High-temperature infrared photodetector based on molybdenum disulfide-erbium alloy material, preparation method and use thereof

Abstract

The application relates to a high-temperature infrared photoelectric detection device based on a molybdenum disulfide-erbium alloy material, a preparation method and use thereof. The high-temperature infrared photoelectric detection device based on the molybdenum disulfide-erbium alloy material comprises a photoelectric response component based on a channel material, the photoelectric response component comprises a substrate layer, a molybdenum disulfide-erbium single-crystal alloy material arranged on the substrate layer, and an electrode layer arranged on the molybdenum disulfide-erbium single-crystal alloy material; a display component for displaying a current signal; and a current leading-out component for transmitting an electric signal of the electrode unit to the display component. The high-temperature infrared photoelectric detection device provided by the application reduces the interference of dark current on photoelectric current, widens the wavelength detection range of the infrared photoelectric detection device, and improves the working temperature window of the infrared photoelectric detection device.

Description

Technical Field

[0001] This invention belongs to the field of two-dimensional material preparation, specifically relating to a high-temperature infrared photodetector based on molybdenum disulfide erbium alloy material, its preparation method and application. Background Technology

[0002] From early applications in the petroleum industry and geological research to current aerospace engineering and Venus exploration missions, the demand for sensors is constantly growing. For example, the need for broadband photodetectors in extreme environments (high temperature, high pressure, high humidity, etc.) is extremely urgent, particularly in fields such as interstellar exploration, supersonic vehicles, and night vision imaging. Broadband photodetectors capable of operating at high temperatures will provide a significant advantage for future intelligent sensors working in extreme environments.

[0003] However, broadband photodetectors capable of operating at high temperatures currently face the following problems:

[0004] (1) Currently, high-temperature photodetectors operate at low temperatures. Most commercial standard electronic products cannot operate above 260°C due to factors such as increased leakage current and reduced dielectric breakdown strength.

[0005] (2) Even though the high-temperature photodetector can achieve high-temperature detection, its detection range is narrow and cannot meet the requirements of broadband infrared detection. Although some materials of groups III-V and IV have higher high-temperature performance than Si devices and can meet the requirements of high-temperature (HOT) electronics and optoelectronics, especially diamond, SiC and AlN, for example, SiC metal-semiconductor-metal (MSM) photodetectors have been proven to work at 350°C. However, unfortunately, they are all wide-bandgap materials, so they can only perform limited detection in the ultraviolet or deep ultraviolet regions and cannot meet the requirements of high-temperature broadband photodetection.

[0006] (3) The increase in dark current is detrimental to photoelectric detection. As the operating temperature rises, a large number of intrinsically excited charge carriers will be generated in the high-temperature photoelectric detector, resulting in an increase in dark current. This causes stray light to bring background radiation noise at higher operating temperatures, which in particular seriously interferes with the imaging of long-wave infrared detectors.

[0007] Two-dimensional transition metal chalcogenides (TMDs) possess unique physical properties and direct band gaps, giving them a natural advantage in optoelectronics. Compared to graphene, TMDs exhibit higher sensitivity and lower dark current, and demonstrate significant optical sensing performance at room temperature. A monolayer MoS2 photodetector achieves a photoresponsivity of 880 A / W. However, TMD electronic / optoelectronic devices perform poorly at high temperatures: MoS2 begins to oxidize and degrade in air at 300°C, producing numerous triangular pits on its surface; WSe2 sheets also begin to oxidize in air at 300°C, hindering their application in harsh environments such as aerospace and the exploration of their optoelectronic properties at ultra-high temperatures.

[0008] Therefore, there is a need in the field to develop an infrared photoelectric detector that can operate at higher temperatures and meets the requirements for broadband infrared light detection. Summary of the Invention

[0009] To address the shortcomings of existing technologies, one objective of this invention is to provide a high-temperature infrared photodetector based on a molybdenum disulfide erbium alloy material, comprising:

[0010] An infrared photodetector based on a molybdenum disulfide erbium alloy material, characterized in that the detector comprises:

[0011] The photoelectric response component based on the channel material includes a substrate layer, a molybdenum disulfide erbium single crystal alloy material disposed on the substrate layer, and an electrode layer disposed on the molybdenum disulfide erbium single crystal alloy material. The electrode layer includes at least two electrode units, and the two electrode units span across the same molybdenum disulfide erbium single crystal alloy crystal of the molybdenum disulfide erbium single crystal alloy material.

[0012] Display component, used to display current signals;

[0013] A current-derivation component is electrically connected to an electrode unit spanning a crystal of the same molybdenum disulfide erbium single-crystal alloy and the display component, for transmitting electrical signals from the electrode unit to the display component.

