Light-emitting devices and their fabrication methods, display devices

Abstract

This disclosure provides a light-emitting device and its fabrication method, as well as a display device, belonging to the field of display technology, which can solve the problem of low luminous efficiency of existing light-emitting devices. The light-emitting device of this disclosure includes: a substrate, a light-emitting diode located on the substrate, and a color conversion layer located on the side of the light-emitting diode facing away from the substrate; the light-emitting device also includes: nano-metal particles; multiple grooves are formed on the surface of the light-emitting diode facing away from the substrate; the nano-metal particles are filled in the grooves.

Description

Technical Field

[0001] This disclosure belongs to the field of display technology, specifically relating to a light-emitting device and its preparation method, and a display device. Background Technology

[0002] Quantum dots (QDs), as novel luminescent materials, possess advantages such as high light purity, high quantum efficiency, tunable color emission, and long lifespan, making them a current research hotspot in novel luminescent materials. Therefore, quantum dot luminescent devices using quantum dot materials as the luminescent layer have become a major research direction for novel display devices.

[0003] In quantum dot light-emitting devices, the light emitted by the light-emitting diode (LED) serves as excitation light. This excitation light illuminates the color conversion layer, which then converts the excitation light into different colors, enabling the display product to achieve a full-color display effect. However, the luminous efficiency of the LEDs in current quantum dot light-emitting devices is relatively low, and the color conversion efficiency of the color conversion layer is also low, failing to meet the requirements of current display products. Summary of the Invention

[0004] This disclosure aims to at least solve one of the technical problems existing in the prior art, and to provide a light-emitting device, a method for preparing the same, and a display device.

[0005] In a first aspect, embodiments of this disclosure provide a light-emitting device, wherein the light-emitting device includes: a substrate, a light-emitting diode located on the substrate, and a color conversion layer located on the side of the light-emitting diode facing away from the substrate; the light-emitting device further includes: nano-metal particles;

[0006] The surface of the light-emitting diode facing away from the substrate has multiple grooves;

[0007] The nano-metal particles fill the groove.

[0008] Optionally, the light-emitting device further includes: a metal layer;

[0009] The metal layer is located on the side of the color conversion layer opposite to the substrate.

[0010] Optionally, the light-emitting diode includes: a first doped semiconductor layer and a second doped semiconductor layer disposed opposite to each other, and a quantum well layer located between the first doped semiconductor layer and the second doped semiconductor layer;

[0011] The groove is formed on the surface of the second doped semiconductor layer opposite to the substrate.

[0012] Optionally, the depth of the groove is less than the thickness of the second doped semiconductor layer.

[0013] Optionally, the light-emitting diode further includes: a current spreading layer;

[0014] The current spreading layer is located on the side of the second doped semiconductor layer away from the substrate.

[0015] Optionally, the color conversion layer includes: a transparent conductive material layer and a quantum dot material layer;

[0016] The transparent conductive material layer is located on the side of the current spreading layer away from the substrate, and the surface of the transparent conductive material layer away from the substrate is linear or grid-like.

[0017] The quantum dot material layer is located on the side of the transparent conductive layer that is away from the substrate.

[0018] Optionally, the color conversion layer comprises a mixture of a transparent conductive material and a quantum dot material.

[0019] Optionally, the transparent conductive material includes at least one of graphene, carbon nanotubes, and nano-metal particles.

[0020] Optionally, the color conversion layer comprises: a quantum dot material;

[0021] The surface of the current spreading layer opposite to the substrate has multiple pores;

[0022] The quantum dot material fills the pores.

[0023] Optionally, the surface of the plurality of pores has an opposite charge potential to the surface of the quantum dot material.

[0024] Optionally, the thickness of the current spreading layer is 10 nanometers to 100 nanometers.

[0025] Optionally, the diameter of the pores is from 10 nanometers to 100 nanometers.

[0026] Optionally, the nano-metal particles are made of the same material as the metal layer.

[0027] Optionally, the material of the nano-metal particles includes at least one of silver, gold, platinum, palladium, and iridium.

[0028] Optionally, the diameter of the nano-metal particles is less than or equal to 100 nanometers;

[0029] The spacing between adjacent nano-metal particles is greater than or equal to 1 micrometer.

[0030] Optionally, the first doped semiconductor layer has a bonding platform; the light-emitting device further includes: a passivation layer covering the bonding platform and the metal layer, and a first connection electrode and a second connection electrode located on the side of the passivation layer opposite to the substrate;

[0031] The first connecting electrode is electrically connected to the overlapping platform through a via penetrating the passivation layer;

[0032] The second connection electrode is electrically connected to the metal layer through a via penetrating the passivation layer.

[0033] Secondly, embodiments of this disclosure provide a display device, which includes a plurality of light-emitting devices as described above.

[0034] Thirdly, embodiments of this disclosure provide a method for fabricating a light-emitting device, wherein the method for fabricating the light-emitting device includes:

[0035] Forming light-emitting diodes on a substrate;

[0036] Multiple grooves are formed on the surface of the light-emitting diode that is away from the substrate;

[0037] Nano-metal particles are filled into the multiple grooves;

[0038] A color conversion layer is formed on the side of the light-emitting diode that is away from the substrate.

