Method and device for determining the collector voltage of an igbt during turn-on transient

Abstract

This specification proposes a method and apparatus for determining the transient collector-emitter voltage during IGBT turn-on. The method includes: constructing a target circuit; the target circuit includes an insulated-gate bipolar transistor (IGBT) and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip; determining intermediate parameters of the IGBT; and determining the collector current of the IGBT based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT; determining the collector-emitter voltage of the freewheeling diode chip based on the collector current of the IGBT; and determining the collector-emitter voltage of the IGBT based on the gate voltage of the IGBT and the collector-emitter voltage of the freewheeling diode chip. Based on this method, the collector-emitter voltage can be quickly calculated from the gate voltage of the IGBT, avoiding the operational inconvenience caused by directly measuring the collector-emitter voltage.

Description

Technical Field

[0001] This specification belongs to the field of voltage monitoring technology for insulated gate bipolar transistors (IGBTs), and particularly relates to a method and apparatus for determining the transient collector-emitter voltage during IGBT turn-on. Background Technology

[0002] The turn-on transient process of an Insulated Gate Bipolar Transistor (IGBT) is the process of the IGBT changing from off to on. During the turn-on transient, the collector current of the IGBT increases rapidly, while the collector-emitter voltage gradually decreases. By analyzing the collector-emitter voltage, the power loss during the turn-on process can be further obtained, which is helpful in taking reasonable measures to reduce power loss and improve the service life of the IGBT.

[0003] In existing technologies, the collector-emitter voltage during turn-on transients can be measured using voltage measuring instruments. However, in actual production, measuring the collector-emitter voltage using voltage measuring instruments with probes is inconvenient and may affect normal production.

[0004] There is currently no effective solution to the aforementioned technical problems. Summary of the Invention

[0005] This specification provides a method and apparatus for determining the transient collector-emitter voltage during IGBT turn-on. It can quickly calculate the collector-emitter voltage based on the gate voltage of the target transistor, avoiding the operational inconvenience caused by directly measuring the collector-emitter voltage.

[0006] The purpose of the embodiments in this specification is to provide a method for determining the transient collector-emitter voltage during IGBT turn-on, including:

[0007] Construct a target circuit; wherein the target circuit includes an insulated gate bipolar transistor and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip;

[0008] Determine the intermediate parameters of the insulated gate bipolar transistor; and determine the collector current of the insulated gate bipolar transistor based on the intermediate parameters, the gate voltage of the insulated gate bipolar transistor, and the gate voltage threshold of the insulated gate bipolar transistor.

[0009] The collector-emitter voltage of the freewheeling diode chip is determined based on the collector current of the insulated gate bipolar transistor.

[0010] The collector-emitter voltage of the insulated gate bipolar transistor is determined based on the gate voltage of the insulated gate bipolar transistor and the collector-emitter voltage of the freewheeling diode chip.

[0011] Further, in another embodiment of the method, determining the intermediate parameters of the insulated-gate bipolar transistor (IGBT) and determining the collector current of the IGBT based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT includes:

[0012] The intermediate parameters and collector current of the insulated gate bipolar transistor are determined according to the following formula:

[0013]

[0014] Among them, i C The value represents the collector current of an insulated-gate bipolar transistor, λ represents an intermediate parameter, and u GE U represents the gate voltage of an insulated-gate bipolar transistor. T α represents the gate voltage threshold of an insulated-gate bipolar transistor. pnp μ represents the transfer factor of an insulated-gate bipolar transistor. n The insulated-gate bipolar transistor (IGBT) has electron mobility w1, channel width c, and other properties. ox The value represents the channel capacitance of an insulated-gate bipolar transistor (IGBT), and L represents the channel length of the IGBT.

[0015] Furthermore, in another embodiment of the method, determining the collector-emitter voltage of the freewheeling diode chip based on the collector current of the insulated-gate bipolar transistor includes:

[0016] The freewheeling diode current is determined based on the collector current of the insulated gate bipolar transistor.

[0017] The collector-emitter voltage of the freewheeling diode chip is determined based on the freewheeling diode current.

[0018] Furthermore, in another embodiment of the method, determining the collector-emitter voltage of the freewheeling diode chip based on the freewheeling diode current includes:

[0019] The collector-emitter voltage of the freewheeling diode chip is determined according to the following formula:

[0020] u F,chip =U F0 +R on ·i F

[0021] Among them, u F,chip U represents the collector-emitter voltage of the freewheeling diode chip. F0 R represents the on-state voltage threshold of the freewheeling diode chip. onIndicates the on-resistance of the freewheeling diode chip, i F This indicates the current of the freewheeling diode.

[0022] Furthermore, in another embodiment of the method, determining the collector-emitter voltage of the insulated-gate bipolar transistor based on the gate voltage of the insulated-gate bipolar transistor and the collector-emitter voltage of the freewheeling diode chip includes:

[0023] The voltage value of the loop parasitic inductance device of the target circuit is obtained based on the gate voltage of the insulated gate bipolar transistor.

[0024] The collector-emitter voltage of the insulated gate bipolar transistor is determined based on the voltage value of the parasitic inductance device in the target circuit and the collector-emitter voltage of the freewheeling diode chip.

