Semiconductor device and module

Abstract

A capacitor (1) as one embodiment of a semiconductor device includes a substrate (10), a circuit layer (20), and a first resin body (30). The first resin body (30) is provided between an end portion of the substrate (10) and a first external electrode (27) and between the end portion of the substrate (10) and a second external electrode (28) in a plan view in a thickness direction (T). In the thickness direction (T), a front end on a side opposite to the substrate (10) of the first resin body (30) is located higher than a front end on the side opposite to the substrate (10) of the first external electrode (27) and the second external electrode (28). In a cross-sectional view in a direction perpendicular to the thickness direction (T), a side surface of the first resin body (30) on the side of the first external electrode (27) or the second external electrode (28) approaches a side surface of the first resin body (30) on the end portion side of the substrate (10) from the substrate (10) side toward the side opposite to the substrate (10), and the side surface of the first resin body (30) on the end portion side of the substrate (30) stands up with respect to a first main surface (10a) of the substrate (10).

Description

Technical Field

[0001] This invention relates to semiconductor devices and modules. Background Technology

[0002] As a representative capacitor element used in semiconductor integrated circuits, a well-known example is the MIM (Metal Insulator Metal) capacitor. A MIM capacitor is a capacitor with a parallel plate structure consisting of a lower electrode and an upper electrode sandwiching an insulator.

[0003] Patent Document 1 discloses an electronic component comprising: a circuit element formed on a substrate; at least one pair of terminal electrodes connected to the circuit element and disposed opposite to at least one surface; and a support body formed to protrude beyond the at least one pair of terminal electrodes and disposed in a region that does not overlap with the circuit element when viewed from above. Patent Document 1, as an example of the electronic component, describes a capacitor in which a lower electrode, a dielectric layer, a first electrode, a first protective layer, a second electrode, a second protective layer, terminal electrodes, and a support body are sequentially stacked on a substrate.

[0004] Patent Document 1: Japanese Patent No. 5445357

[0005] When mounting electronic components onto an external substrate using a surface mount machine (mounting machine), a load is applied in the thickness direction of the electronic component during substrate mounting. If an excessive load is applied, it becomes an impact force, potentially causing damage to the circuitry within the electronic component. According to Patent Document 1, the electronic component has a support body that protrudes beyond at least one pair of opposing terminal electrodes. In other words, the support body is formed to be thicker than the opposing pair of terminal electrodes. Therefore, by bearing, dispersing, and mitigating externally applied loads, this support body can prevent mechanical damage to the electronic component that may occur during mounting.

[0006] However, in the electronic component described in Patent Document 1, the effect of mitigating the load applied to the surface of the component during installation is insufficient, so the component may be damaged due to the load transmitted from the support. Summary of the Invention

[0007] This invention was made to solve the aforementioned problems, and its object is to provide a semiconductor device that suppresses element breakage even when a load is applied. Furthermore, an object of this invention is to provide a module incorporating the aforementioned semiconductor device.

[0008] The semiconductor device of the present invention includes: a substrate having a first main surface and a second main surface opposing each other in a thickness direction; a circuit layer disposed on the first main surface of the substrate; and a first resin body. The circuit layer includes: a first electrode layer disposed on the substrate side; a second electrode layer disposed opposite to the first electrode layer; a dielectric layer disposed between the first electrode layer and the second electrode layer in the thickness direction; a first external electrode extended to a surface of the circuit layer opposite to the substrate; and a second external electrode extended to a surface of the circuit layer opposite to the substrate and disposed isolated from the first external electrode. The first resin body, when viewed from above in the thickness direction, is respectively disposed between the end of the substrate and the first external electrode, and between the end of the substrate and the second external electrode. In the thickness direction, the front end of the first resin body on the side opposite to the substrate is located at a position higher than the front ends of the first external electrode and the second external electrode on the side opposite to the substrate. When viewed from a cross-section in a direction perpendicular to the thickness direction, the side of the first external electrode or the second external electrode of the first resin body moves from the substrate side toward the side of the substrate opposite to the substrate that approaches the side of the substrate end of the first resin body, and the side of the substrate end of the first resin body stands upright relative to the first main surface of the substrate.

[0009] The module of the present invention comprises: the semiconductor device of the present invention; and a wiring substrate having a first pad electrically connected to the first external electrode and a second pad electrically connected to the second external electrode.

[0010] According to the present invention, a semiconductor device can be provided that suppresses element breakage even when a load is applied. Furthermore, according to the present invention, a module incorporating the above-described semiconductor device can be provided. Attached Figure Description

[0011] Figure 1-1 This is a plan view illustrating an example of a capacitor according to Embodiment 1 of the present invention.

[0012] Figure 1-2 It means and Figure 1-1 A cross-sectional schematic diagram of the portion corresponding to line segment A1-A2 in the diagram.

[0013] Figure 1-3 It means and Figure 1-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0014] Figure 2-1 This is a cross-sectional schematic diagram showing the state in which a load is applied to a first resin body in a capacitor having the structure of the present invention.

[0015] Figure 2-2 This is a cross-sectional schematic diagram showing the state in which a load is applied to a first resin body in a capacitor with an existing structure.

[0016] Figure 3 This is a plan view showing a modified example of the capacitor according to Embodiment 1 of the present invention.

[0017] Figure 4-1 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming an insulating layer.

[0018] Figure 4-2 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming the first electrode layer.

[0019] Figure 4-3 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a dielectric layer.

[0020] Figure 4-4 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming the second electrode layer.

[0021] Figure 4-5 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a moisture-resistant protective layer.

[0022] Figure 4-6 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a resin protective layer.

[0023] Figure 4-7 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a seed layer.

[0024] Figure 4-8 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming the first coating and the second coating.

[0025] Figure 4-9 This is a cross-sectional schematic diagram used to illustrate an example of the process of removing a portion of the seed layer.

[0026] Figure 4-10 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a photosensitive resin film.

[0027] Figure 4-11 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming the first resin body.

[0028] Figure 5 This is a cross-sectional schematic diagram showing the module of Embodiment 1 of the present invention.

[0029] Figure 6 This is a cross-sectional schematic diagram showing the state in which molding resin is provided in the module of Embodiment 1 of the present invention.

[0030] Figure 7-1 This is a plan view illustrating an example of a capacitor according to Embodiment 2 of the present invention.

[0031] Figure 7-2 It means and Figure 7-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0032] Figure 8-1 This is a plan view illustrating an example of the capacitor according to Embodiment 3 of the present invention.

[0033] Figure 8-2 It means and Figure 8-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0034] Figure 9-1 This is a plan view illustrating an example of the capacitor according to Embodiment 4 of the present invention.

[0035] Figure 9-2 It means and Figure 9-1 A cross-sectional schematic diagram of the portion corresponding to line segment A1-A2 in the diagram.

[0036] Figure 10-1 This is a plan view illustrating an example of the capacitor according to Embodiment 5 of the present invention.

[0037] Figure 10-2 It means and Figure 10-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0038] Figure 11-1 This is a plan view showing a modified example of the capacitor according to Embodiment 5 of the present invention.

[0039] Figure 11-2 It means and Figure 11-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0040] Figure 12-1 This is a plan view illustrating an example of the capacitor according to Embodiment 6 of the present invention.

[0041] Figure 12-2 It means and Figure 12-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram. Detailed Implementation

[0042] The semiconductor device and module of the present invention will be described below.

[0043] However, the present invention is not limited to the following structures and can be appropriately modified and applied without changing the spirit of the invention. Furthermore, structures obtained by combining two or more of the preferred structures of the present invention described below are also part of the present invention.

[0044] The embodiments shown below are illustrative, and of course, parts of the structure shown in different embodiments can be replaced or combined. In Embodiment 2 and thereafter, matters common to Embodiment 1 are omitted, and only the differences are described. In particular, the same effects based on the same structure are not mentioned sequentially in each embodiment.