[0039] Optionally, a color conversion layer is formed on the side of the light-emitting diode facing away from the substrate, and then the process further includes:

[0040] A metal layer is formed on the side of the color conversion layer opposite to the substrate.

[0041] Optionally, a light-emitting diode is formed on the substrate, including:

[0042] A first doped semiconductor layer, a quantum well layer, and a second doped semiconductor layer are sequentially formed on the substrate.

[0043] Optionally, filling the plurality of grooves with nano-metal particles includes:

[0044] A silicon oxide layer is formed on the side of the second doped semiconductor layer opposite to the substrate;

[0045] A patterned photoresist layer is formed on the side of the silicon oxide layer opposite to the substrate;

[0046] Using the photoresist layer as a mask, the silicon oxide layer and the second doped semiconductor layer are etched, and multiple grooves are formed on the surface of the second doped semiconductor layer away from the substrate.

[0047] A nano-metal particle layer is formed on the silicon oxide layer, and the nano-metal particle layer is annealed to form nano-metal particles, such that the nano-metal particles fill the plurality of grooves.

[0048] The silicon oxide layer is peeled off using an acid solution, so that the excess nano-metal particles are removed along with the peeling off of the silicon oxide layer.

[0049] Optionally, a first doped semiconductor layer, a quantum well layer, and a second doped semiconductor layer are sequentially formed on the substrate, and the substrate further includes:

[0050] A current spreading layer is formed on the side of the second doped semiconductor layer away from the substrate.

[0051] Optionally, a color conversion layer is formed on the side of the light-emitting diode facing away from the substrate, comprising:

[0052] A transparent conductive layer is spin-coated on the side of the current spreading layer away from the substrate, and the surface of the transparent conductive layer away from the substrate is in the form of lines or grids.

[0053] A quantum dot material layer is formed by spin coating on the side of the transparent conductive layer opposite to the substrate.

[0054] Optionally, a color conversion layer is formed on the side of the light-emitting diode facing away from the substrate, comprising:

[0055] A mixture is formed by mixing a transparent conductive material with a quantum dot material, and a color conversion layer is formed by spin-coating the current spreading layer on the side opposite to the substrate.

[0056] Optionally, the transparent conductive material is mixed with the quantum dot material to form a mixture, which then further includes:

[0057] The mixture is subjected to ultrasonic treatment to disperse the transparent conductive material and the quantum dot material.

[0058] Optionally, a current spreading layer is formed on the side of the second doped semiconductor layer opposite to the substrate, and then the process further includes:

[0059] The current spreading layer is subjected to reduction etching using a zinc powder-ethanol solution, forming multiple pores on the surface of the current spreading layer opposite to the substrate.

[0060] Optionally, a current spreading layer is formed on the side of the second doped semiconductor layer opposite to the substrate, and then the process further includes:

[0061] A patterned photoresist layer is formed by imprinting photoresist using a nanoimprint template.

[0062] Using the photoresist layer as a mask, the current spreading layer is etched, and multiple pores are formed on the surface of the current spreading layer away from the substrate.

[0063] Optionally, a color conversion layer is formed on the side of the light-emitting diode facing away from the substrate, comprising:

[0064] The surface of the current spreading layer facing away from the substrate is treated to change the potential of its surface;

[0065] The quantum dot material solution is treated such that the potential of the quantum dot material is opposite to the potential of the surface of the current spreading layer on the side opposite to the substrate;

[0066] The quantum dot solution is spin-coated onto the surface of the current spreading layer opposite to the substrate, so that the quantum dot material fills the pores. Attached Figure Description

[0067] Figure 1 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of the present disclosure.

[0068] Figure 2 This is a schematic diagram of the arrangement of grooves and nano-metal particles in a light-emitting device according to an embodiment of the present disclosure.

[0069] Figure 3 This is a topographic image of the surface of a transparent conductive layer in a light-emitting device provided in an embodiment of this disclosure.

[0070] Figure 4 This is a schematic diagram of another light-emitting device provided in an embodiment of the present disclosure.

[0071] Figure 5 This is a schematic diagram of the structure of another light-emitting device provided in an embodiment of the present disclosure.

[0072] Figure 6 This is a schematic flowchart illustrating a method for fabricating a light-emitting device according to an embodiment of the present disclosure.

[0073] Figures 7a to 7y This is a schematic diagram of the intermediate structure corresponding to each step in the fabrication method of the light-emitting device provided in the embodiments of this disclosure. Detailed Implementation

[0074] To enable those skilled in the art to better understand the technical solutions of this disclosure, the disclosure will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0075] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an,” “a,” or “the,” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “including,” “comprising,” or “containing,” and similar terms mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. The terms “connected,” “linked,” or similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” and “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0076] In a first aspect, embodiments of this disclosure provide a light-emitting device. Figure 1 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of the present disclosure, such as... Figure 1 As shown, the light-emitting device includes: a substrate 101, a light-emitting diode 102 located on the substrate 101, and a color conversion layer 103 located on the side of the light-emitting diode 102 facing away from the substrate 101; the light-emitting device also includes: nano-metal particles 104; a plurality of grooves are formed on the surface of the light-emitting diode 102 facing away from the substrate 101; the nano-metal particles 104 are filled in the grooves.