[0025] Furthermore, in another embodiment of the method, obtaining the voltage value of the loop parasitic inductance device of the target circuit based on the gate voltage of the insulated gate bipolar transistor includes:

[0026] The voltage value of the loop parasitic inductance device in the target circuit is obtained according to the following formula:

[0027]

[0028] Among them, u s L represents the voltage value of the parasitic inductance device in the loop of the target circuit. s i represents the value of the loop parasitic inductance of the target circuit. C The value represents the collector current of an insulated-gate bipolar transistor, t represents time, λ represents intermediate parameters, and u represents the collector current. GE U represents the gate voltage of an insulated-gate bipolar transistor. T α represents the gate voltage threshold of an insulated-gate bipolar transistor. pnp This represents the transfer factor of an insulated-gate bipolar transistor.

[0029] Furthermore, in another embodiment of the method, determining the collector-emitter voltage of the insulated-gate bipolar transistor based on the voltage value of the parasitic inductance device in the target circuit and the collector-emitter voltage of the freewheeling diode chip includes:

[0030] The collector-emitter voltage of the insulated-gate bipolar transistor is determined according to the following formula:

[0031]

[0032] Among them, u CE U represents the collector-emitter voltage of an insulated-gate bipolar transistor. DC U represents the DC capacitor voltage.F,chip This represents the collector-emitter voltage of the freewheeling diode chip, u. s U represents the voltage value of the parasitic inductance device in the loop of the target circuit. F0 R represents the on-state voltage threshold of the freewheeling diode chip. on I represents the on-resistance of the freewheeling diode chip. L The load current is represented by λ, and the intermediate parameter is u. GE U represents the gate voltage of an insulated-gate bipolar transistor. T α represents the gate voltage threshold of an insulated-gate bipolar transistor. pnp L represents the transfer factor of an insulated-gate bipolar transistor. s The value of the loop parasitic inductance of the target circuit is represented by t, where t represents time.

[0033] Furthermore, in another embodiment of the method, before determining the collector current of the insulated-gate bipolar transistor based on the gate voltage and the gate voltage threshold of the insulated-gate bipolar transistor, the method further includes:

[0034] A static test was performed on the insulated gate bipolar transistor to obtain the static gate voltage threshold.

[0035] A dynamic turn-on experiment was conducted on the insulated gate bipolar transistor (IGBT) to obtain a first curve showing the relationship between the collector current and time, and a second curve showing the relationship between the gate voltage and time.

[0036] From the first relationship curve, determine the moment when the collector current begins to increase, and use it as the target moment;

[0037] The gate voltage corresponding to the target time is determined from the second relationship curve and used as the dynamic gate voltage threshold.

[0038] The gate voltage threshold of the insulated gate bipolar transistor is obtained by weighted summation of the static gate voltage threshold and the dynamic gate voltage threshold.

[0039] On the other hand, embodiments of this specification also provide a device for determining the transient collector-emitter voltage during IGBT turn-on, comprising:

[0040] A construction module is used to construct a target circuit; wherein the target circuit includes an insulated gate bipolar transistor and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip;

[0041] The first determining module determines the intermediate parameters of the insulated gate bipolar transistor (IGBT); and determines the collector current of the IGBT based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT.

[0042] The second determining module is used to determine the collector-emitter voltage of the freewheeling diode chip based on the collector current of the insulated gate bipolar transistor.

[0043] The third determining module is used to determine the collector-emitter voltage of the insulated gate bipolar transistor based on the gate voltage of the insulated gate bipolar transistor and the collector-emitter voltage of the freewheeling diode chip.

[0044] Furthermore, embodiments of this specification also provide a computer-readable storage medium storing computer instructions thereon, wherein the computer-readable storage medium executes the instructions to implement the above-described method for determining the transient collector-emitter voltage of the IGBT turn-on.

[0045] This specification provides an embodiment of a method for determining the transient collector-emitter voltage of an IGBT during turn-on. The method involves constructing a target circuit, which includes an insulated-gate bipolar transistor (IGBT) and a freewheeling diode. The freewheeling diode includes a freewheeling diode chip. The method involves determining intermediate parameters of the IGBT, and based on these intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT, determining the collector current of the IGBT. Based on the collector current of the IGBT, the collector-emitter voltage of the freewheeling diode chip is determined. Finally, based on the gate voltage of the IGBT and the collector-emitter voltage of the freewheeling diode chip, the collector-emitter voltage of the IGBT is determined.

[0046] Furthermore, the collector-emitter voltage of the insulated gate bipolar transistor (IGBT) can be determined as follows: based on the gate voltage of the IGBT, the voltage value of the loop parasitic inductor of the target circuit is obtained; based on the voltage value of the loop parasitic inductor of the target circuit and the collector-emitter voltage of the freewheeling diode chip, the collector-emitter voltage of the IGBT is determined. Attached Figure Description

[0047] To more clearly illustrate the embodiments of this specification, the accompanying drawings used in the embodiments will be briefly introduced below. The drawings described below are only some embodiments recorded in this specification. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0048] Figure 1This is a flowchart illustrating an embodiment of a method for determining the transient collector-emitter voltage during IGBT turn-on provided in this specification.

[0049] Figure 2 This is a schematic diagram of the target circuit provided in this manual;

[0050] Figure 3 This is a diagram showing the voltage and current waveform changes during the turn-on transient process provided in this manual;

[0051] Figure 4 This is a graph showing the forward bias characteristic of the freewheeling diode provided in the embodiments of this specification;

[0052] Figure 5 This is a schematic diagram of the process for determining the collector-emitter voltage in a specific scenario example provided in the embodiments of this specification;

[0053] Figure 6 This is a schematic diagram of an embodiment of the device for determining the transient collector-emitter voltage of an IGBT during turn-on, as provided in this specification.