[0045] In the following description, unless otherwise specified, the various embodiments are referred to as "semiconductor device of the present invention" and "module of the present invention". The shape and arrangement of the semiconductor device, module and constituent elements of the present invention are not limited to the examples shown in the figures.

[0046] Furthermore, as one embodiment of the semiconductor device of the present invention, a capacitor will be used as an example for description below. The semiconductor device of the present invention may be the capacitor itself (i.e., a capacitor element) or a device that includes a capacitor.

[0047] [Implementation Method 1]

[0048] The semiconductor device of the present invention includes a substrate, a circuit layer, and a first resin body. In the semiconductor device of the present invention, the first resin body, when viewed from above in the thickness direction, is respectively disposed between an end of the substrate and a first external electrode, and between an end of the substrate and a second external electrode. In the thickness direction, the front end of the first resin body on the side opposite to the substrate is located at a position higher than the front ends of the first and second external electrodes on the opposite side of the substrate. When viewed in cross-section in a direction perpendicular to the thickness direction, the side surface of the first resin body on the side of the first or second external electrode extends from the substrate side toward the side surface of the substrate opposite to the substrate, and the side surface of the first resin body on the side of the substrate opposite to the substrate stands upright relative to a first main surface of the substrate. In the semiconductor device of the present invention, the first resin body may also have: a first outer peripheral portion disposed along the end of the substrate between the end of the substrate and the first external electrode when viewed from above in the thickness direction, and a second outer peripheral portion disposed along the end of the substrate between the end of the substrate and the second external electrode when viewed from above in the thickness direction. An example of this will be described below as a capacitor according to Embodiment 1 of the present invention.

[0049] Figure 1-1 This is a plan view illustrating an example of a capacitor according to Embodiment 1 of the present invention. Figure 1-2 It means and Figure 1-1A cross-sectional schematic diagram of the portion corresponding to line segment A1-A2 in the diagram. Figure 1-3 It means and Figure 1-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0050] In this instruction manual, such as Figure 1-1 , Figure 1-2 as well as Figure 1-3 As shown, the length, width, and thickness directions of the capacitor (semiconductor device) are defined by arrows L, W, and T, respectively. Here, the length direction L, width direction W, and thickness direction T are orthogonal to each other.

[0051] like Figure 1-1 , Figure 1-2 as well as Figure 1-3 As shown, capacitor 1 includes a substrate 10, a circuit layer 20, and a first resin body 30.

[0052] The substrate 10 has a first main surface 10a and a second main surface 10b that are opposite each other in the thickness direction T. The first main surface 10a and the second main surface 10b are opposite each other in the thickness direction T.

[0053] Examples of semiconductors used as structural materials for substrate 10 include silicon (Si), silicon germanium (SiGe), and gallium arsenide (GaAs).

[0054] The resistivity of substrate 10 is preferably 10. -5 Ω·cm or more and 10 5 Below Ω·cm.

[0055] The dimension of the substrate 10 in the length direction L is preferably 200 μm or more and 600 μm or less.

[0056] The dimension of the substrate 10 in the width direction W is preferably 100 μm or more and 300 μm or less.

[0057] The thickness of the substrate 10 in the thickness direction T is preferably 50 μm or more and 250 μm or less.

[0058] A circuit layer 20 is disposed on the first main surface 10a of the substrate 10. The circuit layer 20 includes an insulating layer 21, a first electrode layer 22, a dielectric layer 23, a second electrode layer 24, a moisture-resistant protective layer 25, a resin protective layer 26, a first external electrode 27, and a second external electrode 28. Furthermore, in Embodiment 1, the circuit layer 20 is disposed on the entire surface of the first main surface 10a of the substrate 10, but it may also be disposed on a portion of the first main surface 10a of the substrate 10. In this case, the circuit layer 20 is preferably disposed at the central position of the first main surface 10a of the substrate 10, and more preferably at a position where the central axis of the substrate 10 is substantially aligned with the central axis of the circuit layer 20.

[0059] The dimension in the thickness direction T of the circuit layer 20 is preferably 5 μm or more and 70 μm or less. The dimension in the thickness direction T of the circuit layer 20 is determined by the dimension from the surface of the insulating layer 21 on the substrate 10 side to the surface of the outermost surface of the first external electrode 27 and the second external electrode 28 located on the side most opposite to the substrate 10.

[0060] An insulating layer 21 is disposed on the entire surface of the first main surface 10a of the substrate 10. Alternatively, the insulating layer 21 may be disposed on a portion of the first main surface 10a of the substrate 10, but it must be disposed in a region larger than the first electrode layer 22 and overlapping the entire region of the first electrode layer 22. For example, after temporarily forming an insulating layer on the entire surface of the first main surface 10a of the substrate 10 by oxidizing the first main surface 10a of the substrate 10 by thermal oxidation, or by sputtering or chemical vapor deposition (CVD), if a portion of the insulating layer is removed by etching, the insulating layer 21 can be disposed on a portion of the first main surface 10a of the substrate 10.

[0061] Examples of structural materials used as insulating layer 21 include silicon oxide (SiO, SiO2), silicon nitride (SiN), aluminum oxide (Al2O3), hafnium oxide (HfO2), tantalum oxide (Ta2O5), and zirconium oxide (ZrO2).

[0062] The insulating layer 21 can be a single-layer structure or a multi-layer structure comprising multiple layers made of the aforementioned materials.

[0063] The thickness of the insulating layer 21 in the thickness direction T is preferably 0.5 μm or more and 3 μm or less.

[0064] The first electrode layer 22 is disposed on the substrate 10 side of the circuit layer 20, specifically on the surface of the insulating layer 21 opposite to the substrate 10. Furthermore, the first electrode layer 22 is disposed at a position isolated from the end of the substrate 10. More specifically, the end of the first electrode layer 22 is located inside the end of the substrate 10. Figure 1-1 In the top view shown, the distance between the end of the first electrode layer 22 and the end of the substrate 10 is preferably 5 μm or more and 30 μm or less. Furthermore, the end of the first electrode layer 22 may also be disposed on the surface of the insulating layer 21 extending to the end of the substrate 10.

[0065] Examples of structural materials for the first electrode layer 22 include metals such as aluminum (Al), silicon (Si), copper (Cu), silver (Ag), gold (Au), nickel (Ni), chromium (Cr), and titanium (Ti). The structural material of the first electrode layer 22 may also be an alloy containing at least one of the aforementioned metals; specific examples include aluminum-silicon alloy (AlSi), aluminum-copper alloy (AlCu), and aluminum-silicon-copper alloy (AlSiCu).

[0066] The first electrode layer 22 can be a single-layer structure or a multi-layer structure containing multiple conductive layers made of the aforementioned materials.

[0067] The thickness of the first electrode layer 22 in the thickness direction T is preferably 0.3 μm or more and 10 μm or less, more preferably 0.5 μm or more and 5 μm or less.

[0068] The dielectric layer 23 is disposed between the first electrode layer 22 and the second electrode layer 24 in the thickness direction T, which is the direction orthogonal to the first main surface 10a of the substrate 10. In addition, the dielectric layer 23 is configured to cover the first electrode layer 22 in the portion except for the opening, and the end of the dielectric layer 23 is also disposed on the surface of the insulating layer 21 from the end of the first electrode layer 22 to the end of the substrate 10.

[0069] Examples of structural materials for the dielectric layer 23 include silicon nitride (SiN), silicon oxide (SiO, SiO2), aluminum oxide (Al2O3), hafnium oxide (HfO2), tantalum oxide (Ta2O5), and zirconium oxide (ZrO2). Preferably, the dielectric layer 23 comprises at least one of silicon nitride and silicon oxide.

[0070] The thickness of the dielectric layer 23 in the thickness direction T is preferably 0.02 μm or more and 4 μm or less.