[0014] The high-temperature infrared photodetector provided in this application uses molybdenum disulfide erbium single crystal alloy as the channel material. Utilizing the high carrier mobility of the molybdenum disulfide erbium single crystal alloy, the interference of dark current on photocurrent is reduced, thus improving the detection sensitivity of the infrared photodetector. Furthermore, the broad spectral response of the molybdenum disulfide erbium single crystal alloy in the 532nm–2200nm range is utilized to broaden the wavelength detection range of the infrared photodetector. Finally, the high-temperature resistance of the erbium-sulfur bonds in the molybdenum disulfide erbium single crystal alloy is utilized to improve the operating temperature window of the infrared photodetector, enabling it to operate at high temperatures.

[0015] The term "high temperature" refers to an operating temperature that can cover room temperature to a higher operating temperature, such as room temperature - 300°C.

[0016] Preferably, the molybdenum disulfide erbium single crystal alloy comprises a single-layer molybdenum disulfide erbium single crystal and / or a multi-layer molybdenum disulfide erbium alloy.

[0017] Preferably, the thickness of the multilayer molybdenum disulfide erbium alloy is 1 to 10 nm, such as 2 nm, 3 nm, 5 nm, 7 nm, 8 nm, 9 nm, etc., and more preferably 2 to 8 nm.

[0018] When the molybdenum disulfide erbium single crystal alloy is a multilayer molybdenum disulfide erbium crystal, it often exhibits shorter device response turn-on and turn-off times.

[0019] Preferably, the crystal size of the molybdenum disulfide erbium single crystal alloy is ≥10μm, such as 11μm, 14μm, 18μm, 20μm, etc.

[0020] Preferably, the erbium doping amount of the molybdenum disulfide erbium single crystal alloy is 3-12%, such as 4%, 6%, 8%, 10%, 11%, 13%, 15%, etc., and more preferably 8-12%.

[0021] The crystal size of the molybdenum disulfide erbium single crystal alloy is too small, the channel material length is too short, and the requirements for the preparation process of the electrode layer are too high.

[0022] Preferably, the operating temperature window of the infrared photodetector is room temperature - 300°C.

[0023] Preferably, the detection wavelength range of the infrared photodetector is 532nm to 2200nm.

[0024] Preferably, the electrode layer is any one or a combination of at least two of metallic chromium, metallic nickel, metallic gold, and metallic palladium;

[0025] Preferably, the electrode layer is a gold layer attached to the chromium layer.

[0026] The potential barrier (work function) mismatch between elemental gold and the molybdenum disulfide erbium single crystal alloy leads to a large contact resistance, which in turn reduces device performance. Choosing a gold layer attached above the chromium layer as the electrode prevents the gold electrode from detaching and being damaged by weak van der Waals forces; it also reduces the Schottky barrier at the metal electrode-material contact.

[0027] Preferably, the electrode unit includes any one or a combination of at least two of the following: electrode block, electrode wire, and electrode contact.

[0028] Preferably, the substrate layer is a silicon dioxide-silicon material layer.

[0029] The current-conducting component can be any conductive component, such as copper wire, gold wire, silver wire, tungsten needle, etc., all of which can be used in this application.

[0030] The second objective of this application is to provide a method for preparing a high-temperature infrared photodetector based on a molybdenum disulfide erbium alloy material as described in the first objective, the method comprising the following steps:

[0031] S1 provides a substrate material plate, a current extraction component, and a display component;

[0032] S2 transfers molybdenum disulfide erbium alloy material onto the substrate material plate to form a substrate material plate-molybdenum disulfide erbium alloy material layer structure;

[0033] S3 forms an electrode layer containing at least two electrode units on the surface of the structure of the substrate plate-molybdenum disulfide erbium alloy material layer, and the electrode units span the same crystal of the molybdenum disulfide erbium alloy material of S2.

[0034] S4 electrically connects the current-delivering component, the display component, and the electrode unit on the same crystal across the molybdenum disulfide erbium alloy material.

[0035] Preferably, the molybdenum disulfide erbium alloy material in step S2 is prepared by the following method:

[0036] (1) Place an open reaction boat in the central area of ​​the tubular furnace, and place an erbium source and a molybdenum source inside the reaction boat. Then cover it with 4A molecular sieve, place the growth substrate upside down on the open reaction boat, and leave a gap for the carrier gas to flow through.

[0037] (2) In the tubular furnace, sulfur powder is placed upstream along the airflow direction;

[0038] (3) Inert carrier gas of 70-90 sccm is introduced to purge the air in the quartz tube. The tube furnace is then heated to 180-250°C at the sulfur powder placement position and 950-1150°C at the reaction boat (e.g., 1000°C, 1050°C, 1100°C, etc.) to deposit erbium, molybdenum, and sulfur elements and obtain molybdenum disulfide erbium alloy material.