[0054] Figure 7 This is a schematic diagram of the structural composition of a server provided in this manual. Detailed Implementation

[0055] To enable those skilled in the art to better understand the technical solutions in this specification, the technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this specification, and not all embodiments. Based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this specification.

[0056] The turn-on transient process of an insulated gate bipolar transistor (IGBT) is the process of the IGBT changing from being off to being on. During the turn-on transient process, the collector current of the IGBT increases rapidly, while the collector-emitter voltage gradually decreases.

[0057] While it is possible to measure the collector-emitter voltage during turn-on transients using voltage measuring instruments in existing technologies, measuring the collector-emitter voltage with a probe using such instruments is inconvenient in actual production and may disrupt normal operations.

[0058] In view of the above-mentioned problems in existing methods and the specific reasons for these problems, this application introduces a method for determining the collector-emitter voltage of IGBT turn-on transient based on gate voltage, so as to accurately calculate the collector-emitter voltage based on the gate voltage.

[0059] Based on the above approach, this specification proposes a method for determining the transient collector-emitter voltage during IGBT turn-on. First, a target circuit is constructed; wherein the target circuit includes an insulated-gate bipolar transistor (IGBT) and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip. Then, the intermediate parameters of the IGBT are determined; and based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT, the collector current of the IGBT is determined; based on the collector current of the IGBT, the collector-emitter voltage of the freewheeling diode chip is determined; finally, based on the gate voltage of the IGBT and the collector-emitter voltage of the freewheeling diode chip, the collector-emitter voltage of the IGBT is determined.

[0060] See Figure 1 As shown in the embodiments of this specification, a method for determining the transient collector-emitter voltage during IGBT turn-on is provided. In specific implementation, this method may include the following:

[0061] S101: Construct the target circuit; wherein the target circuit includes an insulated gate bipolar transistor and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip.

[0062] In some embodiments, see Figure 2 As shown, Figure 2 The target circuit in the diagram is a half-bridge circuit, which includes: an insulated-gate bipolar transistor (IGBT), a freewheeling diode (FWD), and a load device (L). load The insulated gate bipolar transistor (IGBT) includes an IGBT chip, an IGBT packaged parasitic inductor device L... s,CE The freewheeling diode includes a freewheeling diode chip (FWD chip), a freewheeling diode package, and a parasitic inductor L. s,F The load device specifically refers to a load inductor (load inductor) used to provide inductance. An IGBT also includes a gate (G), emitter (E), collector (C), and... GE u represents the gate voltage of an insulated-gate bipolar transistor. CE U represents the collector-emitter voltage of an insulated-gate bipolar transistor. CE,chip This indicates the collector-emitter voltage of the IGBT chip. F U represents the current of the freewheeling diode. F U represents the voltage of the freewheeling diode. F,chip This indicates the collector-emitter voltage of the FWD chip. L s,2 L represents the parasitic inductance of a freewheeling diode. s,1 i represents the parasitic inductance of the loop in an insulated-gate bipolar transistor. CI represents the collector current of an insulated-gate bipolar transistor. L U represents the load current of the load device. DC This represents the DC capacitor voltage, and C1 represents the capacitance. Arrow 1 indicates i. C The direction of the current, indicated by arrow arrow2. F The direction, arrow arrow3 indicates I L The direction.

[0063] In some embodiments, the IGBT chip includes: a drift region N - Buffer N + Injection area P + .

[0064] In some embodiments, see Figure 3 As shown, Figure 3 This diagram shows the voltage and current waveform changes during the turn-on transient process. CE U represents the collector-emitter voltage of an insulated-gate bipolar transistor. CE,chip Indicates the collector-emitter voltage of the IGBT chip, i C U represents the collector current of an insulated-gate bipolar transistor. GE U represents the gate voltage of an insulated-gate bipolar transistor. T1 i represents the dynamic gate voltage threshold of an insulated-gate bipolar transistor. F U represents the current of the freewheeling diode. F U represents the voltage of the freewheeling diode. F,chip The collector-emitter voltage of the FWD chip is represented by t0, t1, t2, t3, and t4, which represent different moments of the turn-on transient.

[0065] In some embodiments, for Figure 3 The specific process will be explained below:

[0066] At time t0-t1: An on-signal is applied to the gate at time t0, and the gate capacitance is charged;

[0067] Time interval t1-t2: At time t1, u GE When the gate turn-on voltage is exceeded, electrons enter the drift region N through the conductive channel. - Simultaneously injecting into region P + Towards drift region N - Injecting holes, the load current shifts from the FWD to the IGBT, as i C Increase, i C The positive rate of change induces a voltage on the parasitic inductive device in the loop; at time t2, i C Rise to load current, i F Drop to 0;

[0068] Time interval t2-t3: After time t2, i F At zero crossing, a large number of remaining electrons in the drift region N- begin to be swept out, forming a reverse current. This reverse current, together with the load current, constitutes i. C , causing i C Overshoot occurs; simultaneously, drift zone N - The conductivity modulation is gradually completed, u CE It decreases rapidly; the FWD reverse recovery current reaches its peak at time t3.

[0069] At time t3-t4: After time t3, the reverse recovery current of the FWD decreases rapidly, inducing a voltage across the parasitic inductance of the circuit, causing an overvoltage across the FWD. Because the reverse recovery current of the FWD decreases, i C The reverse recovery current decreases accordingly. At the moment when the rate of decrease of the reverse recovery current is the largest, the voltage overshoot across the FWD is the largest. After that, the FWD overshoot voltage decreases, and by time t4, the reverse recovery process of the FWD is basically over.