[0077] The substrate 101 can be made of rigid materials such as glass, which can improve its load-bearing capacity for other films on it. Alternatively, the substrate 101 can be made of flexible materials such as polyimide (PI), which can improve the overall bending and tensile resistance of the light-emitting device, preventing stress generated during bending, stretching, and torsion that could cause the substrate 101 to break and result in poor circuit breakage. In practical applications, the material of the substrate 101 can be selected appropriately according to actual needs to ensure good performance of the light-emitting device. A buffer layer is generally provided between the substrate 101 and the light-emitting diode 102, and its material can be at least one of silicon nitride, silicon oxide, or silicon oxynitride.

[0078] The light emitted by the light-emitting diode 102 can be used as excitation light to illuminate the color conversion layer 103, thereby exciting the materials in the color conversion layer 103 to emit light and converting the color of the light. This allows different light-emitting devices to emit different colors, achieving multi-color display when applied to display devices. Specifically, the light emitted by the light-emitting diode 102 is generally blue. Under the illumination of blue light, the color conversion layer 103 can emit red or green light. The color of the light is determined by the material of the color conversion layer 103 and can be selected according to actual needs, which will not be elaborated further here.

[0079] The light-emitting diode 102 has multiple grooves formed on its surface away from the substrate 101. These grooves are arranged periodically, with a certain distance between adjacent grooves. Nanoscale metal particles 104 are filled into the grooves and are also arranged periodically, just like the grooves. The specific arrangement of the grooves and the nanoscale metal particles 104 can be described as follows: Figure 2 As shown, for example, the diameter of the nano-metal particles 104 can be 100 nanometers, the width of the grooves can be 750 nanometers, and the distance between adjacent grooves can be 250 nanometers, that is, the periodic spacing of the grooves is 1 micrometer. Correspondingly, the periodic spacing of the nano-metal particles 104 is also 1 micrometer. The nano-metal particles 104 can be made of materials with good electrical conductivity, such as at least one of silver, gold, platinum, palladium, and iridium. In the embodiments of this disclosure and the following description, silver will be used as an example.

[0080] In the light-emitting device provided in this embodiment, the light emitted by the light-emitting diode 102 can first irradiate the nano-metal particles 104 in the groove during the process of irradiating the color conversion layer 103. Under the irradiation of the excitation light, the nano-metal particles 104 form surface plasmons, which can be excited to generate a very strong near-field magnetic field and provide an extremely high photon state density, which can in turn enhance the self-emission radiation efficiency of the light-emitting body.

[0081] For the light-emitting diode 102, the surface plasmons formed by the nano-metal particles 104 can improve the brightness and luminous efficiency of the light-emitting diode 102. For the color conversion layer 103, the surface plasmons formed by the nano-metal particles 104 can shorten the fluorescence lifetime of the material in the color conversion layer 103 and enhance its radiative rate, thereby improving the color conversion efficiency. At the same time, the surface plasmons formed by the nano-metal particles 104 can increase the light scattering rate, which is beneficial for light extraction, thereby improving the luminous efficiency of the color conversion layer 103.

[0082] In addition, the nano-metal particles 104 are filled in the periodically arranged grooves, which can ensure the effective range of the surface plasmons formed by the nano-metal particles 104 in the grooves, while avoiding the interaction between the surface plasmons formed by the nano-metal particles 104 in adjacent grooves, which would affect the light-emitting performance of the light-emitting device.

[0083] In some embodiments, the light-emitting device further includes a metal layer 105; the metal layer 105 is located on the side of the color conversion layer 103 opposite to the substrate 101.

[0084] The metal layer 105 can be made of a material with good conductivity, such as at least one of silver, gold, platinum, palladium, and iridium. Preferably, the metal layer 105 and the nano-metal particles 104 are made of the same material. In the embodiments of this disclosure and the following description, silver will be used as an example.

[0085] The metal layer 105 and the periodically arranged nano-metal particles 104 can form a surface plasmon gap mode. Under the surface plasmon gap mode, the material in the color conversion layer 103 can be boosted by nearly 10,000 times, thereby further significantly improving the luminous efficiency of the light-emitting device. At the same time, the metal layer 105 can cover the color conversion layer 103 to protect it and prevent external forces from damaging it.

[0086] In some embodiments, the light-emitting diode 102 includes: a first doped semiconductor layer 1021 and a second doped semiconductor layer 1022 disposed opposite to each other, and a quantum well layer 1023 located between the first doped semiconductor layer 1021 and the second doped semiconductor layer 1022; a groove is formed on the surface of the second doped semiconductor layer 1022 away from the substrate 101.

[0087] The first doped semiconductor layer 1021 and the second doped semiconductor layer 1022 are made of different types of semiconductor materials. Specifically, the first doped semiconductor layer 1021 can be an N-type doped semiconductor layer, and the second doped semiconductor layer 1022 can be a P-type doped semiconductor layer. For example, the material of the first doped semiconductor layer 1021 can be N-GaN, and the material of the second doped semiconductor layer 1022 can be P-GaN. Under the action of an electric field, the first doped semiconductor layer 1021 and the second doped semiconductor layer 1022 can form photons in the quantum well layer 1023 and radiate the photons to achieve the function of light emission. The groove for accommodating the nano-metal particles 104 is formed on the surface of the second doped semiconductor layer 1022 facing away from the substrate 101. This eliminates the need to set a separate film layer for the nano-metal particles 104, thereby reducing the number of film layers in the light-emitting device and thus reducing the thickness of the light-emitting device.