[0071] The second electrode layer 24 is disposed opposite to the first electrode layer 22. More specifically, the second electrode layer 24 is disposed on the surface of the dielectric layer 23 on the side opposite to the substrate 10, sandwiching the dielectric layer 23 and opposing the first electrode layer 22.

[0072] Examples of structural materials for the second electrode layer 24 include metals such as aluminum (Al), silicon (Si), copper (Cu), silver (Ag), gold (Au), nickel (Ni), chromium (Cr), and titanium (Ti). The structural material for the second electrode layer 24 may also be an alloy containing at least one of the aforementioned metals; specific examples include aluminum-silicon alloy (AlSi), aluminum-copper alloy (AlCu), and aluminum-silicon-copper alloy (AlSiCu).

[0073] The second electrode layer 24 can be a single-layer structure or a multi-layer structure containing multiple conductive layers made of the aforementioned materials.

[0074] The thickness of the second electrode layer 24 in the thickness direction T is preferably 0.3 μm or more and 10 μm or less, more preferably 0.5 μm or more and 5 μm or less.

[0075] A capacitor element is constructed using a first electrode layer 22, a dielectric layer 23, and a second electrode layer 24. More specifically, the capacitance of the capacitor element is formed in the region where the first electrode layer 22 overlaps with the dielectric layer 23 and the second electrode layer 24.

[0076] A moisture-resistant protective layer 25 is configured to cover the dielectric layer 23 and the second electrode layer 24, except for the opening. By providing the moisture-resistant protective layer 25, the moisture resistance of the capacitor element, especially the dielectric layer 23, is improved.

[0077] Examples of structural materials used as the moisture-resistant protective layer 25 include silicon nitride (SiN) and silicon oxide (SiO2).

[0078] The thickness of the moisture-resistant protective layer 25 in the thickness direction T is preferably 0.5 μm or more and 3 μm or less.

[0079] A resin protective layer 26 is configured to cover the first electrode layer 22 and the second electrode layer 24. Here, the resin protective layer 26 is disposed on the surface of the moisture-resistant protective layer 25 opposite to the substrate 10. Furthermore, the ends of the resin protective layer 26 extend to the ends of the substrate 10, and openings are provided on the resin protective layer 26 at various locations, including positions overlapping with openings in the dielectric layer 23 and the moisture-resistant protective layer 25 (openings overlapping with the first electrode layer 22) and positions overlapping with openings in the moisture-resistant protective layer 25 (openings overlapping with the second electrode layer 24). By providing the resin protective layer 26, the capacitor elements, particularly the dielectric layer 23, are adequately protected from moisture.

[0080] Examples of resins used as structural materials for the resin protective layer 26 include polyimide resin, polybenzoxazole resin, benzocyclobutene resin, and resins in solder resists.

[0081] The thickness of the resin protective layer 26 in the thickness direction T is preferably 1 μm or more and 20 μm or less.

[0082] The first external electrode 27 is led out to the surface of the circuit layer 20 opposite to the substrate 10, and is isolated from the second external electrode 28. That is, the first external electrode 27 is located on the side of the first electrode layer 22 opposite to the substrate 10. Here, the first external electrode 27 is electrically connected to the first electrode layer 22. More specifically, the openings respectively provided in the dielectric layer 23, the moisture-resistant protective layer 25, and the resin protective layer 26 extend by communicating along the thickness direction T, and the first external electrode 27 is electrically connected to the first electrode layer 22 through these openings. In addition, the first external electrode 27 is located on the surface along the length direction L and the width direction W (see reference). Figure 1-1 It is isolated from the second electrode layer 24, and thus is not electrically connected to the second electrode layer 24.

[0083] The first external electrode 27 can be a single-layer structure or a multi-layer structure.

[0084] When the first external electrode 27 has a single-layer structure, the structural materials include, for example, gold (Au), silver (Ag), copper (Cu), palladium (Pd), nickel (Ni), titanium (Ti), aluminum (Al), and alloys containing at least one of these metals.

[0085] When the first external electrode 27 has a multilayer structure, it can also be as follows: Figure 1-2 as well as Figure 1-3 As shown, the first external electrode 27 has a seed layer 29a, a first plating layer 29b, and a second plating layer 29c sequentially from the substrate 10 side.

[0086] Seed layer 29a, which serves as the first external electrode 27, includes, for example, a laminate (Ti / Cu) of a conductive layer made of titanium (Ti) and a conductive layer made of copper (Cu).

[0087] For example, nickel (Ni) is a structural material used for the first plating layer 29b of the first external electrode 27.

[0088] Structural materials used as the second plating layer 29c of the first external electrode 27 include, for example, gold (Au) and tin (Sn).

[0089] The second external electrode 28 is led out to the surface of the circuit layer 20 opposite to the substrate 10, and is isolated from the first external electrode 27. That is, the second external electrode 28 is located on the side of the second electrode layer 24 opposite to the substrate 10. Here, the second external electrode 28 is electrically connected to the second electrode layer 24. More specifically, the openings respectively provided in the moisture-resistant protective layer 25 and the resin protective layer 26 extend by communicating along the thickness direction T, and the second external electrode 28 is electrically connected to the second electrode layer 24 through these openings. In addition, the second external electrode 28 is located on the surface along the length direction L and the thickness direction T (see reference). Figure 1-3It is isolated from the first electrode layer 22, and thus is not electrically connected to the first electrode layer 22.

[0090] The second external electrode 28 can be a single-layer structure or a multi-layer structure.

[0091] When the second external electrode 28 has a single-layer structure, the structural materials include, for example, gold (Au), silver (Ag), copper (Cu), palladium (Pd), nickel (Ni), titanium (Ti), aluminum (Al), and alloys containing at least one of these metals.

[0092] When the second external electrode 28 has a multilayer structure, it can also be as follows: Figure 1-2 as well as Figure 1-3 As shown, the second external electrode 28 has a seed layer 29a, a first plating layer 29b, and a second plating layer 29c sequentially from the substrate 10 side.

[0093] Seed layer 29a, which serves as the seed layer of the second external electrode 28, includes, for example, a laminate (Ti / Cu) of a conductive layer made of titanium (Ti) and a conductive layer made of copper (Cu).

[0094] For example, nickel (Ni) is used as a structural material for the first plating layer 29b of the second external electrode 28.

[0095] Examples of structural materials used for the second plating layer 29c of the second external electrode 28 include gold (Au) and tin (Sn).

[0096] The structural materials of the first external electrode 27 and the second external electrode 28 can be the same or different from each other.

[0097] like Figure 1-1 As shown, the first resin body 30 is disposed between the end of the substrate 10 and the first external electrode 27, and between the end of the substrate 10 and the second external electrode 28, respectively, when viewed from above in the thickness direction T. Here, the first resin body 30 is disposed on the surface of the circuit layer 20 on the side opposite to the substrate 10.

[0098] like Figure 1-2 As shown, in the thickness direction T, the front end of the first resin body 30 on the side opposite to the substrate 10 is located at a higher position than the front ends of the first external electrode 27 and the second external electrode 28 on the side opposite to the substrate 10. More specifically, in the thickness direction T, the front end of the first resin body 30 on the side opposite to the substrate 10 is higher than the line segment connecting the front ends of the first external electrode 27 and the second external electrode 28 on the side opposite to the substrate 10. Figure 1-3 The dashed line in the diagram is located on the side opposite to the substrate 10.

[0099] exist Figure 1-2as well as Figure 1-3 In this case, the outermost surface of the second external electrode 28 is uneven, but in the thickness direction T, the portion of the outermost surface of the second external electrode 28 located on the side most opposite to the substrate 10 is defined as the front end of the second external electrode 28 on the side opposite to the substrate 10. The same applies to the first external electrode 27.

