Optical proximity correction method and system, apparatus, and storage medium

Abstract

An optical proximity correction method, system, device, and storage medium are disclosed. The method includes: acquiring a periodic region comprising multiple arrayed, periodically repeating minimum repeating units, wherein the repeating period of the minimum repeating units along the row direction is a first period, and the repeating period of the minimum repeating units along the column direction is a second period; in a layout graphic layer, adjacent main graphics with a spacing of the first period along the row direction and a spacing of the second period along the column direction are marked using color-coded markers, the color-coded markers being used to mark the main graphics split onto the same photomask; based on the splitting markers, the color-coded markers, and the number of photomask splits, the multiple main graphics in the layout graphic layer are subjected to graphic splitting processing to split the multiple main graphics into multiple photomasks. This embodiment of the invention ensures the regularity of the main graphics in the multiple photomasks after splitting and the consistency of the surrounding environment, which is beneficial for quickly replicating the graphic correction results under the same environment.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to an optical proximity correction method and system, device and storage medium. Background Technology

[0002] With the development of semiconductor technology and the reduction of critical device dimensions, the number and density of patterns on the layout have increased dramatically. It has become increasingly impossible to expose all patterns onto the wafer at once during the photolithography process. Multi-Patterning (MP) technology has become a necessary means to ensure that the exposed patterns meet the process requirements of each node.

[0003] Multiple exposure technology splits the pattern on the layout onto multiple photomasks, and through multiple exposures, all the patterns on the layout can be transferred to the wafer with good quality.

[0004] However, it is currently not possible to efficiently decompose periodically repeating patterns. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide an optical proximity correction method, system, device and storage medium to achieve the orderly splitting of periodically repeating patterns, so that the patterns on multiple masks after splitting are still periodically repeating patterns, and the pattern arrangement on different masks is consistent.

[0006] To address the aforementioned problems, this invention provides an optical proximity correction method, comprising: acquiring a layout graphic layer to be split, the layout graphic layer including multiple main graphics; marking adjacent main graphics with critical splitting position relationships in the layout graphic layer using splitting marks; acquiring a periodic region in the layout graphic layer, the periodic region including multiple arrayed periodically repeating minimum repeating units, the repeating period of the minimum repeating unit along the row direction being a first period, and the repeating period of the minimum repeating unit along the column direction being a second period; marking adjacent main graphics in the layout graphic layer with a spacing of the first period along the row direction and a spacing of the second period along the column direction using the same color mark, the same color mark being used to mark the main graphics split onto the same photomask; and performing graphic splitting processing on the multiple main graphics in the layout graphic layer based on the splitting marks, the same color mark, and the number of splits of the photomask, to split the multiple main graphics into multiple photomasks.

[0007] Accordingly, this invention also provides an optical proximity correction system, comprising: a layout acquisition module for acquiring a layout graphic layer to be split, the layout graphic layer including multiple main graphics; a splitting mark module for marking adjacent main graphics with critical splitting position relationships in the layout graphic layer using splitting marks; a period acquisition module for acquiring periodic regions in the layout graphic layer, the periodic regions including multiple arrayed periodically repeating minimum repeating units, the repeating period of the minimum repeating unit along the row direction being a first period, and the repeating period of the minimum repeating unit along the column direction being a second period; a same-color mark module for marking adjacent main graphics in the layout graphic layer with a spacing of the first period along the row direction and a spacing of the second period along the column direction using same-color marks, the same-color marks being used to mark main graphics split onto the same photomask; and a graphic splitting module for performing graphic splitting processing on multiple main graphics in the layout graphic layer based on the splitting marks, the same-color marks, and the number of splits of the photomask, for splitting multiple main graphics into multiple photomasks.

[0008] Accordingly, embodiments of the present invention also provide an apparatus including at least one memory and at least one processor, wherein the memory stores one or more computer instructions, and the one or more computer instructions are executed by the processor to implement the optical proximity correction method provided in the embodiments of the present invention.

[0009] Accordingly, embodiments of the present invention also provide a storage medium storing one or more computer instructions, which are used to implement the optical proximity correction method provided in embodiments of the present invention.

