一种湿法刻蚀控片及制作方法
By implanting N-type ions into the silicon oxide layer and performing annealing, the etching rate of the wet etching control wafer was improved, the problem of low monitoring sensitivity was solved, and the stability and controllability of the wet etching process were achieved.
CN117253777BActive Publication Date: 2026-07-17GUANGZHOU CANSEMI TECH INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGZHOU CANSEMI TECH INC
- Filing Date
- 2023-09-25
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
The low monitoring sensitivity of wet etching control wafers in existing technologies leads to unstable controllability of the wet etching process, especially when the concentration of buffer oxide etching solution changes, making accurate monitoring difficult.
Method used
N-type ions are implanted into the silicon oxide layer and then annealed to improve the etching rate of the silicon oxide layer. The wet etching rate is obtained by measuring the thickness after etching, so as to achieve precise monitoring of the etching process.
Benefits of technology
This improves the monitoring sensitivity of the wet etching process, masks the errors in etching rate caused by chemical element ratios and preparation factors, and achieves stable and controllable wet etching process.
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Figure CN117253777B_ABST
Abstract
本发明提供一种湿法刻蚀控片及制作方法，该制作方法包括：提供基底，于基底上形成氧化硅层；采用N型离子注入氧化硅层，并进行退火，对氧化硅层进行改性，以提高氧化硅层的刻蚀速率；测量氧化硅层的厚度，采用缓冲氧化物刻蚀液刻蚀氧化硅层，测量氧化硅层刻蚀后的厚度，获取氧化硅层的湿法刻蚀速率。本发明的湿法刻蚀控片及制作方法中，通过于氧化硅层中注入N型离子，提高湿法刻蚀速率，能够提高湿法刻蚀工艺的监控灵敏度，掩盖因控片的化学元素配比和制备等因素引起的刻蚀速率的变化误差，实现湿法刻蚀工艺稳定可控。
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