Integrated MEMS electrochemical angular acceleration sensor based on anodic bonding and manufacturing method

Abstract

The present invention proposes an integrated MEMS electrochemical angular acceleration sensor based on anodic bonding and a manufacturing method. The sensor includes: a glass substrate, a lead hole penetrating the glass substrate, a silicon-based substrate, an insulating groove penetrating the silicon-based substrate, a sensitive electrode, a first cathode lead, a second cathode lead, an anode lead, a glass cover plate with an annular groove on the lower surface, and an injection hole penetrating the glass cover plate. Among them, a first anodic bonding is formed between the silicon-based substrate and the glass substrate to form a substrate structure where the sensitive electrode and its lead are located; a second anodic bonding is formed between the glass cover plate and the silicon-based substrate to form a closed annular flow channel. The present invention uses anodic bonding to realize the electrode-flow channel integrated manufacturing of the MEMS electrochemical angular acceleration sensor, and the device size and electrode parameters are easy to adjust; in addition, the assembly operation is simplified, the preparation method is simple, and the device performance consistency is good.

Description

Technical Field

[0001] The present invention mainly relates to the technical field of microelectromechanical systems (MEMS) sensors and angular acceleration sensors, in particular to the technical field of MEMS electrochemical sensitive electrode manufacturing and angular acceleration sensor technology using the same, and specifically to an integrated MEMS electrochemical angular acceleration sensor based on anodic bonding and a manufacturing method. Background Art

[0002] Rotational motion, the movement of a particle around an axis, is one of the most fundamental forms of motion in nature and is widely present in the physical world. Angular acceleration is a key parameter in describing rotational motion. In the field of low-frequency vibration, accurate measurement of angular acceleration is crucial in applications such as earthquake monitoring, engineering exploration, and navigation and positioning systems.

[0003] In the field of seismology, current monitoring of seismic activity typically involves measuring translational motion signals in the east-west, north-south, and plumb bob directions. However, during an earthquake, the complete motion of a rigid body at a given point is characterized by six degrees of freedom (DOF), encompassing not only translational motion along the three axes but also rotational motion in the perpendicular plane. Rotational motion is particularly pronounced in near-field earthquakes. Due to the importance of rotational components, rotational seismology has emerged as an emerging field in recent years, studying rotational ground motions caused by earthquakes, explosions, and environmental vibrations.

[0004] Currently, there are three main types of angular acceleration sensors used for direct measurement in rotational seismology: MEMS, optical, and electrochemical. MEMS-based angular acceleration sensors have too little inertial mass, making it difficult to improve their sensitivity. They also have complex structures, are difficult to manufacture, and generate high mechanical noise, making it difficult to detect weak low-frequency signals. Large optical laser gyros or fiber optic gyros are bulky and consume high power, making them unsuitable for measuring low-frequency rotational components of earthquakes.

[0005] The angular acceleration sensor based on the electrochemical principle uses liquid inertial mass, has high impact resistance, good low-frequency performance, and low low-frequency noise, which has obvious advantages in the measurement of low-frequency earthquake rotational components. The electrochemical angular acceleration sensor is mainly composed of sensitive electrodes, annular flow channels and an electrolyte system. Among them, the sensitive electrodes are composed of two pairs of completely symmetrical anode and cathode electrode pairs, which are distributed in the annular flow channel in the order of ACCA (A represents anode and C represents cathode) or CAC; the electrolyte system, as the liquid inertial mass, is generally composed of an aqueous solution of potassium iodide and iodine, which is sealed in the annular flow channel, making the sensor insensitive to external translational motion and only sensitive to rotational motion. When a working driving voltage of 0.3V is applied to the anode and cathode electrode pairs, the following reversible redox reaction will occur on the electrode surface:

[0006] cathode:

[0007] anode:

[0008] When there is no external rotational motion, the two pairs of cathodes are symmetrically distributed, and the current is zero after differential output. When there is external rotational motion, the electrolyte will produce relative motion with the electrodes due to inertia, causing changes in the ion distribution near the electrode surface, changing the ion flux between the cathode and anode, and producing opposite changes in the current at the two pairs of cathodes. By differentially calculating these changes, the angular acceleration component of the external rotational motion can be characterized.