[0088] In some embodiments, such as Figure 1 and Figure 2 As shown, the depth of the groove is less than the thickness of the second doped semiconductor layer 1022.

[0089] In practical applications, the depth of the groove can be less than the thickness of the second doped semiconductor layer 1022. This avoids etching through the second doped semiconductor layer 1022 during the groove etching process, thus ensuring the facing area between the second doped semiconductor layer 1022 and the first doped semiconductor layer 1021, thereby avoiding the impact of the groove on the luminous efficiency of the light-emitting diode 102.

[0090] In some embodiments, such as Figure 1 As shown, the light-emitting diode 102 further includes a current spreading layer 1024; the current spreading layer 1024 is located on the side of the second doped semiconductor layer 1022 away from the substrate 101.

[0091] The current spreading layer 1024 can serve to conduct electricity and spread current. Specifically, the material of the current spreading layer 1024 can be indium tin oxide (ITO), which has good conductivity and is a transparent structure, which can avoid blocking the light generated by the quantum well layer 1023.

[0092] In some embodiments, such as Figure 1 As shown, the color conversion layer 103 includes: a transparent conductive material layer 1031 and a quantum dot material layer 1032; the transparent conductive material layer 1031 is located on the side of the current spreading layer 1024 away from the substrate 101, and the surface of the transparent conductive material layer 1031 away from the substrate 101 is linear or grid-like; the quantum dot material layer 1032 is located on the side of the transparent conductive layer 1031 away from the substrate 101.

[0093] In the color conversion layer 103, there is at least one transparent conductive layer 1031 and one quantum dot material layer 1032, which are alternately arranged. The surface of the transparent conductive layer 1031 facing away from the substrate 101 is linear or grid-like, and its morphology is shown in the figure below. Figure 3 As shown, the uneven surface of the transparent conductive layer 1031 facing away from the substrate can provide a carrying space for the quantum dot material 1030 in the quantum dot material layer 1032, so that the quantum dot material 1030 can fill the formed linear or grid-like space, avoiding the aggregation of the quantum dot material 1030 and thus avoiding affecting the color conversion efficiency and improving the luminous efficiency of the light-emitting device.

[0094] In some embodiments, Figure 4 This is a schematic diagram of another light-emitting device provided in an embodiment of the present disclosure, as shown below. Figure 4 As shown, the color conversion layer 103 in the light-emitting device comprises a mixture of a transparent conductive material and a quantum dot material 1030.

[0095] Figure 4 The light-emitting device shown is Figure 1 The difference in the light-emitting device shown is that, Figure 4 The color conversion layer 103 in the illustrated light-emitting device is a single-layer structure, composed of a mixture of a transparent conductive material and quantum dot material 1030. Because the transparent conductive material is mixed within the quantum dot material 1030, it disperses the quantum dot material 1030, preventing agglomeration and quenching, thus avoiding impact on color conversion efficiency and improving the luminous efficiency of the light-emitting device. Furthermore, since the color conversion layer 103 is a single-layer structure, the fabrication process only requires pre-mixing the transparent conductive material and quantum dot material 1030 to form a mixture, followed by spin-coating to form the color conversion layer 103. This avoids multiple spin-coating steps, reducing process steps and saving fabrication costs. Additionally, the single-layer structure of the color conversion layer 103 allows for a smaller thickness, reducing the overall thickness of the light-emitting device and contributing to the thinner and lighter design of the light-emitting device and display device.

[0096] In some embodiments, the transparent conductive material includes at least one of graphene, carbon nanotubes, and nano-metal particles.

[0097] Transparent conductive materials can specifically be at least one of graphene, carbon nanotubes, and nano-metal particles. They not only possess excellent conductivity but also prevent the aggregation and quenching of quantum dot materials (1030), thus avoiding impact on color conversion efficiency and improving the luminous efficiency of light-emitting devices. Since the preparation process of graphene materials is relatively complex during film formation, carbon nanotubes and nano-silver particles are preferred transparent conductive materials.

[0098] In some embodiments, Figure 5 This is a schematic diagram of the structure of another light-emitting device provided in an embodiment of the present disclosure, as shown below. Figure 5 As shown, the color conversion layer 103 includes: quantum dot material 1030; a current spreading layer 1024 has multiple pores formed on the surface of the side opposite to the substrate 101; and the quantum dot material 1030 fills the pores.

[0099] The quantum dot material 1030 can convert light into different colors under the illumination of excitation light. Specifically, the quantum dot material 1030 can be a perovskite or similar material. The quantum dot material 1030 can fill multiple pores on the surface of the current spreading layer 1024 facing away from the substrate 101, thus eliminating the need for a separate film layer for the quantum dot material 1030, reducing the number of film layers in the light-emitting device, and thereby reducing the thickness of the light-emitting device.