[0039] Preferably, the covering thickness of the 4A molecular sieve (crushed) is 1-3 mm.

[0040] Preferably, the erbium source and the molybdenum source are placed separately in the reaction boat.

[0041] Preferably, the gas flow gap includes an upstream gap and a downstream gap arranged along the gas flow direction.

[0042] When the thickness of the 4A molecular sieve (after crushing) is 1-2 nm and the temperature is above 1050℃, it is easier to grow multilayer molybdenum disulfide erbium alloy.

[0043] Preferably, in step S3, the process of forming the electrode layer includes the following steps:

[0044] S301 A mask is laid on the surface of the structure of the substrate material plate-molybdenum disulfide erbium alloy material layer;

[0045] S302 involves vapor-depositing chromium onto a structure with a photomask.

[0046] S303 continues to deposit gold on top of the chromium-deposited structure.

[0047] Preferably, the chromium vapor deposition thickness in step S302 is 8–12 nm;

[0048] Preferably, the thickness of the gold vapor deposition in step S303 is 45-55 nm.

[0049] The third objective of this application is to provide an application for a high-temperature infrared photodetector based on molybdenum disulfide erbium alloy material as described in the first objective, wherein the device is used in a high-temperature photodetector.

[0050] Preferably, the device is used in any one of infrared-guided missiles, high-temperature thermal infrared imagers, fire safety imaging, or space exploration sensors.

[0051] Compared with the prior art, this application has the following beneficial effects:

[0052] The high-temperature infrared photodetector provided in this application reduces the interference of dark current on photocurrent and improves the sensitivity of the infrared photodetector to photocurrent; it obtains a broad spectral effect in the range of 532nm to 2200nm, thus broadening the wavelength detection range of the infrared photodetector; and it improves the operating temperature window of the infrared photodetector, enabling it to operate at high temperatures. Attached Figure Description

[0053] Figure 1 This is an atomic force microscope (AFM) image of the molybdenum disulfide erbium single crystal material obtained in Example 1.

[0054] Figure 2 This is an atomic force microscopy (AFM) image of the erbium disulfide single crystal material obtained in Example 2.

[0055] Figure 3 This is an atomic force microscope scanning image of the molybdenum disulfide erbium single crystal material obtained in Example 3;

[0056] Figure 4This is an atomic force microscope (AFM) image of the erbium disulfide single crystal material obtained in Example 4.

[0057] Figure 5 An optical photograph of the photoelectric response component based on the channel material of the infrared photodetector device of Example 1;

[0058] Figure 6 The photocurrent response curves of the semiconductor device provided in Example 1 at excitation wavelengths of 532nm, 980nm, 1550nm and 2200nm over time;

[0059] Figure 7 The photocurrent of the semiconductor device provided in Example 1 as a function of laser power density at excitation wavelengths of 532 nm, 980 nm, 1550 nm and 2200 nm;

[0060] Figure 8 Photoelectric response diagrams of the photodetector device provided for Comparative Example 1 at different wavelengths;

[0061] Figure 9 Photoelectric response time diagram of the photodetector device at 532 nm provided for Comparative Example 1;

[0062] Figure 10 The photoelectric time response diagram of the infrared photodetector device in Example 1 at 1550nm is shown.

[0063] Figure 11 The photoelectric response signal of the infrared photodetector device in Example 4 is shown in the range of 300K to 573K.

[0064] Figure 12 The dark current I of the photodetector device provided for Comparative Example 1 dark Curve showing the change with temperature;

[0065] Figure 13 The curve showing the change of dark current of the infrared photodetector at 1550 nm as a function of temperature provided in Example 1;

[0066] Figure 14 The curve showing the change of dark current of the infrared photodetector at 1850 nm as a function of temperature provided in Example 2;

[0067] Figure 15 The curve showing the change of dark current of the infrared photodetector at 1550 nm as a function of temperature provided in Example 3;

[0068] Figure 16 The curve showing the change of dark current of the infrared photodetector at 1850 nm with temperature is provided in Example 4. Detailed Implementation

[0069] The technical solution of the present invention will be further explained and described below with reference to specific embodiments. However, it should be noted that the specific embodiments are only a specific implementation and explanation of the essence of the technical solution of the present invention, and should not be construed as a limitation on the scope of protection of the present invention.

[0070] The reagents and instruments used in the examples are all commercially available, and the detection methods are conventional methods well known in the art.

[0071] Preparation Example 1

[0072] A method for preparing molybdenum disulfide erbium single crystal material includes:

[0073] (1) Clean the cut SiO2 / Si substrate to remove impurities from the surface of the SiO2 / Si substrate, blow dry, and set aside.