[0070] S102: Determine the intermediate parameters of the insulated gate bipolar transistor; and determine the collector current of the insulated gate bipolar transistor based on the intermediate parameters, the gate voltage of the insulated gate bipolar transistor, and the gate voltage threshold of the insulated gate bipolar transistor.

[0071] In some embodiments, the gate voltage of an insulated gate bipolar transistor is obtained by measuring using a gate voltage probe (or a low-voltage probe).

[0072] In some embodiments, before determining the collector current of the insulated-gate bipolar transistor (IGBT) based on the gate voltage and gate voltage threshold of the IGBT, the method further includes:

[0073] S1: Perform a static test on the insulated gate bipolar transistor to obtain the static gate voltage threshold.

[0074] S2: Perform a dynamic turn-on experiment on the insulated gate bipolar transistor to obtain a first relationship curve of the collector current versus time and a second relationship curve of the gate voltage versus time of the insulated gate bipolar transistor.

[0075] S3: Determine the moment when the collector current begins to increase from the first relationship curve, and use it as the target moment;

[0076] S4: Determine the gate voltage corresponding to the target time from the second relationship curve, and use it as the dynamic gate voltage threshold;

[0077] S5: The static gate voltage threshold and the dynamic gate voltage threshold are weighted and summed to obtain the gate voltage threshold of the insulated gate bipolar transistor.

[0078] In some embodiments, the static test can specifically be a gate voltage threshold test. The gate voltage threshold test is performed by applying a voltage bias vcc between the collector C and the emitter E, and applying a voltage bias vgg between the gate G and the emitter E, gradually increasing vgg until the collector current i of the IGBT is reached. C When increased to a specific value (e.g., 10mA), the voltage between the gate G and the emitter E becomes the static gate voltage threshold.

[0079] In some embodiments, the weight of the static gate voltage threshold can be set to 0.5, the weight of the dynamic gate voltage threshold can be set to 0.5, and then the static gate voltage threshold and the dynamic gate voltage threshold can be weighted and summed.

[0080] In some embodiments, see Figure 3 As shown, in Figure 3 At time t1, i C It starts increasing from 0, so t1 is the target time, and u corresponds to t1. GE The value is the dynamic gate voltage threshold U. T1 curve i C It refers to the first relationship curve, curve u. GE That is the second relationship curve.

[0081] In some embodiments, intermediate parameters of the insulated-gate bipolar transistor (IGBT) are determined; and based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT, the collector current of the IGBT is determined, specifically including:

[0082] The intermediate parameters and collector current of the insulated gate bipolar transistor are determined according to the following formula:

[0083]

[0084] Among them, i C The value represents the collector current of an insulated-gate bipolar transistor, λ represents an intermediate parameter, and u GE U represents the gate voltage of an insulated-gate bipolar transistor. T α represents the gate voltage threshold of an insulated-gate bipolar transistor. pnp μ represents the transfer factor of an insulated-gate bipolar transistor. n The insulated-gate bipolar transistor (IGBT) has electron mobility w1, channel width c, and other properties. oxThe value represents the channel capacitance of an insulated-gate bipolar transistor (IGBT), and L represents the channel length of the IGBT.

[0085] In some embodiments, the transfer factor α of an insulated gate bipolar transistor pnp It is a parameter related to the base region width of an insulated gate bipolar transistor.

[0086] S103: Determine the collector-emitter voltage of the freewheeling diode chip based on the collector current of the insulated gate bipolar transistor.

[0087] In some embodiments, determining the collector-emitter voltage of the freewheeling diode chip based on the collector current of the insulated-gate bipolar transistor specifically includes:

[0088] S1: Determine the freewheeling diode current based on the collector current of the insulated gate bipolar transistor;

[0089] S2: Determine the collector-emitter voltage of the freewheeling diode chip based on the freewheeling diode current.

[0090] In some embodiments, determining the freewheeling diode current based on the collector current of the insulated-gate bipolar transistor specifically includes:

[0091] Determine the freewheeling diode current using the following formula:

[0092] i F =I L -i C (2)

[0093] Among them, i F I represents the freewheeling diode current. L i represents the load current of the load device. C This represents the collector current of an insulated-gate bipolar transistor.

[0094] In some embodiments, determining the collector-emitter voltage of the freewheeling diode chip based on the freewheeling diode current specifically includes:

[0095] The collector-emitter voltage of the freewheeling diode chip is determined according to the following formula:

[0096] u F,chip =U F0 +R on ·i F (3)

[0097] Among them, u F,chip U represents the collector-emitter voltage of the freewheeling diode chip. F0 R represents the on-state voltage threshold of the freewheeling diode chip. onIndicates the on-resistance of the freewheeling diode chip, i F This indicates the current of the freewheeling diode.

[0098] In some embodiments, the on-voltage threshold and on-resistance of the freewheeling diode chip are parameters related to the physical properties of the freewheeling diode and can be obtained from the freewheeling diode parameter specification table.

[0099] In some embodiments, u can be determined based on Formula 3. F,chip It concerns the freewheeling diode current i F The function can be represented as u F,chip =f(i F This function represents the forward characteristic of the freewheeling diode.