[0100] like Figure 1-2 As shown, when viewed in cross-section perpendicular to the thickness direction T, the side surface of the first external electrode 27 or the second external electrode 28 of the first resin body 30 extends from the substrate 10 side toward the side opposite to the substrate 10, approaching the end side of the substrate 10 of the first resin body 30. That is, the cross-sectional shape of the first resin body 30 is a so-called conical shape, where the width decreases from the substrate 10 side toward the side opposite to the substrate 10. The side surface of the first external electrode 27 or the second external electrode 28 of the first resin body 30 can also be curved, as long as it extends from the substrate 10 side toward the side opposite to the substrate 10, approaching the end side of the substrate 10 of the first resin body 30.

[0101] And, as Figure 1-2 As shown, when viewed in cross-section perpendicular to the thickness direction T, the side surface of the end face of the substrate 10 of the first resin body 30 stands upright relative to the first main surface 10a of the substrate 10. Here, the front end of the side of the first resin body 30 opposite to the substrate 10 is an acute angle. Figure 1-2 As shown, the front end of the first resin body 30 on the side opposite to the substrate 10 is preferably sharp.

[0102] Furthermore, it is preferable that the side surface of the end side of the substrate 10 of the first resin body 30 is perpendicular (90°) to the first main surface 10a of the substrate 10, but it can also be tilted by about ±5° from the vertical (90°).

[0103] Furthermore, as long as when viewed in a cross-section perpendicular to the thickness direction T, the side surface of the first external electrode 27 or the second external electrode 28 extends from the substrate 10 side toward the side surface of the substrate 10 opposite to the substrate 10, and the side surface of the end side of the substrate 10 stands upright relative to the first main surface 10a of the substrate 10, then the front end of the first resin body 30 on the side opposite to the substrate 10 may not be an acute angle, and the front end may not be sharp. For example, it may be a shape in which the front end of the first resin body 30 on the side opposite to the substrate 10 is cut off, or it may be a shape with rounded corners at the front end.

[0104] Figure 2-1 This is a cross-sectional schematic diagram showing the state in which a load is applied to a first resin body in a capacitor having the structure of the present invention. Figure 2-2This is a cross-sectional schematic diagram showing the state in which a load is applied to a first resin body in a capacitor with an existing structure.

[0105] Because the first resin body 30 protrudes from the circuit layer 20, for example, when mounting the capacitor 1 onto the wiring substrate, the first resin body 30 contacts the wiring substrate side (e.g., the upper surface of the wiring substrate, pads, solder, etc.) before the first external electrode 27 and the second external electrode 28. Therefore, a load is applied to the first resin body 30, suppressing the load applied to the first external electrode 27 and the second external electrode 28. At this time, as... Figure 2-1 As shown by the dashed lines, the first resin body 30 has a conical shape, and the side of the first resin body 30 on the end face of the substrate 10 stands upright, thereby causing the first resin body 30 to move towards the end face of the substrate 10 during the pressing of the capacitor element by the mounting machine (in the direction of the end face of the substrate 10). Figure 2-1 Lateral deformation (center to the left). The result is that, compared to the setting with... Figure 2-2 Compared to the case of the first resin body 30 with the shape shown, the load is suppressed from being transferred to the dielectric layer 23 via the first resin body 30, the resin protective layer 26, and the moisture-resistant protective layer 25, thus suppressing damage to the capacitor element, especially damage to the dielectric layer 23. This effect is also obtained when the capacitor 1 is mounted on the plate from the circuit layer 20 side.

[0106] In the thickness direction T, the protrusion dimension of the first resin body 30 relative to the circuit layer 20 is preferably 50 μm or less.

[0107] exist Figure 1-1 In this embodiment, the first resin body 30 has a first outer peripheral portion 30a disposed along the end of the substrate 10 between the end of the substrate 10 and the first external electrode 27 when viewed from the thickness direction T, and a second outer peripheral portion 30b disposed along the end of the substrate 10 between the end of the substrate 10 and the second external electrode 28 when viewed from the thickness direction T. Here, when viewed from the thickness direction T, the first outer peripheral portion 30a is disposed around the first external electrode 27, along both ends of the substrate 10 extending in the length direction L, and the second outer peripheral portion 30b is disposed around the second external electrode 28, along both ends of the substrate 10 extending in the length direction L.

[0108] Figure 3 This is a plan view showing a modified example of the capacitor according to Embodiment 1 of the present invention.

[0109] exist Figure 3 In the capacitor 1A shown, when viewed from above in the thickness direction T, a first outer peripheral portion 30a is provided around the first outer electrode 27, extending along one end of the substrate 10 in the width direction W, and a second outer peripheral portion 30b is provided around the second outer electrode 28, extending along the other end of the substrate 10 in the width direction W.

[0110] Alternatively, when viewed from above in the thickness direction T, the first outer peripheral portion 30a is disposed around the first external electrode 27, extending along both ends of the substrate 10 in the length direction L and one end in the width direction W, and the second outer peripheral portion 30b is disposed around the second external electrode 28, extending along both ends of the substrate 10 in the length direction L and the other end in the width direction W. In this case, the portion of the substrate 10 extending along the length direction L and the portion extending along the width direction W can be connected or separated.

[0111] As explained earlier, it is preferable that the first resin body 30 is arranged symmetrically when viewed from above in the thickness direction T. By symmetrically arranging the first resin body 30, for example, when mounting the capacitor 1 on the wiring substrate, the first resin body 30 can bear the load and stably hold the substrate 10 and the circuit layer 20 on the wiring substrate. This effect is also obtained when the capacitor 1 is placed on the plate from the circuit layer 20 side.

[0112] Preferably, the indentation elastic modulus of the first resin body 30 is lower than that of the dielectric layer 23. In this case, the first resin body 30 is more flexible than the dielectric layer 23, thus it is easier to use the first resin body 30 to bear the load, and the load applied to the capacitor element, especially the dielectric layer 23, is effectively suppressed. The indentation elastic modulus of the first resin body 30 is preferably 20 GPa or less.

[0113] The indentation modulus can be determined, for example, by nanoindentation.

[0114] The Young's modulus of the first resin body 30 is preferably 20 GPa or less. In this case, the flexibility of the first resin body 30 is sufficiently high, so it is easy to bear the load using the first resin body 30, and the load applied to the capacitor element is sufficiently suppressed. In addition, the Young's modulus of the first resin body 30 is more preferably 0.5 GPa or more and 20 GPa or less.

[0115] Young's modulus is determined, for example, by a tensile test.

[0116] Preferably, the first resin body 30 comprises at least one resin selected from the group consisting of resin in solder resist, polyimide resin, polyimide amide resin, and epoxy resin.

[0117] The first resin body 30 is preferably a cured product of a photosensitive resin.

[0118] An example of a capacitor as described in Embodiment 1 of the present invention. Figure 1-1 , Figure 1-2 as well as Figure 1-3 The capacitor 1 shown is manufactured, for example, by the following method. Figure 4-1 , Figure 4-2 , Figure 4-3 , Figure 4-4 , Figure 4-5 , Figure 4-6 , Figure 4-7 , Figure 4-8 , Figure 4-9 , Figure 4-10 as well as Figure 4-11 This is a cross-sectional schematic diagram illustrating an example of the method for manufacturing a capacitor according to Embodiment 1 of the present invention.

[0119] <Formation of Insulation Layer>

[0120] Figure 4-1 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming an insulating layer.

[0121] like Figure 4-1 As shown, for example, the insulating layer 21 is formed on the first main surface 10a of the substrate 10 by thermal oxidation, sputtering, or chemical vapor deposition.

[0122] <Formation of the first electrode layer>

[0123] Figure 4-2 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming the first electrode layer.

[0124] For example, a conductive layer made of the structural material of the first electrode layer 22 is formed on the surface of the insulating layer 21 on the side opposite to the substrate 10 by sputtering. Then, the conductive layer is patterned by combining photolithography and etching to form a conductive layer. Figure 4-2 The first electrode layer 22 is shown. More specifically, the first electrode layer 22 is formed at a location isolated from the end of the substrate 10.

