A large bandgap topological insulator material Bi4Br4 nanostructure and its preparation method
The growth of Bi4Br4 nanostructures on silicon wafers via physical vapor transport method solves the problems of complex preparation methods and high energy consumption in existing technologies, and achieves high-quality and uniform nanostructure preparation, providing a basic material for device research.
Patent Information
- Application Number
- CN202311039663.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-17
- Publication Date
- 2026-06-30
- Estimated Expiration
- 2043-08-17
AI Technical Summary
Existing technologies make it difficult to directly prepare high-quality two-dimensional Bi4Br4 nanostructures, and the preparation methods are complex, energy-intensive, and difficult to achieve the control and uniformity of nanostructures.
Bi4Br4 nanostructures were grown on silicon substrates using a physical vapor transport method. By controlling the heating temperature and isothermal time at the raw material end, nanosheets, nanofilms, and nanowires were directly fabricated on the silicon wafers. The type of nanostructure was controlled by using an Au film.
The fabrication of high-quality, uniform Bi4Br4 nanostructures was achieved, simplifying the process, reducing energy consumption, and providing a fundamental material for device research.