[0100] In some embodiments, see Figure 4 As shown, Figure 4 This indicates the forward bias characteristic of the freewheeling diode, u F,chip U represents the collector-emitter voltage of the freewheeling diode chip. F0 R represents the on-state voltage threshold of the freewheeling diode chip. on Indicates the on-resistance of the freewheeling diode chip, i F This indicates the current of the freewheeling diode. When the applied voltage exceeds U... F0 When the freewheeling diode is turned on, U F0 This can also be referred to as the "built-in potential" of the p+n junction of a freewheeling diode. The i of the freewheeling diode... F With u F,chip As the nonlinearity increases, within a relatively small interval, the slope k of the curve corresponding to that interval is approximately equal to...

[0101] S104: Determine the collector-emitter voltage of the insulated gate bipolar transistor based on the gate voltage of the insulated gate bipolar transistor and the collector-emitter voltage of the freewheeling diode chip.

[0102] In some embodiments, determining the collector-emitter voltage of the insulated-gate bipolar transistor (IGBT) based on the gate voltage of the IGBT and the collector-emitter voltage of the freewheeling diode chip specifically includes:

[0103] S1: Based on the gate voltage of the insulated gate bipolar transistor, obtain the voltage value of the loop parasitic inductance device of the target circuit;

[0104] S2: Determine the collector-emitter voltage of the insulated gate bipolar transistor based on the voltage value of the parasitic inductor in the target circuit and the collector-emitter voltage of the freewheeling diode chip.

[0105] In some embodiments, the voltage value of the loop parasitic inductance device of the target circuit is obtained based on the gate voltage of the insulated gate bipolar transistor, specifically including:

[0106] The voltage value of the loop parasitic inductance device in the target circuit is obtained according to the following formula:

[0107]

[0108] Among them, u s L represents the voltage value of the parasitic inductance device in the loop of the target circuit. s i represents the value of the loop parasitic inductance of the target circuit. C The value represents the collector current of an insulated-gate bipolar transistor, t represents time, λ represents intermediate parameters, and u represents the collector current. GE U represents the gate voltage of an insulated-gate bipolar transistor. T α represents the gate voltage threshold of an insulated-gate bipolar transistor. pnp This represents the transfer factor of an insulated-gate bipolar transistor.

[0109] In some embodiments, the loop parasitic inductance value of the target circuit can be determined by the following formula:

[0110] L s =L′ s,1 +L′ s,2 +L′ s,F (5)

[0111] Among them, L' s,1 L' represents the inductance value of the parasitic inductance device in an insulated-gate bipolar transistor. s,2 L' represents the inductance value of the parasitic inductance device in the circuit of the freewheeling diode. s,F This indicates the inductance value of the parasitic inductor in the freewheeling diode package.

[0112] In some embodiments, the collector-emitter voltage of the insulated-gate bipolar transistor is determined based on the voltage value of the parasitic inductance device in the target circuit and the collector-emitter voltage of the freewheeling diode chip, specifically including:

[0113] Calculate the collector-emitter voltage of an insulated-gate bipolar transistor using the following formula:

[0114] u CE =U DC +u F,chip -u s (6)

[0115] Among them, U DC This represents the DC capacitor voltage.

[0116] In some embodiments, substituting Formula 1, Formula 2, Formula 3, and Formula 4 into Formula 6 can transform Formula 6 into the following form:

[0117]

[0118] Among them, u CE U represents the collector-emitter voltage of an insulated-gate bipolar transistor. DC U represents the DC capacitor voltage. F,chip This represents the collector-emitter voltage of the freewheeling diode chip, u. s U represents the voltage value of the parasitic inductance device in the loop of the target circuit. F0 R represents the on-state voltage threshold of the freewheeling diode chip. on I represents the on-resistance of the freewheeling diode chip. L The load current is represented by λ, and the intermediate parameter is u. GE U represents the gate voltage of an insulated-gate bipolar transistor. T α represents the gate voltage threshold of an insulated-gate bipolar transistor. pnp L represents the transfer factor of an insulated-gate bipolar transistor. s The value of the loop parasitic inductance of the target circuit is represented by t, where t represents time.

[0119] In some embodiments, the starting time of Formula 7 is i C The moment when the rise begins corresponds to Figure 3 At time t1 in the data.

[0120] In some embodiments, after determining the collector-emitter voltage of the insulated gate bipolar transistor based on the gate voltage of the insulated gate bipolar transistor and the collector-emitter voltage of the freewheeling diode chip, the method further includes: calculating the turn-on power loss using the collector-emitter voltage.

[0121] In some embodiments, the power loss during activation can be calculated using the following formula:

[0122] P = u CE ·i C (8)

[0123] Where P represents the turn-on power loss.

[0124] Based on the above embodiments, a correspondence between the gate voltage and collector current of a transient insulated-gate bipolar transistor (IGBT) can be established, as well as a correspondence between the gate voltage and collector-emitter voltage of the transient IGBT. The collector-emitter voltage can be quickly determined using the readily available gate voltage. This method can be applied to online monitoring of IGBT devices, facilitating the acquisition of collector current and collector-emitter voltage from the low-voltage side of the gate. This provides data support for analyzing the safe operating range of IGBT devices within the converter unit and for maximizing the use of IGBT devices.

[0125] In a specific scenario example, see Figure 5 As shown, the collector-emitter voltage of an insulated-gate bipolar transistor can be determined by following these steps:

[0126] Step 1: Calculate the static gate voltage threshold U obtained from the static test. T2 The dynamic gate voltage threshold U obtained from the dynamic turn-on experiment T1 The average value is used to obtain the gate voltage threshold U of the insulated gate bipolar transistor. T ;

[0127] Step 2: Gate voltage u based on insulated-gate bipolar transistor GE And U T The collector current i of the insulated gate bipolar transistor is obtained. C The waveform estimation results;

[0128] Step 3: Construct the collector-emitter voltage function u of the FWD chip based on the forward characteristics of the freewheeling diode (Formula 3). F,chip =f(i F );

[0129] Step 4: Based on u F,chip DC capacitor voltage U DC The parasitic inductance value L of the target circuit s Load current I L Get based on i C u CE Waveform estimation results; u CE This represents the collector-emitter voltage of an insulated-gate bipolar transistor.