[0125] <Formation of the Dielectric Layer>

[0126] Figure 4-3 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a dielectric layer.

[0127] For example, a layer composed of the structural material of the dielectric layer 23 is formed to cover the first electrode layer 22 by sputtering or chemical vapor deposition. Then, the layer is patterned, for example, by a combination of photolithography and etching, to form... Figure 4-3 The dielectric layer 23 is shown. More specifically, the dielectric layer 23 is formed with an opening that exposes a portion of the first electrode layer 22.

[0128] <Formation of the second electrode layer>

[0129] Figure 4-4This is a cross-sectional schematic diagram used to illustrate an example of the process of forming the second electrode layer.

[0130] For example, a conductive layer composed of the structural material of the second electrode layer 24 can be formed by sputtering. Figure 4-3 The surface of the structure shown is on the side opposite to the substrate 10. Then, for example, the conductive layer is patterned by combining photolithography and etching to form... Figure 4-4 The second electrode layer 24 is shown. More specifically, the second electrode layer 24 is formed opposite to the first electrode layer 22, sandwiching the dielectric layer 23.

[0131] <Formation of a Moisture-Resistant Protective Layer>

[0132] Figure 4-5 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a moisture-resistant protective layer.

[0133] For example, a layer composed of a moisture-resistant protective layer 25 can be formed on the surface using a chemical vapor deposition method. Figure 4-4 The surface of the structure shown is on the side opposite to the substrate 10. Then, this layer is patterned, for example, by combining photolithography and etching, to form... Figure 4-5 The moisture-resistant protective layer 25 is shown. More specifically, the moisture-resistant protective layer 25 is formed with openings at various locations, including a location where it overlaps with an opening in the dielectric layer 23 that exposes a portion of the first electrode layer 22 and a location where it exposes a portion of the second electrode layer 24.

[0134] <Formation of the Resin Protective Layer>

[0135] Figure 4-6 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a resin protective layer.

[0136] For example, by spin coating, a layer composed of structural material of resin protective layer 26 is formed on... Figure 4-5 The surface of the structure shown is on the side opposite to the substrate 10. Then, for example, if the structural material of the resin protective layer 26 is photosensitive, the layer is patterned using only photolithography; otherwise, if the structural material of the resin protective layer 26 is non-photosensitive, a combination of photolithography and etching is used to pattern the layer, thereby forming... Figure 4-6 The resin protective layer 26 is shown. More specifically, the resin protective layer 26 is formed with openings at various locations, including a location where it overlaps with the openings of the dielectric layer 23 and the moisture-resistant protective layer 25 for exposing a portion of the first electrode layer 22, and a location where it overlaps with the opening of the moisture-resistant protective layer 25 for exposing a portion of the second electrode layer 24.

[0137] <Formation of External Electrodes>

[0138] Figure 4-7 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a seed layer. Figure 4-8 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming the first coating and the second coating. Figure 4-9 This is a cross-sectional schematic diagram used to illustrate an example of the process of removing a portion of the seed layer.

[0139] like Figure 4-7 As shown, seed layer 29a is formed on Figure 4-6 The surface of the structure shown is on the side opposite to the substrate 10. Furthermore, it is sequentially formed by combining plating and photolithography. Figure 4-8 The first plating layer 29b and the second plating layer 29c are shown. Then, as... Figure 4-9 As shown, for example, a portion of the seed layer 29a is removed by etching. Based on the above, a... Figure 4-9 The second external electrode 28 is shown. It is formed using the same method. Figure 1-3 The first external electrode 27 is shown. More specifically, the first external electrode 27 is formed to be electrically connected to the first electrode layer 22 via openings respectively provided in the dielectric layer 23, the moisture-resistant protective layer 25, and the resin protective layer 26. In addition, a second external electrode 28 is formed to be electrically connected to the second electrode layer 24 via openings respectively provided in the moisture-resistant protective layer 25 and the resin protective layer 26.

[0140] Based on the above, Figure 4-9 The circuit layer 20 shown is formed on the first main surface 10a of the substrate 10. For example... Figure 1-3 As shown, the first external electrode 27 is led out to the surface of the circuit layer 20 opposite to the substrate 10, and is isolated from the second external electrode 28. Additionally, the second external electrode 28 is led out to the surface of the circuit layer 20 opposite to the substrate 10, and is isolated from the first external electrode 27.

[0141] <Formation of the first resin body>

[0142] Figure 4-10 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming a photosensitive resin film. Figure 4-11 This is a cross-sectional schematic diagram used to illustrate an example of the process of forming the first resin body.

[0143] like Figure 4-10 As shown, a photosensitive resin film 35 is formed on the surface of the circuit layer 20 opposite to the substrate 10. Furthermore, by patterning the photosensitive resin film 35 using photolithography, the photosensitive resin film 35 is... Figure 4-11The first resin body 30 shown is formed on the surface of the circuit layer 20 on the side opposite to the substrate 10. More specifically, when viewed from above in the thickness direction T, it is respectively disposed between the end of the substrate 10 and the first external electrode 27, and between the end of the substrate 10 and the second external electrode 28. In the thickness direction T, the front end of the side opposite to the substrate 10 is located at a position higher than the front ends of the first external electrode 27 and the second external electrode 28 on the side opposite to the substrate 10. When viewed from a cross-section in a direction perpendicular to the thickness direction T, the side surface of the first external electrode 27 or the second external electrode 28 extends from the substrate 10 side toward the side surface of the substrate 10 that is close to the end side of the substrate 10 on the side opposite to the substrate 10, and the side surface of the end side of the substrate 10 is formed upright relative to the first main surface 10a of the substrate 10.

[0144] Based on the above, manufacture capacitor 1.

[0145] The above describes the manufacturing of one capacitor 1. However, multiple circuit layers 20 can also be formed on the first main surface 10a of the same substrate 10, and then the substrate 10 can be cut and monolithized by cutting or the like, thereby manufacturing multiple capacitors 1 at the same time.

[0146] The module of the present invention is characterized by comprising: the semiconductor device of the present invention; and a wiring substrate having a first pad electrically connected to a first external electrode and a second pad electrically connected to a second external electrode. Hereinafter, a module incorporating the capacitor of Embodiment 1 of the present invention will be described as a module of Embodiment 1 of the present invention.

[0147] Figure 5 This is a cross-sectional schematic diagram showing the module of Embodiment 1 of the present invention.

[0148] like Figure 5 As shown, module 100 includes capacitor 1 and wiring substrate 50. More specifically, in module 100, capacitor 1 is mounted on wiring substrate 50.

[0149] The wiring substrate 50 has a substrate 51, a first pad 52, and a second pad 53.

[0150] Various wirings are provided on the substrate 51. The various wirings on the substrate 51 are independently connected to the first pad 52 and the second pad 53.

[0151] The first pad 52 is disposed on the surface of the substrate 51 and is electrically connected to the first external electrode 27. More specifically, the first pad 52 is electrically connected to the first external electrode 27 via solder 60.

[0152] For example, metals such as copper (Cu) can be used as structural materials for the first pad 52.

[0153] The second pad 53 is disposed on the surface of the substrate 51 at a position isolated from the first pad 52 and is electrically connected to the second external electrode 28. More specifically, the second pad 53 is electrically connected to the second external electrode 28 via solder 60.

[0154] For example, metals such as copper (Cu) can be used as structural materials for the second pad 53.

[0155] Although Figure 5 Not shown, but in module 100, the first resin body 30 does not contact the wiring substrate 50 side (e.g., first pad 52, second pad 53, solder 60, etc.). This is considered to be due to a mechanism, for example, described below.