[0010] Compared with the prior art, the technical solution of the embodiments of the present invention has the following advantages:

[0011] The optical proximity correction method provided in this invention obtains periodic regions in a layout pattern layer. Furthermore, it uses color markers to mark adjacent main patterns in the layout pattern layer with a spacing of a first period along the row direction and a spacing of a second period along the column direction. These color markers are used to mark main patterns split onto the same photomask. Then, based on the splitting markers, the color markers, and the number of photomask splits, multiple main patterns in the layout pattern layer are split into multiple photomasks. This allows adjacent main patterns with a spacing of a first period along the row direction and a spacing of a second period along the column direction to be split into the same photomask. This helps maintain consistency in the splitting results within each smallest repeating unit, thereby ensuring the regularity of the main patterns in the split photomasks and the consistency of the surrounding environment. It also facilitates the rapid replication of pattern correction results under the same environment, reducing the computational load and time of electronic automation tools. Furthermore, it helps ensure the consistency of pattern correction results within periodic regions, thereby improving the consistency of the patterns subsequently formed on the wafer.

[0012] In the optical proximity correction system provided in this embodiment of the invention, the period acquisition module is used to acquire periodic regions in the layout pattern layer, and the same-color marking module is used to mark adjacent main patterns in the layout pattern layer with a spacing of the first period along the row direction and a spacing of the second period along the column direction using the same-color marking. The same-color marking is used to mark the main patterns split onto the same photomask. The pattern splitting module is used to perform pattern splitting processing on multiple main patterns in the layout pattern layer based on the splitting marking, the same-color marking, and the number of photomask splits, to split multiple main patterns into multiple photomasks, thereby enabling adjacent main patterns with a spacing of the first period along the row direction and a spacing of the second period along the column direction to be split into the same photomask. This is beneficial to ensure that the splitting results in each minimum repeating unit are consistent, thereby ensuring the regularity of the main patterns in the multiple photomasks after splitting and the consistency of the surrounding environment. It is also beneficial to quickly replicate the pattern correction results under the same environment, thereby reducing the computational load and computation time of electronic automation tools, and also to ensure the consistency of the pattern correction results in the periodic region, thereby improving the consistency of the pattern formed on the wafer. Attached Figure Description

[0013] Figure 1 This is a flowchart of an optical proximity correction method;

[0014] Figure 2 It is a schematic diagram of a graphic layer of a layout;

[0015] Figure 3 It is to utilize Figure 1 Optical proximity correction method for Figure 2A schematic diagram showing the graphic layer of the layout after graphic decomposition.

[0016] Figure 4 This is a flowchart of an embodiment of the optical proximity correction method provided by the present invention;

[0017] Figure 5 and Figure 6 This is a schematic diagram of an embodiment of a periodic region in a graphic layer of a layout;

[0018] Figure 7 It is to utilize Figure 4 Optical proximity correction method in Figure 5 and Figure 6 A schematic diagram of multiple photomasks obtained after the graphic layers in the layout are split into multiple images;

[0019] Figure 8 This is a functional block diagram of an embodiment of the optical proximity correction system provided by the present invention;

[0020] Figure 9 This is a hardware structure diagram of an embodiment of the device provided by the present invention. Detailed Implementation

[0021] As can be seen from the background technology, it is currently impossible to efficiently decompose periodically repeating graphics.

[0022] Figure 1 This is a flowchart of an optical proximity correction method.

[0023] like Figure 1 The optical proximity correction method shown includes:

[0024] Step S10: Obtain the layout graphic layer to be split, which includes multiple main graphics;

[0025] Step S20: Mark adjacent main graphics with critical splitting position relationships in the layout graphic layer using split markers;

[0026] Step S30: Based on the splitting mark and the number of splits of the mask, perform graphic splitting processing on multiple main graphics in the layout graphic layer to split multiple main graphics into multiple masks.