[0074] (2) Place an open reaction boat in the central area of ​​the tubular furnace, and place 10 mg of molybdenum trioxide (MoO3) as a molybdenum source, 1 mg of NaCl as an auxiliary agent, and 10 mg of erbium oxide (Er2O3) as an Er precursor in the reaction boat. The molybdenum source and the erbium source are placed separately, and then a 2 mm thick 4A molecular sieve (crushed) is covered on it. The substrate obtained in step (1) is placed on the open reaction boat, and a gap is left for the carrier gas to flow through. Place 80 mg of sulfur powder (S) as a sulfur source upstream of the tubular furnace.

[0075] (3) Argon gas (Ar) is introduced at room temperature to purge the air from the quartz tube, ensuring that the entire growth process is carried out in an inert atmosphere. Argon gas at 80 sccm is used as a carrier gas to transfer the sulfur source. The tube furnace is heated to above 200°C at the location of the sulfur source and to 900°C at the location of the reaction boat to deposit erbium, molybdenum and sulfur elements for 10 min, thereby obtaining molybdenum disulfide erbium single crystal material.

[0076] Performance characterization:

[0077] The molybdenum disulfide erbium disulfide single crystal material obtained in Example 1 was scanned by atomic force microscopy. Figure 1 The image shown is an atomic force microscope scan of the molybdenum disulfide erbium single crystal material obtained in Example 1. It can be seen that the thickness of the molybdenum disulfide erbium single crystal material obtained in Example 1 is 0.75 nm, which is a single-layer structure.

[0078] The molybdenum disulfide erbium single crystal material obtained in Example 1 was characterized by high-angle annular dark-field scanning transmission electron microscopy. The atomic ratio of molybdenum to erbium at multiple locations was calculated and the average value was obtained. The erbium doping content of the monolayer molybdenum disulfide erbium single crystal material obtained in Example 1 was approximately 10%.

[0079] Preparation Example 2

[0080] A method for preparing molybdenum disulfide erbium single crystal material includes:

[0081] (1) Clean the cut SiO2 / Si substrate to remove impurities from the surface of the SiO2 / Si substrate, blow dry, and set aside.

[0082] (2) Place an open reaction boat in the central area of ​​the tubular furnace, and place 10 mg of molybdenum trioxide (MoO3) as a molybdenum source, 1 mg of NaCl as an auxiliary agent, and 10 mg of erbium oxide (Er2O3) as an Er precursor in the reaction boat. The molybdenum source and the erbium source are placed separately, and then a 2 mm thick 4A molecular sieve (crushed) is covered on it. The substrate obtained in step (1) is placed on the open reaction boat, and a gap is left for the carrier gas to flow through. Place 80 mg of sulfur powder (S) as a sulfur source upstream of the tubular furnace.

[0083] (3) Argon gas (Ar) is introduced at room temperature to remove the air in the quartz tube, ensuring that the entire growth process is carried out in an inert atmosphere. Argon gas at 80 sccm is used as a carrier gas to transfer the sulfur source. The tube furnace is heated to above 200°C at the location of the sulfur source and to 1000°C at the location of the reaction boat to deposit erbium, molybdenum and sulfur elements for 10 min, thereby obtaining molybdenum disulfide erbium single crystal material.

[0084] Performance characterization:

[0085] The molybdenum disulfide erbium disulfide single crystal material obtained in Example 2 was scanned by atomic force microscopy. Figure 2 The image shown is an atomic force microscope scan of the molybdenum disulfide erbium single crystal material obtained in Example 2. It can be seen that the thickness of the molybdenum disulfide erbium single crystal material obtained in Example 2 is 0.80 nm, which is a single-layer structure.

[0086] The molybdenum disulfide erbium single crystal material obtained in Example 2 was characterized by high-angle annular dark-field scanning transmission electron microscopy. The erbium doping content of the monolayer molybdenum disulfide erbium single crystal material obtained in Example 2 was calculated to be approximately 12%.

[0087] Preparation Example 3

[0088] The difference from Preparation Example 1 is that in step (3), argon gas (Ar) is first introduced at room temperature to remove the air in the quartz tube, ensuring that the entire growth process is carried out in an inert atmosphere. Argon gas at 80 sccm is used as the carrier gas for the transfer of the sulfur source. The tube furnace is heated to above 200°C at the location of the sulfur source and to 1050°C at the location of the reaction boat to deposit erbium, molybdenum and sulfur elements for 10 min, thereby obtaining molybdenum disulfide erbium single crystal material.

[0089] Performance characterization:

[0090] The molybdenum disulfide erbium disulfide single crystal material obtained in Example 3 was scanned by atomic force microscopy. Figure 3 The image shown is an atomic force microscope scan of the molybdenum disulfide erbium single crystal material obtained in Example 3. It can be seen that the thickness of the molybdenum disulfide erbium single crystal material obtained in Example 3 is 7 nm, and it has a multilayer structure.