[0130] Step 5: Combine the results of Step 2 and Step 4 to obtain the result based on u. GE u CE Waveform estimation results.

[0131] Based on the above method for determining the transient collector-emitter voltage during IGBT turn-on, this specification also provides an embodiment of a device for determining the transient collector-emitter voltage during IGBT turn-on, see reference. Figure 6As shown, the device for determining the transient collector-emitter voltage during IGBT turn-on specifically includes the following modules:

[0132] Construction module 601 is used to construct a target circuit; wherein, the target circuit includes an insulated gate bipolar transistor and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip;

[0133] The first determining module 602 determines the intermediate parameters of the insulated gate bipolar transistor (IGBT); and determines the collector current of the IGBT based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT.

[0134] The second determining module 603 is used to determine the collector-emitter voltage of the freewheeling diode chip based on the collector current of the insulated gate bipolar transistor.

[0135] The third determining module 604 is used to determine the collector-emitter voltage of the insulated gate bipolar transistor based on the gate voltage of the insulated gate bipolar transistor and the collector-emitter voltage of the freewheeling diode chip.

[0136] In some embodiments, the first determining module 602 is specifically used to determine the intermediate parameters and collector current of the insulated gate bipolar transistor according to the following formula:

[0137]

[0138] Among them, i C The value represents the collector current of an insulated-gate bipolar transistor, λ represents an intermediate parameter, and u GE U represents the gate voltage of an insulated-gate bipolar transistor. T α represents the gate voltage threshold of an insulated-gate bipolar transistor. pnp μ represents the transfer factor of an insulated-gate bipolar transistor. n The insulated-gate bipolar transistor (IGBT) has electron mobility w1, channel width c, and other properties. ox The value represents the channel capacitance of an insulated-gate bipolar transistor (IGBT), and L represents the channel length of the IGBT.

[0139] In some embodiments, the second determining module 603 is specifically used to determine the freewheeling diode current based on the collector current of the insulated gate bipolar transistor; and to determine the collector-emitter voltage of the freewheeling diode chip based on the freewheeling diode current.

[0140] In some embodiments, the third determining module 604 is specifically used to obtain the voltage value of the loop parasitic inductor of the target circuit based on the gate voltage of the insulated gate bipolar transistor; and to determine the collector-emitter voltage of the insulated gate bipolar transistor based on the voltage value of the loop parasitic inductor of the target circuit and the collector-emitter voltage of the freewheeling diode chip.

[0141] It should be noted that the units, devices, or modules described in the above embodiments can be implemented by computer chips or physical entities, or by products with certain functions. For ease of description, the above devices are described by dividing them into various modules according to their functions. Of course, in implementing this specification, the functions of each module can be implemented in one or more software and / or hardware, or the module that implements the same function can be implemented by a combination of multiple sub-modules or sub-units, etc. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and there may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection between the devices or units shown or discussed can be through some interfaces, and the indirect coupling or communication connection between devices or units can be electrical, mechanical, or other forms.

[0142] This specification also provides a computer storage medium for a method of determining the transient collector-emitter voltage of an IGBT during turn-on. The computer storage medium stores computer program instructions that, when executed, implement the following: constructing a target circuit; wherein the target circuit includes an insulated-gate bipolar transistor (IGBT) and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip; determining intermediate parameters of the IGBT; and determining the collector current of the IGBT based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT; determining the collector-emitter voltage of the freewheeling diode chip based on the collector current of the IGBT; and determining the collector-emitter voltage of the IGBT based on the gate voltage of the IGBT and the collector-emitter voltage of the freewheeling diode chip.

[0143] In this embodiment, the storage medium includes, but is not limited to, Random Access Memory (RAM), Read-Only Memory (ROM), cache, hard disk drive (HDD), or memory card. The memory can be used to store computer program instructions. The network communication unit can be an interface configured according to standards specified in the communication protocol for network connection communication.

[0144] In this embodiment, the specific functions and effects implemented by the program instructions stored in the computer storage medium can be explained in comparison with other implementation methods, and will not be repeated here.

[0145] This specification also provides a server, including a processor and a memory for storing processor-executable instructions. In specific implementations, the processor can perform the following steps according to the instructions: obtaining the gate voltage of an insulated-gate bipolar transistor (IGBT); constructing a target circuit; wherein the target circuit includes an IGBT and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip; determining intermediate parameters of the IGBT; and determining the collector current of the IGBT based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT; determining the collector-emitter voltage of the freewheeling diode chip based on the collector current of the IGBT; and determining the collector-emitter voltage of the IGBT based on the gate voltage of the IGBT and the collector-emitter voltage of the freewheeling diode chip.

[0146] To execute the above instructions more accurately, please refer to... Figure 7 As shown in the embodiments of this specification, another specific server is also provided, wherein the server includes a network communication port 701, a processor 702, and a memory 703. The above structures are connected by internal cables so that the various structures can perform specific data interaction.

[0147] Specifically, the network communication port 701 can be used to construct a target circuit; the target circuit includes an insulated gate bipolar transistor and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip.