[0027] In the process of splitting multiple main graphics in the layout graphics layer, random splitting is usually performed. For periodic regions with repetitive graphics in the layout graphics layer, the graphics on each photomask after splitting will become disordered, and their environment will no longer be regular. This makes the environment for optical proximity correction of the periodic region irregular and complex, making it impossible to quickly replicate the optical proximity correction results under the same environment. This can greatly increase the computational load and runtime of electronic design automation tools (EDA tools), and can further lead to differences in the profile of graphics in the periodic region, ultimately affecting chip performance.

[0028] For example, taking a periodic region as an SRAM (Static Random-Access Memory) region as an example, before splitting, the graph of the SRAM region is as follows: Figure 2 As shown. In utilizing Figure 1 Optical proximity correction method for Figure 2 After the SRAM region is split into four images, the images on the four photomasks are as follows: Figure 3 As shown, the patterns on the four photomasks 101, 102, 103, and 104 are randomly distributed, which is not conducive to subsequent optical proximity correction of the patterns on the photomasks.

[0029] To address the technical problem, embodiments of the present invention provide an optical proximity correction method. Figure 4 This is a flowchart of an embodiment of the optical proximity correction method provided by the present invention.

[0030] As an example, the optical proximity correction method in this embodiment includes the following basic steps:

[0031] Step S1: Obtain the layout graphic layer to be split. The layout graphic layer includes multiple main graphics.

[0032] Step S2: Mark adjacent main graphics with critical splitting position relationships in the layout graphic layer using split markers;

[0033] Step S3: Obtain the periodic region in the layout graphic layer. The periodic region includes multiple arrayed periodically repeating minimum repeating units. The repeating period of the minimum repeating unit along the row direction is the first period, and the repeating period of the minimum repeating unit along the column direction is the second period.

[0034] Step S4: In the layout graphic layer, use the same color marker to mark adjacent main graphics with a spacing of the first cycle along the row direction and a spacing of the second cycle along the column direction. The same color marker is used to mark the main graphics that are split onto the same photomask.

[0035] Step S5: Based on the split markers and color markers, as well as the number of splits of the photomask, perform graphic splitting processing on multiple main graphics in the layout graphic layer to split multiple main graphics into multiple photomasks.

[0036] The optical proximity correction method provided in this invention obtains periodic regions in a layout pattern layer. Furthermore, it uses color markers to mark adjacent main patterns in the layout pattern layer with a spacing of a first period along the row direction and a spacing of a second period along the column direction. These color markers are used to mark main patterns split onto the same photomask. Then, based on the splitting markers, the color markers, and the number of photomask splits, multiple main patterns in the layout pattern layer are split into multiple photomasks. This allows adjacent main patterns with a spacing of a first period along the row direction and a spacing of a second period along the column direction to be split into the same photomask. This helps maintain consistency in the splitting results within each smallest repeating unit, thereby ensuring the regularity of the main patterns in the split photomasks and the consistency of the surrounding environment. It also facilitates the rapid replication of pattern correction results under the same environment, reducing the computational load and time of electronic automation tools. Furthermore, it helps ensure the consistency of pattern correction results within periodic regions, thereby improving the consistency of the patterns subsequently formed on the wafer.

[0037] To make the above-mentioned objects, features and advantages of the embodiments of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0038] refer to Figure 4 Step S1: Obtain the layout graphic layer to be split. The layout graphic layer includes multiple main graphics.

[0039] Among them, the layout graphic layer is the layout graphic to be split into graphics.

[0040] In this embodiment, the layout graphics layer may include multiple main graphics, which are arranged at intervals within the layout graphics layer. For example, they may be arranged in a regular or irregular interval pattern.

[0041] Specifically, obtain the layout graphic layer of the GDS file and read in the main graphic that needs to be split.

[0042] Continue to refer to Figure 4 Step S2: In the layout graphic layer, use a separator to mark adjacent main graphics that have a critical splitting position relationship.

[0043] In this embodiment, the critical splitting position relationship is defined by graphical splitting rules.

[0044] Adjacent main graphics refer to main graphics that are adjacent in position within the layout graphic. For example, they can be horizontally adjacent, vertically adjacent, or diagonally adjacent. This application does not impose any restrictions on this.