[0009] The sensitive electrodes of traditional electrochemical angular accelerometers are woven platinum mesh electrodes, manufactured using ceramic sintering technology. This results in a complex manufacturing process and poor consistency. Furthermore, the sensor housing is made of ceramic. When the sensitive electrodes are fixed to the ceramic housing using an epoxy resin adhesive, the curing epoxy absorbs a large amount of electrolyte, rendering the sensor inoperable. Consequently, this process is relatively costly and has poor mass production capabilities, limiting the widespread use of electrochemical angular accelerometers. In recent years, MEMS (Micro-Electro-Mechanical Systems) technology has been introduced into the design and manufacture of electrochemical angular accelerometers.

[0010] Currently, there is an electrochemical angular acceleration sensor based on MEMS sensitive electrodes. While the process is simple, its manufacturing method typically involves first using MEMS technology to produce the sensitive electrode chip. The chip is then assembled with a plexiglass housing using either physical fastening with rubber rings or UV curing with adhesive to form a complete device structure. Physical fastening with rubber rings results in low alignment accuracy, while UV curing with adhesive suffers from poor long-term stability. Both require space for the sensitive electrode leads on the plexiglass housing, making manual assembly of the device complex and inconsistent. Summary of the Invention

[0011] In order to solve the above technical problems, the present invention provides an integrated MEMS electrochemical angular acceleration sensor based on anodic bonding and a manufacturing method thereof.

[0012] In order to achieve the above object, the present invention adopts the following technical solutions:

[0013] An integrated MEMS electrochemical angular acceleration sensor based on anodic bonding includes: a glass substrate, a lead hole penetrating the glass substrate, a silicon-based substrate, an insulating trench penetrating the silicon-based substrate, a sensitive electrode, a first cathode lead, a second cathode lead, an anode lead, a glass cover plate with an annular groove on the lower surface, and a liquid injection hole penetrating the glass cover plate.

[0014] The glass substrate has a uniform thickness and a clean surface; the lead holes penetrate the upper and lower surfaces of the glass substrate;

[0015] The silicon-based substrate is formed on the upper surface of the glass substrate and forms an anodic bond with the glass substrate; the insulating trench runs through the upper and lower surfaces of the silicon-based substrate;

[0016] The sensitive electrodes are formed on the upper surface of the silicon-based substrate and are arranged in a circular tangential direction with equal spacing in the form of one or more pairs of electrode groups, each electrode group comprising a first cathode and an anode or a second cathode and an anode;

[0017] The first cathode lead is formed on the outer upper half of the circumference of the sensitive electrode and is connected to each first cathode of the electrode group;

[0018] The second cathode lead is formed on the outer lower half of the sensitive electrode and is connected to each second cathode of the electrode group;

[0019] The anode lead is formed on the inner circumference of the sensitive electrode and is connected to each anode of the electrode group;

[0020] The glass cover plate with an annular groove on its lower surface is formed on the upper surface of the silicon-based substrate and is subjected to secondary anodic bonding with the silicon-based substrate; the injection hole passes through the upper and lower surfaces of the glass cover plate.

[0021] Furthermore, the material of the glass substrate is a glass sheet. Preferably, the glass substrate is selected from BF33 glass, and has a thickness in the range of 300 μm-500 μm.

[0022] Furthermore, the lead holes are arranged in a ring array toward the electrode leads.

[0023] Furthermore, the material of the silicon-based substrate is a low-resistance silicon wafer. Preferably, the silicon substrate is selected from a silicon substrate having a crystal orientation of <100> The N-type silicon or P-type silicon has a thickness in the range of 200μm-300μm and a resistivity of less than 0.0015Ω·cm.

[0024] Furthermore, the insulating trench is etched on the silicon-based substrate using a BOSCH process.

[0025] Furthermore, the first cathode lead and the second cathode lead are symmetrically distributed along the center of the annular circle.

[0026] Furthermore, the electrode groups are arranged in an interdigitated electrode arrangement in the form of AC-AC or CA-CA, wherein A is the anode and C is the cathode; the electrode groups are connected in parallel via cathode leads and anode leads.

[0027] Furthermore, the anode, the first cathode, and the second cathode are separated by an insulating trench in the silicon-based substrate.

[0028] Furthermore, the sensitive electrode, the first cathode lead, the second cathode lead, and the anode lead face the groove.