[0100] In practical applications, the thickness of the current spreading layer 1024 is 10 nanometers to 100 nanometers, which can ensure that the distance between the nano-metal particles 104 and the metal layer 105 is maintained at 10 nanometers to 100 nanometers. This can ensure that the nano-metal particles 104 and the metal layer 105 can form a surface plasmon gap mode, and at the same time, it can prevent the quantum dot fluorescence from being quenched due to the distance between the nano-metal particles 104 and the quantum dot material 1030 in the color conversion layer 103 being too close, so as to ensure the color conversion efficiency and luminescence efficiency of the color conversion layer 103.

[0101] In some embodiments, the surface of the plurality of pores has the opposite charge potential to the surface of the quantum dot material 1030.

[0102] The surface of quantum dot materials is generally negatively charged. The current spreading layer 1024 is soaked in polyethylene glycol (PEG) or sodium polystyrene sulfonate (PSS) solution to make the surface of the pores carry a certain positive charge. In this way, the quantum dot material 1030 can be filled into the pores by electrostatic adsorption, so as to ensure the thickness of the formed color conversion layer 103 and improve the color conversion efficiency and luminous efficiency of the color conversion layer 103.

[0103] In some embodiments, the diameter of the pores is 10 nanometers to 100 nanometers.

[0104] The diameter of the pores can range from 10 nanometers to 100 nanometers. The quantum dot material 1030 can fill the nanometer-scale pores, ensuring that the quantum dot material 1030 aggregates at the nanometer level and reducing quenching caused by aggregation. At the same time, the depth of the pores is generally less than the thickness of the current spreading layer 1024 to avoid etching through the current spreading layer 1024 and affecting the light-emitting performance of the light-emitting device.

[0105] In some embodiments, the nano-metal particles 104 are made of the same material as the metal layer 105.

[0106] The nano-metal particles 104 and the metal layer 105 can both be made of materials with good electrical conductivity, and the materials of the two can be the same. On the one hand, this can facilitate the generation of surface plasmons, and on the other hand, it can reduce the difficulty of preparation and save on preparation costs.

[0107] In some embodiments, such as Figure 1 , Figure 4 and Figure 5As shown, the first doped semiconductor layer 1021 has a bonding platform 1021a; the light-emitting device further includes: a passivation layer 106 covering the bonding platform 1021a and the metal layer 105, and a first connection electrode 107 and a second connection electrode 108 located on the side of the passivation layer 106 away from the substrate 101; the first connection electrode 107 is electrically connected to the bonding platform 1021a through a via penetrating the passivation layer 106; the second connection electrode 108 is electrically connected to the metal layer 105 through a via penetrating the passivation layer 106.

[0108] The first electrode 107 and the second connecting electrode 108 can be input with different voltage signals. Under the drive of the voltage signal, an electric field can be formed between the first doped semiconductor layer 1021 and the second doped semiconductor layer 1022, so that photons are generated in the quantum well layer 1023 and radiated to achieve the function of light emission.

[0109] Secondly, this disclosure provides a display device, which includes a plurality of light-emitting devices as provided in any of the above embodiments. Specifically, the display device can be any product or component with display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator. Its implementation principle and beneficial effects are the same as those of the light-emitting devices described above, and will not be repeated here.

[0110] Thirdly, embodiments of this disclosure provide a method for fabricating a light-emitting device. Figure 6 This is a schematic flowchart illustrating a method for fabricating a light-emitting device according to an embodiment of the present disclosure. Figures 7a to 7y The accompanying drawings are schematic diagrams of the intermediate structures corresponding to each step in the fabrication method of the light-emitting device provided in the embodiments of this disclosure. The fabrication method of the light-emitting device provided in the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0111] like Figure 6 As shown, the method for preparing the light-emitting device provided in this embodiment is as follows: steps S601 to S603.

[0112] S601 forms a light-emitting diode on a substrate.

[0113] Specifically, such as Figure 7a As shown, the steps for forming a light-emitting diode 102 on the substrate 101 can be specifically as follows: forming a buffer layer on the substrate 101, followed by sequentially forming a first doped semiconductor layer 021, a quantum well layer 1023, and a second doped semiconductor layer 1022 on the buffer layer. In practical applications, the buffer layer only serves a buffering function and has no impact on the overall light-emitting effect of the light-emitting device. Therefore, it can be determined whether or not to set a buffer layer as needed.

[0114] S602 forms multiple grooves on the surface of the light-emitting diode away from the substrate.

[0115] Specifically, such as Figures 7b to 7d As shown, firstly, a 120 nm thick silicon oxide (SiO2) layer is deposited on the epitaxial wafer of the LED 102, on the surface opposite to the substrate 101, i.e., on the surface of the second semiconductor doped layer 1022. For the groove template, at this point, only a single layer of nanoimprint stencil needs to be spin-coated onto the silicon oxide (SiO2) layer. Then, using a circular hole-shaped nanoimprint stencil, a two-step method is used to imprint the substrate with the spin-coated imprint stencil onto the imprint stencil using IPS, so that the circular hole pattern is transferred onto the imprint stencil. Then, oxygen plasma is used to remove residual stencil, thus forming the hole pattern of the imprint stencil on the epitaxial wafer of the LED 102. Using the stencil as a mask, inductively coupled plasma (ICP) is used to etch the silicon oxide (SiO2) layer in an atmosphere of carbon tetrafluoride (CF4) or trifluoromethane (CHF3), and the etching extends to the second semiconductor doped layer 1022 (P-type GaN). Then, the second semiconductor doped layer 1022 is etched under a chlorine (Cl2) / boron trichloride (BCl3) atmosphere, and the etching time is determined according to the required etching depth. At this point, a groove structure with a silicon oxide (SiO2) layer as a mask is obtained on the epitaxial wafer of the light-emitting diode 102.