[0045] In this embodiment, the split marker is used to mark adjacent main graphics that have a critical split position relationship. That is, in the subsequent step of splitting the graphic layer of the layout, the adjacent main graphics marked by the split marker cannot be placed in the same photomask.

[0046] In one embodiment, when acquiring the layout graphics layer of the GDS file and reading in the main graphics that need to be split, the positional relationship between the main graphics in the layout graphics can be obtained accordingly. For example, it can be the minimum spacing between the main graphics. Then, based on the minimum spacing between the main graphics, it is determined whether the spacing between adjacent main graphics has a critical splitting positional relationship.

[0047] Specifically, the step of marking adjacent main graphics with critical splitting positional relationships using splitting marks in the layout graphic layer may include: determining the adjacent positional relationship between main graphics based on the positional relationship between main graphics in the layout graphic layer; when the adjacent positional relationship between main graphics is that they are adjacent main graphics, obtaining the minimum spacing between adjacent main graphics; determining whether adjacent main graphics have critical splitting positional relationships based on the minimum spacing, and marking the adjacent main graphics with splitting marks when it is determined that they have critical splitting positional relationships.

[0048] As an example, the critical splitting positional relationship can include: the spacing between adjacent main graphics is less than the critical splitting spacing. Therefore, splitting markers are used to mark adjacent main graphics whose spacing is less than the critical splitting spacing.

[0049] Specifically, in conjunction with the previous example, the step of determining whether adjacent main graphics have a critical splitting position relationship based on the minimum spacing can include: when it is determined that two main graphics are adjacent main graphics, it is further determined whether the minimum spacing between the adjacent main graphics is less than the critical splitting spacing, and when it is determined that the minimum spacing between the adjacent main graphics is less than the critical splitting spacing, it is determined that the adjacent main graphics have a critical splitting position relationship, and then the splitting mark is marked.

[0050] In this embodiment, the critical splitting spacing may vary depending on the size of the semiconductor device or the requirements of the photolithography process. Therefore, the corresponding critical splitting spacing can be determined according to the size of the device and / or the requirements of the photolithography process, and then the spacing between adjacent main patterns in the layout pattern can be determined.

[0051] Reference Figures 4 to 6 , Figure 5 This is a schematic diagram of an embodiment of a periodic region in a graphic layer of a layout. Figure 6 yes Figure 5 A partial schematic diagram is shown. Step S3 is executed: The periodic region 200 in the layout graphic layer is obtained. The periodic region 200 includes multiple arrayed, periodically repeating minimum repeating units 300, along the row direction (e.g., ...). Figure 5 The repeating period of the smallest repeating unit 300 (as shown in the X direction) is the first period D1, along the column direction (e.g., Figure 5 (As shown in the Y direction) The repetition period of the smallest repeating unit 300 is the second period D2.

[0052] Obtain the repetition period of the periodic region 200 and the smallest repeating unit 300 along the row and column directions, so that adjacent main graphics with a spacing of the first period D1 along the row direction and a spacing of the second period D2 along the column direction can be marked with the same color mark.

[0053] In this embodiment, the periodic region 200 includes a storage region. Within the storage region, there are typically multiple regularly arranged storage units to perform the storage function. Correspondingly, the smallest repeating unit is a storage unit.

[0054] In this embodiment, the periodic region 200 including the SRAM region is used as an example for illustration.

[0055] Continue to refer to Figure 4 Step S4: In the layout graphic layer, use the same color mark to mark the adjacent main graphics with a spacing of the first period D1 along the row direction and a spacing of the second period D2 along the column direction. The same color mark is used to mark the main graphics split onto the same photomask.

[0056] Based on the repetition period of the smallest repeating unit 300 along the row and column directions, the main graphic is marked with the same color. This means that the main graphic under this periodic relationship can be placed on the same photomask. This is beneficial because after subsequent graphic splitting processing, the splitting results in each smallest repeating unit 300 within the final periodic region will be completely consistent. This ensures that the graphic in a single photomask still inherits the periodic pattern of the original periodic region, and the graphic structure between multiple photomasks can also remain consistent. As a result, the environment around the main graphic located at the same position in each smallest repeating unit 300 can remain consistent.