[0029] Furthermore, the material of the glass cover plate is a glass sheet. Preferably, the glass cover plate is selected from BF33 glass and has a thickness in the range of 1 mm to 5 mm.

[0030] Furthermore, the material of the sensitive electrode, the first cathode lead, the second cathode lead, and the anode lead is metal platinum.

[0031] Furthermore, the lower surface of the glass substrate has metal platinum; the inner sidewall of the lead hole has metal platinum; the metal on the lower surface of the glass substrate is connected to the silicon-based substrate through the metal on the inner sidewall of the lead hole.

[0032] The present invention provides a method for manufacturing an integrated MEMS electrochemical angular acceleration sensor based on anodic bonding, comprising the following steps:

[0033] Step (1): selecting and cleaning a glass substrate;

[0034] Step (2): using a high-energy laser beam of a laser processing device to burn on the glass substrate to form an electrode lead hole;

[0035] Step (3): selecting and cleaning a silicon-based substrate, and performing a first anodic bonding between the silicon-based substrate and a clean glass substrate with lead holes;

[0036] Step (4): using a positive photoresist to perform coating on the upper surface of the silicon-based substrate, pre-baking, exposing, and developing to expose the positions of the sensitive electrode, the first cathode lead, the second cathode lead, and the anode lead to form an electrode sputtering mask;

[0037] Step (5): sputtering metal on the upper surface of the silicon-based substrate using a sputtering process;

[0038] Step (6): removing the photoresist mask and the metal thereon to form an electrode pattern;

[0039] Step (7): using a positive photoresist to perform coating, pre-baking, exposure, and development on the upper surface of the silicon-based substrate to expose the insulating trench position and form an insulating trench etching photoresist mask;

[0040] Step (8): using a deep silicon etching device to etch the insulating trench, the etching depth must be excessive to avoid the insulating trench structure being unable to etch into the glass layer of the primary bonding wafer due to the deep etching Lag effect; after etching, the photoresist mask is removed and the silicon-based substrate is cleaned;

[0041] Step (9): using a dry film on the lower surface of the glass substrate of the primary bonding sheet, performing exposure and development to expose the lead holes and the surrounding electrode lead areas;

[0042] Step (10): using a sputtering process to sputter metal on the electrode lead area on the lower surface of the glass substrate, the sidewall of the lead hole, and the silicon-based substrate in the hole;

[0043] Step (11): removing the dry film and the metal thereon to form an electrode lead pattern;

[0044] Step (12): selecting and preparing a glass cover plate, and processing it using a sandblasting process to form an annular groove structure on the lower surface and a liquid injection hole penetrating the glass cover plate;

[0045] Step (13): cleaning the glass cover plate and the primary bonding sheet, and performing secondary anodic bonding;

[0046] Step (14): Clean the completed integrated device, inject the electrolyte solution into the annular groove from the injection hole and seal it to complete the device manufacturing.

[0047] Beneficial effects of the present invention:

[0048] (1) The present invention adopts the anodic bonding process to realize the integrated manufacturing of electrode and flow channel, with the overall control within a few millimeters, reducing the volume and weight of the device; and the device size and sensitive electrode parameters are easy to adjust, which is conducive to the large-scale production and application of the device.

[0049] (2) The integrated MEMS electrochemical angular acceleration sensor based on anodic bonding optimizes the chip processing technology and shell assembly operation of the device, eliminating the need for manual assembly operations between the electrode chip and the sensor packaging shell, reducing the difficulty of assembly.

[0050] (3) The integrated MEMS electrochemical angular acceleration sensor based on anodic bonding has a simple preparation method, and the device manufacturing error is only generated during the equipment processing, which improves the performance consistency of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 This is a schematic diagram of the three-dimensional structure of the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding proposed in the present invention.

[0052] Figure 2 This is a cross-sectional view of the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding proposed in the present invention.

[0053] Figure 3 This is a top view of the upper surface of the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding proposed in the present invention.

[0054] Figure 4 for Figure 3 The partial enlarged view of A and B in the middle, the left side (a) is Figure 3 A partial enlarged view of the middle A, the right side (b) is Figure 3 A partial enlarged view of point B in the middle.

