Semiconductor processing apparatus

Abstract

The application discloses a semiconductor process equipment, including a semiconductor chamber, an electromagnetic coil, a support component and an insulating capacitance adjusting piece, wherein: the semiconductor chamber has an inner cavity, the support component is arranged in the inner cavity, and the support component is used for supporting a wafer; the semiconductor chamber comprises a dielectric window, and the dielectric window is arranged opposite to the support component; the electromagnetic coil is arranged outside the semiconductor chamber and opposite to the dielectric window, and a containing space is formed between the electromagnetic coil and the dielectric window; and the insulating capacitance adjusting piece is movably arranged in the containing space and used for covering part of the dielectric window. The above scheme can solve the problem that part of the wafer cannot meet the processing requirements when the semiconductor process equipment processes the wafer.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, and more particularly to a semiconductor process equipment. Background Technology

[0002] Semiconductor devices, as precision components, are used in fields such as integrated circuits and consumer electronics. The fabrication of semiconductor devices requires semiconductor processing equipment, such as etching equipment.

[0003] A semiconductor etching apparatus mainly consists of a semiconductor chamber, an electromagnetic coil, and supporting components. When the electromagnetic coil is energized, the gas within the semiconductor chamber generates plasma under the coupling effect of the electromagnetic coil's magnetic and electric fields. This plasma processes the wafer within the chamber. However, due to the non-symmetrical design of the semiconductor chamber and the imprecise positioning and angles of the electromagnetic coil and supporting components, the plasma generated within the semiconductor chamber after energization exhibits uneven distribution. This uneven plasma distribution within the semiconductor chamber leads to unsatisfactory processing in certain areas or multiple areas of the wafer during etching. Summary of the Invention

[0004] This invention discloses a semiconductor process equipment to solve the problem that some areas of the wafer cannot meet the processing requirements when semiconductor process equipment processes wafers.

[0005] To solve the above problems, this application adopts the following technical solution:

[0006] A semiconductor process apparatus includes a semiconductor chamber, an electromagnetic coil, a support component, and an insulating capacitor adjustment component, wherein:

[0007] The semiconductor chamber has an inner cavity, and the support member is disposed in the inner cavity. The support member is used to support the wafer.

[0008] The semiconductor chamber includes a dielectric window, which is disposed opposite to the support member;

[0009] The electromagnetic coil is located outside the semiconductor cavity and is positioned opposite the dielectric window, with a receiving space formed between the electromagnetic coil and the dielectric window;

[0010] The insulating capacitor adjustment element is movably disposed in the accommodating space and is used to cover part of the dielectric window.

[0011] The technical solution adopted in this invention can achieve the following technical effects:

[0012] The semiconductor processing equipment disclosed in this invention generates plasma within an internal cavity by energizing an electromagnetic coil, and then processes the wafer using this plasma. The insulating capacitance adjustment component has a higher dielectric constant than air. By placing the insulating capacitance adjustment component within the space formed between the electromagnetic coil and the dielectric window, it's equivalent to reducing the air layer and increasing the dielectric layer, ultimately increasing the overall dielectric constant and capacitance of this part of the structure. In other words, increasing the area of ​​the insulating capacitance adjustment component enhances capacitance, allowing for a higher voltage to be obtained with constant coil power. This alters the electric field distribution, affects coupling, changes the etching capability of the plasma in the corresponding region, and thus increases the etching rate.

[0013] By movably placing the insulating capacitor adjustment component within the accommodating space, the position of the insulating capacitor adjustment component can be set more flexibly. When one or more areas of the wafer fail to meet processing requirements, the insulating capacitor adjustment component can be moved to the relative position of the area that fails to meet processing requirements, thereby changing the processing state of the area that fails to meet processing requirements, and thus making the processing of the entire wafer meet the requirements, effectively solving the problem of some areas of the wafer failing to meet processing requirements. Attached Figure Description

[0014] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0015] Figure 1 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in an embodiment of the present invention;

[0016] Figure 2 This is a schematic diagram of the structure of the annular guide rail disclosed in an embodiment of the present invention;

[0017] Figure 3 This is a schematic diagram of the structure of the insulating capacitor adjusting component disclosed in an embodiment of the present invention;

[0018] Figure 4 This is a cross-sectional schematic diagram of the annular guide rail disclosed in an embodiment of the present invention;

[0019] Figure 5 This is a schematic diagram of the connection between an insulating capacitor adjusting component and an annular guide rail, as disclosed in an embodiment of the present invention.