[0057] Continue to refer to Figure 4 Step S5: Based on the split markers and color markers, as well as the number of splits of the photomask, perform graphic splitting processing on multiple main graphics in the layout graphic layer, so as to split multiple main graphics into multiple photomasks.

[0058] In the above embodiments, based on the splitting markers and color markers, as well as the number of photomask splits, multiple main graphics in the layout graphic layer are split into multiple photomasks. This splits the multiple main graphics into multiple photomasks, thereby enabling adjacent main graphics with a row spacing of the first period D1 and a column spacing of the second period D2 to be split into the same photomask. This helps to ensure that the splitting results in each minimum repeating unit are consistent, which in turn helps to ensure the regularity of the main graphics in the multiple photomasks after splitting and the consistency of the surrounding environment. This facilitates the rapid replication of graphic correction results under the same environment, thereby reducing the computational load and time of electronic automation tools. It also helps to ensure the consistency of graphic correction results in periodic areas, thereby improving the consistency of the graphics formed on the wafer.

[0059] It should be noted that in the step of splitting multiple main graphics in the graphic layer of the layout, the priority of the splitting mark is higher than that of the same color mark, so that there will be no conflict between the graphics on the split single photomask, thereby ensuring the normal progress of the subsequent photolithography process.

[0060] Reference Figure 7 This diagram illustrates multiple photomasks obtained after splitting a layout graphic layer using the optical proximity correction method of this embodiment. As an example, the number of photomasks is two; therefore, the main graphic is split into two photomasks 201 and 202.

[0061] like Figure 7 As shown, the splitting results in the two photomasks 201 and 202 are consistent, which helps to ensure the regularity of the main pattern in multiple photomasks and the consistency of the surrounding environment. This facilitates the rapid replication of pattern correction results under the same environment, thereby reducing the computational load and time of electronic automation tools. It also helps to ensure the consistency of pattern correction results in periodic areas, thereby improving the consistency of the patterns formed on the wafer.

[0062] Accordingly, the present invention also provides an optical proximity correction system. Figure 8 This is a functional block diagram of an embodiment of the optical proximity correction system of the present invention.

[0063] refer to Figure 8The optical proximity correction system 40 includes: a layout acquisition module 41, used to acquire a layout graphic layer to be split, the layout graphic layer including multiple main graphics; a split marking module 42, used to mark adjacent main graphics with critical split position relationships in the layout graphic layer using split markings; a period acquisition module 43, used to acquire periodic regions in the layout graphic layer, the periodic regions including multiple arrayed periodically repeating minimum repeating units, the repeating period of the minimum repeating unit along the row direction is the first period, and the repeating period of the minimum repeating unit along the column direction is the second period; a same-color marking module 44, used to mark adjacent main graphics in the layout graphic layer with a spacing of the first period along the row direction and a spacing of the second period along the column direction using same-color markings, the same-color markings are used to mark main graphics split onto the same photomask; and a graphic splitting module 45, used to perform graphic splitting processing on multiple main graphics in the layout graphic layer based on the split markings, same-color markings, and the number of splits of the photomask, for splitting multiple main graphics into multiple photomasks.

[0064] The period acquisition module 43 is used to acquire periodic regions in the layout graphic layer. The same color marking module 44 is used to mark adjacent main graphics in the layout graphic layer with a spacing of the first period along the row direction and a spacing of the second period along the column direction using the same color marking. The same color marking is used to mark the main graphics split onto the same photomask. The graphic splitting module 45 is used to perform graphic splitting processing on multiple main graphics in the layout graphic layer based on the splitting marking, the same color marking, and the number of photomask splits. This is used to split multiple main graphics into multiple photomasks, thereby enabling adjacent main graphics with a spacing of the first period along the row direction and a spacing of the second period along the column direction to be split into the same photomask. This is beneficial to ensure that the splitting results in each minimum repeating unit are consistent, which in turn helps to ensure the regularity of the main graphics in the multiple photomasks after splitting and the consistency of the surrounding environment. This is beneficial to quickly copy the graphic correction results under the same environment, thereby reducing the computational load and computation time of electronic automation tools. It also helps to ensure the consistency of graphic correction results in periodic regions, thereby improving the consistency of the graphics formed on the wafer.