[0156] As the first mechanism, the case where capacitor 1 is mounted on wiring substrate 50 without any positional displacement will be described. When capacitor 1 is mounted on wiring substrate 50 via solder 60, firstly, the first resin body 30 contacts the solder 60. Then, if reflow processing is performed, the solder 60 wets and spreads throughout each pad of the first pad 52 and the second pad 53, but the solder 60 avoids the first resin body 30, resulting in the first resin body 30 not contacting the solder 60.

[0157] As a second mechanism, the case where capacitor 1 is mounted on wiring substrate 50 in a positional offset will be explained. In this case, due to the self-alignment effect during reflow processing, the first resin body 30 does not come into contact with solder 60.

[0158] In module 100, it is also possible to... Figure 6 As shown, molding resin 70 is disposed between the wiring substrate 50 and each of the first external electrode 27 and the second external electrode 28. Figure 6 This is a cross-sectional schematic diagram showing the state in which molding resin is provided in the module of Embodiment 1 of the present invention.

[0159] [Implementation Method 2]

[0160] The capacitor of Embodiment 1 of the present invention may further include a second resin body. In this case, the second resin body, when viewed from above in the thickness direction, is disposed between the first external electrode and the second external electrode, and in the thickness direction, the front end of the second resin body on the side opposite to the substrate is located at a position higher than the front ends of the first external electrode and the second external electrode on the side opposite to the substrate. Such an example will be described below as a capacitor of Embodiment 2 of the present invention.

[0161] Figure 7-1 This is a plan view illustrating an example of a capacitor according to Embodiment 2 of the present invention. Figure 7-2 It means and Figure 7-1A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0162] exist Figure 7-1 as well as Figure 7-2 In the capacitor 2 shown, a second resin body 40 is disposed between the first external electrode 27 and the second external electrode 28 when viewed from above in the thickness direction T. More specifically, in Figure 7-1 In the top view shown, along the length direction L, the second resin body 40 is disposed between the normal line extending along the width direction W from the end of the first external electrode 27 on the side of the second external electrode 28 and the normal line extending along the width direction W from the end of the second external electrode 28 on the side of the first external electrode 27. Here, the second resin body 40 is disposed on the surface of the circuit layer 20 on the side opposite to the substrate 10.

[0163] like Figure 7-2 As shown, in the thickness direction T, the front end of the second resin body 40 on the side opposite to the substrate 10 is located at a position higher than the front ends of the first external electrode 27 and the second external electrode 28 on the side opposite to the substrate 10.

[0164] The first resin body 30 and the second resin body 40 can be connected or separated.

[0165] By providing the second resin body 40, the load applied during installation can be borne not only by the first resin body 30 but also by the second resin body 40, thus dispersing the load.

[0166] The structural material of the second resin body 40 can also be the same as that of the first resin body 30. Alternatively, the second resin body 40 can be formed simultaneously with the first resin body 30.

[0167] In the thickness direction T, the front end of the second resin body 40 on the side opposite to the substrate 10 is preferably located at a higher position than the front end of the first resin body 30 on the side opposite to the substrate 10. This allows the timing of contact between each resin body and the wiring substrate, etc., during installation to be staggered, thus reducing the load applied to each resin body.

[0168] The second resin body 40 is preferably disposed at the center surrounding the substrate 10. For example... Figure 7-1 as well as Figure 7-2 As shown, the second resin body 40 preferably extends in a direction orthogonal to the thickness direction T, from the second external electrode 28 toward the first external electrode 27, which is here a direction intersecting the length direction L. More specifically, the second resin body 40 preferably extends in a direction orthogonal to both the length direction L and the thickness direction T, i.e., in the width direction W.

[0169] exist Figure 7-1 as well as Figure 7-2In the second resin body 40, there are: a first wall portion 40a disposed on the side of the first external electrode 27; and a second wall portion 40b disposed on the side of the second external electrode 28 and isolated from the first wall portion 40a.

[0170] like Figure 7-1 As shown, the first wall portion 40a and the second wall portion 40b are preferably arranged in parallel. In this case, for example, when the capacitor 1 is mounted on the wiring substrate, the substrate 10 and the circuit layer 20 can be held stably on the wiring substrate by the second resin body 40. In particular, the first wall portion 40a is provided on one side of the substrate 10 relative to its center in the longitudinal direction L, and the second wall portion 40b is provided on the other side, thereby the substrate 10 and the circuit layer 20 can be held more stably on the wiring substrate by the second resin body 40.

[0171] [Implementation Method 3]

[0172] In the capacitor of Embodiment 1 or Embodiment 2 of the present invention, the first outer peripheral portion and the second outer peripheral portion of the first resin body may be continuously provided along the end of the substrate. Hereinafter, such an example will be described as the capacitor of Embodiment 3 of the present invention.

[0173] Figure 8-1 This is a plan view illustrating an example of the capacitor according to Embodiment 3 of the present invention. Figure 8-2 It means and Figure 8-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0174] exist Figure 8-1 as well as Figure 8-2 In the capacitor 3 shown, the first resin body 30 has: a first outer peripheral portion 30a continuously disposed along the end of the substrate 10 between the end of the substrate 10 and the first external electrode 27 when viewed from the thickness direction T; and a second outer peripheral portion 30b continuously disposed along the end of the substrate 10 between the end of the substrate 10 and the second external electrode 28 when viewed from the thickness direction T. More specifically, when viewed from the thickness direction T, the first outer peripheral portion 30a is disposed around the first external electrode 27, along both ends of the substrate 10 extending in the length direction L and one end extending in the width direction W, with the portion of the substrate 10 along the length direction L connected to the portion along the width direction W. Similarly, the second outer peripheral portion 30b is disposed around the second external electrode 28, along both ends of the substrate 10 extending in the length direction L and the other end extending in the width direction W, with the portion of the substrate 10 along the length direction L connected to the portion along the width direction W.

[0175] With the above structure, even when the capacitor 3 is mounted on the wiring substrate to form a module, and solder spreads, or so-called solder splashes, occur, the first resin body 30 acts as a barrier. Therefore, short circuits between the first external electrode 27 and the second external electrode 28 caused by solder splashes can be suppressed.

[0176] When viewed from above in the thickness direction T, a second resin body 40 may or may not be provided between the first external electrode 27 and the second external electrode 28. When the second resin body 40 is provided, the first resin body 30 and the second resin body 40 may be connected or separated.

[0177] [Implementation Method 4]

[0178] In the semiconductor device of the present invention, the first resin body may also have first corner portions, second corner portions, third corner portions, and fourth corner portions disposed at the four corners of the substrate when viewed from above in the thickness direction. Such an example will be described below as a capacitor according to Embodiment 4 of the present invention.

[0179] Figure 9-1 This is a plan view illustrating an example of the capacitor according to Embodiment 4 of the present invention. Figure 9-2 It means and Figure 9-1 A cross-sectional schematic diagram of the portion corresponding to line segment A1-A2 in the diagram.

[0180] exist Figure 9-1 as well as Figure 9-2 In the capacitor 4 shown, when viewed from above in the thickness direction T, first resin bodies 30 are provided at the four corners of the substrate 10. More specifically, when viewed from above in the thickness direction T, the distance between the entire uppermost surface of the first resin body 30 and the corner of the capacitor element (corner of the substrate 10) is shorter than the shortest distance between the end of the second electrode layer 24 and the outer periphery of the capacitor element (outer periphery of the substrate 10). That is, the first resin body 30 is located at... Figure 9-1 The top view shown indicates that the electrode is positioned within the range of the dashed line extending from the end of the second electrode layer 24. Here, the first resin body 30 is disposed on the surface of the circuit layer 20 on the side opposite to the substrate 10.