[0020] Figure 6 This is a schematic diagram of another insulating capacitor adjusting component connected to an annular guide rail according to an embodiment of the present invention.

[0021] Explanation of reference numerals in the attached figures:

[0022] 100 - Semiconductor chamber, 110 - Inner cavity, 120 - Dielectric window

[0023] 200-Electromagnetic coil,

[0024] 300-Supporting components

[0025] 400 - Insulating capacitor adjustment component, 410 - Plate-shaped body, 420 - Connecting protrusion,

[0026] 500 - Circular guide rail, 510 - Circular groove, 520 - Mounting hole

[0027] 600-nozzle. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0029] The technical solutions disclosed in the various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] Please refer to Figures 1 to 6 This invention discloses a semiconductor process apparatus that can be used to etch wafers. Of course, this semiconductor process apparatus can also be other apparatus with a similar structure. For example, Figure 1 As shown, the semiconductor process equipment disclosed in this embodiment of the invention includes a semiconductor chamber 100, an electromagnetic coil 200, a support component 300, and an insulating capacitor adjustment component 400.

[0031] The semiconductor chamber 100 serves as the foundation for mounting some components of the semiconductor process equipment and also forms the enclosure of the processing space. The semiconductor chamber 100 can have a regular, symmetrical structure. The semiconductor chamber 100 has a hollow inner cavity 110, which provides space for the support component 300 and the wafer. The inner cavity 110 can also have a symmetrical, regular shape. Of course, the semiconductor chamber 100 and the inner cavity 110 can also have an asymmetrical structure. The inner cavity 110 can contain a gas that can be ionized to generate plasma.

[0032] The semiconductor chamber 100 includes a dielectric window 120, which allows the electric and magnetic fields generated by the electromagnetic coil 200 to pass through and enter the inner cavity 110. The dielectric window 120 can be disposed on the upper part of the semiconductor chamber 100, and the dielectric window 120 can be disposed at a position opposite to the support member 300.

[0033] The support component 300 serves as a carrier for supporting the wafer. It can also be used to support other objects, and is not limited to wafers. There can be one support component 300, disposed within the inner cavity 110. The support component 300 can have a regular structure and be located at the bottom of the inner cavity 110, with its center potentially located at the center of the inner cavity 110. Alternatively, there can be multiple support components 300, all disposed within the inner cavity 110. The specific number of support components 300 is not limited here.

[0034] An electromagnetic coil 200 is disposed outside the semiconductor chamber 100, opposite to the dielectric window 120, with a certain gap between them forming a receiving space. When energized, the electromagnetic coil 200 generates electric and magnetic fields. These fields can pass through the dielectric window 120 into the inner cavity 110, thereby exciting plasma generation within the inner cavity 110.

[0035] An insulating capacitance adjuster 400 is movably disposed within the receiving space, and the insulating capacitance adjuster 400 covers a portion of the dielectric window 120. The dielectric constant of the insulating capacitance adjuster 400 may differ from the dielectric constant of the medium between the electromagnetic coil 200 and the dielectric window 120. Since there is an air layer between the electromagnetic coil 200 and the dielectric window 120, the dielectric constant of the insulating capacitance adjuster 400 is larger than that of air. The insulating capacitance adjuster 400 may be movably placed on the dielectric window 120, or it may have a mounting shaft at the center of the dielectric window, with one end of the insulating capacitance adjuster 400 connected to the mounting shaft, allowing the insulating capacitance adjuster 400 to rotate around the mounting shaft.

[0036] The insulating capacitance adjusting component 400 can be a resin board, specifically, the material of the resin board can be epoxy resin or polytetrafluoroethylene acetylene, etc. The insulating capacitance adjusting component 400 can also be made of ceramic material. There is no specific limitation on the material of the insulating capacitance adjusting component 400; any material with different dielectric constants is acceptable. The selection can be made according to different requirements.