[0116] S603, which fills multiple grooves with nano-metal particles.

[0117] Specifically, such as Figures 7e to 7f As shown, a metal layer, which can be silver (Ag) and has a deposition thickness of 30 nanometers, is deposited on the groove structure, followed by annealing in a 600°C furnace for 10 minutes. Nanoscale metal particles 104 are formed on both the groove and the silicon oxide (SiO2) mask layer. The sample is then immersed in a hydrofluoric acid (HF) solution and ultrasonically cleaned with the front side (second doped semiconductor layer 1022) facing down. During this process, the nanoscale metal particles 104 that fall onto the silicon oxide (SiO2) mask layer dissolve in the hydrofluoric acid (HF) solution and fall off the epitaxial wafer. At this point, the desired array of nanoscale metal particles 104 is formed in the groove.

[0118] S604 forms a color conversion layer on the side of the light-emitting diode away from the substrate.

[0119] In the first possible implementation, such as Figures 7g to 7iAs shown, a current spreading layer 1024 can be formed on the second doped semiconductor layer 1022, specifically indium tin oxide (ITO). A transparent conductive material, specifically at least one of graphene, carbon nanotubes, and silver nanoparticles, is spin-coated onto the current spreading layer 1024 to form a transparent conductive material layer 1031. Due to the characteristics of the transparent conductive material, the surface of the formed transparent conductive material layer 1031 facing away from the substrate 101 is uneven, generally exhibiting a linear or mesh-like pattern. Then, a quantum dot material 1030, specifically perovskite material, is spin-coated onto the transparent conductive material layer 1031 to form a quantum dot material layer 1032. The transparent conductive layer 1031, with its surface facing away from the substrate 101 in a linear or grid-like pattern, provides a carrying space for the quantum dot material 1030 in the quantum dot material layer 1032. This allows the quantum dot material 1030 to fill the formed linear or grid-like spaces, preventing the quantum dot material 1030 from agglomerating and quenching, thus avoiding any impact on color conversion efficiency and improving the luminous efficiency of the light-emitting device. In practical applications, due to the presence of grooves, the surface of the current spreading layer 1024 facing away from the substrate 101 can also be uneven, which is beneficial for increasing the light output of the light-emitting diode and enhancing the excitation effect on the quantum dot material 1030, thereby further improving the luminous efficiency.

[0120] In the second possible implementation, such as Figure 7g and Figure 7j As shown, a current spreading layer 1024 can be formed on the second doped semiconductor layer 1022, specifically indium tin oxide (ITO). A transparent conductive material is mixed with quantum dot material 1030 to form a mixture, which is then spin-coated to form a color conversion layer 103. Because the transparent conductive material is mixed within the quantum dot material 1030, the quantum dot material 1030 is dispersed, preventing agglomeration and quenching, thus avoiding impact on color conversion efficiency and improving the luminous efficiency of the light-emitting device. Furthermore, since the color conversion layer 103 is a single-layer structure, the fabrication process only requires pre-mixing the transparent conductive material and quantum dot material 1030 to form a mixture, followed by spin-coating to form the color conversion layer 103, avoiding multiple spin-coating steps, thereby reducing process steps and saving fabrication costs. In the second possible implementation, before forming the color conversion layer 103 composed of the mixture, the mixture can be ultrasonically treated to disperse the transparent conductive material and the quantum dot material 1030. This can further prevent the quantum dot material 1030 from agglomerating and causing quenching, thereby avoiding affecting the color conversion efficiency and improving the luminous efficiency of the light-emitting device.

[0121] In the third possible implementation, such as Figure 7g , Figures 7k to 7mAs shown, a current spreading layer 1024 can be formed on the second doped semiconductor layer 1022, specifically indium tin oxide (ITO). A zinc powder-ethanol solution is spin-coated onto the current spreading layer 1024. The diameter of the nanopores is closely related to the zinc powder concentration; to form pores of approximately 100 nanometers, the zinc powder concentration is approximately 60 mg / ml. (30 μL / cm³ solution is used.) 2 The zinc powder is applied to the current spreading layer 1024 at a spin coating speed of 500-6000 rad / min for 30 seconds (the spin coating speed affects the spreading of the zinc powder, further affecting the pore diameter). The conductive glass is then immersed in an acid-ethanol mixture to induce a reduction corrosion reaction in the current spreading layer 1024. The concentration of the hydrochloric acid-ethanol solution affects the reaction rate; the hydrochloric acid concentration should be between 0.01-1 mol / L, and the volume ratio of ethanol to water in the hydrochloric acid should be between 1-8. A ratio less than 1 results in an uncontrollable, excessively fast reaction, while a ratio greater than 8 results in a very slow reaction. The corrosion reaction is allowed to proceed for a certain time. After the reaction, the glass is rinsed three times with deionized water and dried at 50°C to form pores in the current spreading layer 1024.