[0065] The layout acquisition module 41 is used to acquire the layout graphic layer to be split, which includes multiple main graphics.

[0066] Among them, the layout graphic layer is the layout graphic to be split into graphics.

[0067] In this embodiment, the layout graphics layer may include multiple main graphics, which are arranged at intervals within the layout graphics layer. For example, they may be arranged in a regular or irregular interval pattern.

[0068] Specifically, the layout acquisition module 41 acquires the layout graphic layer of the GDS file and reads in the main graphic that needs to be split.

[0069] The splitting marker module 42 is used to mark adjacent main graphics with critical splitting position relationships in the layout graphics layer using splitting markers.

[0070] In this embodiment, the critical splitting position relationship is defined by graphical splitting rules.

[0071] Adjacent main graphics refer to main graphics that are adjacent in position within the layout graphic. For example, they can be horizontally adjacent, vertically adjacent, or diagonally adjacent. This application does not impose any restrictions on this.

[0072] In this embodiment, the split marker is used to mark adjacent main graphics that have a critical split position relationship. That is, when the graphic splitting module 45 performs graphic splitting processing on the layout graphic layer, the adjacent main graphics marked by the split marker cannot be placed in the same photomask.

[0073] In one embodiment, when acquiring the layout graphics layer of the GDS file and reading in the main graphics that need to be split, the positional relationship between the main graphics in the layout graphics can be obtained accordingly. For example, it can be the minimum spacing between the main graphics. Then, based on the minimum spacing between the main graphics, it is determined whether the spacing between adjacent main graphics has a critical splitting positional relationship.

[0074] Specifically, marking adjacent main graphics with critical splitting positional relationships using splitting marks in the layout graphic layer can include: determining the adjacent positional relationship between main graphics based on the positional relationship between main graphics in the layout graphic layer; when the adjacent positional relationship between main graphics is that they are adjacent main graphics, obtaining the minimum spacing between adjacent main graphics; determining whether adjacent main graphics have critical splitting positional relationships based on the minimum spacing, and marking the adjacent main graphics with splitting marks when it is determined that they have critical splitting positional relationships.

[0075] As an example, the critical splitting positional relationship can include: the spacing between adjacent main graphics is less than the critical splitting spacing. Therefore, the splitting marking module 42 uses splitting marks to mark adjacent main graphics whose spacing is less than the critical splitting spacing.

[0076] Specifically, in conjunction with the previous example, determining whether adjacent main graphics have a critical splitting positional relationship based on the minimum spacing can include: when it is determined that two main graphics are adjacent main graphics, it is further determined whether the minimum spacing between the adjacent main graphics is less than the critical splitting spacing, and when it is determined that the minimum spacing between the adjacent main graphics is less than the critical splitting spacing, it is determined that the adjacent main graphics have a critical splitting positional relationship, and then the splitting mark is marked.

[0077] In this embodiment, the critical splitting spacing may vary depending on the size of the semiconductor device or the requirements of the photolithography process. Therefore, the corresponding critical splitting spacing can be determined according to the size of the device and / or the requirements of the photolithography process, and then the spacing between adjacent main patterns in the layout pattern can be determined.

[0078] Reference Figures 5 to 6 , Figure 5 This is a schematic diagram of an embodiment of a periodic region in a graphic layer of a layout. Figure 6 yes Figure 5 A partial schematic diagram shows that the periodicity acquisition module 43 is used to acquire periodic regions 200 in the layout graphic layer. The periodic regions 200 include multiple arrayed, periodically repeating minimum repeating units 300, arranged along the row direction (e.g., ...). Figure 5 The repeating period of the smallest repeating unit 300 (as shown in the X direction) is the first period D1, along the column direction (e.g., Figure 5 (As shown in the Y direction) The repetition period of the smallest repeating unit 300 is the second period D2.