[0037] In the specific implementation process, the support component 300 is disposed in the inner cavity 110, the wafer is disposed on the support component 300, the electromagnetic coil 200 is disposed outside the semiconductor chamber 100 and opposite to the dielectric window 120, and the insulating capacitance adjustment component 400 is disposed in the receiving space formed between the electromagnetic coil 200 and the dielectric window 120, covering a portion of the dielectric window 120. After the electromagnetic coil 200 is energized, the electric field and magnetic field generated by the electromagnetic coil 200 pass through the dielectric window 120, exciting the generation of plasma in the inner cavity 110 to process the wafer. The insulating capacitance adjustment component 400 can change the plasma distribution in its covered area, thereby changing the processing state of the wafer in the area covered by the insulating capacitance adjustment component 400.

[0038] Specifically, regarding etching machines, due to their non-symmetrical structure, uneven angular etching distribution frequently occurs during actual etching processes. This cannot be eliminated by adjusting the temperature of the support component 300 or the current ratio between different electromagnetic coils 200 (e.g., inner and outer). A key step affecting the etching morphology is plasma generation. Plasma is generated by the electromagnetic coil 200 in the upper electrode through inductive and capacitive coupling. After power is applied to the electromagnetic coil 200, the generated magnetic and electric fields excite plasma generation through the dielectric window 120 below. In other words, the strength of the coupling affects the amount of plasma generated, thus affecting the etching rate. There is a certain height of air gap between the electromagnetic coil 200 and the dielectric window 120; the relative permittivity of this part is 1, corresponding to low capacitance. By changing the spatial distribution of the relative permittivity between the electromagnetic coil 200 and the dielectric window 120, compensating for low etching rates by increasing the permittivity, the coupling strength and voltage distribution can be affected, thereby influencing plasma generation and altering etching capability.

[0039] The semiconductor processing equipment disclosed in this invention generates plasma in the cavity 110 by energizing the electromagnetic coil 200, and then processes the wafer using the plasma. The insulating capacitance adjustment element 400 has a higher dielectric constant than air. By placing the insulating capacitance adjustment element 400 in the space formed between the electromagnetic coil 200 and the dielectric window 120, it is equivalent to reducing the air layer and increasing the dielectric layer, ultimately increasing the overall dielectric constant and capacitance of this part of the structure. In other words, increasing the area of ​​the insulating capacitance adjustment element 400 enhances capacitance. Under the condition of constant coil power, a higher voltage can be obtained, thereby changing the electric field distribution, affecting coupling, altering the etching capability of the plasma in the corresponding area, and thus increasing the etching rate.

[0040] By movably placing the insulating capacitor adjustment component 400 within the accommodating space, the position of the insulating capacitor adjustment component 400 can be set more flexibly. When one or more areas of the wafer fail to meet processing requirements, the insulating capacitor adjustment component 400 can be moved to the relative position of the area where the wafer processing fails to meet requirements, thereby changing the processing state of the area where the wafer processing fails to meet requirements, and thus making the processing of the entire wafer meet the requirements, effectively solving the problem of some areas of the wafer failing to meet processing requirements.

[0041] As an optional embodiment of the present invention, the semiconductor process equipment may further include an annular guide rail 500, which may be disposed on the dielectric window 120, and the center of the annular guide rail 500 may coincide with the center of the dielectric window 120. An insulating capacitance adjusting member 400 is guided and engaged with the annular guide rail 500, and the insulating capacitance adjusting member 400 may move along the annular guide rail 500. Specifically, the movement of the insulating capacitance adjusting member 400 along the annular guide rail 500 may be sliding or rotating.

[0042] By setting the annular guide rail 500, the insulating capacitor adjusting component 400 can be guided and engaged with the annular guide rail 500, thereby allowing the insulating capacitor adjusting component 400 to move along the annular guide rail 500, and ultimately move to the area of ​​the wafer that needs to be adjusted. By setting the annular guide rail 500, the insulating capacitor adjusting component 400 can be adjusted within the predetermined guide rail, thereby effectively improving the accuracy of the movement of the insulating capacitor adjusting component 400.

