Light emitting diode epitaxial wafer and preparation method thereof, LED

By introducing a composite undoped GaN layer with a specific structure into the epitaxial structure of a light-emitting diode, the problems of poor crystal quality and high dislocation density caused by the AlGaN layer are solved, thereby improving the luminous efficiency.

CN117457819BActive Publication Date: 2026-05-29JIANGXI ZHAO CHI SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JIANGXI ZHAO CHI SEMICON CO LTD
Filing Date
2023-10-20
Publication Date
2026-05-29

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Abstract

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof and an LED, and the light emitting diode epitaxial wafer comprises a substrate, a buffer layer, a composite non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer are sequentially arranged on the substrate; the composite non-doped GaN layer comprises a SiN layer, a nitrogen-polarity AlInGaN layer, a non-doped GaN layer, a BN layer and a nitrogen-polarity InGaN layer which are sequentially stacked on the buffer layer. The light emitting diode epitaxial wafer provided by the application can reduce the defect density of a GaN epitaxial layer, improve the crystal quality of the GaN epitaxial layer, improve the crystal quality of the multi-quantum well layer, reduce the polarization effect of the multi-quantum well layer and improve the light emitting efficiency of the light emitting diode.
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Citation Information

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