[0055] Figure 5 This is a process flow chart of the manufacturing method of the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding proposed by the present invention. DETAILED DESCRIPTION

[0056] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. However, the following embodiments are intended only to explain the present invention, and the scope of protection of the present invention should include the entire contents of the claims. Moreover, through the description of the following embodiments, those skilled in the art can fully implement the entire contents of the claims of the present invention.

[0057] Figure 1 This is a schematic diagram of the three-dimensional structure of the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding proposed in the present invention. The upper figure is a schematic diagram of the processed sensor, and the lower figure is a disassembled diagram of the sensor. Figure 1 As shown, the integrated MEMS electrochemical angular acceleration sensor proposed in the present invention includes a three-layer structure, namely a glass substrate 001, a silicon-based substrate 003, and a glass cover plate 009; the glass substrate 001 has multiple lead holes 002; the glass substrate 001 and the silicon-based substrate 003 are first anodic bonded to form a base structure where sensitive electrodes and electrode leads are located; the glass cover plate 009 has an annular groove 010 and a liquid injection hole 011, which are secondarily anodic bonded to the silicon-based substrate 003 to form a closed annular liquid storage cavity.

[0058] Figure 2 This is a cross-sectional view of the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding proposed by the present invention. Figure 2 As shown in the figure, the integrated MEMS electrochemical angular acceleration sensor proposed in the present invention includes a glass substrate 001, a lead hole 002, a silicon-based substrate 003, an insulating trench 004, a sensitive electrode 005, a first cathode lead 006, a second cathode lead 007, an anode lead 008, a glass cover 009, an annular groove 010, and a liquid injection hole 011. The insulating trench 004 penetrates the silicon-based substrate 003.

[0059] The lead hole 002 passes through the upper and lower surfaces of the glass substrate 001; the silicon-based substrate 003 is formed on the upper surface of the glass substrate 001 and forms the first anodic bonding with the glass substrate 001; the glass cover plate 009 is formed on the upper surface of the silicon-based substrate 003, and performs the second anodic bonding with the silicon-based substrate 003; the annular groove 010 is formed on the lower surface of the glass cover plate 009, and the injection hole 011 passes through the upper and lower surfaces of the glass cover plate 009.

[0060] Figure 3 This is a top view of the top surface of the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding proposed in the present invention. The sensor's sensitive electrodes 005 are implemented on the top surface of a silicon substrate 003, arranged in a ring-shaped, tangential arrangement in a pair or multiple pairs. A first cathode lead 006 is formed on the outer upper half of the circumference of the sensitive electrode 005; a second cathode lead 007 is formed on the outer lower half of the circumference of the sensitive electrode 005; and an anode lead 008 is formed on the inner circumference of the sensitive electrode 005.

[0061] Figure 4 for Figure 3 The partial enlarged view of A and B in the middle, the left side (a) is Figure 3 A partial enlarged view of the middle A, the right side (b) is Figure 3 A partial enlarged view of point B in the figure. Figure 3 As shown, each electrode group includes a first cathode 101 and an anode 100 or a second cathode 102 and an anode 100; the electrodes are separated by an insulating trench 004. A first cathode lead 006 is connected to each first cathode 101 of the electrode group, a second cathode lead 007 is connected to each second cathode 102 of the electrode group, and an anode lead 008 is connected to each anode 100 of the electrode group.

[0062] Figure 5 This is a process flow chart of the manufacturing method of the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding proposed in the present invention. The specific process steps are as follows:

[0063] Step (1): Select a double-sided polished, 300 μm thick four-inch BF33 glass sheet and boil it in acid and water to clean the contaminants on the surface of the glass sheet. After cleaning, it will be used as a glass substrate.

[0064] Step (2): using a high-energy laser beam of a laser processing device to burn on the glass substrate to form an electrode lead hole;

[0065] Step (3): Select and clean a silicon-based substrate, preferably, a low-resistance silicon substrate with a thickness of 200 μm and a resistivity of less than 0.0015 Ω·cm; rinse the laser-processed glass substrate with an HF solution to reduce surface roughness; perform acid boiling, water boiling, and oxygen plasma washing operations, and perform the first anodic bonding between the silicon-based substrate and the glass substrate with the lead hole;

[0066] Step (4): Spin-coating a layer of SPR220-3.0 photoresist on the upper surface of the silicon-based substrate, exposing the positions of the sensitive electrode, the first cathode lead, the second cathode lead, and the anode lead through pre-baking, exposure, and development to form an electrode sputtering mask;