[0043] Optionally, the annular guide rail 500 can be I-shaped, and the insulating capacitor adjusting component 400 can be equipped with two rollers that cooperate with the annular guide rail 500. The two rollers of the insulating capacitor adjusting component 400 are clamped in the middle of the annular guide rail 500, so that the insulating capacitor adjusting component 400 can roll on the annular guide rail 500. Through the cooperation of the rollers with the I-shaped annular guide rail, the connection between the insulating capacitor adjusting component 400 and the annular guide rail 500 can be more stable, and the friction force is reduced when the insulating capacitor adjusting component 400 moves along the annular guide rail 500. The annular guide rail 500 and the insulating capacitor adjusting component 400 can also be made of magnetic materials. The annular guide rail 500 and the insulating capacitor adjusting component 400 are engaged by magnetic force, and the insulating capacitor adjusting component 400 can move along the annular guide rail 500 under the action of external force.

[0044] Optionally, the annular guide rail 500 may also have an annular groove 510, with the groove opening facing the center of the annular guide rail 500. The insulating capacitor adjusting member 400 includes a plate-shaped body 410 and a connecting protrusion 420. The connecting protrusion 420 extends into the annular groove 510 and slides in contact with the annular groove 510. The connecting protrusion 420 is connected to the plate-shaped body 410, which is attached to the dielectric window 120 and can rotate with the connecting protrusion 420.

[0045] By creating an annular groove 510 on the annular guide rail 500, and including a connecting protrusion 420 in the insulating capacitor adjusting member 400, the connecting protrusion 420 engages with the annular groove 510, allowing the connecting protrusion 420 to slide along the annular groove 510. This effectively solves the problem of movement of the insulating capacitor adjusting member 400 along the annular guide rail 500. The engagement between the annular groove 510 and the connecting protrusion 420 makes the connection between them more stable, and allows for more precise movement of the insulating capacitor adjusting member 400 through this engagement.

[0046] Specifically, the annular groove 510 can be a T-shaped structure, and the connecting protrusion 420 is a structure that cooperates with the annular groove 510. The connecting protrusion 420 can cooperate with the annular groove 510 so that the connecting protrusion 420 can slide within the annular groove 510, effectively ensuring the stability of the connection between the connecting protrusion 420 and the annular groove 510.

[0047] In one optional embodiment, there are two connecting protrusions 420, which are respectively located at both ends of the outer edge of the plate-shaped body 410 adjacent to the annular guide rail 500.

[0048] By providing two connecting protrusions 420, both protrusions 420 slide in engagement with the annular groove 510, thereby making the connection between the insulating capacitor adjustment component 400 and the annular guide rail 500 more stable. The two connecting protrusions 420 can also limit the angle between the plate-shaped body 410 and the annular guide rail 500, avoiding uneven adjustment of the wafer caused by the tilt of the plate-shaped body 410.

[0049] In one optional embodiment, the annular guide rail 500 has a mounting hole 520 on its side wall facing away from the medium window 120. The mounting hole 520 communicates with the annular groove 510, and the connecting protrusion 420 can be moved outside the annular groove 510 or inside the annular groove 510 through the mounting hole 520.

[0050] By providing the mounting hole 520, the connecting protrusion 420 can enter the annular groove 510 through the mounting hole 520, effectively solving the problem of installing and disassembling the insulating capacitor adjusting component 400 and the annular guide rail 500. At the same time, by placing the mounting hole 520 on the side wall facing away from the dielectric window 120, it prevents the connecting protrusion 420 from dislodging from the annular groove 510 along the mounting hole 520 during the movement of the insulating capacitor adjusting component 400 on the annular guide rail 500.

[0051] Specifically, the connecting protrusion 420 can be a sphere, the annular groove 510 can be an annular cavity adapted to the sphere, and the diameter of the mounting hole 520 can be larger than the diameter of the sphere, so that the connecting protrusion 420 can move through the mounting hole 520 to outside the annular groove 510 or to inside the annular groove 510.

[0052] As an optional embodiment, the plate-shaped body 410 is a fan-shaped structure, and the center of the fan-shaped structure coincides with the center of the annular guide rail 500.