[0181] like Figure 9-1 As shown, the first resin body 30 has a first corner portion 31a, a second corner portion 31b, a third corner portion 31c, and a fourth corner portion 31d disposed at the four corners of the substrate 10 when viewed from above in the thickness direction T. Each of the first corner portions 31a, 31b, 31c, and 31d is a rhomboid pyramid with its base facing the substrate 10. Furthermore, the two side surfaces of the first corner portion 31a on the side of the first external electrode 27 (in...) Figure 9-1The two sides of the substrate 10, which are shown in the diagram as right-angled triangles, are respectively located on the side opposite to the substrate 10, near the end of the substrate 10 at the first corner 31a. Figure 9-1 The two sides of the first corner 31a on the end side of the substrate 10 are opposite to each other. Additionally, each of the two side surfaces of the first corner 31a on the end side of the substrate 10 stands upright relative to the first main surface 10a of the substrate 10. The same applies to the second corner 31b. The two side surfaces of the third corner 31c on the second external electrode 28 side (in...) Figure 9-1 The two sides of the substrate 10, which are shown in the diagram as right-angled triangles, each face away from the substrate 10 and towards the side opposite to the substrate 10, near the end of the substrate 10 at the third corner 31c. Figure 9-1 The facet of the third corner 31c that overlaps with the end of the substrate 10 is one of the opposite faces. Furthermore, the two side faces of the end of the substrate 10 of the third corner 31c each stand upright relative to the first main facet 10a of the substrate 10. The same applies to the fourth corner 31d.

[0182] like Figure 9-1 As shown, when viewed from above in the thickness direction T, the first resin body 30 is preferably disposed at a position that does not overlap with the first electrode layer 22.

[0183] By disposing the first resin body 30 at the four corners of the substrate 10, the load applied to the first resin body 30 per unit area is increased, thereby further promoting the... Figure 2-1 The first resin body 30 is subjected to lateral deformation as described herein. As a result, damage to the capacitor elements, particularly the dielectric layer 23, is further suppressed.

[0184] In addition, if the first resin body 30 is disposed at the four corners of the substrate 10, the path for filling the molding resin is open when the resin is molded after installation, thus suppressing poor filling.

[0185] When viewed from above in the thickness direction T, a second resin body 40 may be provided between the first external electrode 27 and the second external electrode 28, or the second resin body 40 may not be provided.

[0186] [Implementation Method 5]

[0187] The capacitor of Embodiment 4 of the present invention may further include a third resin body. In this case, the third resin body is disposed between the first resin bodies when viewed from above in the thickness direction, and in the thickness direction, the front end of the third resin body on the side opposite to the substrate is located at a position higher than the front ends of the first external electrode and the second external electrode on the side opposite to the substrate. Such an example will be described below as a capacitor of Embodiment 5 of the present invention.

[0188] Figure 10-1This is a plan view illustrating an example of the capacitor according to Embodiment 5 of the present invention. Figure 10-2 It means and Figure 10-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0189] exist Figure 10-1 as well as Figure 10-2 In the capacitor 5 shown, when viewed from above in the thickness direction T, a third resin body 41 is disposed between the first resin bodies 30. More specifically, in Figure 10-1 In the top view shown, a third resin body 41 is provided between the first corner portion 31a and the second corner portion 31b, between the second corner portion 31b and the third corner portion 31c, between the third corner portion 31c and the fourth corner portion 31d, and between the fourth corner portion 31d and the first corner portion 31a. Here, the third resin body 41 is provided on the outer periphery of the substrate 10 when viewed from the thickness direction T.

[0190] like Figure 10-2 As shown, in the thickness direction T, the front end of the third resin body 41 on the side opposite to the substrate 10 is located at a higher position than the front ends of the first external electrode 27 and the second external electrode 28 on the side opposite to the substrate 10.

[0191] By providing the third resin body 41, the load applied during installation can be borne not only by the first resin body 30 but also by the third resin body 41, thus dispersing the load.

[0192] Furthermore, even when solder splashes occur during the mounting of capacitor 5 onto the wiring substrate to form a module, the third resin body 41 acts as a barrier. Therefore, short circuits between the first external electrode 27 and the second external electrode 28 caused by solder splashes can be suppressed.

[0193] The structural material of the third resin body 41 can also be the same as that of the first resin body 30. Alternatively, the third resin body 41 can be formed simultaneously with the first resin body 30.

[0194] Since the first resin body 30 and the third resin body 41 are separated at the bottom, the load during installation is not transferred from the first resin body 30 to the third resin body 41, which is therefore preferable.

[0195] It can also be like Figure 10-2As shown, when viewed in cross-section perpendicular to the thickness direction T, the side surface of the third resin body 41 on the side of the first external electrode 27 or the second external electrode 28 extends from the substrate 10 side toward the side opposite to the substrate 10, approaching the end side of the substrate 10 of the third resin body 41. That is, the cross-sectional shape of the third resin body 41 can also be a so-called conical shape, where the width decreases from the substrate 10 side toward the side opposite to the substrate 10. In this case, the side surface of the third resin body 41 on the side of the first external electrode 27 or the second external electrode 28 can also be curved, as long as it extends from the substrate 10 side toward the side opposite to the substrate 10, approaching the end side of the substrate 10 of the third resin body 41.

[0196] Furthermore, it can also be like Figure 10-2 As shown, when viewed in cross-section perpendicular to the thickness direction T, the side surface of the end of the substrate 10 of the third resin body 41 stands upright relative to the first main surface 10a of the substrate 10. In this case, the front end of the side of the third resin body 41 opposite to the substrate 10 can also be an acute angle. Alternatively, as shown... Figure 10-2 As shown, the front end of the third resin body 41 on the side opposite to the substrate 10 is sharp.

[0197] In the thickness direction T, the front end of the third resin body 41 on the side opposite to the substrate 10 is preferably located at a lower position than the front end of the first resin body 30 on the side opposite to the substrate 10. This allows the timing of contact between each resin body and the wiring substrate, etc., during installation to be staggered, thus reducing the load applied to each resin body.

[0198] When viewed from above in the thickness direction T, a second resin body 40 may or may not be provided between the first external electrode 27 and the second external electrode 28. When the second resin body 40 is provided, the second resin body 40 and the third resin body 41 may be connected or separated.

[0199] When a second resin body 40 is provided between the first external electrode 27 and the second external electrode 28, the front end of the second resin body 40 on the side opposite to the substrate 10 is preferably located higher than the front end of the first resin body 30 on the side opposite to the substrate 10 in the thickness direction T. This allows the timing of contact between each resin body and the wiring substrate during installation to be staggered, thus reducing the load applied to each resin body.

[0200] Figure 11-1 This is a plan view showing a modified example of the capacitor according to Embodiment 5 of the present invention. Figure 11-2 It means and Figure 11-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0201] exist Figure 11-1 as well as Figure 11-2 In the capacitor 5A shown, in the thickness direction T, the front end of the second resin body 40 on the side opposite to the substrate 10 is located at a higher position than the front end of the third resin body 41 on the side opposite to the substrate 10.

[0202] Although Figure 11-1 as well as Figure 11-2 Not shown, but in the thickness direction T, the front end of the second resin body 40 on the side opposite to the substrate 10 is located at a higher position than the front end of the first resin body 30 on the side opposite to the substrate 10, and the front end of the third resin body 41 on the side opposite to the substrate 10 is located at a lower position than the front end of the first resin body 30 on the side opposite to the substrate 10.

[0203] [Implementation Method 6]

[0204] In the capacitors of Embodiments 1 to 5 of the present invention, the circuit layer may further include a third electrode layer that is opposite to the first electrode layer and isolated from the second electrode layer. An example of this will be described below as the capacitor of Embodiment 6 of the present invention.

[0205] Figure 12-1 This is a plan view illustrating an example of the capacitor according to Embodiment 6 of the present invention. Figure 12-2 It means and Figure 12-1 A cross-sectional schematic diagram of the portion corresponding to line segment D1-D2 in the diagram.

[0206] exist Figure 12-1 as well as Figure 12-2 In the capacitor 6 shown, the circuit layer 20 also has a third electrode layer 24a.