[0122] Of course, other methods can also be used to create the aforementioned pores, such as... Figure 7g , Figures 7n to 7q As shown, a current spreading layer 1024, specifically indium tin oxide (ITO), can be formed on the second doped semiconductor layer 1022. A single layer of nanoimprint stencil is spin-coated onto the current spreading layer 1024. Using a circular aperture AAO imprint template (100 nm period), a two-step IPS process is used to imprint the substrate with the spin-coated imprint stencil, transferring the circular aperture pattern onto the imprint stencil. Then, oxygen plasma is used to remove residual stencil, thus forming a pore pattern of the imprint stencil in the current spreading layer 1024. Using the imprint stencil as a mask, the current spreading layer 1024 is etched to form the pores within it.

[0123] like Figure 7r As shown, the etched current spreading layer 1024 undergoes surface treatment to alter its surface zeta potential, allowing quantum dot materials to be spin-coated into the pores via electrostatic adsorption. Surface modification is performed based on the zeta potential of the quantum dot material surface, which is generally negatively charged. The current spreading layer 1024 is immersed in PEG or PSS solutions to impart a certain positive charge to its surface. To prevent QD aggregation, volatile solvents such as toluene or n-octane are selected as the raw material solvent for the quantum dot material, allowing for natural evaporation at room temperature and minimizing agglomeration caused by heating steps.

[0124] like Figure 6 As shown, the method for fabricating the light-emitting device further includes step S605 after step S604, in which a metal layer is formed on the side of the color conversion layer away from the substrate.

[0125] Specifically, such as Figure 7sAs shown, a metal layer 105 is deposited on the color conversion layer 103. The material can be silver (Ag) and the thickness is about 100 nm.

[0126] In some embodiments, after forming the light-emitting device, it is also necessary to fabricate a first connecting electrode and a second connecting electrode, specifically as follows: Figures 7t to 7y As shown, the metal layer 105 is removed by wet etching using a silver etchant. The current spreading layer 104 can be etched using an electrochemical method, and the quantum dot material 1030 therein will be stripped off during the etching of the current spreading layer 104. Subsequently, the second doped semiconductor layer 1022 and the quantum well layer 1023 are removed using conventional processes. For the first doped semiconductor layer 1021, it is first protected with photoresist, and then the bonding platform is etched. Excess photoresist is removed by ultrasonic cleaning with acetone, ethanol, and water. The first connecting electrode 107 is deposited by thermal evaporation or E-beam electron beam evaporation. The electrode metal is Au or a Ti / Al / Ni / Au alloy, and the evaporation metal and annealing temperature are selected to be below 300°C. A passivation layer 106 is formed by plasma-enhanced chemical vapor deposition of silicon oxide. The passivation layer 106 is about 300 nanometers thick, forming a protective package for the entire device. The pattern is etched to create the pattern. The first connecting electrode 107 is thickened, and the second connecting electrode 108 is formed simultaneously. The electrodes are deposited using E-beam electron beam evaporation, with the metal being Ti / Al / Ni / Au with thicknesses of 30 / 175 / 35 / 1000 nm or Cr / Pt / Au = 20 / 20 / 1000 nm, and annealed at 250°C for 10 minutes. Afterwards, they are diced to the required chip size.

[0127] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of this disclosure, and this disclosure is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this disclosure, and these modifications and improvements are also considered to be within the scope of protection of this disclosure.

Claims

1. A light-emitting device, wherein, The light-emitting device includes: a substrate, a light-emitting diode located on the substrate, and a color conversion layer located on the side of the light-emitting diode facing away from the substrate; the light-emitting device further includes: nano-metal particles; The surface of the light-emitting diode facing away from the substrate has multiple grooves; The nano-metal particles fill the groove; The light-emitting device further includes: a metal layer; The metal layer is located on the side of the color conversion layer opposite to the substrate.

2. The light-emitting device according to claim 1, wherein, The light-emitting diode includes: a first doped semiconductor layer and a second doped semiconductor layer disposed opposite to each other, and a quantum well layer located between the first doped semiconductor layer and the second doped semiconductor layer; The groove is formed on the surface of the second doped semiconductor layer opposite to the substrate.

3. The light-emitting device according to claim 2, wherein, The depth of the groove is less than the thickness of the second doped semiconductor layer.

4. The light-emitting device according to claim 2, wherein, The light-emitting diode further includes: a current spreading layer; The current spreading layer is located on the side of the second doped semiconductor layer away from the substrate.

5. The light-emitting device according to claim 4, wherein, The color conversion layer comprises: a transparent conductive material layer and a quantum dot material layer; The transparent conductive material layer is located on the side of the current spreading layer away from the substrate, and the surface of the transparent conductive material layer away from the substrate is linear or grid-like. The quantum dot material layer is located on the side of the transparent conductive material layer that is away from the substrate.

6. The light-emitting device according to claim 4, wherein, The color conversion layer comprises a mixture of transparent conductive material and quantum dot material.

7. The light-emitting device according to claim 5 or 6, wherein, The transparent conductive material includes at least one of graphene, carbon nanotubes, and nano-metal particles.

8. The light-emitting device according to claim 4, wherein, The color conversion layer comprises: quantum dot material; The surface of the current spreading layer opposite to the substrate has multiple pores; The quantum dot material fills the pores.