[0148] The processor 702 can specifically be used to determine the intermediate parameters of the insulated-gate bipolar transistor (IGBT); and based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT, determine the collector current of the IGBT; based on the collector current of the IGBT, determine the collector-emitter voltage of the freewheeling diode chip; and based on the gate voltage of the IGBT and the collector-emitter voltage of the freewheeling diode chip, determine the collector-emitter voltage of the IGBT.

[0149] The memory 703 can be used to store the corresponding instruction program.

[0150] In this embodiment, the network communication port 701 can be a virtual port bound to different communication protocols, thereby enabling the sending or receiving of different data. For example, the network communication port can be a port responsible for web data communication, a port responsible for FTP data communication, or a port responsible for email data communication. Furthermore, the network communication port can also be a physical communication interface or communication chip. For example, it can be a wireless mobile network communication chip, such as GSM or CDMA; it can also be a Wi-Fi chip; or it can be a Bluetooth chip.

[0151] In this embodiment, the processor 702 can be implemented in any suitable manner. For example, the processor can take the form of a microprocessor or processor and a computer-readable medium storing computer-readable program code (e.g., software or firmware) executable by the (micro)processor, logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers, and embedded microcontrollers, etc. This specification is not limiting.

[0152] In this embodiment, the memory 703 may include multiple layers. In a digital system, anything that can store binary data can be a memory. In an integrated circuit, a circuit with storage function but no physical form is also called a memory, such as RAM, FIFO, etc. In a system, a storage device with a physical form is also called a memory, such as a memory stick, TF card, etc.

[0153] While this specification provides the steps of operation for the methods described in the embodiments or flowcharts, more or fewer steps may be included based on conventional or non-inventive means. The order of steps listed in the embodiments is merely one possible order of execution among many steps and does not represent the only possible order. In actual device or client product execution, the methods shown in the embodiments or drawings may be executed sequentially or in parallel (e.g., in a parallel processor or multi-threaded processing environment, or even a distributed data processing environment). The terms "comprising," "including," or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, product, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, product, or apparatus. Without further limitations, the presence of other identical or equivalent elements in a process, method, product, or apparatus that includes said elements is not excluded. The terms "first," "second," etc., are used to denote names and do not indicate any particular order.

[0154] Those skilled in the art will also know that, besides implementing the controller using purely computer-readable program code, the same functions can be achieved by logically programming the method steps, making the controller function as logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers (PLCs), and embedded microcontrollers. Therefore, such a controller can be considered a hardware component, and the devices within it used to implement various functions can also be considered structures within that hardware component. Alternatively, the devices used to implement various functions can be considered as both software modules implementing the method and structures within a hardware component.

[0155] This specification can be described in the general context of computer-executable instructions that are executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, classes, etc., that perform a specific task or implement a specific abstract data type. This specification can also be practiced in distributed computing environments, where tasks are performed by remote processing devices connected via a communication network. In distributed computing environments, program modules can reside in local and remote computer storage media, including storage devices.

[0156] As can be seen from the above description of the embodiments, those skilled in the art can clearly understand that this specification can be implemented by means of software plus necessary general-purpose hardware platforms. Based on this understanding, the technical solutions of this specification can essentially be embodied in the form of a software product. This computer software product can be stored in a storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, mobile terminal, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments of this specification.

[0157] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on its differences from other embodiments. This specification can be used in numerous general-purpose or special-purpose computer system environments or configurations. Examples include: personal computers, server computers, handheld or portable devices, tablet devices, multiprocessor systems, microprocessor-based systems, set-top boxes, programmable electronic devices, network PCs, minicomputers, mainframe computers, and distributed computing environments including any of the above systems or devices, etc.

[0158] Although this specification has been described by way of examples, those skilled in the art will recognize that many variations and modifications are possible without departing from the spirit of this specification, and it is intended that the appended claims cover such variations and modifications without departing from the spirit of this specification.

Claims

1. A method for determining the transient collector-emitter voltage during IGBT turn-on, characterized in that, include: Construct a target circuit; wherein the target circuit includes an insulated gate bipolar transistor and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip; The intermediate parameters of the insulated gate bipolar transistor (IGBT) are determined; and the collector current of the IGBT is determined based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT; wherein the intermediate parameters are calculated based on the intermediate parameters of the IGBT, electron mobility, channel width, channel capacitance, and channel length. The collector-emitter voltage of the freewheeling diode chip is determined based on the collector current of the insulated gate bipolar transistor. The voltage value of the loop parasitic inductance device of the target circuit is obtained based on the gate voltage of the insulated gate bipolar transistor. The collector-emitter voltage of the insulated gate bipolar transistor is determined based on the voltage value of the parasitic inductance device in the target circuit and the collector-emitter voltage of the freewheeling diode chip. The step of determining the collector-emitter voltage of the insulated-gate bipolar transistor based on the voltage value of the parasitic inductance device in the target circuit and the collector-emitter voltage of the freewheeling diode chip includes: The collector-emitter voltage of the insulated-gate bipolar transistor is determined according to the following formula: in, This represents the collector-emitter voltage of an insulated-gate bipolar transistor. Indicates the DC capacitor voltage. This indicates the collector-emitter voltage of the freewheeling diode chip. This represents the voltage value of the parasitic inductance device in the loop of the target circuit. This indicates the on-state voltage threshold of the freewheeling diode chip. This indicates the on-resistance of the freewheeling diode chip. Indicates the load current. Indicates intermediate parameters. This represents the gate voltage of an insulated-gate bipolar transistor. This indicates the gate voltage threshold of an insulated-gate bipolar transistor. This represents the transfer factor of an insulated-gate bipolar transistor. This represents the value of the loop parasitic inductance of the target circuit. Indicates time.