[0091] Preparation Example 4

[0092] The difference from Preparation Example 1 is that in step (3), argon gas (Ar) is first introduced at room temperature to remove the air in the quartz tube, ensuring that the entire growth process is carried out in an inert atmosphere. Argon gas at 80 sccm is used as a carrier gas to transport the sulfur source. The tube furnace is heated to above 200°C at the location of the sulfur source and to 1100°C at the location of the reaction boat to deposit erbium, molybdenum and sulfur elements for 10 min, thereby obtaining molybdenum disulfide erbium single crystal material.

[0093] Performance characterization:

[0094] The molybdenum disulfide erbium single crystal material obtained in Example 4 was scanned using an atomic force microscope. Figure 4 The image shown is an atomic force microscope scan of the molybdenum disulfide erbium single crystal material obtained in Example 4. It can be seen that the thickness of the molybdenum disulfide erbium single crystal material obtained in Example 4 is 9 nm, and it has a multilayer structure.

[0095] Examples 1-4

[0096] A method for fabricating an infrared photodetector based on a molybdenum disulfide erbium alloy material includes the following steps:

[0097] S1 provides a substrate material board (silicon dioxide / silicon material layer substrate board, with a silicon dioxide layer thickness of 280-300nm), a current extraction component (tungsten probe), and a display component (source meter);

[0098] S2 transfers the molybdenum disulfide erbium alloy material obtained in the preparation example onto the substrate material plate to form a substrate material plate-molybdenum disulfide erbium alloy material layer structure; the transfer step specifically includes:

[0099] (1) Place the grown molybdenum disulfide erbium alloy on the spin coater turntable, then spin coat a layer of PMMA on the sample surface. Then start the spin coater to work at a low speed of 800 rpm / min and a high speed of 3000 rpm / min for 8s and 60s respectively, so that the PMMA is evenly covered on the prepared sample film.

[0100] (2) Place the spin-coated sample on a heating table and heat it at 120°C for 3 minutes to cure the PMMA and obtain a PMMA support film.

[0101] (3) Cut a “window” in 3M tape that is slightly smaller than the base and then attach it to the edge of the base;

[0102] (4) Place the sample with the "window" attached into 80°C ultrapure water and soak the sample in ultrapure water for more than 3 hours to separate the PMMA membrane with the sample from the SiO2 / Si substrate.

[0103] (5) The separated PMMA film with the alloy sample attached is attached to the substrate material plate (silicon dioxide / silicon material layer substrate plate), and then heated on a hot stage at 70°C for 30 min.

[0104] (6) After the PMMA film is tightly bonded to the substrate and the moisture on the substrate surface has evaporated, remove the 3M tape pasted around the perimeter. Finally, use acetone to remove the adhesive and remove the PMMA film to obtain the structure of the substrate material board-molybdenum disulfide erbium alloy material layer.

[0105] S3 covers the surface of the molybdenum disulfide erbium alloy material layer structure (the surface of the molybdenum disulfide erbium alloy material layer) with a copper mesh (a 400-mesh square transmission electron microscope copper mesh microgrid without a substrate film, with a rib width of 23 μm and a square hole side length of 38 μm) as a mask. Then, a 10 nm thick layer of metallic chromium is first deposited using a thermal evaporation coating machine, followed by a 50 nm thick layer of gold. Finally, the copper mesh is removed to obtain the electrode layer. During the copper mesh covering process, at least two adjacent grids of the copper mesh need to span the same crystal of the molybdenum disulfide erbium alloy material in S2.

[0106] S4 electrically connects the current-deriving component, the display component, and the electrode unit on the same crystal across the molybdenum disulfide erbium alloy material to obtain an infrared photodetector.

[0107] Example 1 uses the molybdenum disulfide erbium single crystal material prepared in Example 1; Example 2 uses the molybdenum disulfide erbium single crystal material prepared in Example 2; Example 3 uses the molybdenum disulfide erbium single crystal material prepared in Example 3; Example 4 uses the molybdenum disulfide erbium single crystal material prepared in Example 4.

[0108] Figure 5 This is an optical photograph of the channel material-based photoelectric response component of the infrared photodetector device of Example 1. From... Figure 5 As can be seen, in the photoelectric response component based on channel material of the infrared photodetector device in Example 1, two adjacent electrode units span the same crystal of molybdenum disulfide erbium alloy material.

[0109] Comparative Example 1

[0110] The difference from Example 1 is that the molybdenum disulfide erbium alloy material is replaced with molybdenum disulfide material.