9. The light-emitting device according to claim 8, wherein, The surface of the plurality of pores has an opposite charge potential to the surface of the quantum dot material.

10. The light-emitting device according to claim 8, wherein, The thickness of the current spreading layer is 10 nanometers to 100 nanometers.

11. The light-emitting device according to claim 10, wherein, The diameter of the pores is 10 nanometers to 100 nanometers.

12. The light-emitting device according to claim 1, wherein, The nano-metal particles are made of the same material as the metal layer.

13. The light-emitting device according to claim 12, wherein, The materials of the nano-metal particles include at least one of silver, gold, platinum, palladium, and iridium.

14. The light-emitting device according to claim 1, wherein, The diameter of the nano-metal particles is less than or equal to 100 nanometers; The spacing between adjacent nano-metal particles is greater than or equal to 1 micrometer.

15. The light-emitting device according to claim 2, wherein, The first doped semiconductor layer has a bonding platform; the light-emitting device further includes: a passivation layer covering the bonding platform and the metal layer, and a first connection electrode and a second connection electrode located on the side of the passivation layer away from the substrate; The first connecting electrode is electrically connected to the overlapping platform through a via penetrating the passivation layer; The second connection electrode is electrically connected to the metal layer through a via penetrating the passivation layer.

16. A display device, wherein, It includes a plurality of light-emitting devices as described in any one of claims 1 to 15.

17. A method for fabricating a light-emitting device, wherein, The method for fabricating the light-emitting device includes: Forming light-emitting diodes on a substrate; Multiple grooves are formed on the surface of the light-emitting diode that is away from the substrate; Nano-metal particles are filled into the multiple grooves; A color conversion layer is formed on the side of the light-emitting diode that is away from the substrate; A metal layer is formed on the side of the color conversion layer opposite to the substrate.

18. The method for fabricating a light-emitting device according to claim 17, wherein, Forming a light-emitting diode on a substrate includes: A first doped semiconductor layer, a quantum well layer, and a second doped semiconductor layer are sequentially formed on the substrate.

19. The method for fabricating a light-emitting device according to claim 18, wherein, The process of filling the multiple grooves with nano-metal particles includes: A silicon oxide layer is formed on the side of the second doped semiconductor layer opposite to the substrate; A patterned photoresist layer is formed on the side of the silicon oxide layer opposite to the substrate; Using the photoresist layer as a mask, the silicon oxide layer and the second doped semiconductor layer are etched, and multiple grooves are formed on the surface of the second doped semiconductor layer away from the substrate. A nano-metal particle layer is formed on the silicon oxide layer, and the nano-metal particle layer is annealed to form nano-metal particles, such that the nano-metal particles fill the plurality of grooves. The silicon oxide layer is peeled off using an acid solution, so that the excess nano-metal particles are removed along with the peeling off of the silicon oxide layer.

20. The method for fabricating a light-emitting device according to claim 18, wherein, A first doped semiconductor layer, a quantum well layer, and a second doped semiconductor layer are sequentially formed on the substrate, and the substrate further includes: A current spreading layer is formed on the side of the second doped semiconductor layer away from the substrate.

21. The method for fabricating a light-emitting device according to claim 20, wherein, A color conversion layer is formed on the side of the light-emitting diode facing away from the substrate, comprising: A transparent conductive material layer is spin-coated on the side of the current spreading layer away from the substrate, and the surface of the transparent conductive material layer away from the substrate is in the form of lines or grids. A quantum dot material layer is formed by spin coating on the side of the transparent conductive material layer away from the substrate.

22. The method for fabricating a light-emitting device according to claim 20, wherein, A color conversion layer is formed on the side of the light-emitting diode facing away from the substrate, comprising: A mixture is formed by mixing a transparent conductive material with a quantum dot material, and a color conversion layer is formed by spin-coating the current spreading layer on the side opposite to the substrate.

23. The method for fabricating a light-emitting device according to claim 22, wherein, The mixture is formed by mixing transparent conductive materials with quantum dot materials, and then includes: The mixture is subjected to ultrasonic treatment to disperse the transparent conductive material and the quantum dot material.

24. The method for fabricating a light-emitting device according to claim 20, wherein, A current spreading layer is formed on the side of the second doped semiconductor layer away from the substrate, followed by: The current spreading layer is subjected to reduction etching using a zinc powder-ethanol solution, forming multiple pores on the surface of the current spreading layer opposite to the substrate.

25. The method for fabricating a light-emitting device according to claim 20, wherein, A current spreading layer is formed on the side of the second doped semiconductor layer away from the substrate, followed by: A patterned photoresist layer is formed by imprinting photoresist using a nanoimprint template. Using the photoresist layer as a mask, the current spreading layer is etched, and multiple pores are formed on the surface of the current spreading layer away from the substrate.

26. The method for fabricating a light-emitting device according to claim 24 or 25, wherein, A color conversion layer is formed on the side of the light-emitting diode facing away from the substrate, comprising: The surface of the current spreading layer facing away from the substrate is treated to change the potential of its surface; The quantum dot material solution is treated such that the potential of the quantum dot material is opposite to the potential of the surface of the current spreading layer on the side opposite to the substrate; The quantum dot material solution is spin-coated onto the surface of the current spreading layer opposite to the substrate, so that the quantum dot material fills the pores.

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