[0053] By setting the plate-shaped body 410 into a fan-shaped structure, its shape becomes regular, resulting in a relatively regular adjustment area. This improves wafer processing accuracy. Furthermore, by controlling parameters such as angle, size, and thickness, compensation can be achieved for etching rates at lower locations with different etching rates, thus optimizing the angular etching asymmetry. By aligning the center of the fan-shaped structure with the center of the annular guide rail 500, the fan-shaped structure can move around its center, covering the entire area enclosed by the annular guide rail 500.

[0054] Specifically, connecting protrusions 420 can be provided at both ends of the arc side of the fan-shaped structure away from the center. The center of the medium window 120 can coincide with the center of the annular guide rail 500. A nozzle 600 for injecting gas can be provided at the center of the medium window 120. The nozzle 600 can be a hollow cylindrical structure. The arc-shaped end of the fan-shaped structure near the center can be arc-shaped. The arc-shaped end of the fan-shaped structure near the center is adapted to the nozzle 600, and the arc-shaped end of the fan-shaped structure near the center slides relative to the nozzle 600.

[0055] As an optional embodiment, the semiconductor chamber 100 may further include a nozzle 600, which may be a hollow cylindrical structure. The nozzle 600 can inject a plasma-generating gas into the inner cavity 110. The nozzle 600 passes through the dielectric window 120 from outside the semiconductor chamber 100 and communicates with the inner cavity 110. The center of the annular guide rail 500 is located on the central axis of the nozzle 600. An insulating capacitor adjustment member 400 is disposed between the nozzle 600 and the annular guide rail 500, and the opposite edges of the insulating capacitor adjustment member 400 slide in engagement with the nozzle 600 and the annular guide rail 500, respectively.

[0056] By setting the nozzle 600, the center of the annular guide rail 500 is located on the central axis of the nozzle 600. The insulating capacitor adjustment component 400 is located between the nozzle 600 and the annular guide rail 500. The opposite edges of the insulating capacitor adjustment component 400 slide with the nozzle 600 and the annular guide rail 500 respectively, making the installation of the insulating capacitor adjustment component 400 more stable, and thus making the adjustable area of ​​the insulating capacitor adjustment component 400 relatively stable. The nozzle 600 can not only serve as a component that slides with the insulating capacitor adjustment component 400 and restricts the position of the insulating capacitor adjustment component 400, but also effectively solve the problem of injecting plasma-generating gas into the inner cavity 110.

[0057] As an optional embodiment, the orthographic projection of the annular guide rail 500 onto the medium window 120 is a first projection, and the orthographic projection of the support member 300 onto the medium window 120 is a second projection, with the first projection surrounding the second projection. Specifically, the annular guide rail 500 can be disposed opposite to the support member 300, and the annular guide rail 500 can cover the entire support member 300.

[0058] The first projection is the orthographic projection of the annular guide rail 500 onto the dielectric window 120, and the second projection is the orthographic projection of the support component 300 onto the dielectric window 120. The arrangement of the first projection around the second projection allows the insulating capacitor adjusting component 400 to cover various areas of the support component 300 when it moves along the annular guide rail 500.

[0059] As an optional embodiment, the annular guide rail 500 is provided with scale lines. Specifically, the scale lines can be set on the side wall of the annular guide rail 500 opposite to the medium window 120, or they can be set on the side wall of the annular guide rail 500 opposite to the center of the annular guide rail 500. The scale lines can be uniformly set angle values.

[0060] By setting scale lines on the annular guide rail 500, the insulating capacitor adjusting component 400 can move precisely to a specific position when it moves along the annular guide rail 500, making the adjustment area of ​​the insulating capacitor adjusting component 400 more precise.

[0061] As an optional embodiment, the number of insulating capacitance adjusting elements 400 is at least two. Specifically, there can be multiple insulating capacitance adjusting elements 400, and at least one of the shapes, sizes, or thicknesses of the multiple insulating capacitance adjusting elements 400 can be different. An insulating capacitance adjusting element 400 can be disposed singly within a receiving space formed between the electromagnetic coil 200 and the dielectric window 120, or multiple elements can be disposed together within a receiving space formed between the electromagnetic coil 200 and the dielectric window 120. In specific implementations, the arrangement can be determined according to actual needs.