[0207] The first external electrode 27 is led out to the surface of the circuit layer 20 opposite to the substrate 10, and is isolated from the second external electrode 28. That is, the first external electrode 27 is located on the side of the third electrode layer 24a opposite to the substrate 10. Here, the first external electrode 27 is electrically connected to the third electrode layer 24a. More specifically, the openings respectively provided in the moisture-resistant protective layer 25 and the resin protective layer 26 extend by communicating along the thickness direction T, and the first external electrode 27 is electrically connected to the third electrode layer 24a through these openings. In addition, the first external electrode 27 extends along the surface along the length direction L and the thickness direction T (see reference). Figure 12-2 It is isolated from the first electrode layer 22 and is not electrically connected to the first electrode layer 22.

[0208] The third electrode layer 24a is opposite to the first electrode layer 22 and isolated from the second electrode layer 24. More specifically, the third electrode layer 24a is disposed on the surface of the dielectric layer 23 on the side opposite to the substrate 10, sandwiching the dielectric layer 23 and opposite to the first electrode layer 22.

[0209] Examples of structural materials for the third electrode layer 24a include metals such as aluminum (Al), silicon (Si), copper (Cu), silver (Ag), gold (Au), nickel (Ni), chromium (Cr), and titanium (Ti). The structural material for the third electrode layer 24a may also be an alloy containing at least one of the aforementioned metals; specific examples include aluminum-silicon alloy (AlSi), aluminum-copper alloy (AlCu), and aluminum-silicon-copper alloy (AlSiCu).

[0210] The third electrode layer 24a can be a single-layer structure or a multi-layer structure containing multiple conductive layers made of the aforementioned materials.

[0211] The thickness of the third electrode layer 24a in the thickness direction T is preferably 0.3 μm or more and 10 μm or less, more preferably 0.5 μm or more and 5 μm or less.

[0212] A capacitor element is constructed using a first electrode layer 22, a dielectric layer 23, and a third electrode layer 24a. More specifically, the capacitance of the capacitor element is formed in the region where the first electrode layer 22 overlaps with the dielectric layer 23 and the third electrode layer 24a.

[0213] exist Figure 1-1 as well as Figure 1-2 In the structure of capacitor 1 shown, a capacitor is formed on the left side, and on the opposite side, Figure 12-1 as well as Figure 12-2 In the structure of the capacitor 6 shown, capacitors are formed on the left and right sides. This allows a capacitor with the same capacitance as capacitor 1 to be formed with a dielectric layer 23 that is approximately half the thickness of the dielectric layer 23. Therefore, corresponding to the ability to thin the dielectric layer 23 of a capacitor with small capacitance, manufacturing costs can be reduced. On the other hand, if the dielectric layer 23 is thinned, the capacitor element is prone to breakage under load. However, by making the first resin body 30 stand upright, breakage of the capacitor element can be suppressed.

[0214] [Other implementation methods]

[0215] The semiconductor device of the present invention is not limited to the above-described embodiments. Various applications and modifications can be applied to the structure, manufacturing conditions, etc. of semiconductor devices such as capacitors within the scope of the present invention.

[0216] Explanation of reference numerals in the attached figures

[0217] 1, 1A, 2, 3, 4, 5, 5A, 6… Capacitor (semiconductor device); 10… Substrate; 10a… First main surface of the substrate; 10b… Second main surface of the substrate; 20… Circuit layer; 21… Insulating layer; 22… First electrode layer; 23… Dielectric layer; 24… Second electrode layer; 24a… Third electrode layer; 25… Moisture-resistant protective layer; 26… Resin protective layer; 27… First external electrode; 28… Second external electrode; 29a… Seed layer; 29b… First plating layer; 29c… Second plating layer; 30… First… Resin body; 30a…first outer periphery; 30b…second outer periphery; 31a…first corner; 31b…second corner; 31c…third corner; 31d…fourth corner; 35…photosensitive resin film; 40…second resin body; 40a…first wall; 40b…second wall; 41…third resin body; 50…wiring substrate; 51…substrate; 52…first pad; 53…second pad; 60…solder; 70…molding resin; 100…module; L…length direction; T…thickness direction; W…width direction.

Claims

1. A semiconductor device comprising: The substrate has a first main surface and a second main surface that are opposite each other in the thickness direction; A circuit layer is disposed on the first main surface of the substrate; and First resin body. The circuit layer has: a first electrode layer disposed on the substrate side; A second electrode layer is disposed opposite to the first electrode layer; a dielectric layer is disposed between the first electrode layer and the second electrode layer in the thickness direction; a first external electrode is led out to the surface of the circuit layer on the side opposite to the substrate. And a second external electrode, which is led out to the surface of the circuit layer on the side opposite to the substrate, and is isolated from the first external electrode. The first resin body, when viewed from above in the thickness direction, is disposed between the end of the substrate and the first external electrode, and between the end of the substrate and the second external electrode. In the thickness direction, the front end of the first resin body on the side opposite to the substrate is located at a higher position than the front ends of the first external electrode and the second external electrode on the side opposite to the substrate. When viewed in cross-section perpendicular to the thickness direction, the side of the first external electrode or the second external electrode of the first resin body approaches the side of the end of the substrate of the first resin body from the substrate side toward the side opposite to the substrate, and the side of the end of the substrate of the first resin body stands upright relative to the first main surface of the substrate.

2. The semiconductor device according to claim 1, wherein, When viewed in cross-section perpendicular to the thickness direction, the front end of the first resin body on the side opposite to the substrate is an acute angle.

3. The semiconductor device according to claim 1 or 2, wherein, It also has a second resin body. The second resin body, when viewed from above in the thickness direction, is disposed between the first external electrode and the second external electrode. In the thickness direction, the front end of the second resin body on the side opposite to the substrate is located at a position higher than the front ends of the first external electrode and the second external electrode on the side opposite to the substrate.

4. The semiconductor device according to claim 3, wherein, In the thickness direction, the front end of the second resin body on the side opposite to the substrate is located at a higher position than the front end of the first resin body on the side opposite to the substrate.

5. The semiconductor device according to any one of claims 1 to 4, wherein, The first resin body has: a first peripheral portion disposed along the end of the substrate between the end of the substrate and the first external electrode when viewed from the thickness direction; and a second peripheral portion disposed along the end of the substrate between the end of the substrate and the second external electrode when viewed from the thickness direction.

6. The semiconductor device according to any one of claims 1 to 4, wherein, The first resin body has a first corner portion, a second corner portion, a third corner portion, and a fourth corner portion disposed at the four corners of the substrate when viewed from above in the thickness direction.

7. The semiconductor device according to claim 6, wherein, It also has a third resin body. The third resin body, when viewed from above in the thickness direction, is disposed between the first resin bodies. In the thickness direction, the front end of the third resin body on the side opposite to the substrate is located at a higher position than the front ends of the first external electrode and the second external electrode on the side opposite to the substrate.

8. The semiconductor device according to claim 7, wherein, In the thickness direction, the front end of the third resin body on the side opposite to the substrate is located at a lower position than the front end of the first resin body on the side opposite to the substrate.

9. The semiconductor device according to any one of claims 1 to 8, wherein, The first external electrode is electrically connected to the first electrode layer. The second external electrode is electrically connected to the second electrode layer.

10. The semiconductor device according to any one of claims 1 to 8, wherein, The circuit layer also includes a third electrode layer, which is opposite to the first electrode layer and isolated from the second electrode layer. The first external electrode is electrically connected to the third electrode layer. The second external electrode is electrically connected to the second electrode layer.

11. A module comprising: The semiconductor device according to any one of claims 1 to 10; and The wiring substrate has a first pad electrically connected to the first external electrode and a second pad electrically connected to the second external electrode.

12. The module according to claim 11, wherein, It also includes a molding resin disposed between the wiring substrate and each of the first external electrode and the second external electrode.

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