[0111] The molybdenum disulfide material is prepared by the following method:

[0112] (1) Clean the cut SiO2 / Si substrate to remove impurities from the surface of the SiO2 / Si substrate, blow dry, and set aside.

[0113] (2) Place an open reaction boat in the center of the tubular furnace and place 10 mg of molybdenum trioxide (MoO3) in the reaction boat as a molybdenum source. Then cover it with a 2 mm thick 4A molecular sieve (crushed). Place the substrate obtained in step (1) on the open reaction boat and leave a gap for the carrier gas to flow through. Place 80 mg of sulfur powder (S) upstream of the tubular furnace as a sulfur source.

[0114] (3) Argon gas (Ar) is introduced at room temperature to remove the air in the quartz tube and ensure that the entire growth process is carried out in an inert atmosphere. Argon gas at 80 sccm is used as a carrier gas to transfer the sulfur source. The tubular furnace is heated to above 200°C at the location of the sulfur source and to 900°C at the location of the reaction boat to deposit molybdenum and sulfur elements for 10 min to obtain molybdenum disulfide material.

[0115] The fabrication of photodetector devices using molybdenum disulfide material includes the following steps:

[0116] S1 provides a substrate material board (silicon dioxide / silicon material layer substrate board, with a silicon dioxide layer thickness of 280-300nm), a current extraction component (tungsten probe), and a display component (source meter);

[0117] S2 transfers the molybdenum disulfide material obtained in the preparation example onto the substrate material plate to form a substrate material plate-molybdenum disulfide material layer structure;

[0118] S3 covers the surface of the substrate material plate-molybdenum disulfide erbium alloy material layer structure with a copper mesh as a mask, and then uses a thermal evaporation coating machine to first evaporate 10 nm of metallic chromium, then evaporate 50 nm of gold, and finally remove the copper mesh to obtain the electrode layer; during the copper mesh covering process, it is necessary to make at least two adjacent grids of the copper mesh span the same crystal of the molybdenum disulfide erbium alloy material in S2.

[0119] S4 electrically connects the current-deriving component, the display component, and the electrode unit on the same crystal across the molybdenum disulfide erbium alloy material to obtain a photodetector.

[0120] Performance testing:

[0121] (1) The semiconductor devices provided in Example 1 and Comparative Example 1 were subjected to photoelectric testing in a vacuum chamber detection station with a temperature control unit using a KEITHLEY 2614B. The test light was a monochromatic laser source, and the test wavelengths were 532nm, 980nm, 1550nm, 1850nm and 2200nm.

[0122] The test period was set to 5 seconds, the wavelength to 532 nm (power density 12.7 mW / cm²). 2 ), 980nm (power density 11.9mW / cm²) 2 ), 1550nm (power density 20.6mW / cm²) 2 ), 1850nm (power density 12.07mW / cm²) 2 The photocurrent response curve of the infrared photodetector device provided in Example 1 was measured over time at an excitation wavelength of 2200 nm. Figure 6 The photocurrent response curves of the semiconductor device provided in Example 1 at excitation wavelengths of 532 nm, 980 nm, 1550 nm, and 2200 nm over time show that the device provided in Example 1 exhibits stable periodic response at different wavelengths and has a broadband effect. The other examples also showed a broadband (532–2200 nm) effect in experiments.

[0123] The dependence of photocurrent and laser power density of the infrared photodetector device provided in Example 1 under 532nm, 980nm, 1550nm, and 2200nm laser irradiation is analyzed. Figure 7 The photocurrent of the semiconductor device provided in Example 1 as a function of laser power density at excitation wavelengths of 532 nm, 980 nm, 1550 nm, and 2200 nm shows that the photocurrent increases with increasing power density, exhibiting sensitivity to light intensity and suitable for detecting light intensity across a wide spectrum. The other examples also demonstrated sensitivity to light intensity across a wide spectrum (532–2200 nm) in experiments.

[0124] like Figures 8-10 ( Figure 8 The photoelectric response diagrams of the photodetector provided in Comparative Example 1 at different wavelengths are shown. Figure 9 Photoelectric response time diagram of the photodetector device at 532 nm provided for Comparative Example 1; Figure 10 As shown in the photoelectric time response diagram of the infrared photodetector device at 1550nm in Example 1, regarding the device response time, since MoS2 has no photoelectric response current at 1550nm ( Figure 8 Therefore, the response time of the photodetector in Comparative Example 1 at 532 nm was measured, and its rise (on) and fall (off) times were 55 ms and 204 ms, respectively. Figure 9 The rise and fall times of the infrared photodetector obtained in Example 1 at 1550 nm were 32 ms and 33 ms, respectively. Figure 10The rise and fall times for Example 2 are 31 ms and 40 ms, respectively; for Example 3, they are 24 ms and 39 ms, respectively; and for Example 4, they are 35 ms and 35 ms, respectively. It can be seen that the rise and fall times of the photodetectors provided in these examples are significantly shorter than those of Comparative Example 1 at 532 nm in the infrared wavelength range (e.g., the test wavelength of 1550 nm). In other words, the photodetector provided in this application has a shorter turn-on and turn-off time.