[0062] By setting at least two insulation capacitance adjustment elements 400, different insulation capacitance adjustment elements 400 can be selected for different areas during wafer processing. Multiple adjustment plates can also be arranged together in a receiving space between the electromagnetic coil 200 and the dielectric window 120, allowing multiple areas of the wafer requiring adjustment to be adjusted simultaneously, effectively improving processing efficiency. Furthermore, multiple different insulation capacitance adjustment elements 400 can be used in combination, allowing for flexible combinations to cover areas of different shapes, thereby enhancing the wafer adjustment capabilities of semiconductor process equipment.

[0063] The above embodiments of the present invention focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0064] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A semiconductor process apparatus, characterized by, The semiconductor chamber (100), the electromagnetic coil (200), the support component (300) and the insulating capacitance adjusting member (400) are provided, wherein: The semiconductor chamber (100) has an inner cavity (110), and the support component (300) is arranged in the inner cavity (110) and used for supporting a wafer; The semiconductor chamber (100) comprises a dielectric window (120) arranged opposite to the support component (300); The electromagnetic coil (200) is arranged outside the semiconductor chamber (100) and opposite to the dielectric window (120), and a containing space is formed between the electromagnetic coil (200) and the dielectric window (120); The insulating capacitance adjusting member (400) is rotatably arranged in the containing space and used for covering part of the dielectric window (120); The semiconductor process equipment further comprises a ring-shaped guide rail (500) arranged on the dielectric window (120), and the center of the ring-shaped guide rail (500) coincides with the center of the dielectric window (120); the insulating capacitance adjusting member (400) is in sliding fit with the ring-shaped guide rail (500), and the insulating capacitance adjusting member (400) can slide along the ring-shaped guide rail (500) to adjust the position of the insulating capacitance adjusting member (400) covering the dielectric window (120) in the circumferential direction around the center of the dielectric window (120).

2. The semiconductor process apparatus according to claim 1, wherein The ring-shaped guide rail (500) is provided with a ring-shaped groove (510) with an opening facing the center of the ring-shaped guide rail (500); the insulating capacitance adjusting member (400) comprises a plate-shaped body (410) and a connecting protrusion (420), the connecting protrusion (420) extends into the ring-shaped groove (510) and is in sliding fit with the ring-shaped groove (510), the connecting protrusion (420) is connected with the plate-shaped body (410), the plate-shaped body (410) is attached to the dielectric window (120) and can rotate with the connecting protrusion (420).

3. The semiconductor process apparatus according to claim 2, wherein The connecting protrusion (420) is two, and the two connecting protrusions (420) are respectively arranged at two ends of the plate-shaped body (410) adjacent to the outer side edges of the ring-shaped guide rail (500).

4. The semiconductor process apparatus according to claim 2, wherein The ring-shaped guide rail (500) is provided with a mounting hole (520) on the side wall opposite to the dielectric window (120), the mounting hole (520) is in communication with the ring-shaped groove (510), and the connecting protrusion (420) can move out of or into the ring-shaped groove (510) through the mounting hole (520).

5. The semiconductor process apparatus according to claim 2, wherein The plate-shaped body (410) is a fan-shaped structure, and the center of the fan-shaped structure coincides with the center of the ring-shaped guide rail (500).

6. The semiconductor process apparatus according to claim 1, wherein The semiconductor chamber (100) further comprises a nozzle (600) penetrating the dielectric window (120) from outside the semiconductor chamber (100) and communicating with the inner cavity (110), a center of the annular guide rail (500) is located on a central axis of the nozzle (600), and the insulating capacitance adjusting member (400) is arranged between the nozzle (600) and the annular guide rail (500), and opposite edges of the insulating capacitance adjusting member (400) are respectively in sliding fit with the nozzle (600) and the annular guide rail (500).

7. The semiconductor process apparatus according to claim 1, wherein A normal projection of the annular guide rail (500) on the dielectric window (120) is a first projection, a normal projection of the support member (300) on the dielectric window (120) is a second projection, and the first projection surrounds the second projection.

8. The semiconductor process apparatus according to claim 1, wherein The annular guide rail (500) is provided with a scale line.

9. The semiconductor process apparatus according to claim 1, wherein The number of the insulating capacitance adjusting members (400) is at least two.

Images