[0067] Step (5): Deposit a 30nm Ti metal layer on the photoresist mask using a sputtering process, and then deposit 250nm Pt on the Ti;

[0068] Step (6): soaking the sputtered wafer in acetone to remove the SPR220-3.0 photoresist and excess metal, forming a sensitive electrode, a first cathode lead, a second cathode lead, and an anode lead;

[0069] Step (7): Spin-coating a layer of AZ4620 photoresist on the upper surface of the silicon-based substrate with a thickness of 5.5 μm, exposing the insulating trench position through pre-baking, exposure, and development to form an insulating trench etching photoresist mask;

[0070] Step (8): using a deep silicon etching device to etch the insulating trench, the etching depth must be excessive to avoid the insulating trench structure being unable to etch into the glass layer of the primary bonding sheet due to the deep etching Lag effect; after etching, use acetone and fuming nitric acid to remove the photoresist mask;

[0071] Step (9): a layer of dry film photoresist SD230 is pasted on the lower surface of the glass substrate of the primary bonding wafer, and exposed and developed to expose the lead holes and the surrounding electrode lead areas to form a dry film photoresist mask; the dry film photoresist is a negative photoresist with a thickness generally greater than 15 μm;

[0072] Step (10): using a sputtering process to deposit a layer of 60nm Ti metal on the electrode lead area on the lower surface of the glass substrate, the sidewall of the lead hole and the silicon substrate in the hole, and then depositing 300nm Pt on the Ti;

[0073] Step (11): soaking the sputtered wafer in acetone to remove the dry film photoresist and the metal thereon, thereby forming an electrode lead pattern;

[0074] Step (12): Select and prepare a glass cover plate. Preferably, a BF33 glass sheet with a thickness of 1 mm is selected and processed using a sandblasting process to form an annular groove structure with a depth of 0.5 mm and a liquid injection hole penetrating the glass cover plate.

[0075] Step (13): cleaning the glass cover plate and the primary bonding sheet, and performing secondary anodic bonding;

[0076] Step (14): Clean the completed integrated device, inject the electrolyte solution into the annular groove from the injection hole and seal it to complete the device manufacturing.

[0077] In some embodiments of the present invention, the number of lead holes may be one or more, and the shape may be circular or square.

[0078] In some embodiments of the present invention, the silicon-based substrate material used may be N-type silicon or P-type silicon;

[0079] In some embodiments of the present invention, the groove and injection hole structures on the glass cover plate can be made by sandblasting, laser processing or HF solution etching;

[0080] In some embodiments of the present invention, the glass substrate may be replaced by other materials having insulating properties, such as a silicon wafer with an oxide layer;

[0081] In some embodiments of the present invention, the metal deposited using the sputtering process may be Ti / Pt or Cr / Pt.

[0082] In some embodiments of the present invention, the electrolyte solution of potassium iodide and iodine can be replaced by other electrolyte systems capable of undergoing reversible redox reactions, including bromine-bromide, ferricyanide-ferrocyanide, and the like.

[0083] The present invention does not describe in detail parts that belong to the common knowledge of those skilled in the art. The above-described embodiments are merely descriptions of preferred embodiments of the present invention. The preferred embodiments do not describe all details in detail, nor do they limit the invention to the specific embodiments described. Without departing from the spirit of the present invention, various modifications and improvements made by those skilled in the art to the technical solution of the present invention should fall within the scope of protection defined by the claims of the present invention.

Claims

1. An integrated MEMS electrochemical angular acceleration sensor based on anodic bonding, comprising: A glass substrate, a lead hole passing through the glass substrate, a silicon-based substrate, an insulating groove passing through the silicon-based substrate, a sensitive electrode, a first cathode lead, a second cathode lead, an anode lead, a glass cover plate having an annular groove on the lower surface, and a liquid injection hole passing through the glass cover plate; wherein: The glass substrate has a uniform thickness and a clean surface; the lead holes penetrate the upper and lower surfaces of the glass substrate; The silicon-based substrate is formed on the upper surface of the glass substrate and forms an anodic bond with the glass substrate; the insulating trench runs through the upper and lower surfaces of the silicon-based substrate; The sensitive electrodes are formed on the upper surface of the silicon-based substrate and are arranged in a circular tangential direction with equal spacing in the form of one or more pairs of electrode groups, each electrode group comprising a first cathode and an anode or a second cathode and an anode; The first cathode lead is formed on the outer upper half of the circumference of the sensitive electrode and is connected to each first cathode of the electrode group; The second cathode lead is formed on the outer lower half of the sensitive electrode and is connected to each second cathode of the electrode group; The anode lead is formed on the inner circumference of the sensitive electrode and is connected to each anode of the electrode group; The glass cover plate with an annular groove on its lower surface is formed on the upper surface of the silicon-based substrate and is subjected to secondary anodic bonding with the silicon-based substrate; the injection hole passes through the upper and lower surfaces of the glass cover plate.

