phase shifter provided in the above embodiment, but also to other types of signal processing devices. For example, the microstrip line bridge can also be applied to mixers, filters, or attenuators. Since the microstrip line bridge has a wide operating bandwidth, the signal processing device using the microstrip line bridge can also have a wide operating bandwidth, for example, the signal processing device can be applied in the THz range.

[0153] In the embodiments of this application, the terms "first," "second," and "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "at least one" refers to one or more, and "multiple" refers to two or more.

[0154] The term "and / or" simply describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone. Additionally, the character " / " in this text generally indicates that the preceding and following related objects have an "or" relationship.

[0155] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the concept and principles of this application should be included within the protection scope of this application.

Claims

1. A phase shifter, characterized in that, The phase shifter includes: a microstrip line bridge, a first reflective load, a second reflective load, and a feeding structure; The microstrip line bridge has an input terminal, a through terminal, a coupling terminal, and an output terminal. The input terminal is used to receive an input signal, the through terminal is connected to the first reflective load, the coupling terminal is connected to the second reflective load, and the output terminal is used to output a signal. At least one of the first reflective load and the second reflective load is a target reflective load, and the target reflective load includes: a first metal layer, a vanadium dioxide thin film, and a second metal layer; The first metal layer is connected to the microstrip line bridge, and the first metal layer is stacked with the vanadium dioxide thin film; The second metal layer is connected to the feeding structure, and the second metal layer is stacked with the vanadium dioxide thin film; The power supply structure is used to apply voltage to the second metal layer.

2. The phase shifter according to claim 1, characterized in that, The voltage applied to the second metal layer by the power supply structure can be continuously adjusted to achieve continuous adjustment of the phase shift of the phase shifter.

3. The phase shifter according to claim 1 or 2, characterized in that, The vanadium dioxide thin film is rectangular or circular in shape.

4. The phase shifter according to any one of claims 1 to 3, characterized in that, Both the first metal layer and the second metal layer at least partially cover the vanadium dioxide thin film.

5. The phase shifter according to any one of claims 1 to 4, characterized in that, At least one of the input terminal, the through terminal, the coupling terminal, and the output terminal of the microstrip line bridge is a coupling structure; The coupling structure includes: a first microstrip line and a second microstrip line arranged at intervals, wherein the first microstrip line and the second microstrip line partially overlap.

6. The phase shifter according to any one of claims 1 to 5, characterized in that, Both the first reflective load and the second reflective load are the target reflective load.

7. The phase shifter according to claim 6, characterized in that, The vanadium dioxide films in the first and second reflective loads have the same size and shape.

8. The phase shifter according to claim 6 or 7, characterized in that, The power supply structure includes a power supply electrode and a grounding electrode; Both the feed electrode and the ground electrode are connected to the target reflective load.

9. The phase shifter according to claim 8, characterized in that, The feeding electrode includes a first feeding electrode and a second feeding electrode; The first electron-feeding electrode is connected to the first reflective load and is used to apply a first voltage to the first reflective load; The second electron-feeding electrode is connected to the second reflective load and is used to apply a second voltage to the second reflective load.

10. The phase shifter according to claim 8 or 9, characterized in that, The grounding electrode includes a first grounding sub-electrode and a second grounding electrode; The first grounding electrode is connected to the first reflective load, and the second grounding electrode is connected to the second reflective load.

11. The phase shifter according to any one of claims 8 to 10, characterized in that, The power supply structure also includes: a fan-shaped branch; The fan-shaped branch connects the feed electrode and the target reflective load.

12. The phase shifter according to claim 11, characterized in that, The fan-shaped branch includes two fan-shaped sub-branches.

13. The phase shifter according to claim 12, characterized in that, The first reflective load and the second reflective load are arranged symmetrically about the target axis. The two fan-shaped sub-branches are arranged symmetrically with the target axis as the axis of symmetry.

14. A communication device, characterized in that, The communication device includes: a radio frequency circuit, an antenna, and a phase shifter as described in any one of claims 1 to 13; The phase shifter is used to perform phase shifting processing on the radio frequency signal transmitted by the radio frequency circuit, or to perform phase shifting processing on the radio frequency signal received by the antenna.

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