[0125] (2) The photodetector provided in the examples and comparative examples is placed on a laser signal generator (RIGOL DG1022) with a bias voltage of 2V and a wavelength of 1850nm. The photoresponse current under heating conditions (300K~573K) is measured to determine whether there is a photoresponse current at this temperature. Figure 11 The photoelectric response signal of the infrared photodetector device in Example 4 is given in the range of 300K to 573K. Figure 11 It can be seen that the infrared photodetector of Example 4 still exhibits a significant photoelectric signal at 573K (300℃). The operating temperature of Example 1 is from... Figure 6 It can be seen that the other embodiments also have a broad-spectrum (532-2200nm) photoelectric response in the range of 300K to 573K.

[0126] (3) The current flowing in the light-receiving elements of solar cells, photodiodes, photoconductive elements, phototubes, etc., in the absence of light is called dark current. The dark current of the molybdenum disulfide photodetector (Comparative Example 1) increases sharply with increasing temperature. Figure 12 The dark current I of the photodetector device provided for Comparative Example 1 dark (Curve of temperature variation).

[0127] The infrared photodetector provided in this application has a weak temperature response to dark current, meaning it is not very sensitive to temperature and is more suitable for high-temperature operation, especially multilayer molybdenum disulfide erbium single crystal material. Figure 13 The curve showing the change of dark current of the infrared photodetector at 1550 nm with temperature is provided in Example 1. Figure 14 The curve showing the change of dark current of the infrared photodetector at 1850 nm with temperature provided in Example 2. Figure 15 The curve showing the change of dark current of the infrared photodetector at 1550 nm with temperature provided in Example 3. Figure 16 The curve showing the change of dark current of the infrared photodetector at 1850 nm as a function of temperature is provided in Example 4. Figures 13-16It can be seen that the infrared photodetectors provided in Examples 1 to 4 have dark current fluctuations of less than 0.02 to 0.25 μA in the infrared wavelength range and temperature range of 300 to 480 k, which is much smaller than the 5.5 μA of Comparative Example 1.

[0128] Comparative Example 2

[0129] The difference from Preparation Example 1 is that step (2) does not involve laying 4A molecular sieves, and the sulfur source, molybdenum source, erbium source, and substrate are placed separately and sequentially. The method specifically includes:

[0130] (1) The cut SiO2 / Si substrate was ultrasonicated for 10 minutes each with deionized water, acetone, ethanol and deionized water to remove the adhesive protective layer on the surface of the SiO2 / Si substrate. Then the substrate surface was dried with a nitrogen gun and set aside.

[0131] (2) In a tube furnace, 80 mg of sulfur powder (S) as a sulfur source, 10 mg of molybdenum trioxide (MoO3) as a molybdenum source, 1 mg of NaCl and 10 mg of erbium oxide (Er2O3) as erbium sources, and the SiO2 / Si substrate of step (1) are placed sequentially along the airflow direction.

[0132] (3) Argon gas (Ar) is introduced at room temperature to purge the air from the quartz tube, ensuring that the entire growth process is carried out in an inert atmosphere. Argon gas at 80 sccm is used as a carrier gas to transport the sulfur source. The tube furnace is heated to above 200°C at the location of the sulfur source and to 950°C at the locations of the erbium and molybdenum sources. The location of the SiO2 / Si substrate is heated to 800°C and held for 40 min to deposit erbium, molybdenum and sulfur elements to obtain an erbium-doped molybdenum disulfide film.

[0133] Characterization by optical microscopy revealed that its crystal quality was very poor, its thickness was very uneven, and it contained many impurities. It was impossible to obtain qualified molybdenum disulfide erbium alloy material; only erbium-doped molybdenum disulfide thin films could be obtained.

[0134] After photoelectric testing, it was found that its start-up and stop-down current times were 3.3s and 5.2s, respectively. The start-up time was relatively long, and the response spectrum was only 532-980nm, which could not achieve the spectral response of infrared light.

[0135] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high temperature infrared photodetector device based on molybdenum disulfide-erbium alloy material, characterized in that, The detection device includes: The photoelectric response component based on the channel material includes a substrate layer, a molybdenum disulfide erbium single crystal alloy material disposed on the substrate layer, and an electrode layer disposed on the molybdenum disulfide erbium single crystal alloy material. The electrode layer includes at least two electrode units, and the two electrode units span across the same molybdenum disulfide erbium single crystal alloy crystal of the molybdenum disulfide erbium single crystal alloy material. Display component, used to display current signals; A current-derivation component is electrically connected to an electrode unit spanning a crystal of the same molybdenum disulfide erbium single-crystal alloy and the display component, for transmitting electrical signals from the electrode unit to the display component.