2. The sensor according to claim 1, characterized in that The material of the glass substrate is a glass sheet.

3. The sensor according to claim 1, wherein The lead wire holes are arranged in a circular array toward the electrode leads.

4. The sensor according to claim 1, characterized in that The material of the silicon-based substrate is a <100> N-type silicon or P-type silicon.

5. The sensor according to claim 1, wherein The insulating trench is etched on the silicon-based substrate using a BOSCH process.

6. The sensor according to claim 1, characterized in that The first cathode lead and the second cathode lead are symmetrically distributed along the center of the annular circle.

7. The sensor according to claim 1, characterized in that The electrode groups are arranged in an interdigitated electrode arrangement in the form of AC-AC or CA-CA, wherein A is the anode and C is the cathode; the electrode groups are connected in parallel via cathode leads and anode leads.

8. The sensor according to claim 1, wherein The anode, the first cathode and the second cathode are separated by insulating trenches in the silicon-based substrate.

9. The sensor according to claim 1, wherein The sensitive electrode, the first cathode lead, the second cathode lead, and the anode lead are oriented toward the groove; the glass cover is selected from BF33 glass with a thickness in the range of 1 mm to 5 mm; The materials of the sensitive electrode, the first cathode lead, the second cathode lead and the anode lead are platinum; The lower surface of the glass substrate is provided with metal platinum; the inner sidewall of the lead hole is provided with metal platinum; the metal on the lower surface of the glass substrate is connected to the silicon-based substrate through the metal on the inner sidewall of the lead hole.

10. A method for manufacturing the integrated MEMS electrochemical angular acceleration sensor based on anodic bonding according to any one of claims 1 to 9, comprising the following steps: Step (1): selecting and cleaning a glass substrate; Step (2): using a high-energy laser beam of a laser processing device to burn on the glass substrate to form an electrode lead hole; Step (3): selecting and cleaning a silicon-based substrate, and performing a first anodic bonding between the silicon-based substrate and a clean glass substrate with lead holes; Step (4): using a positive photoresist to perform coating on the upper surface of the silicon-based substrate, pre-baking, exposing, and developing to expose the positions of the sensitive electrode, the first cathode lead, the second cathode lead, and the anode lead to form an electrode sputtering mask; Step (5): sputtering metal on the upper surface of the silicon-based substrate using a sputtering process; Step (6): removing the photoresist mask and the metal thereon to form an electrode pattern; Step (7): using a positive photoresist to perform coating, pre-baking, exposure, and development on the upper surface of the silicon-based substrate to expose the insulating trench position and form an insulating trench etching photoresist mask; Step (8): using a deep silicon etching device to etch the insulating trench, the etching depth must be excessive to avoid the insulating trench structure failing to etch into the glass layer of the primary bonding wafer; After etching, remove the photoresist mask and clean the silicon substrate; Step (9): using a dry film on the lower surface of the glass substrate of the primary bonding sheet, performing exposure and development to expose the lead holes and the surrounding electrode lead areas; Step (10): using a sputtering process to sputter metal on the electrode lead area on the lower surface of the glass substrate, the sidewall of the lead hole, and the silicon-based substrate in the hole; Step (11): removing the dry film and the metal thereon to form an electrode lead pattern; Step (12): selecting and preparing a glass cover plate, and processing it using a sandblasting process to form an annular groove structure on the lower surface and a liquid injection hole penetrating the glass cover plate; Step (13): cleaning the glass cover plate and the primary bonding sheet, and performing secondary anodic bonding; Step (14): Clean the completed integrated device, inject the electrolyte solution into the annular groove from the injection hole and seal it to complete the device manufacturing.

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