2. The method according to claim 1, characterized in that, Determine the intermediate parameters of the insulated-gate bipolar transistor (IGBT); and based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT, determine the collector current of the IGBT, including: The intermediate parameters and collector current of the insulated gate bipolar transistor are determined according to the following formula: in, This represents the collector current of an insulated-gate bipolar transistor. Indicates intermediate parameters. This represents the gate voltage of an insulated-gate bipolar transistor. This indicates the gate voltage threshold of an insulated-gate bipolar transistor. This represents the transfer factor of an insulated-gate bipolar transistor. This represents the electron mobility of an insulated-gate bipolar transistor. This indicates the channel width of an insulated-gate bipolar transistor. This represents the channel capacitance of an insulated-gate bipolar transistor. This indicates the channel length of an insulated-gate bipolar transistor.

3. The method according to claim 1, characterized in that, Determining the collector-emitter voltage of the freewheeling diode chip based on the collector current of the insulated-gate bipolar transistor includes: The freewheeling diode current is determined based on the collector current of the insulated gate bipolar transistor. The collector-emitter voltage of the freewheeling diode chip is determined based on the freewheeling diode current.

4. The method according to claim 3, characterized in that, Determining the collector-emitter voltage of the freewheeling diode chip based on the freewheeling diode current includes: The collector-emitter voltage of the freewheeling diode chip is determined according to the following formula: in, This indicates the collector-emitter voltage of the freewheeling diode chip. This indicates the on-state voltage threshold of the freewheeling diode chip. This indicates the on-resistance of the freewheeling diode chip. This indicates the current of the freewheeling diode.

5. The method according to claim 1, characterized in that, Based on the gate voltage of the insulated-gate bipolar transistor, the voltage value of the loop parasitic inductance device of the target circuit is obtained, including: The voltage value of the loop parasitic inductance device in the target circuit is obtained according to the following formula: in, This represents the voltage value of the parasitic inductance device in the loop of the target circuit. This represents the value of the loop parasitic inductance of the target circuit. This represents the collector current of an insulated-gate bipolar transistor. Indicates time, Indicates intermediate parameters. This represents the gate voltage of an insulated-gate bipolar transistor. This indicates the gate voltage threshold of an insulated-gate bipolar transistor. This represents the transfer factor of an insulated-gate bipolar transistor.

6. The method according to claim 1, characterized in that, Before determining the collector current of the insulated-gate bipolar transistor (IGBT) based on its gate voltage and gate voltage threshold, the method further includes: A static test was performed on the insulated gate bipolar transistor to obtain the static gate voltage threshold. A dynamic turn-on experiment was conducted on the insulated gate bipolar transistor (IGBT) to obtain a first curve showing the relationship between the collector current and time, and a second curve showing the relationship between the gate voltage and time. From the first relationship curve, determine the moment when the collector current begins to increase, and use it as the target moment; The gate voltage corresponding to the target time is determined from the second relationship curve and used as the dynamic gate voltage threshold. The gate voltage threshold of the insulated gate bipolar transistor is obtained by weighted summation of the static gate voltage threshold and the dynamic gate voltage threshold.

7. A device for determining the transient collector-emitter voltage during IGBT turn-on, characterized in that, include: A construction module is used to construct a target circuit; wherein the target circuit includes an insulated gate bipolar transistor and a freewheeling diode; the freewheeling diode includes a freewheeling diode chip; The first determining module determines the intermediate parameters of the insulated gate bipolar transistor (IGBT); and determines the collector current of the IGBT based on the intermediate parameters, the gate voltage of the IGBT, and the gate voltage threshold of the IGBT; wherein the intermediate parameters are calculated based on the intermediate parameters of the IGBT, electron mobility, channel width, channel capacitance, and channel length. The second determining module is used to determine the collector-emitter voltage of the freewheeling diode chip based on the collector current of the insulated gate bipolar transistor. The third determining module is used to obtain the voltage value of the loop parasitic inductance device of the target circuit based on the gate voltage of the insulated gate bipolar transistor. The collector-emitter voltage of the insulated gate bipolar transistor is determined based on the voltage value of the parasitic inductance device in the target circuit and the collector-emitter voltage of the freewheeling diode chip. The step of determining the collector-emitter voltage of the insulated-gate bipolar transistor based on the voltage value of the parasitic inductance device in the target circuit and the collector-emitter voltage of the freewheeling diode chip includes: The collector-emitter voltage of the insulated-gate bipolar transistor is determined according to the following formula: in, This represents the collector-emitter voltage of an insulated-gate bipolar transistor. Indicates the DC capacitor voltage. This indicates the collector-emitter voltage of the freewheeling diode chip. This represents the voltage value of the parasitic inductance device in the loop of the target circuit. This indicates the on-state voltage threshold of the freewheeling diode chip. This indicates the on-resistance of the freewheeling diode chip. Indicates the load current. Indicates intermediate parameters. This represents the gate voltage of an insulated-gate bipolar transistor. This indicates the gate voltage threshold of an insulated-gate bipolar transistor. This represents the transfer factor of an insulated-gate bipolar transistor. This represents the value of the loop parasitic inductance of the target circuit. Indicates time.

8. A computer-readable storage medium, characterized in that, It stores computer instructions that, when executed by a processor, implement the steps of the method according to any one of claims 1 to 6.

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