[0079] The period acquisition module 43 is used to acquire the repetition period of the periodic region 200 and the minimum repeating unit 300 in the row direction and column direction, so that the same color marking module 44 can use the same color marking to mark the adjacent main graphics with a spacing of the first period D1 in the row direction and a spacing of the second period D2 in the column direction.

[0080] In this embodiment, the periodic region 200 includes a storage region. Within the storage region, there are typically multiple regularly arranged storage units to perform the storage function. Correspondingly, the smallest repeating unit is a storage unit.

[0081] In this embodiment, the periodic region 200 including the SRAM region is used as an example for illustration.

[0082] The same-color marking module 44 sets the same-color marking on the main graphic according to the repeating period of the smallest repeating unit 300 along the row and column directions. That is, the main graphic under this periodic relationship can be placed on the same photomask. This is beneficial to ensure that the splitting results in each smallest repeating unit 300 in the final periodic region will be completely consistent. This allows the graphic in a single photomask to still inherit the periodic pattern in the original periodic region, and the graphic structure between multiple photomasks can also be kept consistent. In turn, the environment around the main graphic located in the same position in each smallest repeating unit 300 can be kept consistent.

[0083] The pattern splitting unit 45 performs pattern splitting processing on multiple main patterns in the layout pattern layer based on splitting marks, color marks, and the number of photomasks split. This splits multiple main patterns into multiple photomasks, enabling adjacent main patterns with a row spacing of the first period D1 and a column spacing of the second period D2 to be split into the same photomask. This helps to ensure that the splitting results in each minimum repeating unit are consistent, thereby ensuring the regularity of the main patterns in the multiple photomasks after splitting and the consistency of the surrounding environment. This facilitates the rapid replication of pattern correction results under the same environment, reducing the computational load and time of electronic automation tools. It also helps to ensure the consistency of pattern correction results in periodic areas, thereby improving the consistency of the patterns formed on the wafer.

[0084] It should be noted that the priority of the split marker is higher than that of the same color marker, so as to ensure that there is no conflict between the patterns on the split individual photomasks, thereby ensuring the normal progress of the photolithography process.

[0085] Reference Figure 7 This diagram illustrates multiple photomasks obtained after splitting the graphic layer of the layout. As an example, the photomasks are split into two parts; therefore, the main graphic is split into two photomasks, 201 and 202.

[0086] like Figure 7 As shown, the splitting results in the two photomasks 201 and 202 are consistent, which helps to ensure the regularity of the main pattern in multiple photomasks and the consistency of the surrounding environment. It also helps to quickly replicate the pattern correction results under the same environment, thereby reducing the computational load and time of electronic automation tools. Furthermore, it helps to ensure the consistency of the pattern correction results in periodic areas, thereby improving the consistency of the patterns formed on the wafer in the future.

[0087] This invention also provides a device that can implement the optical proximity correction method provided in this invention by loading the above-described optical proximity correction method in the form of a program.

[0088] An optional hardware structure for the terminal device provided in this embodiment of the invention can be as follows: Figure 9 As shown, it includes: at least one processor 01, at least one communication interface 02, at least one memory 03, and at least one communication bus 04.

[0089] In this embodiment, the number of processor 01, communication interface 02, memory 03 and communication bus 04 is at least one, and processor 01, communication interface 02 and memory 03 communicate with each other through communication bus 04.

[0090] Communication interface 02 can be an interface for a communication module used for network communication, such as the interface of a GSM module.

[0091] Processor 01 may be a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits configured to implement embodiments of the present invention.

[0092] Memory 03 may include high-speed RAM memory, and may also include non-volatile memory (NVM), such as at least one disk storage device.

[0093] The memory 03 stores one or more computer instructions, which are executed by the processor 01 to implement the optical proximity correction method provided in this embodiment of the invention.

[0094] It should be noted that the aforementioned terminal device may also include other devices (not shown) that may not be essential to understanding the content disclosed in the embodiments of the present invention; given that these other devices may not be essential for understanding the content disclosed in the embodiments of the present invention, the embodiments of the present invention will not describe them one by one.

[0095] This invention also provides a storage medium storing one or more computer instructions for implementing the optical proximity correction method provided in this invention.