2. The high-temperature infrared photoelectric detector device as described in claim 1, characterized in that, The molybdenum disulfide erbium single crystal alloy includes single-layer molybdenum disulfide erbium single crystal and / or multi-layer molybdenum disulfide erbium alloy.

3. The high-temperature infrared photoelectric detector device as described in claim 2, characterized in that, The thickness of the multilayer molybdenum disulfide erbium is 1~10 nm.

4. The high-temperature infrared photodetector device as described in claim 1 or 2, characterized in that, The crystal size of the molybdenum disulfide erbium single crystal alloy is ≥10μm.

5. The high-temperature infrared photodetector device as described in claim 1 or 2, characterized in that, The erbium doping content of the molybdenum disulfide erbium single crystal alloy is 3~12%.

6. The high-temperature infrared photodetector device as described in claim 1 or 2, characterized in that, The erbium doping content of the molybdenum disulfide erbium single crystal alloy is 8~12%.

7. The high-temperature infrared photodetector as described in claim 1, characterized in that, The operating temperature window of the infrared photodetector is room temperature - 300℃.

8. The high-temperature infrared photodetector as described in claim 1, characterized in that, The detection wavelength range of the infrared photoelectric detector is 532nm~2200nm.

9. The high-temperature infrared photodetector device as described in claim 1, characterized in that, The electrode layer is any one or a combination of at least two of the following: metallic chromium, metallic nickel, metallic gold, and metallic palladium.

10. The high-temperature infrared photodetector as described in claim 1, characterized in that, The electrode layer is a gold layer attached to a chromium layer.

11. The high-temperature infrared photodetector device as described in claim 1, characterized in that, The electrode unit includes any one or a combination of at least two of the following: electrode block, electrode wire, and electrode contact.

12. The high-temperature infrared photodetector according to claim 1 or 2, characterized in that, The substrate layer is a silicon dioxide-silicon material layer.

13. A method for preparing a high-temperature infrared photodetector based on a molybdenum disulfide erbium alloy material as described in any one of claims 1 to 12, characterized in that, The preparation method includes the following steps: S1 provides a substrate material plate, a current extraction component, and a display component; S2 transfers molybdenum disulfide erbium alloy material onto the substrate material plate to form a substrate material plate-molybdenum disulfide erbium alloy material layer structure; S3 forms an electrode layer comprising at least two electrode units on the surface of the structure of the base material plate-molybdenum disulfide erbium alloy material layer, and the electrode units span the same crystal of the molybdenum disulfide erbium alloy material of S2. S4 electrically connects the current-exporting component, the display component, and the electrode unit on the same crystal across the molybdenum disulfide erbium alloy material.

14. The preparation method according to claim 13, characterized in that, The molybdenum disulfide erbium alloy material in step S2 is prepared by the following method: (1) Place an open reaction boat in the central area of ​​the tubular furnace, and place an erbium source and a molybdenum source inside the reaction boat. Then cover it with 4A molecular sieve, place the growth substrate upside down on the open reaction boat, and leave a gap for the carrier gas to flow. (2) In the tubular furnace, sulfur powder is placed upstream along the airflow direction; (3) Inert carrier gas of 70~90 sccm is introduced to purge the air in the quartz tube. The tube furnace is heated until the sulfur powder placement position reaches 180~250℃ and the reaction boat reaches 950~1150℃. Erbium, molybdenum and sulfur elements are deposited to obtain molybdenum disulfide erbium alloy material.

15. The preparation method according to claim 13, characterized in that, In step S3, the process of forming the electrode layer includes the following steps: S301 A mask is laid on the surface of the structure of the substrate material plate-molybdenum disulfide erbium alloy material layer; S302 involves vapor-depositing chromium onto a structure with a photomask. S303 continues to deposit gold on top of the chromium-deposited structure.

16. The preparation method according to claim 15, characterized in that, The thickness of the chromium vapor deposition in step S302 is 8~12nm.

17. The preparation method according to claim 15, characterized in that, The thickness of the gold vapor deposition in step S303 is 45~55nm.

18. The use of a high-temperature infrared photodetector based on a molybdenum disulfide erbium alloy material as described in any one of claims 1 to 12, characterized in that, The device is used in high-temperature photodetectors.

19. The use as described in claim 18, characterized in that, The device is used in any one of infrared-guided missiles, high-temperature thermal infrared imagers, fire safety imaging, or space exploration sensors.

Images