[0096] Embodiments of the present invention can be implemented by various means, such as hardware, firmware, software, or combinations thereof.

[0097] In hardware configurations, the method according to an exemplary embodiment of the present invention can be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc.

[0098] In firmware or software configuration, embodiments of the present invention can be implemented in the form of modules, processes, functions, etc. Software code can be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and can send data to and receive data from the processor via various known means.

[0099] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. An optical proximity correction method, characterized in that, include: Obtain the layout graphic layer to be split, the layout graphic layer including multiple main graphics; In the graphic layer of the layout, adjacent main graphics with critical splitting position relationships are marked by splitting marks. The adjacent main graphics marked by the splitting marks are not placed in the same photomask, and the critical splitting position relationship includes: the distance between adjacent main graphics is less than the critical splitting distance. Obtain the periodic region in the layout graphic layer. The periodic region includes multiple arrayed periodically repeating minimum repeating units. The repeating period of the minimum repeating unit along the row direction is the first period, and the repeating period of the minimum repeating unit along the column direction is the second period. In the graphic layer of the layout, adjacent main graphics with a spacing of the first period along the row direction and a spacing of the second period along the column direction are marked with the same color mark. The same color mark is used to mark the main graphics that are split onto the same photomask. Based on the splitting markers and color markers, as well as the number of splits in the photomask, multiple main graphics in the layout graphic layer are split into multiple photomasks.

2. The optical proximity correction method as described in claim 1, characterized in that, The critical splitting position relationship is determined based on graphical splitting rules.

3. The optical proximity correction method as described in claim 1, characterized in that, The periodic region includes a storage region.

4. The optical proximity correction method as described in claim 1 or 3, characterized in that, The periodic region includes an SRAM region.

5. The optical proximity correction method as described in claim 1, characterized in that, In the step of splitting multiple main graphics in the layout graphic layer, the priority of the splitting mark is higher than the priority of the same color mark.

6. The optical proximity correction method as described in claim 1, characterized in that, The step of marking adjacent main graphics with critical splitting positions in the graphic layer of the layout using split markers includes: Based on the positional relationship between the main graphics in the graphic layer of the layout, determine the adjacent positional relationship between the main graphics. When the adjacent position relationship between the main graphics is that they are adjacent main graphics, obtain the minimum spacing between the adjacent main graphics; Based on the minimum spacing, determine whether the adjacent main graphics have a critical splitting position relationship, and when it is determined that the adjacent main graphics have a critical splitting position relationship, mark the adjacent main graphics with splitting marks.

7. An optical proximity correction system, characterized in that, include: The layout acquisition module is used to acquire the layout graphic layer to be split, wherein the layout graphic layer includes multiple main graphics; The splitting marker module is used to mark adjacent main graphics with critical splitting position relationships in the layout graphic layer using splitting markers. The adjacent main graphics marked by the splitting markers are not placed in the same photomask, and the critical splitting position relationship includes: the distance between adjacent main graphics is less than the critical splitting distance, so that the splitting marker module can mark adjacent main graphics with a distance less than the critical splitting distance using splitting markers. The period acquisition module is used to acquire periodic regions in the layout graphic layer. The periodic regions include multiple arrayed periodically repeating minimum repeating units. The repeating period of the minimum repeating unit along the row direction is the first period, and the repeating period of the minimum repeating unit along the column direction is the second period. The same-color marking module is used to mark adjacent main graphics in the layout graphic layer with a spacing of a first period along the row direction and a spacing of a second period along the column direction using the same-color marking. The same-color marking is used to mark the main graphics split onto the same photomask. The graphic splitting module is used to perform graphic splitting processing on multiple main graphics in the layout graphic layer based on the splitting mark and the same color mark, as well as the number of splits of the photomask, and to split the multiple main graphics into multiple photomasks.

8. A device, characterized in that, It includes at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the optical proximity correction method as described in any one of claims 1-6.

9. A storage medium, characterized in that, The storage medium stores one or more computer instructions for implementing the optical proximity correction method as described in any one of claims 1-6.

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